JP2005268690A - Manufacturing method of multi-layered circuit substrate - Google Patents
Manufacturing method of multi-layered circuit substrate Download PDFInfo
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- JP2005268690A JP2005268690A JP2004082386A JP2004082386A JP2005268690A JP 2005268690 A JP2005268690 A JP 2005268690A JP 2004082386 A JP2004082386 A JP 2004082386A JP 2004082386 A JP2004082386 A JP 2004082386A JP 2005268690 A JP2005268690 A JP 2005268690A
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- circuit board
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- adhesive
- circuit substrate
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本発明は、多層回路基板の製造方法に関する。 The present invention relates to a method for manufacturing a multilayer circuit board.
近年の電子機器の高密度化に伴い、これらに用いられるプリント配線板においても基板の小型化及び薄型化が進み、その柔軟性を生かし需要が伸びつつある。中でも携帯電話に代表されるような小型かつ高密度な回路形成が求められる電子機器の場合、多層回路基板として、多層フレキシブル回路基板が多く用いられる。 With the recent increase in the density of electronic devices, printed wiring boards used in these devices are also becoming smaller and thinner, and demand is increasing due to their flexibility. In particular, in the case of an electronic device that is required to form a small and high-density circuit such as a mobile phone, a multilayer flexible circuit board is often used as the multilayer circuit board.
回路基板を多層化するために、複数の基板同士を積層するが、多層フレキシブル配線板の製造方法のレイアップ工程において、先に設けられた基板穴に対し、ガイドピンを基準に基板を貼り合わせ、熱プレスにて基板全面へ熱と圧力をかけて仮圧着するのが一般的である。(例えば特許文献1)
その後レイアップ工程において、熱圧着により基板間の接着層を半硬化し、基板同士の仮止めを行ったのち、本圧着する。しかし本圧着工程の熱プレス時に密着させるため基板間の接着剤が融解温度に達した付近にて圧力をかけることによりスベリが起きてしまう。
Thereafter, in the lay-up process, the adhesive layer between the substrates is semi-cured by thermocompression bonding, the substrates are temporarily fixed, and then the main bonding is performed. However, slipping occurs when pressure is applied in the vicinity of the adhesive between the substrates reaching the melting temperature in order to achieve close contact during the hot pressing in the main pressing step.
本発明の目的は、多層回路基板の、積層プレス時の各層のズレを抑制するための多層回路基板の製造方法を提供することである。 The objective of this invention is providing the manufacturing method of a multilayer circuit board for suppressing the gap | deviation of each layer at the time of lamination | stacking press of a multilayer circuit board.
このような目的は、下記(1)〜(4)に記載の本発明により達成される。
(1)複数の回路基板と層間接着剤とを積層した積層体を形成する工程と、前記積層体を仮接着する工程と、前記積層体を加熱、加圧する工程とを有する多層回路基板の製造方法であって、前記仮接着の工程で回路基板の周辺部にもうけた、該回路基板と前記接着剤とを仮接着するための基準マーク部の前記接着剤をほぼ完全硬化させることを特徴とする多層回路基板の製造方法。
(2)前記仮接着は、温度が340〜360℃、硬化時間が、60〜120秒で行うものである上記(1)に記載の多層回路基板の製造方法。
(3)前記基準マークは、製品有効外領域に設けるものである上記(1)または(2)に記載の多層回路基板の製造方法。
(4)前記基準マークは、エッチングにより導体回路を形成すると同時に作成するものである上記(1)ないし(3)のいずれかに記載の多層回路基板の製造方法。
Such an object is achieved by the present invention described in the following (1) to (4).
(1) Manufacture of a multilayer circuit board having a step of forming a laminate in which a plurality of circuit boards and an interlayer adhesive are laminated, a step of temporarily adhering the laminate, and a step of heating and pressing the laminate A method comprising: substantially completely curing the adhesive at a reference mark portion for temporarily adhering the circuit board and the adhesive provided in a peripheral portion of the circuit board in the temporary bonding step. A method for manufacturing a multilayer circuit board.
(2) The method for producing a multilayer circuit board according to (1), wherein the temporary adhesion is performed at a temperature of 340 to 360 ° C. and a curing time of 60 to 120 seconds.
(3) The method for manufacturing a multilayer circuit board according to (1) or (2), wherein the reference mark is provided in an area outside the product effective area.
(4) The method for manufacturing a multilayer circuit board according to any one of (1) to (3), wherein the reference mark is created simultaneously with the formation of the conductor circuit by etching.
本発明により、多層回路基板の積層工程での基板間のスベリの防止が可能となり、積層工程時のズレ不良を抑制することが可能となった。 According to the present invention, it is possible to prevent slippage between substrates in a multilayer circuit board lamination process, and it is possible to suppress misalignment during the lamination process.
以下、本発明の多層回路基板の製造方法について、詳細に説明する。 Hereafter, the manufacturing method of the multilayer circuit board of this invention is demonstrated in detail.
図1は、本発明の基準マークの一例を示す図である。図2は、多層回路基板の製品有効外領域に基準マークを配置した一例を示す図である。図3は、複数の回路基板と層間接着材を積層した断面図で、本発明の基準マーク部分にある接着剤を硬化させる領域を示したものである。 FIG. 1 is a diagram showing an example of a reference mark according to the present invention. FIG. 2 is a diagram showing an example in which fiducial marks are arranged in the product non-product effective area of the multilayer circuit board. FIG. 3 is a cross-sectional view in which a plurality of circuit boards and an interlayer adhesive are laminated, and shows a region where the adhesive at the reference mark portion of the present invention is cured.
