JP2005223279A - Chip-type electronic component and its manufacturing method - Google Patents

Chip-type electronic component and its manufacturing method Download PDF

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JP2005223279A
JP2005223279A JP2004032524A JP2004032524A JP2005223279A JP 2005223279 A JP2005223279 A JP 2005223279A JP 2004032524 A JP2004032524 A JP 2004032524A JP 2004032524 A JP2004032524 A JP 2004032524A JP 2005223279 A JP2005223279 A JP 2005223279A
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chip
type electronic
electronic component
coil
manufacturing
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Hisashi Katsurada
寿 桂田
Kanji Tanaka
寛司 田中
Yoichiro Ito
陽一郎 伊藤
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To obtain a chip-type electronic component and its manufacturing method, in which the variations in the serial resistances can be suppressed by suppressing the generation of a grain boundary across a linear conductor built into a ceramic substrate. <P>SOLUTION: An inductor comprises a ceramic substrate 10, a coil 15 made of a metal wire built in the substrate 10, and external electrodes 20, 20 formed on the surface of the substrate 10 and connected with the coil 15. The coil 15 contains 99.99 wt.% or higher Ag, and contains at least any one from among Fe, Cr, Co, Ni, Cu, Pb, Bi as an impurity, wherein the total amount of Fe, Cr, Co, Ni, Cu, Pb, Bi is 100 wt.ppm or lower. At least all of single Fe, Cr, Co, Ni, Cu, Pb, Bi is 60 wt.ppm or lower. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、チップ型電子部品及びその製造方法、詳しくは、チョークコイルやノイズフィルタなどのインダクタであるチップ型電子部品及びその製造方法に関する。   The present invention relates to a chip-type electronic component and a manufacturing method thereof, and more particularly to a chip-type electronic component that is an inductor such as a choke coil and a noise filter and a manufacturing method thereof.

従来から、コモンモードチョークコイルやノイズフィルタなどに使用されるチップ型インダクタとして種々のものが提供されており、その一例として特許文献1に記載のチップ型インピーダンス素子を挙げることができる。   Conventionally, various types of chip type inductors used for common mode choke coils, noise filters, and the like have been provided, and the chip type impedance element described in Patent Document 1 can be given as an example.

このチップ型インピーダンス素子は、セラミック基体にAgからなる導体を内蔵させたもので、Agからなる導体の平均粒径を線径の1/2以下とし、かつ、導体がNi,Cu,Crの少なくとも一つを0.01〜1重量%含むことによって直流抵抗を安定化させることが開示されている。   This chip-type impedance element has a conductor made of Ag incorporated in a ceramic base, the average particle diameter of the conductor made of Ag is ½ or less of the wire diameter, and the conductor is at least of Ni, Cu, Cr. It is disclosed that the direct current resistance is stabilized by including 0.01 to 1% by weight of one.

しかしながら、特許文献1に記載の如く、導体の平均粒径を制御したとしても、導体の長さ方向に対して横断した粒界が発生してしまい、直流抵抗の安定化は困難である。即ち、図4(A)に示すようにAgからなる導体1に断線の起因となる横断粒界2が生じると、図4(B)に示すように導体1のずれが発生し、直流抵抗が安定しなくなる。
特開平11−97247号公報
However, as described in Patent Document 1, even if the average particle diameter of the conductor is controlled, a grain boundary transverse to the length direction of the conductor is generated, and it is difficult to stabilize the DC resistance. That is, as shown in FIG. 4 (A), when a transverse grain boundary 2 that causes disconnection occurs in the conductor 1 made of Ag, the conductor 1 is displaced as shown in FIG. It becomes unstable.
Japanese Patent Laid-Open No. 11-97247

そこで、本発明の目的は、セラミック基体に内蔵された線状の導体に横断する粒界の発生を抑止して直流抵抗のばらつきを抑制することのできるチップ型電子部品及びその製造方法を提供することにある。   SUMMARY OF THE INVENTION An object of the present invention is to provide a chip-type electronic component capable of suppressing the occurrence of grain boundaries crossing a linear conductor built in a ceramic substrate and suppressing variations in DC resistance, and a method for manufacturing the same. There is.

