JP2006024745A - Led light source - Google Patents

Led light source Download PDF

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Publication number
JP2006024745A
JP2006024745A JP2004201504A JP2004201504A JP2006024745A JP 2006024745 A JP2006024745 A JP 2006024745A JP 2004201504 A JP2004201504 A JP 2004201504A JP 2004201504 A JP2004201504 A JP 2004201504A JP 2006024745 A JP2006024745 A JP 2006024745A
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JP
Japan
Prior art keywords
phosphor
light source
led
led light
phosphor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004201504A
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Japanese (ja)
Inventor
Masanori Shimizu
Kiyoshi Takahashi
Tadashi Yano
正則 清水
正 矢野
高橋  清
Original Assignee
Matsushita Electric Ind Co Ltd
松下電器産業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd, 松下電器産業株式会社 filed Critical Matsushita Electric Ind Co Ltd
Priority to JP2004201504A priority Critical patent/JP2006024745A/en
Publication of JP2006024745A publication Critical patent/JP2006024745A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED light source of high efficiency with improved unevenness in color. <P>SOLUTION: An LED201 has a phosphor layer 202 containing phosphor formed around an LED. At least a part of the emission from the LED201 is wavelength-converted and radiated by the phosphor in the phosphor layer. A phosphor layer thickness 202 is 10-1000 μm and the phosphor layer contains fine particles by 25-50 wt.%, for the LED light source of improved efficiency and unevenness in color. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an LED light source with high efficiency and little color unevenness.

  As a conventional LED light source, in a fluorescent agent-containing LED lamp in which a fluorescent agent is mixed in a resin case, there is one in which 5 to 20 wt% of a diffusing agent is mixed with the fluorescent agent in the resin case (for example, Patent Document 1). Here, the diffusing agent is a white fine powder (particle size≈1.6 μm) such as white and opaque magnesium oxide, and diffusely reflects light entering the resin case such as light from the LED chip and sunlight. And diffused light.

  FIG. 5 shows a conventional LED light source described in Patent Document 1. In FIG.

In FIG. 5, 1 is an LED lamp containing a fluorescent agent, 2 is a lead frame, 3 is an LED chip, 4 is a fluorescent agent, 5 is a resin, and 6 is a diffusing agent.
Japanese Patent No. 3065554 (see claim 1, paragraph number 0008)

  However, the configuration of FIG. 5 has a problem that the color unevenness of the lit light is large.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide an LED light source that is highly efficient and has improved color unevenness.

  In order to solve the above-described conventional problems, an LED light source according to the present invention is an LED in which a phosphor layer including a phosphor is formed on the periphery of the LED, and at least a part of light emitted from the LED is the phosphor. The LED light source is wavelength-converted and emitted by the phosphor in the layer, the phosphor layer having a thickness of 10 to 1000 μm, and 25 to 50 wt% of fine particles are provided in the phosphor layer.

  In a preferred embodiment, the fine particles are silica fine particles.

  As described above, the present invention is an LED in which a phosphor layer containing a phosphor is formed on the periphery of the LED, and at least a part of the emitted light from the LED is wavelength-converted by the phosphor in the phosphor layer. An LED light source to be radiated, and having a phosphor layer thickness of 10 to 1000 μm and having 25 to 50 wt% of fine particles in the phosphor layer, to obtain an LED light source with high efficiency and improved color unevenness Can do.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic view of an LED light source 101 of the present invention. It has a package structure in which LEDs are mounted on a substrate 102, and emits light in the direction of an arrow in the figure.

  Next, a cross-sectional view of the LED light source 101 is shown in FIG. A blue LED chip 201 (with a light emission center wavelength of about 420 to 480 nm, which is 470 nm in this embodiment) is mounted on the substrate 102 by a flip chip. Although not shown, a wiring pattern is formed on the substrate 102. The electrode 205 and the LED chip 201 are electrically connected, and the power input to the electrode can be supplied to the LED. The LED chip has a side of about 0.3 to 5 mm, and in this embodiment, the LED chip is 1 mm. The substrate 102 is a substrate whose main material is a material having high thermal conductivity such as copper or aluminum. A phosphor resin 202 is formed around the LED chip 201. The phosphor resin 202 covers the surface of the LED chip and has a thickness of 10 to 1000 μm (in this embodiment, a 100 to 200 μm one is used depending on the location).

