JP2004318113A - Optical modulator - Google Patents

Optical modulator Download PDF

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JP2004318113A
JP2004318113A JP2004086896A JP2004086896A JP2004318113A JP 2004318113 A JP2004318113 A JP 2004318113A JP 2004086896 A JP2004086896 A JP 2004086896A JP 2004086896 A JP2004086896 A JP 2004086896A JP 2004318113 A JP2004318113 A JP 2004318113A
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signal
signal electrode
impedance
electrode
light modulation
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JP3669999B2 (en
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Tokuichi Miyazaki
Masataka Yokozawa
徳一 宮崎
政貴 横澤
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Sumitomo Osaka Cement Co Ltd
住友大阪セメント株式会社
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical modulator capable of improving electric characteristics and transmission characteristics by reducing characteristic impedance mismatching of an optical modulating element having a ridge part. <P>SOLUTION: The optical modulator having a substrate where a ridge part is formed, an optical waveguide formed at the ridge part, and a signal electrode 11 and a ground electrode 12 for modulating light passing in the optical waveguide is characterized in that the signal electrode is configured to have a signal introduction part up to the ridge part and an operation part for the ridge part and make the signal introduction part and operation part have the same impedance regarding the signal electrode or have an impedance matching line 10 formed between the both. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a light modulation element, and more particularly to a light modulation element using a substrate on which a ridge portion is formed.

In an optical communication system and optical applied measurement technology, an optical modulator, an optical switch, a polarization controller, or the like using a ferroelectric substance having an electro-optical effect, for example, a lithium niobate (LiNbO 3 ; hereinafter, referred to as LN) crystal. An optical modulation element that performs light modulation, switching, polarization control, and the like using an electric signal, such as described above, is used.
In the light modulation element, in order to achieve a lower driving voltage, a wider band, a higher speed, and the like, it is required to match characteristic impedance, match speed between microwaves and light waves, and reduce conductor loss of signal electrodes.

As an example of the optical modulation element, a Mach-Zehnder (hereinafter, referred to as MZ) type optical modulator will be described.
As shown in FIG. 1, in the MZ type optical modulator, optical waveguides 2, 3, and 4 are formed on a LN substrate 1 by thermally diffusing a high refractive index material such as Ti. A buffer layer (not shown) made of dielectric SiO 2 or the like is provided on the substrate on which the optical waveguide is formed, and a signal electrode 5 and ground electrodes 6, 6 ′ are formed on the buffer layer.
The light incident on the input optical waveguide 2 is divided into two equal parts by the Y-shaped branch optical waveguide, propagates through the two optical waveguides 3, is multiplexed by the other Y-shaped branch waveguides, and is output by the output optical waveguide. It is configured to emit the modulated light to the outside via the wave path 4. Then, a modulation signal by a microwave is applied to the signal electrode 5, and light passing through the optical waveguide 3 is modulated by an electric field formed by the signal electrode 5 and the ground electrodes 6, 6 ′.

FIG. 2 shows a cross section taken along dashed line A in FIG. For example, as shown in the following Patent Document 1, the optical waveguide 3 is formed in the ridge portion 8. The ridge portion is formed by eroding or cutting the substrate 1 by etching or sandblasting to form a groove on the substrate. Reference numeral 7 denotes a buffer layer.
In the light modulation element having such a ridge portion, an electric field formed by the signal electrode and the ground electrode can be efficiently applied to a light wave propagating through the optical waveguide formed in the ridge portion. It is known that it contributes to driving voltage.
Then, the characteristic impedance of the signal electrode is set to an appropriate value, and the effective refractive index of the microwave is adapted to the effective refractive index of light propagating through the optical waveguide, and the value of the microwave attenuation constant of the signal electrode is suppressed. In addition, a high-speed and wide-band modulation operation can be performed at a low voltage.
JP-A-10-90638