以上の目的を達成するため、本発明に係るチップ型電子部品は、セラミック基体と、前記セラミック基体に内蔵され金属線からなる内部導体と、前記セラミック基体の表面に形成され前記内部導体と接続された外部電極とを備えたチップ型電子部品において、前記金属線は、Agを99.99重量%以上含み、少なくともFe,Cr,Co,Ni,Cu,Pb,Biのいずれかを不純物として含み、Fe,Cr,Co,Ni,Cu,Pb,Biの総量が100重量ppm以下であり、かつ、少なくともFe,Cr,Co,Ni,Cu,Pb,Biのいずれもが単独で60重量ppm以下であることを特徴とする。   In order to achieve the above object, a chip-type electronic component according to the present invention includes a ceramic base, an internal conductor made of a metal wire built in the ceramic base, and formed on the surface of the ceramic base and connected to the internal conductor. In the chip-type electronic component provided with the external electrode, the metal wire contains 99.99% by weight or more of Ag, and contains at least one of Fe, Cr, Co, Ni, Cu, Pb, Bi as an impurity, The total amount of Fe, Cr, Co, Ni, Cu, Pb, Bi is 100 ppm by weight or less, and at least all of Fe, Cr, Co, Ni, Cu, Pb, Bi is 60 ppm by weight or less. It is characterized by being.

本発明に係るチップ型電子部品にあっては、Agからなる内部導体の不純物(基体焼結時に内部導体のAgの結晶性に影響を与える金属不純物を意味する)の総量が0.001重量%を超えないように調製し、かつ、これらの金属不純物のいずれもが単独で60重量ppm以下であるように調製したため、セラミック基体の焼結時において内部導体をその長さ方向に対して横断する粒界の成長が抑止されて直流抵抗のばらつきが抑制され、不良品の発生率を0%までに低下させることができる。   In the chip-type electronic component according to the present invention, the total amount of impurities of the inner conductor made of Ag (meaning metal impurities that affect the crystallinity of Ag of the inner conductor when the substrate is sintered) is 0.001% by weight. The internal conductor is crossed with respect to the length direction during the sintering of the ceramic substrate because all of these metal impurities are prepared so as to be not more than 60 ppm by weight. Grain boundary growth is suppressed, variation in DC resistance is suppressed, and the incidence of defective products can be reduced to 0%.

本発明に係るチップ型電子部品の製造方法は、前記チップ型電子部品の製造方法であって、セラミックスラリーを調製する工程と、前記金属線を装填した成形型に前記セラミックスラリーを注入して湿式プレス成形して前記セラミック基体を形成する工程と、前記セラミック基体を焼結する工程と、前記セラミック基体の表面に前記外部電極を形成する工程とを備えたことを特徴とする。   The method for manufacturing a chip-type electronic component according to the present invention is a method for manufacturing the chip-type electronic component, comprising the steps of preparing a ceramic slurry, and injecting the ceramic slurry into a mold loaded with the metal wire. The method includes a step of press forming to form the ceramic substrate, a step of sintering the ceramic substrate, and a step of forming the external electrode on the surface of the ceramic substrate.

本発明に係る製造方法によれば、直流抵抗のばらつきが抑制されて不良品の発生率の極めて低いチップ型電子部品を効率よく製造することができる。   According to the manufacturing method of the present invention, it is possible to efficiently manufacture a chip-type electronic component in which variation in DC resistance is suppressed and the occurrence rate of defective products is extremely low.

以下、本発明に係るチップ型電子部品及びその製造方法の実施形態について、添付図面を参照して説明する。   Embodiments of a chip-type electronic component and a manufacturing method thereof according to the present invention will be described below with reference to the accompanying drawings.

図1に本発明の一実施例であるチップ型電子部品を示す。この電子部品はインダクタであって、フェライトなどからなる直方体形状のセラミック基体10に、Agからなるコイル15を内部導体として内蔵し、セラミック基体10の両端部分にコイル15の両端部と電気的に接続された外部電極20,20を形成したものである。   FIG. 1 shows a chip-type electronic component according to an embodiment of the present invention. This electronic component is an inductor, in which a coil 15 made of Ag is incorporated as an internal conductor in a rectangular parallelepiped ceramic base 10 made of ferrite or the like, and is electrically connected to both ends of the coil 15 at both ends of the ceramic base 10. The formed external electrodes 20 and 20 are formed.

