JP2004346295A - Highly efficient method of purification for liquid crystal having high specific resistance and device for the same - Google Patents
Highly efficient method of purification for liquid crystal having high specific resistance and device for the same Download PDFInfo
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000000746 purification Methods 0.000 title claims abstract description 34
- 238000001962 electrophoresis Methods 0.000 claims abstract description 87
- 229910017053 inorganic salt Inorganic materials 0.000 claims abstract description 16
- 238000010521 absorption reaction Methods 0.000 claims abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 239000002131 composite material Substances 0.000 claims description 21
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 150000003839 salts Chemical class 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000006297 dehydration reaction Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 230000018044 dehydration Effects 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021536 Zeolite Inorganic materials 0.000 claims description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010457 zeolite Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000007670 refining Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- C09K19/00—Liquid crystal materials
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- B01D57/00—Separation, other than separation of solids, not fully covered by a single other group or subclass, e.g. B03C
- B01D57/02—Separation, other than separation of solids, not fully covered by a single other group or subclass, e.g. B03C by electrophoresis
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- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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Abstract
Description
本発明は比抵抗の高い液晶の精製方法及び装置、特に塩吸収方法と電気泳動方法を使用する比抵抗の高い液晶の精製方法及び装置並びに多量のTFT液晶を短時間で効率良く精製するための電気泳動装置に関する。 The present invention relates to a method and an apparatus for purifying a liquid crystal having a high specific resistance, particularly to a method and an apparatus for purifying a liquid crystal having a high specific resistance using a salt absorption method and an electrophoresis method, and to efficiently purify a large amount of TFT liquid crystals in a short time. It relates to an electrophoresis apparatus.
液晶ディスプレイ(LCD)は薄さ、軽量、電力保存、及び低放射線の特徴を有する。薄膜トランジスタ(TFT)の技術はLCDをカラーの世界にもたらし、これは従来のCRTモニターを置換する勢いを持ち、大きな市場潜在性を有する。TFT-LCDは高い比抵抗の、即ち、高純度の液晶を必要とする。結果として、多くの液晶が微量の汚染のために製造過程でスクラップにしなければならない。現行のLCDパネル技術では、歩留りが50%よりわずかに大きく、一方、汚染された液晶の30%〜50%が捨てられなければならない。液晶は高単価の薬品であるので、廃液晶のリサイクル、精製及び再利用が重要な技術と考えられる。 Liquid crystal displays (LCDs) have the features of thinness, light weight, power conservation, and low radiation. Thin film transistor (TFT) technology brings LCDs to the color world, which has the momentum to replace traditional CRT monitors and has great market potential. TFT-LCD requires a liquid crystal with high specific resistance, that is, high purity. As a result, many liquid crystals must be scrapped during the manufacturing process due to trace contamination. With current LCD panel technology, yields are slightly greater than 50%, while 30% to 50% of contaminated liquid crystals must be discarded. Since liquid crystals are expensive chemicals, recycling, refining and reusing waste liquid crystals are considered important technologies.
液晶のリサイクルに関する幾つかの技術が、無機塩及び有機溶媒を添加し、次いで加熱し、撹拌することによる液晶の精製方法を記載した特開平8-277391号をはじめとする特許に開示されている。しかしながら、その方法は低純度要件でもって、またTFT液晶が必要とするものよりもかなり高い不純物を含む液晶を精製し得るにすぎず、それ故、高い比抵抗値を要求するTFT液晶の如き液晶を精製し、リサイクルするのには使用し得ない。また、電気泳動方法を使用することにより液晶を精製する幾つかの技術があり、これらは特開昭50-108186号、同51-011079号、特開平4-171419号、同4-288520号、同8-297290号、及び特開2002-60752の特許請求の範囲に記載されている。しかしながら、このような技術はあらゆるその他のメカニズムを組み合わせないで精製のための純粋な電気泳動方法を使用する。 Some techniques relating to the recycling of liquid crystals are disclosed in patents such as JP-A-8-277391 which describes a method for purifying liquid crystals by adding an inorganic salt and an organic solvent, and then heating and stirring. . However, the method can only purify liquid crystals with low purity requirements and containing impurities that are significantly higher than those required by TFT liquid crystals, and therefore liquid crystals such as TFT liquid crystals that require high resistivity values. Cannot be used for purification and recycling. There are also several techniques for purifying liquid crystals by using an electrophoresis method, and these are described in JP-A-50-108186, JP-A-51-011079, JP-A-4-171419, JP-A-4-288520, No. 8-297290 and claims in JP-A-2002-60752. However, such techniques use pure electrophoretic methods for purification without combining any other mechanisms.
