JP2004302090A - Method for manufacturing mother die, mother die, method for manufacturing mold, mold, optical element and electron beam drawing apparatus - Google Patents

Method for manufacturing mother die, mother die, method for manufacturing mold, mold, optical element and electron beam drawing apparatus Download PDF

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Publication number
JP2004302090A
JP2004302090A JP2003094478A JP2003094478A JP2004302090A JP 2004302090 A JP2004302090 A JP 2004302090A JP 2003094478 A JP2003094478 A JP 2003094478A JP 2003094478 A JP2003094478 A JP 2003094478A JP 2004302090 A JP2004302090 A JP 2004302090A
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Japan
Prior art keywords
electron
base
pattern shape
dose
predetermined
Prior art date
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Pending
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JP2003094478A
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Japanese (ja)
Inventor
Kazumi Furuta
Osamu Masuda
和三 古田
修 増田
Original Assignee
Konica Minolta Holdings Inc
コニカミノルタホールディングス株式会社
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Priority to JP2003094478A priority Critical patent/JP2004302090A/en
Publication of JP2004302090A publication Critical patent/JP2004302090A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To decrease influences by inner scattering of an electron beam and to draw and form a diffraction structure giving specified optical performance. <P>SOLUTION: The method for manufacturing a mother die aims to manufacture the mother die of a mold for molding an optical element to form a specified pattern feature by irradiating and scanning a base material with an electron beam to a specified dose. The method includes steps of: setting a first dose lower than the above specified dose; drawing a first pattern feature corresponding to the above specified pattern feature on the base material with the first dose; developing the base material having the first pattern feature drawn thereon; setting a second dose lower than the specified dose; drawing a second pattern feature corresponding to the specified pattern feature with the second dose on the base material where the first pattern feature is formed by the above developing process; and developing the base material with the second pattern feature drawn. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a drawing technique using an electron beam, and more particularly to a technique for drawing a predetermined pattern, for example, a diffraction pattern corresponding to an optical element, on a substrate to be drawn.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, CDs, DVDs, and the like have been widely used as information recording media, and many optical elements have been used in precision equipment such as a reading device that reads information from these recording media.
[0003]
In recent years, the specifications and performance required for these optical elements have been improved. In particular, in a pickup lens for a recording medium such as a DVD, a diffraction structure with higher accuracy is formed as the recording density increases. Is required. Specifically, processing accuracy at a level smaller than the wavelength of light, for example, at the nm level is required.
[0004]
By the way, these optical elements, for example, an optical lens, often use a resin optical lens rather than a glass optical lens from the viewpoint of cost reduction and miniaturization. It is manufactured by general injection molding.
[0005]
Therefore, for example, when manufacturing an optical element having a diffractive structure or the like on the optical function surface, a mold for injection molding this optical element is formed in advance with a surface for providing such a diffractive structure. Need to be kept.
[0006]
Until now, molding dies have been processed by cutting tools of general molding and processing techniques.However, when trying to form fine shapes such as diffractive structures, the processing accuracy is poor and the strength and There is a limit in the service life, and it is difficult to perform precise processing on the order of submicron or less.
[0007]
Therefore, the base material to be a master is irradiated with an electron beam, and a fine shape such as a diffraction structure is drawn. An attempt has been made to obtain a molding die by transferring and forming a fine shape on a metal mold by performing electroforming using this matrix (for example, see Patent Document 1).
[0008]
[Patent Document 1]
JP 2002-333722 A
(Paragraph [0161]-[0170], Fig. 13)
[Problems to be solved by the invention]
[0009]
By the way, the electron beam applied to the base material scatters a considerable amount inside the base material, and the degree of the scattering tends to increase toward the inside of the base material. For this reason, for example, when a blaze is drawn as a diffractive structure on a base material, the influence of the drawing on a groove portion of the blaze located at the innermost part of the base material is limited to a predetermined range due to internal scattering of an electron beam. As a result, there is a problem that the shape of the groove portion of the blaze is significantly rounded after development.
[0010]
When the shape of the groove portion of the blaze is rounded in this way, the optical performance of the diffraction structure is hindered, and the product value of the optical element is reduced.
[0011]
In particular, in the case of an optical element such as an OD lens, such a problem becomes serious because processing accuracy within a level of several tens of nm is required for a design value.
[0012]
The present invention has been made in view of the above circumstances, and it is an object of the present invention to draw and form a diffractive structure capable of obtaining predetermined optical performance by reducing the influence of internal scattering of an electron beam. It is an object of the present invention to provide a method for manufacturing a matrix that can be performed.
[0013]
[Means for Solving the Problems]
In order to achieve the above object, the invention according to claim 1 irradiates an electron beam to a substrate, and scans the electron beam so that the irradiation amount becomes a predetermined irradiation amount. A method of manufacturing a master mold for manufacturing a mold for forming an optical element that forms a predetermined pattern shape on the base material, wherein the first irradiation amount is smaller than the predetermined irradiation amount. A first irradiation dose setting step of setting; a first drawing step of drawing a first pattern shape corresponding to the predetermined pattern shape on the base material at the first irradiation dose; A first development step of developing the substrate on which the first pattern shape is drawn, a second irradiation amount setting step of setting a second irradiation amount smaller than the predetermined irradiation amount, The first pattern is developed by developing the substrate on which the pattern shape is drawn. A second drawing step of drawing a second pattern shape corresponding to the predetermined pattern shape at the second irradiation amount on the base material on which the shape is formed; And a second developing step of developing the applied base material.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings. In the following, taking a case where the drawing step and the developing step are repeated twice as an example, a method for manufacturing a master mold, an electron beam drawing apparatus, and a method for manufacturing a mold are described along the flow until an optical element is obtained. The optical element will be described in this order, but the number of times the drawing step and the developing step are repeated may be three or more.
[0015]
[Manufacturing method of mother die]
First, a method of manufacturing a matrix will be described with reference to FIG. 4 along the flow of the flowcharts shown in FIGS.
[0016]
<Cutting process>
As shown in FIG. 2 A matrix material 110 having a substantially hemispherical shape made of a resin material such as polysilicon or polyolefin is embedded in a central opening 111p of a disk-shaped base material 111 made of a conductive material such as a metal, and an adhesive is used. The member E is fixed so as not to rotate relatively (see FIG. 4A), and a member E is obtained (step S01). Note that the member E corresponds to the “base material” of the present invention. Next, the toy 150 is attached to the base 111 by bolts 152 which are penetrated through a central hole 151 of a jig (hereinafter referred to as a toy) 150 and are screwed into screw holes 111g of the base 111. Then, the combination mark MX and the ID number NX are given to the base material 111 (step S02). As shown in FIG. 5, the ID number NX is a number given to each of the attached toys 150, and functions as information for specifying it. In the present example, the ID number NX is engraved by laser drawing in the groove 111h obtained by cutting the outer peripheral surface of the base material 111 in a tangentially narrow plane, but printing may be performed. Further, the groove may be an entire circumferential groove having the same depth. Also, the alignment mark MX for adjusting the phase with the base material 111 can be engraved by laser processing.
