JP2005097663A - Thin-film-forming apparatus and thin-film-forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin-film-forming apparatus for forming a thin film having a uniform thickness on a substrate through plasma treatment, and to provide a thin-film-forming method therefor. <P>SOLUTION: The thin-film-forming apparatus is an apparatus for forming the thin film on the substrate through plasma treatment at atmospheric pressure. The thin-film-forming apparatus comprises an electrode roller 135 and a square-cylinder-shaped electrode 136 placed so as to face each other; an image sensor 1 for monitoring a gap g between the electrode roller 135 and the square-cylinder-shaped electrode 136; an adjusting means (the diagrammatic representation is omitted) for adjusting the gap g: and a controlling device (the diagrammatic representation is omitted) for controlling the adjusting means. In the thin-film-forming apparatus, the controlling device controls the adjusting means so that the gap g can become a previously-set value on the basis of monitored results by the image sensor 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a thin film forming apparatus and a thin film forming method for forming a thin film on a substrate by atmospheric pressure plasma treatment, and more particularly to a configuration for detecting and adjusting a gap between opposing electrodes.

  Currently, many products such as LSIs, semiconductors, display devices, magnetic recording devices, photoelectric conversion devices, Josephson devices, solar cells, and photothermal conversion devices are composed of materials with a high-performance thin film on a substrate. Has been. High-functional thin films include, for example, electrode films, dielectric protective films, semiconductor films, transparent conductive films, electrochromic films, fluorescent films, superconducting films, dielectric films, solar cell films, antireflection films, Abrasion film, optical interference film, reflection film, antistatic film, conductive film, antifouling film, hard coat film, undercoat film, barrier film, electromagnetic wave shielding film, infrared shielding film, ultraviolet absorbing film, lubricating film, shape memory Films, magnetic recording films, light emitting element films, biocompatible films, corrosion resistant films, catalyst films, gas sensor films, decorative films, and the like.

Conventionally, such high-functional thin films have been prepared by dry deposition using a vacuum, such as a wet film formation method represented by a coating method, a sputtering method, a vacuum deposition method, an ion plating method, a thermal CVD method, or a vacuum plasma method. It is formed by a film forming method. Furthermore, in recent years, a high-functional thin film can be formed by a method using atmospheric pressure plasma discharge treatment (see, for example, Patent Document 1). According to the method using the atmospheric pressure plasma discharge treatment, a thin film with higher performance can be obtained as compared with the wet film forming method, and the productivity of the thin film can be improved as compared with the dry film forming method. Since the method using atmospheric pressure plasma discharge treatment does not need to be performed under vacuum conditions, the greatest merit is that a thin film can be continuously formed as in the coating method.
JP 2001-181850 A

By the way, in the disclosed technique of Patent Document 1, the film thickness of the thin film formed on the substrate is measured online, and the frequency of the power source is feedback-controlled based on the measurement result of the film thickness to form the thin film film. Although the thickness is uniform, the distance between the opposing electrodes (gap) varies slightly during thin film deposition (during discharge), and as a result, the film thickness (thickness distribution) varies. As a result, the thickness of the thin film cannot be made uniform.
The objective of this invention is providing the thin film formation apparatus and thin film formation method which can equalize the film thickness of a thin film.

In order to solve the above problem, the invention according to claim 1
In a thin film forming apparatus that forms a thin film on a substrate by plasma treatment,
Counter electrodes arranged opposite to each other;
Detecting means for detecting a gap between the opposing electrodes;
Adjusting means for adjusting the gap;
A control device for controlling the adjusting means so that the gap becomes a preset value based on a detection result by the detecting means;
It is characterized by having.

The invention described in claim 2
In a thin film forming apparatus that forms a thin film on a substrate by atmospheric pressure plasma treatment,
Counter electrodes arranged opposite to each other;
Detecting means for detecting a gap between the opposing electrodes;
Adjusting means for adjusting the gap;
A control device for controlling the adjusting means so that the gap becomes a preset value based on a detection result by the detecting means;
It is characterized by having.

The invention according to claim 3
The thin film forming apparatus according to claim 1 or 2,
The counter electrode has a long shape,
A plurality of the detection means and the adjustment means are respectively disposed along the length direction of the counter electrode,
The control device controls each of the adjusting units so that the gap becomes a preset value based on a detection result of each of the detecting units.

The invention according to claim 4
In the thin film formation apparatus as described in any one of Claims 1-3,
The detection means is an image sensor for monitoring the gap;
The control device analyzes and calculates a monitoring result obtained by the image sensor to calculate the gap, and controls the adjustment unit so that the calculated gap becomes the set value.

The invention described in claim 5
The thin film forming apparatus according to claim 4.
The image sensor is covered with an electromagnetic wave shielding member that blocks electromagnetic waves.

The invention described in claim 6
In the thin film forming apparatus according to claim 4 or 5,
The image sensor is a CCD, CMOS or VMIS.

The invention described in claim 7
In the thin film formation apparatus as described in any one of Claims 1-3,
The detection means is a spectrophotometer that measures the amount of light emitted from between the counter electrodes,
The control device is characterized in that the gap is calculated from a measurement result obtained by the spectrophotometer, and the adjusting means is controlled so that the calculated gap becomes the set value.

The invention according to claim 8 provides:
The thin film forming apparatus according to claim 7,
In the control device, a calibration curve that associates the light quantity and the gap with each other is stored in advance as data,
The control device is characterized in that the gap is calculated from the calibration curve data according to the measurement result of the spectrophotometer, and the adjustment means is controlled so that the calculated gap becomes the set value.

The invention according to claim 9 is:
In the thin film forming apparatus according to claim 7 or 8,
The spectrophotometer is covered with an electromagnetic wave shielding member that blocks electromagnetic waves.

The invention according to claim 10 is:
In the thin film formation apparatus as described in any one of Claims 1-3,
The detecting means is a gauge for measuring the deformation amount of the counter electrode;
The control device calculates the gap from a measurement result of the gauge, and controls the adjusting means so that the calculated gap becomes the set value.

The invention according to claim 11
The thin film forming apparatus according to claim 10,
In the control device, a calibration curve in which the deformation amount and the gap are associated with each other is stored in advance as data,
The control device calculates the gap from data of the calibration curve according to the measurement result by the gauge, and controls the adjusting means so that the calculated gap becomes the set value.

The invention according to claim 12
The thin film forming apparatus according to claim 10 or 11,
The gauge is a dial gauge or a laser displacement meter.

The invention according to claim 13
In the thin film forming apparatus according to any one of claims 1 to 12,
The adjusting means is a push-pull bolt, a heat bolt, or a heat deformation plate that deforms the counter electrode.

The invention according to claim 14
In a thin film forming method of forming a thin film on a substrate by plasma treatment,
A gap between opposed electrodes arranged opposite to each other is detected, and the gap is adjusted so that the gap becomes a preset value based on the detection result.

The invention according to claim 15 is:
In a thin film formation method of forming a thin film on a substrate by atmospheric pressure plasma treatment,
A gap between opposed electrodes arranged opposite to each other is detected, and the gap is adjusted so that the gap becomes a preset value based on the detection result.

