JP2005101581A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2005101581A
JP2005101581A JP2004247664A JP2004247664A JP2005101581A JP 2005101581 A JP2005101581 A JP 2005101581A JP 2004247664 A JP2004247664 A JP 2004247664A JP 2004247664 A JP2004247664 A JP 2004247664A JP 2005101581 A JP2005101581 A JP 2005101581A
Authority
JP
Japan
Prior art keywords
region
semiconductor device
trench
element formation
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004247664A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005101581A5 (https=
Inventor
Yoshio Sugi
祥夫 杉
Naoto Fujishima
直人 藤島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Holdings Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Holdings Ltd filed Critical Fuji Electric Holdings Ltd
Priority to JP2004247664A priority Critical patent/JP2005101581A/ja
Publication of JP2005101581A publication Critical patent/JP2005101581A/ja
Publication of JP2005101581A5 publication Critical patent/JP2005101581A5/ja
Withdrawn legal-status Critical Current

Links

Images

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2004247664A 2003-08-29 2004-08-27 半導体装置 Withdrawn JP2005101581A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004247664A JP2005101581A (ja) 2003-08-29 2004-08-27 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003209751 2003-08-29
JP2004247664A JP2005101581A (ja) 2003-08-29 2004-08-27 半導体装置

Publications (2)

Publication Number Publication Date
JP2005101581A true JP2005101581A (ja) 2005-04-14
JP2005101581A5 JP2005101581A5 (https=) 2007-08-30

Family

ID=34466743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004247664A Withdrawn JP2005101581A (ja) 2003-08-29 2004-08-27 半導体装置

Country Status (1)

Country Link
JP (1) JP2005101581A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019054106A (ja) * 2017-09-14 2019-04-04 株式会社東芝 半導体装置
JP2019519116A (ja) * 2016-06-21 2019-07-04 無錫華潤上華科技有限公司Ｃｓｍｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｆａｂ２ Ｃｏ．， Ｌｔｄ． 横型絶縁ゲートバイポーラトランジスタ及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194974A (ja) * 1989-12-22 1991-08-26 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
JPH07254609A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体装置
JP2001127287A (ja) * 1999-10-27 2001-05-11 Toshiba Corp 絶縁ゲート型半導体装置
JP2002280549A (ja) * 2001-03-21 2002-09-27 Fuji Electric Co Ltd 半導体装置および半導体装置の製造方法
JP2002353447A (ja) * 2001-05-30 2002-12-06 Fuji Electric Co Ltd 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194974A (ja) * 1989-12-22 1991-08-26 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
JPH07254609A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体装置
JP2001127287A (ja) * 1999-10-27 2001-05-11 Toshiba Corp 絶縁ゲート型半導体装置
JP2002280549A (ja) * 2001-03-21 2002-09-27 Fuji Electric Co Ltd 半導体装置および半導体装置の製造方法
JP2002353447A (ja) * 2001-05-30 2002-12-06 Fuji Electric Co Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019519116A (ja) * 2016-06-21 2019-07-04 無錫華潤上華科技有限公司Ｃｓｍｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｆａｂ２ Ｃｏ．， Ｌｔｄ． 横型絶縁ゲートバイポーラトランジスタ及びその製造方法
US10770572B2 (en) 2016-06-21 2020-09-08 Csmc Technologies Fab2 Co., Ltd. Lateral insulated-gate bipolar transistor and manufacturing method therefor
JP2019054106A (ja) * 2017-09-14 2019-04-04 株式会社東芝 半導体装置

Similar Documents

Publication Publication Date Title
US7109551B2 (en) Semiconductor device
US8956940B2 (en) Oxide terminated trench MOSFET with three or four masks
JP4664631B2 (ja) 半導体装置及びその製造方法
US20070176237A1 (en) Semiconductor device and manufacturing method thereof
US10903348B2 (en) Semiconductor device
US11049956B2 (en) Method of forming a semiconductor device
US20080001214A1 (en) Semiconductor device
US8946819B2 (en) Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same
JP2006310735A (ja) 一体型本体短絡を有する上部ドレインｆｅｔ
JP4997694B2 (ja) 半導体装置およびその製造方法
US7821033B2 (en) Semiconductor component comprising a drift zone and a drift control zone
JP3827954B2 (ja) Ｐｎ分離層をもつｉｇｂｔ
KR102324168B1 (ko) 반도체 장치 및 그 제조 방법
KR100737309B1 (ko) 반도체 장치 및 반도체 장치의 제조 방법
JP2005101581A (ja) 半導体装置
JP2005101581A5 (https=)
CN115224049A (zh) 半导体装置
KR20020010041A (ko) 트렌치구조의 폴리실리콘 영역을 구비하는 고전압소자 및그 제조방법
CN100477236C (zh) 半导体装置及半导体装置的制造方法
KR20190118812A (ko) 반도체 장치 및 그 제조 방법
JP4193662B2 (ja) トレンチ横型伝導度変調半導体装置および半導体装置の製造方法
JP2010045240A (ja) 縦型ｍｏｓｆｅｔ
JP3191285B2 (ja) 半導体装置及びその製造方法
JP2004063844A (ja) 半導体装置及びその製造方法
KR20220136008A (ko) 반도체 장치

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060703

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060704

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070717

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070717

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20080204

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20081216

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20090219

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20091112

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101004

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101012

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20101220