[0017]
Next, in the process management database constructed in the computer (not shown), the ID number NX of the yatoy, the mounting surface (direction), the tightening torque, the working environment temperature (ambient temperature), etc. are associated with this member E. Is stored (step S03). Thereafter, the member E is attached to the chuck of an unillustrated ultra-precision lathe (SPDT processing machine) via the toy 150 (step S04). Furthermore, since the member E is not rotated, the outer peripheral surface 111f of the base material 111 is cut with a diamond tool to thereby provide a high-precision lathe, for example, an SPDT (Single Point Diamond Turning) machine with high precision with respect to the rotation axis. Then, the upper surface of the base material 110 is cut as shown in FIG. 4B to form a base optical surface (corresponding to the optical curved surface of the optical element to be molded) 110a, and A peripheral groove 111a (first mark) is cut on the upper surface of the base material 111 (step S05). At this time, the feed amount and the cut amount are controlled while performing the temperature control to obtain a surface roughness of 50 nm to 20 nm of the curved surface. At this time, the position of the optical axis of the mother optical surface 110a cannot be confirmed from its outer shape, but since it is processed at the same time, the mother optical surface 110a and the circumferential groove 111a are formed coaxially with high precision. That is, the outer peripheral surface 111f of the base material 111 formed on the cylindrical surface is also formed coaxially with the optical axis with high precision. Here, the peripheral groove 111a may be formed of, for example, a plurality of grooves including a dark field portion (corresponding to a concave portion) and a bright field portion (corresponding to a convex portion). It is more preferable to have a diamond tool (this can be easily formed if the tip of the diamond tool has irregularities). Further, the concave and convex shape of the peripheral groove 111a can function as a dike for preventing the scattering of the resist applied as described later.
[0018]
Further, the working environment temperature at the time of cutting of the member E is stored in a process management database constructed on a computer (not shown), and the member E is removed from the SPDT processing machine (step S06). The toy 150 is removed from the device (step S07). Then, the processing mark (tool mark) of the diamond tool which looks rainbow-colored visually is polished and polished until the rainbow-colored color disappears. Further, the member E is set on a stage of a not-shown FIB (Focused Ion Beam) processing machine (step S08). Next, the circumferential groove 111a in the member E on the stage of the FIB processing machine is read, and the position of the optical axis of the base material 110 is determined from the inner edge thereof (step S09), and is equidistant from the determined optical axis. Three (or more than four) second marks 111b are drawn on the base material 111 (see FIGS. 4B and 6) (step S10). The second mark 111b is used as a reference for processing the member E, that is, an alignment mark in a first drawing step and a second drawing step described later. Since the width of the peripheral groove 111a formed by the diamond tool is relatively wide, using it as a reference for processing may reduce the processing accuracy. However, the FIB processing machine has a width of about 20 nm. For example, when a cross mark is formed as the second mark 111b, a fine mark of 20 nm × 20 nm can be formed. By using this as a reference for processing, a higher mark can be obtained. Accurate machining becomes possible. Next, the member E is removed from the stage of the FIB processing machine (step S11).
[0019]
<Resist film formation process>
Next, the protective tape 113 is stuck on the second mark 111b (see FIG. 4C) (step S12). This protective tape 113 is for preventing the resist L applied on the base material 110 in the post-processing from adhering to the second mark 111b. This is because if the resist L adheres to the second mark 111b, reading becomes inappropriate as a processing reference. Note that the protection by the protection tape is shown in FIG. 4C and shows a case where only one second mark 111b is protected, but the same applies to the other second marks 111b. Further, the member E is set on a spin coater (not shown) (Step S13), and a press pin for rotating the substrate to be coated with the resist L while flowing the resist L onto the base material 110 is performed (Step S14). The spin of the resist L is stopped to stop the flow of the resist L, and the spin is performed to coat the resist L (see FIG. 4D) (step S15). By separating the press pin from the main spin, it is possible to coat the resist L having a uniform thickness on the mother optical surface 110a, which is a complicated curved surface. Here, the resist L is made of a polymer resin material that is cured by heating or ultraviolet rays, and has a property that bonds between molecules are cut and decomposed according to the amount of energy given by the electron beam. (The decomposed portion is removed in a first development step and a second development step described later).
[0020]
Thereafter, the member E is removed from the spin coater (Step S16), and the member E is baked (heated) to stabilize the film of the resist L (Step S17). The temperature at this time is about 170 ° C., and heating is performed for about 20 minutes. Further, the protective tape 113 is peeled off (Step S18). The member E in such a state is shown in FIG.
[0021]
<Shape measurement process>
Subsequently, the member E is set in a shape measuring device (having an image recognizing unit and a storage unit) described later (step S19), and the second mark 111b is detected using the image recognizing unit of the shape measuring device (step S19). Step S20). Further, the three-dimensional coordinates of the base optical surface 110a of the base material 110 obtained by the measurement or used in the ultra-precision lathe are converted into three-dimensional coordinates based on the second mark 111b and stored. It is stored in the means (step S21). As described above, the mother optical surface 110a is stored again in the three-dimensional coordinates based on the second mark 111b because the electron beam is appropriately drawn in a first drawing step and a second drawing step described later. This is because it is necessary to adjust the depth of focus of the electron beam with respect to the drawing surface of the mother optical surface 110a, or to adjust the positional relationship between the electron gun and the member E. Note that the second mark 111b can also be used as a mark for position recognition so that an operator can visually recognize where the reference point of the coordinates related to the measurement data is at the time of measurement. Thereafter, the member E is removed from the shape measuring instrument (Step S22).
[0022]
(Shape measuring instrument)
Here, the shape measuring device will be described with reference to FIG.
[0023]
As shown in FIG. 7, the shape measuring device 200 includes a first laser measuring device 201, a second laser measuring device 202, a pinhole 205, a pinhole 206, a first light receiving section 203, and a second light receiving device. Unit 204 and the like, and further includes a measurement calculation unit (not shown) for calculating these measurement results, a storage unit for storing the measurement results, a control unit (not shown) having various control systems, and the like. .
[0024]
In such a configuration, the first laser beam length measuring device 201 irradiates the member E with the first light beam S1 and reflects the first light beam S1 reflected by the flat portion 110c of the matrix material 110. The light is received by the first light receiving unit 203 via the pinhole 205, and the first light intensity distribution is detected.
[0025]
At this time, since the first light beam S1 is reflected by the flat portion 110c of the base material 110, the first light beam S1 is reflected on the flat portion 110c of the base material 110 based on the first intensity distribution. ) The position is measured and calculated.
[0026]
Further, a second light beam S2 is emitted from the second laser length measuring device 202 to the member E from a direction different from the first light beam S1, and the second light beam S2 is transmitted through the mother optical surface 110a of the master mold material 110. Is received by the second light receiving unit 204 via the pinhole 206, and the second light intensity distribution is detected.
[0027]
In this case, since the second light beam S2 passes through the mother optical surface 110a of the matrix material 110, the mother light projecting from the flat portion of the matrix material 110 based on the second intensity distribution. The (height) position on the optical surface 110a is measured and calculated. The principle of measurement and calculation of the (height) position on the mother optical surface 110a of the master material 110 will be described later in the section of (electrometer) of the electron beam writing apparatus.
[0028]
<First mounting process>
As shown in FIG. 2, the member E is set on a three-dimensional stage of an electron beam writing apparatus to be described later (step S23).
[0029]
<First drawing position adjustment step>
Subsequently, the second mark 111b of the member E is detected via a measuring device (scanning electron microscope (SEM): attached to the electron beam writing apparatus) (step S24), and the detection result and the input unit Based on the input measurement information from the shape measuring device 200, specifically, the shape data of the member E, that is, the three-dimensional coordinates based on the second mark 111b of the base optical surface 110a, the electron gun and the member E , That is, the three-dimensional coordinate positional relationship between the electron gun and the mother optical surface 110a is adjusted. At this time, by adjusting the deflection position of the electron beam and moving the three-dimensional stage, the scanning position of the electron beam is adjusted. Thus, an appropriate position on the mother optical surface 110a can be scanned by irradiating an electron beam. Further, shape data relating to a predetermined pattern shape to be drawn on the mother optical surface 110a is created (step S25). Incidentally, the three-dimensional coordinates based on the second mark 111b of the base optical surface 110a may be measured by a measuring device together with the detection of the second mark 111b of the member E.
