JP2005123407A - Method for fabricating chip-type electronic component external electrode - Google Patents

Method for fabricating chip-type electronic component external electrode Download PDF

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Publication number
JP2005123407A
JP2005123407A JP2003356894A JP2003356894A JP2005123407A JP 2005123407 A JP2005123407 A JP 2005123407A JP 2003356894 A JP2003356894 A JP 2003356894A JP 2003356894 A JP2003356894 A JP 2003356894A JP 2005123407 A JP2005123407 A JP 2005123407A
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Prior art keywords
chip
electronic component
type electronic
paste
conductive paste
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JP2003356894A
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Japanese (ja)
Inventor
Kenichi Aoki
Tsunehiro Honda
Kiyoshi Nakano
Tetsuya Tomita
清 中野
哲弥 冨田
常裕 本多
健一 青木
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Murata Mfg Co Ltd
株式会社村田製作所
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Priority to JP2003356894A priority Critical patent/JP2005123407A/en
Publication of JP2005123407A publication Critical patent/JP2005123407A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • H01G4/232Terminals electrically connecting two or more layers of a stacked or rolled capacitor

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for fabricating chip-type electronic component external electrodes consistent in sidewise dimensions, with the film thickness thin and uniform at the end section and on the side sections. <P>SOLUTION: The method for fabricating chip-type electronic component external electrodes comprises: a step wherein a conductive paste is applied to the end of a chip-type electronic component element; a step wherein the end of the chip-type electronic component element applied with the conductive paste is pushed into an elastic body having an open hole, and the element is then drawn out of the elastic body so that the end is removed of the excess conductive paste when the excess paste is absorbed by the opening hole in the elastic body; and a step wherein the conductive paste is sintered with its excess portion removed after application to the chip-type electronic component element. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for forming an external electrode of a chip-type electronic component such as a multilayer ceramic capacitor or a chip resistor.

  Conventionally, as a method for forming external electrodes of chip-type electronic components such as multilayer ceramic capacitors and chip resistors, a conductive paste film is formed on a planar support in advance by applying a conductive paste to a predetermined thickness, After the conductive paste is applied to the chip-type electronic component element with a predetermined thickness by dipping in the conductive paste film until the end of the mold-type electronic component element comes into contact with the planar support, it is dried. Then, a method for firing is proposed.

  However, in the method as described above, it is extremely difficult to form a conductive paste film with a thin and uniform film thickness at the end of the chip-type electronic component element, and a predetermined width and thickness are formed at the end of the chip-type electronic component element. When an external electrode is to be formed, a conductive paste more than necessary is applied and adhered, and flows until it is solidified. As a result, as shown in the cross-sectional view of the chip-type electronic component 1 in FIG. As for the film thickness of the electrode 2, the film thickness 3 at the edge portion is thinner than the film thickness 4 at the side surface portion and the film thickness 5 at the end surface portion, and cracks are likely to occur at the edge portion in the firing process.

For this reason, as a solution to these problems, a method in which a chip-type electronic component element is pushed into an elastic body in which a conductive paste has been infiltrated in advance and the conductive paste is applied so as to be 10 nm to 2 μm after firing (patent document) 1), or after applying a conductive paste larger than the necessary thickness to the end of the chip-type electronic component element in advance, the excess conductive paste is removed by transferring it to a support having a roughened surface. A method for forming a conductive paste film (see Patent Document 2), and similarly, after applying a conductive paste having a thickness greater than the necessary thickness, the excess is removed by transferring it to a # 200 to # 20 nylon mesh to obtain a thickness. A method of forming a uniform conductive paste film (see Patent Document 3) has been proposed.
Japanese Patent Laid-Open No. 10-32460 JP-A-8-130170 Japanese Patent No. 2873345

  However, in the method proposed by Patent Document 1, the paste content varies depending on the position of the elastic body, or the elastic body is not easily deformed when the chip-type electronic component element is pushed in. Part dimensions are likely to fluctuate. In addition to causing appearance problems due to the variation in dimensions, especially when the external electrode side surface dimensions are different at both ends of the component, when mounting a chip-type electronic component on a board by reflow soldering, the molten solder and the component Different surface tensions acting on the external electrodes at both ends cause a so-called tombstone phenomenon (or Manhattan phenomenon) in which the end on the side with the smaller surface tension is separated from the substrate and the chip-type electronic component stands upright with respect to the substrate. It becomes easy.