上記特開昭50-108186号の特許請求の範囲は、或る種のガスをポンプで除去して(真空にするために)、外部電界を適用することによる液晶の精製方法を記載している。液晶が一つの貯蔵タンクから別のタンクに移動する場合、それは外壁に備えられた電極を含む管を通過する。電極が精製目的のために不純物イオンを吸収するであろう。しかしながら、1cmより大きい電極クリアランスのために強い電界が確立し得ず、また液晶がほんの限られた時間しか電気泳動を受けないので、液晶は制限された程度にしか精製し得ない。上記特開平4-171419号の特許請求の範囲は液晶が真空環境中でLCDパネルに充填されている場合の液晶の精製方法を明らかにしている。電界が液晶容器に外部適用されて不純物イオンを吸収してこのようなイオンがパネルに吸収される可能性を低減する。しかしながら、1Vの電圧が1cmより大きいクリアランスを有する電極に使用される。結果として、TFT液晶が実質的に精製し得ない。上記特開平4-288520号の特許請求の範囲はLCDパネルを外部電界中で充填する方法を明らかにしている。液晶を含むのに使用される金属容器はまたカソードとして作用し、これは増大された電極領域を送出する。加えて、その電圧は20Vまで増大される。しかしながら、電極は依然として1cmより大きいクリアランスを有するので、その方法はTFT液晶を精製するのに直接使用し得ない。 The claims of JP-A-50-108186 describe a method of purifying liquid crystals by removing certain gases by a pump (to create a vacuum) and applying an external electric field. . As the liquid crystal moves from one storage tank to another, it passes through a tube containing electrodes provided on the outer wall. The electrode will absorb impurity ions for purification purposes. However, liquid crystals can only be purified to a limited extent because strong electric fields cannot be established due to electrode clearances greater than 1 cm and the liquid crystals undergo electrophoresis for only a limited time. The claims of the above-mentioned Japanese Patent Application Laid-Open No. 4-171419 clarify a method of purifying a liquid crystal when the liquid crystal is filled in an LCD panel in a vacuum environment. An electric field is applied externally to the liquid crystal container to absorb impurity ions and reduce the likelihood of such ions being absorbed by the panel. However, a voltage of 1 V is used for electrodes having a clearance greater than 1 cm. As a result, the TFT liquid crystal cannot be substantially purified. The claims of the above-mentioned Japanese Patent Application Laid-Open No. 4-288520 disclose a method of filling an LCD panel in an external electric field. The metal container used to contain the liquid crystal also acts as the cathode, which delivers an increased electrode area. In addition, the voltage is increased to 20V. However, the method cannot be used directly to purify TFT liquid crystals because the electrodes still have a clearance of more than 1 cm.