[0030]
<First irradiation dose setting step>
Further, the first electron beam irradiation amount is set so that a diffraction structure constituting a predetermined pattern shape, for example, a blaze diffraction ring zone is drawn separately for the first time and the second time. Specifically, in order to draw an intermediate shape (first pattern shape) corresponding to the blaze diffraction zone, the irradiation amount of the first electron beam is set to the electron beam for writing the blaze diffraction zone. Is set to a value that is half of the predetermined irradiation amount, which is the irradiation amount (step S26). Note that the irradiation amount of the electron beam is expressed as a dose amount indicating the injection amount of electrons per unit area. Hereinafter, the irradiation amount of the electron beam may be referred to as a dose amount. The details of the first dose setting step will be described later (the details of the first and second dose setting steps).
[0031]
<First drawing process>
Further, in order to perform the first drawing on the drawing surface, the three-dimensional stage is moved so that the electron beam is focused on the drawing position on the mother optical surface 110a, and the irradiation amount of the electron beam B is set to a predetermined value. Irradiation is performed so that the irradiation amount becomes half of the irradiation amount (first dose amount), and an intermediate shape (first pattern shape) corresponding to the blaze diffraction ring zone is drawn on the mother optical surface 110a. (See FIG. 4D) (step S27).
[0032]
After drawing by the electron beam drawing apparatus 1 in this way, the member E is removed from the three-dimensional stage (step S28).
[0033]
<First development step>
Further, the developing process of the member E is performed by a developing device (not shown), and the intermediate shape 110b corresponding to the diffraction zone of the blaze is formed. p (First shape) is obtained (see FIG. 4E) (step S29).
[0034]
<Second drawing position adjustment step>
Further, the member E is set on a three-dimensional stage of an electron beam writing apparatus described later (step S30).
[0035]
Subsequently, the second mark 111b of the member E is detected via the measuring device (step S31), and based on the detection result, the three marks of the electron gun and the mother optical surface 110a in the second drawing position adjustment step are determined. The positional relationship of the dimensional coordinates is adjusted in the same manner as the positional relationship of the three-dimensional coordinates between the electron gun and the mother optical surface 110a in the first drawing position adjusting step described above. Specifically, the positional relationship of the three-dimensional coordinates between the electron gun and the mother optical surface 110a in the second drawing position adjustment step is determined by comparing the three-dimensional coordinate relationship between the electron gun and the mother optical surface 110a in the first drawing position adjustment step. A conversion formula for converting into a three-dimensional coordinate positional relationship is obtained, and the electron beam scanning position is adjusted by adjusting the deflection position of the electron beam and moving the three-dimensional stage in accordance with the conversion formula. This corrects an error in the positional relationship between the electron gun and the mother optical surface 110a in the first drawing position adjustment step and the second drawing position adjustment step, and irradiates the electron beam to an appropriate position on the mother optical surface 110a. And scanning can be performed (S32).
[0036]
<Second irradiation dose setting step>
Subsequently, the irradiation amount of the second electron beam is set. Specifically, in order to draw a second pattern shape corresponding to the blaze diffraction zone, the irradiation amount of the second electron beam is determined by the irradiation amount of the electron beam for writing the blaze diffraction zone. The value is set to a value larger than half of a predetermined irradiation amount (step S33). As described above, in the present embodiment, an intermediate shape (first pattern shape) corresponding to the blaze diffraction ring zone is drawn and developed to form the shape (first pattern shape). Then, by further drawing the second pattern shape, as a result, a blaze diffraction ring zone having a predetermined pattern shape is drawn. The details of the second dose setting step will be described later (details of the first and second dose setting steps).
[0037]
<Second drawing step>
Further, in order to perform the second drawing on the drawing surface, the three-dimensional stage is moved so that the electron beam is focused on the drawing position on the mother optical surface 110a, and the irradiation amount of the electron beam B is set to a predetermined value. This is irradiated and scanned so as to have a value (second dose amount) larger than half of the irradiation amount of (2), and the second pattern shape corresponding to the blaze diffraction ring zone is formed on the mother optical surface 110a. draw. As a result, a blaze diffraction orbicular zone having a predetermined pattern shape is drawn (see FIG. 4F) (step S34).
[0038]
After drawing by the electron beam drawing apparatus 1 in this way, the member E is removed from the three-dimensional stage (step S35).
[0039]
<Second developing step>
As shown in FIG. 2, the developing process of the member E is further performed by a developing device (not shown) to obtain a blaze diffraction ring zone 110b having a predetermined pattern shape (see FIG. 4 (g)) (step S36). ).
[0040]
<Etching process>
As shown in FIG. 3, when it is necessary to perform an etching process to obtain a blaze diffraction ring zone 110b having a predetermined pattern shape, the member E is etched by an etching device (not shown). Then, the surface of the base optical surface 110a of the base material 110 is engraved to obtain a blazed diffraction ring zone 110b (illustrated exaggeratedly in practice) (step S37).
[0041]
Through the steps so far, the member E is completed as a matrix.
[0042]
[Electron beam writing system]
Here, the overall configuration of the electron beam drawing apparatus used in the above-described first drawing step and second drawing step will be described with reference to FIG. In the following, the member E in which the resist L film is formed on the mother optical surface 110a of the matrix material 110 corresponds to the base material 100.
[0043]
(overall structure)
As shown in FIG. 8, the electron beam writing apparatus 1 forms a high-resolution electron beam probe with a large current and scans the substrate 100 to be written at a high speed. An electron gun 2 that is formed and emits a beam to a target by generating an electron beam, a slit 3 through which the electron beam from the electron gun 2 passes, and a focus of the electron beam passing through the slit 3 with respect to the substrate 100 An electron lens 4 for controlling the position, an aperture 5 arranged on a path from which the electron beam is emitted, and a deflector for controlling the scanning position on the substrate 100 as a target by deflecting the electron beam 6 and a correction coil 7 for correcting deflection. These components are arranged in the lens barrel 8 and are kept in a vacuum state when the electron beam is emitted. Note that the electron gun 2 corresponds to the “electron beam emitting means” of the present invention. The deflector 6 corresponds to the “electron beam scanning means” of the present invention.
[0044]
Further, the electron beam writing apparatus 1 includes an XYZ stage 9 serving as a mounting table for mounting the substrate 100 on which an image is to be written, and a transport for transporting the substrate 100 to a mounting position on the XYZ stage 9. A loader 10 as a means, a measuring instrument 11 as a measuring means for measuring a reference point on the surface of the substrate 100 on the XYZ stage 9, and a stage driving device 12 as a driving means for driving the XYZ stage 9. A loader driving device 13 for driving the loader; a vacuum exhaust device 15 for exhausting the inside of the lens barrel 8 and the housing 14 including the XYZ stage 9 so as to be evacuated; and control means for controlling these components And a control circuit 20. The XYZ stage 9 corresponds to the “mounting means” of the present invention.
[0045]
The electronic lens 4 is controlled by generating a plurality of electronic lenses by the current value of each of the coils 4a, 4b, and 4c that are separately installed at a plurality of locations along the height direction, and is controlled by an electron beam. Is controlled.
[0046]
The measuring device 11 is a laser measuring device 11a that measures the base material 100 by irradiating the base material 100 with a laser, and the laser light emitted by the laser measuring device 11a reflects the base material 100 to reflect the laser light. And a light receiving section 11b for receiving the reflected light. The details will be described later.
