JP2005520346A - 画素センサーのアレーとその製造方法 - Google Patents

画素センサーのアレーとその製造方法 Download PDF

Info

Publication number
JP2005520346A
JP2005520346A JP2003581263A JP2003581263A JP2005520346A JP 2005520346 A JP2005520346 A JP 2005520346A JP 2003581263 A JP2003581263 A JP 2003581263A JP 2003581263 A JP2003581263 A JP 2003581263A JP 2005520346 A JP2005520346 A JP 2005520346A
Authority
JP
Japan
Prior art keywords
wafer
sensor
terminal node
conductive
sensor input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003581263A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005520346A5 (https=
Inventor
ニガルド，エイナル
Original Assignee
インテロン・エイエス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IL148463A external-priority patent/IL148463A/en
Priority claimed from IL15086702A external-priority patent/IL150867A0/xx
Application filed by インテロン・エイエス filed Critical インテロン・エイエス
Publication of JP2005520346A publication Critical patent/JP2005520346A/ja
Publication of JP2005520346A5 publication Critical patent/JP2005520346A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP2003581263A 2002-03-03 2003-02-18 画素センサーのアレーとその製造方法 Pending JP2005520346A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IL148463 2002-03-03
IL148463A IL148463A (en) 2002-03-03 2002-03-03 Pixel sensor array and method of manufacture thereof
IL150867 2002-07-23
IL15086702A IL150867A0 (en) 2002-07-23 2002-07-23 Pixel sensor array and method of manufacture thereof
PCT/IL2003/000125 WO2003083944A1 (en) 2002-03-03 2003-02-18 Pixel sensor array and method of manufacture thereof

Publications (2)

Publication Number Publication Date
JP2005520346A true JP2005520346A (ja) 2005-07-07
JP2005520346A5 JP2005520346A5 (https=) 2006-05-25

Family

ID=28676547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003581263A Pending JP2005520346A (ja) 2002-03-03 2003-02-18 画素センサーのアレーとその製造方法

Country Status (7)

Country Link
US (1) US7132637B2 (https=)
EP (1) EP1483790B1 (https=)
JP (1) JP2005520346A (https=)
AT (1) ATE338345T1 (https=)
AU (1) AU2003209622A1 (https=)
DE (1) DE60307994T2 (https=)
WO (1) WO2003083944A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179345A (ja) * 2002-11-26 2004-06-24 Fujitsu Ltd 半導体用基板シート材及びその製造方法、及び基板シート材を用いたモールド方法及び半導体装置の製造方法
IL158345A0 (en) * 2003-10-09 2004-05-12 Interon As Pixel detector and method of manufacture and assembly thereof
GB2449853B (en) 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
EP2461347A1 (en) 2010-12-06 2012-06-06 Fei Company Detector system for transmission electron microscope
DE102011101835A1 (de) * 2011-05-16 2012-11-22 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
WO2013068912A1 (en) * 2011-11-08 2013-05-16 Koninklijke Philips Electronics N.V. Seamless tiling to build a large detector
US9357972B2 (en) 2012-07-17 2016-06-07 Cyber Medical Imaging, Inc. Intraoral radiographic sensors with cables having increased user comfort and methods of using the same
DE102013206407B3 (de) * 2013-04-11 2014-03-06 Siemens Aktiengesellschaft Sensorchip, computertomographischer Detektor diesen aufweisend und Herstellungsverfahren dafür
DE102013206404B3 (de) * 2013-04-11 2014-03-06 Siemens Aktiengesellschaft Sensorchip, computertomographischer Detektor diesen aufweisend, sowie ein Herstellungsverfahren und ein Betriebsverfahren dafür
US11335721B2 (en) * 2013-11-06 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor device with shielding layer
WO2018191725A1 (en) * 2017-04-14 2018-10-18 Paradromics, Inc. Low-area, low-power neural recording circuit, and method of training the same
US12019035B2 (en) 2021-07-16 2024-06-25 Rapiscan Holdings, Inc. Material detection in x-ray security screening

