JP2005014141A - Method of manufacturing compound element - Google Patents

Method of manufacturing compound element Download PDF

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JP2005014141A
JP2005014141A JP2003181156A JP2003181156A JP2005014141A JP 2005014141 A JP2005014141 A JP 2005014141A JP 2003181156 A JP2003181156 A JP 2003181156A JP 2003181156 A JP2003181156 A JP 2003181156A JP 2005014141 A JP2005014141 A JP 2005014141A
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method
manufacturing
composite element
surface
base
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JP4620939B2 (en )
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Kazuhiko Adachi
一彦 安達
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Ricoh Co Ltd
株式会社リコー
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83143Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/95053Bonding environment
    • H01L2224/95085Bonding environment being a liquid, e.g. for fluidic self-assembly
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/9512Aligning the plurality of semiconductor or solid-state bodies
    • H01L2224/95143Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
    • H01L2224/95146Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium by surface tension
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01018Argon [Ar]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid
    • H01L2924/10158Shape being other than a cuboid at the passive surface
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a compound element capable of further increasing the effect by surface tension, by forming a high wettability area and a low wettability area by a simple method. <P>SOLUTION: Liquid (an adhesive) 14 is dripped on a projecting part 13 of a base 11. The dripped liquid 14 expands by wetting a surface of the projecting part 13, and is finally stabilized in a semispherical state by the surface tension. Next, a joining object member 12 is contacted with the surface liquid 14 of the projecting part 13, and in a moment, the liquid 14 expands by wetting a surface of the member 12, and stops in an end part. At this time, the member 12 held by weak suction rotates and moves so as to align with a shape of the projecting part 13 of the base 11, and afterwards, the member 12 is further lowered, and is completely contacted with the projecting part 13 of the base 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】 [0001]
【発明の属する技術分野】 BACKGROUND OF THE INVENTION
本発明は、複合素子の製造方法に関する。 The present invention relates to a method for manufacturing a composite element.
【0002】 [0002]
【従来の技術】 BACKGROUND OF THE INVENTION
近年、MEMS技術の進展により、mmオーダー以下のシステムがシリコン基盤をベースに作られるようになっている。 Recently, the development of MEMS technology, so that the order of mm or less of the system is made of silicon foundation base. これらの超小型のシステムは、シリコンの結晶面のエッチング速度の違いを利用した異方性エッチングにより作られる。 These tiny systems are made by anisotropic etching utilizing the difference in etching rate of the crystal plane of the silicon. この技術は、ウエハーレベルでしかもシリコン集積化技術を利用して極めて高精度に作ることが可能であるという利点がある。 This technique has the advantage that the wafer-level yet utilizing silicon integration technology it is possible to make extremely high precision. しかし、複数の機能を付加するためには、他の物質やベース基盤の異方性エッチングでは形成が不可能な構造の場合には、適切な物質あるいは所定の形状の物質を接合する必要がある。 However, in order to add a plurality of functions, the anisotropic etching of other materials and the base platform when the formation is not possible structures, it is necessary to join the materials of suitable materials or a predetermined shape . システム自身、mmオーダーであることや、光学部材の場合には、その接合精度はμmオーダーが要求される。 And that the system itself is a mm order, in the case of the optical member, the bonding accuracy μm order is required. シリコンを用いたマイクロ光学素子はシリコンオプティカルベンチと呼ばれ、近年盛んに研究されている。 Micro-optical element using the silicon is referred to as a silicon optical bench, it has recently been actively studied.
【0003】 [0003]
これらの要求を達成する技術としては、所望の特性を観察しながら被接合部品を微調整し、その特性が所定の範囲に入ったところの位置で固定するアクティブアライメント法と、特性は観察せずに被接合部材のマーク(アライメントマーク),たとえば外形や金属膜で形成したマークを頼りに位置合わせを行い接合するパッシブアライメント法がある。 As a technique for achieving these requirements, while observing the desired properties to fine-tune to be joined parts, an active alignment method whose characteristics are fixed in position at which enters the predetermined range, characteristics are not observed mark workpieces (alignment mark), for example a passive alignment method for bonding aligns relying on marks formed in the outer shape and the metal film is in the. アクティブアライメントは、装置が複雑になることと、位置合わせに多くの時間を必要とするために、パッシブアライメントでの実装が望まれている。 Active alignment are that the device becomes complicated, because it requires a lot of time for alignment, mounting on the passive alignment is desired. しかし、パッシブアライメント法を用いた位置合わせ装置(ダイボンダー)は、高分解能のXYZステージと被接合部材あるいは基盤側のアライメントマークを検出するために画像の入力および処理装置が必要であり、極めて高価な装置となっている。 However, the alignment device using a passive alignment method (die bonder) is required to input and processing apparatus for an image to detect the alignment mark of the XYZ stage and the bonded member or base side of the high resolution, very expensive It has become a unit. そこで、粗い位置合わせでも、基盤上の所定の位置に高精度に位置合わせする方法として、液体の表面張力を利用して自己整合的に位置合わせするセルフアライメント技術の研究が盛んに行われている。 Therefore, even in rough alignment, as a method of aligning with high accuracy at a predetermined position on the base, the study of self-alignment technique for aligning in a self-aligned manner it has been actively utilizing the surface tension of the liquid .