[0047]
The stage driving device 12 includes an X-direction driving mechanism for driving the XYZ stage 9 in the X direction, a Y-direction driving mechanism for driving in the Y direction, a Z-direction driving mechanism for driving in the Z direction (the traveling direction of the electron beam), and a θ-direction driving mechanism that drives in the θ-direction. Thereby, the XYZ stage 9 can be operated three-dimensionally and alignment can be performed.
[0048]
The control circuit 20 includes an electron gun power supply unit 21 for supplying power to the electron gun 2, an electron gun control unit 22 for adjusting and controlling current, voltage, and the like in the electron gun power supply unit 21, and an electronic lens 4 (a plurality of And a lens control unit 24 for adjusting and controlling each current corresponding to each electronic lens in the lens power supply unit 23. .
[0049]
Further, the control circuit 20 includes a coil controller 25 for controlling the correction coil 7 and a deflecting unit for deflecting in the forming direction by the deflector 6 and for deflecting in the main scanning direction and the sub-scanning direction. 26, and a D / A converter 27 that converts and controls a digital signal into an analog signal in order to control the deflection unit 26.
[0050]
Further, the control circuit 20 corrects a position error in the deflector 6, that is, supplies a position error correction signal or the like to the D / A converter 27 to urge the position error correction, or prompts the coil control unit 25 to correct the position error. By supplying the signal to the correction circuit 7, a position error correction circuit 28 for correcting a position error by the correction coil 7, and the position error correction circuit 28 and the D / A converter 27 are controlled to reduce the electric field of the electron beam. An electric field control circuit 29 as electric field control means for controlling, and a pattern generation circuit 30 for generating a pattern shape or the like corresponding to the base material 100 are included.
[0051]
Further, the control circuit 20 includes a laser drive control circuit 31 for moving the laser irradiation position by moving the laser length measurement device 11a up and down, left and right, and driving control of the angle of the laser irradiation angle, and the like. A laser output control circuit 32 for adjusting and controlling the output (laser light intensity) of the laser irradiation light, and a measurement calculation unit 33 for calculating a measurement result based on a light reception result in the light receiving unit 11b. Be composed.
[0052]
Further, the control circuit 20 includes a stage control circuit 34 for controlling the stage drive device 12, a loader control circuit 35 for controlling the loader drive device 13, the above-described laser drive circuit 31, laser output control circuit 32, A mechanism control circuit 36 for controlling the section 33, a stage control circuit 34, and a loader control circuit 35; a vacuum exhaust control circuit 37 for controlling the vacuum exhaust of the vacuum exhaust device 15; A measurement information input unit 38 for inputting measurement information, a memory 39 serving as a storage unit for storing the input measurement information and other information, and a program memory 40 storing a control program for performing various controls And a control unit 41 configured by, for example, a CPU or the like which controls these units.
[0053]
(Drawing process)
In the electron beam lithography apparatus 1 having such a configuration, when the substrate 100 conveyed by the loader 10 is placed on the XYZ stage 9, the air in the lens barrel 8 and the housing 14 is removed by the vacuum exhaust device 15. After exhausting dust and the like, the electron gun 2 emits an electron beam.
[0054]
The electron beam emitted from the electron gun 2 is deflected by a deflector 6 through an electron lens 4 and is deflected by an electron beam B (hereinafter, only the deflection-controlled electron beam after passing through the electron lens 4 is referred to as " The electron beam B is sometimes referred to as “electron beam B”), and the drawing is performed by irradiating the surface of the substrate 100 on the XYZ stage 9, for example, the drawing position on the curved surface portion (curved surface) 100.
[0055]
(Drawing position adjustment processing)
However, before the drawing is performed, the measuring device 11 measures the drawing position on the base material 100 (at least the height position among the drawing positions) or the position of a reference point as described later, and controls the control circuit. Reference numeral 20 denotes a positional relationship between the electron gun and the mother optical surface 110a in the above-described <first drawing position adjustment step> and <second drawing position adjustment step>, that is, A process for correcting an error in a positional relationship between the base material 100 and the curved surface portion 100a is performed.
[0056]
Specifically, in the <first drawing position adjustment step>, the electron beam emitted from the electron gun 2 is emitted based on the three-dimensional coordinate positional relationship between the electron gun 2 and the curved surface portion 100a of the substrate 100. The control unit 41 controls the electric field control circuit 29 to correct the position error so that the light is irradiated to an appropriate position on the curved surface portion 100a of the base material 100 and is deflected in an appropriate direction by the deflector 6. The circuit 28 and the coil control unit 25 are controlled, and the error of the deflection position of the electron beam B is corrected by the correction coil 7. Alternatively, the stage drive circuit 12 is controlled by the stage control circuit 34 via the mechanism control circuit 36 to adjust the position of the XYZ stage 9.
[0057]
Also, in the <second drawing position adjustment step>, the electron gun 2 and the curved surface portion 100a of the base material 100 in the <first drawing position adjustment step> and the <second drawing position adjustment step> described above. Based on the positional relationship of the three-dimensional coordinates, the control unit 41 determines the positional relationship of the three-dimensional coordinates between the electron gun 2 and the curved surface portion 100a of the base material 100 in the <second drawing position adjusting step> by the < (1) Drawing position adjustment step>, a conversion formula for converting into a three-dimensional coordinate positional relationship between the electron gun 2 and the curved surface portion 100a of the base material 100 is obtained, and the electron beam emitted from the electron gun 2 is calculated according to the conversion formula. The electric field control circuit 29 controls the position error correction circuit 28 and the coil so that the laser beam is irradiated to an appropriate position on the curved surface 100a of the base material 100 and is deflected in an appropriate direction by the deflector 6. Controls the control unit 25 Te, performs error correction of the deflection position of the electron beam B by the correction coils 7. Alternatively, the stage drive circuit 12 is controlled by the stage control circuit 34 via the mechanism control circuit 36 to adjust the position of the XYZ stage 9. The control unit 41, the electric field control circuit 29, the position error correction circuit 28, the coil control unit 25, and the correction coil 7, or the control unit 41, the mechanism control circuit 36, the stage control circuit 34, and the stage driving device 12, The "position adjusting means" of the present invention is constituted.
[0058]
Then, based on the measurement result, the control circuit 20 controls the lens power supply unit 23 by the lens control unit 24 to adjust the current value flowing through the coils 4a, 4b, 4c and the like of the electronic lens 4 and the like. Is adjusted so that the focal position of the electron beam B matches the drawing position on the curved surface portion 100a of the base material 100. Alternatively, the stage control circuit 34 controls the stage driving device 12 to adjust the position of the XYZ stage 9 so that the focal position of the electron beam B matches the drawing position on the curved surface 100a of the substrate 100.
[0059]
As shown in FIG. 9, the electron beam has a deep depth of focus FZ, but the electron beam B narrowed down to the width D of the electron lens 4 has a beam waist BW having a substantially constant thickness. The length of the range of the beam waist BW in the electron beam traveling direction corresponds to the depth of focus FZ here. The focal position is a position of the beam waist BW in the electron beam advancing direction, and here is a center position of the beam waist BW in the electron beam advancing direction.
[0060]
(Measuring instrument)
Here, the measuring device 11 will be described with reference to FIG. As shown in FIG. 10, the measuring device 11 more specifically configures a first laser measuring device 11aa and a second laser measuring device 11ab that configure the laser measuring device 11a, and a light receiving section 11b. It has a first light receiving unit 11ba, a second light receiving unit 11bb, and the like.