However, since the ridge portion as described above is formed particularly in the modulation region in the optical waveguide 3, as shown in FIG. 6, the signal electrode 5 has a ridge portion formed by a groove 9 and a region where no ridge portion is formed. Wiring is performed to both of the formed modulation regions. Since the impedance related to the signal electrode 5 is different between the ridge portion and the other region with respect to the dotted line B, the electrical characteristics such as the reflection characteristics of the electrode deteriorate at the entrance or the exit of the ridge portion in the signal electrode. . Then, multiple reflection of the modulation signal occurs in the signal electrode, the electric signal waveform changes, and the transmission characteristics of the optical modulation element deteriorate.
Further, since the microwave does not efficiently propagate to the signal electrode of the ridge portion due to the impedance mismatch, there has been a problem in that the drive voltage for light modulation increases.

  SUMMARY OF THE INVENTION The problem to be solved by the present invention is to solve the above-mentioned problems, to reduce the characteristic impedance mismatch in an optical modulation element having a ridge portion, to improve the electrical characteristics, and to further improve the transmission characteristics. It is to provide an element.

  In order to solve the above problem, according to the first aspect of the present invention, a substrate on which a ridge is formed, an optical waveguide formed on the ridge, and a signal for modulating light passing through the optical waveguide. In a light modulation element having an electrode and a ground electrode, the signal electrode has a signal introducing portion up to the ridge portion and an operating portion of the ridge portion, and the impedance related to the signal electrode is the signal introducing portion. It is characterized in that it is configured to coincide with the action part.

  Further, in the invention according to claim 2, in the optical modulation element according to claim 1, in order to make the impedances match, the ratio between the width of the signal electrode and the distance between the signal electrode and the ground electrode is set. The adjustment is performed between the signal introduction unit and the operation unit.

  According to a third aspect of the present invention, in the light modulating element according to any one of the first and second aspects, the permittivity of the substrate near the signal electrode is changed by adjusting the permittivity of the signal introduction section so that the impedance is matched. It is characterized in that adjustment is made between the action section and the action section.

  In the invention according to claim 4, in the light modulation element according to claim 3, the adjustment of the dielectric constant is performed by adjusting the depth of a groove formed on the substrate between the signal electrode and the ground electrode. It is characterized by being.

  According to a fifth aspect of the present invention, in the optical modulation device according to any one of the first to fourth aspects, the configuration for matching the impedance is such that a continuous signal is provided between the signal introduction unit and the operation unit. Characteristically or stepwisely.

  In the invention according to claim 6, the substrate on which the ridge portion is formed, the optical waveguide formed on the ridge portion, and the signal electrode and the ground electrode for modulating light passing through the optical waveguide are formed. In the optical modulation device having the signal electrode, the signal electrode has a signal introducing portion up to the ridge portion and an operating portion near the ridge portion, and the signal electrode is provided between the signal introducing portion and the operating portion. It is characterized in that an impedance matching line is formed.

  In the invention according to claim 7, in the optical modulation element according to claim 6, the impedance of the impedance matching line is set by a ratio of a width of the signal electrode to a distance between the signal electrode and a ground electrode. The adjustment is performed by adjusting.

  In the invention according to claim 8, in the optical modulation element according to claim 6 or 7, the impedance of the impedance matching line is set by a groove formed on a substrate between the signal electrode and the ground electrode. The depth is adjusted by adjusting the depth.

  According to a ninth aspect of the present invention, in the optical modulation device according to any one of the sixth to eighth aspects, the setting of the impedance of the impedance matching line is performed continuously between the signal introduction unit and the operation unit. Characteristically or stepwisely.

  According to a tenth aspect of the present invention, in the optical modulator according to any one of the first to ninth aspects, a delay line portion is provided in a part of the signal introduction portion of the signal electrode, and the delay line portion and the delay line portion are provided. It is characterized in that the impedance of the signal electrode before or after the line portion is adjusted.

