JP2005051161A - High-frequency circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize miniaturization and precision improvement by using a coplanar line for a high-frequency circuit device. <P>SOLUTION: A package 18 has a built-in transistor, a diode and an IC while having exposed input lead-out electrode 19A, an output lead-out electrode 19B, and grounding lead-out electrodes 21. Two center conductors 11A and 11B are formed to an insulating module substrate, and have leaders connected to the input lead-out electrode and the output lead-out electrode for the package respectively and intermediate sections whose widths are broadened. Grounding conductors 12A are formed while surrounding the two center conductors so as to have gaps, and connected to rear-side grounding conductors on the rear of the module substrate through viaholes. The grounding conductors are formed to surround the center conductors and the gaps. The two center conductors, the viaholes and the grounding conductors are formed symmetrically on the outside the package. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a high-frequency circuit device that is miniaturized by using a lead electrode pattern of a module substrate as a coplanar line.

  Along with the increase in frequency and miniaturization of the operating frequency of communication equipment and the like, a microstrip line is used for the extraction electrode of the module substrate.

  FIG. 14 shows a microstrip line 1 conventionally used in a high-frequency circuit. A conductive pattern 3 serving as an extraction electrode is formed of platinum or the like on the surface of a module substrate 2 made of ceramic or the like.

  FIG. 15 is a plan view of a conventional high-frequency circuit device using the microstrip line 1 shown in FIG. 14 as an extraction electrode of a module substrate.

  The package 4 includes a transistor, a diode, an IC, and the like, and the input extraction electrode 5a, the output extraction electrode 5b, and the ground electrode 5c are exposed from the lower surface.

  The input extraction electrode 5a of the package 4 is extracted by the microstrip line 6a, and the output extraction electrode 5b is extracted by the microstrip line 6b. Further, the ground electrodes 5c and 5c are drawn out by the microstrip line 6c.

Since the input extraction electrode 5a and the output extraction electrode 5b are required to have predetermined impedance, the thickness H _mic of the module substrate 2 is 800 μm, and the line width W _mic of the conductor 3 is 800 μm. 6a and 6b are relatively thick conductors.

A method is also conceivable in which the module substrate 2 is thinned to make the microstrip lines 6a, 6b, 6c, etc., which serve as the extraction electrodes of the input / output extraction electrodes thin. Thereby, high integration is also possible. In this case, it is not necessary to make the entire module substrate 2 thin, it is also possible to use a thin module substrate only where a thin microstrip conductor is required, and otherwise use a module substrate 2 having a normal thickness.
JP 2000-68715 A

  As shown in FIG. 15 described above, if the lead electrode pattern is formed by the thick microstrip line 1, wiring is difficult and integration of the module substrate 2 is also difficult.

  Further, when the module substrate 2 is thinned and the drawing pattern is thinned, the mechanical strength is lowered, and the transmission loss and dielectric loss of the entire high-frequency circuit are increased. Thinning the module substrate 2 only at the places where the thin microstrip wiring is used means that the module substrates having different thicknesses are handled, and there are various problems such as cost and production time due to the connection between the module substrate 2 and the module substrate 2. appear.

The present invention achieves miniaturization and high precision by using a coplanar line,
Transistors, diodes, ICs, etc. are built-in and have a package having exposed input extraction electrodes, output extraction electrodes and ground extraction electrodes, and are formed on an insulating module substrate and connected to the input extraction electrodes and output extraction electrodes of the package, respectively. A ground conductor having a gap between the center conductor and a ground conductor connected to a back-surface ground conductor on the back surface of the module substrate. The conductor provides a high-frequency circuit device formed so as to surround the gap with the central conductor.

  The present invention also includes a transistor, a diode, an IC, etc., a package having an input extraction electrode, an output extraction electrode, and a ground extraction electrode provided on a diagonal line and exposed, and an insulating module substrate at the center of the package. A module formed symmetrically around the center conductor having a gap between the start end portion and the widened intermediate portion connected to the input extraction electrode and the output extraction electrode of the package, and a module. Provided is a high-frequency circuit device comprising a grounding conductor connected to a backside grounding conductor on the backside of the substrate, wherein the grounding conductor is formed so as to surround the center conductor and the gap.