コイル15は、直径0.2mmのAg線をコイル径2mm、線間ピッチ0.4mmで、6ターン分巻回したものであり、その成分、特に基体焼結時にAgの結晶性に影響を与える不純物(Fe,Cr,Co,Ni,Cu,Pb,Bi)の含有量については後述する。   The coil 15 is obtained by winding an Ag wire having a diameter of 0.2 mm for 6 turns with a coil diameter of 2 mm and a pitch between wires of 0.4 mm, and affects the component, particularly the crystallinity of Ag during sintering of the substrate. The content of impurities (Fe, Cr, Co, Ni, Cu, Pb, Bi) will be described later.

ここで、前記インダクタの製造方法について本発明者らが行った一例を具体的な数値を挙げて説明する。   Here, an example of the inductor manufacturing method performed by the present inventors will be described with specific numerical values.

まず、セラミックスラリーを調製した。即ち、ポットに、NiCuZn系フェライトの原料粉末(粉末粒径2μm、比表面積2.5m2/g)と以下に示す添加剤と水とを投入し、ボールミルで20時間混合し、セラミックスラリーとした。 First, a ceramic slurry was prepared. That is, NiCuZn ferrite raw material powder (powder particle size 2 μm, specific surface area 2.5 m 2 / g), the following additives and water were added to the pot, and mixed in a ball mill for 20 hours to obtain a ceramic slurry. .

分散剤:ポリオキシアルキレングリコール、原料粉末重量に対して2.0%重量部
消泡剤:ポリエーテル系消泡剤、原料粉末重量に対して0.5%重量部
結合材:アクリル系バインダ、原料粉末重量に対して0.5%重量部
水:原料粉末重量に対して50%重量部
Dispersant: Polyoxyalkylene glycol, 2.0% by weight with respect to raw material powder weight Antifoam: Polyether-based antifoaming agent, 0.5% by weight with respect to raw material powder weight Binder: Acrylic binder, 0.5% by weight of raw material powder weight Water: 50% by weight of raw material powder weight

次に、第1の湿式プレス工程にて以下の成形体を得た。即ち、金型内に、前記セラミックスラリーを所定量投入し、水分のみ抜けるフィルタで蓋をした後、スラリーが漏れないようにパッキングした。そして、該スラリーに100kgf/cm2の圧力を5分間かけて水分を抜き、板状の成形体を得た。 Next, the following molded bodies were obtained in the first wet pressing step. That is, a predetermined amount of the ceramic slurry was put into a mold, covered with a filter that allows only moisture to escape, and then packed so as not to leak the slurry. Then, water was removed from the slurry at a pressure of 100 kgf / cm 2 for 5 minutes to obtain a plate-like molded body.

次に、前記板状の成形体上にコイル15を設置した。コイル15の変形を防ぐためには、コイル15の軸方向が水平に向く方向で設置することが望ましい。また、コイル15の位置ずれを防ぐために少量の接着剤又はスラリーでコイル15を固定することが望ましい。   Next, the coil 15 was installed on the plate-shaped molded body. In order to prevent deformation of the coil 15, it is desirable to install the coil 15 in a direction in which the axial direction of the coil 15 is horizontal. Further, in order to prevent displacement of the coil 15, it is desirable to fix the coil 15 with a small amount of adhesive or slurry.

次に、第2の湿式プレス工程にてコイル15を内蔵した成形体を得た。即ち、コイル15を固定した板状の前記成形体を金型内に設置し、前記セラミックスラリーを所定量投入し、水分のみ抜けるフィルタで蓋をした後、スラリーが漏れないようにパッキングした。そして、該スラリーに100kgf/cm2の圧力を5分間かけて水分を抜き、コイル15を内蔵した成形体を得た。 Next, the molded object which incorporated the coil 15 in the 2nd wet press process was obtained. That is, the plate-like molded body to which the coil 15 was fixed was placed in a mold, a predetermined amount of the ceramic slurry was put in, covered with a filter through which only moisture was removed, and then packed so that the slurry did not leak. Then, moisture was removed from the slurry at a pressure of 100 kgf / cm 2 for 5 minutes to obtain a molded body in which the coil 15 was incorporated.