[0061]
In such a configuration, the first laser beam is emitted from the first laser length measuring device 11aa to the substrate 100 in a direction crossing the electron beam, and the first light beam S1 is reflected by the flat portion 100b of the substrate 100. The first light intensity distribution is detected by receiving the one light beam S1.
[0062]
At this time, since the first light beam S1 is reflected by the flat portion 100b of the base material 100, the (height) position on the flat portion 100b of the base material 100 is measured based on the first intensity distribution. It will be calculated. Here, the height position indicates the position in the Z direction, ie, the traveling direction of the electron beam B.
[0063]
Further, the second laser length measuring device 11ab irradiates the substrate 100 with the second light beam S2 from a direction substantially orthogonal to the electron beam different from the first light beam S1, and transmits the second light beam S2 through the substrate 100. The second light intensity distribution is detected by receiving the second light beam S2 via the pinhole 11c included in the second light receiving unit 11bb.
[0064]
In this case, as shown in FIGS. 11A to 11C, the second light beam S2 is transmitted on the curved surface portion 100a of the base material 100, and therefore, based on the second intensity distribution, The (height) position on the curved surface portion 100a protruding from the flat portion 100b of the material 100 is measured and calculated.
[0065]
More specifically, as shown in FIGS. 11A to 11C, the second light beam S2 passes through a specific height at a certain position (x, y) on the curved surface portion 100a in the XY reference coordinate system. Then, at this position (x, y), the second light beam S2 impinges on the curved surface of the curved surface portion 100a to generate scattered lights SS1 and SS2, and the light intensity of the scattered light is weakened. In this way, the (height) position on the curved surface 100a is measured and calculated based on the second light intensity distribution detected by the second light receiving unit 11bb.
[0066]
In this calculation, the signal output of the second light receiving unit 11bb has a correlation between the signal output Op and the height of the base material 100 as shown in the characteristic diagram of FIG. By storing in advance a correlation table indicating this characteristic, that is, a correlation in 39 or the like, it is possible to calculate the height position of the base material based on the signal output Op from the second light receiving unit 11bb. .
[0067]
Then, using the height position of the base material 100 as a drawing position, for example, the focal position of the electron beam is adjusted and drawing is performed.
[0068]
(Overview of the principle of drawing position calculation)
Next, the principle of drawing position calculation in the electron beam drawing device 1 will be described.
[0069]
As shown in FIGS. 13A and 13B, the base material 100 includes a flat portion 100b and a curved surface portion 100a protruding from the flat portion 100b and forming a curved surface. The curved surface of the curved surface portion 100a is not limited to a spherical surface, and may be a free-form surface having a change in any other height direction, such as an aspheric surface.
[0070]
As described above, before the substrate 100 is placed on the XYZ stage 9, the position of the second mark 111b, for example, three reference points P00, P01, and P02 is measured by the shape measuring device 200. Keep it. Thereby, for example, the X axis is defined by the reference points P00 and P01, and the Y axis is defined by the reference points P00 and P02, and the first reference coordinate system in the three-dimensional coordinate system is calculated. Here, the height position in the first reference coordinate system is set to Ho (x, y) (first height position). Thereby, it is possible to calculate the height position distribution of the base material 2 and the error distribution from the design value.
[0071]
On the other hand, the same measurement is performed after the substrate 100 is placed on the XYZ stage 9. That is, as shown in FIG. 13A, the second mark 111b on the base material 100, for example, three reference points P10, P11, and P12 are determined, and the position is measured using the measuring device 11. Keep it. Thus, for example, the X axis is defined by the reference points P10 and P11, and the Y axis is defined by the reference points P10 and P12, and the second reference coordinate system in the three-dimensional coordinate system is calculated.
[0072]
Further, a coordinate transformation matrix for transforming the first reference coordinate system into the second reference coordinate system is calculated from the reference points P00, P01, P02 and P10, P11, P12, and this coordinate transformation matrix is calculated. The height position Hp (x, y) (second height position) corresponding to the Ho (x, y) in the second reference coordinate system is calculated using this position, and this position is calculated as the optimum focus position, That is, the focus position of the electron beam is controlled as the drawing position.
[0073]
More specifically, as shown in FIG. 13C, the focal position of the focal depth FZ of the electron beam (beam waist BW = the narrowest point of the beam diameter) is set to one field (unit field) in the unit space in the three-dimensional reference coordinate system. The drawing position within m = 1) is adjusted and controlled.
[0074]
Then, as shown in FIG. 13C, for example, one field is shifted in the Y direction and sequentially scanned in the X direction, whereby drawing in one field is performed. Further, if there is an area in which no image is drawn in one field, the area is moved in the Z direction while controlling the above-described focal position, and the same scanning process is performed.
[0075]
Next, after the drawing in one field is performed, in the other fields, for example, the field of m = 2 and the field of m = 3, the drawing processing is performed in real time while measuring and calculating the drawing position as described above. Will be performed. In this manner, when all the drawing is completed for the drawing area to be drawn, the drawing process on the surface of the base material 2 ends.
[0076]
It should be noted that a processing program for performing the above-described various arithmetic processing, measurement processing, control processing, and the like is stored in the program memory 40 as a control program in advance.
[0077]
(Control system)
Next, the configuration of a control system in the electron beam writing apparatus 1 will be described with reference to FIG.
[0078]
As shown in FIG. 14, a shape storage table 39a is stored in the memory 39. The shape storage table 39a stores the shapes constituting the pattern shape, for example, each scanning position of the electron beam when drawing a blaze. The dose distribution information 39aa in which the dose distribution (dose distribution), which is the irradiation amount corresponding to the laser beam, the beam diameter information 39ab in which the beam diameter corresponding to each scanning position of the blaze is similarly defined, and the above-described shape The measurement information from the measuring device, specifically, the base material shape information 39ac which is the three-dimensional coordinates of the base optical surface 110a of the base material 110 constituting the base material 100 and other information 39b are included. .
[0079]
Further, in the program memory 40, the control unit 41 performs a processing program 40a for performing a process described later, and a diffraction structure as a pattern shape based on the dose distribution information 39aa, for example, a pattern when a blaze annular zone is drawn. A dose calculation program 40b for setting a first dose amount and a second dose amount, and other processing programs 40c are stored.
[0080]
In such a configuration, the control unit 41 forms a pattern forming a pattern shape based on the dose distribution information 39aa stored in the shape storage table 39a of the memory 39 and the beam diameter information 161b according to the processing program 40a, for example, A dose corresponding to each scanning position of the blaze 300 shown in FIG. 15A is calculated, and a probe current, a scanning pitch, and a diameter of the electron beam B are calculated.
[0081]
Further, the pattern generation circuit 30 creates shape data of a diffraction structure as a pattern shape, for example, shape data of a blaze ring 300a (a ring of the blaze 300) shown in FIG.
[0082]
Further, the control unit 41, in accordance with the dose calculation program 40b, based on the dose distribution information 39aa stored in the shape storage table 39a of the memory 39, as will be described later, a diffraction structure as a pattern shape, for example, as shown in FIG. The first dose and the second dose for drawing the blazed orb zone 300a shown in FIG. Note that the control unit 41, the memory 39 (including the dose distribution information 39aa), and the program memory 40 (including the dose calculation program 40b) constitute the “irradiation amount setting unit” of the present invention.
