JP2005509746A - 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法 - Google Patents

導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法 Download PDF

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Publication number
JP2005509746A
JP2005509746A JP2003544243A JP2003544243A JP2005509746A JP 2005509746 A JP2005509746 A JP 2005509746A JP 2003544243 A JP2003544243 A JP 2003544243A JP 2003544243 A JP2003544243 A JP 2003544243A JP 2005509746 A JP2005509746 A JP 2005509746A
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Japan
Prior art keywords
wafer
nozzle
electrolyte fluid
electropolishing
fluid
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JP2003544243A
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English (en)
Japanese (ja)
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JP2005509746A5 (https=
Inventor
ワン，フイ
イー，ペイハウア
アフナン，ムハメド
ナッチ，ボハ
ガットマン，フェリックス
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エーシーエム リサーチ，インコーポレイティド
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Publication of JP2005509746A publication Critical patent/JP2005509746A/ja
Publication of JP2005509746A5 publication Critical patent/JP2005509746A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2003544243A 2001-11-13 2002-11-13 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法 Pending JP2005509746A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33241701P 2001-11-13 2001-11-13
US37256702P 2002-04-14 2002-04-14
PCT/US2002/036567 WO2003042433A1 (en) 2001-11-13 2002-11-13 Electropolishing assembly and methods for electropolishing conductive layers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006165966A Division JP2006291361A (ja) 2001-11-13 2006-06-15 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法

Publications (2)

Publication Number Publication Date
JP2005509746A true JP2005509746A (ja) 2005-04-14
JP2005509746A5 JP2005509746A5 (https=) 2006-01-12

Family

ID=26988208

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2003544243A Pending JP2005509746A (ja) 2001-11-13 2002-11-13 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法
JP2006165966A Pending JP2006291361A (ja) 2001-11-13 2006-06-15 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法
JP2006190757A Pending JP2006316352A (ja) 2001-11-13 2006-07-11 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法
JP2006227781A Pending JP2007016320A (ja) 2001-11-13 2006-08-24 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法
JP2006282312A Pending JP2007051376A (ja) 2001-11-13 2006-10-17 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法

Family Applications After (4)

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JP2006165966A Pending JP2006291361A (ja) 2001-11-13 2006-06-15 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法
JP2006190757A Pending JP2006316352A (ja) 2001-11-13 2006-07-11 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法
JP2006227781A Pending JP2007016320A (ja) 2001-11-13 2006-08-24 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法
JP2006282312A Pending JP2007051376A (ja) 2001-11-13 2006-10-17 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法

Country Status (8)

Country Link
US (1) US20040238481A1 (https=)
EP (1) EP1446514A4 (https=)
JP (5) JP2005509746A (https=)
KR (1) KR20050044404A (https=)
CN (1) CN100497748C (https=)
CA (1) CA2464423A1 (https=)
TW (1) TWI275452B (https=)
WO (1) WO2003042433A1 (https=)

Cited By (4)

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JP2007517218A (ja) * 2003-12-30 2007-06-28 ラム　リサーチ　コーポレーション 結合型渦電流センサによって膜厚を測定するための方法および装置
JP2016522860A (ja) * 2013-05-09 2016-08-04 エーシーエム リサーチ （シャンハイ） インコーポレーテッド ウェハのメッキおよび／または研磨のための装置および方法
JP2017166072A (ja) * 2017-05-15 2017-09-21 エーシーエム リサーチ （シャンハイ） インコーポレーテッド ウェハのメッキおよび／または研磨のための装置および方法
JP2023528977A (ja) * 2020-06-09 2023-07-06 エーシーエム リサーチ （シャンハイ） インコーポレーテッド バリア層除去方法