The invention described in claim 16
The thin film forming method according to claim 14 or 15,
The counter electrode has a long shape,
The gap is detected over a plurality of locations along the length direction of the counter electrode, and the gap is set over a plurality of locations along the length direction of the counter electrode so that the gap becomes the set value based on the detection result. It is characterized by adjusting.

The invention described in claim 17
In the thin film formation method as described in any one of Claims 14-16,
The gap is detected by an image sensor that monitors the gap, the gap is calculated by analyzing and calculating the monitoring result of the image sensor, and the gap is adjusted so that the calculated gap becomes the set value. It is characterized by doing.

The invention described in claim 18
The thin film forming method according to claim 17,
The image sensor is covered with an electromagnetic wave shielding member that blocks electromagnetic waves.

The invention according to claim 19 is
The thin film forming method according to claim 17 or 18,
The image sensor is a CCD, CMOS or VMIS.

The invention according to claim 20 provides
In the thin film formation method as described in any one of Claims 14-16,
The gap is detected by a spectrophotometer that measures the amount of light emitted from between the counter electrodes, the gap is calculated from the measurement result by the spectrophotometer, and the calculated gap is set to the set value. It is characterized by adjusting the gap.

The invention according to claim 21
The thin film forming method according to claim 20,
According to the measurement result by the spectrophotometer, the gap is calculated from calibration curve data in which the light quantity and the gap are associated with each other, and the gap is adjusted so that the calculated gap becomes the set value. It is characterized by that.

The invention described in claim 22
The thin film forming method according to claim 20 or 21,
The spectrophotometer is covered with an electromagnetic wave shielding member that blocks electromagnetic waves.

The invention according to claim 23 provides
In the thin film formation method as described in any one of Claims 14-16,
The gap is detected by a gauge that measures the deformation amount of the counter electrode, the gap is calculated from the measurement result of the gauge, and the gap is adjusted so that the calculated gap becomes the set value. It is said.

The invention according to claim 24 provides
The thin film forming method according to claim 23,
According to the measurement result by the gauge, the gap is calculated from calibration curve data in which the deformation amount and the gap are associated with each other, and the gap is adjusted so that the calculated gap becomes the set value. It is characterized by.

The invention according to claim 25 provides
In the thin film formation method of Claim 23 or 24,
The gauge is a dial gauge or a laser displacement meter.

The invention according to claim 26 provides
In the thin film formation method as described in any one of Claims 14-25,
The gap is adjusted by a push-pull bolt, a heat bolt, or a heat deformation plate that deforms the counter electrode.

  In the first and second aspects of the invention, since the gap between the counter electrodes can be detected and adjusted, the fluctuation of the gap between the counter electrodes can be suppressed, and the film thickness of the thin film formed on the substrate Can be made uniform.

  In the invention described in claim 3, since a plurality of detection means and adjustment means are arranged along the length direction of the counter electrode, the gap between the counter electrodes is detected / adjusted at a plurality of locations along the length direction of the counter electrode. It is possible and the film thickness of the thin film formed on a base material can be made uniform along the length direction of a counter electrode.

  According to the fifth and 18th aspects of the present invention, it is possible to prevent the image sensor from malfunctioning due to the influence of electromagnetic waves radiated from between the counter electrodes.

  In the invention according to claims 9 and 22, it is possible to prevent the spectrophotometer from malfunctioning due to the influence of electromagnetic waves radiated from between the counter electrodes.

  In the inventions according to claims 14 and 15, since the gap between the counter electrodes is detected and the gap is adjusted, the fluctuation of the gap between the counter electrodes can be suppressed, and the film thickness of the thin film formed on the substrate can be reduced. It can be made uniform.

  In the invention described in claim 16, in order to detect and adjust the gap between the counter electrodes at a plurality of locations extending in the length direction of the counter electrode, the film thickness of the thin film formed on the substrate is set in the length direction of the counter electrode. Can be made uniform along.

The best mode for carrying out the present invention will be described below with reference to the drawings. However, the scope of the invention is not limited to the illustrated examples.
First, a schematic configuration of the thin film forming apparatus will be described with reference to FIGS.
1 is a view showing a thin film forming apparatus 130, FIG. 2 is a perspective view showing an electrode roller 135, and FIG. 3 is a perspective view showing a rectangular tube electrode 136. As shown in FIG.

  As shown in FIG. 1, the thin film forming apparatus 130 has an electrode roller 135 that can rotate in the clockwise direction in FIG. A plurality of rectangular tube electrodes 136, 136,... Are arranged in the vicinity of the electrode roller 135 along the outer periphery of the electrode roller 135. Each square tube electrode 136 faces the electrode roller 135 with a gap g (see FIGS. 4 and 5), and the electrode roller 135 and each square tube electrode 136 constitute a counter electrode. ing.

  Note that the electrode roller 135 and each rectangular tube-shaped electrode 136 are elongated electrodes and extend from the front side to the back side (or from the back side to the front side) in FIG.

  As shown in FIG. 2, the electrode roller 135 is cylindrical and has a structure in which a conductive metallic base material 135A is covered with a dielectric 135B. On the other hand, as shown in FIG. 3, the rectangular tube-shaped electrode 136 has a rectangular tube-shaped and conductive metallic base material 136A covered with a dielectric 136B.

  Each of the metallic base materials 135A and 136A of the electrode roller 135 and the rectangular tube type electrode 136 is (1) a metal such as titanium metal, titanium alloy, silver, platinum, stainless steel, aluminum, iron, or the like. (2) a composite of iron and ceramics. Material (3) It is comprised with either the composite material of aluminum and ceramics. Each of the metallic base materials 135A and 136A is preferably composed of titanium metal or a titanium alloy.

  The electrode roller 135 and the rectangular tube-shaped electrode 136 are sealed with an inorganic compound sealing material after thermally spraying ceramics as dielectrics 135B and 136B on the metallic base materials 135A and 136A. The dielectrics 135B and 136B made of ceramics are preferably covered with the metal base materials 135A and 136A by a thickness of about 1 mm. As the ceramic material used for thermal spraying, alumina, silicon nitride or the like is preferably used. Among these, use of alumina is particularly preferable because it is easy to process. Each dielectric 135B, 136B may be a lining-processed dielectric provided with an inorganic material by glass lining.

  As shown in FIG. 1, the thin film forming apparatus 130 includes a first power source 141 that applies a high-frequency electric field to the electrode roller 135 and a second power source 142 that applies a high-frequency electric field to each square tube electrode 136. Has been. The first power supply 141 applies a first high-frequency electric field E1 having a frequency ω1 and an electric field strength V1 to the electrode roller 135, and the second power supply 142 applies a frequency ω2 and an electric field strength to each rectangular tube electrode 136. The second high frequency electrolysis E2 of V2 is applied. In the thin film forming apparatus 130, when the first and second power sources 141 and 142 apply high-frequency electric fields E 1 and E 2 to the electrode roller 135 and each square tube electrode 136, the electrode roller 135 and each square tube electrode 136 are connected to each other. A discharge phenomenon occurs, and a plurality of discharge spaces 132, 132,... According to the number of rectangular tube electrodes 136 are formed during the discharge phenomenon.

