JP2006024615A - Led lighting source and manufacturing method thereof - Google Patents

Led lighting source and manufacturing method thereof Download PDF

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Publication number
JP2006024615A
JP2006024615A JP2004199131A JP2004199131A JP2006024615A JP 2006024615 A JP2006024615 A JP 2006024615A JP 2004199131 A JP2004199131 A JP 2004199131A JP 2004199131 A JP2004199131 A JP 2004199131A JP 2006024615 A JP2006024615 A JP 2006024615A
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Japan
Prior art keywords
resin portion
led
light source
illumination light
phosphor
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JP2004199131A
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Japanese (ja)
Inventor
Masanori Shimizu
Kiyoshi Takahashi
Tadashi Yano
正則 清水
正 矢野
高橋  清
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Matsushita Electric Ind Co Ltd
松下電器産業株式会社
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Priority to JP2004199131A priority Critical patent/JP2006024615A/en
Publication of JP2006024615A publication Critical patent/JP2006024615A/en
Application status is Pending legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED lighting source in which the light extracting efficiency is improved. <P>SOLUTION: The lighting source includes an LED chip 12 mounted on a substrate 11, a fluorescent material resin 13 covering the LED chip 12, and a transparent resin 20 covering the fluorescent material resin 13. The fluorescent material resin 13 is formed of a fluorescent material for converting the light emitted from the LED chip 12 to the light having the wavelength which is longer than that of the relevant light and a resin for dispersing the fluorescent material. The upper surface of the transparent resin 20 is the LED lighting source 100 which is formed to have unevenness 21. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an LED illumination light source manufacturing method and an LED illumination light source. In particular, the present invention relates to a white LED illumination light source manufacturing method and a white LED illumination light source for general illumination.

  A light-emitting diode element (hereinafter referred to as an “LED element”) is a semiconductor element that is small, efficient, and emits brightly colored light, and has an excellent monochromatic peak. When emitting white light using an LED element, for example, it is necessary to arrange a red LED element, a green LED element, and a blue LED element in close proximity to perform diffusion color mixing, but each LED element has an excellent monochromatic peak. Therefore, color unevenness is likely to occur. That is, if the light emission from each LED element is not uniform and color mixing is not successful, white light emission with uneven color will occur. In order to solve the problem of such color unevenness, a technique for obtaining white light emission by combining a blue LED element and a yellow phosphor has been developed (for example, Patent Document 1 and Patent Document 2).

  According to the technique disclosed in Patent Document 1, white light emission is obtained by light emission from a blue LED element and light emission from a yellow phosphor that is excited by the light emission and emits yellow light. In this technique, since white light emission is obtained using only one type of LED element, the problem of color unevenness that occurs when white light emission is obtained by bringing a plurality of types of LED elements close to each other can be solved.

  Japanese Patent Application No. 2002-324313 (Applicant; Matsushita Electric Industrial Co., Ltd.) discloses an LED illumination light source that can solve the color unevenness problem of the bullet-type LED illumination light source disclosed in Patent Document 2. Has been. First, an LED illumination light source that can solve this color unevenness problem will be described.

  The bullet-type LED illumination light source disclosed in Patent Document 2 has a configuration as shown in FIG. That is, the bullet-type LED illumination light source 200 shown in FIG. 1 includes an LED element 121, a bullet-shaped transparent container 127 that covers the LED element 121, and lead frames 122 a and 122 b for supplying current to the LED element 121. A cup-shaped reflector 121 that reflects light emitted from the LED element 121 in the direction of arrow D is provided on the mount portion of the frame 122b on which the LED element 121 is mounted. The LED element 121 is sealed with a first resin portion 124 in which a fluorescent material 126 is dispersed, and the first resin portion 124 is covered with a second resin portion. When blue light is emitted from the LED element 121 and the fluorescent material 126 emits yellow light by the light, both colors are mixed to obtain white. However, because the first resin portion 124 is formed by filling the cup-shaped reflecting plate 123 so as to seal the LED element 121 and then curing it, the first resin portion 124 is enlarged as shown in FIG. Concavities and convexities are likely to occur on the upper surface of the resin part 124, resulting in unevenness in the thickness of the resin containing the fluorescent material 126, and the path through which the light from the LED element 121 passes through the first resin part 124 (for example, The amount of the fluorescent material 126 present on the optical paths E and F) varies, resulting in uneven color.

In order to solve such a problem, in the LED illumination light source disclosed in Japanese Patent Application No. 2002-324313, the reflecting surface of the light reflecting member (reflecting plate) is separated from the side surface of the resin portion in which the fluorescent material is dispersed. It is configured to let you. FIGS. 3A and 3B are a side sectional view and a top view showing an example of an LED illumination light source disclosed in Patent Document 5. FIG. In the LED illumination light source 250 shown in FIGS. 3A and 3B, the LED element 112 mounted on the substrate 111 is covered with a resin portion 113 in which a fluorescent material is dispersed. A reflective plate 151 having a reflective surface 151 a is attached to the substrate 111, and the side surface of the resin portion 113 and the reflective surface 151 a of the reflective plate 151 are formed apart from each other. Since the side surface of the resin portion 113 is formed away from the reflection surface 151a of the reflection plate 151, the shape of the resin portion 113 can be freely designed without being restricted by the shape of the reflection surface 151a of the reflection plate 151. As a result, the effect of reducing color unevenness can be exhibited.
Japanese Patent Laid-Open No. 10-242513 Japanese Patent No. 2998696 Japanese Patent Laid-Open No. 2003-23176 JP 2001-217467 A JP 2002-319708 A

  By taking the above-mentioned measures, the problem of color unevenness can be suppressed and alleviated, but there are still problems with the LED illumination light source. That is to meet the demand for increased luminous flux.

  First, to increase the luminous flux, it is conceivable to increase the number of LED elements 112. That is, by arranging a plurality of the configurations shown in FIG. 3 in a matrix as shown in FIG. 4 and increasing the number of LED elements 112, the luminous flux can be improved. In the LED illumination light source 250 shown in FIG. 4, the resin portions 113 covering the LED elements 112 are arranged in a matrix on the substrate 111, and the reflection plate 151 having the reflection surface 151 a corresponding to each resin portion 113 is the substrate. 111 is attached. With such a configuration, since the light flux of a plurality of LED elements can be used, it becomes easy to obtain a light flux equivalent to that of a general illumination light source (for example, an incandescent bulb or a fluorescent lamp) that is widely used today. .

  However, when the number of LED elements is increased to improve the luminous flux, the cost of the LED illumination light source becomes high, and it is necessary to take more sufficient heat dissipation measures against the heat emitted from many LED elements. . Even when a large number of LED elements are arranged, if the luminous flux of each LED element can be increased, naturally the luminous flux of the LED illumination light source is improved.

  Focusing on the individual LED elements, the LED elements have a problem that the light extraction efficiency is low, and as a result, the external quantum efficiency is low (for example, Patent Document 3 and Patent Document 4). That is, since the refractive index (n = about 3) of the semiconductor material constituting the LED element is larger than the refractive index (n = about 1 to 1.5) of the surrounding material, Snell's law (the law of refraction) The critical angle becomes very small, only a part of the light is emitted externally, and a lot of the other light is converted to heat, thus reducing the external quantum efficiency.