  In addition, in the methods proposed by Patent Documents 2 and 3, although the electrode thickness and shape of the end surface portion of the chip-type electronic component can be controlled, the conductive paste applied to the side surface portion is used as a jig for scraping. Since the direct contact ratio is small, the conductive paste on the side surface cannot be efficiently scraped off, and the conductive paste film on the side surface becomes thick. As a result, in addition to causing problems in appearance, in the firing step, the amount of shrinkage of the conductive paste film is increased, so that stress due to the shrinkage is loaded on the chip type electronic component element, There has been a problem that cracks are likely to occur in the outer peripheral portion of the chip-type electronic component starting from the end portion of the external electrode.

  Accordingly, an object of the present invention is to solve the above-described problems, that is, the formation of an external electrode that has a constant side surface dimension, a thin film thickness at the end surface and the side surface, and is uniform and free from structural defects. Is to try to provide a way.

  In order to solve the above-mentioned technical problem, the external electrode forming method for a chip-type electronic component according to the present invention includes a step of applying a conductive paste to an end portion of a chip-type electronic component element, and a chip type coated with the conductive paste. By pushing the end portion of the electronic component element into the elastic body having open pores and then pulling it away from the elastic body, excess conductive paste attached to the end portion of the chip-type electronic component element is removed from the elastic body. A step of absorbing and removing the open pores, and a step of sintering the conductive paste that has been applied to the chip-type electronic component element and from which the excess has been removed.

  In this invention, when the end portion of the chip-type electronic component element to which the conductive paste is applied is pushed into the elastic body having open pores, the elastic body is deformed to adhere to the side surface portion of the chip-type electronic component element. Also contact the conductive paste.

  Therefore, when separating the chip-type electronic component element from the elastic body, it is possible to absorb the excess conductive paste adhering to the side surface portion as well as the end surface portion into the open pores of the elastic body, Excess conductive paste can be efficiently removed.

  Therefore, the variation in the amount of the conductive paste applied to the end portion is reduced, and the variation in the dimension of the side surface portion of the external electrode can be suppressed.

  As a result, appearance problems such as abnormal external electrode dimensions and shapes can be resolved, and tombstone phenomenon (or Manhattan phenomenon) occurs when chip-type electronic components are mounted on a board by reflow soldering. Can be suppressed.

  In addition, since the thickness of the conductive paste film applied to the end of the chip-type electronic component can be reduced as a whole, the amount of shrinkage of the conductive paste film in the baking process is reduced, and cracks are caused by the shrinkage of the conductive paste film. Can be suppressed.

  A method for forming an external electrode of a chip-type electronic component according to the present invention will be described with reference to the drawings.

  FIG. 2 is a process conceptual diagram showing the external electrode forming method of the chip-type electronic component of the present invention.

  A conductive paste film 10 adjusted to have a predetermined thickness is formed on the planar support 9. After immersing the end portion of the chip-type electronic component element 11 in the conductive paste film 10, the conductive paste coating film 12 is formed on the end portion of the chip-type electronic component element by pulling up. Before the conductive paste coating 12 is dried and solidified, the end of the chip-type electronic component element 11 is pushed into the elastic body 13 having open pores, and then separated from the elastic body 13, thereby the chip-type electronic component Excess conductive paste adhering to the end portion of the element is absorbed and removed by the open pores of the elastic body 13, and the side surface dimensions are constant, and the film thickness is thin and uniform at the end surface portion and the side surface portion. The conductive paste coating film 14 thus prepared is obtained.