  A first filter 143 is installed between the first power source 141 and the electrode roller 135, and a second filter 144 is installed between the second power source 142 and each square tube electrode 136. ing. The first filter 143 facilitates the passage of the current of the first high-frequency electric field E1 from the first power source 141 to the electrode roller 135, grounds the second high-frequency electric field E2, and causes the first power source 142 to ground the first high-frequency electric field E2. This makes it difficult for the power source 141 to pass the current of the second high-frequency electric field E2. Conversely, the second filter 142 facilitates the passage of the current of the second high-frequency electric field E2 from the second power source 142 to each rectangular tube-shaped electrode 136, and grounds the first high-frequency electric field E1 to provide the first power source. This makes it difficult for the current of the first high-frequency electric field E1 to pass from 141 to the second power source 142.

  As the first filter 143, a capacitor of several tens to several tens of thousands of pF or a coil of about several μH is used according to the frequency ω2 of the second power supply 142. As the second filter 144, the first filter 143 A coil of 10 μH or more is used according to the frequency ω1 of the power supply 141. The first and second filters 143 and 144 are grounded through these coils or capacitors.

  The thin film forming apparatus 130 is provided with a long plasma discharge treatment vessel 131 having a C-shaped cross section and extending from the front side to the back side (or from the back side to the front side) in FIG. The plasma discharge treatment vessel 131 is installed so as to cover approximately two-thirds of the outer peripheral surface of the electrode roller 135, and all the rectangular tube electrodes 136, 136,... Are arranged inside the plasma discharge treatment vessel 131. ing.

  As described above, when the first and second high-frequency electric fields E1 and E2 are applied to the electrode roller 135 and each square tube electrode 136, a plurality of discharge spaces are formed between the electrode roller 135 and each square tube electrode 136. 132, 132,... Are formed, but in order to prevent electromagnetic waves emitted from the discharge spaces 132 from radiating to the outside of the plasma discharge processing vessel 131, an electromagnetic shield panel for shielding electromagnetic waves that is grounded to ground is used as a plasma. You may arrange | position inside the discharge processing container 131. FIG.

  Nip rollers 165 and 166 and partition plates 168 and 169 are provided in pairs in the vicinity of both ends of the plasma discharge processing container 131, and the plasma discharge processing container 131 is formed by nip rollers 165 and 166 and partition plates 168 and 169. It has a structure in which both ends are closed.

  Two guide rollers 164 and 167 are provided in the vicinity of the electrode roller 135 where the plasma processing discharge vessel 131 is not installed. Each of the guide rollers 164 and 167 guides the conveyance of the film-like substrate F. In the thin film forming apparatus 130, the substrate F is in contact with the outer peripheral surface of the electrode roller 135 while being guided by the guide rollers 164 and 167 along with the rotation of the electrode roller 135. It is supposed to pass between. That is, in the thin film forming apparatus 130, the base material F is conveyed along the outer periphery of the electrode roller 135 from the vicinity of the guide roller 164 to the vicinity of the guide roller 167.

  In FIG. 1, a gas supply device 151 that supplies a gas G to the inside of the plasma discharge processing container 131 is provided above the plasma discharge processing container 131. The gas supply device 151 is connected to the middle portion of the plasma discharge processing container 131 via a gas supply pipe 152, and supplies the gas G into the plasma discharge processing container 131 with the flow rate controlled. . In the thin film forming apparatus 130, when the gas G is supplied into the plasma discharge processing container 131, the gas G is filled into the plasma discharge processing container 131 as the gas G supply time elapses.

  Exhaust ports 153 for exhausting the exhaust gas G ′ that has been subjected to the discharge treatment from the inside of the plasma discharge treatment vessel 131 to the outside are provided at both ends of the plasma treatment vessel 131.

  In FIG. 1, temperature adjusting means 160 for adjusting the temperature of the electrode roller 135 and each square tube electrode 136 is provided below the plasma discharge processing vessel 131. The temperature adjusting means 160 heats or cools a medium such as water or silicon oil to adjust the medium to a predetermined temperature, and the temperature adjusting device 162, the electrode roller 135, and the square tube electrode 136 are mutually connected. The connecting pipe 161 and a pump 163 for pressure-feeding the medium from the temperature control device 162 to the electrode roller 135 and each square tube electrode 136 are provided. In the thin film forming apparatus 130, when the pump 163 is operated, the medium whose temperature is adjusted by the temperature adjusting device 162 is circulated through the pipe 161 between the electrode roller 135 and each square tube electrode 136 and the temperature adjusting device 162. The electrode roller 135 and each square tube electrode 136 can be adjusted to a predetermined temperature.

  Note that the inside of the electrode roller 135 and each square tube electrode 136 is hollow, and in the thin film forming apparatus 130, the temperature-controlled medium circulates through the hollow portions of the electrode roller 135 and each square tube electrode 136. The temperature of the electrode roller 135 and each rectangular tube type electrode 136 is adjusted.

Next, the internal configuration of the plasma discharge processing container 131 will be described with reference to FIGS.
4 is a side view showing the configuration in the vicinity of the discharge space 132, FIG. 5 is a perspective view showing the configuration in the vicinity of the discharge space 132, and FIG. 6 is a cross-sectional view showing the configuration of the members arranged in the rectangular tube electrode 136. FIG.

  As shown in FIG. 4, the rectangular tube electrode 136 is disposed in a state of facing the electrode roller 135. A gap g between the electrode roller 135 and the rectangular tube electrode 136 is kept at 0.3 to 30 mm (preferably 0.5 to 5 mm).

  As described above, when the first and second high frequency electric fields E1 and E2 are applied to the electrode roller 135 and the rectangular tube electrode 136, the discharge space 132 is formed between the electrode roller 135 and the rectangular tube electrode 136. Although formed, an image sensor 1 (image sensor) for monitoring the gap g between the electrode roller 135 and the rectangular tube electrode 136 is disposed in the vicinity of the discharge space 132. As the image sensor 1, a charge coupled device (CCD), a complementary metal oxide semiconductor (CMOS), a threshold voltage modulation image sensor (VMIS), or the like is applicable.

  The image sensor 1 is disposed inside an electromagnetic wave shield box 2 that blocks electromagnetic waves emitted from the discharge space 132. The side surface (surface facing the discharge space 132 in FIG. 4) of the electromagnetic wave shielding box 2 as the electromagnetic wave shielding member is made of transparent quartz glass 3, and the image sensor 1 monitors the gap g through the quartz glass 3. It is like that.

  In the thin film forming apparatus 130, as shown in FIG. 5, a plurality of image sensors 1 are arranged along the length direction (extending direction) of the rectangular tube electrode 136 so that the gap g can be monitored over a plurality of points. It has become. Although not shown in FIG. 5, all the image sensors 1 are arranged inside the electromagnetic wave shield box 2.

  In the thin film forming apparatus 130, a plurality of image sensors 1, 1,... Are arranged, but the number of image sensors 1 may be one, or two or more. In order to monitor the gap g more accurately over the length direction of the rectangular tube electrode 136, it is preferable to arrange two or more image sensors 1.

