JP2004311744A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
JP2004311744A
JP2004311744A JP2003103801A JP2003103801A JP2004311744A JP 2004311744 A JP2004311744 A JP 2004311744A JP 2003103801 A JP2003103801 A JP 2003103801A JP 2003103801 A JP2003103801 A JP 2003103801A JP 2004311744 A JP2004311744 A JP 2004311744A
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JP
Japan
Prior art keywords
wafer
adhesive
semiconductor wafer
back surface
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2003103801A
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Japanese (ja)
Inventor
Kunihiko Tsubota
邦彦 坪田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP2003103801A priority Critical patent/JP2004311744A/en
Publication of JP2004311744A publication Critical patent/JP2004311744A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To solve such a problem that, when manufacturing a semiconductor device, a number of through holes 4 are formed in a wafer supporting substrate 1 and various processing liquids for treatment of rear surface enter them, resulting in reduction of adhesion. <P>SOLUTION: The method for manufacturing a semiconductor device includes an adhesion step wherein the wafer supporting substrate 1 having a number of through holes 4 is joined with a semiconductor wafer 3 by means of an adhesive 2, a rear surface treatment step, and a peeling step where the adhesive 2 is dissolved by a solvent 5 for peeling to peel off the semiconductor wafer 3 from the wafer supporting substrate 1. In this method, a film 101 is formed inside the through hole 4 prior to the rear surface treatment, and various processing liquids are prevented from entering through the through holes 4 during the rear surface treatment. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は半導体装置の製造方法に関し、特に半導体ウェーハの裏面加工プロセスに関する。
【0002】
【従来の技術】
例えば、GaAsなどの化合物で成る半導体ウェーハの場合、半導体ウェーハ表面に素子を形成した後、熱抵抗を低減するために半導体ウェーハの裏面側から、その厚さを極めて薄く研磨するが、これによって機械的強度が低下し、半導体ウェーハが工程中のストレスで割れるのを防止するため、予め、剛性を有する石英やガラスなどで成るウェーハ支持基板に粘着剤で貼付けて加工する。
【0003】
従来の半導体装置の製造方法の一例を図3,図4に示す。図3は、工程順を示す断面図であり、図4は、ウェーハ支持基板の平面図および断面図である。
【0004】
