JP2006016249A - AlxXGayIn1-x-yN SUBSTRATE AND CLEANING METHOD FOR THE SAME - Google Patents

AlxXGayIn1-x-yN SUBSTRATE AND CLEANING METHOD FOR THE SAME Download PDF

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JP2006016249A
JP2006016249A JP2004195506A JP2004195506A JP2006016249A JP 2006016249 A JP2006016249 A JP 2006016249A JP 2004195506 A JP2004195506 A JP 2004195506A JP 2004195506 A JP2004195506 A JP 2004195506A JP 2006016249 A JP2006016249 A JP 2006016249A
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substrate
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Shinsuke Fujiwara
Keiji Ishibashi
Tomoyoshi Kamimura
Hideaki Nakahata
智喜 上村
英章 中幡
恵二 石橋
伸介 藤原
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Sumitomo Electric Ind Ltd
住友電気工業株式会社
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N substrate capable of stably growing a high quality epitaxial membrane, and a cleaning method for obtaining the substrate. <P>SOLUTION: This Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N substrate is characterized in that the number of particles of ≥0.2 μm diameter existing on the surface of the substrate is ≤20 pieces when the aperture of the substrate is 2 inches. This Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N substrate is also characterized in that the ratio (peak area of C<SB>1s</SB>electron/peak area of N<SB>1s</SB>electron) of the peak area of C<SB>1s</SB>electron to the peak area of N<SB>1s</SB>electron is ≤3 in the photoelectron spectrum on the surface of the substrate by an X-ray photoelectron spectroscopy at 10°detection angle. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate and an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y). ≦ 1, x + y ≦ 1) It relates to a substrate cleaning method.

An Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate can be suitably used as a substrate for semiconductor devices such as various optical devices and electronic devices. In the present specification, Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) may be abbreviated as Al x Ga y In 1-xy N.

Al x Ga y In a typical growth process of 1-xy N crystal has HVPE (Hydride Vapor Phase Epitaxy) method, Al x Ga y In 1-xy N substrate, the Al x Ga y In 1-xy N It can be produced from crystals. Semiconductor devices such as optical devices and electronic devices can be obtained by growing various epitaxial films on the surface of the Al x Ga y In 1 -xy N substrate. For example, Non-Patent Document 1 discloses a light-emitting diode obtained by growing an AlGaN film or the like on an AlN substrate. Non-Patent Document 2 discloses a light emitting diode formed on a bulk AlN substrate.

However, when an epitaxial film is grown on the surface of the Al x Ga y In 1 -xy N substrate, a low-quality epitaxial film with many defects and cloudiness may grow. Since the semiconductor device using such a low-quality epitaxial film has poor device characteristics, it is desired to stably grow a high-quality epitaxial film with few defects and cloudiness.
Toshio Nishida et al., "GaN-free transparent ultraviolet light-emitting diodes", 2003, Appl. Phys. Lett., Vol.82, 1299 Toshio Nishida et al., "High Current Injection Characteristics of UV-LEDs Formed on Bulk AlN Substrate", Proceedings of the 51st Joint Conference on Applied Physics, March 2004, p. 409

Therefore, in order to stably grow a high-quality epitaxial film with few defects and cloudiness, particles and organic substances adhering to the surface of the Al x Ga y In 1-xy N substrate are removed by washing. . However, there is no prior art document that mentions the degree of removal of particles and organic substances existing on the surface of the Al x Ga y In 1-xy N substrate, and the criteria are unclear. Therefore, Al x Ga y In 1 There is a problem that the variation in the surface state of the -xy N substrate directly leads to the variation in the quality of the epitaxial film.

An object of the present invention, provides a cleaning method for the Al x Ga y In 1-xy N substrate a high-quality epitaxial films can be grown stably obtain the Al x Ga y In 1-xy N substrate There is to do.