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321859U (https=) * 1989-07-12 1991-03-05
JPH08316450A (ja) * 1995-05-17 1996-11-29 Hitachi Ltd 積層型固体撮像素子及びその製造方法
JP2000022120A (ja) * 1998-04-27 2000-01-21 Sharp Corp 二次元画像検出器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020080A (en) * 1974-07-01 1977-04-26 Eastman Kodak Company Oxadiazolylphenyl aromatic ester compounds and their use as ultraviolet stabilizer in organic compositions
US4104674A (en) * 1977-02-07 1978-08-01 Honeywell Inc. Double sided hybrid mosaic focal plane
US4547792A (en) 1980-06-19 1985-10-15 Rockwell International Corporation Selective access array integrated circuit
JPS61128564A (ja) 1984-11-28 1986-06-16 Fujitsu Ltd 半導体装置
DE3633181C2 (de) * 1986-09-30 1998-12-10 Siemens Ag Reflexlichtschranke
DE69013104T2 (de) 1989-07-29 1995-03-23 Shimadzu Corp., Kyoto Halbleiterstrahlungsbilddetektor und sein Herstellungsverfahren.
JP3077034B2 (ja) * 1990-07-25 2000-08-14 セイコーインスツルメンツ株式会社 半導体イメージセンサ装置
JPH05110048A (ja) 1991-10-14 1993-04-30 Mitsubishi Electric Corp 光−電子集積回路
US5734201A (en) * 1993-11-09 1998-03-31 Motorola, Inc. Low profile semiconductor device with like-sized chip and mounting substrate
BR9510290A (pt) * 1994-12-23 1997-11-11 Digirad Câmera de raios gama semicondutores e sistema médico de formação de imagens
US5998292A (en) * 1997-11-12 1999-12-07 International Business Machines Corporation Method for making three dimensional circuit integration
US6586812B1 (en) * 1999-04-13 2003-07-01 Agilent Technologies, Inc. Isolation of alpha silicon diode sensors through ion implantation
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6852566B2 (en) * 2003-03-12 2005-02-08 Taiwan Semiconductor Manufacturing Co., Ltd Self-aligned rear electrode for diode array element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321859U (https=) * 1989-07-12 1991-03-05
JPH08316450A (ja) * 1995-05-17 1996-11-29 Hitachi Ltd 積層型固体撮像素子及びその製造方法
JP2000022120A (ja) * 1998-04-27 2000-01-21 Sharp Corp 二次元画像検出器

Also Published As

Publication number Publication date
US7132637B2 (en) 2006-11-07
US20050121598A1 (en) 2005-06-09
EP1483790A1 (en) 2004-12-08
ATE338345T1 (de) 2006-09-15
WO2003083944A1 (en) 2003-10-09
AU2003209622A1 (en) 2003-10-13
DE60307994D1 (de) 2006-10-12
DE60307994T2 (de) 2007-05-10
EP1483790B1 (en) 2006-08-30

Similar Documents

Publication Publication Date Title
CN100385673C (zh) 检测器
US7230247B2 (en) Detector
US8497483B2 (en) Circuit substrate and method
TWI492336B (zh) 用於影像感測器之階式封裝體及其製造方法
EP1459384B1 (en) Sensor arrangement consisting of light-sensitive and/or x-ray sensitive sensors
JPS59134989A (ja) 撮像装置の焦点面配列体
US11682745B2 (en) Photon detector array assembly
JP2005520346A (ja) 画素センサーのアレーとその製造方法
US20230223411A1 (en) Imaging apparatus
KR101343733B1 (ko) 광 검출 시스템, 와이드 밴드갭 반도체 초점판 어레이 모듈및 실리콘 탄화물 픽셀 어레이 제조방법
WO2022149362A1 (ja) 固体撮像装置及び電子機器
WO1998057376A1 (en) Interconnection technique for hybrid integrated devices
US7388185B2 (en) Pixel detector and method of manufacture and assembly thereof
EP2863438B1 (en) Manufacturing method for solid-state imaging device and solid-state imaging device
EP2665096B1 (en) A method of wafer-scale integration of semiconductor devices and semiconductor device
JP7071491B2 (ja) 電磁放射線を検出するための組立体及び電磁放射線を検出するための組立体の製造方法
IL148463A (en) Pixel sensor array and method of manufacture thereof
WO2004047177A1 (ja) 半導体集積装置及びその製造方法
JPS59112652A (ja) 半導体撮像装置
TW201351624A (zh) 固體攝像裝置之製造方法及固體攝像裝置
JP2754969B2 (ja) バンプ形成領域を有する半導体装置
JPH07321367A (ja) 赤外線検知装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060216

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060316

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091001

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100406

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100914