  According to the first aspect of the present invention, since the impedance of the signal electrode matches the impedance of the signal introduction part and the operation part, the reflection of the microwave that is the modulation signal at the entrance of the operation part is reduced, and the efficiency is improved. Microwaves can be propagated to the working part of the signal electrode.

According to the second aspect of the present invention, the capacitance between the electrodes is changed by changing the ratio between the width of the signal electrode and the distance between the signal electrode and the ground electrode. In addition, the impedance of the signal electrode can be easily adjusted.
In the ridge portion, since a groove is formed on the substrate and the capacitance is reduced, it is desirable to increase the capacitance by reducing the distance between the electrodes.
In addition, the width of the signal electrode and the distance between the signal electrode and the ground electrode can be easily adjusted only by changing the electrode formation pattern in photolithography and the position of the groove on the substrate, which complicates the manufacturing process. And there is no increase in manufacturing cost.

According to the third aspect of the present invention, since the dielectric constant of the substrate near the signal electrode affects the impedance of the signal electrode, the impedance can be easily adjusted by changing the dielectric constant. It becomes.
As a method for adjusting the dielectric constant, there is a method of diffusing a substance having a dielectric constant characteristic different from that of the substrate into the substrate. Specifically, a method of doping a high dielectric constant material below the optical waveguide formed in the ridge portion or in the substrate between the signal electrode and the ground electrode, or a low dielectric constant And a method of doping the material.

According to the invention of claim 4, by changing the depth of the groove formed on the substrate, it is possible to change the dielectric constant and easily adjust the impedance.
Moreover, since the depth of the substrate can be easily controlled by adjusting the location or time of erosion or cutting by etching or sandblasting, the manufacturing process is not complicated, and the manufacturing cost does not increase. .

  According to the fifth aspect of the present invention, when adjusting the width of the signal electrode, the distance between the signal electrode and the ground electrode, the permittivity, the depth of the substrate, or the like, the impedance is made to be continuous. Alternatively, it is possible to further suppress the reflection of the modulation signal by changing it stepwise.

According to the sixth aspect of the present invention, even when the impedance of the signal electrode is mismatched between the signal introducing section and the action section, the impedance matching line is formed at the junction between the two, so that the signal The microwave input from the unit side can be efficiently propagated to the working unit because the reflection of the microwave is reduced by the impedance matching line.
In addition, since the impedance matching line is provided, the impedance of the signal electrode in the action section is not limited to 50Ω which is usually used, and an appropriate value according to various designs can be selected.

  According to the invention of claim 7, when forming the signal electrode and the ground electrode in the manufacturing process of the light modulation element, the ratio between the width of the signal electrode and the distance between the signal electrode and the ground electrode is adjusted in the impedance matching line. Thus, since the impedance matching line can be easily formed, it is possible to easily manufacture the light modulation element without changing the manufacturing process of the conventional light modulation element.

According to the invention according to claim 8, since the depth of the groove forming the ridge portion is gradually changed between the signal introducing portion and the acting portion, the impedance of the signal electrode can be smoothly changed. it can.
As a method for forming such a groove, it is possible to form the groove on the substrate by gradually changing the location to be eroded or cut by etching or sandblasting when forming the groove on the substrate.

  According to the ninth aspect of the present invention, it is possible to smoothly or continuously or stepwise change the impedance of the signal electrode in the impedance matching line, and to more effectively suppress the reflection of the modulation signal.

  According to the tenth aspect of the present invention, since the delay line portion is provided in the signal electrode, even when the line length of the signal electrode is increased and impedance mismatch occurs, the impedance is adjusted in the delay line portion to adjust the impedance. It is possible to prevent the modulation signal applied to the signal electrode from being reflected by the delay line section.