従来の半導体装置の製造方法は、先ず、図3(a)に示すように、ガラスで成るウェーハ支持基板1に粘着剤2を介して半導体ウェーハ3を貼付ける。貼付手順は、半導体ウェーハ3の表面3aに粘着剤2を塗布し、ウェーハ支持基板1に、その塗布面を加熱しながら押付けて、半導体ウェーハ3の裏面3bが露呈するように貼付ける。
【0005】
ここで、粘着剤2は、例えば、アクリル系の粘着剤,フォトレジスト,ワックスなどで、剥離の際には、剥離用の溶剤として、メチルエチルケトンやアセトンやイソプロピルアルコールなどの有機溶剤などで溶解させる。尚、上記では、粘着剤2を半導体ウェーハ3側に塗布することで説明したが、ウェーハ支持基板1側に塗布する方法でもよく、両方に塗布する方法でもよい。
【0006】
また、図4に示すように、ウェーハ支持基板1には、多数の貫通穴4(直径数百μm程度)が設けられている。この貫通穴4を設ける目的は、半導体ウェーハ3とウェーハ支持基板1とを貼付ける際に生じる気泡を逃がすためと、剥離の際に剥離用の溶剤が、この貫通穴4を通して浸入し粘着剤2を溶解しやすくするためである。
【0007】
次に、図3(b)に示すように、半導体ウェーハ3の裏面3bを裏面研磨装置(図示せず)で所望の厚さになるように薄く研磨した後(図中、研磨部分を一点鎖線で示す)、例えば、フォトリソグラフィ技術を用いて、半導体ウェーハ3の裏面3b側から表面3a側に貫通するビアホール(図示せず)を形成したり、酸処理(前処理)後、真空蒸着法などで所定の金属膜(図示せず)の形成をしたりするなどの裏面処理を施す。
【0008】
次に、裏面処理が完了したら、図3(c)に示すように、ウェーハ支持基板1と半導体ウェーハ3との接合体を、剥離用の溶剤5(例えば、メチルエチルケトンやアセトンやイソプロピルアルコールなどの有機溶剤)に浸漬し、粘着剤2を溶解しウェーハ支持基板1と半導体ウェーハ3とを剥離させる。ここで、剥離用の溶剤5は、半導体ウェーハ3の外周部から浸入することに加えて、ウェーハ支持基板1に設けられた多数の貫通穴4を通して浸入するため、粘着剤2の溶解速度をより速めることができる。(例えば、特許文献1)
【0009】
このように、予め、半導体ウェーハ3をウェーハ支持基板1に貼付けて裏面処理すると、半導体ウェーハ3の厚みが薄くなって機械的強度が低下しても、工程中のストレスで半導体ウェーハ3が割れるのを防止できる。
【0010】
【特許文献1】
特開2002−184845号公報 (第2頁、0003〜0005段落,図5)
【0011】
【発明が解決しようとする課題】
しかし、上述の半導体装置の製造方法では、ウェーハ支持基板1に多数の貫通穴4が設けられているため、例えば、裏面処理として、フォトリソグラフィやエッチング処理、あるいは、洗浄作業などを施す際に、各作業で使用する有機溶剤や酸などの種々の処理液が貫通穴4を通して浸入し、粘着剤2を溶解し、ウェーハ支持基板1と半導体ウェーハ3とを剥離させ、その結果、半導体ウェーハ3が破損すると言う問題があった。
【0012】
本発明の目的は、裏面処理中に使用する有機溶剤や酸などの種々の処理液が、ウェーハ支持基板の貫通穴を通して浸入し、ウェーハ支持基板と半導体ウェーハとを貼付けている粘着剤を溶解させることのない半導体装置の製造方法を提供することである。
【0013】
【課題を解決するための手段】
本発明の半導体装置の製造方法は、
多数の貫通穴を有するウェーハ支持基板と半導体ウェーハとを粘着剤を介して貼付ける貼付工程と、
半導体ウェーハの裏面に所定の裏面処理を施す裏面処理工程と、
粘着剤を溶解する剥離用の溶剤で粘着剤を溶解させ、ウェーハ支持基板と半導体ウェーハとを剥離する剥離工程とを含む半導体装置の製造方法において、
裏面処理工程の前に、貫通穴内部に被膜を形成し、裏面処理工程中に貫通穴を通して粘着剤を溶解させる各種の処理液が浸入することを防止することを特徴とする半導体装置の製造方法である。
【0014】
【発明の実施の形態】
本発明の半導体装置の製造方法の一例を図1,図2に示す。図1,図2は、工程順を示す断面図である。尚、図3,図4と同一部分には同一符号を付す。
【0015】
本発明の半導体装置の製造方法は、先ず、図1(a)に示すように、ガラスで成るウェーハ支持基板1に粘着剤2を介して半導体ウェーハ3を貼付ける。貼付手順は、半導体ウェーハ3の表面3aに粘着剤2を塗布し、ウェーハ支持基板1に、その塗布面を加熱しながら押付けて、半導体ウェーハ3の裏面3bが露呈するように貼付ける。
【0016】
ここで、粘着剤2は、例えば、アクリル系の粘着剤,フォトレジスト,ワックスなどで、剥離の際には、剥離用の溶剤として、メチルエチルケトンやアセトンやイソプロピルアルコールなどの有機溶剤などで溶解させる。尚、上記では、粘着剤2を半導体ウェーハ3側に塗布することで説明したが、ウェーハ支持基板1側に塗布する方法でもよく、両方に塗布する方法でもよい。
【0017】