[0083]
Further, the control unit 41 controls the electron gun control unit 22, the electric field control circuit 29, the lens control unit 24, the electric field control circuit 29, and the like according to the calculated probe current, scanning pitch, diameter and dose of the electron beam B. . As a result, the probe current, the scanning pitch, the diameter of the electron beam B, and the scanning speed of the electron beam at the time of writing are optimized, and the predetermined amount is determined at the first dose amount or the second dose amount. 15B, for example, an intermediate shape (first pattern shape) corresponding to the blaze ring zone 300a shown in FIG. 15B, or a second shape corresponding to the blaze ring zone 300a shown in FIG. 15B. The pattern shape is drawn. As a result, a blaze ring zone 300a shown in FIG. 15B is drawn. Note that the control unit 41 corresponds to “control means” of the present invention.
[0084]
Incidentally, the dose amount is adjusted by the electron gun control unit 22 controlling the electron gun power supply unit 21 under the instruction from the control unit 41 to adjust the current value or voltage value of the power supplied to the electron gun 2. Alternatively, under the direction of the control unit 41, the electric field control circuit 29 controls the D / A converter 27 to adjust the scanning speed of the electron beam B scanned by the deflection of the deflector 6. . These may be performed on both sides.
[0085]
(Details of the first and second dose setting steps)
Here, details of the setting of the dose amount performed by the control unit 41 will be described.
[0086]
The control unit 41 firstly, based on the dose distribution information 39aa stored in the shape storage table 39a of the memory 39, according to the dose calculation program 40b, forms a diffraction structure as a predetermined pattern shape on the curved surface portion 100a, for example, FIG. In order to draw the blazed orbicular zone 300a shown in B), the first dose for drawing the intermediate shape (first pattern shape) corresponding to the blazed orbicular zone 300a corresponds to the blaze orbicular zone 300a. A second dose amount for drawing the second pattern shape is set. As a result, a blaze ring zone 300a having a predetermined pattern shape is drawn as a result.
[0087]
Here, for example, when a predetermined dose amount for drawing the blazed orb zone 300a shown in FIG. 15B (dose amount when performing the drawing step and the developing step once as in the related art) is Dm, The control unit 41 sets the first dose amount D1 to D1 = Dm / 2. That is, assuming that the number of repetitions of the drawing process and the developing process is n, the control unit 41 sets the first dose amount D1 to D1 = Dm / n.
[0088]
As a result, in the first drawing process, 1/2 of the energy when the conventional dose amount Dm is given is stored in the inside of the curved surface portion 100a, that is, in the inside of the resist film.
[0089]
By the way, in the case of a positive resist film, its dissolution rate is represented by the following (Equation 1).
R = R 1 (C m + D / D 0 ) α ... (Equation 1)
Where R 1 Is the dissolution rate (〜0.1 n / s) when the dose is 0, m Is the development parameter (〜1), D is the amount of energy stored per unit volume in the resist film, and D is 0 Is the binding energy of the resist chain, and α is the development parameter () 1.5). By the way, C m Is usually 1 and α varies depending on the type of resist or the prescription in the developing step, but is generally 1.3 to 2.0.
[0090]
Here, as described above, when the first dose amount D1 is set to D1 = Dm / 2, the dissolution rate is, as apparent from (Equation 1), less than 1/2 of the conventional one. It becomes. Therefore, in the development step, it is necessary to accelerate the development until the intermediate shape is obtained by doubling the development time.
[0091]
At this time, the intermediate shape (first pattern shape) obtained after the development processing is given a dose amount Dm for drawing the blazed orb zone 300a on the curved surface portion 100a, thereby reducing the development time by half, and And the same shape as when
[0092]
However, there is a difference between these two in terms of the amount of energy stored in a portion that has not yet been developed, and the amount of stored energy is は of that of the latter. Therefore, when a portion that has not been developed is developed by giving the second dose amount D2, a predetermined shape can be obtained without excessively increasing the dissolution rate.
[0093]
The effect is shown in FIGS. Here, FIG. 16A shows the shape of the blaze 300 when the drawing step and the developing step are performed once as usual, and the dotted line shown in FIG. 16A shows the ideal shape. FIG. 16B shows the shape of the blaze 300 when the drawing step and the developing step are performed once, and the solid line shown in FIG. 16B indicates the case where the drawing step and the developing step are performed twice. Of the blaze 300 is shown. Also, the dotted line shown in the figure shows the ideal shape.
[0094]
As shown in FIG. 16A, when the drawing step and the development step are performed once as usual, the shape of the groove 300c of the blaze 300 is rounded and may be significantly different from the ideal shape. I understand. On the other hand, as shown in FIG. 16B, when the drawing step and the developing step are performed twice, the shape of the groove 300c of the blaze 300 is suppressed from being rounded, and is closer to the ideal shape. You can see that.
[0095]
As described above, when the drawing step and the developing step are performed in two steps, the amount of energy accumulated inside the curved surface portion 100a can be suppressed, so that the influence of internal scattering of the electron beam can be reduced. As a result, the degree to which the groove 300c of the blaze 300 is rounded can be suppressed, and a more ideal shape can be obtained, that is, the blaze orb 300a in which predetermined optical performance can be obtained can be drawn.
[0096]
Incidentally, the energy absorption amount of electrons inside the curved surface portion 100a, that is, inside the resist film can be expressed by the following (Equation 2).
dE / ds = -2πe 4 ρN A / E @ C i [Z i log (1.66E i / I i )] / A i } (Equation 2)
Where E is the energy of the electrons, s is the time, ρ is the resist density, N A Is Avogadro's constant, and C i Is the content of each atom constituting the resist, and Z i Is the atomic number and E i Is the energy of the electron when the atom is encountered, i Is the ionization energy, A i Is the number of its atoms.
[0097]
Incidentally, the energy E of the electron when the atom is encountered i May be the electron energy E, but the resist is constituted by containing a certain ratio of atoms such as C, O, H, and N, and from the establishment of their existence, Here, since the absorption is affected in relation to the totalized ionization energy for each atom, the energy of the electron at the time of the encounter for each atom is expressed as E i And
[0098]
On the other hand, the energy of the electron beam when drawing the above-mentioned curved surface portion 100a is about 30 KeV to 100 KeV, the thickness of the resist film is about 0.5 to 2 μm, and the irradiation area of the electron beam is several μm 2 As described above, the electrons are scattered inside the resist film with much larger energy than the ionization energy.
[0099]
Therefore, the energy absorption amount dE / ds of the electrons inside the resist film is expressed by (2πe 4 ρN A / E) becomes dominant, and inside the resist film, the lower the energy of the electrons, the more easily the electrons are absorbed. Therefore, the energy absorption amount dE / ds of electrons inside the resist film increases as it goes inside the resist film.
[0100]
In view of this, when performing the second writing, it is necessary to give an optimum dose in consideration of the amount of energy already accumulated inside the resist film by the first writing. At this time, since the electron beam is applied to the portion where the intermediate shape (first pattern shape) has already been formed, the thickness of the resist film which gives a dose by the second drawing is the same as that of the first drawing. In this case, the influence of the proximity effect due to scattering inside the resist film is reduced.
[0101]
On the other hand, in order to accumulate the same amount of energy as in the first drawing, it is necessary to set a value larger than Dm / 2 from the above (Equation 2). The dose amount D2 is set as D2> Dm / 2.
[0102]
As described above, when the drawing step and the developing step are performed in two steps, the thickness of the resist film at the time of performing the second drawing can be reduced. By reducing the degree, the degree of the roundness of the groove 300c of the blaze 300 can be suppressed, and a more ideal predetermined pattern shape, that is, a blaze ring zone 300a that obtains a predetermined optical performance can be drawn. it can.
[0103]
[Mold manufacturing method]
Next, a method of manufacturing the mold will be described with reference to FIG. 4 along the flow of the flowchart shown in FIG.
