JP2005251769A - Electro-optical device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device, especially such as is equipped with a number of luminous layers, easily and surely preventing oxygen and moisture from infiltrating in a luminous layer or an electrode, and thereby enabling elongation of life of a light-emitting element, and to provide electronic equipment equipped with the same. <P>SOLUTION: The electro-optical device is composed of an element area including a plurality of unit circuits having an element containing a function layer 60 interposed between a first electrode 23 and a second electrode 50, and a switching element for driving the element; a dummy area formed outside the element area, on which, a function layer 60 constituting an element is arranged; a surrounding member 201 fitted on the driving circuit covering a side part of the outer periphery side of the function layer 60 contained in the element nearest to an outer periphery part of the base body 200 in the dummy region; and a gas barrier layer 30 covering the second electrode 50, arranged on a base body 200 respectively. A side part at an outer periphery side of the surrounding member 201 is covered with the second electrode 50, and the gas barrier layer 30 is in contact with the base body 200. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an electro-optical device and an electronic apparatus including the electro-optical device.

Conventionally, in an electro-optical device such as an organic electroluminescence (hereinafter abbreviated as organic EL) display device, an anode, a hole injection layer, a light-emitting layer made of an electro-optical material such as an EL material, a cathode, and the like are provided on a substrate. A laminated structure is known. The organic EL element constituting such an organic EL display device has a lifetime as a light-emitting element due to deterioration of the electro-optical material forming the light-emitting layer due to oxygen, moisture, etc., or decrease in conductivity due to oxygen, moisture, etc. of the cathode. There was a problem of shortening.
As a technique for solving such a problem, conventionally, for example, a method of manufacturing an organic EL element in which a protective film is formed so as to cover a light emitting layer and a cathode is known (see, for example, Patent Document 1).
JP-A-8-111286 (FIG. 1)

  However, in the method of manufacturing the organic EL element, there is no disclosure about a case where there are a large number of light-emitting layers, and therefore it is difficult to apply this technique to an electro-optical device including a display unit including a large number of organic EL elements. is there. Therefore, it is difficult to extend the life of the light emitting element (organic EL element) in the electro-optical device.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to easily and reliably allow oxygen and moisture to enter the light emitting layer and the electrode even in an electro-optical device having a large number of light emitting layers. It is an object of the present invention to provide an electro-optical device and an electronic apparatus equipped with the electro-optical device that can prevent the light emission element and thereby extend the life of the light-emitting element.

To achieve the above object, an electro-optical device according to the present invention includes an element including a functional layer sandwiched between a first electrode and a second electrode on a substrate, and a switching element for driving the element. An element region in which a plurality of unit circuits are formed, a dummy region in which a functional layer constituting the element is disposed and formed outside the element region, and an outer periphery of the base body among the dummy regions An enclosing member that covers the outer peripheral side of the functional layer included in the element closest to the unit and is provided on the base; and a gas barrier layer that covers the second electrode; The side portion on the outer peripheral side is covered with the second electrode, and the gas barrier layer is in contact with the substrate.
The electro-optical device according to the aspect of the invention is the electro-optical device described above, wherein a portion of the gas barrier layer that is in contact with the base and the second electrode is made of a silicon compound.
The electro-optical device according to the present invention is the above-described electro-optical device, wherein the portion of the gas barrier layer that contacts the base and the second electrode is made of silicon oxynitride.
The electro-optical device according to the aspect of the invention is the electro-optical device described above, wherein the gas barrier layer includes a layer made of silicon oxynitride provided on the second electrode side, and a silicon provided on the layer. And at least a layer made of an oxide.
The electro-optical device according to the present invention is the electro-optical device described above, wherein the gas barrier layer is made of silicon oxynitride, and the oxygen concentration on the second electrode side is lower than the oxygen concentration on the outside. To do.
The electro-optical device according to the present invention is the above-described electro-optical device, wherein at least a surface side of the second electrode in contact with the gas barrier layer is made of an inorganic oxide.
An electro-optical device according to the present invention is the above-described electro-optical device, wherein an angle formed between the surface forming the outer portion of the surrounding member and the substrate surface is 110 degrees or more. To do.

According to this electro-optical device, the surrounding member surrounding member is provided so as to cover the outer peripheral side portion of the element layer included in the element region, and the outer peripheral side portion of the surrounding member is covered with the second electrode. In addition, since the second electrode is covered with the gas barrier layer, the side portion on the outer peripheral side of the element layer included in the element region is sealed in triplicate by the surrounding member, the second electrode, and the gas barrier layer. Thus, intrusion of oxygen and moisture is surely prevented, whereby deterioration of the element layer and electrodes due to oxygen and moisture is suppressed, and the life of the element can be extended.
In addition, since it is not necessary to form a second electrode or gas barrier layer for each element layer (for example, a light emitting element layer), it is not necessary to form a fine pattern, and thus can be formed by a simple film formation method. It is possible to improve the performance.

In the electro-optical device, the element layer may exhibit a function when carriers supplied from the first electrode or the second electrode pass through the element layer.
When carriers pass through the element layer, at least a portion having different probability of existence of electrons and holes is generated, and the charge balance of the portion may be lost. Such a part is generally highly reactive and, for example, reacts with oxygen, water, or the like, resulting in a structural defect. The structural defect becomes a carrier trapping site and causes a decrease in the function of the element layer. For this reason, it is necessary to sufficiently protect the element layer from deterioration factors such as oxygen and water. However, the element layer can be protected from oxygen and water by the surrounding member and the gas barrier layer.
In addition, since the carrier injection efficiency is greatly affected by the state of the electrode, in order to maintain appropriate injection efficiency, it is necessary to sufficiently protect it from oxygen, water, etc., which are degradation factors of the electrode. As described above, the surrounding member, the gas barrier layer, and the like can protect the electrode from oxygen and water.

In the electro-optical device, the gas barrier layer is preferably an inorganic compound or a silicon compound.
In this way, for example, when the second electrode is made of an inorganic oxide such as ITO (indium tin oxide), a metal, an alloy, or the like, the gas barrier layer is made of an inorganic compound or a silicon compound. Therefore, the gas barrier layer becomes a dense layer without defects, and the barrier property against oxygen and moisture becomes better.

In the electro-optical device, it is preferable that at least a surface side of the second electrode in contact with the gas barrier layer is made of an inorganic oxide.
In this case, since the surface side of the second electrode that contacts the gas barrier layer is made of an inorganic oxide, the adhesion with the gas barrier layer made of an inorganic compound or silicon compound is improved, and therefore the gas barrier layer is free from defects. It becomes a dense layer and has better barrier properties against oxygen and moisture.

In the electro-optical device, it is preferable that an angle formed between the surface forming the outer portion of the surrounding member and the surface of the base is 110 degrees or more.
If it does in this way, the coverage property of the 2nd electrode and gas barrier layer which covers the outer side part of a surrounding member will become favorable, and the continuity of the 2nd electrode and gas barrier layer on this outer side part will be ensured.