また、図4に示すように、ウェーハ支持基板1には、多数の貫通穴4(直径数百μm程度)が設けられている。この貫通穴4を設ける目的は、半導体ウェーハ3とウェーハ支持基板1とを貼付ける際に生じる気泡を逃がすためと、剥離の際に剥離用の溶剤が、この貫通穴4を通して浸入し粘着剤2を溶解しやすくするためである。
【0018】
次に、図1(b)に示すように、本発明の特徴である製造方法として、ウェーハ支持基板1裏面および貫通穴4内部に、例えば、タングステンシリサイド(WSi)で成る厚さ2μmの被膜101をスパッタ法で形成する。この被膜101を形成する目的は、裏面処理工程中で使用する種々の処理液が、貫通穴4を通して浸入し、ウェーハ支持基板1と半導体ウェーハ3とを貼付けている粘着剤2を溶解し接着力を低下させることを防止するためである。ここで、被膜101としてタングステンシリサイド(WSi)を用いると、耐有機溶剤性、耐酸性に優れており好適である。また、タングステンシリサイド(WSi)は、機械的強度や耐熱性にも優れているため被膜としての厚さは、少なくとも、1μm以上あればよく、後工程での除去のしやすさを考慮すると薄い方がよく、2μm±1μmが好適である。
【0019】
次に、図2(c)に示すように、半導体ウェーハ3の裏面3bを裏面研磨装置(図示せず)で所望の厚さになるように薄く研磨した後(図中、研磨部分を一点鎖線で示す)、例えば、フォトリソグラフィ技術を用いて、半導体ウェーハ3の裏面3bから表面3aに貫通するビアホール(図示せず)を形成したり、前処理として酸処理した後、真空蒸着法などで所定の金属膜(図示せず)の形成をしたりするなどの裏面処理を施す。
【0020】
このとき、ウェーハ支持基板1裏面および貫通穴4内部には、タングステンシリサイド(WSi)の被膜101が形成されているため、各種の処理液が貫通穴4を通して浸入し、ウェーハ支持基板1と半導体ウェーハ3とを貼付けている粘着剤2を溶解し接着力を低下させることがない。
【0021】
次に、裏面処理が完了したら、図2(d)に示すように、ウェーハ支持基板1裏面および貫通穴4内部に形成したタングステンシリサイド(WSi)の被膜101をプラズマエッチングで除去する。尚、タングステンシリサイド(WSi)は、プラズマエッチングで容易に除去できるため、この点においても被膜101として好適である。
【0022】
次に、図2(e)に示すように、ウェーハ支持基板1と半導体ウェーハ3との接合体を、剥離用の溶剤5(例えば、メチルエチルケトンやアセトンやイソプロピルアルコールなどの有機溶剤)に浸漬し、粘着剤2を溶解しウェーハ支持基板1と半導体ウェーハ3とを剥離させる。ここで、剥離用の溶剤5は、半導体ウェーハ3の外周部から浸入することに加えて、ウェーハ支持基板1に設けられた多数の貫通穴4を通して浸入するため、粘着剤2の溶解速度をより速めることができる。
【0023】
このように、予め、半導体ウェーハ3をウェーハ支持基板1に貼付けて裏面処理すると、半導体ウェーハ3の厚みが薄くなって機械的強度が低下しても、工程中のストレスで半導体ウェーハ3が割れるのを防止できる。また、裏面処理前に貫通穴4内部に被膜101を形成しておくため、裏面処理中に使用する種々の処理液が貫通穴4を通して浸入し、粘着剤2を溶解させる心配がない。
【0024】
尚、上記では、被膜としてタングステンシリサイド(WSi)で成る被膜で説明したが、特にこれに限るものではなく、耐有機溶剤性,耐酸性に優れた薄膜であれば何でもよく、例えば、モリブデンシリサイド(MoSi)でもよい。また、若干、耐酸性は劣るが、コバルトシリサイド(CoSi)やニッケルシリサイド(NiSi)であってもよい。
【0025】
【発明の効果】
本発明の半導体装置の製造方法によると、裏面処理前に貫通穴4内部に被膜101を形成しておくため、裏面処理中に使用する種々の処理液が貫通穴4を通して浸入し、粘着剤2を溶解させる心配がない。また、被膜101としてタングステンシリサイド(WSi)を用いると、耐有機溶剤性、耐酸性に優れており、かつ、プラズマエッチングで容易に除去できて好適である。また、被膜101の厚さとしては、機械的強度や、後工程での除去のしやすさを考慮すると、2μm±1μmが好適である。
【図面の簡単な説明】
【図1】本発明の半導体装置の製造方法の工程順の断面図
【図2】本発明の半導体装置の製造方法の工程順の断面図
【図3】従来の半導体装置の製造方法の工程順の断面図
【図4】ウェーハ支持基板の平面図および断面図
【符号の説明】
1 ウェーハ支持基板
2 粘着剤
3 半導体ウェーハ
3a 半導体ウェーハの表面
3b 半導体ウェーハの裏面
4 貫通穴
5 剥離用の溶剤
101 被膜
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a process for processing a back surface of a semiconductor wafer.