上記特開平8-297290号の特許請求の範囲はSiO2スパッタリングコートを使用して電極クリアランスを0.01cmまで減少し、また電圧を500Vまで増大する。不運なことに、コートに含まれるSiO2はまた不純物イオンを放出するというリスクをまねく。それ故、その方法はTFT液晶の要件内に入るSR値を依然として提供し得ない。上記の四つの特許請求の範囲に明らかにされた精製技術のいずれもが本発明に記載されるTFT液晶又は一層高い純度もしくはSR値を有するあらゆるその他の液晶を有効に精製するのに充分ではないが、それらは低純度要件を有する液晶、例えば、STN液晶を精製するのに使用し得る。
上記特開2002-60752の特許請求の範囲には、300Vの電極が電気泳動精製のために1cmのクリアランスを有する電極に適用される場合の真空環境中の高い比抵抗(HSR)の液晶の精製方法が記載されている。反復の電極洗浄により、HSR液晶が2〜17時間で精製し得る。しかしながら、電極面積は10cm2であり、1サイクルあたり、わずかに約30mlの液晶が加工されるにすぎない。それ故、その方法は大量プラント生産(これは精製が大規模で行なわれることを必要とする)に直接適用し得ない。
Claims of the Japanese Patent Laid-Open No. 8-297290 is an electrode clearance was reduced to 0.01cm using SiO 2 sputtering coating, also increasing the voltage up to 500V. Unfortunately, the SiO 2 contained in the coat also carries the risk of releasing impurity ions. Therefore, the method still cannot provide SR values that fall within the requirements of TFT liquid crystals. None of the purification techniques disclosed in the above four claims are sufficient to effectively purify the TFT liquid crystal described in the present invention or any other liquid crystal having higher purity or SR value. However, they can be used to purify liquid crystals with low purity requirements, for example STN liquid crystals.
The claims of the above-mentioned JP-A-2002-60752 describe the purification of a liquid crystal having a high specific resistance (HSR) in a vacuum environment when a 300 V electrode is applied to an electrode having a clearance of 1 cm for electrophoretic purification. A method is described. With repeated electrode washing, the HSR liquid crystal can be purified in 2-17 hours. However, the electrode area is 10 cm 2 and only about 30 ml of liquid crystal is processed per cycle. Therefore, the method is not directly applicable to mass plant production, which requires refining to be performed on a large scale.
HSR、高純度液晶をリサイクルする際の上記技術の欠点を解消するために、本発明は一層高い純度及びSR値を有するTFT液晶及びその他の液晶の大量プラント精製に適している、精製方法のための装置を含む、一連の技術を確立する。このような液晶は、金属不純物イオンが5ppb以下であり、かつSRが1013Ωcmより高いことを必要とするTFT液晶について指示される。
本発明はHSR液晶の精製方法を提供することを目的とする。それは無機塩吸収方法と電気泳動方法を組み合わせて汚染された液晶を精製する。リサイクルされる液晶は1013Ωcmより大きい比抵抗で製造し得る。
In order to eliminate the disadvantages of the above technology when recycling HSR and high purity liquid crystal, the present invention provides a purification method suitable for large-scale plant purification of TFT liquid crystal and other liquid crystal having higher purity and SR value. Establish a series of technologies, including the following devices. Such liquid crystals are indicated for TFT liquid crystals that require metal impurity ions below 5 ppb and an SR higher than 10 13 Ωcm.
An object of the present invention is to provide a method for purifying an HSR liquid crystal. It combines inorganic salt absorption and electrophoresis methods to purify contaminated liquid crystals. Recycled liquid crystals can be manufactured with a resistivity greater than 10 13 Ωcm.
前記方法は下記の工程:汚染された液晶を無機塩と接触させて不純物を吸収する工程、無機塩によりその不純物を吸収させた液晶を濾過して低精製された液晶を得る工程、最後に前記低精製された液晶を電気泳動で処理して残存不純物を除去する工程を含む。前記無機塩吸収方法は溶媒を添加しないで常温で行なわれてもよい。
前記無機塩はアルミナ、シリカゲル、活性化アルミナ、ゼオライト、酸化チタン及びそれらの類似体からなる群から選ばれてもよい。
前記方法は1011Ωcmから1013Ωcmまでの範囲のSRを有する汚染された液晶を処理することが推奨される。
前記電気泳動方法は水と粒子の両方が除去されたアルゴン環境中で行なわれる。
本発明の別の目的は液晶を精製するための電気泳動装置を提供することである。前記装置は不活性ガス供給ユニット、脱水ユニット、脱粒子ユニット、電気泳動タンク、及び電源を含む。前記不活性ガス供給ユニットはアルゴンを供給することが好ましい。
前記電気泳動タンクは電気泳動容器組立体(これは複合電気泳動容器を含む)、容器ベース、及び電極板を電源に接続するための急速カプラーを含む。前記複合電気泳動容器は二つ以上の電極板、前記電極板を置くための電極ベース、及び前記電極板と電極ベースを置くための容器ボディを含む。
The method comprises the following steps: a step of bringing the contaminated liquid crystal into contact with an inorganic salt to absorb impurities; a step of filtering the liquid crystal having absorbed the impurity by the inorganic salt to obtain a low-purified liquid crystal; A step of treating the low-purified liquid crystal by electrophoresis to remove residual impurities. The inorganic salt absorption method may be performed at room temperature without adding a solvent.