【0004】 [0004]
図8(a)乃至(d)は、特許文献1に開示されている従来技術(セルフアライメント技術)の一例を示す図である。 Figure 8 (a) to (d) are diagrams showing an example of a conventional technique disclosed in Patent Document 1 (self-alignment techniques). 図8(a)乃至(d)において、部品1はガラス板で、表面に0.8×0.8mmのガラス表面を残して、周りを撥水性の膜3で覆った構成とする。 In FIG. 8 (a) to (d), component 1 is a glass plate, leaving a glass surface of 0.8 × 0.8 mm on the surface, around a structure covered with a film 3 of water-repellent. さらに、他方の部品4も同じく同じ寸法でガラス表面を残して回りを撥水性膜6で覆った構成とする。 Furthermore, around leaving the glass surface a structure covered with a water-repellent film 6 on the other part 4 is also well same dimensions. 次に、部品4のガラスを露出した部分に水滴7を滴下する(図8(a))。 Next, water droplets 7 on the exposed glass parts 4 parts (FIG. 8 (a)). 水滴7は図8(a)に示すように表面張力により半球状となり、その場に止まる。 Water droplets 7 becomes hemispherical surface tension as shown in FIG. 8 (a), it stops in place. 次に、図8(b)に示すように被接合部材1を前記ガラス露出部上まで搬送し、さらに降下させて水滴7と接触させる。 Then, to convey the workpieces 1 as shown in FIG. 8 (b) to above the glass exposed portion, thereby to further drop in contact with the water droplets 7. 水7は被接合部材1の底部と接触した直後、被接合部材1の裏面に濡れ広がり、水7の広がりは部材1の端部で止まる(図8(c))。 Water 7 immediately after contact with the bottom of the joint member 1, wet and spread on the back surface of the bonded member 1, the spread of the water 7 stops at the ends of the member 1 (FIG. 8 (c)). この時、部材1の端部の水は、接触状態に応じた接触角θで接触する。 At this time, the water of the end portion of the member 1 in contact with a contact angle θ in accordance with the contact state. 次の瞬間、部材1の底部の接触角は基盤側と水との接触角の分布に揃うような力が働くため、図8(d)のように部材1は回転し、セルフアライメントで位置合わせが行われる。 The next moment, since the contact angle of the bottom member 1 of a force such as to be aligned to the distribution of contact angle between the base side and the water, member 1 as shown in FIG. 8 (d) is rotated, alignment by self-alignment It is carried out. これが、液体の表面張力を利用したセルフアライメント技術で、古くはハンダバンプを用いた半導体集積回路の高精度実装技術として知られている。 This is a self-alignment technique using the surface tension of the liquid, old is known as a high-precision packaging technology of a semiconductor integrated circuit using a solder bump.
【0005】 [0005]
このような表面張力を利用したセルフアライメント技術実現のためには、▲1▼濡れ性の高い領域と濡れ性の低い領域の形成法、▲2▼水滴(液体、接着剤)の微小滴下法、▲3▼被接合部材へ作用する力の増加、が重要となる。 Such surface tension for self-alignment techniques implemented utilizing the, ▲ 1 ▼ formation method of high wettability region and a low wettability region, ▲ 2 ▼ water droplets (liquid adhesive) small dropping method, ▲ 3 ▼ increase in the force acting on the workpieces, is important. しかし、従来技術では、濡れ性の高い領域としてガラス,多結晶シリコンなどの開示があるものの、濡れ性の低い領域として使用可能な材料については何ら示されていない。 However, in the prior art, glass as high wettability region, although there is disclosed such as polycrystalline silicon, not show any for materials that can be used as a low wettability region. また、従来では、濡れ性の低い領域として特殊な材料が必要であるという不具合があった。 Further, conventionally, there has been a problem that a special material as the low wettability region is required.
【0006】 [0006]
【特許文献1】 [Patent Document 1]
特開2001−87953号公報【0007】 Japanese Unexamined Patent Publication No. 2001-87953 Publication [0007]
【発明が解決しようとする課題】 [Problems that the Invention is to Solve
本発明は、上記従来技術の問題を解決し、簡便な方法によって濡れ性の高い領域と濡れ性の低い領域とを形成できて、より表面張力による効果を増大させることの可能な複合素子の製造方法を提供することを目的としている。 The present invention, the above problems of the prior art persists, can form a low regions of high wettability wettability region by a simple method, preparation of the possible composite element to increase the effect of the more tension it is an object to provide a method.
【0008】 [0008]
【課題を解決するための手段】 In order to solve the problems]
上記目的を達成するために、請求項1記載の発明は、基盤に被接合部材を接合して複合素子を形成する複合素子の製造方法であって、 To achieve the above object, the invention according to claim 1 is a method for producing a composite element to form a composite element by bonding the bonded member in foundation,
基盤表面に被接合部材の接合面と相似な形状で濡れ性の高い領域を形成し、その周囲に低い領域を形成する工程と、 Forming a region with a high wettability with the bonding surface, similar to a shape of the workpieces to the base plate surface, and forming a lower region around it,
前記被接合部材の接合面に濡れ性の高い領域を形成し、その周囲に低い領域を形成する工程と、 It said forming a region of high wettability to the joining surface of the joining member, a step of forming a lower region around it,
前記基盤表面の濡れ性の高い領域と被接合部材の濡れ性の高い領域とを液体を介して接触させる工程と、 A step of the wettability regions of high wettability regions of high and workpieces of the base surface contacting through the liquid,
前記被接合部材を基盤に接触させ接合する工程とを有していることを特徴としている。 The are characterized by having a step of bonding the bonded members in contact with the base.
【0009】 [0009]
また、請求項2記載の発明は、請求項1記載の複合素子の製造方法において、前記基盤表面の濡れ性の高い領域として、基盤表面に凸部が形成されていることを特徴としている。 The invention of claim 2, in the method of manufacturing a composite element according to claim 1, wherein, as the high wettability region of the base surface, is characterized in that convex portions are formed on the base plate surface.
【0010】 [0010]
また、請求項3記載の発明は、請求項1記載の複合素子の製造方法において、前記被接合部材の濡れ性の低い領域として、前記被接合部材の底部に段差が設けられていることを特徴としている。 Further, an invention according to claim 3, characterized in the manufacturing method of a composite element according to claim 1, wherein the low wettability region of the workpieces, said stepped at the bottom of the joint member is provided It is set to.