The electro-optical device is preferably an active matrix type.
In this way, since it is not necessary to form the second electrode for each light emitting element, it is not necessary to form a fine pattern. Therefore, the second electrode can be formed by a simple film formation method. It is possible to improve the performance.

In the electro-optical device, it is preferable that the gas barrier layer is configured such that the oxygen concentration on the second electrode side is lower than the oxygen concentration on the outside.
With this configuration, it is possible to prevent oxygen in the gas barrier layer from reaching the light emitting layer through the second electrode and deteriorating the light emitting layer, thereby extending the life of the light emitting layer. It is done.

In the electro-optical device, it is preferable that a protective layer is provided on the gas barrier layer so as to cover the gas barrier layer.
In this way, the light emitting layer and the electrode are protected by the protective layer, so that deterioration of the light emitting layer and the electrode due to oxygen and moisture can be suppressed, and thus the life of the light emitting element can be extended.

In this electro-optical device, the protective layer preferably has a surface protective layer on the surface side.
In this case, for example, the surface protective layer is provided with a layer having functions such as pressure resistance, abrasion resistance, light reflection preventing property, gas barrier property, and ultraviolet blocking property, so that a light emitting layer, an electrode, and further a gas barrier layer are provided. Is also protected by this surface protective layer, so that the lifetime of the light emitting element is extended.

In this electro-optical device, it is preferable that the protective layer has, on the gas barrier layer side, a buffer layer that is in close contact with the gas barrier layer and has a buffer function against mechanical shock.
In this way, the buffer layer exhibits a buffering function against the mechanical shock, so that the mechanical shock to the gas barrier layer and the light emitting element inside the buffer layer is mitigated and the functional deterioration due to the mechanical shock is prevented. be able to.

Such a buffer layer preferably contains a silane coupling agent or alkoxysilane.
In this way, the adhesion with the gas barrier layer becomes better, and therefore the buffering function against mechanical impact is enhanced.

An electronic apparatus according to the present invention includes the electro-optical device described above.
According to this electronic apparatus, since the light-emitting element has an electro-optical device whose life is extended by suppressing deterioration of the light-emitting layer and electrodes due to oxygen and moisture, the product life of the electronic apparatus itself is also good. Become.

As an embodiment of the electro-optical device of the present invention, an EL display device using an electroluminescent material, particularly an organic electroluminescence (EL) material, which is an example of an electro-optical material will be described.
First, the wiring structure of the EL display device of this embodiment will be described with reference to FIG.
An EL display device (electro-optical device) 1 illustrated in FIG. 1 is an active matrix EL display device using a thin film transistor (hereinafter abbreviated as TFT) as a switching element.

As shown in FIG. 1, the EL display device 1 includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction perpendicular to the scanning lines 101, and parallel to each signal line 102. And a plurality of power supply lines 103 extending in parallel to each other, and pixel regions X are provided near intersections of the scanning lines 101 and the signal lines 102.
A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 including a shift register and a level shifter is connected to the scanning line 101.

  Further, in each pixel region X, a switching TFT 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a storage capacitor for holding a pixel signal shared from the signal line 102 via the switching TFT 112. 113, a driving TFT 123 to which a pixel signal held by the holding capacitor 113 is supplied to a gate electrode, and a driving current from the power supply line 103 when electrically connected to the power supply line 103 via the driving TFT 123 And a functional layer 110 sandwiched between the pixel electrode 23 and the cathode (electrode) 50 are provided. The pixel electrode 23, the cathode 50 and the functional layer 110 constitute a light emitting element (organic EL element).

  According to the EL display device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. The on / off state of the driving TFT 123 is determined. Then, current flows from the power supply line 103 to the pixel electrode 23 through the channel of the driving TFT 123, and further current flows to the cathode 50 through the functional layer 110. The functional layer 110 emits light according to the amount of current flowing through it.

Next, a specific configuration of the EL display device 1 of the present embodiment will be described with reference to FIGS.
In the EL display device 1 of the present embodiment, as shown in FIG. 2, a substrate 20 having electrical insulation and pixel electrodes connected to switching TFTs (not shown) are arranged in a matrix on the substrate 20. A pixel electrode area (not shown), a power supply line (not shown) arranged around the pixel electrode area and connected to each pixel electrode, and at least a rectangular shape in plan view located on the pixel electrode area The pixel portion 3 (within the dashed-dotted line frame in FIG. 2) is an active matrix type. In the present invention, the substrate 20 and the switching TFT and various circuits formed on the substrate 20 as will be described later, and an interlayer insulating film are referred to as a base. (Indicated by reference numeral 200 in FIGS. 3 and 4)

The pixel unit 3 includes a real display area 4 in the center (inside the two-dot chain line in FIG. 2) and a dummy area 5 (area between the one-dot chain line and the two-dot chain line) arranged around the real display area 4. It is divided into.
In the actual display area 4, display areas R, G, and B each having a pixel electrode are arranged in a matrix so as to be separated from each other in the AB direction and the CD direction.
Further, scanning line driving circuits 80 and 80 are arranged on both sides of the actual display area 4 in FIG. These scanning line drive circuits 80 and 80 are arranged below the dummy region 5.

  Further, an inspection circuit 90 is arranged above the actual display area 4 in FIG. The inspection circuit 90 is a circuit for inspecting the operating state of the EL display device 1, and includes, for example, inspection information output means (not shown) for outputting the inspection result to the outside, and is displayed during manufacture or at the time of shipment. The apparatus is configured to be able to inspect the quality and defect of the apparatus. The inspection circuit 90 is also disposed below the dummy area 5.

  The scanning line driving circuit 80 and the inspection circuit 90 are applied with a driving voltage from a predetermined power supply unit via the driving voltage conducting unit 310 (see FIG. 3) and the driving voltage conducting unit 340 (see FIG. 4). It is configured. Further, the drive control signal and drive voltage to the scanning line drive circuit 80 and the inspection circuit 90 are supplied from a predetermined main driver for controlling the operation of the EL display device 1 and the drive control signal conduction unit 320 (see FIG. 3) and Transmission and application are performed via the drive voltage conduction unit 350 (see FIG. 4). The drive control signal in this case is a command signal from a main driver or the like related to control when the scanning line drive circuit 80 and the inspection circuit 90 output signals.

In addition, as shown in FIGS. 3 and 4, the EL display device 1 includes a first electrode (pixel electrode 23), a light emitting layer 60 as a functional layer in the present invention, and a second electrode (cathode 50) on a substrate 200. A large number of light-emitting elements (organic EL elements) provided with a gas barrier layer 30 are formed.
In this example, the functional layer is the light emitting layer 60, and the region including the element layer including the functional layer is the element region (not shown), but the functional layer in the present invention is typically a light emitting layer. Although it is an (electroluminescence layer), it is good also as carrier injection layers or carrier transport layers, such as a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer. Furthermore, a hole blocking layer (hole blocking layer) or an electron blocking layer (electron blocking layer) may be used.