前記第2の湿式プレス工程で得られた成形体を40℃で50時間乾燥させた。このように乾燥した成形体をアルミナサヤに収容し、900℃で2時間焼結した。この焼結体をカットもしくは研磨し、所定の形状に仕上げた。   The molded body obtained in the second wet pressing step was dried at 40 ° C. for 50 hours. The molded body thus dried was placed in an alumina sheath and sintered at 900 ° C. for 2 hours. The sintered body was cut or polished and finished into a predetermined shape.

次に、所定形状の前記焼結体の表面両端部分に、コイル15の両端部と電気的に接続した外部電極20,20を形成し、インダクタを得た。   Next, external electrodes 20 and 20 electrically connected to both end portions of the coil 15 were formed on both end portions of the surface of the sintered body having a predetermined shape, thereby obtaining an inductor.

本発明者らは、コイル15のAg線に関して、その不純物(Fe,Cr,Co,Ni,Cu,Pb,Bi)の総量を種々に変更して、かつ、不純物単独での含有量を種々に変更して前記インダクタを同一条件で製作し、その直流抵抗を測定した。   The inventors of the present invention have variously changed the total amount of impurities (Fe, Cr, Co, Ni, Cu, Pb, Bi) with respect to the Ag wire of the coil 15 and variously changed the content of the impurities alone. The inductor was manufactured under the same conditions by changing, and the DC resistance was measured.

Ag線に含まれる不純物の総量に関しては、図2のグラフに示すように、不純物の総量が100重量ppm以下の場合に直流抵抗のばらつきがなくなり、不良率が0%になった。また、不純物単独での含有量に関しては、図3(A),(B)のグラフに示すように、概ね60重量ppm以下の場合に直流抵抗のばらつきがなくなり、不良率が0%になった。   With respect to the total amount of impurities contained in the Ag line, as shown in the graph of FIG. 2, when the total amount of impurities was 100 ppm by weight or less, the DC resistance did not vary and the defect rate became 0%. As for the content of impurities alone, as shown in the graphs of FIGS. 3 (A) and 3 (B), there was no variation in DC resistance when the content was approximately 60 ppm by weight or less, and the defect rate was 0%. .

ここで、直流抵抗が不良とは、測定された直流抵抗値が設計値に対して50%以上大きい場合を意味する。   Here, the DC resistance is defective means that the measured DC resistance value is 50% or more larger than the design value.

コイル15の材料として、Agに不純物(少なくともFe,Cr,Co,Ni,Cu,Pb,Biの1種)が添加されると、結晶粒界が存在するAgの再結晶温度が高くなり、焼結時における結晶の成長が遅くなる。Agを内部導体としたフェライトの焼結は、通常、850〜940℃、約2時間である。温度が850℃を下回るとフェライトが焼結しないため、十分な強度や焼結密度が得られない。しかし、通常の焼結温度で、かつ、不純物の含有量が多いと、Agの拡散が進んでAg線の長さ方向に対して横断した粒界(図4参照)が発生し、直流抵抗が上昇する。   When an impurity (at least one of Fe, Cr, Co, Ni, Cu, Pb, and Bi) is added to Ag as the material of the coil 15, the recrystallization temperature of Ag where grain boundaries exist increases, Crystal growth at the time of settling is slowed down. Sintering of ferrite with Ag as an internal conductor is usually 850 to 940 ° C. for about 2 hours. When the temperature is lower than 850 ° C., ferrite is not sintered, so that sufficient strength and sintered density cannot be obtained. However, at a normal sintering temperature and a large impurity content, the diffusion of Ag progresses and a grain boundary (see FIG. 4) transverse to the length direction of the Ag wire is generated, and the DC resistance is reduced. Rise.

従って、850〜940℃の温度範囲でAg線の長さ方向に対して横断した粒界を発生させないためには、不純物の総量及び単独での含有量を調整してAgの再結晶温度を低下させ、焼結温度での粒界を少なくさせる必要がある。   Therefore, in order not to generate a grain boundary transverse to the length direction of the Ag line in the temperature range of 850 to 940 ° C., the total amount of impurities and the content alone are adjusted to lower the recrystallization temperature of Ag. It is necessary to reduce the grain boundary at the sintering temperature.