For example, in the example described in Patent Document 4, when the refractive index n1 of the semiconductor is 3.4 and the refractive index n2 of the surrounding material is 1.5, the critical angle θc = sin −1 (n2 / n1 ), The critical angle θc is 27 °. According to this, since only the light within the cone having an angle of 27 ° is emitted from the semiconductor surface, the light output efficiency is limited.

  Therefore, in Patent Document 4, in order to increase the probability of the critical angle incidence of light rays, a transparent substrate 302 having a rough surface 328 is disposed on the first surface 322 of the LED chip 300 as shown in FIG. The surface is made uneven so that the probability of incident light entering the critical angle can be increased.

  In the configuration shown in FIG. 5, the transparent ohmic electrode 304 and the reflective film 306 are sequentially stacked on the second surface 324 of the LED chip 300. The first contact electrode 308a and the second contact electrode 308b are disposed outside the reflective film 306 and the LED chip 308, respectively. The first contact electrode 308 a and the second contact electrode 308 b are electrically connected to the conductive wire 314 of the submount 310 via the solder paste 312. An antireflection film 326 is formed on the rough surface 328 of the transparent electrode 302.

  Further, the LED chip 300, the submount 310 and other components are mounted in the cup 330 of the lead frame 316. The conductive wire 314 and the lead frame 316 on the submount 310 are electrically connected by wire bonding using the lead wire 318. The cup 330 of the lead frame 316 is filled with a fluorescent resin body 320, and a part of light having a wavelength emitted from the LED chip 300 is absorbed, and a light beam corresponding to this is generated to generate white light. .

  According to the configuration shown in FIG. 5, since the fluorescent resin body 320 is filled in the cup 330, it is difficult to eliminate the color unevenness problem as described above with reference to FIG. 2. Further, when the configuration shown in FIG. 5 is applied to the configuration shown in FIG. 1, the extraction efficiency of light emitted from the phosphor resin portion 320 is improved. For example, the second resin portion 125 or a shell-shaped transparent container is used. No consideration is given to the fact that the light output efficiency is limited by 127.

  The present invention has been made in view of the above points, and its main purpose is an LED illumination light source capable of improving the light extraction efficiency and increasing the external quantum efficiency from the viewpoint different from the conventional one, and the production thereof. It is to provide a method. Another object of the present invention is to provide an LED illumination light source capable of improving light extraction efficiency while suppressing color unevenness and a method for manufacturing the same.

  The LED lighting device of the present invention includes an LED chip mounted on a substrate, a phosphor resin part that covers the LED chip, a translucent resin part that covers the phosphor resin part, and the translucent resin part. A lens formed so as to be molded, and the phosphor resin portion disperses the phosphor, which converts the light emitted from the LED chip into light having a wavelength longer than the wavelength of the light. The upper surface of the translucent resin portion is formed so as to have irregularities.

  Furthermore, it is preferable that a lens that covers the translucent resin portion is formed.

  In a preferred embodiment, the lens is made of a resin different from a resin constituting the translucent resin portion, and a refractive index of the resin constituting the lens is determined by the translucent resin portion. It is larger than the refractive index of the constituent resin.

  In a preferred embodiment, the resin constituting the lens is an epoxy resin.

  In a preferred embodiment, the unevenness formed on the upper surface of the translucent resin portion has a function of increasing the escape probability of light emitted from the LED chip and the phosphor resin portion.

  It is preferable that the shape of the translucent resin portion excluding the portion where the unevenness is formed and the shape of the phosphor resin portion are substantially similar.

  In a preferred embodiment, the substantially similar shape is a substantially cylindrical shape.

  In a preferred embodiment, the substrate further includes a reflective plate provided with an opening for accommodating the translucent resin portion, and a side surface defining the opening is emitted from the LED chip. It is a reflective surface that reflects light.

  It is preferable that the reflective surface and the side surface of the translucent resin portion are separated from each other.

  It is preferable that the LED chip is a bare chip LED, and the bare chip LED is two-dimensionally arranged and mounted on the substrate by a Philip chip.

  In the manufacturing method of the LED lighting device according to the present invention, the step (a) of preparing a substrate on which a plurality of LED chips are two-dimensionally arranged and the phosphor resin portion covering each of the plurality of LED chips are made in the same system. A step (b) of forming on the substrate, a step (c) of forming a translucent resin portion covering the phosphor resin portion on the substrate in the same manner, and a step of forming the translucent resin portion. A step (d) of forming irregularities on the upper surface.

  In a preferred embodiment, the step (c) and the step (d) are performed simultaneously.

  In the step (c), the translucent resin portion is formed so as to be substantially similar to the phosphor resin portion.

  In a preferred embodiment, the substantially similar shape is a substantially cylindrical shape.

  In a preferred embodiment, each of the plurality of LED chips is a bare chip LED, and the bare chip LED is mounted in a Philip chip on the substrate.

  The step (b) and the step (c) are preferably performed by a printing method.

  After the step (d), it is preferable to execute a step of forming a lens so as to mold the translucent resin portion.

  In another method of manufacturing an LED lighting device according to the present invention, the step (a) of preparing a substrate on which a plurality of LED chips are two-dimensionally arranged and the phosphor resin portion covering each of the plurality of LED chips are the same. A step (b) of forming on the substrate by a method, a step (d ′) of forming irregularities in a part of the translucent resin part that can cover the phosphor resin part, and the irregularities were formed. A step (c ′) of disposing a translucent resin portion on the substrate so as to cover the phosphor resin portion.

  Furthermore, it is preferable that a lens that covers the translucent resin portion is formed.

  In one embodiment, a phosphor may be formed on the translucent resin portion.

  In one embodiment, the LED chips are two-dimensionally arranged on the substrate. The LED chips can be arranged in a matrix. Alternatively, the LED chips may be arranged substantially concentrically or spirally.

  In one embodiment, the LED chip is a bare chip LED, and the bare chip LED is mounted on the substrate as a Philip chip.

  In one embodiment, the LED chip emits light having a peak wavelength in a visible range of wavelengths from 380 nm to 780 nm, and the phosphor is in the visible range of wavelengths from 380 n to 780 nm. The light having a peak wavelength different from the peak wavelength is emitted.

  In one embodiment, each of the plurality of LED chips is a blue LED element that emits blue light, and the phosphor is a yellow phosphor that converts yellow light.

  According to the LED illumination light source of the present invention, since the unevenness is formed on the upper surface of the translucent resin portion covering the phosphor resin portion, the probability of critical angle incidence emitted from the phosphor resin portion can be increased. As a result, the light extraction efficiency can be improved and the external quantum efficiency can be increased. That is, the unevenness formed on the upper surface of the translucent resin portion has a function of increasing the probability of escape of light emitted from the LED chip and the phosphor resin portion, thereby relaxing the limitation of output efficiency. Can do.