Hereinafter, the present invention will be described in detail using preferred examples.
As a substrate constituting the light modulation element, a material having an electro-optic effect, for example, lithium niobate (LiNbO 3 ; hereinafter, referred to as LN), lithium tantalate (LiTaO 3 ), PLZT (lead lanthanum zirconate titanate), And a solid solution crystal composed of LiNbO 3 crystal, LiTaO 3 crystal, or LiNbO 3 and LiTaO 3 , which is composed of a silica-based material and is particularly easy to configure as an optical waveguide device and has a large anisotropy. Is preferred. In this embodiment, an example using lithium niobate (LN) will be mainly described.
In the following, a description will be given centering on a substrate having a direction of a crystal axis in which a refractive index can be changed most efficiently by an electro-optic effect in a direction perpendicular to the surface (a so-called “Z-cut substrate”). It is not limited to the substrate. Therefore, it goes without saying that the positional relationship between the signal electrode and the ground electrode with respect to the optical waveguide such as the branch waveguide is also changed according to the type of the substrate.

As a method of manufacturing the light modulation element, a groove is formed on the substrate by eroding or cutting the surface of the LN substrate by etching or sandblasting or the like.
Next, an optical waveguide is formed by thermally diffusing Ti on the LN substrate (including the ridge portion), and then an electrode is directly formed on the LN substrate without providing a buffer layer over a part or the whole of the substrate. In order to reduce the propagation loss of light in the optical waveguide, a buffer layer such as a dielectric SiO 2 is provided on the LN substrate, and a Ti / Au electrode pattern is formed thereon, and a gold plating method is used. There is a method of forming a signal electrode and a ground electrode having a height of 10 μm and indirectly forming the electrodes.
It is also possible to adopt a multilayer structure in which a film body such as SiN or Si is provided on the buffer layer.
In general, a plurality of light modulation elements are formed on one LN wafer, and the light modulation elements are finally cut into individual light modulation element chips, thereby manufacturing light modulation elements.

The light modulation element to which the present invention is applied has a ridge portion on the substrate surface as described above, and since the ridge portion is present, a signal introducing portion up to the ridge portion and an action portion of the ridge portion And have different impedances related to the signal electrodes.
Generally, the impedance related to the signal electrode is higher in the operating portion than in the signal introducing portion due to the influence of the ridge portion.
A first object of the present invention is to achieve impedance matching between a signal electrode in a signal introducing section and a signal electrode in an operating section in order to eliminate such impedance mismatching.

  Methods for adjusting the impedance include a method of changing the capacitance between the signal electrode and the ground electrode, and a method of changing the dielectric constant of the substrate on which the signal electrode is formed. Then, it is possible to more effectively suppress the reflection of the modulation signal by making the change smoothly and continuously or stepwise, rather than making the change discontinuously.

A method for changing the capacitance between the signal electrode and the ground electrode will be described.
The capacitance generated between the signal electrode and the ground electrode changes depending on the distance between each electrode. For this reason, in order to lower the impedance, it is necessary to increase the capacitance on the contrary, so that the distance between the electrodes may be reduced.
For example, as shown in FIG. 7, since the groove 33 is formed on the right side of the dotted line B, the distance between the signal electrode 31 and the ground electrode 32 is reduced to reduce impedance. On the other hand, as shown in FIG. 8, on the left side of the dotted line B, the distance between the signal electrode 41 and the ground electrode 42 is configured to be long in order to increase the impedance. 43 indicates a groove.

A method for changing the dielectric constant of the substrate on which the signal electrode is formed will be described.
When the dielectric constant of the substrate changes, most of the modulation electric field formed by the signal electrode passes through the inside of the substrate, so that the capacitance changes. In order to reduce the capacitance, it is necessary to reduce the dielectric constant of the material in the substrate through which the modulated electric field passes.
In order to change the dielectric constant of the substrate, for example, the substrate below or around the place where the optical waveguide of the ridge portion is formed is replaced with a substrate having a dielectric constant higher than that of the substrate material. As a place to be replaced, there is a method in which the entire lower portion of the substrate is made of a high dielectric constant material, or a method in which a region in which a modulation electric field formed by the signal electrode passes is replaced with a high dielectric constant material.