  As shown in FIG. 6, on the upper part of the rectangular tube electrode 136 (the portion opposite to the portion facing the electrode roller 135), the transfer plate 10 extending from one end of the rectangular tube electrode 136 to the other end. Are fixed to each other, and a plurality of push-pull bolts 11, 11,... That are rotatable in a state of passing through the transfer plate 10 are provided. The transfer plate 10 is made of a material that is more rigid than the rectangular tube electrode 136.

  Each push-pull bolt 11 serving as an adjusting means has a male screw at its tip, and female screw 12, 12, ... is formed. The front end of each push-pull bolt 11 is fitted to female screws 12, 12,..., And the square tube electrode 136 can be freely deformed in the vertical direction in FIG. Can be done. That is, in the thin film forming apparatus 130, by adjusting the amount of rotation of each push-pull bolt 11, it is possible to restore a minute deflection (deformation) generated in the rectangular tube electrode 136, and the rectangular tube electrode 136, the electrode roller 135, The gap g can be kept constant.

  The thin film forming apparatus 130 is provided with a rotating mechanism 13 (see FIG. 7) that rotates each push-pull bolt 11. The rotating mechanism 13 adjusts the amount of rotation of each push-pull bolt 11 to form a square tube type. The gap g between the electrode 136 and the electrode roller 135 is kept constant.

Next, the circuit configuration of the thin film forming apparatus 130 will be described with reference to FIG.
FIG. 7 is a block diagram showing a circuit configuration of the thin film forming apparatus 130.
The thin film forming apparatus 130 includes a control device 8 that controls each part. As shown in FIG. 7, the control device 8 includes a control unit 9 including a general-purpose CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), and the like. The control unit 9 expands the processing program recorded in the ROM to the RAM and executes the processing program by the CPU.

  The control unit 9 controls the operation of each unit such as the electrode roller 135, the first and second power sources 141 and 142, the gas supply device 151, the temperature adjusting unit 160, and the rotating mechanism 13 in accordance with the processing program. It has become. In particular, in the thin film forming apparatus 130, each image sensor 1 is connected to the control unit 9, and the control unit 9 controls the rotation amount of each push-pull bolt 11 by the rotation mechanism 13 based on the monitoring result of each image sensor 1. Thus, the gap g between the electrode roller 135 and the rectangular tube electrode 136 is adjusted (corrected).

Next, “gas G” supplied to the discharge space 132 inside the plasma discharge processing vessel 131 will be described.
The gas G contains a discharge gas and a thin film forming gas. The discharge gas and the thin film forming gas may be supplied to the discharge space 132 in a premixed state before being supplied to the discharge space 132, or may be supplied to the discharge space 132 separately. The gas G is preferably mixed with an additive gas (or auxiliary gas) such as oxygen, hydrogen, carbon dioxide, or carbon monoxide as a component.

  “Discharge gas” is a gas capable of causing a discharge capable of forming a thin film. The discharge gas includes nitrogen, rare gas, air, hydrogen gas, oxygen and the like, and it is preferable to use nitrogen as the discharge gas in consideration of safety and cost. It is preferable that 50-100 volume% of discharge gas is nitrogen gas. At this time, the discharge gas other than nitrogen can contain less than 50% by volume of a rare gas. It is preferable to contain 90-99.9 volume% of discharge gas with respect to the total gas G amount.

  The “thin film forming gas” is a raw material gas that is excited by itself and becomes active and chemically deposited on the substrate F to form a thin film. Examples of the thin film forming gas include organic metal compounds, halogen metal compounds, metal hydride compounds, and the like. In view of handling problems, it is preferable to use an organometallic compound with a low risk of explosion as the thin film forming gas, and it is particularly preferable to use an organometallic compound having at least one oxygen in the molecule as the thin film forming gas.

  In this embodiment, Li, Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, and the like are used as the metal of the organometallic compound, metal halide, and metal hydride compound used for the thin film forming gas. Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Cd, In, Ir, Sn, Sb, Cs, Ba, La, Hf, Ta, Examples include W, Tl, Pb, Bi, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Next, “Substrate F” will be described.
Examples of the substrate F include cellulose ester (cellulose triacetate, cellulose acetate propionate, cellulose acetate phthalate, cellulose nitrate, etc.), polyester (polyethylene phthalate, polyethylene naphthalate, etc.), polycarbonate (bisphenol A polycarbonate, etc.), polystyrene ( Syndiotactic polystyrene, etc.), polyolefin (polyethylene, polypropylene, etc.), cellophane, polyvinylidene chloride, polyvinyl alcohol, copolyethylene vinyl alcohol, norbornene resin, polymethylpentene, polyetherketone, polyimide, polyethersulfone, polysulfone, polyether Ketoneimide, polyamide, fluororesin, nylon, polymethyl methacrylate It can be mentioned films such as acrylic or polyarylate.

  Gelatin, polyvinyl alcohol (PVA), an acrylic resin, a polyester resin, a cellulose resin, or the like may be coated on the base material F (on the surface on which the thin film is formed).

  Next, the operation of the thin film forming apparatus 130, specifically, a method for forming a thin film on the base material F with the thin film forming apparatus 130 will be described.

  First, the gas supply device 151 supplies the gas G to the inside of the plasma discharge processing vessel 131 under atmospheric pressure or a pressure in the vicinity thereof, and the gas G is filled between the electrode roller 135 and each square tube electrode 136. . “Atmospheric pressure or pressure in the vicinity thereof” is about 20 to 110 kPa, and preferably 93 to 104 kPa. In synchronization with this, the first and second power sources 141 and 142 apply the first and second high-frequency electric fields E1 and E2 to the electrode roller 135 and the square tube electrodes 136, respectively. Then, a discharge phenomenon occurs between the electrode roller 135 and each rectangular tube electrode 136, and a plurality of discharge spaces 132, 132,... Are formed between the discharge rollers 132, and the gas G is excited in each discharge space 132.

  As described above, each discharge space 132 is formed by the roller electrode 135 and each rectangular tube-shaped electrode 136. The roller electrode 135 and each rectangular tube-shaped electrode 136 have a frequency (ω1, ω2), an electric field strength (V1, Since the first and second power sources 141 and 142 having different V2) are connected to each other, two types of first and second high-frequency power sources E1 and E2 overlap each other in each discharge space 132.

Here, regarding the superposition of the two types of first and second high-frequency power sources E1 and E2, it is preferable that the following relationship (1) is satisfied in the present embodiment. However, “IV” in the relationship (1) below indicates the electric field strength at the start of discharge. If the following relationship (1) is satisfied, stable and uniform discharge can be performed even when nitrogen having a high electric field strength at the start of discharge is used as the discharge gas.
ω2> ω1 and V1 ≧ IV> V2 (or V1> IV ≧ V2) (1)

  In this state, the electrode roller 135 rotates clockwise in FIG. 1, and the base material F passes through each discharge space 132 while being in close contact with the electrode roller 135, and is conveyed from the vicinity of the guide roller 164 to the vicinity of the guide roller 167. The During the conveyance of the base material F, the base material F is exposed to the gas G excited in each discharge space 132, and a thin film is formed on the surface of the base material F.