  In addition, when the reflecting surface of the reflecting plate provided with the opening for storing the translucent resin portion is separated from the side surface of the translucent resin portion, the shape of the phosphor resin portion is changed to the reflecting plate. Since it is possible to design freely without being restricted by the shape of the reflection surface 42 of 40, it is possible to obtain the effect of reducing the color unevenness caused by the uneven thickness of the phosphor resin portion. In the present invention, since unevenness is formed on the upper surface of the translucent resin portion without forming unevenness on the upper surface of the phosphor resin portion, occurrence of color unevenness due to a change in shape of the phosphor resin portion is suppressed. can do.

  In the manufacturing method of the LED illumination light source according to the present invention, the phosphor resin part that covers each of the plurality of LED chips arranged on the substrate is formed in the same manner, and then the translucent resin part that covers the phosphor resin part Is formed in the same manner, and the unevenness is formed on the upper surface of the translucent resin portion, so that an LED illumination light source that can improve the light extraction efficiency and increase the external quantum efficiency can be easily manufactured. Can do.

  When executing the step of forming the phosphor resin portion and the step of forming the translucent resin portion, if a printing method is used, a large number of items can be formed at a time, which is convenient. In addition, by using a printing method in both steps, both steps can be connected only by changing the plate, so that the throughput is improved. Moreover, it is also possible to perform collectively the process of forming a translucent resin part, and the process of forming an unevenness | corrugation in the upper surface of a translucent resin part.

  The inventor of the present application increases the probability of the critical angle incidence (light escape probability) of the light beam when the light from the resin part in which the phosphor is dispersed is emitted to the periphery, and the light extraction efficiency in the LED illumination light source And we thought to improve the external quantum efficiency. Here, if the conventional method of forming irregularities on the LED chip is diverted to form irregularities on the phosphor resin part, color unevenness may occur due to the shape change of the phosphor resin part. It might be. Therefore, the present inventor forms a new film (translucent resin portion) on the phosphor resin portion without processing the phosphor resin portion, and forms irregularities on the translucent resin portion. The inventors have conceived of improving the extraction efficiency and external quantum efficiency of the present invention, and have reached the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, components having substantially the same function are denoted by the same reference numerals for the sake of brevity. In addition, this invention is not limited to the following embodiment.

(Embodiment 1)
The LED illumination light source according to the embodiment of the present invention will be described with reference to FIGS. 6 and 7.

  FIG. 6 schematically shows the configuration of the LED illumination light source 100 of the present embodiment. The LED illumination light source 100 includes an LED chip 12 mounted on a substrate 11, a phosphor resin part 13 that covers the LED chip 12, and a translucent resin part 20 that covers the phosphor resin part 13. Concavities and convexities 21 are formed on the upper surface of the translucent resin portion 20. The phosphor resin portion 13 is composed of a phosphor (fluorescent substance) that converts light emitted from the LED chip 12 into light having a wavelength longer than the wavelength of the light, and a resin that disperses the phosphor. Yes.

  In the present embodiment, the shape of the translucent resin portion 20 excluding the portion where the irregularities 21 are formed and the shape of the phosphor resin portion 13 are substantially similar, and in the example shown in FIG. Each shape of the translucent resin part 20 and the phosphor resin part 13 is a columnar shape or a substantially columnar shape. The LED chip 12 is a bare chip LED and is mounted on the substrate 11 as a Philip chip.

  FIG. 7 shows a configuration in which a reflecting plate 40 and a lens 22 are provided in addition to the configuration shown in FIG. More specifically, the reflecting plate 40 provided with the opening 44 for accommodating the phosphor resin portion 13 on which the translucent resin portion 20 is formed is mounted on the substrate 11. Here, the reflecting plate 40 is mounted. The side surface that defines the opening 44 is a reflection surface 42 that reflects light emitted from the LED chip 12 and the phosphor resin portion 13. In addition, the reflective surface 42 and the side surface of the translucent resin part 20 are separated. Moreover, the lens 22 which has a condensing function is formed so that the translucent resin part 20 in which the unevenness | corrugation 21 was formed may be molded. That is, the lens 22 is formed so as to fill the opening 44 and cover the translucent resin portion 20.

  In the present embodiment, the lens 22 is made of a resin different from the resin constituting the translucent resin portion 20, and the refractive index of the resin constituting the lens 22 is the resin constituting the translucent resin portion 20. Is greater than the refractive index of. The lens 22 is made of, for example, an epoxy resin. In addition, the translucent resin part 20 can be comprised from a silicone resin, for example.

  According to the LED illumination light source 100 of the present embodiment, the unevenness 21 formed on the upper surface of the translucent resin portion 20 has a function of increasing the escape probability of light emitted from the LED chip 12 and the phosphor resin portion 13. ing. In other words, the unevenness 21 can increase the probability of critical angle incidence emitted from the phosphor resin part 13, and as a result, the light extraction efficiency can be improved and the external quantum efficiency can be increased. In addition, since the external quantum efficiency can be increased, it is possible to reduce the amount that has been converted into heat without being externally radiated, and therefore, it is useful for alleviating the deterioration of the resin due to heat.

  Furthermore, in order to increase the light escape probability, the phosphor resin portion 13 is not provided with irregularities, but the translucent resin portion 20 formed thereon is provided with irregularities 21, thereby changing the shape of the phosphor resin portion. It is possible to prevent the occurrence of color unevenness due to.

The configuration of the present embodiment will be described in detail as follows. The LED chip 12 in the present embodiment is an LED element that emits light having a peak wavelength in the visible range of wavelengths from 380 nm to 780 nm, and the phosphor dispersed in the phosphor resin portion 13 has wavelengths from 380 n. The phosphor emits light having a peak wavelength different from the peak wavelength of the LED chip 12 within a visible range of 780 nm. The LED chip 12 in the present embodiment is a blue LED chip that emits blue light, and the phosphor contained in the phosphor resin portion 13 is a yellow phosphor that converts yellow light. White light is formed by this light. The LED chip 12 in the present embodiment is an LED chip made of a gallium nitride (GaN) -based material, and emits light having a wavelength of 460 nm, for example. When an LED chip that emits blue light is used as the LED chip 12, the phosphor is (Y · Sm) 3 (Al · Ga) 5 O 12 : Ce, (Y 0.39 Gd 0.57 Ce 0.03 Sm 0 .01) 3 Al 5 O 12, etc. can be suitably used.

  The translucent resin portion 20 is made of, for example, a silicone resin. Silicone resin is preferable in that it has better heat resistance than epoxy resin and can withstand the influence of heat from the LED chip 12. Further, by interposing the translucent resin portion 20 made of silicone resin, when the lens 22 is denatured (colored) with high heat, there is an effect that the thermal degeneration of the lens 22 can be alleviated. The thickness of the translucent resin portion 20 can be set to, for example, 10 μm to 1 mm.