  Thereafter, the conductive paste coating film 14 is sintered to obtain a chip-type electronic component by the external electrode forming method according to the present invention.

  Hereinafter, embodiments of the external electrode forming method for a chip-type electronic component according to the present invention will be described based on examples.

  80 parts by weight of Ni powder having an average particle size of 0.5 μm, 20 parts by weight of powdery base material having the same composition as the dielectric ceramic, and α-terpineol as a solvent, and three kinds of acrylics having different molecular weights as binders By mixing and dispersing 30 parts by weight of a varnish using a resin, a cellulose-based resin, and a mixture thereof using three rolls, five types of Ni having viscosities of 2, 11, 50, 10 and 12 Pa · s, respectively. A paste was prepared.

  A chip-type electronic component (hereinafter referred to as chip) element (length: 4.0 mm, width: 2.0 mm, height: 1) before firing, in which an edge portion is rounded by barrel processing and an internal electrode is exposed, which is manufactured by a known method 100 mm) was fixed on the adhesive plate.

  The Ni paste was adjusted to a thickness of 0.8 mm on a flat support, the pre-fired chip element was immersed at a rate of 0.2 mm / s, held for 5 seconds, The Ni paste was applied to the ends by pulling up at a speed of 2 mm / s.

  Before the applied Ni paste is dried and solidified, the chip element before firing is placed in a urethane sponge having a thickness of 5 mm, open pores having an average diameter of 150 μm, a rebound resilience of 30%, and an elongation of 100%. Pushed in at a speed of 5 mm / s, held for 5 seconds, and then pulled away at a speed of 0.5 mm / s, so that the Ni paste applied to the chip element before firing was absorbed into the pores of the urethane sponge and scraped off. . In addition, about the Ni paste whose viscosity is 50 Pa.s, scraping was performed twice and the sample which changed the film thickness of the paste coating film was also produced.

  When the pre-fired chip element is pushed into a urethane sponge, the applied Ni paste wets up to the predetermined external electrode side surface dimensions, and is applied when the pre-fired chip element is separated from the urethane sponge. The amount of pushing of the chip element before firing was adjusted so that the excess of the Ni paste was absorbed by the urethane sponge.

  After the applied Ni paste is dried at 120 ° C. for 30 minutes, Ni paste is applied to the other end face of the pre-fired chip element using the same method as described above, and dried under the same conditions. A Ni paste coating film was formed on both end portions of the element before firing.

The chip element before firing in which the Ni paste coating film was formed as described above was held in the atmosphere at 230 ° C. for 1 hour to remove the binder, and then a mixed gas of N 2 —H 2 —H 2 O was used. Thus, the chip element and the Ni paste coating film were fired at the same time in a reducing atmosphere in which the Ni internal electrode was not oxidized at 1300 ° C. for 1 hour.

  A plated film made of Ni and Sn was formed on the Ni external electrode after firing by a known method. The above operation was repeated 10 times to obtain a total of 1000 chips (samples 1-1 to 7) by the external electrode forming method of the present invention.

  Further, as a comparative example, a chip in which the Ni paste was infiltrated into the sponge surface and the Ni paste was applied by pressing the pre-fired chip element, and thereafter external chips were formed in the same manner as described above (Sample 1- 8) and after applying a Ni paste having a thickness greater than the necessary thickness, the surplus Ni paste is transferred to a support having a rough surface with a groove pitch of 0.3 mm and a groove depth of 0.2 mm on the surface. A chip (Sample 1-9) on which external electrodes were formed and a chip (Sample 1-10) on which external electrodes were formed in the same manner were transferred to a # 100 nylon mesh.