  In the case of a so-called top emission type EL display device, the substrate 20 constituting the base body 200 is configured to extract emitted light from the gas barrier layer 30 side, which is the opposite side of the substrate 20, so that either a transparent substrate or an opaque substrate is used. Can also be used. Examples of opaque substrates include ceramics such as alumina, metal sheets such as stainless steel that have been subjected to insulation treatment such as surface oxidation, thermosetting resins and thermoplastic resins, and films thereof (plastic films). It is done.

  In the case of a so-called back emission type EL display device, since the emitted light is extracted from the substrate 20 side, a transparent or translucent substrate 20 is employed. For example, glass, quartz, resin (plastic, plastic film) and the like can be mentioned, and a glass substrate is particularly preferably used. In the present embodiment, a top emission type in which emitted light is extracted from the gas barrier layer 30 side, and thus the substrate 20 is made of an opaque material such as an opaque plastic film.

A circuit unit 11 including a driving TFT 123 for driving the pixel electrode 23 and the like is formed on the substrate 20, and a large number of light emitting elements (organic EL elements) are provided thereon. As shown in FIG. 5, the light emitting element includes a pixel electrode (first electrode) 23 that functions as an anode, a hole transport layer 70 that injects / transports holes from the pixel electrode 23, and an electro-optic material. A light emitting layer 60 including one organic EL material and a cathode (second electrode) 50 are sequentially formed.
Based on such a configuration, the light emitting element generates light emission in the light emitting layer 60 by combining holes injected from the hole transport layer 70 and electrons from the cathode 50. Yes.

Since the pixel electrode 23 is a top emission type in the present embodiment, it does not need to be transparent, and is therefore formed of an appropriate conductive material.
As a material for forming the hole transport layer 70, for example, a polythiophene derivative, a polypyrrole derivative, or a doped body thereof is used. Specifically, a dispersion of 3,4-polyethylenediosithiophene / polystyrene sulfonic acid (PEDOT / PSS) [trade name; Bytron-p: manufactured by Bayer], that is, polystyrene as a dispersion medium A dispersion obtained by dispersing 3,4-polyethylenediosithiophene in sulfonic acid and further dispersing it in water is used.

As a material for forming the light emitting layer 60, a known light emitting material capable of emitting fluorescence or phosphorescence can be used. Specifically, (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), polyvinyl carbazole (PVK), polythiophene derivative, polymethyl Polysilanes such as phenylsilane (PMPS) are preferably used.
In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as.
In addition, it replaces with the said polymeric material, and a conventionally well-known low molecular material can also be used.
In addition, an electron injection layer may be formed on the light emitting layer 60 as necessary.

In the present embodiment, the hole transport layer 70 and the light emitting layer 60 are composed of the lyophilic control layer 25 and the organic bank layer 221 formed in a lattice shape on the substrate 200 as shown in FIGS. The hole transport layer 70 and the light emitting layer 60 surrounded by the light emitting element 60 are element layers constituting a single light emitting element (organic EL element). In addition, in the lyophilic control layer 25 and the organic bank layer 221 formed in a lattice shape, the outermost portion of the light emitting layer 60 in the state of covering the outermost portion, that is, the outermost portion of the light emitting layer 60 is covered. The surrounding part is the surrounding member 201 in the present invention.
Here, with respect to the surrounding member 201, in particular, in the organic bank layer 221 that forms the upper part, the angle θ of the surface 201 a that forms the outer portion with respect to the surface of the base body 200 is 110 degrees or more. The reason for such an angle is that, as will be described later, the step coverage of the cathode 50 and the gas barrier layer 30 formed thereon is improved, and the continuity of the cathode and the gas barrier layer 30 on the outer side is ensured. Because.

  As shown in FIGS. 3 to 5, the cathode 50 has a larger area than the total area of the actual display region 4 and the dummy region 5, and is formed so as to cover each. The light emitting layer 60 and the organic bank layer 221 and the upper surface of the surrounding member 201, and further, the surface 201 a that forms the outer side of the surrounding member 201 are covered on the base body 200. The cathode 50 is connected to a cathode wiring 202 formed on the outer peripheral portion of the base body 200 outside the surface 201a of the surrounding member 201 as shown in FIG. A flexible substrate 203 is connected to the cathode wiring 202, whereby the cathode 50 is connected to a driving IC (driving circuit) (not shown) on the flexible substrate 203 via the cathode wiring 202. Yes.

  As a material for forming the cathode 50, since this embodiment is a top emission type, it needs to be light transmissive, and therefore, a transparent conductive material is used. ITO is suitable as the transparent conductive material. In addition, for example, an indium oxide / zinc oxide amorphous transparent conductive film (Indium Zinc Oxide: IZO / registered trademark)) (Idemitsu Kosan) Etc.) can be used. In the present embodiment, ITO is used.

  On the cathode 50, the gas barrier layer 30 is provided so as to cover a portion of the cathode 50 exposed on the substrate 200. The gas barrier layer 30 is for preventing oxygen and moisture from entering inside thereof, thereby preventing the entry of oxygen and moisture into the cathode 50 and the light emitting layer 60. The deterioration of the light emitting layer 60 is suppressed.

  The gas barrier layer 30 is made of, for example, an inorganic compound, and is preferably formed of a silicon compound, that is, silicon nitride, silicon oxynitride, silicon oxide, or the like. However, other than silicon compounds, for example, alumina, tantalum oxide, titanium oxide, and other ceramics may be used. Thus, if the gas barrier layer 30 is formed of an inorganic compound, the cathode 50 is made of ITO, so that the adhesion between the gas barrier layer 30 and the cathode 50 is improved, and therefore the gas barrier layer 30 is defective. As a result, the barrier property against oxygen and moisture becomes better.

The gas barrier layer 30 may have a structure in which, for example, different layers of the above silicon compounds are stacked. Specifically, the gas barrier layer 30 is formed in the order of silicon nitride and silicon oxynitride from the cathode 50 side, or The gas barrier layer 30 is preferably formed by forming silicon oxynitride and silicon oxide in this order from the cathode 50 side. In addition to such a combination, when two or more silicon oxynitrides having different composition ratios are stacked, the oxygen concentration of the layer on the cathode 50 side is lower than the oxygen concentration of the outer layer. It is preferable to do this.
In this way, since the oxygen concentration on the cathode 50 side is lower than that on the opposite side, the oxygen in the gas barrier layer 30 passes through the cathode 50 and reaches the light emitting layer 60 on the inner side, causing the light emitting layer 60 to deteriorate. It is possible to prevent the light emitting layer 60 from extending its life.