  The shape of the unevenness 21 formed on the upper surface of the translucent resin portion 20 is not particularly limited as long as it is a shape that improves the escape probability of light emitted from the phosphor resin portion 13. For example, FIG. 6 and FIG. As shown in FIG. 7, the shape of the cross section is triangular. In addition, the geometrical shape (for example, isosceles triangle, sawtooth shape, trapezoidal shape, substantially semicircular shape, etc.) is continuously formed by patterning, and the upper surface of the translucent resin portion 20 is roughened. Thus, it is possible to form random irregularities 21. Further, as shown in FIG. 6 and FIG. 7, a region (for example, more than half) that can obtain the effect of improving the light extraction efficiency without forming the unevenness 21 on the entire upper surface of the translucent resin portion 20. The unevenness 21 can be formed in the region), and the unevenness 21 can be formed not only on the upper surface but also on the side surface.

  In the example shown in FIGS. 6 and 7, when the size of the LED chip 12 is about 0.3 mm × about 0.3 mm, the diameter of the phosphor resin portion 13 is about 0.7 mm to about 0.9 mm (for example, 0.8 mm), and in this case, the thickness of the translucent resin portion 20 is, for example, 20 μm to 200 μm. Moreover, the height (distance between a valley and a mountain) of the unevenness | corrugation 21 is 5 micrometers-100 micrometers, for example.

  The lens 22 in this embodiment has both a role of condensing light emitted from the LED chip 12 and a role of molding the phosphor resin portion 13 covered with the translucent resin portion 20. The lens 22 is made of, for example, resin or glass. In this embodiment, an epoxy resin is used as a material constituting the lens 22. The diameter of the lens 22 is, for example, 2 to 7 mm, and the height thereof is, for example, 1 to 15 mm.

  The reflecting plate 40 having the reflecting surface 42 arranged around the lens 22 and the LED chip 12 is made of, for example, metal and is made of aluminum, copper, stainless steel, iron, or an alloy thereof. The opening 44 of the reflecting plate 40 is filled with the material constituting the lens 22, and the phosphor resin portion 13 covered with the translucent resin portion 20 is molded and above the phosphor resin portion 13. A substantially hemispherical portion is formed above the reflecting plate 40. In the example shown in FIG. 7, the material (or mold material) constituting the lens 22 also extends to the upper surface of the reflection plate 40.

  A multilayer substrate can be used as the substrate 11 of this embodiment, and an example thereof is shown in FIG. The multilayer substrate 30 (11) shown in FIG. 8 includes a base substrate 32 and a wiring layer 34 formed on the base substrate 32. The base substrate 32 is, for example, a metal substrate, and the wiring layer 34 includes a wiring pattern 36 formed on a composite layer made of an inorganic filler and a resin. The reason why the metal substrate is used for the base substrate 32 and the composite layer is used for the wiring layer 34 is to improve the heat dissipation from the LED chip 12. In this example, the wiring layer 34 is a multilayer wiring board, and the LED chip 12 is mounted on the uppermost wiring pattern 36 by a Philip chip.

  An underfill (stress relaxation layer) may be provided between the reflector 40 and the wiring layer 34. By providing the underfill, it is possible to relieve stress caused by a difference in thermal expansion between the metal reflector 40 and the wiring layer 34, and between the reflector 40 and the uppermost wiring pattern 36. It is also possible to ensure electrical insulation.

  In the configuration of this example, the side surface of the phosphor resin portion 13 covered with the translucent resin portion 20 and the reflection surface 42 of the reflection plate 40 are formed so as to be separated from each other. By forming them apart from each other, the shape of the phosphor resin portion 13 can be freely designed without being restricted by the shape of the reflecting surface 42 of the reflecting plate 40. As a result, the thickness of the resin portion is uneven. It is possible to obtain an effect of reducing color unevenness caused by the cause. Since the configuration and effect of the separation are described in Japanese Patent Application No. 2002-324313 (Applicant; Matsushita Electric Industrial Co., Ltd.), the Japanese Patent Application No. 2002-324313 is referred to the present specification for reference. The details are omitted here.

  In addition, in the present embodiment, the case where the phosphor resin portion 13 has a substantially cylindrical shape has been described. However, the substantially columnar shape here includes a polygon having a cross section of a perfect circle and a vertex having six or more vertices. be able to. This is because a polygon having six or more vertices can be identified as a “circle” because of its substantial axial symmetry. When the phosphor resin portion 13 having a substantially cylindrical shape is used, it is preferably used when the LED chip 12 is mounted on the substrate 30 (11) in a Philip chip, as compared with a triangular prism or a quadrangular prism. Even when the LED chip 12 is rotated by ultrasonic vibration when using the sonic Philip chip mounting, it is possible to obtain an effect that the light distribution characteristics of the LED element are hardly affected.

  In the LED illumination light source 100 of the present embodiment, a plurality of LED chips 12 can be used. Specifically, it is possible to construct the LED illumination light source 100 in which the structure shown in FIG. 7 or FIG. 8 is used as one unit and arranged two-dimensionally (for example, in a matrix). One such example is shown in FIG.

  FIG. 9 shows a configuration of a card type LED illumination light source 100 including a plurality of LED chips 12. On the surface of the card-type LED illumination light source 100, a power supply terminal 38 that is electrically connected to the wiring pattern 36 and supplies power to the LED chip 12 is provided. When the card type LED illumination light source 100 is used, a connector (not shown) in which the LED illumination light source 100 can be detachably inserted and a lighting circuit (not shown) are electrically connected, and the card type LED illumination is connected to the connector. The light source 100 may be inserted and used.

  Next, the effect of the unevenness 21 in the configuration of the present embodiment will be described with reference to FIGS. 10 to 16.

  The inventor of the present application performed a simulation to verify the effect of the unevenness 21. As shown in FIGS. 10A and 10C, on the base (substrate) 20 ′, triangular pyramid-shaped irregularities 21 ′ are formed in a matrix, and the irregularities 21 in FIG. By changing the height x and the distance L between the bottom surfaces, various shapes of the unevenness 21 were created and evaluated using the angle θ. 10A is a cross-sectional view, FIG. 10B is a partially enlarged view, and FIG. 10C is a perspective view. FIG. 10C shows an example in which 10 × 10 convex portions 21 ′ are formed.

  An LED chip 12 'used for the simulation evaluation is shown in FIG. FIG. 11A is a side sectional view, and FIG. 11B is a plan sectional view. The evaluation chip 12 ′ is obtained by forming a coating film 20 ′ on the top surface and side surfaces of the bare chip 12. The top surface of the coating film 20 ′ is provided with irregularities 21 ′, as shown in FIG. It becomes the composition. The bare chip 12 includes a substrate 12a, a buffer layer 12b, an n-GaN layer 12c, an n-AlGaN layer 12d, a light emitting layer 12e, a p-AlGaN layer 12f, a p-GaN layer 12g, an n-type electrode and a p-type electrode in order from the upper layer. 12h is laminated and formed.