[0002]
[Prior art]
For example, in the case of a semiconductor wafer made of a compound such as GaAs, after forming elements on the surface of the semiconductor wafer, the semiconductor wafer is polished to a very small thickness from the back side to reduce thermal resistance. In order to prevent the mechanical strength from being reduced and the semiconductor wafer from being cracked by the stress during the process, the semiconductor wafer is preliminarily adhered to a wafer support substrate made of quartz, glass, or the like with a pressure-sensitive adhesive.
[0003]
3 and 4 show an example of a conventional method for manufacturing a semiconductor device. FIG. 3 is a cross-sectional view showing the order of steps, and FIG. 4 is a plan view and a cross-sectional view of a wafer support substrate.
[0004]
In the conventional method of manufacturing a semiconductor device, first, as shown in FIG. 3A, a semiconductor wafer 3 is attached to a wafer support substrate 1 made of glass via an adhesive 2. In the attaching procedure, the adhesive 2 is applied to the front surface 3a of the semiconductor wafer 3 and pressed against the wafer support substrate 1 while heating the applied surface so that the back surface 3b of the semiconductor wafer 3 is exposed.
[0005]
Here, the pressure-sensitive adhesive 2 is, for example, an acrylic pressure-sensitive adhesive, a photoresist, a wax, or the like. When the pressure-sensitive adhesive is stripped, the pressure-sensitive adhesive 2 is dissolved with an organic solvent such as methyl ethyl ketone, acetone, or isopropyl alcohol. In the above description, the pressure-sensitive adhesive 2 is applied to the semiconductor wafer 3, but the method may be applied to the wafer support substrate 1 or to both.
[0006]
As shown in FIG. 4, the wafer support substrate 1 is provided with a large number of through holes 4 (about several hundred μm in diameter). The purpose of providing the through-holes 4 is to escape bubbles generated when the semiconductor wafer 3 and the wafer supporting substrate 1 are bonded to each other, and to allow a solvent for peeling to enter through the through-holes 4 at the time of peeling and to form the adhesive 2. This is for making it easier to dissolve.
[0007]
Next, as shown in FIG. 3B, the back surface 3b of the semiconductor wafer 3 is polished to a desired thickness with a back surface polishing device (not shown) (in the figure, the polished portion is indicated by a chain line). For example, using photolithography technology, a via hole (not shown) penetrating from the back surface 3b side to the front surface 3a side of the semiconductor wafer 3 is formed, or after an acid treatment (pre-treatment), a vacuum deposition method, etc. To form a predetermined metal film (not shown).
[0008]
Next, when the back surface treatment is completed, as shown in FIG. 3 (c), the bonded body of the wafer supporting substrate 1 and the semiconductor wafer 3 is separated from the peeling solvent 5 (for example, an organic solvent such as methyl ethyl ketone, acetone or isopropyl alcohol). Solvent) to dissolve the pressure-sensitive adhesive 2 and separate the wafer support substrate 1 and the semiconductor wafer 3. Here, in addition to the solvent 5 for separation coming in from the outer peripheral portion of the semiconductor wafer 3 and also penetrating through a large number of through holes 4 provided in the wafer support substrate 1, the dissolution rate of the adhesive 2 is increased. Can be faster. (For example, Patent Document 1)
[0009]
As described above, if the semiconductor wafer 3 is attached to the wafer support substrate 1 in advance and the rear surface is processed, even if the thickness of the semiconductor wafer 3 is reduced and the mechanical strength is reduced, the semiconductor wafer 3 is cracked by stress during the process. Can be prevented.
[0010]
[Patent Document 1]
JP-A-2002-184845 (page 2, 0003 to 0005, FIG. 5)
[0011]
[Problems to be solved by the invention]
However, in the above-described method for manufacturing a semiconductor device, since a large number of through holes 4 are provided in the wafer supporting substrate 1, for example, when performing photolithography, etching, or cleaning work as backside processing, Various processing liquids such as an organic solvent and an acid used in each operation penetrate through the through-holes 4, dissolve the adhesive 2, and separate the wafer supporting substrate 1 and the semiconductor wafer 3, and as a result, the semiconductor wafer 3 There was a problem of being damaged.