  The cross section of the chip thus obtained is mirror-polished, and as shown in FIG. 3, the edge film thickness 3 (A) and the side film thickness 4 (B) of the external electrode and their variations, the end film thickness 5 (C), side length 6 (E) and its variation, the rate of occurrence of cracks 7 at the edge, the rate of occurrence of cracks 8 at the side, and Sn-Pb eutectic solder paste, Investigate the rate of occurrence of tombstones when mounted on a land-designed substrate made of glass-epoxy resin composite with a length of 100mm, a width of 70mm, and a thickness of 1.6mm at 235 ° C in the atmosphere. The results are shown in Table 1. In addition, the crack generation rate in said A and E and each part was investigated about 10 pieces, and the tombstone occurrence rate was investigated about 100 chips.

  As shown in Samples 1-1, 2 and 4 to 6 in Table 1, the variation in the length E of the side surface of the external electrode by the external electrode forming method of the present invention is different from any Ni paste having a different viscosity due to the difference in the binder component. Even if it was used, it was sufficiently small in the same chip and between chips, and while the film thickness was thin as a whole, an external electrode with a small difference in film thickness between the edge portion, the side surface portion, and the end surface portion could be formed. .

  In particular, from Samples 1-1, 4 and 4, it was confirmed that it is preferable to use an acrylic resin as a binder because it is easier to ensure the film thickness of the edge portion than other parts.

  In addition, since the variation in the length of the side surface portion is small, it was possible to suppress the occurrence of tombstones during mounting.

  As shown in Sample 1-3, when a sufficient amount of Ni paste cannot be scraped by one scraping, and the Ni paste coating film becomes thick, cracks on the side surface occur. As shown in 1-4, it was confirmed that the occurrence of cracks can be suppressed as a desired coating film thickness by repeating scraping. At that time, the Ni paste adhering to and absorbed by the sponge is scraped off with a squeegee or the like to reduce the amount of Ni paste near the sponge surface, and then the next scraping is performed in order to keep the electrode film thickness constant. It was effective.

  By efficiently scraping off the excess Ni paste adhering to the chip element in this way, it is possible to form a thin external electrode even when using a highly viscous Ni paste that has been difficult to use in the past. As a result, it was possible to suppress the occurrence of edge cracks and side surface cracks that are likely to occur when the chip element and the external electrode are fired simultaneously.

  In addition, as shown in Sample 1-7, a sufficient effect could be obtained even if scraping was performed using a sponge in which Ni paste had been infiltrated in advance. Also in this case, as described above, scraping after reducing the amount of Ni paste near the sponge surface was effective for keeping the electrode film thickness constant.

  On the other hand, in the sample 1-8 in which the Ni paste was applied by impregnating the Ni paste into the sponge surface and pressing the chip element before firing, the variation in the side surface length E within the same chip and between the chips was large, and mounting by the reflow method Occasionally, the surface tension of the molten solder acting on the external electrode is likely to be different at both ends of the part, so that the occurrence rate of the tombstone phenomenon is increased.

  In Sample 1-9, after applying a conductive paste having a thickness greater than the required thickness, the excess conductive paste was transferred to a support having a roughened surface, and the variation in side surface length E was suppressed. The Ni paste applied to the part cannot be efficiently scraped off, and the Ni paste remains thick on the side surface part, so the rate of occurrence of cracks due to the shrinkage of the conductive paste coating film in the firing process increases. It was.

  Further, even in the sample 1-10 in which surplus conductive paste is transferred to a # 100 nylon mesh and variation in the side surface length E is suppressed, a thick Ni paste remains in the side surface portion. The incidence of cracks due to the shrinkage of the conductive paste coating film increased.

  As described above, it has been confirmed that the present invention is excellent in dimensional accuracy and is effective as an external electrode forming method for suppressing structural defects.

  In this example, a urethane sponge having a thickness of 5 mm, an open pore with an average diameter of 150 μm, a rebound resilience of 30%, and an elongation of 100% was used as the elastic body. The present invention is not limited to this, so long as it has open pores with an average diameter of 10 to 500 μm and can absorb a fluid with a viscosity of 1 to 50 Pa · s.