The present invention, when the Al x Ga y In 1-xy N number of particles or particle size 0.2μm present on the surface of the substrate was 2 inches diameter of Al x Ga y In 1-xy N substrate a Al x Ga y in 1-xy N substrate is 20 or less. Here, in this specification, the Al x Ga y In 1-xy N substrate is a nitride crystal substrate containing aluminum (Al), and in addition to aluminum and nitrogen, gallium (Ga) and / or Indium (In) may be included.

Further, the present invention is, Al x Ga y In 1- xy N substrate ammonia water, applying ultrasonic waves to any one of the cleaning liquid hydrogen peroxide added ammonia water and selected from the group consisting of an organic alkaline aqueous solution by dipping while, and the Al x Ga y in 1-xy N the number of particles or particle size 0.2μm present on the surface of the substrate Al x Ga y in 1-xy N diameter of the substrate and two inches This is a method for cleaning an Al x Ga y In 1-xy N substrate, sometimes 20 or less.

Here, in the method for cleaning an Al x Ga y In 1-xy N substrate of the present invention, the cleaning liquid is ammonia water having an ammonia concentration of 0.5% by mass or more, and hydrogen peroxide water concentration is 0.1% by mass. It is preferable to use either hydrogen peroxide added ammonia water having an ammonia concentration of 0.1% by mass or more or an organic alkali aqueous solution having an organic alkali concentration of 0.5% by mass or more.

Further, dissolved in Al x Ga y In 1-xy N substrate cleaning method of the present invention, an organic alkaline aqueous solution, either organic alkali tetramethylammonium hydroxide or 2-hydroxyethyl trimethyl ammonium hydroxide in water It is preferred that

In the method for cleaning an Al x Ga y In 1 -xy N substrate of the present invention, the immersion time of the Al x Ga y In 1 -xy N substrate is preferably 30 seconds or more.

The present invention also detects the angle at 10 photoelectron spectra of Al x Ga y In 1-xy N substrate surface by X-ray photoelectron spectroscopy with a °, C 1s electrons and N 1s ratio of electron peak area (C 1s peak area of the electron peak area / N 1s electron) is Al x Ga y in 1-xy N substrate is 3 or less.

Furthermore, the present invention provides a method for immersing an Al x Ga y In 1 -xy N substrate in an acid solution so that the surface of the Al x Ga y In 1 -xy N substrate is measured by X-ray photoelectron spectroscopy at a detection angle of 10 °. in photoelectron spectrum in C 1s electrons and N 1s electron Al x Ga y in 1-xy N substrate cleaning method of the ratio (peak area of C 1s electron peak area / N 1s electron) to 3 or less of the peak area is there.

Here, in the method for cleaning an Al x Ga y In 1-xy N substrate of the present invention, the acid solution is composed of at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid, or hydrofluoric acid, hydrochloric acid and sulfuric acid. It is preferably composed of any one of a mixed solution of at least one selected from the group and hydrogen peroxide solution.

In the method for cleaning an Al x Ga y In 1-xy N substrate of the present invention, when the acid solution is at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid, the fluorine in the acid solution is used. When the total concentration of acid, hydrochloric acid and sulfuric acid is 0.5% by mass or more, and the acid solution is a mixture of hydrogen peroxide and at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid The total concentration of hydrofluoric acid, hydrochloric acid and sulfuric acid in the acid solution is preferably 0.1% by mass or more, and the concentration of the hydrogen peroxide solution is preferably 0.1% by mass or more.

In the method for cleaning an Al x Ga y In 1 -xy N substrate of the present invention, the immersion time of the Al x Ga y In 1 -xy N substrate is preferably 30 seconds or more.

According to the present invention, an Al x Ga y In 1 -xy N substrate capable of stably growing a high-quality epitaxial film and a cleaning method for obtaining the Al x Ga y In 1 -xy N substrate are provided. can do.

  Embodiments of the present invention will be described below. In the drawings of the present application, the same reference numerals represent the same or corresponding parts.