Further, the gas barrier layer 30 may be configured so that its composition is non-uniform and its oxygen concentration changes continuously or discontinuously, without having a laminated structure. It is preferable for the reason described above that the oxygen concentration on the cathode 50 side be lower than the oxygen concentration on the outside.
In addition, the thickness of the gas barrier layer 30 is preferably 10 nm or more and 500 nm or less. If it is less than 10 nm, through holes may be partially formed due to film defects or film thickness variations, and the gas barrier property may be impaired. If it exceeds 500 nm, cracks due to stress occur. This is because it may occur.
In addition, since the top emission type is used in the present embodiment, the gas barrier layer 30 needs to have translucency. Therefore, by adjusting the material and film thickness appropriately, the light beam in the visible light region can be obtained in the present embodiment. The transmittance is set to 80% or more, for example.

A circuit unit 11 is provided below the light emitting element as shown in FIG. The circuit unit 11 is formed on the substrate 20 and constitutes the base body 200. That is, a base protective layer 281 mainly composed of SiO ₂ is formed on the surface of the substrate 20 as a base, and a silicon layer 241 is formed thereon. A gate insulating layer 282 mainly composed of SiO ₂ and / or SiN is formed on the surface of the silicon layer 241.

In the silicon layer 241, a region overlapping with the gate electrode 242 with the gate insulating layer 282 interposed therebetween is a channel region 241a. The gate electrode 242 is a part of the scanning line 101 (not shown). On the other hand, a first interlayer insulating layer 283 mainly composed of SiO ₂ is formed on the surface of the gate insulating layer 282 that covers the silicon layer 241 and on which the gate electrode 242 is formed.

  Further, in the silicon layer 241, a low concentration source region 241b and a high concentration source region 241S are provided on the source side of the channel region 241a, while a low concentration drain region 241c and a high concentration drain are provided on the drain side of the channel region 241a. The region 241D is provided to form a so-called LDD (Light Doped Drain) structure. Among these, the high-concentration source region 241S is connected to the source electrode 243 through a contact hole 243a that opens over the gate insulating layer 282 and the first interlayer insulating layer 283. The source electrode 243 is configured as a part of the above-described power supply line 103 (see FIG. 1, extending in the direction perpendicular to the paper surface at the position of the source electrode 243 in FIG. 5). On the other hand, the high-concentration drain region 241D is connected to the drain electrode 244 made of the same layer as the source electrode 243 through a contact hole 244a that opens through the gate insulating layer 282 and the first interlayer insulating layer 283.

The upper layer of the first interlayer insulating layer 283 on which the source electrode 243 and the drain electrode 244 are formed is covered with a second interlayer insulating layer 284 mainly composed of, for example, an acrylic resin component. The second interlayer insulating layer 284 can be made of a material other than an acrylic insulating film, such as SiN or SiO ₂ . A pixel electrode 23 made of ITO is formed on the surface of the second interlayer insulating layer 284 and is connected to the drain electrode 244 through a contact hole 23a provided in the second interlayer insulating layer 284. Yes. That is, the pixel electrode 23 is connected to the high concentration drain region 241D of the silicon layer 241 through the drain electrode 244.

  Note that TFTs (driving circuit TFTs) included in the scanning line driving circuit 80 and the inspection circuit 90, that is, N-channel type or P-channel type TFTs constituting an inverter included in the shift register among these driving circuits, for example. The structure is the same as that of the driving TFT 123 except that it is not connected to the pixel electrode 23.

On the surface of the second interlayer insulating layer 284 on which the pixel electrode 23 is formed, the pixel electrode 23, the lyophilic control layer 25 and the organic bank layer 221 are provided. The lyophilic control layer 25 is mainly made of a lyophilic material such as SiO ₂ , and the organic bank layer 221 is made of acrylic or polyimide. On the pixel electrode 23, the hole transport layer 70, the light emitting layer 60, and the opening 25 a provided in the lyophilic control layer 25 and the opening 221 a surrounded by the organic bank 221 are provided. Are stacked in this order. In addition, “lyophilic” of the lyophilic control layer 25 in this embodiment means that the lyophilic property is higher than at least materials such as acrylic and polyimide constituting the organic bank layer 221. .
The layers up to the second interlayer insulating layer 284 on the substrate 20 described above constitute the circuit unit 11.

  Here, in the EL display device 1 of the present embodiment, each light emitting layer 60 is formed so that the light emission wavelength bands correspond to the three primary colors of light in order to perform color display. For example, as the light emitting layer 60, a red light emitting layer 60R whose light emission wavelength band corresponds to red, a green light emitting layer 60G corresponding to green, and a blue organic EL layer 60B corresponding to blue, respectively, are displayed. , G, and B constitute one pixel that performs color display with these display regions R, G, and B. In addition, a BM (black matrix) (not shown) in which metallic chromium is formed by sputtering or the like is formed between the organic bank layer 221 and the lyophilic control layer 25 at the boundary of each color display region. Yes.

  Next, an example of a method for manufacturing the EL display device 1 according to the present embodiment will be described with reference to FIGS. In the present embodiment, the case where the EL display device 1 as an electro-optical device is a top emission type will be described. Moreover, each sectional view shown in FIGS. 6 to 10 corresponds to the sectional view taken along the line AB in FIG.

  First, as shown in FIG. 6A, a base protective layer 281 is formed on the surface of the substrate 20. Next, after an amorphous silicon layer 501 is formed on the base protective layer 281 by using an ICVD method, a plasma CVD method, or the like, crystal grains are grown by a laser annealing method or a rapid heating method to form a polysilicon layer.

  Next, as shown in FIG. 6B, the polysilicon layer is patterned by a photolithography method to form island-like silicon layers 241, 251 and 261. Among these, the silicon layer 241 is formed in the display region and constitutes the driving TFT 123 connected to the pixel electrode 23, and the silicon layers 251 and 261 are P-channel type included in the scanning line driving circuit 80. And N-channel type TFTs (driving circuit TFTs).

  Next, a gate insulating layer 282 is formed of a silicon oxide film having a thickness of about 30 nm to 200 nm on the entire surface of the silicon layers 241, 251 and 261, and the base protective layer 281 by plasma CVD, thermal oxidation, or the like. Here, when the gate insulating layer 282 is formed by utilizing the thermal oxidation method, the silicon layers 241, 251 and 261 are also crystallized, and these silicon layers can be made into polysilicon layers.

When channel doping is performed on the silicon layers 241, 251 and 261, for example, boron ions are implanted at a dose of about 1 × 10 ¹² / cm ² at this timing. As a result, the silicon layers 241, 251 and 261 are low-concentration P-type silicon layers having an impurity concentration (calculated from the impurities after activation annealing) of about 1 × 10 ¹⁷ / cm ³ .