The inorganic salt may be selected from the group consisting of alumina, silica gel, activated alumina, zeolite, titanium oxide and analogs thereof.
It is recommended that the method treat contaminated liquid crystals having an SR in the range of 10 11 Ωcm to 10 13 Ωcm.
The electrophoresis method is performed in an argon environment from which both water and particles have been removed.
Another object of the present invention is to provide an electrophoresis device for purifying liquid crystals. The apparatus includes an inert gas supply unit, a dehydration unit, a departicle unit, an electrophoresis tank, and a power supply. Preferably, the inert gas supply unit supplies argon.
The electrophoresis tank includes an electrophoresis container assembly (including a composite electrophoresis container), a container base, and a quick coupler for connecting the electrode plate to a power source. The composite electrophoresis container includes two or more electrode plates, an electrode base on which the electrode plate is placed, and a container body on which the electrode plate and the electrode base are placed.
前記電極板はアノードとカソードの両方について平行に置かれることが好ましい。前記電極ベースの数は多くの電極板を追加し、又は幾つかの電極板を取り外すために精製すべき液晶の量に従って必要とされる場合にはいつでも増加又は減少されてもよい。電極板は夫々について面積について制限されない。電極ベースは取り外し可能な型又は固定型のいずれであってもよい。
前記電極板は白金、ニッケル、銀、亜鉛、又はその他の材料からつくられてもよく、白金が好ましい。電極板は0.2〜1.0cmの距離で置かれることが好ましい。前記電極ベースと前記容器ボディの両方がテフロン(登録商標)製であることが好ましい。
本発明において明らかにされた精製方法は不純物を液晶から実質的に除去し、その適用について必要とされる仕様にマッチする液晶製品を製造する能力を有する。特開平8-277391号に明らかにされた上記技術(これは塩及び有機溶媒を添加し、次いで加熱し、撹拌することにより1〜3時間を要する精製方法を使用する)と較べて、本発明はほんの30分を要する塩吸収方法を使用する。電気泳動方法について、本発明はほんの3時間を要する電気泳動装置を使用し、特開2002-60752に明らかにされた特許請求された技術(これは電気泳動に17時間を費やすであろう)と比較し得る。加えて、その装置はこのような技術よりも極めて多い液晶を1サイクルで処理し得る。
上記説明により示されたように、本発明において明らかにされた比抵抗の高い液晶の精製方法及び装置は、それが精製に要する時間を大幅に短縮し、精製段階における清潔さの要件に取り組み、安全かつ容易な運転を提供する。更に重要なことに、本発明は大量プラント生産に適し、かつかなりの市場潜在性を提供する電気泳動装置を明らかにする。
Preferably, the electrode plates are placed in parallel for both the anode and the cathode. The number of electrode bases may be increased or decreased whenever needed according to the amount of liquid crystal to be refined to add more electrode plates or to remove some electrode plates. The electrode plates are not limited in area for each. The electrode base may be of a removable type or a fixed type.
The electrode plate may be made of platinum, nickel, silver, zinc, or other materials, with platinum being preferred. The electrode plates are preferably placed at a distance of 0.2-1.0 cm. It is preferable that both the electrode base and the container body are made of Teflon (registered trademark).