【0011】 [0011]
また、請求項4記載の発明は、請求項1記載の複合素子の製造方法において、前記基盤は半導体であり、前記基盤表面の濡れ性の高い領域は酸化膜であることを特徴としている。 Further, an invention according to claim 4, wherein, in the method of manufacturing a composite element according to claim 1, wherein the base is a semiconductor, is characterized by high wettability region of the base surface is an oxide film.
【0012】 [0012]
また、請求項5記載の発明は、請求項4記載の複合素子の製造方法において、前記基盤はシリコンであり、前記基盤表面の濡れ性の高い領域はシリコン酸化膜であることを特徴としている。 Further, an invention according to claim 5, wherein, in the method of manufacturing a composite element according to claim 4, wherein said base is silicon, are characterized by high wettability region of the base surface is a silicon oxide film.
【0013】 [0013]
また、請求項6記載の発明は、請求項1記載の複合素子の製造方法において、前記基盤表面の濡れ性の高い領域は、他の面よりも粗い表面となっていることを特徴としている。 Further, an invention according to claim 6, wherein, in the method of manufacturing a composite element according to claim 1, wherein high wettability region of the base surface is characterized in that has a rougher surface than other surfaces.
【0014】 [0014]
また、請求項7記載の発明は、請求項1記載の複合素子の製造方法において、前記基盤表面の濡れ性の高い領域は、プラズマ処理されていることを特徴としている。 Further, an invention according to claim 7, wherein, in the method of manufacturing a composite element according to claim 1, wherein high wettability of the base plate surface area is characterized by being a plasma treatment.
【0015】 [0015]
また、請求項8記載の発明は、請求項1記載の複合素子の製造方法において、前記基盤表面の濡れ性の高い領域は、被接合部材の接合面の辺に対応した形状であることを特徴としている。 Further, characterized in that the invention according to claim 8, in the method for manufacturing a composite element according to claim 1, wherein high wettability region of the base surface is a shape corresponding to the sides of the joint surface of the joint member It is set to.
【0016】 [0016]
また、請求項9記載の発明は、請求項1記載の複合素子の製造方法において、前記液体として紫外線硬化型樹脂が用いられていることを特徴としている。 The invention of claim 9 is a method of manufacturing a composite element according to claim 1, it is characterized in that UV-curable resin is used as the liquid.
【0017】 [0017]
また、請求項10記載の発明は、請求項1記載の複合素子の製造方法において、接合箇所における前記基盤表面の濡れ性の高い領域と被接合部材の濡れ性の高い領域とは、複数個に分割されていることを特徴としている。 The invention of claim 10, wherein, in the method of manufacturing a composite element according to claim 1, wherein, wettability higher regions of the base surface at the joint and the wettability higher region of the joint member, a plurality It is characterized by being divided.
【0018】 [0018]
【発明の実施の形態】 DETAILED DESCRIPTION OF THE INVENTION
以下、本発明の実施形態を図面に基づいて説明する。 It will be described below with reference to embodiments of the present invention with reference to the drawings.
【0019】 [0019]
図1(a)乃至(d)は、本発明に係る複合素子の第1の製造工程例を示す図である。 FIGS. 1 (a) to (d) are diagrams showing a first example of a process of manufacturing the composite element according to the present invention. この第1の製造工程例では、基盤11には、接合する直方体状の被接合部材12の底部と相似の形状の凸部13が設けられている。 In the first manufacturing process example, the base 11, the convex portion 13 of the shape of the bottom portion and similar of rectangular workpieces 12 are provided to be joined. 基盤11の材質に制約はないが、その平坦性および加工性からシリコンが適している。 Without limitation to the material of the base 11, the silicon is suitable from the flatness and workability. 基盤11の表面に形成された凸部13は、凸形状となっていることで、その表面は濡れ性が高く、逆にその端部、つまり段差では、液体はそれ以上濡れ広がらないので、濡れ性の低い領域とすることができる。 Projection 13 formed on the surface of the substrate 11, by which a convex shape, its surface is highly wettable, its ends reversed, i.e. the level difference, since the liquid will not wet and spread more, wet it can be a sexual low region. このように、本発明では、同一材料を使いながら、濡れ性を制御することが可能となる。 Thus, in the present invention, while using the same material, it is possible to control the wettability.
【0020】 [0020]
本発明の複合素子の第1の製造工程例をより詳細に説明する。 The first example of a process of manufacturing the composite element of the present invention will be described in more detail. まず、基盤11の表面にホトリソ技術を用いて、被接合部材12の底部と相似の形をレジストで転写する。 First, using the photolithography technology on the surface of the base 11, to transfer the shape of similar to the bottom portion of the joint member 12 in the resist. 次に、エッチング液を使ったウエットエッチング法か、腐食性ガスを用いたドライエッチング技術により数μmから数十μmエッチングを行い、凸部形状を精度良く基盤表面に転写する。 Next, a wet etching method or using an etchant, performs several tens μm etching of several μm by a dry etching technique using a corrosive gas, transferring the convex shape to accurately foundation surface. 図1(a)には、基盤11に凸部13が形成された様子が示されている。 In FIG. 1 (a) shows a state where the convex portion 13 is formed on the base 11.