  During the formation of the thin film, each image sensor 1 periodically monitors the gap g between the electrode roller 135 and each square tube electrode 136 and transmits the monitoring result to the control unit 9 of the control device 8. . The control unit 9 analyzes and calculates the monitoring results of the image sensors 1 to calculate the gap g, and determines whether or not the calculated gap g is within a control width range including a preset set value. When the gap g calculated from the monitoring result exceeds the range of the control range of the set value, the control unit 9 transmits a control signal for adjusting the amount of rotation of each push-pull bolt 11 to the rotation mechanism 13, and the rotation mechanism. 13, the amount of rotation of each push-pull bolt 11 is controlled to adjust the deflection of each rectangular tube type electrode 136.

  Thereafter, in the thin film forming apparatus 130, the operations of the respective parts are repeatedly performed, and thin films are sequentially formed on the surface of the substrate F.

  In the thin film forming apparatus 130 described above, since the gap g is adjusted by controlling the rotation amount of the push-pull bolt 11 based on the monitoring result of the gap g by the image sensor 1, the fluctuation of the gap g during the discharge operation can be suppressed. The film thickness of the thin film formed on the material F can be made uniform. In particular, in the thin film forming apparatus 130, a plurality of image sensors 1 and push-pull bolts 11 are arranged along the length direction of the rectangular tube-shaped electrode 136, and thus a plurality of gaps g extending in the length direction of the rectangular tube-shaped electrode 136. It can be detected and adjusted at a location, and the thickness of the thin film formed on the substrate F can be made uniform along the length direction of the rectangular tube electrode 136. That is, the thickness of the thin film along the width direction of the substrate F can be made uniform.

  The present invention is not limited to the above-described embodiment, and various improvements and design changes may be made without departing from the spirit of the present invention.

  For example, in the present embodiment, the gap g between the electrode roller 135 and the rectangular tube electrode 136 is calculated by monitoring with the image sensor 1, but instead of the image sensor 1, the well-known spectral shown in FIGS. 8 to 10 is used. The gap g may be calculated with the photometer 20 or a gauge.

  The spectrophotometer 20 is an instrument that measures the amount of light having a specific wavelength emitted from the discharge space 132. When the gap g is calculated by the spectrophotometer 20, a plurality of spectrophotometers 20 are used as shown in FIG. , 20,... Are arranged in the vicinity of the discharge space 132 along the length direction of the rectangular tube electrode 136, and the first calibration curve in which the light amount of the specific wavelength and the gap g are associated with each other is controlled as data. It is stored in the ROM (may be RAM) of the unit 9. And the control part 9 of the control apparatus 8 should just calculate the gap | interval g from the data of a 1st calibration curve according to the measurement result by each spectrophotometer 20. FIG.

  When the gap g is calculated by the spectrophotometer 20, it is preferable to arrange all the spectrophotometers 20 inside the electromagnetic wave shield box 2. In this case, each spectrophotometer 20 is affected by the electromagnetic wave radiated from the discharge space 132. It is possible to prevent the photometer 20 from malfunctioning.

  As a gauge for measuring the gap g, for example, a known dial gauge 21 (see FIG. 9), a laser displacement meter 22 (see FIG. 10), or the like can be applied.

  The dial gauge 21 is an instrument for measuring the deformation amount of the square tube electrode 136. When the gap g is calculated by the dial gauge 21, a plurality of dial gauges 21, 21,. A second calibration curve that is arranged above the cylindrical electrode 136 and associates the deformation amount of the rectangular cylindrical electrode 136 with the gap g is stored as data in the ROM (or RAM) of the control unit 9. . And the control part 9 of the control apparatus 8 should just calculate the space | gap g from the data of a 2nd calibration curve according to the measurement result by each dial gauge 21.

  Similarly to the dial gauge 21, the laser displacement meter 22 is an instrument for measuring the deformation amount of the rectangular tube electrode 136. When the gap g is calculated by the laser displacement meter 22, a plurality of lasers are used as shown in FIG. Displacement meters 22, 22,... Are arranged above the rectangular tube-shaped electrode 136, and the control unit 9 of the control device 8 calculates the gap g from the data of the second calibration curve according to the measurement result by each laser displacement meter 22. You just have to do it.

  In the case of applying a gauge that measures the deformation amount of the gap g by contacting the rectangular tube electrode 136 such as the dial gauge 21, an insulator is interposed between the gauge and the rectangular tube electrode 136. It is preferable to make it.

  Further, in this embodiment, the gap g between the electrode roller 135 and the square tube electrode 136 is adjusted by the push-pull bolt 11, but instead of the push-pull bolt 11, the heat bolt 30 shown in FIGS. The gap g may be adjusted by the heat deformation plate 40.

  The heat bolt 30 is a member that expands or contracts by heating or cooling. When the gap g is adjusted by the heat bolt 30, as shown in FIG. 11, the transfer plate is almost the same as the transfer plate 10 (see FIG. 6). If both ends of 31 are fixed to the upper part of the rectangular tube-shaped electrode 136, and the tips of the plurality of heat bolts 30, 30,. Good. With such a configuration, the square tube electrode 136 can be deformed in the vertical direction in FIG. 11 by the expansion or contraction of each heat bolt 30, and the gap g can be adjusted.

  The thermal deformation plate 40 is a member that deforms at the temperature of the medium circulating in the hollow interior (hollow portion 41). When the gap g is adjusted by the thermal deformation plate 40, as shown in FIG. The deformation plate 40 may be fixed to the upper part of the rectangular tube electrode 136 and the medium may be circulated from one end of the hollow portion 41 to the other end. With such a configuration, the thermal deformation plate 40 can be deformed in the vertical direction in FIG. 12, and the gap g can be adjusted.

  In addition, in the thin film forming apparatus 130, the inside of the rectangular tube electrode 136 is also hollow, and the medium whose temperature is adjusted by the temperature adjusting device 162 circulates through the hollow portion of the rectangular tube electrode 136 so that the rectangular tube electrode 136 is formed. Although the temperature is adjusted, it is necessary to use a medium having a temperature different from that of the medium circulating through the hollow part of the rectangular tube electrode 136 as the medium through which the hollow part 41 of the thermal deformation plate 40 is circulated.

In Example 1, using a thin film forming apparatus similar to the thin film forming apparatus 130 described in the above embodiment, a clear hard coat film and a TiO ₂ thin film are formed (film formation) in this order on a film-like substrate. The film thickness and refractive index of the TiO ₂ thin film were measured. Specific implementation procedures from the selection of the base material to the measurement of the film thickness and refractive index of the TiO ₂ thin film are as follows (1-1) to (1-4).

(1-1) Selection of base material As a base material, a cellulose acetate film made of Konica Minolta having a roll of 1500 m and a width of 660 mm was used.

(1-2) Formation of Clear Hard Coat Film A clear hard coat film coating liquid (ultraviolet curable resin liquid) having the following composition is filtered and prepared with a polypropylene filter having a pore size of 0.4 μm and filtered using a micro gravure coater. -The coating solution after preparation was apply | coated on the base material. Thereafter, the substrate coated with the coating solution is dried at 90 ° C., and the dried substrate is irradiated with ultraviolet rays of 150 mJ / cm ² to cure the coating solution on the substrate, and the film thickness is 5 μm on the substrate. A clear hard coat film was formed.