The purification method disclosed in the present invention has the ability to substantially remove impurities from liquid crystals and produce liquid crystal products that meet the required specifications for the application. Compared with the above technique disclosed in JP-A-8-277391 (which uses a purification method requiring 1-3 hours by adding a salt and an organic solvent, then heating and stirring), the present invention Uses a salt absorption method that takes only 30 minutes. For the electrophoresis method, the present invention uses an electrophoresis apparatus that takes only three hours, and uses the claimed technology disclosed in Japanese Patent Application Laid-Open No. 2002-60752 (which will spend 17 hours for electrophoresis). Can be compared. In addition, the device can process significantly more liquid crystals in one cycle than such techniques.
As indicated by the above description, the method and apparatus for refining a liquid crystal having a high specific resistance disclosed in the present invention greatly reduces the time required for refining, and addresses the requirement for cleanliness in the refining stage. Provide safe and easy driving. More importantly, the present invention reveals an electrophoresis apparatus that is suitable for mass plant production and offers considerable market potential.
本発明において明らかにされた電気泳動装置だけでなく、前記装置の特徴が以下に詳述される。図1は本発明において明らかにされた電気泳動装置の実施の一つを示す。その装置は鋼アルゴンシリンダー1、脱水ユニット2、脱粒子ユニット3、流量ターゲット管4、ニードル弁5、電気泳動タンク6、DC電源7、及びボール弁8を含む。本発明において明らかにされた電気泳動方法中に、アルゴンガスが推奨されるように50ml/分より大きい流量で前記鋼アルゴンシリンダー1から流出し、順に前記脱水ユニット2、脱粒子ユニット3、及び流量ターゲット管4中を通過して前記電気泳動タンク6に到達して、電気泳動操作が定常アルゴン雰囲気内にあることを保つ。
The features of the electrophoretic device as well as the electrophoretic device disclosed in the present invention will be described in detail below. FIG. 1 shows one embodiment of the electrophoresis apparatus disclosed in the present invention. The apparatus includes a
図2に示されるように、前記電気泳動タンク6の詳細な構造は電気泳動容器組立体9、アクリルボックス10、フィードスルー11、及びゴムシーリング12を含む。前記電気泳動タンク6は下記の利点を備えて設計される。電気泳動環境がアルゴンガスの導入流量を前記ニードル弁5で微細チューニングすること及びアルゴン出口及び入口の両方の位置決めだけでなく、前記ゴムシーリング12を使用することによる気密性、及び上部の前記ボール弁8を開けることによるサンプリングによりその浄化度について改善される。前記フィードスルー11(これは拡大金属ボックスに直接配置されてもよい)が使用されて外部電源を前記電気泳動タンク6に通じて安全な操作を高電圧下で確実にし、短絡を防止する。
図3は前記電気泳動組立体9の部分断面図を示し、その組立体は複合電気泳動容器13(これはテフロン(登録商標)製であることが好ましい)、アクリル容器ベース14、及び前記複合電気泳動容器13内の前記電極板16を外部電源に接続するための急速カプラー15を含む。
As shown in FIG. 2, the detailed structure of the electrophoresis tank 6 includes an electrophoresis container assembly 9, an
FIG. 3 shows a partial cross-sectional view of the electrophoresis assembly 9, which is a composite electrophoresis container 13 (preferably made of Teflon®), an
図4は前記複合電気泳動容器13の構造を示す。図4Aは複合電気泳動容器13の図を示し、この容器は容器ボディ17、電極ベース18、及び前記電極ベース18内に平行に置かれた一つより多い電極板16を含む。図4Bは前記電極ベース18が取り外し可能な型のものであることを示す。このような型のベースはごくわずかのクリアランスを有する前記電極板を洗浄する難点に取り組むために電極板16(その使用が完結される場合)が洗浄のために電極ベース18から取り外し可能である。しかしながら、前記電極ベース18は固定型で容器ボディ17に固定されてもよい。図4Cは前記複合電気泳動容器13の平面図を示す。見られるように、前記電極板16は二つの電極ベース18中の相当する溝19内に平行に置かれる。前記電極板16は溝19に入れられてもよく、またそれから取り外されてもよいので、板16の数は必要により増加又は減少されてもよい。加えて、電極板16の夫々は所望されるどのような面積でも設計し得る。
