JP2005052835A - Method for forming membrane pattern, conductive membrane wiring, electro-optic apparatus, electronic device, noncontact card medium, and thin-film transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and a device for forming a membrane pattern, capable of preventing the growth of a defect like a break or a short circuit or the like in a membrane pattern which is formed by the ink jet method, as well as conductive membrane wiring or the like. <P>SOLUTION: The method for forming the membrane pattern by discharging drops of a liquid containing conductive particulates on a predetermined membrane formation area on a substrate is provided with a surface treatment process of carrying out surface treatment on the substrate before discharging the drops. The surface treatment process establishes the contact angle to the liquid on the substrate. In particular, the contact angle is set at 15-45°. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a film pattern forming method, a conductive film wiring, an electro-optical device, an electronic apparatus, a non-contact card medium, and a thin film transistor.

For example, a lithography method is used for manufacturing wiring used in an electronic circuit or an integrated circuit. However, the lithography method requires a large-scale facility such as a vacuum apparatus and a complicated process, and the material use efficiency. However, almost a few percent of them must be discarded, and the manufacturing cost is high.
Therefore, as a process replacing the lithography method, a method of directly patterning a liquid containing a functional material on a base material by ink jet has been studied. For example, a liquid in which conductive fine particles are dispersed is directly patterned on a substrate by an ink jet method. There has been proposed a method of applying a heat treatment or laser irradiation to convert it into a conductive film pattern (see, for example, Patent Document 1).
US Pat. No. 5,132,248

  However, the above prior art has the following problems. That is, in the patterning by the ink jet method, the shape, size, position, etc. of the droplet (liquid) cannot be controlled on the substrate unless an appropriate treatment is performed on the substrate surface, and it is difficult to produce a conductive film pattern having a desired shape. However, the above patent document does not describe a detailed method for controlling the shape of the ejection pattern.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a film pattern forming method for suppressing the occurrence of defects such as disconnection and short circuit in a film pattern formed by an ink jet method.
In addition, the present invention provides a conductive film wiring that is less prone to defects such as disconnection and short circuit, and further provides an electro-optical device, an electronic device, a non-contact card medium, and a thin film transistor that are unlikely to cause a defect such as disconnection or short circuit of a wiring part For the purpose.

In order to solve the above problems, in the method for forming a film pattern of the present invention, a film for forming a film pattern by discharging droplets made of a liquid containing conductive fine particles to a predetermined film forming region on a substrate. A method of forming a pattern, which comprises performing a lyophobic process by performing a plasma process on the surface of the substrate before discharging the droplets, and performing a plasma process using oxygen as a reactive gas. A lyophilic process step for performing a lyophilic process on a predetermined region on the substrate, and a contact angle with respect to the liquid on the substrate is set by the lyophobic process process and the lyophilic process process. It is characterized by being.
Here, the “film formation region” is a region where a film pattern is to be formed, and is mainly composed of a single or a plurality of straight lines and curves. In addition, “defect” means a defect such as disconnection that occurs in the formed film pattern.
According to the above method, in the surface treatment process based on the plasma treatment, a contact angle is set such that no defects are generated in the formed film pattern, particularly metal wiring (conductive film wiring) composed of conductive fine particles. Therefore, it is possible to form a metal wiring that is less prone to defects such as disconnection or short circuit and that can be formed finely.
The contact angle is determined by the mutual relationship between the substrate side and the liquid side, and therefore depends on the properties on the liquid side. However, since the properties of the liquid ejected by the ink jet method are limited in surface tension, viscosity and the like, it is practically difficult to adjust the contact angle by adjusting only the properties of the liquid. Therefore, it is appropriate to set the contact angle by surface treatment on the substrate side.

In the method for forming a film pattern of the present invention, the contact angle is set based on a diameter of the droplet after being ejected onto the substrate.
According to this method, since the contact angle to be set is appropriately selected depending on the diameter of the droplet, a favorable desired film pattern can be formed.

The film pattern forming method of the present invention is characterized in that the lyophilic process is performed after the lyophobic process.
According to this, the substrate surface at the stage where the lyophobic treatment is completed usually has a higher lyophobic property than the desired lyophobic property. Can be relaxed.

Further, the film pattern forming method of the present invention is particularly characterized in that the contact angle is 15 ° or more and 45 ° or less.
According to this, a favorable desired film pattern can be formed without causing defects in the formed film pattern.
In particular, if the contact angle is too low, such as 14 ° or less, the droplets (dots) are extremely wet and spread, making it difficult to control the landing diameter and making the pattern difficult to form. On the other hand, if the contact angle is high, such as 46 ° or more, the pattern can be formed, but the adhesion to the substrate is weak, and when it is baked, it will come off due to the difference in thermal expansion coefficient with the substrate. There is a problem. Therefore, by setting the angle within the range of 15 degrees to 45 degrees, it is possible to control the wetting and spreading of the droplets (dots) as intended. Furthermore, there is an effect that the adhesion between the substrate and the pattern can be secured.

  The film pattern forming method of the present invention preferably includes a step of converting the liquid discharged onto the substrate into a conductive film by heat treatment or light treatment. Thereby, the electroconductivity of electroconductive fine particles is expressed and it can be set as the wiring which has electroconductivity. This heat treatment or light treatment may be performed each time after the droplets are discharged, or may be performed all at once after all the discharge steps are completed.

The thin film manufacturing apparatus of the present invention is a thin film manufacturing apparatus for forming a film pattern by discharging a liquid containing conductive fine particles to a predetermined film forming region on a substrate, and by the film pattern forming method described above. It is characterized by forming a film pattern.
According to the above apparatus, a thin film manufacturing apparatus that satisfies the requirement of suppressing the occurrence of defects occurring in the formed film pattern in a simple process, and further suppresses the occurrence of problems such as short circuits when a conductive film is formed. It becomes possible.

The conductive film wiring of the present invention is characterized by being formed by the film pattern forming method described above.
According to the present invention, it is possible to obtain a conductive film wiring that is less prone to defects such as disconnection and short circuit and that can be formed finely.

The electro-optical device according to the present invention includes the conductive film wiring described above.
Examples of the electro-optical device of the present invention include a liquid crystal display device, an organic electroluminescence display device, and a plasma display device.
In addition, an electronic apparatus according to the present invention includes the electro-optical device according to the present invention.
The non-contact card medium of the present invention is characterized in that the conductive film wiring according to the present invention is provided as an antenna circuit.
According to these inventions, it is possible to provide an electro-optical device, an electronic apparatus using the electro-optical device, and a non-contact type card medium that are less likely to cause defects such as disconnection or short circuit of a wiring part or an antenna. it can.

The thin film transistor of the present invention is characterized by being formed by the film pattern forming method described above.
According to the present invention, it is possible to obtain a thin film transistor that is less likely to cause defects such as disconnection and short circuit and that can be finely formed.
According to another aspect of the invention, an electro-optical device includes the thin film transistor according to the invention.
According to these inventions, it is possible to provide an electro-optical device that is less likely to cause defects such as disconnection or short-circuiting of the wiring portion, and that has fewer defects.

Embodiments according to the present invention will be described below.
[First Embodiment]
As a first embodiment, a wiring forming method as an example of a film pattern forming method of the present invention will be described. The wiring forming method according to the present embodiment includes a surface treatment process, a discharge process, and a heat treatment / light treatment process.
Hereinafter, each step will be described.

(Surface treatment process)
As the substrate on which the conductive film wiring is to be formed, various substrates such as a Si wafer, quartz glass, glass, a plastic film, and a metal plate can be used. Further, a substrate in which a semiconductor film, a metal film, a dielectric film, an organic film, or the like is formed as a base layer on the surface of these various material substrates may be used as a substrate on which a conductive film wiring is to be formed.

The surface of the substrate on which the conductive film wiring is to be formed is preferably controlled to have liquid repellency (wetting) with respect to the liquid containing conductive fine particles. Specifically, the contact angle of the liquid with respect to the substrate surface is controlled. It is desirable that the angle is 15 ° or more and 45 ° or less. Further, in order to determine a desired contact angle set value within the above contact angle range, first, the type of substrate on which the conductive film wiring is to be formed and the type of droplet to be adopted are determined, and this condition is determined. The relationship of the contact angle with respect to the droplet diameter after landing on the substrate is obtained in advance, and the desired contact angle is determined based on the droplet diameter.
Below, the surface treatment method for obtaining a desired contact angle is demonstrated.

In this embodiment, the surface of the substrate is subjected to a lyophobic treatment so that a predetermined contact angle with respect to the liquid containing the conductive fine particles becomes a desired value, and then a lyophilic treatment is performed. carry out.
First, a method for applying a lyophobic treatment to the surface of the substrate will be described.
One method of lyophobic treatment is a method of forming a self-assembled film made of an organic molecular film or the like on the surface of a substrate. The organic molecular film for treating the substrate surface has a functional group capable of binding to the substrate on one end side, and modifies the surface property of the substrate to liquid repellency etc. on the other end side (controls the surface energy). In addition to having a functional group and a linear or partially branched carbon chain linking these functional groups, it is bonded to a substrate and self-assembles to form a molecular film, for example, a monomolecular film.