  Further, the present invention includes a transistor, a diode, an IC, and the like, and a package having an input extraction electrode, an output extraction electrode, and a ground extraction electrode provided in the same row, and an insulating module substrate that is symmetrical with respect to the center line of the package. A central conductor having a start end portion and a widened intermediate portion connected to the input extraction electrode and the output extraction electrode of the package, respectively, and surrounding the central conductor so as to have a gap, and on the back surface of the module substrate There is provided a high frequency circuit device comprising a grounding conductor connected to a backside grounding conductor, wherein the grounding conductor is formed so as to surround the gap with the central conductor.

  The high frequency circuit device of the present invention is provided with a ground conductor connected to the back surface ground conductor so as to surround the center conductor serving as the input lead electrode and the output lead electrode, and adjusting the gap between the center conductor and the ground conductor to The required input / output impedance can be obtained even if the width is not wide.

  Therefore, while maintaining the mechanical strength, it is possible to realize a high density and high integration of the module substrate portion, a reduction in the loss of the entire high frequency circuit, a low cost, and a shortening of the production time. Further, by arranging the input / output lead electrode patterns symmetrically, the input / output signals can be easily considered.

  The high-frequency circuit device of the present invention will be described with reference to FIGS.

FIG. 1 is a perspective view of a coplanar line 9 used in the high-frequency circuit device of the present invention. The coplanar line 9 is provided with a central conductor 11 and a gap G _cop1 on a module substrate 10 and ground conductors 12 are formed on both sides. Further, the ground conductor 12 is connected to the back surface ground conductor 16 through a through hole 15 made of tungsten or the like.

  The center conductor 11 described above serves as an external input lead electrode and an external output lead electrode, and the ground conductor 12 serves as an external ground lead electrode. The module substrate 10 is made of ceramic or the like, and the center conductor 11 and the ground conductor 12 are formed on the surface of the module substrate 10 by evaporating platinum or the like.

FIG. 2 is a table showing calculation results by the simulator. FIG. 2A shows the relationship between the thickness H _mic of the module substrate 2 and the width W _mic and length L _mic of the conductive pattern 3 when the characteristic impedance Z ₀ of the 50 Ω microstrip line 1 is obtained. .

As can be seen from FIG. 14, the width W _{mic of the} conductor 3 increases and decreases as the thickness H _mic of the module substrate 2 increases and decreases. As can be seen, the width W _mic can be narrowed as the thickness H _mic of the module substrate 2 is reduced, but the strength becomes a problem. Therefore, the module substrate 2 cannot be reduced to a certain extent. For this reason, the width W _{mic of the} conductor 3 is increased, which hinders downsizing of the high-frequency circuit device.

On the other hand, the coplanar line 9 is substantially determined by the gap G _cop1 between the center conductor 11 and the ground conductor 12 to be grounded.

In FIG. 2B, in order to obtain the characteristic impedance Z ₀ of the 50Ω coplanar line 9, the gap G _cop1 between the center conductor 11 and the grounded conductor 12 is fixed to 250 μm, and the substrate thickness H _cop is changed. In this case, it can be seen that the width W _{cop of the} central conductor does not change so much as the thickness H _cop of the module substrate increases or decreases.

In FIG. 2C, in order to obtain the characteristic impedance Z ₀ of the 50Ω coplanar line 9, the thickness H _cop of the module substrate is fixed to 635 μm, and the gap G _cop1 between the center conductor 11 and the grounded conductor 12 is grounded. In this case, when the gap G _{cop1 is set} to 150 μm, the width of the central conductor 11 becomes 345 μm, and the high-frequency circuit device can be miniaturized.

  3 and 4 are a plan view and a cross-sectional view of the high-frequency circuit device of the present invention using the coplanar line 9 described above. The module substrate 10 has a center conductor 11A made of platinum or the like and a ground conductor 12A, and the ground conductor 12A is provided so as to surround the center conductor 11A. The package 18 has an input extraction electrode 19A, an output extraction electrode 19B, and a ground extraction electrode 21. The center conductor 11A has an elongated starting end portion 11A1 connected to the input extraction electrode 19A of the package 18, a wide intermediate portion 11A3 connected to the inclined side 11A2, and an external extraction electrode portion 11A4 connected to the intermediate portion 11A3.