【0021】 [0021]
次に、図1(b)に示すように、基盤11の凸部13上に、液体(例えば紫外線硬化樹脂などの接着剤)14を滴下する。 Next, as shown in FIG. 1 (b), on the projection 13 of the base 11, is added dropwise 14 (adhesive such as an ultraviolet curable resin) liquid. 滴下した樹脂14は、凸部13の表面を濡れ広がり、最終的に表面張力により半球状態で安定する。 Dropping resin 14 spreads wet surfaces of the projections 13, finally stable hemispherical state by the surface tension. 次に、図1(c)に示すように、被接合部材12をほぼ基盤11の凸部13の上方まで搬送し、そのまま降下させて、凸部13の表面の液体(接着剤)14と接触させる。 Next, as shown in FIG. 1 (c), transported to above the convex portion 13 of substantially foundation 11 the workpieces 12, as it is lowered, the surface of the liquid (adhesive) of the convex portions 13 14 and the contact make. その瞬間、液体(接着剤)14は部材12の表面を濡れ広がり、端部で止まる。 At that moment, the liquid (adhesive) 14 spreads wet the surface of the member 12 stops at the end. この時、部材12の底部の接触角の分布が基盤11の凸部13側の接触角の分布と等しくなるように力が働き、弱い吸引で保持されていた部材12が、図1(d)に示すように基盤11の凸部13の形状に揃うように回転および移動する。 At this time, force acts as the distribution of the contact angle of the bottom of the member 12 is equal to the distribution of contact angle of the convex portion 13 side of the base 11, the member 12 which is held by a weak suction, Fig 1 (d) rotation and moved to align the shape of the convex portion 13 of the base 11 as shown in. その後、部材12を更に降下させて、完全に基盤11の凸部13と接触させる。 Then, to further lower the member 12, it is in full contact with the projection 13 of the base 11. その後、直ちに紫外線を照射すれば、部材12は固定される。 Thereafter, if immediately irradiated with ultraviolet rays, member 12 is fixed.
【0022】 [0022]
このように、本発明によれば、従来法に比べ容易に濡れ性制御が可能になるという利点がある。 Thus, according to the present invention has an advantage of easily wettable control compared with the conventional method becomes possible.
【0023】 [0023]
また、図2(a)乃至(d)は本発明に係る複合素子の第2の製造工程例を示す図である。 Further, FIGS. 2 (a) to (d) are diagrams showing a second example of a process of manufacturing the composite element according to the present invention. この第2の製造工程例では、基盤11には、表面に薄い酸化膜15が形成されたシリコンを用い、この場合、清浄な半導体表面は濡れ性が低く、逆に酸化膜は濡れ性が高い性質を利用し、濡れ性制御を行うことができる。 In the second manufacturing process example, the base 11, using the silicon thin oxide film 15 formed on its surface, in this case, the clean semiconductor surface has low wettability, conversely oxide film has a higher wettability utilizing the property, it is possible to perform the wettability control.
【0024】 [0024]
本発明の複合素子の第2の製造工程例をより詳細に説明する。 The second example of a process of manufacturing the composite element of the present invention will be described in more detail. 先ず、基盤11として用意した酸化膜付シリコン表面に被接合部材12の底部形状をレジストパターンで転写する。 First, transferring the bottom shape of the workpieces 12 with the resist pattern in the oxide film with the silicon surface was prepared as the foundation 11. 次に、フッ化水素水溶液からなるエッチング液により、レジスト下の酸化膜15を残して表面の酸化膜をエッチングして除去し、次いで、レジストを除去する(図2(a))。 Next, the etching solution composed of hydrogen fluoride aqueous solution, leaving the oxide film 15 under the resist is removed by etching the oxide film on the surface, then, the resist is removed (FIG. 2 (a)).
【0025】 [0025]
次に、基盤11の酸化膜15上に、液体(例えば紫外線硬化樹脂などの接着剤)14を滴下する。 Then, on the oxide film 15 of the substrate 11, it is added dropwise 14 (adhesive such as an ultraviolet curable resin) liquid. 滴下した液体(接着剤)14は酸化膜15の表面を濡れ広がり、最終的に図2(b)のように表面張力により半球状態で安定する。 Dropping liquid (adhesive) 14 spreads wet the surface of the oxide film 15, the surface tension as finally FIG 2 (b) is stable hemispherical state. 次に、被接合部材12をほぼ基盤11の酸化膜15の上方まで搬送し、そのまま降下させて、図2(c)に示すように、酸化膜15の表面の液体(接着剤)14と接触させる。 Then, to convey the workpieces 12 to above the oxide film 15 of approximately base 11, as it is lowered, as shown in FIG. 2 (c), contacting the surface of the liquid (adhesive) 14 of the oxide film 15 make. その瞬間、液体(接着剤)14は、部材12の表面を濡れ広がり、端部で停止する。 At that moment, the liquid (adhesive) 14 spreads wet the surface of the member 12, it stops at the end. この時、部材12の底部の接触角の分布が酸化膜15側の接触角の分布と等しくなるように力が働き、弱い吸引で保持されていた部材12が、図2(d)に示すように基盤11の酸化膜15の形状に揃うように回転および移動する。 At this time, the distribution of the contact angle of the bottom of the member 12 is force acts so as to be equal to the distribution of contact angle of the oxide film 15 side, is member 12 which is held by a weak suction, as shown in FIG. 2 (d) rotation and moved to align the shape of the oxide film 15 of the base 11 in. その後、部材12を更に降下させて、完全に基盤11上の酸化膜15と接触させる。 Then, to further lower the member 12, it is in full contact with the oxide film 15 on the base 11. その後、直ちに紫外線を照射すれば、部材12は固定される。 Thereafter, if immediately irradiated with ultraviolet rays, member 12 is fixed.
【0026】 [0026]
また、図3(a)乃至(d)は本発明に係る複合素子の第3の製造工程例を示す図である。 Further, FIGS. 3 (a) to (d) are diagrams showing a third example of a process of manufacturing the composite element according to the present invention. この第3の製造工程例では、基盤11にはシリコンを用い、この場合、基盤11の表面性により濡れ性が制御できる性質を利用する。 In the third manufacturing process example, using a silicon foundation 11, in this case, utilizes a property that can control the wettability by the surface of the base 11. 液体の濡れ性は基盤の平面性でも変化し、シリコンなどの場合、表面を荒すことで(表面を粗くすることで)、濡れ性を高くすることができる。 Wettability of the liquid varies in the plane of the base, if such as silicon, by roughening the surface (by roughening the surface), it is possible to increase the wettability.