図1に示すように、本発明の基準マークは、導体回路を形成する時と同時にエッチングによって形成することが好ましい。基準マークの大きさは、特に限定はされないが、15×5mm以上でかつ製品有効領域に含まれない大きさが好ましい。15×5mm未満では、仮接着する際、硬化範囲が小さいため剥がれが発生しやすく好ましくない。 As shown in FIG. 1, the reference mark of the present invention is preferably formed by etching simultaneously with the formation of the conductor circuit. The size of the reference mark is not particularly limited, but is preferably 15 × 5 mm or more and not included in the product effective area. If it is less than 15 × 5 mm, when temporarily bonded, the curing range is small, and peeling is likely to occur.
基準マークの形状は、特に限定はされないが、円形、楕円形、方形、菱形などが好ましく、特に方形が好ましい。 The shape of the reference mark is not particularly limited, but is preferably a circle, an ellipse, a square, a diamond, or the like, and particularly preferably a square.
また、図2に示すように、本発明の基準マークを多層回路基板に配置する場合、特に限定はされないが、シートまたは製品パターンごとに任意で4角に配置することが好ましい。 In addition, as shown in FIG. 2, when the fiducial marks of the present invention are arranged on a multilayer circuit board, there is no particular limitation, but it is preferable to arrange them arbitrarily in four corners for each sheet or product pattern.
図3に示すように、各層間に積層された回路基板の相対する位置に向かい合うように基準マークを設けている。基準マーク以外の所を半田コテなどで圧着し加熱硬化させてもいいが、熱回りの面からも金属箔上を用いて加熱硬化した方が好ましい。加熱硬化する温度は、320〜360℃が好ましい。加熱温度が、320℃未満では、積層された内部の接着材までに熱の伝わりが弱く接着剤の硬化が不完全なため接着強度が十分に出ないため好ましくない。また、360℃を超えるとスポット溶着部まわりの銅箔、べースフィルム等の焦げ・変色が発生するため好ましくない。加熱する時間は、60〜120秒が好ましい。60秒未満では、硬化が不十分であり、120秒を超えると焦げや変色が発生しやすくなるため好ましくない。 As shown in FIG. 3, the reference mark is provided so as to face the opposite position of the circuit board laminated between the respective layers. The portion other than the reference mark may be crimped with a soldering iron or the like and cured by heating, but it is preferable that the surface is heated and cured using a metal foil. The temperature for heat curing is preferably 320 to 360 ° C. A heating temperature of less than 320 ° C. is not preferable because heat transfer is weak to the laminated internal adhesive and the adhesive is not sufficiently cured, resulting in insufficient adhesive strength. On the other hand, if it exceeds 360 ° C., the copper foil, base film, etc. around the spot welded portion will be burned and discolored, which is not preferable. The heating time is preferably 60 to 120 seconds. If it is less than 60 seconds, curing is insufficient, and if it exceeds 120 seconds, scoring or discoloration tends to occur, such being undesirable.
1: 基準マーク銅箔部分
2: 基準マーク銅をエッチングした部分
3: 基準マーク
4: 層間接着剤
5: 回路基板
6: 接着剤を硬化させる領域
1: Reference mark copper foil portion 2: Reference mark copper etched portion 3: Reference mark 4: Interlayer adhesive 5: Circuit board 6: Area for curing adhesive
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JP2004082386A JP2005268690A (en) | 2004-03-22 | 2004-03-22 | Manufacturing method of multi-layered circuit substrate |
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JP2004082386A JP2005268690A (en) | 2004-03-22 | 2004-03-22 | Manufacturing method of multi-layered circuit substrate |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009094558A3 (en) * | 2008-01-24 | 2009-09-24 | Brewer Science Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
US8852391B2 (en) | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
JP2017032797A (en) * | 2015-07-31 | 2017-02-09 | ソニーセミコンダクタソリューションズ株式会社 | Laminated lens structure and method for manufacturing the same, electronic equipment |
-
2004
- 2004-03-22 JP JP2004082386A patent/JP2005268690A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009094558A3 (en) * | 2008-01-24 | 2009-09-24 | Brewer Science Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
US9099512B2 (en) | 2008-01-24 | 2015-08-04 | Brewer Science Inc. | Article including a device wafer reversibly mountable to a carrier substrate |
US9111981B2 (en) | 2008-01-24 | 2015-08-18 | Brewer Science Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
US8852391B2 (en) | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
US9472436B2 (en) | 2010-08-06 | 2016-10-18 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
JP2017032797A (en) * | 2015-07-31 | 2017-02-09 | ソニーセミコンダクタソリューションズ株式会社 | Laminated lens structure and method for manufacturing the same, electronic equipment |
CN107850758A (en) * | 2015-07-31 | 2018-03-27 | 索尼半导体解决方案公司 | Stacked lens arrangement, stacked lens arrangement manufacture method and electronic equipment |
US10627549B2 (en) | 2015-07-31 | 2020-04-21 | Sony Semiconductor Solutions Corporation | Stacked lens structure, method of manufacturing the same, and electronic apparatus |
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