[0012]
An object of the present invention is that various processing liquids such as an organic solvent and an acid used during the back surface treatment penetrate through the through holes of the wafer support substrate and dissolve the adhesive bonding the wafer support substrate and the semiconductor wafer. It is an object of the present invention to provide a method of manufacturing a semiconductor device without any problem.
[0013]
[Means for Solving the Problems]
The method for manufacturing a semiconductor device according to the present invention includes:
An attaching step of attaching a wafer supporting substrate and a semiconductor wafer having a large number of through holes via an adhesive,
A backside processing step of performing a predetermined backside processing on the backside of the semiconductor wafer,
In a method for manufacturing a semiconductor device, comprising: a dissolution step of dissolving an adhesive with a solvent for separation that dissolves the adhesive, and a separation step of separating a wafer supporting substrate and a semiconductor wafer
A method of manufacturing a semiconductor device, comprising: forming a film inside a through hole before a back surface processing step; and preventing intrusion of various processing liquids for dissolving an adhesive through the through hole during the back surface processing step. It is.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
One example of a method for manufacturing a semiconductor device according to the present invention is shown in FIGS. 1 and 2 are cross-sectional views showing the order of steps. The same parts as those in FIGS. 3 and 4 are denoted by the same reference numerals.
[0015]
In the method of manufacturing a semiconductor device according to the present invention, first, as shown in FIG. 1A, a semiconductor wafer 3 is attached to a wafer support substrate 1 made of glass via an adhesive 2. In the attaching procedure, the adhesive 2 is applied to the front surface 3a of the semiconductor wafer 3 and pressed against the wafer support substrate 1 while heating the applied surface so that the back surface 3b of the semiconductor wafer 3 is exposed.
[0016]
Here, the pressure-sensitive adhesive 2 is, for example, an acrylic pressure-sensitive adhesive, a photoresist, a wax, or the like. When the pressure-sensitive adhesive is stripped, the pressure-sensitive adhesive 2 is dissolved with an organic solvent such as methyl ethyl ketone, acetone, or isopropyl alcohol. In the above description, the pressure-sensitive adhesive 2 is applied to the semiconductor wafer 3, but the method may be applied to the wafer support substrate 1 or to both.
[0017]
As shown in FIG. 4, the wafer support substrate 1 is provided with a large number of through holes 4 (about several hundred μm in diameter). The purpose of providing the through-holes 4 is to escape bubbles generated when the semiconductor wafer 3 and the wafer supporting substrate 1 are bonded to each other, and to allow a solvent for peeling to enter through the through-holes 4 at the time of peeling and to form the adhesive 2. This is for making it easier to dissolve.
[0018]
Next, as shown in FIG. 1B, as a manufacturing method which is a feature of the present invention, a 2 μm-thick film made of, for example, tungsten silicide (WSi 2 ) is formed on the back surface of the wafer support substrate 1 and inside the through hole 4. 101 is formed by a sputtering method. The purpose of forming the coating 101 is to allow various processing liquids used in the back surface processing step to penetrate through the through holes 4 to dissolve the adhesive 2 that adheres the wafer support substrate 1 and the semiconductor wafer 3 and to form an adhesive force. It is for preventing that it reduces. Here, it is preferable to use tungsten silicide (WSi 2 ) as the coating 101 because it has excellent organic solvent resistance and acid resistance. Tungsten silicide (WSi 2 ) is also excellent in mechanical strength and heat resistance, so that the thickness of the coating is at least 1 μm or more, and is thin in consideration of easy removal in a later step. More preferably, 2 μm ± 1 μm is preferable.
[0019]
Next, as shown in FIG. 2C, the back surface 3b of the semiconductor wafer 3 is polished to a desired thickness with a back surface polishing device (not shown) (in the figure, the polished portion is indicated by a chain line). For example, using a photolithography technique, a via hole (not shown) penetrating from the back surface 3b to the front surface 3a of the semiconductor wafer 3 is formed. A back surface treatment such as forming a metal film (not shown) of FIG.