【0027】 [0027]
本発明の複合素子の第3の製造工程例をより詳細に説明する。 The third example of a process of manufacturing the composite element of the present invention will be described in more detail. 先ず、基盤11として用意したシリコンの表面を、被接合部材12の底部形状を開口したレジストで覆う。 First, the surface of the silicon which is prepared as a basis 11, covered with a resist having an open bottom portion shape of the workpieces 12. 次に、アルゴンを用いたスパッタリングを行い、露出したシリコン表面を粗い表面状態(図3において、符号16の領域)とする。 Next, the sputtering using argon (3, area code 16) rough surface state of the silicon surface exposed to. しかる後、レジストを除去する(図3(a))。 Thereafter, the resist is removed (Figure 3 (a)).
【0028】 [0028]
次に、前記基盤の粗い表面状態とした領域(粗い表面領域)16に、液体(例えば紫外線硬化樹脂などの接着剤)14を滴下する。 Then, the area (rough surface region) 16 that has a rough surface state of the base, is added dropwise 14 (adhesive such as an ultraviolet curable resin) liquid. 滴下した液体(接着剤)14は、粗い表面領域16の端部まで濡れ広がり、図3(b)に示すように最終的に表面張力により半球状態で安定する。 Dropping liquid (adhesive) 14 is wet and spread to the end of the rough surface area 16, stabilizes at a hemisphere state by finally surface tension as shown in FIG. 3 (b). 次に、被接合部材12をほぼ基盤11の粗い表面領域16の上方まで搬送し、そのまま降下させて、粗い表面領域16上の液体(接着剤)14と接触させる(図3(c))。 Next, it conveyed to above the rough surface area 16 of substantially foundation 11 the workpieces 12, as it is lowered, coarse liquid on the surface region 16 (adhesive) 14 is contacted (Figure 3 (c)). その瞬間、液体(接着剤)14は、部材12の表面を濡れ広がり、端部で停止する。 At that moment, the liquid (adhesive) 14 spreads wet the surface of the member 12, it stops at the end. この時、部材12の底部の接触角の分布が粗い表面領域16側の接触角の分布と等しくなるように力が働き、弱い吸引で保持されていた部材12が、図3(d)に示すように基盤11の粗い表面領域16の形状に揃うように回転および移動する。 At this time, a force acts so as to be equal to the distribution of contact angle distribution rough surface area 16 side of the contact angle of the bottom of the member 12, the member 12 which is held by a weak suction, shown in FIG. 3 (d) rotation and moved to align the shape of the rough surface area 16 of the base 11 as. その後、部材12を更に降下させて、完全に基盤11と接触させる。 Then, to further lower the member 12, it is in full contact with the base 11. その後、直ちに紫外線を照射すれば、部材12は固定される。 Thereafter, if immediately irradiated with ultraviolet rays, member 12 is fixed.
【0029】 [0029]
なお、図3(a)の工程において、表面を粗い状態にする方法としては、サンドブラスト法も使用できる。 In the step of FIG. 3 (a), as a method for the surface rough state, sandblasting method can be used.
【0030】 [0030]
また、表面の濡れ性制御としては、表面をプラズマ処理する方法も効果的であり、表面をプラズマ処理する方法も上述した第3の製造工程例と同様な工程で行うことができる。 As the wettability control of the surface, a method of plasma treatment of the surface is also effective, it can be a method of plasma treatment of the surface carried out in the third manufacturing process examples similar steps as described above.
【0031】 [0031]
なお、上述した第1乃至第3の製造工程例の説明では、被接合部材12の接合面が被接合部材12の底部であるとしたが、被接合部材12の接合面も濡れ性の高い領域として形成されるのが好ましい。 In the description of the first to third manufacturing process example described above, the bonding surfaces of the bonding member 12 has to be a bottom of the joint member 12, a high bonding surface wettability of the bonded members 12 area preferably formed as a.
【0032】 [0032]
例えば図4に示すように、被接合部材12に段差を形成し、その凸部17を濡れ性の高い領域として形成し、その周囲(段差によって凹んだ部分)を濡れ性の低い領域として形成することができる。 For example, as shown in FIG. 4, a step is formed on the bonded member 12, and form a convex portion 17 as a high wettability region, forming the periphery (the portion that is recessed by the step) as a low wettability region be able to.
【0033】 [0033]
このように、基盤表面に被接合部材の接合面と相似な形状で濡れ性の高い領域を形成し、その周囲に低い領域を形成するとともに、被接合部材の接合面にも濡れ性の高い領域を形成し、その周囲に低い領域を形成して、基盤表面の濡れ性の高い領域と被接合部材の濡れ性の高い領域とを液体(接着剤)を介して接触させるのがより一層好ましい。 Thus, to form a region with a high wettability with the bonding surface, similar to a shape of the workpieces to the base plate surface, to form a lower region into the surrounding regions high wettability to the joining surfaces of the workpieces It is formed and to form a lower region around it, and still more preferably, to contact the high wettability of the wettability regions of high and the workpieces base surface region through the liquid (adhesive). このように、被接合部材12にも段差を形成することで、濡れ性をより一層良好にコントロールすることができる。 In this manner, by forming a step in the bonded member 12, it is possible to control the wettability even more favorable.