  The self-assembled film is composed of a binding functional group capable of reacting with constituent atoms such as a base layer such as a substrate and other linear molecules, and a compound having extremely high orientation due to the interaction of the linear molecules, It is a film formed by orientation. Since this self-assembled film is formed by orienting single molecules, the film thickness can be extremely reduced, and the film is uniform at the molecular level. That is, since the same molecule is located on the surface of the film, uniform and excellent liquid repellency can be imparted to the surface of the film.

  For example, when fluoroalkylsilane is used as the compound having high orientation, each compound is oriented so that the fluoroalkyl group is located on the surface of the film, and a self-assembled film is formed. Uniform liquid repellency is imparted to the surface.

  Examples of compounds that form a self-assembled film include heptadecafluoro-1,1,2,2 tetrahydrodecyltriethoxysilane, heptadecafluoro-1,1,2,2 tetrahydrodecyltrimethoxysilane, and heptadecafluoro. -1,1,2,2 tetrahydrodecyltrichlorosilane, tridecafluoro-1,1,2,2 tetrahydrooctyltriethoxysilane, tridecafluoro-1,1,2,2 tetrahydrooctyltrimethoxysilane, tridecafluoro Examples thereof include fluoroalkylsilanes (hereinafter referred to as “FAS”) such as -1,1,2,2 tetrahydrooctyltrichlorosilane, trifluoropropyltrimethoxysilane, and the like. In use, it is preferable to use one compound alone, but the use of a combination of two or more compounds is not limited as long as the intended purpose of the present invention is not impaired. In the present invention, the FAS is preferably used as the compound that forms the self-assembled film in order to provide adhesion to the substrate and good liquid repellency.

FAS is generally represented by the structural formula RnSiX (4-n). Here, n represents an integer of 1 to 3, and X is a hydrolyzable group such as a methoxy group, an ethoxy group, or a halogen atom. R is a fluoroalkyl group, and is (CF ₃ ) (CF ₂ ) x (CH ₂ ) y (where x represents an integer of 0 to 10 and y represents an integer of 0 to 4). When having a structure and a plurality of R or X are bonded to Si, all of R or X may be the same or different. The hydrolyzable group represented by X forms silanol by hydrolysis, reacts with the hydroxyl group of the base such as the substrate (glass, silicon), etc., and bonds to the substrate with a siloxane bond. On the other hand, since R has a fluoro group such as (CF ₃ ) on the surface, the base surface such as a substrate is modified to a surface that does not get wet (surface energy is low).

A self-assembled film made of an organic molecular film or the like is formed on a substrate when the above raw material compound and the substrate are placed in the same sealed container and left at room temperature for about 2 to 3 days. Further, by holding the entire sealed container at 100 ° C., it is formed on the substrate in about 3 hours. What has been described above is the formation method from the gas phase, but the self-assembled film can also be formed from the liquid phase.
For example, the self-assembled film can be obtained on the substrate by immersing the substrate in a solution containing the raw material compound, washing and drying.
Note that before the self-assembled film is formed, it is desirable to perform pretreatment by irradiating the substrate surface with ultraviolet light or washing with a solvent.

As another method of lyophobic treatment, there is a method of plasma irradiation under normal pressure or vacuum.
Various kinds of gas used for the plasma treatment can be selected in consideration of the surface material of the substrate. For example, a fluorocarbon gas such as tetrafluoromethane, perfluorohexane, or perfluorodecane can be used as the processing gas. In this case, a liquid repellent fluorinated polymer film can be formed on the surface of the substrate.

  The liquid repellent treatment can also be performed by sticking a film having a desired liquid repellency, such as a polyimide film processed with tetrafluoroethylene, to the substrate surface. In addition, you may use a polyimide film as a board | substrate as it is.

Next, a method for performing the lyophilic process will be described.
Since the substrate surface at the stage where the above-described lyophobic treatment is completed usually has a higher liquid repellency than the desired liquid repellency, the lyophobic treatment reduces the liquid repellency.
Examples of the lyophilic treatment include a method of irradiating ultraviolet light of 170 to 400 nm. As a result, the liquid-repellent film once formed can be partially and evenly destroyed as a whole, and the liquid-repellent property can be relaxed.
In this case, the degree of relaxation of liquid repellency can be adjusted by the irradiation time of ultraviolet light, but can also be adjusted by a combination with the intensity of ultraviolet light, wavelength, heat treatment (heating), or the like.

  As another method of lyophilic treatment, plasma treatment using oxygen as a reaction gas can be given. As a result, the liquid-repellent film once formed can be partially and evenly altered to alleviate the liquid-repellent property.

Still another method of the lyophilic process includes a process of exposing the substrate to an ozone atmosphere.
As a result, the liquid-repellent film once formed can be partially and evenly altered to alleviate the liquid-repellent property.
In this case, the degree of relaxation of the liquid repellency can be adjusted by irradiation output, distance, time, and the like.

(Discharge process)
When the wiring is formed, the liquid material discharged in the discharge process is a liquid material containing conductive fine particles (pattern forming component). As the liquid containing conductive fine particles, a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium is used. The conductive fine particles used here include fine particles of conductive polymer or superconductor in addition to metal fine particles containing any of gold, silver, copper, palladium, and nickel.

The conductive fine particles can be used by coating the surface with an organic substance or the like in order to improve dispersibility. Examples of the coating material that coats the surface of the conductive fine particles include organic solvents such as xylene and toluene, citric acid, and the like.
The particle diameter of the conductive fine particles is preferably 5 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, nozzle clogging is likely to occur, and it becomes difficult to discharge by the ink jet method. On the other hand, if the thickness is smaller than 5 nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of the organic matter in the obtained film becomes excessive.

The liquid dispersion medium containing conductive fine particles preferably has a vapor pressure at room temperature of 0.001 mmHg or more and 200 mmHg or less (about 0.133 Pa or more and 26600 Pa or less). This is because when the vapor pressure is higher than 200 mmHg, the dispersion medium rapidly evaporates after discharge, making it difficult to form a good film.
The vapor pressure of the dispersion medium is more preferably 0.001 mmHg or more and 50 mmHg or less (about 0.133 Pa or more and 6650 Pa or less). When the vapor pressure is higher than 50 mmHg, nozzle clogging due to drying is likely to occur when droplets are ejected by the ink jet method, and stable ejection becomes difficult. On the other hand, in the case of a dispersion medium whose vapor pressure at room temperature is lower than 0.001 mmHg, drying is slow and the dispersion medium tends to remain in the film, and a high-quality conductive film can be obtained after heat and / or light treatment in the subsequent process. Hateful.

  The dispersion medium to be used is not particularly limited as long as it can disperse the above-mentioned conductive fine particles and does not cause aggregation. In addition to water, alcohols such as methanol, ethanol, propanol and butanol, n- Hydrocarbon compounds such as heptane, n-octane, decane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydronaphthalene, cyclohexylbenzene, or ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl Ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2-methoxyethyl) ether Le, p- ether compounds such as dioxane, propylene carbonate, .gamma.-butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, may be mentioned polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferable, and more preferable dispersion media are preferable from the viewpoints of fine particle dispersibility, dispersion stability, and ease of application to the inkjet method. Examples thereof include water and hydrocarbon compounds. These dispersion media can be used alone or as a mixture of two or more.

  The dispersoid density | concentration in the case of disperse | distributing the said electroconductive fine particles to a dispersion medium is 1 mass% or more and 80 mass% or less, and can be adjusted according to the film thickness of a desired electrically conductive film. If it exceeds 80% by mass, aggregation tends to occur and it is difficult to obtain a uniform film.

  The surface tension of the conductive fine particle dispersion is preferably in the range of 0.02 N / m to 0.07 N / m. When the liquid is ejected by the ink jet method, if the surface tension is less than 0.02 N / m, the wettability of the ink composition with respect to the nozzle surface increases, and thus flight bending easily occurs, and exceeds 0.07 N / m. This is because the shape of the meniscus at the nozzle tip is not stable, and it becomes difficult to control the discharge amount and the discharge timing.

  In order to adjust the surface tension, a trace amount of a surface tension adjusting agent such as a fluorine-based material, a silicon-based material, or a nonionic material can be added to the dispersion liquid in a range that does not unduly reduce the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the liquid to the substrate, improves the leveling property of the film, and helps to prevent the occurrence of crushing of the coating film and the generation of the itchy skin. The dispersion liquid may contain an organic compound such as alcohol, ether, ester, or ketone as necessary.

The viscosity of the dispersion is preferably 1 mPa · s or more and 50 mPa · s or less.
When ejected by the ink jet method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of ink, and if the viscosity is greater than 50 mPa · s, the nozzle hole is clogged frequently. This is because it becomes difficult to smoothly discharge droplets.

  In this embodiment, droplets of the dispersion liquid are ejected from an inkjet head and dropped onto a place where a wiring on the substrate is to be formed. At this time, it is necessary to control the overlapping degree of the droplets to be discharged continuously so as not to cause a liquid pool (bulge). Further, it is also possible to employ a discharge method in which a plurality of droplets are discharged so as not to contact each other in the first discharge, and the space is filled by the second and subsequent discharges.

  After discharging the droplets, a drying process is performed as necessary to remove the dispersion medium. The drying process can be performed by lamp annealing, for example, in addition to a process using a normal hot plate or an electric furnace for heating the substrate. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used as a light source. These light sources generally have a power output in the range of 10 W or more and 5000 W or less, but in this embodiment, a range of 100 W or more and 1000 W or less is sufficient.