[0020]
At this time, since the coating film 101 of tungsten silicide (WSi 2 ) is formed on the back surface of the wafer support substrate 1 and inside the through hole 4, various processing liquids penetrate through the through hole 4, and the wafer support substrate 1 and the semiconductor The adhesive 2 that is attached to the wafer 3 is not dissolved and the adhesive strength is not reduced.
[0021]
Next, when the back surface processing is completed, as shown in FIG. 2D, the tungsten silicide (WSi 2 ) coating 101 formed on the back surface of the wafer support substrate 1 and inside the through hole 4 is removed by plasma etching. Tungsten silicide (WSi 2 ) can be easily removed by plasma etching.
[0022]
Next, as shown in FIG. 2E, the bonded body of the wafer supporting substrate 1 and the semiconductor wafer 3 is immersed in a solvent 5 for peeling (for example, an organic solvent such as methyl ethyl ketone, acetone, or isopropyl alcohol). The adhesive 2 is dissolved, and the wafer support substrate 1 and the semiconductor wafer 3 are separated. Here, in addition to the solvent 5 for separation entering from the outer peripheral portion of the semiconductor wafer 3 and entering through a large number of through holes 4 provided in the wafer supporting substrate 1, the dissolution rate of the adhesive 2 is increased. Can be faster.
[0023]
As described above, if the semiconductor wafer 3 is attached to the wafer support substrate 1 in advance and the rear surface is processed, even if the thickness of the semiconductor wafer 3 is reduced and the mechanical strength is reduced, the semiconductor wafer 3 is cracked by stress during the process. Can be prevented. Further, since the coating 101 is formed inside the through-hole 4 before the back surface treatment, there is no fear that various treatment liquids used during the back surface treatment enter the through-hole 4 and dissolve the adhesive 2.
[0024]
In the above description, a film made of tungsten silicide (WSi 2 ) has been described as a film. However, the film is not particularly limited to this, and any film having excellent organic solvent resistance and acid resistance may be used. For example, molybdenum silicide may be used. (MoSi 2 ). In addition, cobalt silicide (CoSi 2 ) or nickel silicide (NiSi 2 ) may be used although the acid resistance is slightly inferior.
[0025]
【The invention's effect】
According to the method for manufacturing a semiconductor device of the present invention, since the coating 101 is formed inside the through hole 4 before the back surface treatment, various treatment liquids used during the back surface treatment penetrate through the through hole 4 and the adhesive 2 No need to worry about dissolving. Further, it is preferable to use tungsten silicide (WSi 2 ) as the film 101 because it has excellent organic solvent resistance and acid resistance and can be easily removed by plasma etching. The thickness of the coating 101 is preferably 2 μm ± 1 μm in consideration of mechanical strength and ease of removal in a later step.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view in the order of steps of a method for manufacturing a semiconductor device according to the present invention; FIG. 2 is a cross-sectional view in the order of steps of a method for manufacturing a semiconductor device according to the present invention; FIG. 4 is a plan view and a cross-sectional view of a wafer support substrate.
DESCRIPTION OF SYMBOLS 1 Wafer support substrate 2 Adhesive 3 Semiconductor wafer 3a Front surface 3b of semiconductor wafer Back surface 4 of semiconductor wafer 4 Through hole 5 Solvent 101 for peeling Coating

Claims (4)

多数の貫通穴を有するウェーハ支持基板と半導体ウェーハとを粘着剤を介して貼付ける貼付工程と、
前記半導体ウェーハの裏面に所定の裏面処理を施す裏面処理工程と、
前記粘着剤を溶解する剥離用の溶剤で前記粘着剤を溶解させ、前記ウェーハ支持基板と前記半導体ウェーハとを剥離する剥離工程とを含む半導体装置の製造方法において、
前記裏面処理工程の前に、前記貫通穴内部に被膜を形成し、前記裏面処理工程中に前記貫通穴を通して前記粘着剤を溶解させる各種の処理液が浸入することを防止することを特徴とする半導体装置の製造方法。
An attaching step of attaching a wafer supporting substrate and a semiconductor wafer having a large number of through holes via an adhesive,
A back surface treatment step of performing a predetermined back surface treatment on the back surface of the semiconductor wafer,
A method for manufacturing a semiconductor device, comprising: a dissolving step of dissolving the adhesive with a solvent for dissolving the adhesive, and a separating step of separating the wafer supporting substrate and the semiconductor wafer.