The substrate 12a is a sapphire substrate having a thickness of 63 μm, and N (refractive index) is 1.768. When the substrate 12a is replaced with a GaN substrate, N is 2.6. The buffer layer 12b has a thickness of 0.027 μm. The n-GaN layer 12c is made of Si-doped GaN, has a thickness of 6 μm, and N is 2.6. The n-AlGaN layer 12d is made of Si-doped Al 0.1 Ga 0.9 N, has a thickness of 0.050 μm, and N is 2.4 (or 2.2 to 2.6). The light emitting layer 12e is composed of a multiple quantum well (MQW) layer in which four combinations of InGaN layers and GaN layers are stacked. The light emitting layer 12e has a thickness of 0.003 μm and N is 2.83 (or 2.2 to 3.45). The p-AlGaN layer 12f is made of Mg-doped Al 0.1 Ga 0.9 N, has a thickness of 0.050 μm, and N is 2.4 (or 2.2 to 2.6). The p-GaN layer 12g is made of Mg-doped GaN, has a thickness of 0.100 μm, and N is 2.6. The thicknesses of the n-type electrode and the p-type electrode 12h are 0.100 μm, and ρ (electric resistivity) is 0.8 [Ω · m]. The thickness of the coating film 20 ′ was 100 μm. The width W of the LED chip 12 ′ excluding the coating film 20 ′ is 300 to 5000 μm, and is 1000 μm in this simulation (see FIG. 11B).

  First, the coating film 20 ′ has the same refractive index (N = 1.768) as sapphire, and 5 × 5, 10 × 10, and 20 × 20 pyramids are formed on the upper surface of the coating film 20 ′. The relationship between the angle θ (°) of the convex portion 21 ′ and the total luminous flux (lm) was calculated by simulation for the configuration example in which the convex portion 21 ′ was formed. Here, it is assumed that air (N = 1.0) exists around the coating film 20 '. The result is shown in FIG. Note that the parameter of the angle θ (°) is obtained by changing the height x and the width L in FIG.

  As shown in FIG. 12, it can be seen that the total luminous flux is larger when the convex portion 21 'is formed than when the angle θ is 0 ° when the convex portion 21' is not formed. In the case of 5 × 5, the total luminous flux tends to increase as the angle increases. On the other hand, in the case of 20 × 20, the total luminous flux tends to increase as the angle decreases. However, it was found that there is a certain degree of correlation between the angle and the total luminous flux rather than the tendency for each number of arrays (10 × 10 are almost flat between 30 ° and 50 °). In general, it can be seen from the graph that a local maximum appears to exist between 30 ° and 50 °.

  Next, a simulation was performed by changing the relationship between the refractive index (N1) of the coating film 20 'shown in FIG. 11 and the refractive index (N2) around it. Table 1 below shows the critical angle (θc) defined by the refractive index (N1) of the coating film 20 'and the surrounding refractive index (N2).

  Here, the surrounding refractive index N2 is 1.0 for air, 1.407 for relatively soft silicone, and 1.53 for relatively hard silicone. In N1 of the coating film 20 ', the range of HS in the table corresponds to the range of relatively soft silicone, the range of SS to the range of relatively hard silicone, and the range of EP to the range of epoxy.

  When the refractive index (N1) of the coating film 20 ′ is 1.4 (soft silicone) and the surrounding refractive index (N2) is 1.0 (air), the angle θ (see FIG. 10B) and When the relationship with the luminous flux (relative value) was obtained by simulation, it was as shown in FIG. The thick line is the simulation result. For reference, the results of 5 × 5 and 20 × 20 in FIG. 12 are also shown.

  From this result, even when the coating film 20 ′ is made of a resin (for example, translucent resin, here, silicone), by forming irregularities (convex portions 21 ′) on the upper surface of the coating film 20 ′. It was found that the luminous flux can be improved. In the maximum value of the luminous flux in FIG. 13, the angle θ is about 45 °, and the value of the angle θ is somehow the same as the value of the critical angle (θc). In the range of common sense thought by those skilled in the art, it is a fact that the reason why the value between the angle θ (see FIG. 10B) and the critical angle (θc) determined by the refractive index of the substance coincide is not known. However, according to the study of the present inventor, when forming a convex portion having a triangular cross section, it is preferable that the angle θ of the convex portion substantially coincides with the critical angle θc (for example, the critical angle θc ± 5 °). It was found.

  FIG. 14 shows a simulation result when N1 is 1.53 (hard silicone) and N2 is 1.407 (soft silicone). From the results shown in FIG. 14, even when the coating film 20 ′ is a resin (here, hard silicone) and the periphery is also a resin (here, soft silicone), the upper surface of the coating film 20 ′ has irregularities (convex portions). It has been found that the luminous flux can be improved by forming 21 ′). Also in the result shown in FIG. 14, the maximum value of the luminous flux (thick line) almost coincides with the value of the critical angle θc (66.87 °) (for example, the critical angle θc ± 5 °). It was also found in this example that it is preferable to

  In the above configuration example, the concave and convex portion 21 (or the convex portion 21 ′) having a triangular cross section has been described. However, the concave and convex portion 21 can increase the escape probability of light emitted from the LED chip 12 and the phosphor resin portion 13. As long as it has a shape, the present invention is not limited thereto, and for example, unevenness 21 having a semicircular cross section as shown in FIG. 15 may be used, or unevenness 21 having a trapezoidal shape as shown in FIG. In addition, as described above, the geometrically identical pattern is not limited to being regularly arranged, but may be irregularly arranged, or a random pattern may be arranged on the upper surface of the translucent resin portion 20. You may form in.

(Embodiment 2)
Next, the manufacturing method of the LED illumination light source 100 of this embodiment is demonstrated, referring FIG. 17 and FIG.

  In the manufacturing method of the present embodiment, after preparing a substrate 11 in which a plurality of LED chips 12 are two-dimensionally arranged, a phosphor resin portion 13 covering each LED chip 12 is formed on the substrate 11 by the same method. Then, the translucent resin portion 20 that covers the phosphor resin portion 13 is formed on the substrate 11 by the same method, and then the unevenness 21 is formed on the upper surface of the translucent resin portion 20. In the present embodiment, the phosphor resin portion 13 and the translucent resin portion 20 are formed using a printing method. Moreover, the unevenness 21 can also be formed by a printing method.

  FIG. 17 is a process diagram showing a process of forming a plurality of phosphor resin portions 13 at one time using the stencil printing method. In this printing method, a printing plate 60 having an opening (through hole) 64 corresponding to the size and shape of the phosphor resin portion 13 is formed on the substrate 11 on which the plurality of LED chips 12 are arranged. The resin paste 70 provided on the printing plate 60 is put in the opening 64 by moving the squeegee 62 along the printing direction by arranging the resin paste 70 according to the position, and then moving the squeegee 62 along the printing direction. This is done by covering the LED chip 12. When printing is finished, the printing plate 60 is removed. Since the fluorescent material is dispersed in the resin paste 70, when the resin paste 70 is cured, the phosphor resin portion 13 containing the fluorescent material is obtained. Then, the translucent resin part 20 can be formed at once by changing the printing plate 60 and the resin paste 70 to desired ones. And the unevenness | corrugation 21 can also be formed using a printing system.

  Hereinafter, the manufacturing method of this embodiment will be described in detail with reference to FIGS. 18 (a) to 20 (c).

  First, as shown in FIG. 18A, the substrate 11 on which the plurality of LED chips 12 are arranged is mounted on the stage 50. A metal mask (printing plate) 60 is disposed above the substrate 11, and the metal mask 60 has openings 64 corresponding to the LED chips 12 and defining the shape of the phosphor resin portion 13. ing. A phosphor paste 70 is placed on a part of the upper surface of the metal mask 60, and the phosphor paste 70 is printed by the squeegee 62.