Next, an ion implantation selection mask is formed in a part of the channel layer of the P-channel TFT and the N-channel TFT, and in this state, phosphorus ions are ion-implanted at a dose of about 1 × 10 ¹⁵ / cm ² . As a result, high concentration impurities are introduced into the patterning mask in a self-aligned manner, and as shown in FIG. 6C, the high concentration source regions 241S and 261S and the high concentration drain region are formed in the silicon layers 241 and 261. 241D and 261D are formed.

  Next, as shown in FIG. 6C, a gate electrode forming conductive layer 502 made of a metal film such as doped silicon, a silicide film, or an aluminum film, a chromium film, or a tantalum film is formed on the entire surface of the gate insulating layer 282. Form. The thickness of the conductive layer 502 is approximately 500 nm. Thereafter, as shown in FIG. 6D, a gate electrode 252 for forming a P-channel type driving circuit TFT, a gate electrode 242 for forming a pixel TFT, and an N-channel type driving circuit TFT are formed by patterning. A gate electrode 262 to be formed is formed. Further, the drive control signal conducting portion 320 (350) and the first layer 121 of the cathode power supply wiring are also formed at the same time. In this case, the drive control signal conducting portion 320 (350) is disposed in the dummy region 5.

Subsequently, as shown in FIG. 6D, using the gate electrodes 242, 252 and 262 as masks, phosphorus ions are ionized at a dose of about 4 × 10 ¹³ / cm ² with respect to the silicon layers 241, 251 and 261. inject. As a result, low-concentration impurities are introduced in a self-aligned manner with respect to the gate electrodes 242, 252 and 262, and as shown in FIG. 6 (d), the low-concentration source regions 241b and 261b in the silicon layers 241 and 261, and Low concentration drain regions 241c and 261c are formed. In addition, low concentration impurity regions 251S and 251D are formed in the silicon layer 251.

Next, as shown in FIG. 7E, an ion implantation selection mask 503 that covers a portion other than the P-channel type driver circuit TFT 252 is formed. Using this ion implantation selection mask 503, boron ions are implanted into the silicon layer 251 at a dose of about 1.5 × 10 ¹⁵ / cm ² . As a result, since the gate electrode 252 constituting the TFT for the P-channel type drive circuit also functions as a mask, the silicon layer 252 is doped with a high concentration impurity in a self-aligning manner. Therefore, the low-concentration impurity regions 251S and 251D are counter-doped and become source and drain regions of a P-type channel type driver circuit TFT.

  Next, as shown in FIG. 7 (f), a first interlayer insulating layer 283 is formed over the entire surface of the substrate 20, and the first interlayer insulating layer 283 is patterned by using a photolithography method, whereby each of the TFTs. A contact hole C is formed at a position corresponding to the source electrode and the drain electrode.

  Next, as shown in FIG. 7G, a conductive layer 504 made of a metal such as aluminum, chromium, or tantalum is formed so as to cover the first interlayer insulating layer 283. The thickness of the conductive layer 504 is approximately 200 nm to 800 nm. Thereafter, in the conductive layer 504, a region 240a where the source electrode and the drain electrode of each TFT are to be formed, a region 310a where the driving voltage conducting portion 310 (340) is to be formed, and a second layer of the cathode power supply wiring are formed. A patterning mask 505 is formed so as to cover the region 122a to be formed, and the conductive layer 504 is patterned so that the source electrodes 243, 253, 263, and the drain electrodes 244, 254, 264 shown in FIG. Form.

Next, as shown in FIG. 8I, a second interlayer insulating layer 284 that covers the first interlayer insulating layer 283 on which these are formed is formed of a polymer material such as an acrylic resin. The second interlayer insulating layer 284 is preferably formed to a thickness of about 1 to 2 μm. Note that the second interlayer insulating film can be formed of SiN or SiO ₂ , and it is desirable to form the SiN film with a thickness of 200 nm and the SiO _{2 with} a thickness of 800 nm.

Next, as shown in FIG. 8J, a portion of the second interlayer insulating layer 284 corresponding to the drain electrode 244 of the driving TFT is removed by etching to form a contact hole 23a.
Thereafter, a conductive film to be the pixel electrode 23 is formed so as to cover the entire surface of the substrate 20. Then, by patterning this transparent conductive film, as shown in FIG. 9 (k), a pixel electrode 23 that is electrically connected to the drain electrode 244 through the contact hole 23a of the second interlayer insulating layer 284 is formed, and at the same time, a dummy An area dummy pattern 26 is also formed. In FIGS. 3 and 4, the pixel electrode 23 and the dummy pattern 26 are collectively referred to as a pixel electrode 23.

  The dummy pattern 26 is configured not to be connected to the lower metal wiring via the second interlayer insulating layer 284. That is, the dummy pattern 26 is arranged in an island shape and has substantially the same shape as the shape of the pixel electrode 23 formed in the actual display region. Of course, the structure may be different from the shape of the pixel electrode 23 formed in the display region. In this case, the dummy pattern 26 includes at least the one located above the drive voltage conducting portion 310 (340).

  Next, as shown in FIG. 9L, a lyophilic control layer 25 as an insulating layer is formed on the pixel electrode 23, the dummy pattern 26, and the second interlayer insulating film. In the pixel electrode 23, the lyophilic control layer 25 is formed so as to partially open, and holes can be transferred from the pixel electrode 23 in the opening 25a (see also FIG. 3). On the contrary, in the dummy pattern 26 in which the opening 25a is not provided, the insulating layer (lyophilic control layer) 25 serves as a hole movement shielding layer and does not cause hole movement. Subsequently, in the lyophilic control layer 25, a BM (not shown) is formed in a concave portion formed between two different pixel electrodes 23. Specifically, a film is formed on the concave portion of the lyophilic control layer 25 by sputtering using metallic chromium.

  Next, as shown in FIG. 9 (m), an organic bank layer 221 is formed so as to cover a predetermined position of the lyophilic control layer 25, specifically, the BM. As a specific method for forming the organic bank layer, for example, an organic layer is formed by applying a resist in which a resist such as an acrylic resin or a polyimide resin is dissolved in a solvent by various coating methods such as a spin coating method or a dip coating method. . The constituent material of the organic layer may be any material as long as it does not dissolve in the ink solvent described later and is easily patterned by etching or the like.

Subsequently, the organic layer is patterned using a photolithography technique and an etching technique, and a bank opening 221a is formed in the organic layer, thereby forming an organic bank layer 221 having a wall surface in the opening 221a. Here, in the organic bank layer 221, the angle θ with respect to the surface of the base body 200 is 110 degrees or more with respect to the portion forming the outermost periphery, that is, the surface 201 a that forms the outer side of the surrounding member 201 in the present invention described above. It is preferable to form such that By forming at such an angle, the step coverage of the cathode 50 and further the gas barrier layer 30 formed thereon can be improved.
In this case, the organic bank layer 221 includes at least a layer positioned above the drive control signal conducting unit 320.