<Composition of clear hard coat film coating solution>
100 parts by mass of dipentaerythritol hexaacrylate (including dimer and trimer components)
Photoinitiator (dimethoxybenzophenone) 4 parts by weight Ethyl acetate 50 parts by weight Methyl ethyl ketone 50 parts by weight Isopropyl alcohol 50 parts by weight

(1-3) Formation of TiO ₂ Thin Film Six thin film forming apparatuses similar to the thin film forming apparatus 130 described in the above embodiment are arranged in a straight line, and the sixth thin film is formed from the first thin film forming apparatus. The substrate was sequentially conveyed to the apparatus, and a TiO ₂ thin film was formed on the clear hard coat film while adjusting the gap between the electrode roller and the square tube electrode during the conveyance of the substrate. Details of the electrode roller, rectangular tube electrode, gas composition, discharge conditions, gap adjustment, etc. are as follows.

<Electrode roller>
As the electrode roller, a titanium alloy T64 jacket roll metal base material coated with a high-density, high-adhesion alumina sprayed film by an atmospheric plasma method (roll diameter 1000 mmφ) was used.

  As a method for producing the electrode roller, a jacket roll metal base material made of titanium alloy T64 was coated with a high-density, high-adhesion alumina sprayed film by an atmospheric plasma method, and then tetramethoxysilane was diluted with ethyl acetate. The solution was applied onto the alumina sprayed film and dried, and the alumina sprayed film was irradiated with ultraviolet rays to cure the coating solution, and the alumina sprayed film was sealed. In this way, the metallic base material was coated with the dielectric, and the surface of the dielectric was polished and processed smoothly, so that Rmax was 5 μm.

It should be noted that the final dielectric porosity (penetrating porosity) is approximately 0% by volume, and the SiO _x content of the dielectric layer at this time is 75 mol%, and the final dielectric film The thickness was 1 mm and the relative dielectric constant of the dielectric was 10. The difference in coefficient of linear thermal expansion between the conductive metallic base material and the dielectric was 1.7 × 10 ⁻⁴ , and the heat resistant temperature was 260 ° C.

<Square tube electrode>
As the rectangular tube type electrode, a rectangular tube type titanium alloy T64 metallic base material coated with a dielectric similar to the above electrode roller under the same conditions was used (the dielectric of the rectangular tube type electrode is the above electrode). The same characteristics and physical properties as the roller.)

A steel transfer plate was attached to the rectangular tube electrode in the length direction, and six push-pull bolts were installed on the rectangular tube electrode via the transfer plate. Six square tube electrodes with push-pull bolts were installed around the electrode roller (per thin film forming apparatus). The gap between each square tube electrode and the electrode roller was 1.00 ± 0.01 mm. The total discharge area (total area of the surface where the square tube electrode faces the electrode roller) of the square tube electrode for six thin film forming apparatuses is 68 cm (length) × 4 cm (width (length in the substrate transport direction). )) × 6 (number of electrodes per thin film forming apparatus) × 6 (number of thin film forming apparatuses) = 9792 cm ² .

<Gas composition>
Discharge gas: Nitrogen 99.4% by volume
Thin film forming gas: tetraisopropoxy titanium 0.1% by volume
(Vaporized by mixing with argon gas using a vaporizer manufactured by Lintec)
Addition gas: 0.5% by volume of hydrogen gas

<Discharge conditions>
Power density: 3 W / cm ² on the electrode roller side
: Each square tube electrode side 1W / cm ²

<Adjustment of gap>
Using a DVR monitoring system DigiNet-4416 (manufactured by Fuji Electric Technica) connected with a plurality of CCDs, the gap between the electrode roller and the rectangular tube type electrode was monitored every 1 minute. Each time monitoring was completed, the image data captured by the monitoring system was subjected to image analysis by a computer, and the gap between the electrode roller and the rectangular tube electrode was calculated. When the gap calculated by image analysis deviates from the preset control width (± 2% of the absolute gap), each push-pull bolt installed on the square tube electrode is operated, and the electrode roller and square tube electrode The gap between and was adjusted and corrected.

<Others>
During plasma discharge, the temperature was adjusted and kept at 80 ° C. so that each of the electrode roller and each square tube electrode with push-pull bolt was 80 ° C., and the electrode roller was rotated by a drive. All six thin film forming apparatuses used 5 kHz for the first power source and 13.56 MHz for the second power source. For each of the first and second power sources, the relationship between the electric field strength (V1) of the first power source, the electric field strength (V2) of the second power source, and the electric field strength (IV) at the start of discharge in the discharge space. Was adjusted to satisfy V1>IV> V2. Each of the first and second filters was installed so that current from each applied electrode did not flow backward. The pressure between the opposing electrodes (discharge space) composed of the electrode roller and each square tube electrode is 103 kPa, and the discharge gas of each thin film forming apparatus and the inside of the plasma discharge treatment container are filled with the following gas. A TiO ₂ thin film was formed on the clear hard coat film of the coated substrate. However, the target film thickness of the TiO ₂ thin film was set to 80 nm, and the target refractive index of the TiO ₂ thin film was set to 1.95.

(1-4) Measurement of film thickness and refractive index of TiO ₂ thin film A. Using a Woollam ellipsometer (M-44), the film thickness / refractive index of the TiO ₂ thin film at the center of the substrate (the center in the width direction of the substrate) was measured. The vicinity of the position 10 m, 500 m, 1000 m, 1500 m away from the position where the thin film formation was started in the substrate was taken as the measurement position. The measurement results of the film thickness and refractive index of the TiO ₂ thin film are shown in Table 1 below. However, Table 1 also shows, as a comparative example, the measurement results when the gap was not adjusted by the above operation (1-3).

As shown in Table 1, when the gap between the electrode roller and the rectangular tube electrode is adjusted and kept almost constant, both the film thickness and refractive index of the TiO ₂ thin film approach the target values as much as possible, The film formation stability of the TiO ₂ thin film was dramatically improved.
If the gap between the electrode roller and the rectangular tube electrode is not adjusted, the TiO ₂ thin film becomes thinner as the distance from the position where the thin film formation is started, and the TiO ₂ thin film is refracted. The rate was increased, but it was assumed that the cause was that the gap between the electrode roller and the rectangular tube electrode was reduced with time due to the heat effect of the discharge phenomenon.

In Example 2, using a thin film forming apparatus similar to the thin film forming apparatus 130 described in the above embodiment, a clear hard coat film and a SiO ₂ thin film are formed (film formation) in this order on a film-like substrate. The film thickness of the SiO ₂ thin film was measured. Specific implementation procedures from the selection of the substrate to the measurement of the film thickness of the SiO ₂ thin film are as follows (2-1) to (2-4).

(2-1) Selection of base material The same base material as (1-1) of Example 1 was selected.
(2-2) Formation of clear hard coat film The same procedure as in (1-2) of Example 1 was performed.

(2-3) Formation of SiO ₂ thin film The same procedure as in (1-3) of Example 1 except that the gas composition, discharge conditions, and gap adjustment were changed in (1-3) of Example 1. An SiO ₂ thin film was formed on the clear hard coat film (the target film thickness of the SiO ₂ thin film was set at 95 nm). Details of the gas composition, discharge conditions, and gap adjustment are as follows.