  From the state shown in FIG. 18A, the stage 50 and the metal mask 60 are brought into contact as shown in FIG. 18B (see arrow 81). Next, as shown in FIG. 18C, the squeegee 62 is moved as indicated by an arrow 82 to perform printing. That is, the phosphor paste 70 is filled in the opening 64 of the metal mask 60 to form the phosphor resin portion 13 that covers the LED chip 12.

  Thereafter, as shown in FIG. 18D, when the stage 50 and the metal mask 60 are separated (see arrow 83), a structure in which the phosphor resin portions 13 are arranged on the substrate 11 can be obtained.

  Next, the metal mask 61 is changed to one that defines the position and shape of the translucent resin portion 20, and the printing process is similarly performed.

  That is, as shown in FIG. 19A, a metal mask (printing plate) 61 is arranged on the substrate 11 on which the phosphor resin portions 13 covering the LED chips 12 are arranged. The metal mask 61 has an opening 65 that defines the position and shape of the translucent resin portion 20. A resin paste 71 is placed on a part of the upper surface of the metal mask 61, and the resin paste 71 is printed by the squeegee 62. In FIGS. 18A to 18D, eight LED chips 12 are illustrated, but in FIGS. 19A to 19C, four LED chips 12 are illustrated.

  From the state shown in FIG. 19A, as shown in FIG. 19B, the stage 50 and the metal mask 61 are brought into contact (see arrow 81), and then the squeegee 62 is moved as shown by the arrow 82. Print. That is, the resin paste 71 is filled in the opening 65 of the metal mask 61 to form the translucent resin portion 20 that covers the phosphor resin portion 13. Then, as shown in FIG. 19C, the stage 50 and the metal mask 61 are separated (see arrow 83).

  Next, as shown in FIG. 20A, a metal mask (printing plate) 66 is placed on the substrate 11 on which the translucent resin portion 20 is formed. The metal mask 66 has an opening 67 that defines the position and shape of the unevenness 21. A resin paste 71 is placed on a part of the upper surface of the metal mask 66, and the resin paste 71 is printed by the squeegee 62.

  From the state shown in FIG. 20 (a), as shown in FIG. 20 (b), the stage 50 and the metal mask 66 are brought into contact (see arrow 81), and then the squeegee 62 is moved as shown by arrow 82. Print. Then, the resin paste 71 is filled in the opening 67 of the metal mask 66, and the unevenness 21 is formed on the upper surface of the translucent resin portion 20. Thereafter, as shown in FIG. 20C, when the stage 50 and the metal mask 66 are separated (see arrow 83), the LED illumination light source 100 of the present embodiment is obtained. After that, when the reflecting plate 40 having the opening 44 is placed on the substrate 11 and the lens 22 is formed so as to fill the opening 44, the structure shown in FIG.

  In the manufacturing method of the LED illumination light source according to the present embodiment, the phosphor resin portion 13 that covers each LED chip 12 is formed on the substrate 11 by the same method, and then the translucent resin portion that covers the phosphor resin portion 13 is formed. 20 is formed by the same method, and furthermore, the unevenness 21 is formed on the upper surface of the translucent resin portion 20 by the same method, so that the LED illumination light source 100 with improved light extraction efficiency can be easily manufactured. it can. In the above-described example, the steps can be connected only by changing the plate, so that the throughput is good.

  That is, since the printing method is used for both the step of forming the phosphor resin portion 13 and the step of forming the translucent resin portion 20, even if many LED chips 12 are two-dimensionally arranged, all at once. Can be formed. Furthermore, the process of forming the phosphor resin part 13 and the process of forming the translucent resin part 20 can be connected to each other only by changing the metal mask (60, 61). Registration can also be performed relatively easily and the throughput is also good. In addition, it is possible to easily form the translucent resin portion 20 having a shape substantially similar to the phosphor resin portion 13, and therefore, the thin translucent resin portion 20 (for example, having a thickness of 50 μm or less). However, it can be formed easily.

  Further, since the process of forming the unevenness 21 formed on the translucent resin portion 20 also uses the printing method, it is well connected to the previous process, and highly accurate alignment can be performed relatively easily. Therefore, the throughput is also good. And since the unevenness | corrugation 21 is formed by the printing system using the printing board 66, the pattern of a predetermined geometric shape can be obtained correctly and simply. Therefore, for example, it is possible to accurately and simply form a triangular pattern (pyramid, cone, etc.) having an angle θ that is substantially the same as the critical angle θc.

  In the present embodiment, an example in which the unevenness 21 is formed on almost the entire upper surface of the translucent resin portion 20 is shown, but a part of the upper surface of the translucent resin portion 20 (for example, a half region or more) is formed. The unevenness 21 may be formed.

  In addition to the above-described method, it is also possible to form the translucent resin portion 20 having various shapes by appropriately changing the mask for forming the translucent resin portion 20. Moreover, the translucent resin part 20 and the unevenness | corrugation 21 can also be formed simultaneously.

  FIGS. 21A to 21C are process cross-sectional views illustrating a method of forming a substantially hemispherical translucent resin portion 20 having irregularities 21.

  As shown in FIG. 21A, a mask 68 in which an opening 69 that defines the shape of the substantially hemispherical translucent resin portion 20 is aligned with the stage 50 (see arrow 81). The mask 68 is also formed with an opening 69 a that defines the shape of the unevenness 21.

  Next, as shown in FIG. 21B, printing is performed (see arrow 82). Thereafter, as shown in FIG. 21C, when the mask 68 and the stage 50 are separated (see arrow 83), the substantially hemispherical translucent resin portion 20 having the unevenness 21 can be obtained.

  This method is convenient because the translucent resin portion 20 and the unevenness 21 can be formed simultaneously. Moreover, since it forms at once, the alignment with the translucent resin part 20 and the unevenness | corrugation 21 can also be made favorable.

  In the above-described embodiment, the stencil printing method has been described as a method of forming by the same method (so-called simultaneous forming method), but the intaglio printing method and the transfer method (lithographic method) can also be used. Is possible. The intaglio printing method uses a printing plate having an opening that does not penetrate, and the transfer method (planar printing method) uses a resist after a photosensitive resin film is provided on the plate. An opening having a shape is produced and the opening is used. Moreover, as shown in FIG. 22, a dispenser system can be adopted. That is, the translucent resin portion 20 having the unevenness 21 may be formed using the mask 68 ′ and the dispenser 90.

  Furthermore, after forming the translucent resin part 20 which has the unevenness | corrugation 21 previously, it is also possible to form the translucent resin part 20 so that the fluorescent substance resin part 13 may be covered. In this case, as shown in FIGS. 23A to 23D, for example, the translucent resin portion 20 may be formed using a mold.

  First, the resin paste 71 constituting the translucent resin portion 20 is poured into a mold as shown in FIG. The mold shown in FIG. 21 is provided with a lower mold 94 in which the shape of the translucent resin portion 20 is defined on the substrate 96 and a protrusion 93 that defines the shape of the phosphor resin portion 13. The resin paste 71 is poured into the lower mold 94. The lower mold 94 is also formed with an opening 69a for defining the unevenness 21.