  Next, a region showing lyophilicity and a region showing liquid repellency are formed on the surface of the organic bank layer 221. In the present embodiment, each region is formed by plasma processing. Specifically, in the plasma treatment, the upper surface of the organic bank layer 221, the wall surface of the opening 221a, the electrode surface 23c of the pixel electrode 23, and the upper surface of the lyophilic control layer 25 are made lyophilic. The ink-repelling step, the ink-repelling step for making the upper surface of the organic bank layer and the wall surface of the opening liquid-repellent, and the cooling step.

That is, the base material (substrate 20 including a bank or the like) is heated to a predetermined temperature, for example, about 70 to 80 ° C., and then a plasma treatment (O 2 plasma treatment) using oxygen as a reactive gas in an atmospheric atmosphere as an ink-philic process. Do. Next, as an ink repellent process, a plasma process using CF ₄ as a reaction gas (CF ₄ plasma process) is performed in an air atmosphere, and then the substrate heated for the plasma process is cooled to room temperature. In addition, lyophilicity and liquid repellency are imparted to predetermined locations.

In this CF ₄ plasma treatment, the electrode surface 23c of the pixel electrode 23 and the lyophilic control layer 25 are somewhat affected, but the structure of the ITO that is the material of the pixel electrode 23 and the lyophilic control layer 25. Since materials such as SiO ₂ and TiO ₂ have poor affinity for fluorine, the hydroxyl group imparted in the ink-philic process is not substituted with the fluorine group, and the lyophilic property is maintained.

  Next, the hole transport layer 70 is formed by a hole transport layer forming step. In this hole transport layer forming step, for example, a hole transport layer material is applied onto the electrode surface 23c by a droplet discharge method such as an ink jet method or a spin coating method, and then a drying process and a heat treatment are performed. A hole transport layer 70 is formed on 23. When the hole transport layer material is selectively applied by, for example, an ink jet method, first, the hole transport layer material is filled in the ink jet head (not shown), and the discharge nozzle of the ink jet head is placed in the lyophilic control layer 25. A liquid droplet whose droplet amount is controlled from a discharge nozzle is controlled while moving the inkjet head and the base material (substrate 20) relative to the electrode surface 23c located in the formed opening 25a. It discharges to the electrode surface 23c. Next, the discharged droplets are dried and the hole transport layer 70 is formed by evaporating the dispersion medium and the solvent contained in the hole transport layer material.

Here, the droplets ejected from the ejection nozzle spread on the electrode surface 23c that has been subjected to the lyophilic treatment, and are filled in the opening 25a of the lyophilic control layer 25. On the other hand, droplets are repelled and do not adhere to the upper surface of the organic bank layer 221 that has been subjected to ink repellent treatment. Therefore, even if the droplet is deviated from the predetermined discharge position and discharged onto the upper surface of the organic bank layer 221, the upper surface is not wetted by the droplet, and the repelled droplet is opened in the lyophilic control layer 25. Roll into part 25a.
In addition, after this hole transport layer formation process, in order to prevent the oxidation of the hole transport layer 70 and the light emitting layer 60, it is preferable to carry out in inert gas atmospheres, such as nitrogen atmosphere and argon atmosphere.

Next, the light emitting layer 60 is formed by the light emitting layer forming step. In this light emitting layer forming step, the light emitting layer forming material is discharged onto the hole transport layer 70 by, for example, the above-described ink jet method, and then subjected to a drying process and a heat treatment, whereby openings formed in the organic bank layer 221 are formed. The light emitting layer 60 is formed in 221a. In this light emitting layer forming step, a nonpolar solvent that is insoluble in the hole transporting layer 70 is used as a solvent used for the light emitting layer forming material in order to prevent re-dissolution of the hole transporting layer 70.
In this light emitting layer forming step, for example, a blue (B) light emitting layer forming material is selectively applied to a blue display region by the above-described ink jet method, dried, and then similarly treated with green (G), red (R) is also selectively applied to the display area and dried.
If necessary, an electron injection layer may be formed on the light emitting layer 60 as described above.

  Next, as shown in FIG. 10 (n), the cathode 50 is formed by the cathode layer forming step. In this cathode layer forming step, for example, ITO is formed into a film by a physical vapor deposition method such as a vapor deposition method. At this time, the cathode 50 not only covers the light emitting layer 60, the organic bank layer 221 and the upper surface of the enclosing member 201, but also covers the surface 201a that forms the outer portion of the enclosing member 201. To form.

  Thereafter, as shown in FIG. 10 (n), the gas barrier layer 30 is formed so as to cover the cathode 50, that is, to cover all portions of the cathode 50 exposed on the substrate 200, and the EL display device of the present invention ( Electro-optical device). Here, as a method for forming the gas barrier layer 30, a film is first formed by a physical vapor deposition method such as a sputtering method or an ion plating method, and then a chemical vapor deposition method such as a plasma CVD method is used. It is preferable to form a film. Physical vapor deposition methods such as sputtering and ion plating generally provide a film with relatively good adhesion even to a heterogeneous substrate surface, but the resulting film is agglomerated and has defects. There are drawbacks such as being easy to form and a film having a large stress. Chemical vapor deposition, on the other hand, provides a dense and good film quality with few stresses and excellent step coverage, but generally provides adhesion and film-forming properties to a different substrate surface. There is a drawback that it is difficult. Therefore, for the initial film formation, a physical vapor deposition method is adopted, for example, half or more of the required film thickness is formed, and the chemical vapor deposition method is used in the later film formation, If the defects of the formed film are compensated, the gas barrier layer 30 having excellent gas barrier properties (barrier properties against oxygen and moisture) as a whole can be formed in a relatively short time.

Here, the gas barrier layer 30 may be formed as a single layer using the same material as described above, or may be formed by stacking a plurality of layers using different materials. Although it is formed of layers, the composition may be formed so as to change continuously or discontinuously in the film thickness direction.
In the case of stacking a plurality of layers with different materials, for example, as described above, the inner layer (layer on the cathode 50 side) formed by physical vapor deposition is silicon nitride or silicon oxynitride. The outer layer formed by chemical vapor deposition is preferably silicon oxynitride or silicon oxide.

When forming the inner layer by physical vapor deposition, the gas barrier layer 30 is formed by initially reducing the amount of oxygen supplied into the film forming apparatus and then increasing it continuously or discontinuously. The oxygen concentration inside may be formed to be lower on the cathode 50 side (inner side) and higher on the outer side.
The gas barrier layer 30 may be formed by a single film formation method. In this case as well, as described above, the oxygen concentration is reduced on the cathode 50 side (inside). It is preferable to do this.