【0034】 [0034]
また、図5(a)乃至(e)は本発明に係る複合素子の第4の製造工程例を示す図である。 Further, FIGS. 5 (a) to (e) are views showing a fourth example of a process of manufacturing the composite element according to the present invention. この第4の製造工程例は、基盤11の表面の濡れ性の高い領域を被接合部材12の接合面の辺に沿って形成することで、被接合部材12の接合面と液体との界面の長さが長くなり、その結果、被接合部材12へ作用する力が増加する効果を利用している。 The fourth manufacturing process example, the high wettability region of the surface of the substrate 11 by forming along the edges of the joint surfaces of the workpieces 12, the interface between the bonding surface and the liquid between the bonded members 12 length longer, as a result, by utilizing the effect of forces acting on the bonded members 12 increases.
【0035】 [0035]
この第4の製造工程例では、基盤11には、表面に薄い酸化膜15が形成されたシリコンを用いる。 In the fourth manufacturing process example, the base 11, a silicon thin oxide film 15 formed on its surface. すなわち、この第4の製造工程例でも、第2の製造工程例と同様に、清浄な半導体表面は濡れ性が低く、逆に酸化膜は濡れ性が高い性質を利用し、濡れ性制御を行うようにしている。 That is, in this fourth manufacturing process example, as in the second manufacturing process example, clean semiconductor surface has low wettability, conversely oxide film using a high wettability properties, performs wettability control It is way.
【0036】 [0036]
本発明の複合素子の第4の製造工程例をより詳細に説明する。 A fourth example of a process of manufacturing the composite element of the present invention will be described in more detail. 先ず、基盤11として用意した酸化膜付シリコン表面に四角柱状の被接合部材12の底部の辺に沿った形状(つまり中央が開口した桝形形状)のレジストパターンを転写する。 First, the resist pattern is transferred to the shape along the bottom side of the quadrangular prism bonded members 12 in the oxide film with the silicon surface was prepared as the foundation 11 (Masugata shape center is open that is). 次に、フッ化水素水溶液からなるエッチング液により、レジスト下の酸化膜を残して表面の酸化膜をエッチングして除去する。 Next, the etching solution consisting of an aqueous hydrogen fluoride solution, is removed by etching the oxide film on the surface leaving the oxide film under the resist. 図5(a)には、中央が開口した酸化膜15を残した基盤11の表面が示されている。 In FIG. 5 (a), there is shown a surface of the substrate 11 leaving the oxide film 15 center is open.
【0037】 [0037]
レジストを除去した後、前記基盤11の酸化膜15上に液体(例えば紫外線硬化樹脂などの接着剤)14を滴下する。 After removing the resist, it is added dropwise 14 (adhesive such as an ultraviolet curable resin) liquid oxide film 15 on the base 11. 滴下した液体(接着剤)14は、酸化膜15の表面を濡れ広がり、図5(b)に示すように最終的に表面張力により半球状態で安定する。 Dropping liquid (adhesive) 14 spreads wet the surface of the oxide film 15 is stable hemispherical state by finally surface tension as shown in Figure 5 (b). 次に、基盤11に形成されている中央が開口した酸化膜15のます形状と同じます形状の濡れ性の高い領域18が形成された被接合部材12をほぼ基盤11の酸化膜15の上方まで搬送し、そのまま降下させて、酸化膜15の表面の液体(接着剤)14と接触させる(図5(c))。 Then, to above the oxide film 15 of approximately base 11 to the workpieces 12 wettability higher region 18 of the same masu shape as masu shape of the oxide film 15 which is the center formed in the base 11 and an opening formed conveyed directly is lowered into contact with the surface of the liquid (adhesive) 14 of the oxide film 15 (FIG. 5 (c)). その瞬間、液体(接着剤)14は、部材12の領域18の表面を濡れ広がり、端部で停止する。 At that moment, the liquid (adhesive) 14 spreads wet surface of the region 18 of the member 12, it stops at the end. この時、部材12(領域18)の底部の接触角の分布が酸化膜15側の接触角の分布と等しくなるように力が働き、弱い吸引で保持されていた部材12(領域18)が、図5(d)に示すように基盤11の酸化膜15の形状に揃うように回転および移動する。 In this case, member 12 (region 18) the distribution of the contact angle of the bottom force acts so as to be equal to the distribution of contact angle of the oxide film 15 side, is weak suction member 12 has been held in the (area 18), 5 rotation and moved to align the shape of the oxide film 15 of the substrate 11 as shown in (d). この構造では、液体14と被接合部材12との接触界面の長さは、例えば第2の製造工程例の場合の約2倍になるので、表面張力により作用する力も倍増し、より大きな位置修正効果が得られる。 In this structure, the liquid 14 the length of the contact interface between the bonded member 12 has, for example, is about twice that of the second manufacturing process example, even doubled force exerted by surface tension, the larger the position correction effect can be obtained.
【0038】 [0038]
その後、部材12を更に降下させて、完全に基盤11と接触させる(図5(e))。 Then, to further lower the member 12, it is in full contact with the base 11 (FIG. 5 (e)). その後、直ちに紫外線を照射すれば、部材12は固定される。 Thereafter, if immediately irradiated with ultraviolet rays, member 12 is fixed.
【0039】 [0039]
以上のように、本発明は、基盤に被接合部材を接合して複合素子を形成する複合素子の製造方法であって、 As described above, the present invention is a method for producing a composite element to form a composite element by bonding the bonded member in foundation,
基盤表面に被接合部材の接合面と相似な形状で濡れ性の高い領域を形成し、その周囲に低い領域を形成する工程と、 Forming a region with a high wettability with the bonding surface, similar to a shape of the workpieces to the base plate surface, and forming a lower region around it,
前記被接合部材の接合面に濡れ性の高い領域を形成し、その周囲に低い領域を形成する工程と、 It said forming a region of high wettability to the joining surface of the joining member, a step of forming a lower region around it,
前記基盤表面の濡れ性の高い領域と被接合部材の濡れ性の高い領域とを液体(接着剤)を介して接触させる工程と、 Contacting a wettability regions of high wettability regions of high and workpieces of the base surface via a liquid (adhesive),
前記被接合部材を基盤に接触させ接合する工程とを有していることを特徴としている。 The are characterized by having a step of bonding the bonded members in contact with the base.