  Next, as shown in FIG. 23 (b), the upper die 92 and the lower die 94 are put together and the die is inserted, and then, as shown in FIG. 23 (c), the upper die 92 and the lower die 94 are fitted. Are released from the mold, and the translucent resin portion 20 having the unevenness 21 is obtained. Finally, as shown in FIG. 23 (d), when the translucent resin portion 20 having the unevenness 21 is set in the corresponding phosphor resin portion 13, the LED illumination light source 100 of this embodiment is completed.

  Further, for example, in the steps shown in FIGS. 20A to 20C, the unevenness 21 is formed by one printing, but the printing step may be performed a plurality of times. For example, as shown in FIG. 24A, after forming the trapezoidal cross-sectional irregularities 21 on the translucent resin portion 20 by the first printing using the mask 66, using a different mask 66 ′, Further unevenness can be formed on the unevenness 21. By doing so, it is also possible to form the irregularities 21 having a complicated shape.

  In the steps shown in FIGS. 23A and 23B, the unevenness 21 and the translucent resin portion 20 are simultaneously formed using a mold. However, the present invention is not limited to this, and the unevenness 21 is formed using a potting method. Then, it may be mounted on the translucent resin portion 20. That is, as shown in FIG. 25A, the unevenness 21 is formed using the mold 94, and thereafter, mounted on the upper surface of the translucent resin portion 20 and bonded as shown in FIG. In FIG. 25, the cross section has a curved shape, but as shown in FIG. 26, the cross section may have a straight shape.

  Moreover, you may use not only the shaping | molding by a type | mold but a cutting system. For example, as shown in FIG. 27A, after a thick resin (silicone) 20 ′ is formed by printing or potting as shown in FIG. 27A, a cutting tool (eg, blade) 98 is formed as shown in FIG. Is used to form a desired shape. After forming the translucent resin part 20, the unevenness 21 may be formed by cutting, or after forming the unevenness 21 by cutting, it may be placed on the upper surface of the translucent resin part 20.

  Furthermore, as shown in FIGS. 28A and 28B, it is also possible to form the unevenness 21 using an injection molding method. This is performed by injecting resin into a mold 99 having openings 99a and 99b, molding, and mounting and adhering the obtained molded product. Note that when the irregular pattern of irregularities 21 is formed, the upper surface of the translucent resin portion 20 may be subjected to a sand blasting process or a predetermined etching process.

  As described above, by using the LED illumination light source 100 of this embodiment, a light source with improved light extraction efficiency can be obtained. And as a concrete usage form of this LED illumination light source 100, a form as shown in FIG.29, FIG.30 and FIG.31 is employable, for example. The LED illumination light source 100 in this example is a card-type LED illumination light source, and FIG. 29 shows an example of the configuration of a table lamp. FIG. 30 shows an example of a configuration that can be replaced with a straight tube fluorescent lamp, and FIG. 31 shows an example of a configuration that can be replaced with a round tube fluorescent lamp.

  In the case of the configuration shown in FIG. 29, the card-type LED illumination light source 100 is set by being inserted into the receiving portion 164 provided in the main body portion 160 and can be turned on. In the configuration shown in FIGS. 30 and 31, the card-type LED illumination light source 100 is set through a slot 165 provided in the main body 160 and can be turned on. A commercial power source is connected to the main body 160 and a lighting circuit is also incorporated. Since the card-type LED illumination light source 100 is a light source with improved light extraction efficiency, illumination light with improved luminous flux can be obtained even in the forms shown in FIGS. 29, 30 and 31.

  In the present embodiment, the white LED illumination light source 100 using the combination of the blue LED element 12 and the yellow phosphor has been described. However, the white LED illumination light source includes an ultraviolet LED element that emits ultraviolet light and light from the ultraviolet LED element. White LED illumination light sources are also being developed that are combined with phosphors that emit red (R), green (G), and blue (B) light when excited by the above. Even when an ultraviolet LED element is used or in other cases, the light output efficiency is limited by the critical angle θc due to the difference in the refractive index of the substance, so that the technique of this embodiment can be suitably applied. The ultraviolet LED element emits light of 380 nm to 400 nm, and phosphors emitting red (R), green (G), and blue (B) light are within the visible range of wavelengths 380 nm to 780 nm. Have a peak wavelength (that is, a peak wavelength of 450 nm, a wavelength of 540 nm, and a wavelength of 610 nm).

  In the above embodiment, one LED chip 12 is arranged in one phosphor resin part 13, but not necessarily one LED chip 12, but two or more LEDs in one phosphor resin part 13. The chip 12 may be disposed. FIGS. 32A and 32B show a configuration in which the LED chips 12A and 12B are arranged in one phosphor resin portion 13 and the phosphor resin portion 13 is covered with the translucent resin portion 20. FIG. Yes. Concavities and convexities 21 are formed on the upper surface of the translucent resin portion 20.

  The LED chips 12A and 12B may be LED chips that emit light in the same wavelength region, or LED chips that emit light in different wavelength regions. For example, the LED chip 12A can be a blue LED chip, and the LED chip 12B can be a red LED chip. When both the blue LED chip 12A and the red LED chip 12B are used, it is possible to construct a white LED illumination light source that is excellent in color rendering for red. To explain further, when a blue LED chip and a yellow phosphor are combined, white can be generated, but the red component is insufficient, resulting in a white LED illumination light source with poor color rendering for red. End up. Therefore, when the red LED chip 12B is added to the blue LED chip 12A, the color rendering property for red is also excellent, and an LED illumination light source more suitable for general illumination can be realized.

  As mentioned above, although this invention was demonstrated by suitable embodiment, such description is not a limitation matter and of course various modifications are possible. For example, it is possible to adopt a form in which a phosphor is further added to the surface of the translucent resin portion 20 having the unevenness 21.

  According to the present invention, an LED illumination light source with improved light extraction efficiency can be provided, which can contribute to the popularization of LED illumination light sources for general illumination.