本発明者らの実験によれば、図2及び図3に示したように、Ag線は、Agを99.99重量%以上含み、少なくともFe,Cr,Co,Ni,Cu,Pb,Biのいずれかを不純物として含み、該不純物の総量が100重量ppm以下であり、かつ、少なくともFe,Cr,Co,Ni,Cu,Pb,Biのいずれもが単独で60重量ppm以下であれば、直流抵抗の不良率が0%になった。   According to the experiments by the present inventors, as shown in FIGS. 2 and 3, the Ag wire contains 99.99% by weight or more of Ag and contains at least Fe, Cr, Co, Ni, Cu, Pb, and Bi. If any of them is contained as impurities, the total amount of the impurities is 100 ppm by weight or less, and at least all of Fe, Cr, Co, Ni, Cu, Pb, and Bi are independently 60 ppm by weight or less, direct current The defect rate of resistance became 0%.

このような効果は、Ag線に含まれる前記不純物の量を前述の如く調整することにより、Ag線の長さ方向に対して横断した粒界の発生が抑止され、Ag線のずれがなくなったことに起因する。   By adjusting the amount of the impurity contained in the Ag line as described above, such an effect is suppressed by preventing the occurrence of a grain boundary crossing the length direction of the Ag line and eliminating the deviation of the Ag line. Due to that.

本発明において、不純物とはFe,Cr,Co,Ni,Cu,Pb,Biであり、これらの元素の少なくとも一つを含む総量の下限値は特に規定しないが、1重量ppm以上であることが好ましい。また、不純物である各元素の単独含有量の下限値もそれぞれが1重量ppmであることが好ましい。   In the present invention, the impurities are Fe, Cr, Co, Ni, Cu, Pb, Bi, and the lower limit of the total amount including at least one of these elements is not particularly specified, but it is 1 ppm by weight or more. preferable. Moreover, it is preferable that the lower limit of individual content of each element which is an impurity is also 1 ppm by weight, respectively.

(他の実施例)
なお、本発明に係るチップ型電子部品及びその製造方法は前記実施例に限定するものではなく、その要旨の範囲内で種々に変更できる。
(Other examples)
The chip-type electronic component and the manufacturing method thereof according to the present invention are not limited to the above-described embodiments, and can be variously modified within the scope of the gist.

特に、前記実施例で挙げた材料、数値はあくまで一例であり、例えば、セラミックスラリーの調製工程において添加する結合材としては、アクリル系バインダの他に、酢酸ビニル系バインダなどを用いることができる。   In particular, the materials and numerical values given in the above examples are merely examples. For example, as the binder added in the process of preparing the ceramic slurry, a vinyl acetate binder can be used in addition to the acrylic binder.

本発明に係るチップ型電子部品の一実施例(インダクタ)を示す斜視図である。It is a perspective view which shows one Example (inductor) of the chip-type electronic component which concerns on this invention. 前記インダクタの内部導体(Ag線)における不純物の総量に対する直流抵抗の不良率を示すグラフである。It is a graph which shows the defect rate of DC resistance with respect to the total amount of the impurity in the inner conductor (Ag line) of the inductor. 前記インダクタの内部導体(Ag線)における不純物単独での含有量に対する直流抵抗の不良率を示すグラフである。It is a graph which shows the defect rate of DC resistance with respect to content in the impurity alone in the inner conductor (Ag line) of the inductor. 前記インダクタの内部導体(Ag線)における粒界と断線類似状態とを模式的に示す説明図である。It is explanatory drawing which shows typically the grain boundary and disconnection similar state in the internal conductor (Ag line) of the said inductor.