Further, the impedance of the signal electrode can be adjusted by replacing the substrate region where the signal introduction portion of the signal electrode is formed with a material having a lower dielectric constant than the substrate material. Note that the dielectric constant can be reduced by reducing the thickness of the substrate relative to the substrate region where the signal introduction portion of the signal electrode is formed.
These dielectric constants can be changed by doping the LN substrate with a material having a low dielectric constant, such as MgO, or by removing a predetermined region of the substrate by etching or mechanical polishing (such as a sand blast method or a cutting method). To form a depression and fill the depression with another dielectric material.

A second object of the present invention is to smoothly join signal electrodes having different impedances between a signal introduction unit and an operation unit via an impedance matching line.
Impedance value Z of the impedance matching line is the impedance value Z 1 of the signal electrodes of the signal introduction, by setting a value between the impedance value Z 2 of the signal electrode of the working portion, the micro by different impedances of the signal electrodes It suppresses wave reflection.
Preferably, a value represented by the formula Z = (Z 1 × Z 2 ) 1/2 or a value that smoothly changes the value between Z 1 and Z 2 is set, and It is desirable to set the effective length at high frequency to 1 / wavelength of the signal. Further, the matching line section may be a multi-stage conversion section.

As a method of setting the impedance value of the impedance matching line to a predetermined value, it is also possible to adjust the line width of the signal electrode. In this case, by adjusting the mask pattern when forming the signal electrode. Thus, an impedance matching line can be easily formed.
Further, as shown in FIG. 3, it is also possible to form an impedance matching line by changing the interval between the signal electrode 11 and the ground electrode 12 from the interval a to the interval b in a tapered shape like 10. Incidentally, reference numeral 13 in FIG. 3 indicates the position of the groove for forming the ridge portion.

Further, as the impedance matching line, a method of changing the line width of the signal electrode and a method of changing the distance between the signal electrode and the ground electrode can be used in combination as shown in FIG. In FIG. 4, the line width of the signal electrode is changed from the width c to the width d, and the interval between the signal electrode and the ground electrode is continuously changed from the interval e to the interval f.
Note that the shape of the impedance matching line is not limited to the shape that is continuously changed as described above, and may be changed stepwise in a stepwise manner.

As another example of the impedance matching line, the impedance matching line can be formed by adjusting the depth of a groove formed on the substrate between the signal electrode and the ground electrode.
For example, as shown in FIG. 5, by forming the depth of the groove to be gradually reduced in the vicinity 20 of the end of the groove 23 formed beside the ridge portion, the impedance of the signal electrode 21 is continuously reduced. It becomes possible to change it. Note that reference numeral 22 in FIG. 5 indicates a ground electrode.
As a method for forming such a groove, it is possible to form the groove on the substrate by gradually changing the location to be eroded or cut by etching or sandblasting when forming the groove on the substrate.

For example, in a dual-type light modulation element having two signal electrodes, each signal electrode is provided with a delay line portion for adjusting the phase of a microwave propagating through the action section. As described above, when the delay line portion is formed, the signal introduction portion of the signal electrode becomes long, and thus is easily affected by impedance mismatch.
For this reason, as shown in FIG. 9, it is desirable to adjust the impedance of the delay line portion 51 ′ to match the impedance of the signal electrode before or after the delay line portion. Reference numeral 56 denotes a groove.
As the impedance matching method, the method of performing impedance adjustment as described above or the method of providing an impedance matching line can be used. In FIG. 9, the impedance matching line is formed by changing the interval between the signal electrode 51 and the ground electrodes 53 and 54 into a tapered shape in the region indicated by the dotted line C, as in the case shown in FIG. . If necessary, the impedance matching line can be formed between the signal electrode 52 and the ground electrodes 54 and 55 as well.
As described above, by performing impedance matching in the delay line unit, it is possible to suppress the microwave applied to the signal electrode from being reflected and attenuated in the delay line unit.