The present invention, when the Al x Ga y In 1-xy N number of particles or particle size 0.2μm present on the surface of the substrate was 2 inches diameter of Al x Ga y In 1-xy N substrate a Al x Ga y in 1-xy N substrate is 20 or less. As a result of intensive studies by the inventor, the number of particles having a particle diameter of 0.2 μm or more on the surface of the Al x Ga y In 1-xy N substrate is controlled as described above. It has been found that a high-quality epitaxial film with a small number can be grown.

Here, Al x Ga y In the number of particles on the surface of the 1-xy N substrate, Al x Ga y In 1- xy N counts all the particle size 0.2μm or more particles present in the entire surface of the substrate The calculated number of particles is converted into a value when it is assumed that the aperture of the Al x Ga y In 1-xy N substrate is 2 inches. Therefore, in the present invention, the size of the Al x Ga y In 1-xy N substrate is not limited. For example, since the diameter is four times 4 inch Al x Ga y In 1-xy N area of the surface of the substrate diameter is the case of two inches of caliber 4 inches Al x Ga y In 1-xy N When a substrate is used, the number of particles here is 1/4 times the total number of particles present on the surface. The particles are counted using a conventionally known light scattering type substrate surface inspection apparatus or the like. Further, the material of the particles is not particularly limited.

Further, the present invention is, Al x Ga y In 1- xy N substrate ammonia water, applying ultrasonic waves to any one of the cleaning liquid hydrogen peroxide added ammonia water and selected from the group consisting of an organic alkaline aqueous solution by dipping while, and the Al x Ga y in 1-xy N the number of particles or particle size 0.2μm present on the surface of the substrate Al x Ga y in 1-xy N diameter of the substrate and two inches It is a cleaning method that sometimes uses 20 or less.

  Here, the hydrogen peroxide-added ammonia water is a mixed liquid of hydrogen peroxide water and ammonia water, and is not limited to a mixed liquid obtained by adding hydrogen peroxide water to ammonia water. The organic alkali aqueous solution is an organic alkali dissolved in water, and the organic alkali is represented by tetramethylammonium hydroxide represented by the following structural formula (1) or the following structural formula (2). It is preferable to use any of 2-hydroxyethyltrimethylammonium hydroxide.

Further, when ammonia water is used as the cleaning liquid, the ammonia concentration with respect to the entire cleaning liquid is preferably 0.5% by mass or more. Further, in the case of using hydrogen peroxide-added ammonia water as the cleaning liquid, it is preferable that the concentration of hydrogen peroxide water with respect to the entire cleaning liquid is 0.1% by mass or more and the ammonia concentration is 0.1% by mass or more. Furthermore, when an organic alkali aqueous solution is used as the cleaning liquid, the organic alkali concentration with respect to the entire cleaning liquid is preferably 0.5% by mass or more. By defining the concentration of the cleaning solution in this way, the number of particles on the surface of the Al x Ga y In 1 -xy N substrate tends to be controlled more stably as described above.

Further, it is preferable that Al x Ga y In 1-xy N immersion time of the substrate into the cleaning solution is 30 seconds or more. In this case, since the Al x Ga y In 1-xy N substrate is sufficiently immersed in the cleaning liquid, the number of particles on the surface of the Al x Ga y In 1-xy N substrate can be more stably increased. Tend to be able to be controlled. Here, the immersion time of the Al x Ga y In 1 -xy N substrate is a time from the time when the ultrasonic wave is applied to the cleaning liquid.