符号の説明Explanation of symbols

10…セラミック基体
15…コイル(内部導体)
20…外部電極
10 ... ceramic substrate 15 ... coil (internal conductor)
20 ... External electrode

Claims (2)

セラミック基体と、前記セラミック基体に内蔵され金属線からなる内部導体と、前記セラミック基体の表面に形成され前記内部導体と接続された外部電極とを備えたチップ型電子部品において、
前記金属線は、Agを99.99重量%以上含み、少なくともFe,Cr,Co,Ni,Cu,Pb,Biのいずれかを不純物として含み、Fe,Cr,Co,Ni,Cu,Pb,Biの総量が100重量ppm以下であり、かつ、少なくともFe,Cr,Co,Ni,Cu,Pb,Biのいずれもが単独で60重量ppm以下であること、
を特徴とするチップ型電子部品。
In a chip-type electronic component comprising a ceramic base, an internal conductor made of a metal wire built in the ceramic base, and an external electrode formed on the surface of the ceramic base and connected to the internal conductor,
The metal wire contains 99.99% by weight or more of Ag and contains at least one of Fe, Cr, Co, Ni, Cu, Pb, and Bi as an impurity, Fe, Cr, Co, Ni, Cu, Pb, Bi And the total amount of Fe, Cr, Co, Ni, Cu, Pb, Bi alone is 60 ppm by weight or less.
Chip-type electronic components characterized by
請求項1に記載のチップ型電子部品の製造方法であって、
セラミックスラリーを調製する工程と、
前記金属線を装填した成形型に前記セラミックスラリーを注入して湿式プレス成形して前記セラミック基体を形成する工程と、
前記セラミック基体を焼結する工程と、
前記セラミック基体の表面に前記外部電極を形成する工程と、
を備えたことを特徴とするチップ型電子部品の製造方法。
It is a manufacturing method of the chip type electronic component according to claim 1,
Preparing a ceramic slurry;
Injecting the ceramic slurry into a mold loaded with the metal wire and wet pressing to form the ceramic substrate;
Sintering the ceramic substrate;
Forming the external electrode on the surface of the ceramic substrate;
A method for manufacturing a chip-type electronic component, comprising:
JP2004032524A 2004-02-09 2004-02-09 Chip-type electronic component and its manufacturing method Pending JP2005223279A (en)

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JP2007297021A (en) * 2006-05-08 2007-11-15 Toyota Motor Corp Vehicular steering system
DE102017121157A1 (en) * 2017-08-09 2019-02-14 Endress+Hauser Flowtec Ag Coil and transducer with such a coil

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JPS61163504A (en) * 1985-01-14 1986-07-24 住友電気工業株式会社 Conductor for image display device and acoustic device
JPH05291066A (en) * 1992-04-14 1993-11-05 Tokin Corp Inductor and manufacture thereof
JPH108165A (en) * 1996-06-21 1998-01-13 Dowa Mining Co Ltd High-purity silver wire for recording or acoustic or image transmission
JPH1197247A (en) * 1997-09-22 1999-04-09 Matsushita Electric Ind Co Ltd Chip type impedance element
JPH11329873A (en) * 1998-05-08 1999-11-30 Murata Mfg Co Ltd Inductor and manufacture thereof
JPH11339568A (en) * 1998-05-28 1999-12-10 Mitsubishi Materials Corp Audio wire conductor

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JPS61163504A (en) * 1985-01-14 1986-07-24 住友電気工業株式会社 Conductor for image display device and acoustic device
JPH05291066A (en) * 1992-04-14 1993-11-05 Tokin Corp Inductor and manufacture thereof
JPH108165A (en) * 1996-06-21 1998-01-13 Dowa Mining Co Ltd High-purity silver wire for recording or acoustic or image transmission
JPH1197247A (en) * 1997-09-22 1999-04-09 Matsushita Electric Ind Co Ltd Chip type impedance element
JPH11329873A (en) * 1998-05-08 1999-11-30 Murata Mfg Co Ltd Inductor and manufacture thereof
JPH11339568A (en) * 1998-05-28 1999-12-10 Mitsubishi Materials Corp Audio wire conductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007297021A (en) * 2006-05-08 2007-11-15 Toyota Motor Corp Vehicular steering system
DE102017121157A1 (en) * 2017-08-09 2019-02-14 Endress+Hauser Flowtec Ag Coil and transducer with such a coil
US11783976B2 (en) 2017-08-09 2023-10-10 Endress+Hauser Flowtec Ag Coil and transformer having such a coil

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