(Heat treatment / light treatment process)
The dried film after the discharging process needs to completely remove the dispersion medium in order to improve the electrical contact between the fine particles. Further, when a coating material such as an organic material is coated on the surface of the conductive fine particles in order to improve dispersibility, it is also necessary to remove this coating material. For this reason, the substrate after the discharge process is subjected to heat treatment and / or light treatment.

  The heat treatment and / or light treatment is usually performed in the air, but can be performed in an inert gas atmosphere such as nitrogen, argon, helium, etc., if necessary. The treatment temperature of heat treatment and / or light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as fine particle dispersibility and oxidation, the presence and amount of coating material, It is determined appropriately in consideration of the heat resistant temperature. For example, in order to remove the coating material made of organic matter, it is necessary to bake at about 300 ° C. Moreover, when using a board | substrate, such as a plastics, it is preferable to carry out at room temperature or more and 100 degrees C or less.

The heat treatment and / or light treatment can be performed by lamp annealing in addition to treatment by a normal hot plate, electric furnace or the like. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used as a light source. These light sources generally have a power output in the range of 10 W or more and 5000 W or less, but in this embodiment, a range of 100 W or more and 1000 W or less is sufficient. Through the above steps, the dry film after the discharge process is converted into a conductive film while ensuring electrical contact between the fine particles.
Thus, the conductive film formed according to the present embodiment can form good desired conductive film wiring without causing defects such as disconnection.

[Second Embodiment]
As a second embodiment, a wiring forming apparatus for carrying out the wiring forming method of the first embodiment will be described as an example of the thin film manufacturing apparatus of the present invention. A discharge method using the wiring forming apparatus will be described.

  FIG. 1 is a schematic perspective view of the wiring forming apparatus according to the present embodiment. As shown in FIG. 1, the wiring forming apparatus 20 includes an inkjet head group 1, an X-direction guide shaft 2 for driving the inkjet head group 1 in the X direction, and an X-direction drive motor that rotates the X-direction guide shaft 2. 3 is provided. Also, a mounting table 4 for mounting the substrate 11, a Y-direction guide shaft 5 for driving the mounting table 4 in the Y direction, and a Y-direction drive motor 6 for rotating the Y-direction guide shaft 5 are provided. Yes. The X-direction guide shaft 2 and the Y-direction guide shaft 5 each include a base 7 that is fixed at a predetermined position, and a control device 8 is provided below the base 7. Furthermore, a cleaning mechanism unit 14 and a heater 15 are provided.

  The inkjet head group 1 includes a plurality of inkjet heads that discharge a dispersion liquid containing conductive fine particles from nozzles (discharge ports) and apply the dispersion liquid to a substrate at predetermined intervals. Each of the plurality of inkjet heads can individually discharge the dispersion according to the discharge voltage supplied from the control device 8. The inkjet head group 1 is fixed to an X direction guide shaft 2, and an X direction drive motor 3 is connected to the X direction guide shaft 2. The X direction drive motor 3 is a stepping motor or the like, and rotates the X direction guide shaft 2 when a drive pulse signal in the X axis direction is supplied from the control device 8. When the X direction guide shaft 2 is rotated, the inkjet head group 1 is moved in the X axis direction with respect to the base 7.

Here, details of a plurality of inkjet heads constituting the inkjet head group 1 will be described. 2 and 3 are views showing the inkjet head 30. FIG.
As shown in FIG. 2A, the inkjet head 30 includes a nozzle plate 32 made of, for example, stainless steel and a vibration plate 33, and both are joined via a partition member (reservoir plate) 34. A plurality of spaces 35 and a liquid reservoir 36 are formed between the nozzle plate 32 and the diaphragm 33 by the partition member 34. Each space 35 and the liquid reservoir 36 are filled with a liquid material, and each space 35 and the liquid reservoir 36 communicate with each other via a supply port 37. The nozzle plate 32 is formed with a plurality of nozzle holes 38 for injecting the liquid material from the space 35 in a state where the nozzle holes 38 are aligned vertically and horizontally. On the other hand, a hole 39 for supplying a liquid material to the liquid reservoir 36 is formed in the vibration plate 33.

  Further, a piezoelectric element (piezo element) 40 is joined to the surface of the diaphragm 33 opposite to the surface facing the space 15 as shown in FIG. The piezoelectric element 40 is positioned between a pair of electrodes 41 and is configured to bend so that when it is energized, it projects outward. The diaphragm 33 to which the piezoelectric element 40 is bonded in such a configuration is bent integrally with the piezoelectric element 40 at the same time so that the volume of the space 35 is increased. It is going to increase. Therefore, the liquid corresponding to the increased volume in the space 35 flows from the liquid reservoir 36 through the supply port 37. Further, when energization to the piezoelectric element 40 is released from such a state, both the piezoelectric element 40 and the diaphragm 33 return to their original shapes. Therefore, since the space 35 also returns to its original volume, the pressure of the liquid material inside the space 35 rises, and the liquid droplets 42 are ejected from the nozzle holes 38 toward the substrate.

  In addition, the inkjet head 30 having such a configuration has a substantially rectangular bottom shape, and as shown in FIG. 3, the nozzles N (nozzle holes 38) are arranged in a rectangular shape in a state where they are vertically aligned at equal intervals. It is arranged. In this example, the nozzles arranged every other nozzle in the nozzle row arranged in the vertical direction, that is, the long side direction are set as main nozzles (first nozzles) Na, and these main nozzles are arranged. The nozzles arranged between the nozzles Na are sub-nozzles (second nozzles) Nb.

Each of these nozzles N (nozzles Na, Nb) is provided with a piezoelectric element 40 independently of each other, so that the discharging operation is performed independently. That is, by controlling the discharge waveform as an electrical signal sent to the piezoelectric element 40, the discharge amount of the droplets from each nozzle N can be adjusted and changed. Here, such control of the discharge waveform is performed by the control device 8, and based on such a configuration, the control device 8 changes the discharge amount for changing the droplet discharge amount from each nozzle N. It also functions as an adjusting means.
The method of the ink jet head 30 is not limited to the piezo jet type using the piezoelectric element 40. For example, a thermal method can be adopted, and in this case, the application time is changed. Thus, the droplet discharge amount can be changed.

  Returning to FIG. 1, the mounting table 4 is for mounting the substrate 11 to which the dispersion liquid is applied by the wiring forming device 20, and includes a mechanism for fixing the substrate 11 at a reference position. The mounting table 4 is fixed to the Y-direction guide shaft 5, and Y-direction drive motors 6 and 16 are connected to the Y-direction guide shaft 5. The Y-direction drive motors 6 and 16 are stepping motors or the like, and rotate the Y-direction guide shaft 5 when a drive pulse signal in the Y-axis direction is supplied from the control device 8. When the Y direction guide shaft 5 is rotated, the mounting table 4 moves in the Y axis direction with respect to the base 7.

  The cleaning mechanism unit 14 includes a mechanism for cleaning the inkjet head group 1. The cleaning mechanism unit 14 is moved along the Y-direction guide shaft 5 by the Y-direction drive motor 16. The movement of the cleaning mechanism unit 14 is also controlled by the control device 8.

  Here, the heater 15 is a means for heat-treating the substrate 11 by lamp annealing, and performs heat treatment for evaporating and drying the liquid discharged on the substrate and converting it into a conductive film. The heater 15 is also turned on and off by the control device 8.

  In the wiring forming apparatus 20 of the present embodiment, in order to discharge the dispersion liquid to a predetermined wiring forming region, a predetermined driving pulse signal is sent from the control device 8 to the X direction driving motor 3 and / or the Y direction driving motor 6. By supplying and moving the inkjet head group 1 and / or the mounting table 4, the inkjet head group 1 and the substrate 11 (mounting table 4) are relatively moved. During this relative movement, a discharge voltage is supplied from the control device 8 to a predetermined inkjet head 30 in the inkjet head group 1, and the dispersion liquid is ejected from the inkjet head 30.

  In the wiring forming apparatus 20 of the present embodiment, the ejection amount of the droplets from each inkjet head 30 of the inkjet head group 1 can be adjusted by the magnitude of the ejection voltage supplied from the control device 8. The pitch of the droplets discharged onto the substrate 11 is determined by the relative movement speed between the inkjet head group 1 and the substrate 11 (mounting table 4) and the ejection frequency (ejection voltage supply frequency) from the inkjet head group 1. The

According to the wiring forming apparatus 20 of the present embodiment, it is possible to achieve thinning and thickening without causing bulges, and to form a conductive film having a uniform thickness and a good edge shape. Become.
Therefore, according to the present embodiment, it is possible to form a conductive film wiring that is thick and advantageous for electrical conduction, hardly causes defects such as disconnection and short circuit, and can be formed finely.

Next, a discharge method (material placement step) using the wiring forming apparatus 20 will be described with reference to FIGS. 4 to 10 and FIG.
In this step, a liquid film containing a conductive film wiring forming material is ejected onto the substrate 11 from the inkjet head 30 of the wiring forming apparatus 20 to form a linear film pattern (wiring pattern) W on the substrate 11. It is a process of forming. As described above, the liquid material is a liquid in which conductive fine particles such as metal, which is a conductive film wiring forming material, are dispersed in a dispersion medium.