Furthermore, the present invention is the detection angle 10 X-ray photoelectron spectroscopy with a ° in the photoelectron spectrum of Al x Ga y In 1-xy N substrate surface by (XPS), the ratio of the peak area of C 1s electrons and N 1s electron (peak area of C 1s electron peak area / N 1s electron) is Al x Ga y in 1-xy N substrate is 3 or less. This is a result of the present inventors have conducted extensive studies, the detection angle in the photoelectron spectrum of Al x Ga y In 1-xy N substrate surface by X-ray photoelectron spectroscopy at 10 °, C 1s electron peak area and N 1s It has been found that when the ratio to the peak area of electrons is controlled as described above, a high-quality epitaxial film without cloudiness can be grown. The ratio of C 1s electrons and N 1s electron peak area in the photoelectron spectrum of the detected angle 10 ° X-ray photoelectron spectroscopy with a by (XPS) Al x Ga y In 1-xy N substrate surface, Al x Ga y in 1-xy N indicates the amount of organic matter on the surface of the Al x Ga y in 1-xy N substrate to nitrogen near the surface of the substrate, no haze by controlling the ratio as described above A high quality epitaxial film can be grown.

Here, C 1s electrons are Cs (carbon) 1s orbital electrons, and N 1s electrons are N (nitrogen) 1s orbital electrons. Then, as shown in FIG. 1, the C 1s electrons and N 1s electrons on the surface of the Al x Ga y In 1 -xy N substrate 5 are emitted as photoelectrons 7 by irradiation with X-rays 6. Thereafter, the photoelectrons 7 emitted at an angle of 10 ° with the surface of the Al x Ga y In 1-xy N substrate 5 are detected by the detector 8 (detection angle 10 °), and a photoelectron spectrum is obtained. . The ratio between the peak area of C 1s electrons and the peak area of N 1s electrons in this photoelectron spectrum is determined.

The present invention also provides a method for immersing an Al x Ga y In 1 -xy N substrate in an acid solution so that the surface of the Al x Ga y In 1 -xy N substrate is detected by X-ray photoelectron spectroscopy at a detection angle of 10 °. In the photoelectron spectrum, this is a cleaning method in which the ratio of the peak area of C 1s electrons to N 1s electrons (C 1s electron peak area / N 1s electron peak area) is 3 or less.

Here, the acid solution is preferably at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid, and sulfuric acid. Moreover, it is preferable that an acid solution consists of at least 1 sort (s) selected from the group which consists of a hydrofluoric acid, hydrochloric acid, and a sulfuric acid, and hydrogen peroxide water. In this case, the ratio of the C 1s electron peak area to the N 1s electron peak area tends to be 3 or less.

Further, when the acid solution is made of at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid, the total concentration of hydrofluoric acid, hydrochloric acid and sulfuric acid in the acid solution may be 0.5% by mass or more. preferable. When the acid solution is composed of a mixture of at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid and hydrogen peroxide, the total concentration of hydrofluoric acid, hydrochloric acid and sulfuric acid in the acid solution is 0. It is preferable that the concentration of hydrogen peroxide is 0.1% by mass or more. In this case, the ratio of the peak area of the C 1s electrons to the peak area of the N 1s electrons tends to be 3 or less.

Further, it is preferable that Al x Ga y In 1-xy N immersion time in the acid solution of the substrate is also more than 30 seconds. In this case, since the Al x Ga y In 1-xy N substrate can be sufficiently immersed in the acid solution, the ratio between the peak area of the C 1s electrons and the peak area of the N 1s electrons is more stable. Tend to be controlled as described above.

(Experimental example 1)
First, 50 AlN substrates having a diameter of 2 inches were prepared by mirror-polishing the AlN crystal grown by the HVPE method and then removing the damaged layer by the mirror-polishing. Here, the 50 AlN substrates each have a thickness of 400 μm, and the surface of the AlN substrate is a surface that is 2 ° off from the orientation (0001).

  Next, using the cleaning apparatus shown in the schematic cross-sectional view of FIG. 2, the 50 AlN substrates were cleaned while changing the immersion time. Here, various concentrations of tetramethylammonium hydroxide aqueous solutions were accommodated in the cleaning tank 1 shown in FIG. Further, the ultrasonic wave 3 having a frequency of 900 kHz was applied to the cleaning liquid 2 in which the AlN substrate 4 was immersed under the same conditions for each of the 50 AlN substrates 4.