The phosphor resin 202 is obtained by mixing and solidifying a silicone resin, a phosphor, and silica particles. The refractive index of the silicone resin is about 1.4. The phosphor absorbs blue light, which is radiation from the LED, and emits yellow light having a peak in the vicinity of 540 to 600 nm. The phosphor emits white light by mixing the blue light and yellow light. Is. Specifically, (Y · Sm) 3 (Al · Ga) 5 O 12 : Ce, (Y 0.39 Gd 0.57 Ce 0.03 Sm 0.01 ) 3 Al 5 O 12, or the like is used. it can. Silica fine particles are fine particles having a diameter of about 2 to 50 μm, and those having a diameter of about 10 μm are used in this embodiment. By selecting a material within this range, the dispersed state of the phosphor in the resin becomes appropriate, and a highly efficient light source with little color unevenness can be obtained. These three types are mixed at a ratio of 50 wt% silicone resin, 10 wt% phosphor, and 40 wt% silica fine particles. Next, 203 is a reflecting plate, which is formed of aluminum or silver plating having a high reflectivity (this embodiment uses a reflecting plate made of aluminum). Reference numeral 204 denotes a translucent resin, and a silicone resin (refractive index of 1.4) is used in this embodiment. Further, as shown in the figure, the phosphor layer 202 is not in contact with the reflector.

(Conventional configuration)
On the other hand, as an example of a conventional LED light source, a sample which differs only in the amount and type of fine particles in the phosphor resin was produced and compared. The only difference is that 1.6 μm-diameter magnesium oxide fine powder is used instead of silica fine powder, and the mixing ratio is 75 wt% silicone resin, 10 wt% phosphor, and 15 wt% magnesium oxide.

(Comparison)
Therefore, the LED light source was turned on at a voltage of 3.6 V and a current of 400 mA, and the light output characteristics were measured. As shown in FIG. 3, the color temperature change of the LED emission color was measured 10 cm above the LED light source. The result is shown in FIG. As shown in FIG. 4, the color temperature in the central part tends to be high and the color temperature in the peripheral part tends to be low. By comparison, it can be seen that the LED light source of this embodiment can reduce color unevenness. Specifically, in the conventional LED light source, the color temperature difference is about 5800-3400 = 2400K, whereas in the LED light source of the present embodiment, the color unevenness is greatly improved to about 4800-4200 = 600K. Yes.

(Amount of fine particles)
Further, the amount of fine particles mixed in the phosphor resin is preferably 25 to 50 wt% in the phosphor resin. When the amount of fine particles is 25 wt% or less, the color unevenness increases and the color temperature difference exceeds 1000K. Here, if it exceeds 1000K, it can usually be recognized clearly, so it is necessary to make it 1000K or less. Further, when the amount of fine particles is 50 wt% or more, the luminous intensity is lowered. In addition, if it is 30-45 wt%, there is little color nonuniformity and the fall of a luminous intensity is also suppressed, and it is more preferable.

(Thickness of phosphor resin layer)
Moreover, the range which has the said effect is effective when a fluorescent substance layer thickness is 10-1000 micrometers. This is because phosphor particles are generally about several to several tens of μm, and if the particle size is 10 μm or less, the phosphor cannot be uniformly dispersed in the phosphor resin layer. On the other hand, when the thickness is 1000 μm or more, the light emitted from the LED is excessively dispersed by the fine particles, and the light absorption by the resin increases, causing a reduction in efficiency.