  In such an EL display device 1, the surrounding member 201 is formed so as to cover the outer side portion of the light emitting layer 60 at the outermost peripheral position, and the cathode 50 is covered so as to cover the outer side portion of this surrounding member 201. Since the gas barrier layer 30 is formed so as to cover the exposed portion of the cathode 50 on the base body 200, the outer side of the light emitting layer 60 is tripled by the surrounding member 201, the cathode 50, and the gas barrier layer 30. By being sealed in, oxygen and moisture can be reliably prevented from entering. Therefore, deterioration of the light emitting layer 60 and the cathode 50 due to oxygen and moisture can be suppressed, and the life of the light emitting element can be extended.

Moreover, even if the portion of the gas barrier layer 30 in contact with the base 200 is made of a silicon compound, even if the substrate 20 constituting the base 200 is permeable to moisture such as resin, the interlayer formed on the substrate 20 The gas barrier layer 30 together with the insulating film or the like can seal all the outside of the light emitting element portion, so that the life of the light emitting element can be further extended.
Further, since it is an active matrix type, it is not necessary to form the cathode 50 and the gas barrier layer 30 for each light emitting element, and therefore, it is not necessary to form a fine pattern with respect to the cathode 50 and the gas barrier layer 30. Therefore, since these can be formed by a simple film formation method, productivity can be improved.

The EL display device 1 has been described by taking the top emission type as an example. However, the present invention is not limited to this, and the present invention is not limited to this. The back emission type and the type that emits emitted light on both sides are also described. Applicable. In particular, in the case of the back emission type, it is not necessary to use a transparent electrode for the cathode 50. However, in this case as well, it is preferable to form at least the surface side of the cathode 50 in contact with the gas barrier layer 30 with an inorganic oxide.
In this way, since the surface side of the cathode 50 in contact with the gas barrier layer 30 is made of an inorganic oxide, the adhesion with the gas barrier layer 30 made of an inorganic compound or a silicon compound is improved. It becomes a dense layer with no oxygen and moisture barrier properties.

Further, in the case of a back emission type or a type that emits emitted light on both sides, the switching TFT 112 and the driving TFT 123 formed on the base 200 are not directly under the light emitting element, but the lyophilic control layer 25 and It is preferable to increase the aperture ratio by forming the organic bank layer 221 directly below.
In the EL display device 1, the first electrode in the present invention is made to function as an anode and the second electrode is made to function as a cathode. However, the first electrode is made a cathode and the second electrode is made to be reversed. You may comprise so that it may function as an anode, respectively. However, in that case, the formation positions of the light emitting layer 60 and the hole transport layer 70 need to be switched.

In the above embodiment, the EL display device 1 is applied to the electro-optical device of the present invention. However, the present invention is not limited to this, and the second electrode is basically provided outside the substrate. The present invention can be applied to any form of electro-optical device.
In the EL display device 1, the gas barrier layer 30 is the outermost layer. However, the outside of the gas barrier layer 30 may be further sealed with a sealing substrate or a sealing can generally used conventionally.
FIG. 11 shows an embodiment in which a protective layer 204 is provided so as to cover the gas barrier layer 30 as an example of sealing the outside of the gas barrier layer 30. In this embodiment, the protective layer 204 includes a buffer layer 205 provided on the gas barrier layer 30 side and a surface protective layer 206 provided thereon.

  The buffer layer 205 is in close contact with the gas barrier layer 30 and has a buffer function against mechanical impact from the outside. For example, the buffer layer 205 is a urethane-based, acrylic-based, epoxy-based, polyolefin-based resin, etc. It is formed of an adhesive made of a material that is softer than the protective layer 206 and has a low glass transition point. In addition, it is preferable to add a silane coupling agent or alkoxysilane to such an adhesive, and in this way, the adhesion between the formed buffer layer 205 and the gas barrier layer 30 is improved. Therefore, the shock absorbing function against mechanical shock is increased. In particular, when the gas barrier layer 30 is formed of a silicon compound, the adhesion to the gas barrier layer 30 can be improved by a silane coupling agent or alkoxysilane, and thus the gas barrier property of the gas barrier layer 30 is improved. be able to.

The surface protective layer 206 constitutes the surface side of the protective layer 204 by being provided on the buffer layer 205, and has a pressure resistance, an abrasion resistance, an external light antireflection property, a gas barrier property, an ultraviolet ray blocking property, and the like. It is a layer having at least one function. Specifically, it is formed of a polymer layer (plastic film), a DLC (diamond-like carbon) layer, glass or the like.
In the EL display device of this example, both the surface protective layer 206 and the buffer layer 205 need to be transparent when the top emission type is used. There is no need.

If the protective layer 204 is provided on the gas barrier layer 30 in this manner, the surface protective layer 206 has functions such as pressure resistance, wear resistance, antireflection, gas barrier property, and ultraviolet blocking property. The light emitting layer 60, the cathode 50, and also the gas barrier layer can be protected by the surface protective layer 206, and thus the life of the light emitting element can be extended.
In addition, since the buffer layer 205 exhibits a buffering function against mechanical shock, when a mechanical shock is applied from the outside, the mechanical shock to the gas barrier layer 30 and the light emitting element inside the gas barrier layer 30 is reduced. It is possible to prevent functional deterioration of the light-emitting element due to mechanical impact.

Next, the electronic apparatus of the present invention will be described. The electronic apparatus of the present invention has the above-described EL display device (electro-optical device) as a display unit, and specifically, the one shown in FIG.
FIG. 12A is a perspective view showing an example of a mobile phone. In FIG. 12A, reference numeral 1000 denotes a mobile phone main body, and reference numeral 1001 denotes a display unit using the EL display device.
FIG. 12B is a perspective view showing an example of a wristwatch type electronic device. In FIG. 12B, reference numeral 1100 denotes a watch body, and reference numeral 1101 denotes a display unit using the EL display device.
FIG. 12C is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 12C, reference numeral 1200 denotes an information processing apparatus, reference numeral 1201 denotes an input unit such as a keyboard, reference numeral 1202 denotes a display unit using the EL display device, and reference numeral 1203 denotes an information processing apparatus main body.
Each of the electronic devices shown in FIGS. 12A to 12C includes a display unit having the EL display device (electro-optical device). Therefore, the length of the light emitting element of the EL display device that constitutes the display unit. Life expectancy will be improved.