  For each cleaned AlN substrate, the number of particles having a particle size of 0.2 μm or more present on the surface of the AlN substrate was counted by a light scattering type substrate surface inspection apparatus.

  Thereafter, an epitaxial film made of AlN crystal having a thickness of 1 μm was grown on each surface of 50 AlN substrates by the MOVPE method (metal organic vapor phase epitaxy) under the same conditions. The number of defects in the epitaxial film was counted using the same light scattering substrate surface inspection apparatus as described above.

  FIG. 3 shows the results of this experiment. In FIG. 3, the horizontal axis indicates the number of particles having a particle diameter of 0.2 μm or more present on the surface of the cleaned AlN substrate counted as described above, and the vertical axis corresponds to the number of particles on the horizontal axis. 3 shows the number of defects counted for an epitaxial film grown on the surface of an AlN substrate.

  As can be seen from FIG. 3, when the number of particles having a particle diameter of 0.2 μm or more present on the surface of an AlN substrate having a diameter of 2 inches is set to 20 or less, the number of defects in the epitaxial film grown on the surface is reduced. The number of particles was less than 50, and a high-quality epitaxial film with fewer defects was obtained compared with the case where the number of particles was more than 20.

  In addition, an AlN substrate having 20 or less particles having a particle diameter of 0.2 μm or more present on the surface has a tetramethylammonium hydroxide concentration of 0.5 mass% or more with respect to the entire cleaning liquid, and the AlN substrate is immersed in the AlN substrate. It was washed for 30 seconds or more.

In the above Example 1 but using AlN substrate, similar results even when a Al x Ga y In 1-xy N substrates other than the AlN substrate can be obtained. Further, the thickness and the plane orientation of the AlN substrate are not limited to the above, and the same result as in Experimental Example 1 can be obtained in any case.

(Experimental example 2)
First, in the same manner as in Experimental Example 1, 50 AlN substrates having a diameter of 2 inches obtained by mirror-polishing an AlN crystal and removing a damaged layer by mirror polishing were prepared. Here, the 50 AlN substrates each have a thickness of 400 μm, and the surface of the AlN substrate is a surface that is 2 ° off from the orientation (0001).

  Next, using the cleaning apparatus shown in the schematic cross-sectional view of FIG. 4, the 50 AlN substrates were cleaned while varying the immersion time. Here, various concentrations of hydrochloric acid were accommodated as the acid solution 2a in the cleaning tank 1 shown in FIG. 4, and the AlN substrate 4 was immersed in the acid solution 2a.

Then, with respect to each cleaned AlN substrate, the photoelectron spectrum of the surface of the AlN substrate at a photoelectron detection angle of 10 ° is measured by an X-ray photoelectron spectrometer using Mg Kα ray as an X-ray source, and C 1s electrons The ratio of the peak area of N 1 and the peak area of N 1s electrons (C 1s electron peak area / N 1s electron peak area) was calculated.

Thereafter, an epitaxial film made of AlN crystal having a thickness of 1 μm was grown on each surface of 50 AlN substrates by the MOVPE method under the same conditions. Each grown epitaxial film was visually evaluated for the presence or absence of clouding according to the following criteria, and the epitaxial film with clouding was shown in Table 1 (peak area of C 1s electrons / peak area of N 1s electrons). Counted for each category. The results are shown in Table 1.

<Evaluation criteria for occurrence of cloudiness>
Clouding is generated ... There is a portion where the epitaxial film is not mirrored. No clouding is generated ... The epitaxial film is entirely mirrored. As can be seen from Table 1, the peak area of C 1s electrons on the surface of the AlN substrate and As the ratio to the peak area of 1 s electrons (C 1 s electron peak area / N 1 s electron peak area) is smaller, there is a tendency that the occurrence of cloudiness in the epitaxial film is eliminated. In particular, when the ratio was 3 or less, no fogging of the epitaxial film occurred and a high quality epitaxial film could be grown.