Before the back surface treatment step, a coating is formed inside the through-hole to prevent infiltration of various treatment liquids for dissolving the adhesive through the through hole during the back surface treatment step. A method for manufacturing a semiconductor device.
前記被膜は、前記裏面処理工程完了後に除去し、前記剥離工程においては、前記貫通穴を通して前記剥離用の溶剤が浸入可能とすることを特徴とする請求項1に記載の半導体装置の製造方法。2. The method according to claim 1, wherein the coating is removed after the back surface processing step is completed, and in the stripping step, the solvent for stripping can enter through the through hole. 3. 前記被膜は、タングステンシリサイド(WSi)膜であることを特徴とする請求項1、または、請求項2に記載の半導体装置の製造方法。 3. The method according to claim 1, wherein the coating is a tungsten silicide (WSi 2 ) film. 4. 前記被膜の厚さは、2μm±1μmであることを特徴とする請求項1、乃至、請求項3に記載の半導体装置の製造方法。4. The method according to claim 1, wherein the thickness of the coating is 2 μm ± 1 μm. 5.
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Cited By (8)

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JP2007158124A (en) * 2005-12-06 2007-06-21 Tokyo Ohka Kogyo Co Ltd Support plate and adhesion method therefor
WO2008007454A1 (en) * 2006-07-14 2008-01-17 Tokyo Ohka Kogyo Co., Ltd. Support plate, transfer apparatus, peeling apparatus and peeling method
WO2008015771A1 (en) * 2006-08-02 2008-02-07 Tokyo Ohka Kogyo Co., Ltd. Support plate, method of detaching wafer, and method of thinning wafer
JP2013179253A (en) * 2011-09-29 2013-09-09 Sumitomo Electric Ind Ltd Method for separating support substrate from group iii nitride composite substrate, and method for manufacturing group iii nitride wafer
CN103444274A (en) * 2011-03-29 2013-12-11 松下电器产业株式会社 Solder transfer base, method for producing solder transfer base, and method for transferring solder
CN103972112A (en) * 2013-02-06 2014-08-06 矽品精密工业股份有限公司 Method of forming semiconductor package
JP2018142631A (en) * 2017-02-28 2018-09-13 日化精工株式会社 Support substrate for temporary fixing of wafer and temporary fixing processing method for wafer
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158124A (en) * 2005-12-06 2007-06-21 Tokyo Ohka Kogyo Co Ltd Support plate and adhesion method therefor
WO2008007454A1 (en) * 2006-07-14 2008-01-17 Tokyo Ohka Kogyo Co., Ltd. Support plate, transfer apparatus, peeling apparatus and peeling method
WO2008015771A1 (en) * 2006-08-02 2008-02-07 Tokyo Ohka Kogyo Co., Ltd. Support plate, method of detaching wafer, and method of thinning wafer
CN103444274A (en) * 2011-03-29 2013-12-11 松下电器产业株式会社 Solder transfer base, method for producing solder transfer base, and method for transferring solder
US9238278B2 (en) 2011-03-29 2016-01-19 Panasonic Intellectual Property Management Co., Ltd. Solder transfer substrate, manufacturing method of solder transfer substrate, and solder transfer method
TWI579096B (en) * 2011-03-29 2017-04-21 松下知識產權經營股份有限公司 Solder transferring substrate, manufacturing method of solder transferring substrate, and solder transferring method
JP2013179253A (en) * 2011-09-29 2013-09-09 Sumitomo Electric Ind Ltd Method for separating support substrate from group iii nitride composite substrate, and method for manufacturing group iii nitride wafer
CN103972112A (en) * 2013-02-06 2014-08-06 矽品精密工业股份有限公司 Method of forming semiconductor package
JP2018142631A (en) * 2017-02-28 2018-09-13 日化精工株式会社 Support substrate for temporary fixing of wafer and temporary fixing processing method for wafer
CN112289734A (en) * 2020-11-25 2021-01-29 绍兴同芯成集成电路有限公司 Process for dissociating glass carrier plate by organic solvent infiltration debonding bonding ultrathin wafer

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