  In FIG. 4, the material placement step is performed by ejecting liquid material droplets from the nozzles N of the inkjet head 30 of the wiring forming apparatus 20 and placing them on the substrate 11, thereby placing the film pattern W on the substrate 11 in the center in the line width direction. A first step (see FIG. 4A) for forming a portion (center pattern) W1, and a first step for forming one side portion (first side pattern) W2 with respect to the center pattern W1 formed on the substrate 11. 2 processes (refer FIG.4 (b)), and the 3rd process (refer FIG.4 (c)) which forms the other side part (2nd side part pattern) W3 with respect to the center pattern W1 formed in the board | substrate 11. And have. By these first, second, and third steps, a linear film pattern W as shown in FIG. 4C is formed.

  In the first step, as shown in FIG. 4A, liquid material droplets are ejected from the inkjet head 30 and arranged on the substrate 11 at a constant distance interval (pitch). Then, by repeating this droplet placement operation, a linear center pattern W1 constituting a part of the film pattern W is formed in the center of the film pattern W formation scheduled region W4 on the substrate 11. In addition, the surface of the substrate 11 is processed in advance to have a desired liquid repellency, and the spread of droplets disposed on the substrate 11 is suppressed. Therefore, the pattern shape can be reliably controlled to be in a good state and the film thickness can be easily increased.

  Here, after disposing the droplets for forming the central pattern W1 on the substrate 11, a drying process is performed as necessary in order to remove the dispersion medium. The drying treatment may be a light treatment using lamp annealing in addition to a general heat treatment using a heating device such as a hot plate, an electric furnace, and a hot air generator.

  Next, in the second step, as shown in FIG. 4B, a liquid material droplet is ejected from the inkjet head 30, and thereby the linear first side portion adjacent to one side of the central pattern W 1. A pattern W2 is formed. Here, when forming the first side pattern W2, the inkjet head 30 discharges the droplets so that at least a part of the discharged droplets and the central pattern W1 formed on the substrate 11 overlap. As a result, the central pattern W1 and the liquid droplets forming the first side pattern W2 are reliably connected, and the formed film pattern W does not have a discontinuous portion of the conductive film wiring forming material. Also in the second step, the droplets are arranged on the substrate 11 at a constant pitch, and by repeating this arrangement operation, a part of the film pattern W is formed on one side of the region W4 where the film pattern W is to be formed. Are formed, and the central pattern W1 and the first side pattern W2 are integrated.

  In this case as well, after the droplets for forming the first side pattern W2 are arranged on the substrate 11, an intermediate drying process is performed as necessary to remove the dispersion medium.

  Next, in the third step, as shown in FIG. 4C, droplets of the liquid material are ejected from the ink jet head 30, thereby causing the linear second side portion adjacent to the other side of the central pattern W1. A pattern W3 is formed. Also in this case, when forming the second side pattern W3, the inkjet head 30 discharges the droplets so that at least a part of the discharged droplets and the central pattern W1 formed on the substrate 11 overlap. As a result, the central pattern W1 and the droplets forming the second side pattern W3 are securely connected, and a discontinuous portion of the conductive film wiring forming material does not occur in the formed film pattern W. Thus, the central pattern W1 and the second side pattern W3 are integrated, and the three linear patterns W1, W2, and W3 are integrated to form a wide film pattern W. In the third step, the droplets are arranged on the substrate at a constant pitch. By repeating this arrangement operation, a part of the film pattern W is formed on the other side of the region W4 where the film pattern W is to be formed. A second side pattern W3 is formed.

  At this time, the line width of the final linear film pattern W can be controlled by adjusting the discharge position (distance from the central pattern W) of the droplets discharged in the second and third steps. Further, by changing the height (thickness) of the plurality of patterns W1, W2, and W3 formed in each of the first, second, and third steps from the surface of the substrate 11, the film pattern after integration is changed. The film thickness of W can be controlled.

Next, a procedure for forming the linear center pattern W1 and the side patterns W2 and W3 will be described with reference to FIGS.
First, as shown in FIG. 5A, the droplets L1 ejected from the inkjet head 30 are sequentially arranged on the substrate 11 with a predetermined interval. In other words, the inkjet head 30 is arranged so that the droplets L1 do not overlap on the substrate 11 (first arrangement step). In this example, the arrangement pitch H1 of the droplets L1 is set to be larger than the diameter of the droplets L1 immediately after being arranged on the substrate 11. As a result, the droplets L1 immediately after being placed on the substrate 11 do not overlap (but do not contact), and the droplets L1 are prevented from coalescing and spreading on the substrate 11. The arrangement pitch H1 of the droplets L1 is set to be not more than twice the diameter of the droplets L1 immediately after being arranged on the substrate 11.

  Here, after disposing the droplets L1 on the substrate 11, a drying process can be performed as necessary in order to remove the dispersion medium. As described above, the drying treatment may be a light treatment using lamp annealing in addition to a general heat treatment using a heating device such as a hot plate, an electric furnace, and a hot air generator. In this case, not only the dispersion medium but also the degree of heating and light irradiation may be increased until the dispersion liquid is converted into a conductive film, but it is sufficient if the dispersion medium can be removed to some extent.

  Next, as shown in FIG. 5B, the above-described droplet placement operation is repeated. That is, as in the previous time shown in FIG. 5A, the liquid material is ejected from the inkjet head 30 as droplets L2, and the droplets L2 are arranged on the substrate 11 at regular intervals. At this time, the volume of the droplet L2 (the amount of the liquid material per droplet) and the arrangement pitch H2 thereof are the same as the previous droplet L1. The arrangement position of the droplet L2 is shifted by 1/2 pitch from the previous droplet L1, and the current droplet L2 is arranged at an intermediate position between the previous droplets L1 disposed on the substrate 11. (Second arrangement step).

  As described above, the arrangement pitch H1 of the droplets L1 on the substrate 11 is larger than the diameter of the droplets L1 immediately after being arranged on the substrate 11 and is not more than twice the diameter. For this reason, the droplet L2 is arranged at an intermediate position between the droplets L1, so that the droplet L2 partially overlaps the droplet L1, and the gap between the droplets L1 is filled. At this time, the current droplet L2 and the previous droplet L1 are in contact with each other, but since the dispersion medium has already been completely or partially removed from the previous droplet L1, the two merge together and spread on the substrate 11. There are few.

  In FIG. 5B, the position where the droplet L2 starts to be arranged is on the same side as the previous time (left side shown in FIG. 5A), but may be on the opposite side (right side). By ejecting droplets during the reciprocating movement in each direction, the distance of relative movement between the inkjet head 30 and the substrate 11 can be reduced.

  After disposing the droplet L2 on the substrate 11, it is possible to perform a drying treatment as necessary in order to remove the dispersion medium as in the previous case.

  By repeating such a series of droplet placement operations a plurality of times, the gaps between the droplets placed on the substrate 11 are filled, and as shown in FIG. 5C, a central pattern that is a linear continuous pattern is formed. W1 and side patterns W2 and W3 are formed on the substrate 11. In this case, by increasing the number of times the droplet placement operation is repeated, the droplets sequentially overlap the substrate 11, and the film thickness of the patterns W1, W2, and W3, that is, the height (thickness) from the surface of the substrate 11 increases. The height (thickness) of the linear patterns W1, W2, and W3 is set according to the desired film thickness required for the final film pattern, and the droplet placement operation is performed according to the set film thickness. The number of repetitions is set.

  In addition, the formation method of a linear pattern is not limited to what was shown to Fig.5 (a)-(c). For example, it is possible to arbitrarily set the arrangement pitch of the droplets and the shift amount at the time of repetition, and the arrangement pitches of the droplets on the substrate 11 when forming the patterns W1, W2, and W3 are set to different values. May be. For example, when the droplet pitch when forming the central pattern W1 is H1, the droplet pitch when forming the side patterns W2 and W3 may be wider than H1 (for example, H1 × 2). Of course, the pitch may be narrower than H1 (for example, H1 × 0.5). Further, the volume of the droplets when forming the patterns W1, W2, and W3 may be set to different values. Alternatively, the droplet placement atmosphere (temperature, humidity, etc.) that is the atmosphere in which the substrate 11 and the inkjet head 30 are placed in the first, second, and third steps, that is, the material placement environment conditions are set to different conditions. May be.

  In the present embodiment, the plurality of side patterns W2 and W3 are formed one by one, but two may be formed simultaneously. Here, there is a possibility that the total number of drying processes may be different between the case where a plurality of patterns W2 and W3 are formed one by one and the case where two patterns are simultaneously formed, so that the liquid repellency of the substrate 11 is not impaired. The drying conditions should be determined as follows.

  In the present embodiment, one central pattern W1 is formed in the first step, but two or more central patterns W1 may be formed. A film pattern having a wider line width can be easily formed by discharging droplets to both sides of the plurality of central patterns W1 and continuing them.

  Next, an example of the order in which droplets are ejected onto the substrate will be described with reference to FIGS. As shown in these drawings, a bitmap having pixels, which are a plurality of grid-like unit regions, on which liquid material droplets are ejected is set on the substrate 11. The inkjet head 30 ejects droplets to pixel positions set by the bitmap. Here, one pixel is set to a square. The ink jet head 30 ejects droplets from the nozzle N while scanning the substrate 11 in the Y-axis direction. In the description using FIG. 6 to FIG. 9, “1” is given to the droplet ejected at the first scanning, and the droplet ejected at the second, third,..., N-th scanning. “2”, “3”,..., “N” are attached to. In the following description, it is assumed that a film pattern W is formed by discharging droplets to each of the regions (pattern formation scheduled regions) indicated by gray in FIG.