The ground conductor 12A includes a start end portion 12A1 connected to the ground extraction electrode 21 of the package 18, an inclined side 12A2, and an end portion 12A3. The inclined sides 11A2 and the intermediate portion 11A3 are provided adjacent to each other with gaps G _cop1 and G _cop2 . The ground conductor 12A is connected to the back ground conductor 16 through a through hole 23 made of tungsten or the like.

FIG. 5 is an equivalent circuit of the package 18 used in the high-frequency circuit device of the present invention, L _Wb , L _Wc , and L _We are parasitic inductances of the bonding wires, and L _Lb , L _Lc , and L _Le are bonding pads. And the parasitic inductance of the conductor wiring composed of the through hole and the external lead electrode.

C _Pbc , C _Pbe , and C _Pce are parasitic capacitances between the electrode conductors of the package portion composed of bonding pads, and C _Sbc , C _Sbe , and C _Sce are parasitic capacitances between the external lead electrode conductors.

  An emitter extraction electrode 27, a collector extraction electrode 28, and a base extraction electrode 29 are formed on the package 18 so as to be exposed outside the lower surface. In the embodiment of the present invention, the emitter is the ground extraction electrode, the collector is the output extraction electrode, and the base is the input extraction electrode. However, the collector or the base can be applied as the ground extraction electrode. The transistor chip used in the high-frequency circuit device of the present invention is a bipolar transistor, but it can also be applied to a field effect transistor.

  6 and 7 are a plan view and a cross-sectional view of the portion X in FIG. It shows that the terminal portion of the center conductor 11A is formed as an external lead electrode portion 11A4. The thickness of the module substrate is 635 μm, the long side of the external extraction electrode portion 11A4 is 620 μm, and the short side is 182 μm.

8 and 9 are a plan view and a cross-sectional view of a Y portion in FIG. It shows that the intermediate portion 11A3 of the center conductor 11A and the end portion 12A3 of the ground conductor 12A are provided adjacent to each other. The long side of the intermediate part 11A3 is 620 μm and the length is 216 μm. The width of the gap G _cop1 between the intermediate portion 11A3 of the center conductor 11A and the end portion 12A3 of the ground conductor 12A is 240 μm.

10 and 11 are a plan view and a cross-sectional view of a Z portion in FIG. Here again, it is shown that the start end 12A1 of the ground conductor 12A is provided adjacent to the start end 11A1 of the center conductor 11A. The width of the start end portion 11A1 is 150 μm and the length is 210 μm. The width of the gap G _cop2 between the _{starting end} portion 11A1 of the central conductor 11A and the _{starting end} portion 12A1 of the ground conductor 12A is 70 μm.

  Thus, the high-frequency circuit device of the present invention provides the ground conductor 12A so as to surround the center conductor 11A, forms a gap between the center conductor 11A and the ground conductor 12A, and changes the gap width to obtain the input / output impedance. As a result, the width of the central conductor 11A can be reduced, and the module substrate portion can be dense and highly integrated.

  FIG. 12 is a plan view showing an embodiment of the high-frequency circuit device of the present invention. On the module substrate 10, a first center conductor 11 </ b> A and a second center conductor 11 </ b> B are formed at positions where the center point of the package 18 is point-symmetric. The ground conductor 12 </ b> A is connected to the back surface ground conductor 16 through four through holes 23 with the center point of the package 18 being symmetrical.

A ground conductor 12A is provided so as to surround the first center conductor 11A and the second center conductor 11B, and a gap G _cop1 is formed between the first center conductor 11A and the second center conductor 11B and the ground conductor 12A. As a result, 50Ω required for the input / output impedance of the high-frequency circuit can be obtained without increasing the conductive width of the first center conductor 11A and the second center conductor 11B.

  The start end 11A1 of the first center conductor 11A is connected to the input lead electrode 19A of the package 18, and the start end 11B1 of the second center conductor 11B is connected to the output lead electrode 19B of the package 18. As an example, the start end 11A1 of the first center conductor 11A is connected to the base electrode 29 of the package 18 shown in FIG. 5, and the start end 11B1 of the second center conductor 11B is connected to the collector lead electrode 28. Further, the start end portion 12A1 of the ground conductor 12A is connected to the emitter lead electrode 27 of the package 18.