"Experiment 1"
In order to confirm the gas barrier property of the gas barrier layer in the present invention, the following experiment was conducted.
Sample Preparation PET (polyethylene terephthalate; “T60” thickness 188 μm manufactured by Toray Industries, Inc.) was used as a substrate, and an electrode material and a gas barrier layer forming material were formed thereon as follows to prepare a sample.
・ Production of inorganic oxide electrode (ITO) (film formation conditions)
Magnetron DC sputtering was used as the film forming apparatus, and InSnO was used as the target material. Film formation was performed with a degree of vacuum of 0.4 Pa and introduction gases of Ar and O ₂ to produce an ITO film having a thickness of 100 nm.
・ Production of metal electrodes (Al) (deposition conditions)
A resistance heating vapor deposition apparatus was used as a film forming apparatus, and high-purity Al was used as a raw material. Film formation was performed at a vacuum degree of 1.0 × 10 ⁻⁵ Pa, and an Al film having a thickness of 25 nm was produced.
・ Production of silicon compounds (SiOx, SiNx, SiOxNy) as gas barrier layers (deposition conditions)
ECR (electron cyclone resonance) was used as the film forming apparatus, and Si was used as the target material. A silicon compound film having a thickness of 10 to 150 nm was formed by forming a film with a degree of vacuum of 0.2 Pa and introduction gases of Ar, O ₂ and N ₂ . For the introduced gas, the gas used and its flow rate were appropriately adjusted for each sample.
-Measurement The water vapor transmission rate of the obtained sample was measured according to "JIS-Z0208". The measurement results (measured values) are shown below (the unit of water vapor transmission rate is [g / m ² · 24 hours]). The measurement conditions were 60 ° C. and 90% RH. In addition, the water vapor transmission rate of only the substrate or the electrode material alone formed on the substrate was also measured for reference, and the results are shown below. Furthermore, the water vapor transmission rate of the silicon compound film alone was calculated (converted) based on the following formula, and the obtained value was also written in the measurement result as a reference.
Conversion method of silicon compound film alone (1 / A) = (1 / B) + (1 / C)
However, A; measured value of (PET or PRT + ITO film) + silicon compound film B; measured value of (PET or PRT + ITO film) C: calculated (converted) value of silicon compound film alone

Water vapor transmission rate Sample composition Measured value Silicon compound
Film alone PET / ITO / SiOx (film thickness 70 nm): 0.04 0.04
PET / ITO / SiNx (film thickness 40 nm); 0.21 0.23
PET / ITO / SiOxNy (film thickness 40 nm); 0.12 0.12
PET / SiOx (film thickness 70 nm): 1.76 2.18
PET / SiNx (film thickness 40 nm); 0.45 0.47
PET / SiOxNy (film thickness 40 nm); 0.29 0.30
PET / Al / SiOx; 0.41 0.81
PET; 9.19 −
PET / Al (film thickness 25 nm); 0.81 −
PET / ITO (film thickness 100 nm); 3.13 −

  The refractive index of the silicon compound film was measured with an automatic ellipsometer “NARY-102” (manufactured by Fibrabo Inc.) at a measurement wavelength region of 632 nm. SiOx was 1.43, SiNx was 1.99, and SiOxNy was 1. .65. (However, the refractive index of SiOxNy can be arbitrarily changed by changing its composition.)

"Experiment 2"
The film thickness dependency of the silicon compound film (SiOx) was measured by changing the film thickness of the silicon compound film (SiOx) and measuring the water vapor transmission rate in the same manner as in Example 1. The obtained results are shown below. Note that the silicon compound film (SiOx) is not directly formed on the substrate (PET), but the previous example (SiOx film thickness is 70 nm) formed through the ITO film is also shown. Moreover, the obtained result is also shown in FIG. 13 as a graph.
Water vapor transmission rate Sample composition Measured value Silicon compound
Film alone PET / ITO / SiOx (film thickness 70 nm): 0.04 0.04
PET / SiOx (film thickness 10 nm); 9.14 1582.46
PET / SiOx (film thickness 30 nm); 8.55 121.63
PET / SiOx (film thickness 50 nm); 3.68 6.14
PET / SiOx (film thickness 70 nm); 1.76 2.18
PET / SiOx (film thickness 100 nm); 0.47 0.49
PET / SiOx (film thickness 150 nm); 0.45 0.47
From the obtained results, the water vapor transmission rate is the same when the silicon compound film (SiOx) is formed through the ITO film as shown in FIG. Was found to be much lower. From this, it was found that the silicon compound film (SiOx) is formed on the ITO film rather than directly on the substrate (PET), and the film quality becomes denser and the gas barrier property is improved.

It is a schematic diagram which shows the wiring structure of EL display apparatus of this invention. It is a top view which shows typically the structure of the EL display apparatus of this invention. It is sectional drawing which follows the AB line | wire of FIG. It is sectional drawing which follows the CD line of FIG. It is a principal part expanded sectional view of FIG. It is sectional drawing explaining the manufacturing method of EL display apparatus in order of a process. FIG. 7 is a cross-sectional view for explaining a step following the step in FIG. 6. FIG. 8 is a cross-sectional view for explaining a step following the step in FIG. 7. FIG. 9 is a cross-sectional view for explaining a step following the step in FIG. 8. FIG. 10 is a cross-sectional view for explaining a step following the step in FIG. 9. It is a principal part expanded sectional view of the other EL display apparatus of this invention. (A)-(c) is a perspective view which shows the electronic device of this invention. It is a graph which shows the film thickness dependence of a silicon compound film.

Explanation of symbols

1 EL display device (electro-optical device), 23 pixel electrode (first electrode),
30 gas barrier layer, 50 cathode (second electrode), 60 light emitting layer (functional layer),
200 substrate, 201 enclosing member, 204 protective layer, 205 buffer layer,
206 Surface protective layer

Claims (8)

An element region in which a plurality of unit circuits each including an element including a functional layer sandwiched between a first electrode and a second electrode and a switching element for driving the element are formed on a substrate; ,
A dummy region in which a functional layer constituting the element is disposed and formed outside the element region;
Of the dummy region, covering the side of the outer peripheral side of the functional layer included in the element closest to the outer peripheral portion of the base, a surrounding member provided on the base;
A gas barrier layer covering the second electrode,
A side portion on the outer peripheral side of the surrounding member is covered with the second electrode,
An electro-optical device, wherein the gas barrier layer is in contact with the substrate.   2. The electro-optical device according to claim 1, wherein a portion of the gas barrier layer that is in contact with the base body and the second electrode is made of a silicon compound.   The electro-optical device according to claim 2, wherein a portion of the gas barrier layer that is in contact with the base and the second electrode is made of silicon oxynitride.   The gas barrier layer includes at least a layer made of silicon oxynitride provided on the second electrode side and a layer made of silicon oxide provided on the layer. The electro-optical device according to any one of the above.   The electro-optical device according to claim 1, wherein the gas barrier layer is made of silicon oxynitride, and the oxygen concentration on the second electrode side is lower than the oxygen concentration on the outside.   The electro-optical device according to claim 1, wherein at least a surface side in contact with the gas barrier layer of the second electrode is made of an inorganic oxide.   The electro-optical device according to claim 1, wherein an angle formed between the surface forming the outer portion of the enclosing member and the surface of the base is 110 degrees or more. An electronic apparatus comprising the electro-optical device according to claim 1.

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