JP2005101581A5 - - Google Patents
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- Publication number
- JP2005101581A5 JP2005101581A5 JP2004247664A JP2004247664A JP2005101581A5 JP 2005101581 A5 JP2005101581 A5 JP 2005101581A5 JP 2004247664 A JP2004247664 A JP 2004247664A JP 2004247664 A JP2004247664 A JP 2004247664A JP 2005101581 A5 JP2005101581 A5 JP 2005101581A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- igbt
- trench
- insulating film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 description 139
- 239000011229 interlayer Substances 0.000 description 82
- 239000000758 substrate Substances 0.000 description 76
- 230000015572 biosynthetic process Effects 0.000 description 75
- 238000002955 isolation Methods 0.000 description 45
- 239000010410 layer Substances 0.000 description 44
- 238000004519 manufacturing process Methods 0.000 description 41
- 239000011668 ascorbic acid Substances 0.000 description 34
- LWIHDJKSTIGBAC-UHFFFAOYSA-K potassium phosphate Substances [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 21
- 239000012535 impurity Substances 0.000 description 19
- 238000002161 passivation Methods 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 230000003993 interaction Effects 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000010354 integration Effects 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Substances OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004247664A JP2005101581A (ja) | 2003-08-29 | 2004-08-27 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003209751 | 2003-08-29 | ||
| JP2004247664A JP2005101581A (ja) | 2003-08-29 | 2004-08-27 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005101581A JP2005101581A (ja) | 2005-04-14 |
| JP2005101581A5 true JP2005101581A5 (https=) | 2007-08-30 |
Family
ID=34466743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004247664A Withdrawn JP2005101581A (ja) | 2003-08-29 | 2004-08-27 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005101581A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527811B (zh) * | 2016-06-21 | 2020-07-10 | 无锡华润上华科技有限公司 | 横向绝缘栅双极型晶体管及其制造方法 |
| JP2019054106A (ja) * | 2017-09-14 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03194974A (ja) * | 1989-12-22 | 1991-08-26 | Fuji Electric Co Ltd | Ｍｏｓ型半導体装置 |
| JPH07254609A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体装置 |
| JP4175750B2 (ja) * | 1999-10-27 | 2008-11-05 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
| JP4797265B2 (ja) * | 2001-03-21 | 2011-10-19 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP4764975B2 (ja) * | 2001-05-30 | 2011-09-07 | 富士電機株式会社 | 半導体装置 |
-
2004
- 2004-08-27 JP JP2004247664A patent/JP2005101581A/ja not_active Withdrawn
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