<Gas composition>
Discharge gas: Nitrogen 98.9% by volume
Thin film forming gas: Tetraethoxysilane 0.1% by volume
(Vaporized by mixing with argon gas using a vaporizer manufactured by Lintec)
Additive gas: 1% by volume of oxygen gas

<Discharge conditions>
Power density: 6 W / cm ² on the electrode roller side
: Each square tube electrode side 3 W / cm ²

<Adjustment of gap>
Using a spectrophotometer MCPD-7000 manufactured by Otsuka Electronics Co., Ltd., the emission intensity of nitrogen gas having a wavelength of around 335 nm (discharge-specific nitrogen gas) was measured every 1 minute. Each time the luminescence intensity is measured, the measured luminescence intensity is taken into the computer as data, and the electrode roller and the rectangular tube electrode are obtained from the luminescence intensity data taken based on a predetermined calibration curve in which the luminescence intensity and the gap are associated with each other The gap between was calculated. When the gap calculated based on the calibration curve deviates from the preset control width (± 2% of the absolute gap), the push-pull bolts installed on the square tube electrode are operated, and the electrode roller and square tube The gap between the mold electrodes was adjusted and corrected.

(2-4) Measurement of film thickness / refractive index of SiO ₂ thin film In the same manner as in (1-4) of Example 1, the SiO ₂ thin film at the center of the substrate (center in the width direction of the substrate) The film thickness was measured. The measurement results of the film thickness of the SiO ₂ thin film are shown in Table 2 below. However, Table 2 also shows the measurement results when the gap was not adjusted by the operation (2-3) as a comparative example.

As shown in Table 2, when the gap between the electrode roller and the rectangular tube electrode is adjusted and kept almost constant, the film thickness of the SiO ₂ thin film is close to the target value and the SiO ₂ thin film is manufactured. Membrane stability has improved dramatically.
If the gap between the electrode roller and the square tube electrode is not adjusted, the thickness of the SiO ₂ thin film decreases as the distance from the position where the thin film formation is started. As in Example 1, it was estimated that the gap between the electrode roller and the rectangular tube electrode was reduced over time due to the influence of heat due to the discharge phenomenon.

  In Example 3, using a thin film forming apparatus similar to the thin film forming apparatus 130 described in the above embodiment, a clear hard coat film and an antireflection thin film are formed (film formation) in this order on a film-like substrate, and reflection is performed. The reflectance of the prevention thin film was measured. Specific implementation procedures from the selection of the base material to the measurement of the reflectance of the antireflection thin film are as follows (3-1) to (3-4).

(3-1) Selection of base material The same base material as (1-1) of Example 1 was selected.
(3-2) Formation of clear hard coat film The same procedure as in (1-2) of Example 1 was performed.

(3-3) Formation of antireflection thin film Cleared in the same manner as (1-3) in Example 1 except that the gas composition, discharge conditions, and gap adjustment were changed in (1-3) of Example 1. An antireflection thin film was formed (film formation) on the hard coat film. Specifically, in the same manner as in Example 1-3 (1-3), a medium refractive index film, a high refractive index film, and a low refractive index film were formed on the chestnut hard coat film in this order. An antireflection thin film composed of three films of a refractive index film and a low refractive index film was formed on the chestnut hard coat film. However, the target film thickness / target refractive index of the medium refractive index film is set to 77 nm and 1.70, the target film thickness / target refractive index of the high refractive index film is set to 65 nm and 1.95, and the low refractive index film is set. The target film thickness and the target refractive index were set to 95 nm and 1.45. Details of the gas composition, discharge conditions, and gap adjustment when the medium refractive index film, high refractive index film, and low refractive index film are formed are as follows.

<Composition of gas during formation of medium refractive index film>
Discharge gas: Nitrogen 99.4% by volume
Thin film forming gas: 0.1% by volume of dibutyldiacetoxytin
(Vaporized by mixing with argon gas using a vaporizer manufactured by Lintec)
Added gas: Oxygen 0.5% by volume

<Discharge conditions during formation of medium refractive index film>
Power density: 6 W / cm ² on the electrode roller side
: Each square tube electrode side 3 W / cm ²

<Gas composition when forming a high refractive index film>
Discharge gas: Nitrogen 99.4% by volume
Thin film forming gas: tetraisopropoxy titanium 0.1% by volume
(Vaporized by mixing with argon gas using a vaporizer manufactured by Lintec)
Addition gas: 0.5% by volume of hydrogen gas

<Discharge conditions when forming a high refractive index film>
Power density: 3 W / cm ² on the electrode roller side
: Each square tube electrode side 1W / cm ²

<Gas composition when forming a low refractive index film>
Discharge gas: Nitrogen 98.9% by volume
Thin film forming gas: Tetraethoxysilane 0.1% by volume
(Vaporized by mixing with argon gas using a vaporizer manufactured by Lintec)
Additive gas: 1% by volume of oxygen gas

<Discharge conditions when forming a low refractive index film>
Power density: 6 W / cm ² on the electrode roller side
: Each square tube electrode side 3 W / cm ²

<Adjustment of gap>
On the surface opposite to the discharge surface of the rectangular tube electrode (the surface facing the electrode roller), eight Digimatic indicators (545 series) manufactured by Mitutoyo are attached along the length direction of the rectangular tube electrode. The amount of deformation along the height direction of the mold electrode was measured every 1 minute. Each time the amount of deformation is measured, the measured value (measured amount of deformation) at each location where the indicator is attached is taken into the computer, and the measured value deviates from the preset control width (± 2% of the absolute gap). Then, each push-pull bolt installed on the rectangular tube type electrode was operated, and the gap between the electrode roller and the rectangular tube type electrode was adjusted and corrected.

(3-4) Measurement of Reflectivity of Antireflection Thin Film Continuously scanning the substrate on which the antireflection thin film is formed along the width direction with a spectral reflectance measuring machine MCPD-3000 manufactured by Otsuka Electronics Co., Ltd. ( And the reflectance of the antireflection thin film along the width direction of the substrate was measured. FIG. 13 shows a profile of the difference between the measured minimum reflectance and the average reflectance. As a comparative example, FIG. 14 shows a measurement result (a profile of the difference between the measured minimum reflectance and the average reflectance) when the gap is not adjusted by the operation (3-3).

  From the comparison result between FIG. 13 and FIG. 14, when the antireflection thin film is formed while adjusting the gap between the electrode roller and the rectangular tube electrode, the minimum reflectance of the antireflection thin film is almost the average minimum over the entire width of the substrate. It turned out to be close to the reflectivity (average of the minimum reflectivity over the entire width of the substrate), and it was found that a uniform antireflection thin film could be formed over the entire width of the substrate.