  As shown in FIG. 6A, at the time of the first scan, a droplet is ejected while forming one pixel in the central pattern formation scheduled region in order to form the central pattern W1. Here, the droplets ejected to the substrate 11 are wetted and spread on the substrate 11 by landing on the substrate 11. That is, as shown by a circle in FIG. 6A, a droplet that has landed on the substrate 11 spreads so as to have a diameter D larger than the size of one pixel. Here, since the droplets are ejected at a predetermined interval (one pixel) in the Y-axis direction, the droplets arranged on the substrate 11 are set so as not to overlap each other. By doing so, it is possible to prevent the liquid material from being excessively provided on the substrate 11 in the Y-axis direction and to prevent the occurrence of bulges.

  In FIG. 6A, the liquid droplets arranged on the substrate 11 are arranged so as not to overlap each other, but the liquid droplets may be arranged so as to slightly overlap each other. Further, here, the liquid droplets are ejected with one pixel being opened, but the liquid droplets may be ejected with an interval of an arbitrary number of two or more pixels. In this case, it is only necessary to interpolate between the droplets on the substrate 11 by increasing the scanning operation and ejection operation of the inkjet head 30 with respect to the substrate 11.

  FIG. 6B is a schematic diagram when droplets are ejected from the nozzle N of the inkjet head 30 to the substrate 11 by the second scanning. In FIG. 6B, “2” is given to the droplets ejected in the second scanning. During the second scan, the droplets are ejected so as to interpolate between the droplets “1” ejected during the first scan. Then, droplets are continuous in the first and second scanning and discharging operations, and a central pattern W1 is formed.

Next, the inkjet head 30 and the substrate 11 are relatively moved in the X-axis direction by the size of one pixel. Here, the inkjet head 30 is moved stepwise by one pixel in the −X direction with respect to the substrate 11. Then, the inkjet head 30 performs the third scan. As a result, as shown in FIG. 7A, the droplet “3” for forming the first side pattern W2 is arranged on the substrate 11 so as to be adjacent to the −X side of the central pattern W1. .
Again, the droplet “3” is arranged with one pixel in the Y-axis direction. Here, the droplet “3” in the first scanning after the step movement of the inkjet head 30 in the X-axis direction (that is, the third scanning in the whole) is the liquid at the first scanning before the step movement. It is arranged at a position adjacent to the droplet “1” with respect to the X axis.

  FIG. 7B is a schematic diagram when droplets are ejected from the inkjet head 30 to the substrate 11 by the fourth scan. In FIG. 7B, “4” is given to the droplets ejected during the fourth scanning. During the fourth scan, the droplets are ejected so as to interpolate between the droplets “3” ejected during the third scan. Then, the droplets are continuous in the third and fourth scanning and discharging operations, and the first side pattern W2 is formed. Here, the droplet “4” at the second scanning after the step movement (that is, at the fourth scanning in the whole) is the X axis with respect to the droplet “2” at the second scanning before the step movement. Are arranged at adjacent positions.

  Next, the inkjet head 30 and the substrate 11 are relatively moved in the X-axis direction by two pixels. Here, the inkjet head 30 is stepped by two pixels in the + X direction with respect to the substrate. Then, the inkjet head 30 performs the fifth scan. Thereby, as shown in FIG. 8A, the droplet “5” for forming the second side pattern W3 is arranged on the substrate so as to be adjacent to the + X side of the central pattern W1. Again, the droplet “5” is arranged with one pixel in the Y-axis direction. Here, the droplet “5” at the time of the fifth scan after the step movement of the inkjet head 30 in the X-axis direction is arranged at a position adjacent to the droplet “1” with respect to the X-axis.

  FIG. 8B is a schematic diagram when droplets are ejected from the inkjet head 30 to the substrate 11 by the sixth scan. In FIG. 8B, “6” is given to the droplets ejected during the sixth scan. During the sixth scan, droplets are ejected so as to interpolate between the droplets “5” ejected during the fifth scan. Then, the droplets are continuous in the fifth and sixth scans and discharge operations, and the second side pattern W3 is formed. Here, the droplet “6” at the time of the sixth scanning is arranged at a position adjacent to the droplet “2” with respect to the X axis.

  FIG. 9 is a diagram showing an example in which the arrangement order of droplet discharge positions is changed. In FIG. 7, the position adjacent to the −X side of the droplet “1” forming the central pattern W <b> 1 is adjacent to the −X side during the second scanning after the step movement of the inkjet head 30 in the X axis direction (as a whole). The droplet “4” ejected at the time of the fourth scanning) is disposed, and on the other hand, at the position adjacent to the −X side with respect to the X axis of the droplet “2” forming the central pattern W1, the inkjet head 30 After the step movement in the X-axis direction, the droplet “3” ejected during the first scanning (when the third scanning as a whole) is arranged. Similarly, at the position adjacent to the + X side with respect to the X axis of the droplet “1”, the droplet “6” discharged during the sixth scan as a whole is arranged, while the liquid forming the central pattern W1 At a position adjacent to the + X side of the droplet “2”, the droplet “5” ejected in the fifth scan as a whole is arranged. Thus, when forming each line W1, W2, W3, you may set so that each of the order of the discharge position of a droplet may differ for every line.

  Further, as shown in the example shown in FIG. 10, after the droplet “1” for forming the central pattern W1 is arranged, the inkjet head 30 is moved stepwise to form the droplet for forming the first side pattern W2. The order of arranging “2” and then arranging the droplet “3” for stepwise moving the inkjet head 30 to form the second side pattern W2 is also possible. Then, droplets “4”, “5”, and “6” are sequentially ejected so as to interpolate these. As described above, when the side patterns W2 and W3 are formed after the central pattern W1 is formed, the central pattern W1 is not formed without forming the side patterns W2 and W3 after the central pattern W1 is completely formed. The forming operation of the side patterns W2 and W3 may be started in a completed state.

  FIGS. 11A and 11B show examples of the arrangement of droplets for forming the first and second side patterns W2 and W3 on both sides of the central pattern W1 in the second and third steps. FIG. In the example of FIG. 11A, the central pattern W1 is formed under the same conditions as the ejection conditions (arrangement conditions) described with reference to FIG. On the other hand, the discharge conditions (arrangement conditions) in the second and third steps are different from the discharge conditions for forming the central pattern W1. Specifically, the volume of the droplet Ln is set larger than that in the first step. That is, the amount of liquid material discharged at a time is increased. In this example, the arrangement pitch of the droplets Ln is the same as that in the first step. By increasing the volume of the droplet Ln, the formation time of the entire film pattern W can be shortened, and the throughput can be improved. In addition, since the bulge is likely to be generated when the volume of the droplet is increased, a droplet volume condition in which no bulge is generated according to the material characteristics of the liquid material is obtained in advance, and based on the obtained condition, What is necessary is just to set the maximum possible volume.

  In the example of FIG. 11B, the discharge conditions of the second and third steps make the arrangement pitch of the droplets Ln narrower than that of the first step. The volume of the droplet Ln may be the same as that in the first step, and may be larger than that in the first step as shown in FIG. By narrowing the arrangement pitch of the liquid droplets, the amount of liquid droplets arranged per unit area increases, and a pattern can be formed in a short time.

[Third Embodiment]
As a third embodiment, a silicon film pattern forming method which is an example of the film pattern forming method of the present invention will be described. The silicon film pattern forming method according to this embodiment includes a surface treatment process, a discharge process, and a heat treatment / light treatment process.
Hereinafter, each step will be described.

(Surface treatment process)
As the substrate on which the silicon thin film pattern is to be formed, various substrates such as a Si wafer, quartz glass, glass, a plastic film, and a metal plate can be used. Further, a substrate in which a silicon thin film pattern is to be formed may be formed by forming a semiconductor film, a metal film, a dielectric film, an organic film or the like on the surface of these various material substrates as a base layer.

The surface of the substrate on which the silicon thin film pattern is to be formed preferably controls liquid repellency (wetting) with respect to the liquid containing conductive fine particles. Specifically, the contact angle of the liquid with respect to the substrate surface is controlled. It is desirable that the angle is 15 ° or more and 45 ° or less. Further, in order to determine a desired contact angle set value within the above contact angle range, first, the type of substrate on which the conductive film wiring is to be formed and the type of droplet to be adopted are determined, and this condition is determined. The relationship of the contact angle with respect to the droplet diameter after landing on the substrate is obtained in advance, and the desired contact angle is determined based on the droplet diameter.
Thus, since the surface treatment method for obtaining a desired contact angle is the same as that of the first embodiment, the description thereof is omitted.