(Positional relationship between phosphor resin and reflector)
Further, the LED light source of the present embodiment has a narrow directivity light distribution characteristic. This is because the phosphor resin 202 is separated from the reflecting mirror 203. This is because the surface of the phosphor resin can be considered as a light source, and the size of the phosphor resin relative to the reflecting mirror can be reduced by separating the phosphor resin from the reflecting mirror. In order to obtain an LED having such narrow directivity, high luminous intensity, and suppressed color unevenness, it is preferable to separate the phosphor resin from the reflecting mirror. Also, the LED light source itself is desired to be downsized, and it is preferable to downsize peripheral members such as a phosphor layer and a reflector. Even in such applications, the phosphor layer preferably has a thickness of 10 to 1000 μm.

(Resin type)
Moreover, in this Embodiment, although the silicone resin was used for fluorescent substance resin, what is necessary is just a translucent resin. However, when using an epoxy resin, it is preferable that it is 10 wt% or less. This is because, when the concentration is 10 wt% or more, the light output from the LED light source is lowered at an early stage due to coloring deterioration of the epoxy resin during life.

(Fine particle type)
In the present embodiment, silica fine particles are used as the fine particles, but other materials may be used. For example, boron nitride or alumina fine particles may be used. However, in consideration of the following, translucent fine particles such as silica are preferable. Here, translucency refers to a light transmittance of 1% or more. This is because light loss due to irregular reflection is less in the case of translucent fine particles than in the case of non-translucent resin.

  Further, silica fine particles are more preferable from the viewpoint of photodegradation.

  The LED light source of the present invention is useful as a thin LED general lighting device and the like because an LED light source with high efficiency and improved color unevenness can be obtained.

The figure which shows the outline of the LED light source in Embodiment 1 of this invention. The figure which shows the cross section of the LED light source in Embodiment 1 of this invention. The figure which shows the measuring method of the color nonuniformity of the LED light source in Embodiment 1 of this invention. The figure which shows the measurement result of the color nonuniformity of the LED light source in Embodiment 1 of this invention. The figure which shows the outline of the conventional LED light source

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 LED light source 102 Board | substrate 201 LED chip 202 Phosphor resin layer 203 Reflector plate 204 Sealing resin 205 Electrode

Claims (2)

  1. It is a configuration in which a phosphor layer containing a phosphor is formed around the LED,
    An LED light source in which at least a part of light emitted from the LED is wavelength-converted and emitted by the phosphor in the phosphor layer,
    A phosphor layer having a phosphor layer thickness of 10 to 1000 μm and containing 25 to 50 wt% of fine particles in the phosphor layer.
  2. The LED light source according to claim 1, wherein the fine particles are silica fine particles.
JP2004201504A 2004-07-08 2004-07-08 Led light source Pending JP2006024745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004201504A JP2006024745A (en) 2004-07-08 2004-07-08 Led light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004201504A JP2006024745A (en) 2004-07-08 2004-07-08 Led light source

Publications (1)

Publication Number Publication Date
JP2006024745A true JP2006024745A (en) 2006-01-26

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Country Status (1)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227932A (en) * 2006-02-22 2007-09-06 Samsung Electro Mech Co Ltd Light emitting diode package
WO2007140651A1 (en) * 2006-06-08 2007-12-13 Hong-Yuan Technology Co., Ltd Light emitting system, light emitting apparatus and forming method thereof
JP2009102514A (en) * 2007-10-23 2009-05-14 Mitsubishi Chemicals Corp Method for producing fluorescent substance-containing composition, and method for producing semiconductor light-emitting device
WO2009105923A1 (en) * 2008-02-25 2009-09-03 鹤山丽得电子实业有限公司 A manufacturing method of led apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227932A (en) * 2006-02-22 2007-09-06 Samsung Electro Mech Co Ltd Light emitting diode package
WO2007140651A1 (en) * 2006-06-08 2007-12-13 Hong-Yuan Technology Co., Ltd Light emitting system, light emitting apparatus and forming method thereof
JP2009102514A (en) * 2007-10-23 2009-05-14 Mitsubishi Chemicals Corp Method for producing fluorescent substance-containing composition, and method for producing semiconductor light-emitting device
WO2009105923A1 (en) * 2008-02-25 2009-09-03 鹤山丽得电子实业有限公司 A manufacturing method of led apparatus

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