【0040】 [0040]
ここで、基盤表面の濡れ性の高い領域として、基盤表面に凸部を形成することができる。 Here, as the high wettability of the substrate surface area, it is possible to form the projections on the base plate surface.
【0041】 [0041]
また、被接合部材の濡れ性の低い領域として、底部に段差を設けることができる。 Further, as the low wettability region of the bonded member it can be provided a step in the bottom.
【0042】 [0042]
また、基盤を半導体にし、基盤表面の濡れ性の高い領域を酸化膜とすることができる。 Moreover, the foundation semiconductor, the high wettability of the substrate surface area can be an oxide film.
【0043】 [0043]
より具体的に、基盤をシリコンとし、基盤表面の濡れ性の高い領域をシリコン酸化膜とすることができる。 More specifically, the base and silicon, the high wettability of the substrate surface region may be a silicon oxide film.
【0044】 [0044]
また、基盤表面の濡れ性の高い領域は、他の面よりも粗い表面とすることができる。 Also, high wettability region of the substrate surface can be a rough surface than another surface.
【0045】 [0045]
また、基盤表面の濡れ性の高い領域は、プラズマ処理されているものとすることができる。 The region with high wettability of the substrate surface can be assumed to be plasma processed.
【0046】 [0046]
また、基盤表面の濡れ性の高い領域は、被接合部材の接合面の辺に対応した形状であるのがより好ましい。 The region with high wettability of the substrate surface, and more preferably in the shape corresponding to the sides of the bonding surfaces of the bonded members.
【0047】 [0047]
また、本発明の複合素子の製造方法において、前記液体として紫外線硬化型樹脂を用いることができる。 In the method for manufacturing a composite element of the present invention, it is possible to use an ultraviolet curable resin as the liquid.
【0048】 [0048]
なお、本発明において(上述した各製造工程例において)、例えば図6(a),(b)に示すように、接合箇所における基盤11表面の濡れ性の高い領域と被接合部材12の濡れ性の高い領域とを、複数個に分割することができる。 Incidentally, (in each manufacturing process example described above) in the present invention, for example, FIG. 6 (a), the (b), the wettability of the region with a high wettability of the substrate 11 surface in the joint and the bonded members 12 and a region of high, can be divided into a plurality. ここで、図6(a),(b)の例では、基盤11表面の濡れ性の高い領域と被接合部材12の濡れ性の高い領域とを、ストライプ状に分割している。 Here, in the example of FIG. 6 (a), (b), dividing the high wettability of the high wettability of the substrate 11 surface area workpieces 12 regions, in stripes. なお、図6(b)は図6(a)のA−A線における断面図である。 Incidentally, FIG. 6 (b) is a sectional view along line A-A of FIG. 6 (a).
【0049】 [0049]
基盤11表面の濡れ性の高い領域と被接合部材12の濡れ性の高い領域とがストライプ状にN個の領域分割されている場合、分割された1つの領域(1つの接合箇所)には、次式(数1)で表わされる力Fが加わる。 If the wettability of a region of high and high wettability of the substrate 11 surface area workpieces 12 are divided N regions in stripes in the divided one region was (one joint) are the force F represented by the following equation (equation 1) is applied.
【0050】 [0050]
【数1】 [Number 1]
F=L・γcosθ×2 F = L · γcosθ × 2
【0051】 [0051]
ここで、Lは図6(a)に示すようにストライプ状に分割された1つの領域の長さである。 Here, L is the length of one of regions divided in a stripe shape as shown in Figure 6 (a). また、θ,γは、図7に示すように、それぞれ、接触角,表面張力である。 Further, theta, gamma, as shown in FIG. 7, respectively, the contact angle and the surface tension.
【0052】 [0052]
分割された1つの領域(1つの接合箇所)には、数1で表わされる力が加わることから、分割されたN個の領域(N個の接合箇所)全体では、次式(数2)で表わされる力Fが加わる。 The divided one region was (one joint), since the force represented by the number 1 is added, the whole divided N regions (N number of joints) is the following formula (Formula 2) the force F represented is applied.
【0053】 [0053]
【数2】 [Number 2]
F=L・γcosθ×2×N F = L · γcosθ × 2 × N
【0054】 [0054]
数2からわかるように、接合箇所における濡れ性の高い領域を複数個に分割することで、液体と被接合部材と液体との界面が長くなり、より大きな表面張力を作用させることが可能になる。 As can be seen from Equation 2, a region with a high wettability in the joint by dividing into a plurality, the interface between the liquid and the bonded member and the liquid is increased, it is possible to apply a larger surface tension . なお、ストライプ状に分割するかわりに、基盤11表面の濡れ性の高い領域と被接合部材12の濡れ性の高い領域とを、例えば円形状などに分割することもできる。 Instead of dividing into stripes, base 11 and a surface wettability of high region and the region of high wettability of the bonding member 12, for example, may be divided into such a circular shape.
【0055】 [0055]
【発明の効果】 【Effect of the invention】
以上に説明したように、請求項1乃至請求項10記載の発明によれば、液体の表面張力を利用したセルフアライメントでの部材の位置合わせを行うのに必要な、濡れ性の高い領域と低い領域を、特殊な材料を使うこと無しに、同一部材かあるいはその酸化物からなる基盤をホトリソ技術で高精度に加工することで、容易に得ることが可能になる。 As described above, according to the invention of claims 1 to 10, wherein, required to perform positioning of the members of the self-alignment utilizing the surface tension of the liquid, low and high wettability region the area, without the use of special materials, the base composed of the same members or their oxides is processed with high accuracy photolithographic techniques, it is possible to easily obtain.