It is drawing which shows schematic structure of a thin film forming apparatus. It is a perspective view which shows an electrode roller. It is a perspective view which shows a rectangular tube type electrode. It is a side view which shows the structure of discharge space vicinity. It is a perspective view which shows the structure of discharge space vicinity. It is sectional drawing which shows the structure of the member distribute | arranged to the rectangular tube type electrode. It is a block diagram which shows the circuit structure of a thin film forming apparatus. It is a perspective view which shows the detection means replaced with an image sensor. It is a perspective view which shows the detection means replaced with an image sensor. It is a perspective view which shows the detection means replaced with an image sensor. It is sectional drawing which shows the adjustment means replaced with a push pull bolt. It is sectional drawing which shows the adjustment means replaced with a push pull bolt. 6 is a profile of the difference between the minimum reflectance and the average reflectance measured in Example 3. It is a comparison drawing of the profile of FIG.

Explanation of symbols

1 Image sensor (detection means)
2 Electromagnetic shielding box (electromagnetic shielding member)
8 Control device 11 Push-pull bolt (adjustment means)
20 Spectrophotometer (detection means)
21 Dial gauge (detection means, gauge)
22 Laser displacement meter (detection means, gauge)
30 Heat bolt (adjustment means)
40 Thermal deformation plate (adjustment means)
130 Thin Film Forming Device 135 Electrode Roller (Part of Counter Electrode)
136 Rectangular tube electrode (part of counter electrode)
F base material

Claims (26)

In a thin film forming apparatus that forms a thin film on a substrate by plasma treatment,
Counter electrodes arranged opposite to each other;
Detecting means for detecting a gap between the opposing electrodes;
Adjusting means for adjusting the gap;
A control device for controlling the adjusting means so that the gap becomes a preset value based on a detection result by the detecting means;
A thin film forming apparatus comprising: In a thin film forming apparatus that forms a thin film on a substrate by atmospheric pressure plasma treatment,
Counter electrodes arranged opposite to each other;
Detecting means for detecting a gap between the opposing electrodes;
Adjusting means for adjusting the gap;
A control device for controlling the adjusting means so that the gap becomes a preset value based on a detection result by the detecting means;
A thin film forming apparatus comprising: The thin film forming apparatus according to claim 1 or 2,
The counter electrode has a long shape,
A plurality of the detection means and the adjustment means are respectively disposed along the length direction of the counter electrode,
The thin film forming apparatus, wherein the control device controls each of the adjusting means based on a detection result by each of the detecting means so that the gap becomes a preset value. In the thin film formation apparatus as described in any one of Claims 1-3,
The detection means is an image sensor for monitoring the gap;
The control device analyzes and calculates a monitoring result obtained by the image sensor to calculate the gap, and controls the adjustment unit so that the calculated gap becomes the set value. The thin film forming apparatus according to claim 4.
The thin film forming apparatus, wherein the image sensor is covered with an electromagnetic wave shielding member that blocks electromagnetic waves. In the thin film forming apparatus according to claim 4 or 5,
The thin film forming apparatus, wherein the image sensor is a CCD, CMOS, or VMIS. In the thin film formation apparatus as described in any one of Claims 1-3,
The detection means is a spectrophotometer that measures the amount of light emitted from between the counter electrodes,
The control device calculates the gap from a measurement result obtained by the spectrophotometer, and controls the adjusting means so that the calculated gap becomes the set value. The thin film forming apparatus according to claim 7,
In the control device, a calibration curve that associates the light quantity and the gap with each other is stored in advance as data,
The control device calculates the gap from the calibration curve data according to the measurement result by the spectrophotometer, and controls the adjusting means so that the calculated gap becomes the set value. Forming equipment. In the thin film forming apparatus according to claim 7 or 8,
The spectrophotometer is covered with an electromagnetic wave shielding member for blocking electromagnetic waves. In the thin film formation apparatus as described in any one of Claims 1-3,
The detecting means is a gauge for measuring the deformation amount of the counter electrode;
The control device calculates the gap from a measurement result by the gauge, and controls the adjusting means so that the calculated gap becomes the set value. The thin film forming apparatus according to claim 10,
In the control device, a calibration curve in which the deformation amount and the gap are associated with each other is stored in advance as data,
The control device calculates the gap from data of the calibration curve according to the measurement result by the gauge, and controls the adjusting means so that the calculated gap becomes the set value. . The thin film forming apparatus according to claim 10 or 11,
The thin film forming apparatus, wherein the gauge is a dial gauge or a laser displacement meter. In the thin film forming apparatus according to any one of claims 1 to 12,
The thin film forming apparatus, wherein the adjusting means is a push-pull bolt, a heat bolt, or a heat deformation plate that deforms the counter electrode. In a thin film forming method of forming a thin film on a substrate by plasma treatment,
A method of forming a thin film, comprising: detecting a gap between opposing electrodes arranged opposite to each other, and adjusting the gap so that the gap becomes a preset value based on the detection result. In a thin film formation method of forming a thin film on a substrate by atmospheric pressure plasma treatment,
A method of forming a thin film, comprising: detecting a gap between opposing electrodes arranged opposite to each other, and adjusting the gap so that the gap becomes a preset value based on the detection result. The thin film forming method according to claim 14 or 15,
The counter electrode has a long shape,
The gap is detected over a plurality of locations along the length direction of the counter electrode, and the gap is set over a plurality of locations along the length direction of the counter electrode so that the gap becomes the set value based on the detection result. A thin film forming method comprising adjusting the thickness. In the thin film formation method as described in any one of Claims 14-16,
The gap is detected by an image sensor that monitors the gap, the gap is calculated by analyzing and calculating the monitoring result of the image sensor, and the gap is adjusted so that the calculated gap becomes the set value. A method for forming a thin film, comprising: The thin film forming method according to claim 17,
A method for forming a thin film, wherein the image sensor is covered with an electromagnetic wave shielding member that blocks electromagnetic waves. The thin film forming method according to claim 17 or 18,
The method of forming a thin film, wherein the image sensor is a CCD, CMOS, or VMIS. In the thin film formation method as described in any one of Claims 14-16,
The gap is detected by a spectrophotometer that measures the amount of light emitted from between the counter electrodes, the gap is calculated from the measurement result by the spectrophotometer, and the calculated gap is set to the set value. A method of forming a thin film, comprising adjusting a gap. The thin film forming method according to claim 20,
According to the measurement result of the spectrophotometer, the gap is calculated from calibration curve data in which the light quantity and the gap are associated with each other, and the gap is adjusted so that the calculated gap becomes the set value. A method for forming a thin film. The thin film forming method according to claim 20 or 21,
The method for forming a thin film, wherein the spectrophotometer is covered with an electromagnetic wave shielding member for blocking electromagnetic waves. In the thin film formation method as described in any one of Claims 14-16,
The gap is detected by a gauge that measures the deformation amount of the counter electrode, the gap is calculated from the measurement result by the gauge, and the gap is adjusted so that the calculated gap becomes the set value. A thin film forming method. The thin film forming method according to claim 23,
According to the measurement result by the gauge, the gap is calculated from calibration curve data in which the deformation amount and the gap are associated with each other, and the gap is adjusted so that the calculated gap becomes the set value. A method for forming a thin film. In the thin film formation method of Claim 23 or 24,
The method of forming a thin film, wherein the gauge is a dial gauge or a laser displacement meter. In the thin film formation method as described in any one of Claims 14-25,
A method of forming a thin film, comprising adjusting the gap with a push-pull bolt, a heat bolt, or a thermal deformation plate that deforms the counter electrode.

Images