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JP2005082843A (ja) * 2003-09-05 2005-03-31 Ebara Corp 電解液管理方法及び管理装置
JP2005120464A (ja) * 2003-09-26 2005-05-12 Ebara Corp 電解加工装置及び電解加工方法
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US20070181441A1 (en) * 2005-10-14 2007-08-09 Applied Materials, Inc. Method and apparatus for electropolishing
JP5012252B2 (ja) 2007-06-25 2012-08-29 ヤマハ株式会社 磁気データ処理装置、方法およびプログラム
DE102007044091A1 (de) * 2007-09-14 2009-03-19 Extrude Hone Gmbh Verfahren und Vorrichtung zur elektochemischen Bearbeitung
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CN102601471B (zh) * 2012-03-28 2013-07-24 华南理工大学 一种空间曲线啮合齿轮机构的精加工方法
CN103590092B (zh) * 2012-08-16 2017-05-10 盛美半导体设备（上海）有限公司 一种电化学抛光/电镀装置及方法
TWI512851B (zh) * 2012-09-01 2015-12-11 萬國半導體股份有限公司 帶有厚底部基座的晶圓級封裝器件及其製備方法
CN105088328B (zh) * 2014-05-07 2018-11-06 盛美半导体设备（上海）有限公司 电化学抛光供液装置
TWI647343B (zh) * 2014-05-16 2019-01-11 盛美半導體設備（上海）有限公司 Apparatus and method for electroplating or electropolishing bracts
CN105316755B (zh) * 2014-07-29 2019-06-25 盛美半导体设备（上海）有限公司 电化学抛光设备
CN105312999A (zh) * 2014-07-29 2016-02-10 盛美半导体设备（上海）有限公司 无应力抛光设备及其工艺腔体
CN104241159B (zh) * 2014-09-19 2018-04-03 中海阳能源集团股份有限公司 太阳能发电支架液体镀层及测量一体装置
CN105448817B (zh) * 2014-09-29 2020-05-19 盛美半导体设备(上海)股份有限公司 一种电化学抛光金属互连晶圆结构的方法
CN106567130A (zh) * 2015-10-10 2017-04-19 盛美半导体设备（上海）有限公司 一种改善晶圆粗糙度的方法
CN105780101B (zh) * 2016-01-27 2018-06-26 杨继芳 一种新型电解抛光设备
CN105742213B (zh) * 2016-03-07 2019-03-12 京东方科技集团股份有限公司 湿法刻蚀设备及湿法刻蚀方法
US11110661B2 (en) * 2016-11-15 2021-09-07 Postprocess Technologies, Inc. Self-modifying process for rotational support structure removal in 3D printed parts using calibrated resonant frequency
CN106352782A (zh) * 2016-11-24 2017-01-25 中国航空工业集团公司金城南京机电液压工程研究中心 一种高温电涡流传感器及制作方法
CN106625033B (zh) * 2016-12-09 2018-12-18 天津津航技术物理研究所 一种确定单点金刚石车削刀痕抛光去除特性的方法
CN109423688B (zh) * 2017-08-31 2022-03-22 深圳市水佳鑫科技有限公司 电化学处理液循环系统及设备
CN111250805A (zh) * 2020-03-20 2020-06-09 南京航空航天大学 金属粗糙表面的飞行式电解铣削整平方法
CN111230727B (zh) * 2020-03-28 2024-08-02 苏州赛森电子科技有限公司 一种真空镀膜工艺中硅片单面抛光装置及单面抛光方法
CN111958478B (zh) * 2020-07-27 2024-06-18 浙江工业大学 基于氧化膜状态主动控制的轴承滚子elid研磨装置
JP7678125B2 (ja) 2021-03-04 2025-05-15 アプライド マテリアルズ インコーポレイテッド 化学機械研磨における絶縁流体ライン
CN114951858B (zh) * 2022-05-17 2024-05-10 哈尔滨工业大学 一种光纤激光与管电极电解复合用光电液耦合装置
CN117299666B (zh) * 2022-06-23 2025-10-17 盛美半导体设备(上海)股份有限公司 基板处理设备
GB202308117D0 (en) * 2023-05-31 2023-07-12 Holdson Ltd System and method for electrolyte flow control in electrochemical polishing apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007517218A (ja) * 2003-12-30 2007-06-28 ラム　リサーチ　コーポレーション 結合型渦電流センサによって膜厚を測定するための方法および装置
JP2016522860A (ja) * 2013-05-09 2016-08-04 エーシーエム リサーチ （シャンハイ） インコーポレーテッド ウェハのメッキおよび／または研磨のための装置および方法
JP2017166072A (ja) * 2017-05-15 2017-09-21 エーシーエム リサーチ （シャンハイ） インコーポレーテッド ウェハのメッキおよび／または研磨のための装置および方法
JP2023528977A (ja) * 2020-06-09 2023-07-06 エーシーエム リサーチ （シャンハイ） インコーポレーテッド バリア層除去方法
JP7678002B2 (ja) 2020-06-09 2025-05-15 エーシーエム リサーチ （シャンハイ） インコーポレーテッド バリア層除去方法

Also Published As

Publication number Publication date
EP1446514A1 (en) 2004-08-18
TWI275452B (en) 2007-03-11
KR20050044404A (ko) 2005-05-12
EP1446514A4 (en) 2007-11-28
CN1585835A (zh) 2005-02-23
JP2007016320A (ja) 2007-01-25
CA2464423A1 (en) 2003-05-22
US20040238481A1 (en) 2004-12-02
CN100497748C (zh) 2009-06-10
JP2006316352A (ja) 2006-11-24
JP2007051376A (ja) 2007-03-01
JP2006291361A (ja) 2006-10-26
TW200300376A (en) 2003-06-01
WO2003042433A1 (en) 2003-05-22

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