【0056】 [0056]
特に、請求項10記載の発明のように、接合箇所における濡れ性の高い領域を複数個に分割することで、液体と被接合部材と液体との界面が長くなり、より大きな表面張力を作用させることが可能になる。 In particular, as in the invention according to claim 10, a region with a high wettability in the joint by dividing into a plurality, the interface becomes long between the liquid and the bonded member and the liquid exerts a larger surface tension it becomes possible.
【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS
【図1】本発明に係る複合素子の第1の製造工程例を示す図である。 1 is a diagram showing a first example of a process of manufacturing the composite element according to the present invention.
【図2】本発明に係る複合素子の第2の製造工程例を示す図である。 Is a diagram showing a second example of a process of manufacturing the composite element according to the invention; FIG.
【図3】本発明に係る複合素子の第3の製造工程例を示す図である。 3 is a third diagram showing an example of a process of manufacturing the composite element according to the present invention.
【図4】被接合部材に段差を形成した例を示す図である。 4 is a diagram showing an example of forming a step on the workpieces.
【図5】本発明に係る複合素子の第4の製造工程例を示す図である。 5 is a fourth diagram showing an example of a process of manufacturing the composite element according to the present invention.
【図6】接合箇所における基盤表面の濡れ性の高い領域と被接合部材の濡れ性の高い領域とを複数個に分割する構成例を示す図である。 6 is a diagram showing a configuration example of dividing the high wettability of the wettability regions of high and workpieces foundation surface area into a plurality of joint.
【図7】分割された1つの領域(1つの接合箇所)に加わる力Fを説明するための図である。 7 is a diagram for explaining a force F applied to the divided one region was (one joint).
【図8】従来技術の一例を示す図である。 8 is a diagram showing an example of the prior art.
【符号の説明】 DESCRIPTION OF SYMBOLS
11 基盤12 被接合部材13 凸部14 液体(接着剤) 11 base 12 bonded members 13 protrusion 14 the liquid (adhesive)
15 酸化膜16 粗い表面領域17 凸部18 濡れ性の高い領域 15 oxide film 16 a rough surface area 17 protrusion 18 high wettability region

Claims (10)

  1. 基盤に被接合部材を接合して複合素子を形成する複合素子の製造方法であって、 The method of manufacturing the composite element to form a composite element by bonding the bonded member in foundation,
    基盤表面に被接合部材の接合面と相似な形状で濡れ性の高い領域を形成し、その周囲に低い領域を形成する工程と、 Forming a region with a high wettability with the bonding surface, similar to a shape of the workpieces to the base plate surface, and forming a lower region around it,
    前記被接合部材の接合面に濡れ性の高い領域を形成し、その周囲に低い領域を形成する工程と、 It said forming a region of high wettability to the joining surface of the joining member, a step of forming a lower region around it,
    前記基盤表面の濡れ性の高い領域と被接合部材の濡れ性の高い領域とを液体を介して接触させる工程と、 A step of the wettability regions of high wettability regions of high and workpieces of the base surface contacting through the liquid,
    前記被接合部材を基盤に接触させ接合する工程とを有していることを特徴とする複合素子の製造方法。 Method of manufacturing a composite element, characterized by having a step of bonding into contact with the bonded members foundation.
  2. 請求項1記載の複合素子の製造方法において、前記基盤表面の濡れ性の高い領域として、基盤表面に凸部が形成されていることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 1, wherein, as the high wettability of the base surface area method of producing a composite element, wherein a convex portion is formed on the base plate surface.
  3. 請求項1記載の複合素子の製造方法において、前記被接合部材の濡れ性の低い領域として、前記被接合部材の底部に段差が設けられていることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 1, wherein the low wettability region of the workpieces, the method of producing a composite element, characterized in that a step is provided at the bottom of the workpieces.
  4. 請求項1記載の複合素子の製造方法において、前記基盤は半導体であり、前記基盤表面の濡れ性の高い領域は酸化膜であることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 1, wherein the base is a semiconductor, manufacturing method of a composite element having high wettability region of the base surface, characterized in that an oxide film.
  5. 請求項4記載の複合素子の製造方法において、前記基盤はシリコンであり、前記基盤表面の濡れ性の高い領域はシリコン酸化膜であることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 4, wherein said base is silicon, the manufacturing method of the composite element, wherein the high wettability region of the base surface is a silicon oxide film.
  6. 請求項1記載の複合素子の製造方法において、前記基盤表面の濡れ性の高い領域は、他の面よりも粗い表面となっていることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 1, wherein high wettability region of the base surface, method of manufacturing a composite element, characterized in that has a rougher surface than other surfaces.
  7. 請求項1記載の複合素子の製造方法において、前記基盤表面の濡れ性の高い領域は、プラズマ処理されていることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 1, wherein, wettability higher regions of the base surface, method of manufacturing a composite element, characterized in that it is plasma treatment.
  8. 請求項1記載の複合素子の製造方法において、前記基盤表面の濡れ性の高い領域は、被接合部材の接合面の辺に対応した形状であることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 1, wherein high wettability region of the base surface, method of manufacturing a composite element, characterized in that a shape corresponding to the sides of the bonding surfaces of the bonded members.
  9. 請求項1記載の複合素子の製造方法において、前記液体として紫外線硬化型樹脂が用いられていることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 1, wherein method of producing a composite element, characterized in that the ultraviolet curable resin is used as the liquid.
  10. 請求項1記載の複合素子の製造方法において、接合箇所における前記基盤表面の濡れ性の高い領域と被接合部材の濡れ性の高い領域とは、複数個に分割されていることを特徴とする複合素子の製造方法。 The method of manufacturing a composite element according to claim 1, wherein, wettability higher regions of the base surface at the joint and the wettability higher region of the joining member is characterized by being divided into a plurality complex manufacturing method for the device.
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