FIG. 4 shows the structure of the
図5は電極板16を電源に接続する急速カプラー15の平面図である。本発明において設計された急速カプラー15を使用することにより、電極板16が標準様式で迅速かつ容易に外部電源に接続し得る。加えて、前記カプラーはまたトリッピング及び短絡に関する関心を減じるのに理想的な導体の接触を確実にする。
特に、本発明において明らかにされた電気泳動容器13の実施の場合に基づいて、夫々について620cm2までの面積の白金電極板16がアルゴン環境(そこでは700Vまでの高電圧が適用される)中で夫々二つの隣接板間の0.2cmのクリアランスで電気泳動処理に使用される場合、夫々のサイクルについて130mlまで処理し得る液晶の量で、TFT液晶の純度要件に達するのにわずかに3時間しか要しない。加えて、電気泳動方法中の洗浄のために電極板を繰り返して取り外す必要はない。それ故、このような処理は大量生産に実質的に配置し得る。
本発明は塩吸収方法と電気泳動方法の両方を使用することにより、より高いSRを有するTFT液晶及びその他の液晶を実質的に精製するための特別な技術を包含する。その操作は以下のとおりである。
FIG. 5 is a plan view of the
In particular, based on the implementation of the
The present invention includes special techniques for substantially purifying TFT liquid crystals and other liquid crystals having higher SR by using both salt absorption and electrophoresis methods. The operation is as follows.
無機塩吸収方法
無機塩吸収方法では、液晶を10重量%のAC61(これは99.3%より多いアルミナを含む)と混合し、次いでその混合物を20分間撹拌する。撹拌が完結したら、その混合物を10分間放置し、次いで0.2μmのPTFEフィルターディスクで濾過し、精製された液晶を得る。
電気泳動精製方法
液晶に関する電気泳動精製方法は液晶が電極板(これらに高電圧(500〜1100V)が適用される)の間に入れられ、電界内のイオンの電気泳動効果の結果として、イオンを吸収し、液晶から電極の表面に分離することを意味する。電気泳動精製の操作は以下のとおりである。
Inorganic salt absorption method In the inorganic salt absorption method, the liquid crystal is mixed with 10% by weight of AC61, which contains more than 99.3% alumina, and then the mixture is stirred for 20 minutes. When the stirring is completed, the mixture is left for 10 minutes and then filtered through a 0.2 μm PTFE filter disc to obtain a purified liquid crystal.
Electrophoretic purification method The electrophoretic purification method for liquid crystal is that the liquid crystal is put between the electrode plates (these are applied with high voltage (500-1100V)) and the ions are separated as a result of the electrophoretic effect of the ions in the electric field. Absorption and separation from the liquid crystal to the surface of the electrode. The operation of electrophoretic purification is as follows.
1. アノードとカソードが交互になるように、白金電極板を電気泳動容器に入れる。
2. 電極板が沈められるまで電気泳動容器に汚染された液晶を入れる。
3. 電極容器を電気泳動タンクに移動させる。キャビネットにアルゴンガスを500cc/分の流量で少なくとも20分間にわたって入れる。
4. アルゴン流量を300cc/分までに調節する。電源を入れ、電圧を700Vに調節する。電気泳動処理を開始する。
5. 電気泳動方法中に、吸引ピペットを使用することにより或る量の精製されている液晶をサンプリングしてSR値を測定する。
6. SR値を試験して適している場合、電源をそのままにして液晶を貯蔵びんに排出してその後の物理的分析を促進する。
上記無機塩吸収方法及び電気泳動精製方法は別々に使用されてもよい。しかしながら、両方の方法が組み合わせて使用される場合、1013Ωcmより大きいSR値を有する精製された液晶を与えるのに最良の結果が期待できる。
幾つかの実施例を以下にし本発明の利点を実証するが、これらの実施例は本発明の特許請求の範囲を限定することを意図するものではない。
1. Place the platinum electrode plate in the electrophoresis container so that the anode and cathode alternate.
2. Fill the electrophoresis container with the contaminated liquid crystal until the electrode plate is submerged.
3. Move the electrode container to the electrophoresis tank. The cabinet is filled with argon gas at a flow rate of 500 cc / min for at least 20 minutes.