  As described above, according to the present invention, it is possible to provide an optical modulation element in which characteristic impedance mismatch in an optical modulation element having a ridge portion is reduced, electric characteristics are improved, and transmission characteristics are further improved. It becomes.

It is a perspective view of a Mach-Zehnder type light modulation element. It is sectional drawing of the light modulation element shown in FIG. FIG. 4 is a diagram illustrating an example of an impedance matching line using a distance between electrodes. It is a figure showing an example of an impedance matching line using the line width of an electrode, and the interval between electrodes. FIG. 4 is a diagram illustrating an example of an impedance matching line using the depth of a groove in a substrate. It is a figure showing the state of the electrode near the conventional ridge part. FIG. 9 is a diagram illustrating an example in which impedance is matched using the distance between electrodes. FIG. 11 is a diagram illustrating another example in which impedance is matched using the distance between electrodes. FIG. 3 is a diagram illustrating a state of an electrode near a delay line portion and a ridge portion.

Explanation of reference numerals

DESCRIPTION OF SYMBOLS 1 Substrate 2,3,4 Optical waveguide 5,11,21 Signal electrode 6,12,22 Ground electrode 7 Buffer layer 8 Ridge part 13,23 Groove 51 'Delay line part

Claims (10)

  1. A substrate on which the ridge is formed, an optical waveguide formed on the ridge, and a light modulation element having a signal electrode and a ground electrode for modulating light passing through the optical waveguide;
    The signal electrode has a signal introducing portion up to the ridge portion and an operating portion of the ridge portion, and is configured such that impedance related to the signal electrode is matched between the signal introducing portion and the operating portion. A light modulation element characterized by the above-mentioned.
  2.   2. The light modulation device according to claim 1, wherein the width of the signal electrode and the ratio of the distance between the signal electrode and the ground electrode are set to match the impedance. A light modulation element, wherein the light modulation element is adjusted between the above.
  3.   3. The light modulation device according to claim 1, wherein a permittivity of a substrate near the signal electrode is adjusted between the signal introduction unit and the operation unit to match the impedance. A light modulation element, comprising:
  4.   4. The light modulation device according to claim 3, wherein the adjustment of the dielectric constant is an adjustment of a depth of a groove formed on the substrate between the signal electrode and the ground electrode. .
  5.   5. The optical modulation device according to claim 1, wherein a configuration for matching the impedance changes continuously or stepwise between the signal introduction unit and the operation unit. 6. A light modulation element characterized by the above-mentioned.
  6. A substrate on which the ridge is formed, an optical waveguide formed on the ridge, and a light modulation element having a signal electrode and a ground electrode for modulating light passing through the optical waveguide;
    The signal electrode has a signal introducing portion up to the ridge portion and an operating portion near the ridge portion, and forms an impedance matching line related to the signal electrode between the signal introducing portion and the operating portion. A light modulation element, comprising:
  7.   7. The optical modulation device according to claim 6, wherein the setting of the impedance of the impedance matching line is performed by adjusting a ratio between a width of the signal electrode and a distance between the signal electrode and a ground electrode. Light modulation element.
  8.   8. The optical modulation device according to claim 6, wherein the setting of the impedance of the impedance matching line is performed by adjusting a depth of a groove formed on the substrate between the signal electrode and the ground electrode. A light modulation element characterized by the above-mentioned.
  9.   9. The optical modulation device according to claim 6, wherein the setting of the impedance of the impedance matching line changes continuously or stepwise between the signal introduction unit and the operation unit. A light modulation element characterized by the above-mentioned.
  10. The optical modulation device according to claim 1, wherein a delay line portion is provided in a part of a signal introduction portion of the signal electrode, and a signal electrode is provided before or after the delay line portion. A light modulation element that adjusts impedance according to (1).
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Cited By (9)