(Discharge process)
When forming a silicon thin film pattern, the liquid discharged in the discharge process is a liquid containing an organosilicon compound. As the liquid containing the organosilicon compound, a solution in which the organosilicon compound is dissolved in a solvent is used. The organosilicon compound used here has a general formula SinXm (where X represents a hydrogen atom and / or a halogen atom, n represents an integer of 3 or more, and m represents an integer of n, 2n-2, 2n, or 2n + 2). A silane compound having a ring system represented by:
Here, n is 3 or more. From the viewpoint of thermodynamic stability, solubility, ease of purification, etc., n is preferably about 5 to 20, particularly 5 or 6 cyclic silane compounds. When the ratio is less than 5, the silane compound itself becomes unstable due to distortion caused by the ring, which causes a difficulty in handling. On the other hand, when n is larger than 20, a decrease in solubility due to the cohesive force of the silane compound is recognized, and the selection of the solvent to be used is narrowed.
X in the general formula SinXm of the silane compound used in the present invention is a hydrogen atom and / or a halogen atom. Since these silane compounds are precursor compounds to the silicon film, it is necessary to finally form amorphous or polycrystalline silicon by heat treatment and / or light treatment, and the silicon-hydrogen bond and silicon-halogen bond are Cleavage is caused by the above treatment, and a new silicon-silicon bond is formed, and finally converted to silicon. The halogen atom is usually a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and chlorine and bromine are preferred from the viewpoint of bond cleavage. X may be a hydrogen atom alone or a halogen atom alone, or a partially halogenated silane compound in which the sum of hydrogen atoms and halogen atoms is m.

Further, as these silane compounds, compounds modified with a Group 3 or Group 5 element such as boron or phosphorus can be used as necessary. As a specific example of the modified silane compound, a compound containing no carbon atom is preferable. The general formula SiaXbYc (wherein X represents a hydrogen atom and / or a halogen atom, Y represents a boron atom or a phosphorus atom, and a represents 3 The above-mentioned integer is represented, b represents an integer greater than or equal to 2a + c + 2, and c represents an integer greater than or equal to 1 and less than or equal to a). Here, in terms of thermodynamic stability, solubility, ease of purification, etc., a modified silane compound in which the sum of a and c is about 5 to 20, particularly 5 or 6, is preferred. When a + c is smaller than 5, the modified silane compound itself becomes unstable due to distortion caused by the ring, which causes a difficulty in handling. On the other hand, when a + c is larger than 20, a decrease in solubility due to the cohesive force of the modified silane compound is recognized, and the selection of the solvent to be used is narrowed.
X in the general formula SiaXbYc of the modified silane compound is a hydrogen atom and / or a halogen atom in the same manner as X in the general formula of the unmodified silane compound represented by SinXm, and is usually a fluorine atom, A chlorine atom, a bromine atom, and an iodine atom, and chlorine and bromine are preferable in terms of the bond cleavage. X may be a hydrogen atom alone or a halogen atom alone, or a partially halogenated silane compound in which the sum of hydrogen atoms and halogen atoms is b.

As the liquid solvent containing the organosilicon compound, those having a vapor pressure at room temperature of 0.001 mmHg or more and 200 mmHg or less (about 0.133 Pa or more and 26600 Pa or less) are preferable. This is because when the vapor pressure is higher than 200 mmHg, the solvent rapidly evaporates after ejection, making it difficult to form a good film.
The vapor pressure of the solvent is more preferably 0.001 mmHg or more and 50 mmHg or less (about 0.133 Pa or more and 6650 Pa or less). When the vapor pressure is higher than 50 mmHg, nozzle clogging due to drying is likely to occur when droplets are ejected by the ink jet method, and stable ejection becomes difficult.
On the other hand, in the case of a solvent having a vapor pressure lower than 0.001 mmHg at room temperature, drying is slow and the solvent tends to remain in the film, and it is difficult to obtain a high-quality conductive film after heat and / or light treatment in a subsequent process.

The solvent to be used is not particularly limited as long as it can dissolve the above organosilicon compound, but n-heptane, n-octane, decane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro. In addition to hydrocarbon solvents such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis Ether solvents such as (2-methoxyethyl) ether, p-dioxane, propylene carbonate, γ-butyrolactone, N-methyl- - it can be exemplified pyrrolidone, dimethylformamide, dimethyl sulfoxide, a polar solvent such as cyclohexanone.
Of these, hydrocarbon solvents and ether solvents are preferred in view of the solubility of the organosilicon compound and the stability of the solution, and more preferred solvents include hydrocarbon solvents. These solvents can be used singly or as a mixture of two or more.

  The solute concentration in the case of dissolving the organosilicon compound in a solvent is 1% by mass or more and 80% by mass or less, and can be adjusted according to a desired silicon film thickness. If it exceeds 80% by mass, aggregation tends to occur, and a uniform film is difficult to obtain.

  The surface tension of the organosilicon compound solution is preferably in the range of 0.02 N / m to 0.07 N / m. When the liquid is ejected by the ink jet method, if the surface tension is less than 0.02 N / m, the wettability of the ink composition with respect to the nozzle surface increases, and thus flight bending easily occurs, and exceeds 0.07 N / m. This is because the shape of the meniscus at the nozzle tip is not stable, and it becomes difficult to control the discharge amount and the discharge timing.

In order to adjust the surface tension, a trace amount of a surface tension adjusting agent such as a fluorine-based, silicon-based, or nonionic-based one can be added to the above solution within a range that does not unduly decrease the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the liquid to the substrate, improves the leveling property of the film, and helps to prevent the occurrence of crushing of the coating film and the generation of the itchy skin.
The solution may contain an organic compound such as alcohol, ether or ketone, if necessary.

  The viscosity of the solution is preferably 1 mPa · s or more and 50 mPa · s or less. When ejected by the ink jet method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of ink, and if the viscosity is greater than 50 mPa · s, the nozzle hole is clogged frequently. This is because it becomes difficult to smoothly discharge droplets.

  In this embodiment, droplets of the solution are ejected from an inkjet head and dropped onto a place where a wiring on the substrate is to be formed. At this time, it is necessary to control the overlapping degree of the droplets to be discharged continuously so that no liquid pool is generated. Further, it is also possible to employ a discharge method in which a plurality of droplets are discharged so as not to contact each other in the first discharge, and the space is filled by the second and subsequent discharges.

  After discharging the droplets, a drying process is performed as necessary to remove the solvent. The drying process can be performed, for example, by lamp annealing in addition to a process using a normal hot plate or an electric furnace for heating the substrate. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used as a light source. These light sources generally have a power output in the range of 10 W or more and 5000 W or less, but in this embodiment, a range of 100 W or more and 1000 W or less is sufficient.

(Heat treatment / light treatment process)
The solution after the discharging process needs to remove the solvent and convert the organosilicon compound into amorphous or polycrystalline silicon. For this reason, the substrate after the discharge process is subjected to heat treatment and / or light treatment.

The heat treatment and / or light treatment may be performed in an inert gas atmosphere such as nitrogen, argon, or helium. The treatment temperature of heat treatment and / or light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as fine particle dispersibility and oxidation, the presence and amount of coating material, It is determined appropriately in consideration of the heat resistant temperature.
Usually, it is treated at about 100 to 800 ° C., preferably about 200 to 600 ° C., more preferably about 300 to 500 ° C. in an argon atmosphere or argon containing hydrogen, and generally the ultimate temperature is about 550 ° C. or less. At this temperature, an amorphous film can be obtained, and at a temperature higher than that, a polycrystalline silicon film can be obtained. When the ultimate temperature is less than 300 ° C., the pyrolysis of the organosilicon compound does not proceed sufficiently, and a silicon film having a sufficient thickness may not be formed. When it is desired to obtain a polycrystalline silicon film, the amorphous silicon film obtained above can be converted into a polycrystalline silicon film by laser annealing. The atmosphere in which the laser annealing is performed is also preferably an inert gas such as helium or argon, or a mixture of them with a reducing gas such as hydrogen.

The heat treatment and / or light treatment can be performed by lamp annealing in addition to treatment by a normal hot plate, electric furnace or the like. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used as a light source. These light sources generally have a power output in the range of 10 W or more and 5000 W or less, but in this embodiment, a range of 100 W or more and 1000 W or less is sufficient.
Through the above steps, the solution after the discharging step is converted into an amorphous or polycrystalline silicon film.
As described above, the silicon film pattern formed according to the present embodiment can be favorably formed with a desired pattern without causing defects such as disconnection.

[Fourth Embodiment]
As a fourth embodiment, a liquid crystal device which is an example of an electro-optical device of the invention will be described.
FIG. 12 shows a planar layout of signal electrodes and the like on the first substrate of the liquid crystal device according to this embodiment. The liquid crystal device according to this embodiment includes the first substrate, a second substrate (not shown) provided with a scanning electrode, and a liquid crystal (not shown) sealed between the first substrate and the second substrate. It is roughly composed of

  As shown in FIG. 12, a plurality of signal electrodes 310 are provided in a multiple matrix form in the pixel region 303 on the first substrate 300. In particular, each signal electrode 310 is composed of a plurality of pixel electrode portions 310a provided corresponding to each pixel and signal wiring portions 310b that connect them in a multiplex matrix, and extends in the Y direction. ing.

  Reference numeral 350 denotes a liquid crystal driving circuit having a one-chip structure, and the liquid crystal driving circuit 350 and one end side (lower side in the figure) of the signal wiring portions 310b... Are connected via first routing wirings 331. Further, reference numeral 340... Is a vertical conduction terminal, and the vertical conduction terminals 340 are connected to terminals provided on a second substrate (not shown) by vertical conduction members 341. Further, the vertical conduction terminals 340... And the liquid crystal driving circuit 350 are connected via the second routing wirings 332.