  Further, the indentation speed and the amount of indentation of the chip element can be usually obtained empirically, taking into account the wetting of the conductive paste and the amount absorbed by the elastic body, depending on the size of the chip and the material of the elastic body.

  Three varnishes, 30 parts by weight, using 70 parts by weight of Cu powder having an average particle size of 3 μm, 5 parts by weight of glass frit, α-terpineol as a solvent, and three kinds of acrylic resins having different molecular weights as binders. By mixing and dispersing using a roll, three types of Cu pastes having viscosities of 2, 10, and 45 Pa · s were produced.

  After firing, 100 chip elements (length: 3.2 mm, width: 1.6 mm, height: 1.1 mm) prepared by a known method and having no external electrode formed thereon were fixed on an adhesive plate.

  The Cu paste is adjusted to a thickness of 0.7 mm on a flat support, and the chip element is immersed at a speed of 0.2 mm / s, held for 5 seconds, and then 0.2 mm / The Cu paste was applied to the end by pulling up at a speed of s.

  Before the Cu paste was dried and solidified, the chip element was pushed into a urethane sponge having the same specifications as those used in Example 1 at a speed of 0.5 mm / s, held for 5 seconds, and then 0.5 mm / By pulling apart at a speed of s, the Cu paste applied to the chip element was absorbed into the pores of the urethane sponge and scraped off. In addition, about the Cu paste whose viscosity is 45 Pa.s, scraping was performed twice and the sample which changed the film thickness of the paste coating film was also produced.

  When the chip element is pushed into the urethane sponge, the applied Cu paste wets up to the predetermined external electrode side surface dimensions, and when the chip element is separated from the urethane sponge, the applied Cu paste The amount of indentation of the chip element was adjusted so that the surplus was absorbed by the urethane sponge.

  After the applied Cu paste is dried at 120 ° C. for 10 minutes, the other end face of the chip element is coated with the Cu paste using the same method as described above, and dried under the same conditions. Cu paste coating film was formed on both ends.

  The Cu paste coating film was baked on the chip element at 900 ° C. in an atmosphere controlled to an oxygen concentration of 10 ppm to form a Cu external electrode.

  A plated film made of Ni and Sn was formed on the Cu external electrode after firing by a known method. The above operation was repeated 10 times to obtain a total of 1000 chips (samples 2-1 to 4) by the external electrode forming method of the present invention.

  Further, as a comparative example, a chip (sample 2-5) in which the Cu paste was infiltrated into the sponge surface, the Cu paste was applied by pressing a chip element, and thereafter an external electrode was formed in the same manner as described above. After applying a conductive paste with a thickness greater than the required thickness, the excess conductive paste is transferred to a # 100 nylon mesh to form a Cu paste coating film that suppresses variations in side length E, and so on. Thus, a chip (Sample 2-6) having external electrodes formed thereon was obtained.

  Table 2 shows the results obtained by investigating the dimensions and variations of the external electrodes and the structural defects and mounting defects of the chip thus obtained in the same manner as in Table 1. In addition, for the chip in which the external electrode is formed by the present invention and the prior art, respectively, the land design is made with Cu foil using Sn-Pb eutectic solder paste, and the length is 100 mm, the width is 40 mm, and the thickness is 1.6 mm. After mounting on a substrate made of a glass-epoxy resin composite material at 235 ° C. in the air at a reflow method, 10 deflection tests are performed, and the amount of displacement until breakage based on the acoustic emission (AE) method is used as an index of deflection strength. FIG. 4 shows the result of examining the distribution and obtaining the distribution.

  As shown in Samples 2-1 to 4-2 in Table 2, the variation in the side surface length E of the external electrode by the external electrode forming method of the present invention is any Cu paste having a different viscosity due to the difference in the binder component. The external electrodes are sufficiently small in the same chip and between the chips, and an external electrode having a small difference in film thickness between the edge portion, the side surface portion, and the end surface portion can be formed while reducing the film thickness as a whole.