4. Adjust the argon flow up to 300cc / min. Turn on the power and adjust the voltage to 700V. Start electrophoresis.
5. During the electrophoresis method, a certain amount of the purified liquid crystal is sampled by using a suction pipette to measure the SR value.
6. Test the SR value and, if appropriate, leave the power supply on and drain the liquid crystal into a storage bottle to facilitate subsequent physical analysis.
The above inorganic salt absorption method and the electrophoretic purification method may be used separately. However, if both methods are used in combination, the best results can be expected to give purified liquid crystals with SR values greater than 10 13 Ωcm.
Some examples are set forth below to demonstrate the benefits of the present invention, but these examples are not intended to limit the scope of the invention.
例1
2.0x1011ΩcmのSR値を有する液晶の或る量を電気泳動方法で直接精製する。SR値は約6.0x1011Ωcmに改良されるにすぎない。あまりに多くの不純物が残存しているので、その精製は明らかな効果を示さず、また電気泳動精製から仕上げられた液晶は図6に示されるように必要とされる仕様に依然としてマッチし得ない。
Example 1
An amount of liquid crystal having an SR value of 2.0 × 10 11 Ωcm is purified directly by electrophoresis. The SR value is only improved to about 6.0 × 10 11 Ωcm. Because too many impurities remain, the purification has no apparent effect and the liquid crystal finished from the electrophoretic purification can still not meet the required specifications as shown in FIG.
例2
2.0x1011ΩcmのSR値を有する液晶の或る量をAC61精製方法で精製してSR値を7.0x1012Ωcmまで増大する。更なる電気泳動精製方法後に、その値は図7に示されるように3.8x1013Ωcmまで増大され、図中、“0”分の左の曲線の部分はAC61精製方法を示し、またその右の部分は電気泳動精製を示す。
Example 2
A certain amount of liquid crystal having an SR value of 2.0 × 10 11 Ωcm is purified by AC61 purification method to increase the SR value to 7.0 × 10 12 Ωcm. After the further electrophoresis purification method, the value was increased to 3.8 × 10 13 Ωcm as shown in FIG. 7, in which the left curve portion of “0” indicates the AC61 purification method, and Part indicates electrophoretic purification.
例3
既に3.0x1012ΩcmまでのSR値を有する液晶の或る量を電気泳動方法で直接精製する。図8中の曲線“A”で示されるように、SR値が3時間の終了時に3.3x1013Ωcmまで増大し、これは高純度を有する廃液晶が実質的に精製された液晶について本発明において明らかにされた電気泳動装置で直接精製し得ることを意味する。既に3.0x1012ΩcmまでのSR値を有するこのような型の液晶がAC61精製方法で精製される場合、その値は1.2x1013Ωcmまで増大するであろう。電気泳動方法が更なる精製のために使用される場合、その値は3.7x1013Ωcmまで増大するであろう。図8中の曲線“B”を参照のこと(“0”分の左の曲線の部分はAC61精製方法を示し、またその右の部分は電気泳動精製を示す)。AC61処理を使用しないで電気泳動精製で直接精製された液晶のSR値より高い、仕上げられた液晶のSR値は、本発明において明らかにされた電気泳動装置が、精製された液晶のSR値をTFT液晶のSR値近くにさえも増大する能力を有することを示している。
Example 3
A certain amount of liquid crystals already having an SR value of up to 3.0 × 10 12 Ωcm is directly purified by electrophoretic methods. As shown by the curve “A” in FIG. 8, the SR value increased to 3.3 × 10 13 Ωcm at the end of 3 hours, which indicates that the waste liquid crystal having high purity is substantially equal to the purified liquid crystal in the present invention. It means that it can be purified directly on the disclosed electrophoresis apparatus. If a liquid crystal of this type already having an SR value of up to 3.0 × 10 12 Ωcm is purified by the AC61 purification method, its value will increase to 1.2 × 10 13 Ωcm. If the electrophoresis method is used for further purification, the value will increase to 3.7 × 10 13 Ωcm. See curve “B” in FIG. 8 (the left curve portion for “0” indicates the AC61 purification method, and the right portion indicates electrophoretic purification). The SR value of the finished liquid crystal is higher than the SR value of the liquid crystal directly purified by electrophoretic purification without using the AC61 treatment, and the electrophoresis apparatus disclosed in the present invention is capable of increasing the SR value of the purified liquid crystal. It shows that it has the ability to increase even near the SR value of the TFT liquid crystal.
