JP2004307990A - ガス供給装置 - Google Patents
ガス供給装置 Download PDFInfo
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- JP2004307990A JP2004307990A JP2003349921A JP2003349921A JP2004307990A JP 2004307990 A JP2004307990 A JP 2004307990A JP 2003349921 A JP2003349921 A JP 2003349921A JP 2003349921 A JP2003349921 A JP 2003349921A JP 2004307990 A JP2004307990 A JP 2004307990A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
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- Plasma Technology (AREA)
Abstract
【解決手段】基板の表面に蒸着用ガスを供給するためのガス供給装置において、その内部に沿って環状に形成されたガス供給路と、前記ガス供給路から中心方向に形成された複数のガス分配路と、を有する環状のガス供給リングと;前記各ガス分配路に連通するガス噴射ノズルを有し、前記ガス供給リングの内側に脱着できるように結合される複数のアダプターを含み、前記複数のアダプターは、前記ガス噴射ノズルの噴射形態が異なることを特徴とする。
【選択図】図2
Description
3 セラミック板
5 プラズマアンテナ
7 ベース
10 基板
11 基板支持台
15 ガス排出口
20 ガス供給装置
21 ガス供給リング
23 ガス供給路
25 ガス分配路
27 アダプター収容部
28 スクリュー孔
29 遮断部材収容部
30 アダプター
31 ガス噴射ノズル
33 ガス連結路
35 スクリュー締結孔
40 遮断部材
41 O−リング
50 補助噴射ノズル
51 補助噴射ノズル支持部
Claims (13)
- 基板の表面に蒸着用ガスを供給するためのガス供給装置において、
その内部に沿って環状に形成されたガス供給路と、前記ガス供給路から中心方向に形成された複数のガス分配路と、を有する環状のガス供給リングと;
前記各ガス分配路に連通するガス噴射ノズルを有し、前記ガス供給リングの内側に脱着できるように結合される複数のアダプターを含み、
前記複数のアダプターは、前記ガス噴射ノズルの噴射形態が異なることを特徴とするガス供給装置。 - 前記ガス噴射ノズルの噴射形態は、噴射角度と噴射位置との中で少なくともいずれか一つが異なることを特徴とする請求項1に記載のガス供給装置。
- 前記ガス供給リングの前記ガス供給路は、複数設けられ、
前記アダプターは、前記ガス噴射ノズルと連通されるように上下方向に形成され、前記ガス分配路と連通されるガス連結路をさらに有することを特徴とする請求項2に記載のガス供給装置。 - 前記ガス分配路をそれぞれ選択的に遮断することができる遮断手段をさらに含むことを特徴とする請求項3に記載のガス供給装置。
- 前記遮断手段は、各ガス分配路に挿入されて前記ガス分配路を遮断することができる複数の遮断部材を含むことを特徴とする請求項4に記載のガス供給装置。
- 前記ガス供給リングには、前記各アダプターを収容するための複数のアダプター収容部が形成されていることを特徴とする請求項5に記載のガス供給装置。
- 前記アダプター収容部の内の前記各ガス分配路の出口には、前記遮断部材を収容するための遮断部収容部が形成されていることを特徴とする請求項6に記載のガス供給装置。
- 前記ガス噴射ノズルと連通されるように前記各アダプターに着脱できるように結合された複数の補助噴射ノズルをさらに含むことを特徴とする請求項7に記載のガス供給装置。
- 前記アダプターには、前記ガス噴射ノズルと連通されて前記補助噴射ノズルを支持する補助噴射ノズル支持部が設けられたことを特徴とする請求項8に記載のガス供給装置。
- 前記補助噴射ノズルは、前記ガス噴射ノズルと所定の角度をなすことを特徴とする請求項9に記載のガス供給装置。
- 前記ガス噴射ノズルは、前記ガス連結路から水平に延長されていることを特徴とする請求項3、4及び8のうちいずれか一項に記載のガス供給装置。
- 前記ガス噴射ノズルは、前記ガス連結路から下向きに延長されていることを特徴とする請求項3、4及び8のうちいずれか一項に記載のガス供給装置。
- 前記噴射ノズルは、前記ガス連結路から上向きに傾斜に延長されることを特徴とする請求項3、4及び8のうちいずれか一項に記載のガス供給装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0022366A KR100500246B1 (ko) | 2003-04-09 | 2003-04-09 | 가스공급장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004307990A true JP2004307990A (ja) | 2004-11-04 |
JP4142545B2 JP4142545B2 (ja) | 2008-09-03 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003349921A Expired - Fee Related JP4142545B2 (ja) | 2003-04-09 | 2003-10-08 | ガス供給装置 |
Country Status (4)
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US (1) | US7303141B2 (ja) |
JP (1) | JP4142545B2 (ja) |
KR (1) | KR100500246B1 (ja) |
CN (1) | CN1263092C (ja) |
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- 2003-10-08 JP JP2003349921A patent/JP4142545B2/ja not_active Expired - Fee Related
-
2004
- 2004-01-07 CN CNB200410001360XA patent/CN1263092C/zh not_active Expired - Fee Related
- 2004-03-17 US US10/801,852 patent/US7303141B2/en not_active Expired - Fee Related
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JP2008543095A (ja) * | 2005-10-05 | 2008-11-27 | ペーファウアー テプラ アーゲー | 偏向プラズマビームを用いた下流プラズマエッチング |
JP4897798B2 (ja) * | 2005-10-05 | 2012-03-14 | ペーファウアー テプラ アーゲー | 偏向プラズマビームを用いた下流プラズマエッチング |
KR101165594B1 (ko) * | 2005-10-05 | 2012-07-23 | 페파우아 테플라 아게 | 편향 가능한 플라즈마 빔을 이용한 다운-스트림 플라즈마에칭 |
WO2018135772A1 (en) * | 2017-01-23 | 2018-07-26 | Edwards Korea Ltd. | Nitrogen oxide reduction apparatus and gas treating apparatus |
US11430638B2 (en) | 2017-01-23 | 2022-08-30 | Edwards Limited | Plasma generating apparatus and gas treating apparatus |
US11985754B2 (en) | 2017-01-23 | 2024-05-14 | Edwards Korea Ltd. | Nitrogen oxide reduction apparatus and gas treating apparatus |
Also Published As
Publication number | Publication date |
---|---|
CN1536612A (zh) | 2004-10-13 |
JP4142545B2 (ja) | 2008-09-03 |
KR100500246B1 (ko) | 2005-07-11 |
CN1263092C (zh) | 2006-07-05 |
US7303141B2 (en) | 2007-12-04 |
KR20040088242A (ko) | 2004-10-16 |
US20040217217A1 (en) | 2004-11-04 |
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