  As a result, it was possible to suppress the occurrence of tombstones during mounting and edge and side surface cracks.

  Further, as shown in Sample 2-4, by repeating scraping, it was possible to form a thin external electrode even with a high-viscosity Cu paste.

  Furthermore, as shown in the sample 2-2 in FIG. 4, the variation in the deflection strength could be reduced.

  On the other hand, in the sample 2-5 in which the Cu paste was applied by impregnating the Cu paste into the sponge surface and pressing the chip element, the variation in side surface length E within the same chip and between the chips was large, and during mounting by the reflow method, Since the surface tension of the molten solder acting on the external electrode tends to be different at both ends of the part, the incidence of tombstone phenomenon has increased. Further, as shown in FIG. 4, the variation in the flexural strength was also increased.

  Moreover, in the sample 2-6 in which the Cu paste coating film in which the variation in the side surface length E is suppressed is formed by transferring the surplus conductive paste to the mesh after applying the conductive paste of the necessary thickness or more, the side surface As shown in FIG. 4, the bending strength was reduced by increasing the thickness of the external electrode at the end portion and the end face and making it easier to concentrate stress on the end portion of the external electrode when the bending stress was applied.

  As described above, it has been confirmed that the present invention is effective as a method for forming an external electrode that is excellent in dimensional accuracy, suppresses structural defects, and further improves the reliability of deflection strength.

It is a fragmentary sectional view of the chip type electronic component for explaining the film thickness of each part of an external electrode. It is a process conceptual diagram for demonstrating the external electrode formation method of this invention. It is sectional drawing of the chip-type electronic component for demonstrating the external electrode structure in an Example, and the measuring object of a structural defect. 6 is a graph showing the measurement results of the deflection strength in Example 2.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Chip type | mold electronic component 2 External electrode 3 Edge part film thickness 4 Side surface part film thickness 5 End surface part film thickness 6 Side surface part length 7 Edge part crack 8 Side surface part crack 9 Planar support body 10 Conductive paste film 11 Chip type electronic component Elements 12, 14 Conductive paste coating 13 Elastic body having open pores

Claims (1)

  1. Applying a conductive paste to the end of the chip-type electronic component element;
    The surplus adhering to the end portion of the chip-type electronic component element by pushing the end portion of the chip-type electronic component element coated with the conductive paste into the elastic body having open pores and then pulling it away from the elastic body Removing the conductive paste by absorbing the open pores of the elastic body,
    Applying the chip-type electronic component element and sintering the conductive paste from which the excess is removed,
    A method of forming an external electrode of a chip-type electronic component, comprising:
JP2003356894A 2003-10-16 2003-10-16 Method for fabricating chip-type electronic component external electrode Pending JP2005123407A (en)

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JP2008112759A (en) * 2006-10-27 2008-05-15 Tdk Corp Ceramic electronic component and its manufacturing process
JP2008166595A (en) * 2006-12-28 2008-07-17 Tdk Corp Chip component
JP2013149939A (en) * 2012-01-18 2013-08-01 Samsung Electro-Mechanics Co Ltd Multilayer ceramic electronic component and fabrication method thereof
US20140116761A1 (en) * 2012-10-31 2014-05-01 Samsung Electronics Co., Ltd. Multilayer ceramic capacitor and printed circuit board including the same
JP2014131009A (en) * 2012-12-31 2014-07-10 Samsung Electro-Mechanics Co Ltd Electronic component and method of manufacturing electronic component
JP2015023269A (en) * 2013-07-17 2015-02-02 サムソン エレクトロ−メカニックス カンパニーリミテッド. Multilayer ceramic capacitor to be embedded in board, method of manufacturing the same, and method of manufacturing board having multilayer ceramic capacitor embedded therein
JP2016149484A (en) * 2015-02-13 2016-08-18 Tdk株式会社 Multilayer capacitor
JP2016149487A (en) * 2015-02-13 2016-08-18 Tdk株式会社 Multilayer capacitor
US10068709B2 (en) 2015-07-09 2018-09-04 Murata Manufacturing Co., Ltd. Electronic component and method for manufacturing the same
CN109243826A (en) * 2017-07-11 2019-01-18 三星电机株式会社 Multilayer ceramic capacitor and its manufacturing method and the method for forming external electrode