An AlN substrate having a ratio of the peak area of C 1s electrons to the peak area of N 1s electrons (peak area of C 1s electrons / peak area of N 1s electrons) of 3 or less on the surface of the AlN substrate is based on the entire cleaning liquid. The substrate was cleaned with a hydrochloric acid concentration of 0.5 mass% or more and an immersion time of the AlN substrate of 30 seconds or more.

In the above Experiment 2 was used AlN substrate, similar results even when a Al x Ga y In 1-xy N substrates other than the AlN substrate can be obtained. Further, the thickness and the plane orientation of the AlN substrate are not limited to the above, and the same result as in Experimental Example 1 can be obtained in any case.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

The present invention can be suitably used for manufacturing a semiconductor device using an Al x Ga y In 1-xy N substrate.

It is the schematic diagram used in order to demonstrate an example of the X-ray photoelectron spectroscopy in a detection angle of 10 degrees in this invention. 4 is a schematic cross-sectional view of a cleaning device used in Experimental Example 1. FIG. It is the figure which showed the relationship between the number of the particles in Experimental example 1, and the number of defects of the epitaxial film grown on the surface of the AlN substrate. It is typical sectional drawing of the washing | cleaning apparatus used in Experimental example 2. FIG.

Explanation of symbols

1 cleaning tank 2 cleaning liquid, 2a acid solution, 3 ultrasound, 4 AlN substrate, 5 Al x Ga y In 1 -xy N substrate, 6 X-ray, 7 optoelectronic, 8 detector.

Claims (10)

  1. Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) The number of particles having a particle size of 0.2 μm or more present on the surface of the substrate is the Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) Al x Ga y In 1-xy , characterized in that the number of substrates is 20 or less when the diameter is 2 inches. N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate.
  2. Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) Any one selected from the group consisting of aqueous ammonia, aqueous hydrogen peroxide solution and organic alkaline solution Existing on the surface of the Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate by immersing in one type of cleaning liquid while applying ultrasonic waves The number of particles having a particle size of 0.2 μm or more is 20 when the aperture of the Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate is 2 inches. A method for cleaning an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate, characterized in that the number is less than or equal to one.
  3. As the cleaning liquid, ammonia water having an ammonia concentration of 0.5% by mass or more, hydrogen peroxide solution-added ammonia having an aqueous hydrogen peroxide concentration of 0.1% by mass or more and an ammonia concentration of 0.1% by mass or more Either of water or an organic alkali aqueous solution having an organic alkali concentration of 0.5% by mass or more is used. The Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) Substrate cleaning method.
  4. 4. The organic alkali aqueous solution according to claim 2, wherein either one of tetramethylammonium hydroxide and 2-hydroxyethyltrimethylammonium hydroxide is dissolved in water. 5. A method for cleaning an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate.
  5. 5. The dipping time of the Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate is 30 seconds or more, 5. A method for cleaning an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate.
  6. In the photoelectron spectrum of the surface of an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate by X-ray photoelectron spectroscopy at a detection angle of 10 °, C 1s electrons and wherein the ratio of the peak area of N 1s electron (peak area of C 1s electron peak area / N 1s electron) is 3 or less, Al x Ga y in 1- xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate.
  7. Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate is immersed in an acid solution to obtain Al x by X-ray photoelectron spectroscopy at a detection angle of 10 °. Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) In the photoelectron spectrum of the surface of the substrate, the ratio of the peak area of C 1s electrons to N 1s electrons (peak of C 1s electrons) Area / N 1s electron peak area) is 3 or less, and a method of cleaning an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate .
  8. The acid solution is at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid, or at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid and a mixed solution of hydrogen peroxide. The method for cleaning an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate according to claim 7, wherein:
  9. When the acid solution is at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid, the total concentration of hydrofluoric acid, hydrochloric acid and sulfuric acid in the acid solution is 0.5% by mass or more, When the acid solution is composed of a mixture of at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid and sulfuric acid and hydrogen peroxide, the total concentration of hydrofluoric acid, hydrochloric acid and sulfuric acid in the acid solution is 0.00. The Al x Ga y In 1-xy N (0 <x ≦ 1, wherein the concentration of the hydrogen peroxide solution is 1% by mass or more and the concentration of the hydrogen peroxide solution is 0.1% by mass or more. 0 ≦ y ≦ 1, x + y ≦ 1) Substrate cleaning method.
  10. The immersion time of the Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate is 30 seconds or more, wherein any one of claims 7 to 9 A method for cleaning an Al x Ga y In 1-xy N (0 <x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1) substrate.
JP2004195506A 2004-07-01 2004-07-01 AlxXGayIn1-x-yN SUBSTRATE AND CLEANING METHOD FOR THE SAME Pending JP2006016249A (en)

