JP2005289797A5 - Method for producing nitride crystal - Google Patents
Method for producing nitride crystal Download PDFInfo
- Publication number
- JP2005289797A5 JP2005289797A5 JP2005066543A JP2005066543A JP2005289797A5 JP 2005289797 A5 JP2005289797 A5 JP 2005289797A5 JP 2005066543 A JP2005066543 A JP 2005066543A JP 2005066543 A JP2005066543 A JP 2005066543A JP 2005289797 A5 JP2005289797 A5 JP 2005289797A5
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- Prior art keywords
- reaction vessel
- pressure
- vessel
- nitride crystal
- resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 title claims description 17
- 239000002904 solvent Substances 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 8
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive Effects 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- 239000011800 void material Substances 0.000 claims 1
Description
すなわち、本発明の課題は、以下の窒化物結晶の製造方法により達成される。
（１）反応容器に原料とアンモニア溶媒を充填して前記反応容器を密閉した後、さらに前記反応容器を耐圧性容器内に挿入し、前記反応容器と前記耐圧性容器との間の空隙に第二溶媒を充填して前記耐圧性容器を密閉した後、昇温することにより窒化物結晶を得ることを特徴とする窒化物結晶の製造方法。
（２）少なくとも内側の表面が耐食性の反応容器に原料とアンモニア溶媒を充填して前記反応容器を密閉した後、さらに前記反応容器を耐圧性容器内に挿入し、前記反応容器と前記耐圧性容器との間の空隙に第二溶媒を充填して前記耐圧性容器を密閉した後、昇温することにより窒化物結晶を得ることを特徴とする窒化物結晶の製造方法。
（３）少なくとも内側の表面が貴金属製の反応容器に原料とアンモニア溶媒を充填して前記反応容器を密閉した後、さらに前記反応容器を耐圧性容器内に挿入し、前記反応容器と前記耐圧性容器との間の空隙に第二溶媒を充填して前記耐圧性容器を密閉した後、昇温することにより窒化物結晶を得ることを特徴とする窒化物結晶の製造方法。
（４）前記貴金属がＲｈ、Ｐｄ、Ａｇ、Ｉｒ、ＰｔおよびＡｕからなる群から選ばれる少なくとも１種類の貴金属を主成分とすることを特徴とする（３）に記載の製造方法。
（５）前記反応容器がＰｔまたはＰｔを含む合金を主成分とする容器であることを特徴とする（４）に記載の製造方法。
（６）前記反応容器が少なくともひとつのバルブを付属していることを特徴とする（１）〜（５）のいずれか一項に記載の製造方法。
（７）前記第二溶媒がアンモニア溶媒であることを特徴とする（１）〜（６）のいずれか一項に記載の製造方法。
（８）前記反応容器内のアンモニア溶媒を亜臨界状態または超臨界状態で保持することを特徴とする（１）〜（７）のいずれか一項に記載の製造方法。
（９）少なくとも前記耐圧性容器内を２０〜５００ＭＰａに保持することを特徴とする（１）〜（８）のいずれかの窒化物結晶の製造方法。
（１０）少なくとも前記耐圧性容器内を２００〜７００℃に昇温することを特徴とする（１）〜（９）のいずれか一項に記載の製造方法。
（１１）前記反応容器内に少なくとも１種類の添加物を添加することを特徴とする（１）〜（１０）のいずれか一項に記載の製造方法。
（１２）前記添加物が少なくとも１種類のハロゲン原子を含むことを特徴とする（１１）に記載の製造方法。
（１３）前記原料中の酸素含有量が５質量％以下であることを特徴とする（１）〜（１２）のいずれか一項に記載の製造方法。
（１４）前記原料中に窒化ガリウムを含有することを特徴とする（１）〜（１３）のいずれか一項に記載の製造方法。
（１５）前記反応容器内に少なくとも１種類の種結晶を設置し、アンモニア溶媒に溶解した原料が前記種結晶上に析出することを特徴とする（１）〜（１４）のいずれか一項に記載の窒化物結晶の製造方法。
That is, the object of the present invention is achieved by the following method for producing a nitride crystal.