  By measuring the input / output signal of either one of the central conductors using this input / output lead electrode pattern, the other characteristic can be known.

  FIG. 13 is a plan view showing another embodiment of the high-frequency circuit device of the present invention. On the module substrate 10, a first center conductor 11 </ b> A and a second center conductor 11 </ b> B are formed at positions where the center line of the package 18 is axisymmetric. The ground conductor 12 </ b> A is connected to the back surface ground conductor 16 through three through holes 23 with the center line of the package 18 being line symmetric. Other than that is the same as FIG.

It is a perspective view of the coplanar track | line used for the high frequency circuit apparatus of this invention. It is a table | surface which shows the shape comparison of the micro split line and coplanar line by a simulator. It is a top view of the high frequency circuit device of the present invention. It is sectional drawing of the high frequency circuit apparatus of this invention. It is an equivalent circuit diagram of the package used for the high frequency circuit device of the present invention. It is a top view of the X section of FIG. It is sectional drawing of the X part of FIG. FIG. 4 is a plan view of a Y portion in FIG. 3. It is sectional drawing of the Y part of FIG. FIG. 4 is a plan view of a Z portion in FIG. 3. It is sectional drawing of the Z section of FIG. It is a top view which shows the Example of the high frequency circuit apparatus of this invention. It is a top view which shows the other Example of the high frequency circuit apparatus of this invention. It is a perspective view of the microstrip line used for the conventional high frequency circuit device. It is a top view of the conventional high frequency circuit device.

Explanation of symbols

9 Coplanar Line 10 Module Board 11 Center Conductor 12A Grounding Conductor 16 Back Grounding Conductor 18 Package 19A Input Leading Electrode 19B Output Leading Electrode 26 Transistor Chip 27 Emitter Leading Electrode 28 Collector Leading Electrode 29 Base Leading Electrode

Claims (6)

A package containing a transistor, a diode, an IC, etc., and having an exposed input lead electrode, output lead electrode, and ground lead electrode; and
A central conductor formed on an insulating module substrate and connected to an input extraction electrode and an output extraction electrode of the package, respectively, and a center conductor having a widened intermediate portion;
The ground conductor is formed so as to surround the center conductor so as to have a gap, and is connected to the back surface ground conductor on the back surface of the module substrate. The ground conductor is formed so as to surround the center conductor and the gap. A high-frequency circuit device. A package including an input extraction electrode, an output extraction electrode, and a ground extraction electrode, which are provided on a diagonal line and exposed, including a transistor, a diode, an IC, and the like;
A central conductor formed on the insulating module substrate in a point symmetry with respect to the center point of the package and connected to the input extraction electrode and the output extraction electrode of the package, respectively, and a widened intermediate portion;
It is formed by surrounding the center conductor so as to have a gap, and is connected to the back surface ground conductor on the back surface of the module substrate.
The high-frequency circuit device according to claim 1, wherein the ground conductor is formed so as to surround the gap with the central conductor. A package including a transistor, a diode, an IC, and the like, and an input extraction electrode, an output extraction electrode, and a ground extraction electrode provided in the same row;
A central conductor formed on an insulating module substrate in line symmetry with the center line of the package and connected to the input extraction electrode and the output extraction electrode of the package, respectively, and a widened middle conductor;
It is formed by surrounding the center conductor so as to have a gap, and is connected to the back surface ground conductor on the back surface of the module substrate.
The high-frequency circuit device according to claim 1, wherein the ground conductor is formed so as to surround the gap with the central conductor. The grounding conductor formed on the surface of the module and the backside grounding conductor are connected by a through hole, and the through hole is formed point-symmetrically or line-symmetrically at the center of the package. 3. The high-frequency circuit device according to any one of 3. 4. The high frequency device according to claim 1, wherein the input extraction electrode is a base extraction electrode of a bipolar transistor, the output extraction electrode is a collector extraction electrode, and the ground extraction electrode is an emitter extraction electrode. Circuit device. 4. The input extraction electrode is a gate extraction electrode of a field effect transistor, the output extraction electrode is a drain extraction electrode, and the ground extraction electrode is a source extraction electrode. High frequency circuit device.

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