[0104]
<Electroforming process>
As shown in FIG. 3, the matrix, the surface of which has been activated, ie, the member E, is further immersed in a nickel sulfamate bath, and an electric current is caused to flow between the base material 111 and the external electrode 114, whereby The cast 120 is grown (see FIG. 4F) (Step S38). At this time, by applying an insulating agent to the outer peripheral surface 111f of the base material 111, it is possible to suppress the electroforming of the portion where the insulating agent is applied. In the course of its growth, the electroforming 120 forms an optical surface transfer surface 120a accurately corresponding to the mother optical surface 110a and an orbicular transfer surface 120b corresponding to the blaze diffraction orb 110b with high accuracy.
[0105]
Thereafter, a database built in a computer (not shown) is searched based on the ID number NX of the yat 150 corresponding to the member E being processed, and the obtained yatoy 150 (that is, used in the cutting process) is obtained. Is attached to the member E (base material 111) under predetermined attachment conditions (step S39). The predetermined attachment condition is the attachment condition in the first step, and more specifically, matching the matching mark MX to match the phase of the base material 111 and the toy 150, and the read-out work environment temperature during tightening ( A working environment temperature of ± 1.0 degrees with respect to the working environment temperature in the first step, tightening with the read tightening torque (tightening torque in the cutting step), and using the same bolt 152 Mounting.
[0106]
Further, after the working environment temperature at the time of cutting of the member E being processed is stored in a database constructed in a computer (not shown), the member E and the electroformed And the toy 150 are integrally attached to the chuck so that the rotation axis of the SPDT processing machine and the optical axis of the member E coincide with each other, and the outer peripheral surface 120c of the electroforming 120 is cut (see FIG. 4 (g)). (Step S40).
[0107]
In addition, as shown in FIG. 4 (g), a pin hole 120d (center) and a screw hole 120e as a positioning portion for a backing member are formed in the electroformed 120. Note that a cylindrical shaft may be formed instead of the pin hole 120d. After the processing, the member E, the electroforming 120 and the toy 150 are integrally removed from the SPDT processing machine.
[0108]
Further, the movable core 130 is formed by integrating the electroforming 120 with the backing member as described below (Step S41).
[0109]
FIG. 17 is a cross-sectional view of the movable core 130 in a state where the member E is attached. In FIG. 17, the movable core 130 includes an electroformed part 120 disposed at the front end (right side in the figure), a pressing part 136 disposed at the rear end (left side in the figure), and a sliding member 135 disposed therebetween. Is done. The sliding member 135 and the pressing portion 136 serve as a backing member.
[0110]
The electroforming 120 is positioned in a predetermined relationship with the sliding member 135 by engaging a pin 135a protruding from the center of the end surface of the cylindrical sliding member 135 into the pin hole 120d, and The bolt 137 inserted into the two bolt holes 135b penetrating the member 135 in parallel with the axis is screwed into the screw hole 120e, so that the electroforming 120 is attached to the sliding member 135.
[0111]
The sliding member 135 is provided with a screw shaft 135c formed at the center of an end surface (the left end in the figure) facing the end surface (the right end in the figure) provided with the pin portion 135a, and the end of the substantially cylindrical pressing portion 136. By being screwed into a screw hole 136a formed in the portion, it is attached to the pressing portion 136 in a predetermined positional relationship. In FIG. 17, the outer peripheral surface 135 e of the sliding member 135 has a larger diameter than the outer peripheral surface of a portion other than the flange portion 136 b of the electroforming 120 and the pressing portion 136. After attaching the sliding member 135 and the pressing portion 136 as the backing member, the jaws 150 are attached to the chuck of the SPDT processing machine (step S42).
[0112]
Further, after setting the working environment temperature at the time of cutting of the member E being processed from a database constructed in a computer (not shown), the sliding member 135 and the pressing portion 136 are determined with reference to the outer peripheral surface 111f of the base material 111. Finish the outer peripheral surface (step S43). For this reason, despite the fact that the toy 150 has been once removed from the base material 111, the coaxiality between the center of the concentric pattern (blade diffraction ring zone 110b) of the mother die 110 and the center of the outer shape of the die sliding portion is within 1 μm. Can fit. Further, the end face of the pressing portion 136 is cut to set the entire length to a specified value (step S44).
[0113]
Then, the member E and the toy 150 are removed from the electroformed part 120 attached to the sliding member 135 and the pressing part 136 by cutting at a position indicated by an arrow X in FIG. 17 (step S45). Further, after the electroforming 120 and the substrate 210 are removed from the mold, the electroforming 120 at the tip of the movable core 130 is finished to obtain an optical element molding die (step S46).
[0114]
By the steps so far. An optical element molding die is manufactured.
[0115]
[Manufacture of optical element]
FIG. 18 is a diagram illustrating a state in which an optical element is molded using the movable core 130 formed as described above. In FIG. 18, a holding portion 142 that holds an optical element molding die 141 having an optical surface transfer surface 141 a is fixed to a movable side cavity 143. The movable cavity 143 has a small opening 143a and a large opening 143b coaxial with the small opening. When the movable core 130 is inserted into the movable side cavity 143, the outer peripheral surface 135e of the sliding member 135 slides on the inner peripheral surface of the small opening 143a, and the outer peripheral surface 136d of the flange portion 136b of the pressing portion 136 is It slides on the inner peripheral surface of the large opening 143b. By being guided by the two sliding portions, the movable core 130 can move in the axial direction without largely tilting with respect to the movable side cavity 143.
[0116]
The molten resin is injected between the optical element molding die 141 and the electroforming 120, and the movable core 130 is pressed in the direction of the arrow, whereby the optical element OE is molded. According to the present embodiment, by using electroforming 120 as an optical element molding die accurately transferred and formed from base material 110, the optical surface of electroforming The surface transfer surface 120a is transferred and formed, and the diffraction ring corresponding to the ring transfer surface 120b is formed with high accuracy concentrically on the optical axis.
[0117]
By the steps so far. An optical element is manufactured.
[0118]
When the optical element molding die is processed as described above, a projection (not shown) corresponding to the second mark 111b is transferred and formed on the electroforming 120, and this is used as a processing reference. By using this, it is possible to perform highly accurate processing of the outer peripheral surface and the like.
[0119]
As described above, according to the method of manufacturing a matrix according to the present embodiment, by performing the drawing step and the developing step in two steps, the influence of internal scattering of the electron beam is reduced, and the predetermined step is performed. It can be formed by drawing a diffractive structure that provides optical performance.
[0120]
Although one embodiment of the present invention has been described, the present invention is not limited to the above-described embodiment. For example, the drawing step and the developing step may be performed three or more times. May be.
[0121]
In addition, for example, the measurement information from the shape measuring device 200 is input from the measurement information input unit 158 of the electron beam writing apparatus 1, and data is transferred via a network (not shown) connected to the control circuit 20. It may be stored in the memory 39 or the like.
[0122]
Further, for example, the shape measurement of the member E, that is, the measurement of the three-dimensional coordinates of the mother optical surface 110a of the master mold material 110 is performed not by the shape measuring device 200 but by the measuring device 11 of the electron beam writing apparatus 1. You may do it.
[0123]
【The invention's effect】
As described above, according to the method for manufacturing a matrix according to the present invention, it is possible to draw and form a diffractive structure capable of obtaining predetermined optical performance by reducing the influence of internal scattering of an electron beam. it can.
[Brief description of the drawings]
FIG. 1 is a flowchart showing steps constituting a method for manufacturing a mother die and a method for manufacturing a mold in the present embodiment.
FIG. 2 is a flowchart showing steps constituting a method for manufacturing a mother die and a method for manufacturing a mold in the present embodiment.