1−鋼アルゴンシリンダー
2−脱水ユニット
3−脱粒子ユニット
4−流量ターゲット管
5−ニードル弁
6−電気泳動タンク
7−DC電源
8−ボール弁
9−電気泳動容器組立体
10−アクリルボックス
11−フィールドスルー
12−ゴムシーリング
13−複合電気泳動容器
14−アクリル容器ベース
15−急速カプラー
16−電極板
17−容器ボディ
18−電極ベース
19−溝
1-Steel argon cylinder 2-Dehydration unit 3-Draining unit 4-Flow rate target tube 5-Needle valve 6-Electrophoresis tank 7-DC power supply 8-Ball valve 9-Electrophoresis container assembly 10-Acrylic box 11-Field Through 12-Rubber sealing 13-Composite electrophoresis container 14-Acrylic container base 15-Rapid coupler 16-Electrode plate 17-Container body 18-Electrode base 19-Groove
Claims (24)
汚染された液晶を無機塩と接触させる工程、
無機塩により吸収された液晶を濾過して低精製液晶を得る工程、及び
前記低精製液晶を電気泳動精製方法で精製して残存不純物を液晶から除去する工程。 A method for purifying a liquid crystal having a high specific resistance, comprising both a salt absorption method and an electrophoretic purification method, comprising the following steps:
Contacting the contaminated liquid crystal with an inorganic salt,
Filtering the liquid crystal absorbed by the inorganic salt to obtain a low-purity liquid crystal; and purifying the low-purity liquid crystal by an electrophoretic purification method to remove residual impurities from the liquid crystal.
水を前記ガスから除去するための脱水ユニット、
粒子を前記ガスから除去するための脱粒子ユニット、
電気泳動用の電気泳動タンク、及び
電圧を前記電気泳動タンクに適用して電気泳動を行なうための電源
を含むことを特徴とする液晶電気泳動精製装置。 An inert gas supply unit for supplying an inert gas to the electrophoresis environment,
A dehydration unit for removing water from said gas,
A departicle unit for removing particles from the gas,
An electrophoresis tank for electrophoresis, and a power supply for applying a voltage to the electrophoresis tank for performing electrophoresis, the liquid crystal electrophoresis purification apparatus.
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TW092113858A TWI297282B (en) | 2003-05-22 | 2003-05-22 | High performance purification process and device for high specific resistance liquid crystal |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7399426B2 (en) * | 2004-03-29 | 2008-07-15 | Dai Nippon Printing Co., Ltd. | Liquid crystalline organic semiconductor material and organic semiconductor structure using the same |
US9366261B2 (en) | 2012-01-18 | 2016-06-14 | Thoratec Corporation | Centrifugal pump device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7399426B2 (en) * | 2004-03-29 | 2008-07-15 | Dai Nippon Printing Co., Ltd. | Liquid crystalline organic semiconductor material and organic semiconductor structure using the same |
US9366261B2 (en) | 2012-01-18 | 2016-06-14 | Thoratec Corporation | Centrifugal pump device |
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TWI297282B (en) | 2008-06-01 |
JP4288125B2 (en) | 2009-07-01 |
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KR20040100815A (en) | 2004-12-02 |
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