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JP2004195506A JP2006016249A (en) 2004-07-01 2004-07-01 AlxXGayIn1-x-yN SUBSTRATE AND CLEANING METHOD FOR THE SAME
TW94118827A TWI408263B (en) 2004-07-01 2005-06-07 Alxgayin1-x-yn substrate, cleaning method of alxgayin1-x-yn substrate, aln substrate, and cleaning method of aln substrate
US11/148,239 US7387989B2 (en) 2004-07-01 2005-06-09 AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate
EP10003590.6A EP2204479B1 (en) 2004-07-01 2005-06-28 Method for cleaning AlGaInN and AlN substrates
EP20050013957 EP1612301B1 (en) 2004-07-01 2005-06-28 AlN substrates and method for cleaning them
EP10003588.0A EP2204478B1 (en) 2004-07-01 2005-06-28 AlN substrates and method for cleaning them
KR20050057522A KR101188516B1 (en) 2004-07-01 2005-06-30 Al(x)g a(y)i substrate and cleaning method of al(x)g a(y)i substrate
CN2008101306254A CN101312165B (en) 2004-07-01 2005-07-01 A1N substrate and cleaning method for the same
CNB2005100821926A CN100411111C (en) 2004-07-01 2005-07-01 Alxgayin1-x-yn substrate, cleaning method of alxgayin1-x-yn substrate, ain substrate, and cleaning method of AlN substrate
CN2008101306220A CN101312164B (en) 2004-07-01 2005-07-01 Alxgayin1-x-yn substrate and cleaning method for the same, and AIN substrate and cleaning method for the same
US12/149,776 US20080299375A1 (en) 2004-07-01 2008-05-08 ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate
KR1020110097166A KR101239545B1 (en) 2004-07-01 2011-09-26 Al(x)Ga(y)In(1-x-y)N SUBSTRATE, CLEANING METHOD OF Al(x)Ga(y)In(1-x-y)N SUBSTRATE, AlN SUBSTRATE, AND CLEANING METHOD OF AlN SUBSTRATE

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JP2008303086A (en) * 2007-06-05 2008-12-18 Sumitomo Electric Ind Ltd Method for growing nitride semiconductor crystal and nitride semiconductor crystal substrate
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WO2008018237A1 (en) * 2006-08-07 2008-02-14 Sumitomo Electric Industries, Ltd. GaxIn1-xN SUBSTRATE AND GaxIn1-xN SUBSTRATE CLEANING METHOD
JP2008303086A (en) * 2007-06-05 2008-12-18 Sumitomo Electric Ind Ltd Method for growing nitride semiconductor crystal and nitride semiconductor crystal substrate
WO2018066289A1 (en) * 2016-10-03 2018-04-12 Jsr株式会社 Semiconductor element substrate, etching method, and etching solution
WO2018216440A1 (en) * 2017-05-26 2018-11-29 住友電気工業株式会社 Group iii–v compound semiconductor substrate and group iii–v compound semiconductor substrate with epitaxial layer
JP6477990B1 (en) * 2017-05-26 2019-03-06 住友電気工業株式会社 III-V compound semiconductor substrate and III-V compound semiconductor substrate with epitaxial layer

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