(1) After filling the reaction vessel with a raw material and an ammonia solvent and sealing the reaction vessel, the reaction vessel is further inserted into the pressure-resistant vessel, and is inserted into the gap between the reaction vessel and the pressure-resistant vessel. A method for producing a nitride crystal, comprising filling a two-solvent and sealing the pressure-resistant container and then raising the temperature to obtain the nitride crystal.
(2) At least the inner surface is filled with a raw material and an ammonia solvent in a corrosion-resistant reaction vessel and the reaction vessel is sealed, and then the reaction vessel is inserted into the pressure-resistant vessel, and the reaction vessel and the pressure-resistant vessel A nitride crystal is obtained by filling a space between the second solvent and sealing the pressure-resistant container and then raising the temperature.
(3) At least the inner surface is filled with a raw material and an ammonia solvent in a reaction vessel made of a noble metal, and the reaction vessel is sealed. Then, the reaction vessel is further inserted into a pressure resistant vessel, and the reaction vessel and the pressure resistant property are sealed. A method for producing a nitride crystal, comprising filling a space between the container and a second solvent, sealing the pressure-resistant container, and then obtaining a nitride crystal by raising the temperature.
(4) The production method according to (3) , wherein the noble metal contains at least one kind of noble metal selected from the group consisting of Rh, Pd, Ag, Ir, Pt and Au as a main component.
(5) The manufacturing method according to (4) , wherein the reaction vessel is a vessel mainly composed of Pt or an alloy containing Pt.
(6) The production method according to any one of (1) to (5) , wherein the reaction vessel is provided with at least one valve.
(7) Said 2nd solvent is an ammonia solvent, The manufacturing method as described in any one of (1)- (6) characterized by the above-mentioned.
(8) The production method according to any one of (1) to (7) , wherein the ammonia solvent in the reaction vessel is maintained in a subcritical state or a supercritical state.
(9) The method for producing a nitride crystal according to any one of (1) to (8) , wherein at least the pressure-resistant container is maintained at 20 to 500 MPa.
(10) The method according to any one of (1) to (9) , wherein at least the inside of the pressure-resistant container is heated to 200 to 700 ° C.
(11) The production method according to any one of (1) to (10) , wherein at least one kind of additive is added to the reaction vessel.
(12) The production method according to (11) , wherein the additive contains at least one kind of halogen atom.
(13) The production method according to any one of (1) to (12) , wherein an oxygen content in the raw material is 5% by mass or less.
(14) The manufacturing method according to any one of (1) to (13) , wherein the raw material contains gallium nitride.
(15) At least one type of seed crystal is placed in the reaction vessel, and a raw material dissolved in an ammonia solvent is deposited on the seed crystal. (1) to (14) The manufacturing method of the nitride crystal of description .
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005066543A JP4541935B2 (en) | 2004-03-10 | 2005-03-10 | Method for producing nitride crystal |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004067066 | 2004-03-10 | ||
| JP2005066543A JP4541935B2 (en) | 2004-03-10 | 2005-03-10 | Method for producing nitride crystal |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009154484A Division JP5356933B2 (en) | 2004-03-10 | 2009-06-30 | Nitride crystal manufacturing equipment |
| JP2010074531A Division JP5213899B2 (en) | 2004-03-10 | 2010-03-29 | Method for producing nitride crystal |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005289797A JP2005289797A (en) | 2005-10-20 |
| JP2005289797A5 true JP2005289797A5 (en) | 2009-08-13 |
| JP4541935B2 JP4541935B2 (en) | 2010-09-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2005066543A Active JP4541935B2 (en) | 2004-03-10 | 2005-03-10 | Method for producing nitride crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4541935B2 (en) |
Cited By (1)
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