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2002033202A (en) * 2000-07-13 2002-01-31 K-Tech Devices Corp Chip type electronic component and manufacturing method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033202A (en) * 2000-07-13 2002-01-31 K-Tech Devices Corp Chip type electronic component and manufacturing method thereof

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JP2008112759A (en) * 2006-10-27 2008-05-15 Tdk Corp Ceramic electronic component and its manufacturing process
JP2008166595A (en) * 2006-12-28 2008-07-17 Tdk Corp Chip component
JP2013149939A (en) * 2012-01-18 2013-08-01 Samsung Electro-Mechanics Co Ltd Multilayer ceramic electronic component and fabrication method thereof
US20140116761A1 (en) * 2012-10-31 2014-05-01 Samsung Electronics Co., Ltd. Multilayer ceramic capacitor and printed circuit board including the same
JP2014093524A (en) * 2012-10-31 2014-05-19 Samsung Electro-Mechanics Co Ltd Multilayer ceramic capacitor and printed circuit board including the same
US9345141B2 (en) 2012-10-31 2016-05-17 Samsung Electro-Mechanics Co., Ltd. Multilayer ceramic capacitor and printed circuit board including the same
JP2014131009A (en) * 2012-12-31 2014-07-10 Samsung Electro-Mechanics Co Ltd Electronic component and method of manufacturing electronic component
US9543076B2 (en) 2012-12-31 2017-01-10 Samsung Electro-Mechanics Co., Ltd. Electronic component and method of manufacturing the same
JP2015023269A (en) * 2013-07-17 2015-02-02 サムソン エレクトロ−メカニックス カンパニーリミテッド. Multilayer ceramic capacitor to be embedded in board, method of manufacturing the same, and method of manufacturing board having multilayer ceramic capacitor embedded therein
US9099250B2 (en) 2013-07-17 2015-08-04 Samsung Electro-Mechanics Co., Ltd. Multilayer ceramic capacitor to be embedded in board, method of manufacturing the same, and method of manufacturing board having multilayer ceramic capacitor embedded therein
JP2016149487A (en) * 2015-02-13 2016-08-18 Tdk株式会社 Multilayer capacitor
US20160240316A1 (en) * 2015-02-13 2016-08-18 Tdk Corporation Multilayer capacitor
US20160240315A1 (en) * 2015-02-13 2016-08-18 Tdk Corporation Multilayer capacitor
CN105895372A (en) * 2015-02-13 2016-08-24 Tdk株式会社 Multilayer capacitor
CN105895369A (en) * 2015-02-13 2016-08-24 Tdk株式会社 Multilayer Capacitor
JP2016149484A (en) * 2015-02-13 2016-08-18 Tdk株式会社 Multilayer capacitor
US9972437B2 (en) * 2015-02-13 2018-05-15 Tdk Corporation Multilayer capacitor with terminal electrode including sintered conductor layer
US10026554B2 (en) * 2015-02-13 2018-07-17 Tdk Corporation Multilayer capacitor with (1) an element body having internal electrodes and (2) opposing terminal electrodes
US10068709B2 (en) 2015-07-09 2018-09-04 Murata Manufacturing Co., Ltd. Electronic component and method for manufacturing the same
CN109243826A (en) * 2017-07-11 2019-01-18 三星电机株式会社 Multilayer ceramic capacitor and its manufacturing method and the method for forming external electrode

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