FIG. 3 is a flowchart showing steps constituting a method for manufacturing a mother die and a method for manufacturing a mold in the present embodiment.
FIG. 4 is a cross-sectional view showing an assembly of a matrix material and an electrode member, that is, a member E, to be processed in the main steps shown in FIGS. 1 to 3;
FIG. 5 is a perspective view of a member E to which a yatoy is attached.
6 is a top view of the member E shown in FIG.
FIG. 7 is an explanatory diagram showing an overall configuration of a shape measuring instrument.
FIG. 8 is an explanatory diagram showing an overall configuration of an electron beam writing apparatus.
FIG. 9 is an explanatory diagram for explaining a beam waist of an electron beam.
FIG. 10 is an explanatory diagram for explaining the overall configuration of a measuring instrument.
FIG. 11 is an explanatory diagram for explaining the measurement principle of the measuring instrument.
FIG. 12 is a characteristic diagram showing a relationship between a signal output and a height of a base material.
FIGS. 13A and 13B are explanatory views showing a substrate to be drawn by an electron beam drawing apparatus, and FIG. 13C is a view for explaining a drawing principle of the electron beam drawing apparatus; FIG.
FIG. 14 is an explanatory diagram showing a configuration of a control system of the electron beam writing apparatus.
FIG. 15 is an explanatory diagram for explaining a process in which a blazed orb is drawn on a curved surface portion of a base material.
FIG. 16A is an explanatory view showing the shape of a blaze when a drawing step and a development step are performed once, and FIG. 16B is a view showing the drawing step and the development step performed twice; FIG. 3 is an explanatory diagram showing a shape of a blaze in the case (a shape of a solid line).
FIG. 17 is a sectional view of a movable core.
FIG. 18 is a diagram illustrating a state in which an optical element is molded using a movable core.
[Explanation of symbols]
30 Pattern generation circuit
39 memory
39a Shape memory table
39aa dose distribution information
39ab beam diameter information
39ac base material shape information
39b Other information
40 program memory
40a processing program
40b dose calculation program
40c Other processing programs
41 Control unit
100 base material
100a Curved surface
110 Matrix material
110a Mother optical surface
300 Blaze
300c groove
300a braze ring

Claims (13)

  1. By irradiating the base material with an electron beam and scanning the electron beam so that the irradiation amount becomes a predetermined irradiation amount, an optical element that forms a predetermined pattern shape on the base material is formed. A method of manufacturing a matrix for manufacturing a mold for a mold,
    A first dose setting step of setting a first dose smaller than the predetermined dose;
    A first drawing step of drawing a first pattern shape corresponding to the predetermined pattern shape on the base material at the first irradiation dose;
    A first development step of developing the substrate on which the first pattern shape is drawn,
    A second dose setting step of setting a second dose smaller than the predetermined dose;
    By developing the substrate on which the first pattern shape is drawn, the second irradiation amount corresponds to the predetermined pattern shape on the substrate on which the first pattern shape is formed. A second drawing step of drawing a second pattern shape;
    A second developing step of developing the base material on which the second pattern shape is drawn, the method comprising:
  2. In the first dose setting step, the first dose is adjusted to half of the predetermined dose,
    2. The method according to claim 1, wherein, in the second dose setting step, the second dose is adjusted to be larger than half of the predetermined dose. 3.
  3. Before the first drawing step,
    A first mounting step of mounting the base material on a mounting table,
    A first drawing position adjusting step of detecting a position of an alignment mark provided on a base material placed on the mounting table, and adjusting a positional relationship between the base material and an emission position of the electron beam. ,
    Before the second drawing step,
    A second mounting step of mounting the substrate having the first pattern shape on the mounting table,
    The position of an alignment mark provided on the substrate having the first pattern shape mounted on the mounting table is detected, and the substrate having the first pattern shape and the emission position of the electron beam are detected. A second writing position adjusting step of adjusting the scanning position of the electron beam so that the positional relationship of the electron beam becomes the same as the positional relationship between the substrate and the emission position of the electron beam in the first writing step. The method for manufacturing a matrix according to claim 1 or 2, further comprising:
  4. The method according to claim 1, wherein the predetermined pattern shape is a blaze shape.
  5. The method for manufacturing a matrix according to any one of claims 1 to 4, wherein the drawing surface of the base material has a curved surface shape.
  6. 6. The method according to claim 1, further comprising an etching step of obtaining a matrix having a predetermined structure by performing an etching process on the base material on which the second pattern shape is formed. 7. A method for producing a matrix according to claim 1.
  7. A mother die manufactured by the method for manufacturing a mother die according to any one of claims 1 to 6.
  8. A method for manufacturing a mold, comprising: performing an electroforming process using the master mold according to claim 7 to obtain a mold on which the predetermined structure is transferred.
  9. A mold manufactured by the method for manufacturing a mold according to claim 8.
  10. An optical element formed by the mold according to claim 9.
  11. By irradiating the base material with an electron beam and scanning the electron beam so that the irradiation amount becomes a predetermined irradiation amount, an electron beam drawing apparatus that draws a predetermined pattern shape on the base material So,
    Electron beam emitting means for emitting the electron beam,
    Electron beam scanning means for scanning by deflecting the electron beam emitted by the electron beam emission means,
    A first irradiation amount of the electron beam for drawing a first pattern shape corresponding to the predetermined pattern shape on the base material based on the predetermined pattern shape; The electron beam for drawing a second pattern shape corresponding to the predetermined pattern shape on the base material on which the first pattern shape is formed by developing the base material on which is drawn A dose setting means for setting the dose of 2;
    By controlling the emission amount of the electron beam emitted by the electron beam emission unit and / or the scanning speed of the electron beam scanned by the electron beam scanning unit, the base amount can be adjusted at the first irradiation amount. Control means for drawing the first pattern shape on a material and drawing the second pattern shape on a substrate having the first pattern shape at the second irradiation dose. An electron beam drawing apparatus characterized by the above-mentioned.
  12. The irradiation amount setting means,
    Setting the first dose to half of the predetermined dose,
    The electron beam writing apparatus according to claim 11, wherein the second irradiation amount is set to be larger than half of the predetermined irradiation amount.
  13. Mounting means for mounting the base material,
    When the first pattern shape is drawn, a first position of an alignment mark provided on a base material placed on the mounting table is detected, and the base material and the emission position of the electron beam are detected. And, when drawing the predetermined pattern shape, the second position of the alignment mark provided on the substrate having the first pattern shape mounted on the mounting table. The positional relationship between the base material having the first pattern shape and the emission position of the electron beam is detected, and the positional relationship between the base material and the emission position of the electron beam when drawing the first pattern shape is determined. 13. The electron beam writing apparatus according to claim 11, further comprising a position adjusting unit that adjusts a scanning position of the electron beam so as to have the same positional relationship.
JP2003094478A 2003-03-31 2003-03-31 Method for manufacturing mother die, mother die, method for manufacturing mold, mold, optical element and electron beam drawing apparatus Pending JP2004302090A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007003777A (en) * 2005-06-23 2007-01-11 Dainippon Printing Co Ltd Method of manufacturing diffraction optical element
JP2010224544A (en) * 2005-11-04 2010-10-07 Orc Mfg Co Ltd Laser beam exposure apparatus and method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007003777A (en) * 2005-06-23 2007-01-11 Dainippon Printing Co Ltd Method of manufacturing diffraction optical element
JP4593385B2 (en) * 2005-06-23 2010-12-08 大日本印刷株式会社 Method for producing diffractive optical element
JP2010224544A (en) * 2005-11-04 2010-10-07 Orc Mfg Co Ltd Laser beam exposure apparatus and method therefor

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