In the present embodiment, the signal wiring portions 310b..., The first routing wiring 331..., The second routing wiring 332... Provided on the first substrate 300 are each formed using the wiring forming apparatus according to the second embodiment. It is formed by the wiring forming method according to the first embodiment.
According to the liquid crystal device of the present embodiment, it is possible to obtain a liquid crystal device that is less likely to cause defects such as disconnection or short circuit of the above-described wirings and that can be reduced in size and thickness.

  FIG. 13 is a diagram for explaining a liquid crystal display device according to another embodiment. FIG. 13A is an equivalent circuit of various elements such as switching elements and wirings constituting an image display region of the liquid crystal display device. FIG. 13B shows an essential part of the liquid crystal display device, and is an enlarged cross-sectional view for explaining the structure of the switching element and the pixel electrode included in each pixel.

  As shown in FIG. 13A, the liquid crystal display device 100 includes a scanning line 101 and a data line 102 arranged in a matrix, a pixel electrode 130, and a pixel switching TFT for controlling the pixel electrode 130 (hereinafter referred to as a pixel switching TFT). , Referred to as TFT.) 110 is formed. The scanning lines 101 are supplied with scanning signals Q1, Q2,..., Qm in pulses, and the data lines 102 are supplied with image signals P1, P2,. ing. Further, the scanning line 101 and the data line 102 are connected to the TFT 110 as described later, and the TFT 110 is driven by the scanning signals Q1, Q2,..., Qm and the image signals P1, P2,. Yes. Further, a storage capacitor 120 that holds image signals P1, P2,..., Pn of a predetermined level for a certain period is formed, and a capacitor line 103 is connected to the storage capacitor 120.

Next, the structure of the TFT 110 will be described with reference to FIG.
As shown in FIG. 13B, the TFT 110 is a TFT having a so-called bottom gate type (inverted stagger type) structure. As a specific structure, an insulating substrate 100a serving as a base material of the liquid crystal display device 100, a base protective film 100I formed on the surface of the insulating substrate 100a, a gate electrode 110G, a gate insulating film 110I, and a channel region 110C. And an insulating film 112I for protecting the channel are stacked in this order. A source region 110S and a drain region 110D of a high-concentration N type amorphous silicon film are formed on both sides of the insulating film 112I, and a source electrode 111S and a drain electrode 111D are formed on the surface of the source / drain regions 110S and 110D. ing.

Further, an interlayer insulating film 112I and a pixel electrode 130 made of a transparent electrode such as ITO are formed on the surface side thereof, and the pixel electrode 130 is electrically connected to the drain electrode 111D through a contact hole of the interlayer insulating film 130. It is connected.
Here, the gate electrode 110 </ b> G is a part of the scanning line 101, and the source electrode 111 </ b> S is a part of the data line 102. Furthermore, the gate electrode 110G and the scanning line 101 are formed by the wiring forming method according to the first embodiment using the wiring forming apparatus according to the second embodiment described above.

  In such a liquid crystal display device 100, current is supplied from the scanning line 101 to the gate electrode 110G according to the scanning signals Q1, Q2,..., Qm, and an electric field is generated in the vicinity of the gate electrode 110G. Channel region 110C becomes conductive. Further, in the conductive state, a current is supplied from the data line 102 to the source electrode 111S in accordance with the image signals P1, P2,..., Pn, the pixel electrode 130 is conducted, and a voltage is applied between the pixel electrode 130 and the counter electrode. Is done. That is, the liquid crystal display device 100 can be driven as desired by controlling the scanning signals Q1, Q2,..., Qm and the image signals P1, P2,.

In the liquid crystal display device 100 configured as described above, the gate electrode 110G and the scanning line 101 are formed by the wiring forming method according to the first embodiment using the wiring forming device according to the second embodiment described above. Therefore, the wiring pattern is good and highly reliable with no defects such as disconnection. Therefore, a highly reliable liquid crystal display device is obtained. That is, the same effect is achieved as described above.
The wiring pattern forming method of the present embodiment is not limited to the gate electrode 110G and the scanning line 101, and can be applied to other wiring forming methods such as the data line 102.

(Electron emission display)
Next, an electron emission display (Field Emission Display, hereinafter referred to as FED) including an electron emission element, which is an example of the electro-optical device of the present invention, will be described. In addition, the manufacturing method of FED is formed with the wiring formation method which concerns on 1st Embodiment using the wiring formation apparatus which concerns on 2nd Embodiment described previously.

  14A and 14B are diagrams for explaining the FED. FIG. 14A is a schematic configuration diagram showing an arrangement of a cathode substrate and an anode substrate constituting the FED, and FIG. 14B is a cathode substrate of the FED. FIG. 14C is a perspective view showing the main part of the cathode substrate.

  As shown in FIG. 14A, the FED 200 has a configuration in which a cathode substrate 200a and an anode substrate 200b are arranged to face each other. As shown in FIG. 14B, the cathode substrate 200a includes a gate line 201, an emitter line 202, and an electron-emitting device 203 connected to the gate line 201 and the emitter line 202. This is a so-called simple matrix driving circuit. The gate signals 201 are supplied with gate signals S1, S2,..., Sm, and the emitter lines 202 are supplied with emitter signals T1, T2,. The anode substrate 200b includes a phosphor made of RGB, and the phosphor has a property of emitting light when hit by electrons.

  As shown in FIG. 14C, the electron-emitting device 203 has an emitter electrode 203 a connected to the emitter line 202 and a gate electrode 203 b connected to the gate line 201. Further, the emitter electrode 203a includes a protrusion called an emitter tip 205 that decreases in diameter from the emitter electrode 203a side toward the gate electrode 203b. A hole 204 is formed in the gate electrode 203b at a position corresponding to the emitter tip 205. The tip of the emitter tip 205 is disposed in the hole 204.

  In such an FED 200, by controlling the gate signals S1, S2,..., Sm of the gate line 201 and the emitter signals T1, T2,..., Tn of the emitter line 202, the emitter electrode 203a and the gate electrode 203b are controlled. A voltage is supplied between them, and electrons 210 move from the emitter tip 205 toward the hole 204 by the action of electrolysis, and electrons 210 are emitted from the tip of the emitter tip 205. Here, since the light is emitted when the electrons 210 and the phosphor of the anode substrate 200b hit, the FED 200 can be driven as desired.

In the FED configured as described above, the emitter electrode 203a and the emitter line 202 are formed by the wiring forming method according to the first embodiment using the wiring forming apparatus according to the second embodiment described above. Thus, the wiring pattern is good and reliable with no defects such as disconnection. Accordingly, the display device is highly reliable. That is, the same effect is achieved as described above.
The wiring pattern forming method of the present embodiment is not limited to the emitter electrode 203a and the emitter line 202, and can be applied to other wiring forming methods such as the gate electrode 203b and the gate line 201. The present invention has been described with an FED (Field Emission Display) as an electro-optical device, but can also be applied to a surface-conduction electron-emitter display (SED) or the like.

  The device to which the manufacturing method of the present invention is applied can also be applied to other devices having a wiring pattern. For example, the present invention can be applied to the production of a wiring pattern formed in an organic electroluminescence device, the production of a wiring pattern formed in an electrophoresis device, and the like.

[Fifth Embodiment]
As a fifth embodiment, a plasma display device which is an example of the electro-optical device of the invention will be described.
FIG. 15 is an exploded perspective view of the plasma display device 500 of this embodiment.
The plasma display apparatus 500 is generally configured by a glass substrate 501 and a glass substrate 502 that are arranged to face each other, and a discharge display portion 510 that is formed therebetween.

  The discharge display unit 510 includes a plurality of discharge chambers 516, and among the plurality of discharge chambers 516, three of the red discharge chamber 516 (R), the green discharge chamber 516 (G), and the blue discharge chamber 516 (B). Two discharge chambers 516 are arranged in pairs to constitute one pixel. Address electrodes 511 are formed in stripes at predetermined intervals on the upper surface of the (glass) substrate 501, a dielectric layer 519 is formed so as to cover the address electrodes 511 and the upper surface of the substrate 501, and further a dielectric layer A partition wall 515 is formed on the 519 between the address electrodes 511 and 511 and along the address electrodes 511.

The partition wall 515 is also partitioned at a predetermined interval in a direction perpendicular to the address electrode 511 at a predetermined position in the longitudinal direction (not shown), and is basically adjacent to the left and right sides of the address electrode 511 in the width direction. A rectangular region partitioned by the barrier ribs and the barrier ribs extending in a direction orthogonal to the address electrodes 511 is formed, and discharge chambers 516 are formed so as to correspond to the rectangular regions. One pixel is composed of three pairs.
In addition, a phosphor 517 is disposed inside a rectangular region partitioned by the partition 515. The phosphor 517 emits red, green, or blue fluorescence. The red phosphor 517 (R) is located at the bottom of the red discharge chamber 516 (R), and the bottom of the green discharge chamber 516 (G). Are arranged with a green phosphor 517 (G) and a blue phosphor 517 (B) at the bottom of the blue discharge chamber 516 (B).