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WO2005111703A1 (en) * 2004-05-18 2005-11-24 Ngk Insulators, Ltd. Optical waveguide device
JP2009048087A (en) * 2007-08-22 2009-03-05 Anritsu Corp Optical modulator
WO2009041469A1 (en) * 2007-09-28 2009-04-02 Sumitomo Osaka Cement Co., Ltd. Optical waveguide type modulator
WO2010001986A1 (en) * 2008-07-04 2010-01-07 住友大阪セメント株式会社 Optical waveguide element module
JP2010032690A (en) * 2008-07-28 2010-02-12 Anritsu Corp Optical modulator
WO2010021193A1 (en) * 2008-08-22 2010-02-25 日本碍子株式会社 Optical modulator
JP2010072129A (en) * 2008-09-17 2010-04-02 Fujitsu Ltd Electronic device
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WO2005111703A1 (en) * 2004-05-18 2005-11-24 Ngk Insulators, Ltd. Optical waveguide device
US7319800B2 (en) 2004-05-18 2008-01-15 Ngk Insulators, Ltd. Optical waveguide device
JP2009048087A (en) * 2007-08-22 2009-03-05 Anritsu Corp Optical modulator
JP4671993B2 (en) * 2007-08-22 2011-04-20 アンリツ株式会社 Light modulator
WO2009041469A1 (en) * 2007-09-28 2009-04-02 Sumitomo Osaka Cement Co., Ltd. Optical waveguide type modulator
JP2009086065A (en) * 2007-09-28 2009-04-23 Sumitomo Osaka Cement Co Ltd Optical waveguide modulator
JP4544479B2 (en) * 2007-09-28 2010-09-15 住友大阪セメント株式会社 Optical waveguide modulator
US8792752B2 (en) 2008-07-04 2014-07-29 Sumitomo Osaka Cement Co., Ltd. Optical waveguide element module
US20110135241A1 (en) * 2008-07-04 2011-06-09 Sumitomo Osaka Cement Co., Ltd. Optical waveguide element module
JP2010060580A (en) * 2008-07-04 2010-03-18 Sumitomo Osaka Cement Co Ltd Optical waveguide element module
CN102067016A (en) * 2008-07-04 2011-05-18 住友大阪水泥股份有限公司 Optical waveguide element module
WO2010001986A1 (en) * 2008-07-04 2010-01-07 住友大阪セメント株式会社 Optical waveguide element module
JP4599434B2 (en) * 2008-07-04 2010-12-15 住友大阪セメント株式会社 Optical waveguide device module
JP2010032690A (en) * 2008-07-28 2010-02-12 Anritsu Corp Optical modulator
US8411349B2 (en) 2008-08-22 2013-04-02 Ngk Insulators, Ltd. Optical modulator
WO2010021193A1 (en) * 2008-08-22 2010-02-25 日本碍子株式会社 Optical modulator
JPWO2010021193A1 (en) * 2008-08-22 2012-01-26 日本碍子株式会社 Light modulator
JP2010072129A (en) * 2008-09-17 2010-04-02 Fujitsu Ltd Electronic device
US8526768B2 (en) 2009-03-31 2013-09-03 Sumitomo Osaka Cement Co., Ltd. Light control device
CN101852967A (en) * 2009-03-31 2010-10-06 住友大阪水泥股份有限公司 Light control device
JP2010237615A (en) * 2009-03-31 2010-10-21 Sumitomo Osaka Cement Co Ltd Light control device
CN101852967B (en) * 2009-03-31 2016-01-06 住友大阪水泥股份有限公司 Light control device
US20120301070A1 (en) * 2009-09-25 2012-11-29 Sumitomo Osaka Cement Co., Ltd. Optical Waveguide Element Module
JP2011070026A (en) * 2009-09-25 2011-04-07 Sumitomo Osaka Cement Co Ltd Optical waveguide element module
US8774566B2 (en) 2009-09-25 2014-07-08 Sumitomo Osaka Cement Co., Ltd. Optical waveguide element module
WO2011037171A1 (en) * 2009-09-25 2011-03-31 住友大阪セメント株式会社 Optical waveguide element module

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