Sectional drawing which shows typically the structure of the bullet-type LED illumination light source disclosed by patent document 2 Enlarged view of the main part of the bullet-type LED illumination light source shown in FIG. (A) is side surface sectional drawing which shows an example of the LED illumination light source disclosed by Japanese Patent Application No. 2002-324313, (b) is the top view. 3 is a perspective view of a configuration example in which a plurality of the configurations shown in FIG. 3 are arranged in a matrix. Side surface sectional view which shows an example of the LED illumination light source disclosed by patent document 4 Sectional drawing which shows typically the structure of the LED illumination light source 100 which concerns on embodiment of this invention. Sectional drawing which shows typically the structure of the LED illumination light source 100 which concerns on embodiment of this invention. Sectional drawing which shows typically the structure of the LED illumination light source 100 which concerns on embodiment of this invention. The perspective view which shows typically the structure of the card type LED illumination light source 100 which concerns on embodiment of this invention. (A) is a cross-sectional view of a structure in which triangular pyramids 21 'having a pyramid shape are formed in a matrix, (b) is a partially enlarged view thereof, and (c) is a perspective view thereof. (A) is a side sectional view of the LED chip 12 ′, and (b) is a plan sectional view of the LED chip 12 ′. A graph showing the relationship between the angle θ (°) and the total luminous flux (lm) Graph showing the relationship between angle θ (°) and luminous flux (relative value) Graph showing the relationship between angle θ (°) and luminous flux (relative value) Sectional drawing which shows the structure of the unevenness | corrugation 21 whose cross section is semicircle shape typically Sectional drawing which shows the structure of the unevenness | corrugation 21 whose cross section is trapezoid shaped typically The perspective view for demonstrating the printing system for manufacturing LED illumination light source (A) to (d) is a process cross-sectional view for explaining a manufacturing method of the LED illumination light source 100 according to the embodiment of the present invention. (A) to (c) is a process cross-sectional view for explaining a manufacturing method of the LED illumination light source 100 according to the embodiment of the present invention. (A) to (c) is a process cross-sectional view for explaining a manufacturing method of the LED illumination light source 100 according to the embodiment of the present invention. (A) to (c) is a process cross-sectional view for explaining a manufacturing method of the LED illumination light source 100 according to the embodiment of the present invention. Process sectional drawing for demonstrating the manufacturing method of the LED illumination light source 100 which concerns on embodiment of this invention. (A) to (d) is a process cross-sectional view for explaining a manufacturing method of the LED illumination light source 100 according to the embodiment of the present invention. (A) And (b) is process sectional drawing for demonstrating the manufacturing method of the LED illumination light source 100 which concerns on embodiment of this invention. (A) And (b) is process sectional drawing for demonstrating the manufacturing method of the LED illumination light source 100 which concerns on embodiment of this invention. Process sectional drawing for demonstrating the manufacturing method of the LED illumination light source 100 which concerns on embodiment of this invention. (A) And (b) is process sectional drawing for demonstrating the manufacturing method of the LED illumination light source 100 which concerns on embodiment of this invention. (A) And (b) is process sectional drawing for demonstrating the manufacturing method of the LED illumination light source 100 which concerns on embodiment of this invention. The perspective view which shows the usage pattern of the LED illumination light source 100 typically The perspective view which shows the usage pattern of the LED illumination light source 100 typically The perspective view which shows the usage pattern of the LED illumination light source 100 typically (A) is side surface sectional drawing which shows the structure which has arrange | positioned LED chip 12A, 12B in the one fluorescent substance resin part 13, (b) is the top view.

Explanation of symbols

11 Substrate 12 LED chip (LED element)
DESCRIPTION OF SYMBOLS 13 Fluorescent resin part 20 Translucent resin part 21 Concavity and convexity 22 Lens 30 Multilayer substrate (board | substrate)
32 Base substrate 34 Wiring layer 36 Wiring pattern 38 Power supply terminal 40 Reflecting plate 42 Reflecting surface 50 Stage 60, 61 Printing plate (metal mask)
62 Squeegee 66,68 Printing board (metal mask)
DESCRIPTION OF SYMBOLS 70 Resin paste 71 Resin paste 90 Dispenser 94 type 99 type 100 Illumination light source 160 Main part 164 Receiving part 165 Slot 200 Illumination light source 250 Illumination light source

Claims (18)

  1. An LED chip mounted on a substrate;
    A phosphor resin portion covering the LED chip;
    A translucent resin portion covering the phosphor resin portion,
    The phosphor resin part is composed of a phosphor that converts light emitted from the LED chip into light having a wavelength longer than the wavelength of the light, and a resin that disperses the phosphor.
    An LED illumination light source, wherein an upper surface of the translucent resin portion is formed to have irregularities.
  2. Furthermore, the LED illumination light source of Claim 1 in which the lens which covers the said translucent resin part is formed.
  3. The lens is made of a resin different from the resin constituting the translucent resin part,
    The LED lighting device according to claim 2, wherein a refractive index of the resin constituting the lens is larger than a refractive index of a resin constituting the translucent resin portion.
  4. The LED illumination device according to claim 3, wherein the resin constituting the lens is an epoxy resin.
  5. The unevenness formed on the upper surface of the translucent resin portion has a function of increasing the escape probability of light emitted from the LED chip and the phosphor resin portion, according to any one of claims 1 to 4. LED lighting apparatus of description.
  6. The LED illumination light source according to claim 1, wherein a shape of the translucent resin portion excluding the portion where the irregularities are formed and a shape of the phosphor resin portion are substantially similar.
  7. The LED lighting device according to claim 6, wherein the substantially similar shape is a substantially cylindrical shape.
  8. Furthermore, a reflective plate provided with an opening for storing the translucent resin portion is provided on the substrate,
    The LED illumination light source according to claim 1, wherein a side surface defining the opening is a reflection surface that reflects light emitted from the LED chip.
  9. The LED illumination light source according to claim 8, wherein the reflection surface and the side surface of the translucent resin portion are separated from each other.
  10. The LED chip is a bare chip LED,
    The LED illumination light source according to any one of claims 1 to 8, wherein the bare chip LEDs are two-dimensionally arranged and mounted on the substrate as a Philip chip.
  11. Preparing a substrate in which a plurality of LED chips are two-dimensionally arranged (a);
    Forming a phosphor resin portion covering each of the plurality of LED chips on the substrate in the same manner (b);
    A step (c) of forming a translucent resin portion covering the phosphor resin portion on the substrate in the same manner;
    The manufacturing method of an LED illumination light source including the process (d) which forms an unevenness | corrugation in the upper surface of the said translucent resin part.
  12. The method of manufacturing an LED lighting device according to claim 11, wherein the step (c) and the step (d) are performed simultaneously.
  13. The method of manufacturing an LED illumination light source according to claim 11, wherein in the step (c), the translucent resin portion is formed to be substantially similar to the phosphor resin portion.
  14. The method of manufacturing an LED illumination light source according to claim 13, wherein the substantially similar shape is a substantially cylindrical shape.
  15. Each of the plurality of LED chips is a bare chip LED,
    The said bare chip LED is a manufacturing method of the LED illumination light source as described in any one of Claim 11 to 14 by which the lip chip mounting is carried out on the said board | substrate.
  16. The said process (b) and the said process (c) are the manufacturing methods of the LED illumination light source as described in any one of Claim 11 to 15 performed by a printing system.
  17. The manufacturing method of the LED illumination light source as described in any one of Claim 11 to 16 which performs the process of forming a lens so that the said translucent resin part may be molded after the said process (d).
  18. Preparing a substrate in which a plurality of LED chips are two-dimensionally arranged (a);
    Forming a phosphor resin portion covering each of the plurality of LED chips on the substrate in the same manner (b);
    A step (d ′) of forming irregularities in a part of the translucent resin portion that can cover the phosphor resin portion;
    A step (c ′) of arranging the translucent resin portion having the irregularities on the substrate so as to cover the phosphor resin portion.
JP2004199131A 2004-07-06 2004-07-06 Led lighting source and manufacturing method thereof Pending JP2006024615A (en)

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