  Next, on the glass substrate 502 side, transparent display electrodes 512 made of a plurality of ITO are formed in stripes at a predetermined interval in a direction orthogonal to the previous address electrode 511, and in order to compensate for the high resistance ITO. In addition, a bus electrode 512a made of metal is formed. Further, a dielectric layer 513 is formed so as to cover them, and a protective film 514 made of MgO or the like is further formed. Further, two substrates of the substrate 501 and the glass substrate 502 are bonded to each other so that the address electrodes 511 and the transparent display electrodes 512 are opposed to each other so as to be orthogonal to each other, and the substrate 501, the partition wall 515, and the glass substrate 502 side are bonded. A discharge chamber 516 is formed by evacuating a space portion surrounded by the protective film 514 formed on and enclosing a rare gas. Note that two transparent display electrodes 512 formed on the glass substrate 502 side are formed so as to be arranged two by two for each discharge chamber 516. The address electrode 511 and the transparent display electrode 512 are connected to an AC power supply (not shown), and the phosphor 517 is excited and emitted in the discharge display portion 510 at a necessary position by energizing each electrode so that color display can be performed. It has become.

In the present embodiment, the address electrode 511, the transparent display electrode 512, and the bus electrode 512a are each formed by the wiring forming method according to the first embodiment using the wiring forming apparatus according to the second embodiment.
According to the liquid crystal device of the present embodiment, it is possible to obtain a plasma display device that is unlikely to cause defects such as disconnection or short circuit of the electrodes and that can be reduced in size and thickness.

[Sixth Embodiment]
As a sixth embodiment, a specific example of an electronic device of the present invention will be described.
FIG. 16A is a perspective view showing an example of a mobile phone. In FIG. 16A, reference numeral 600 denotes a mobile phone body, and reference numeral 601 denotes a liquid crystal display unit provided with the liquid crystal device of the fourth embodiment.
FIG. 16B is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 16B, reference numeral 700 denotes an information processing device, 701 denotes an input unit such as a keyboard, 703 denotes an information processing body, and 702 denotes a liquid crystal display unit including the liquid crystal device of the fourth embodiment.
FIG. 16C is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 16C, reference numeral 800 denotes a watch body, and reference numeral 801 denotes a liquid crystal display unit including the liquid crystal device of the fourth embodiment.

Since the electronic devices shown in FIGS. 16A to 16C include the liquid crystal device of the above-described embodiment, defects such as disconnection and short circuit of wirings are hardly generated, and further, downsizing and thinning are possible. Become.
In addition, although the electronic device of this embodiment shall be provided with a liquid crystal device, it can also be set as the electronic device provided with other electro-optical devices, such as an organic electroluminescent display apparatus and a plasma type display apparatus.

[Seventh Embodiment]
As a seventh embodiment, an embodiment of a contactless card medium of the present invention will be described.
As shown in FIG. 17, a non-contact type card medium 400 includes a semiconductor integrated circuit chip 408 and an antenna circuit 412 in a housing made up of a card base 402 and a card cover 418, and an external transmitter / receiver (not shown) and electromagnetic waves. Alternatively, at least one of power supply and data exchange is performed by at least one of capacitive coupling.

In the present embodiment, the antenna circuit 412 is formed by the wiring forming method according to the first embodiment using the wiring forming apparatus according to the second embodiment.
According to the contactless card medium of the present embodiment, the antenna circuit 412 is less likely to be broken or short-circuited, and the contactless card medium can be reduced in size and thickness.

After pre-treating the glass substrate surface, a lyophobic treatment was performed, followed by a lyophilic treatment.
The pretreatment is irradiation of ultraviolet light onto the substrate surface and cleaning with a solvent.
The liquid repellency treatment was performed by forming a monomolecular film of FAS. Specifically, heptadecafluoro-1,1,2,2tetrahydrodecyltriethoxysilane is used as a compound that forms a self-assembled film, and this compound and the substrate are placed in the same sealed container, The temperature of 120 ° C. was maintained and left for 2 hours.
In the lyophilic treatment, ultraviolet light having a wavelength of 254 nm was irradiated. This irradiation with ultraviolet light was performed by changing the irradiation time in various ways.
As described above, the liquid repellency of the substrates having different ultraviolet light irradiation times was examined as a contact angle with respect to toluene as a main solvent. The results are shown in Table 1.

[Table 1]
Irradiation time (seconds) Contact angle [deg]
0 80
15 60
60 45
80 30
90 20

Next, xylene is added to a gold fine particle dispersion (trade name “Perfect Gold” manufactured by Vacuum Metallurgical Co., Ltd.) in which gold fine particles having a particle diameter of 10 nm are dispersed in toluene, the solute concentration is 60 mass%, the viscosity is 18 cp, the surface A liquid having a tension of 35 N / m was prepared and discharged at a predetermined pitch while sandwiching the drying process with an ink jet apparatus capable of mounting a plurality of ink jet heads, thereby forming conductive film wiring.
A commercially available printer (trade name “PM900C”) head was used as the inkjet head. However, since the liquid (ink) suction portion is made of plastic, the suction portion is changed to a metal jig so as not to dissolve in the organic solvent. The relative movement speed between the substrate and the inkjet head was fixed, and the pitch was changed by adjusting only the ejection frequency.
The substrate used was a polyimide film that has been subjected to tetrafluoroethylene processing and attached to a glass substrate.
Ejection was performed using only one nozzle and with a head drive waveform and a head drive voltage at which the volume of ejected droplets was 20 pl. The droplet diameter after landing on the substrate when discharged under these conditions is about 70 μm.

FIG. 18 shows a table of contact angles with respect to droplet diameter after landing, which was obtained in advance using the gold fine particle dispersion.
In this case, if the contact angle is larger than 45 ° or smaller than 15 °, the formed gold line is broken as shown in FIG. On the other hand, as shown in FIG. 18, when the droplet diameter range is 50 to 100 μm, that is, the contact angle range corresponding to the droplet diameter range is 15 ° to 45 °, As shown in 19 (b), a good gold line without disconnection is generated. Based on this result, since the desired droplet diameter after landing on the substrate is about 70 μm, the corresponding contact angle is 35 °.
Accordingly, since the desired contact angle is 35 °, referring to Table 1, the irradiation time of the ultraviolet light was set to 80 seconds.

  Droplets were discharged onto the substrate by the discharge process shown in the first embodiment, and then a drying process was performed at 100 ° C. for 5 minutes using a dryer. Further, the substrate on which the wiring was formed was subjected to a heat treatment at 300 ° C. for 30 minutes using a hot plate to obtain a desired gold line.

It is a perspective view of a wiring formation apparatus. It is a figure for demonstrating schematic structure of a droplet discharge head. It is a bottom view of a droplet discharge head. It is a schematic diagram which shows one Embodiment of the formation method of a pattern. It is a schematic diagram which shows one Embodiment of the formation method of a pattern. It is a figure which shows a mode that a droplet is arrange | positioned on a board | substrate. It is a figure which shows a mode that a droplet is arrange | positioned on a board | substrate. It is a figure which shows a mode that a droplet is arrange | positioned on a board | substrate. It is a figure which shows a mode that a droplet is arrange | positioned on a board | substrate. It is a figure which shows a mode that a droplet is arrange | positioned on a board | substrate. It is a schematic diagram which shows other embodiment of the formation method of a pattern. It is a figure which shows a part of liquid crystal device. It is a figure which shows another liquid crystal display device. It is a figure which shows an electron emission apparatus. It is a disassembled perspective view of a plasma type display apparatus. It is a figure which shows an example of an electronic device. It is a disassembled perspective view of a non-contact type card medium. FIG. 6 is a relationship diagram of a contact angle with respect to a droplet diameter after landing on a substrate. It is the schematic of the formed electrically conductive film wiring.

Explanation of symbols

11, 100a, 300 substrate, 42, L1, L2 droplet, D diameter, 20 wiring forming device (thin film manufacturing device), 100 liquid crystal display device, 200 electron emission display (FED), 500 plasma display device, 400 non-contact Type card medium, 412 antenna circuit, 600 mobile phone, 700 information processing device, 800 watch

Claims (11)

A film pattern forming method for forming a film pattern by discharging liquid droplets containing conductive fine particles to a predetermined film forming region on a substrate,
A liquid repellent treatment step of performing a liquid repellent treatment by performing a plasma treatment on the surface of the substrate before discharging the droplets;
A lyophilic process step of performing a lyophilic process on a predetermined region on the substrate by performing a plasma process using oxygen as a reaction gas;
A contact angle with respect to the liquid on the substrate is set by the lyophobic treatment step and the lyophilic treatment step.   The method of forming a film pattern according to claim 1, wherein the contact angle is set based on a diameter of the droplet after being ejected onto the substrate.   2. The film pattern forming method according to claim 1, wherein the lyophilic process is performed after the lyophobic process.   The method for forming a film pattern according to claim 1, wherein the contact angle is 15 ° or more and 45 ° or less.   2. The film pattern forming method according to claim 1, further comprising a step of converting the liquid discharged on the substrate into a conductive film by heat treatment or light treatment.   A conductive film wiring formed by the film pattern forming method according to claim 1.   An electro-optical device comprising the conductive film wiring according to claim 6.   An electronic apparatus comprising the electro-optical device according to claim 7.   A non-contact card medium comprising the conductive film wiring according to claim 6 as an antenna circuit.   A thin film transistor formed by the film pattern forming method according to claim 1. An electro-optical device comprising the thin film transistor according to claim 10.

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