JP2004282030A - 薄膜トランジスタ及びこれを備えた平板表示素子 - Google Patents
薄膜トランジスタ及びこれを備えた平板表示素子 Download PDFInfo
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- JP2004282030A JP2004282030A JP2004008469A JP2004008469A JP2004282030A JP 2004282030 A JP2004282030 A JP 2004282030A JP 2004008469 A JP2004008469 A JP 2004008469A JP 2004008469 A JP2004008469 A JP 2004008469A JP 2004282030 A JP2004282030 A JP 2004282030A
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- aluminum
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- titanium nitride
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- 239000010409 thin film Substances 0.000 title claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000010936 titanium Substances 0.000 claims abstract description 37
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 37
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 19
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 230000002265 prevention Effects 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 229910000676 Si alloy Inorganic materials 0.000 claims description 5
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910010038 TiAl Inorganic materials 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical class [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- AGVJBLHVMNHENQ-UHFFFAOYSA-N Calcium sulfide Chemical class [S-2].[Ca+2] AGVJBLHVMNHENQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- XSBJUSIOTXTIPN-UHFFFAOYSA-N aluminum platinum Chemical compound [Al].[Pt] XSBJUSIOTXTIPN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】ソース電極、ドレーン電極、ゲート電極及び半導体層を備えた薄膜トランジスタ(TFT)であって、前記ソース電極、ドレーン電極及びゲート電極のうち何れか一つはアルミニウム系金属層、チタン層及びこれら間に介在された拡散防止層を備えたことを特徴とするTFTである。これにより、熱処理工程によるTiAl3の発生が抑制されて十分に低い抵抗を有するTFT導電要素を備えて、画素の応答速度及び画質が向上する。
【選択図】図6
Description
132、133 チタン層
134、135 拡散防止層
Claims (20)
- ソース電極、ドレーン電極、ゲート電極及び半導体層を備えた薄膜トランジスタにおいて、
前記ソース電極、ドレーン電極及びゲート電極のうち何れか一つはアルミニウム系金属層、チタン層及びこれら間に介在された拡散防止層を備えたことを特徴とする薄膜トランジスタ。 - 前記アルミニウム系金属層の両面には、前記拡散防止層とチタン層とが順に形成されたことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記拡散防止層は、窒化チタンよりなる窒化チタン層であることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記窒化チタン層には、15重量%ないし35重量%の窒素が含まれたことを特徴とする請求項3に記載の薄膜トランジスタ。
- 前記窒化チタン層は、約100Åないし600Åの厚さを有することを特徴とする請求項3に記載の薄膜トランジスタ。
- 前記窒化チタン層は、約100Åないし400Åの厚さを有することを特徴とする請求項5に記載の薄膜トランジスタ。
- 前記窒化チタン層は、約200Åないし400Åの厚さを有することを特徴とする請求項6に記載の薄膜トランジスタ。
- 前記窒化チタン層は、約300Åの厚さを有することを特徴とする請求項7に記載の薄膜トランジスタ。
- 前記アルミニウム系金属層は、シリコン、銅、ネオジム、白金、またはニッケルのうち選択された一元素を約1重量%ないし5重量%程度含むアルミニウム合金よりなることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記アルミニウム系金属層は、シリコンを約2重量%程度含むアルミニウムシリコン合金よりなることを特徴とする請求項9に記載の薄膜トランジスタ。
- ソース電極、ドレーン電極、ゲート電極及び半導体層を備えた薄膜トランジスタによって駆動されるサブピクセルを有する平板表示素子において、
前記ソース電極、ドレーン電極及びゲート電極のうち何れか一つは、アルミニウム系金属層、チタン層及びこれら間に介在された拡散防止層を備えたことを特徴とする薄膜トランジスタ。 - 前記アルミニウム系金属層の両面には、前記拡散防止層とチタン層とが順に形成されたことを特徴とする請求項11に記載の平板表示素子。
- 前記拡散防止層は、窒化チタンよりなる窒化チタン層であることを特徴とする請求項11に記載の平板表示素子。
- 前記窒化チタン層には、15重量%ないし35重量%の窒素が含まれたことを特徴とする請求項13に記載の平板表示素子。
- 前記窒化チタン層は、約100Åないし600Åの厚さを有することを特徴とする請求項13に記載の平板表示素子。
- 前記窒化チタン層は、約100Åないし400Åの厚さを有することを特徴とする請求項15に記載の平板表示素子。
- 前記窒化チタン層は、約200Åないし400Åの厚さを有することを特徴とする請求項16に記載の平板表示素子。
- 前記窒化チタン層は、約300Åの厚さを有することを特徴とする請求項17に記載の平板表示素子。
- 前記アルミニウム系金属層は、シリコン、銅、ネオジム、白金、またはニッケルのうち選択された一元素を約1重量%ないし5重量%程度含むアルミニウム合金よりなることを特徴とする請求項11に記載の平板表示素子。
- 前記アルミニウム系金属層は、シリコンを約2重量%程度含むアルミニウムシリコン合金よりなることを特徴とする請求項19に記載の平板表示素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20030015356 | 2003-03-12 | ||
KR1020030063583A KR100553747B1 (ko) | 2003-03-12 | 2003-09-15 | 박막트랜지스터 및 이를 구비한 평판표시소자 |
Publications (2)
Publication Number | Publication Date |
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JP2004282030A true JP2004282030A (ja) | 2004-10-07 |
JP4038485B2 JP4038485B2 (ja) | 2008-01-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004008469A Expired - Lifetime JP4038485B2 (ja) | 2003-03-12 | 2004-01-15 | 薄膜トランジスタを備えた平板表示素子 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7317206B2 (ja) |
EP (1) | EP1458029A3 (ja) |
JP (1) | JP4038485B2 (ja) |
CN (1) | CN100419550C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7683370B2 (en) | 2005-08-17 | 2010-03-23 | Kobe Steel, Ltd. | Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4038485B2 (ja) * | 2003-03-12 | 2008-01-23 | 三星エスディアイ株式会社 | 薄膜トランジスタを備えた平板表示素子 |
US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
JP4650224B2 (ja) * | 2004-11-19 | 2011-03-16 | 日亜化学工業株式会社 | 電界効果トランジスタ |
KR100774950B1 (ko) * | 2006-01-19 | 2007-11-09 | 엘지전자 주식회사 | 전계발광소자 |
US7781767B2 (en) * | 2006-05-31 | 2010-08-24 | Kobe Steel, Ltd. | Thin film transistor substrate and display device |
US9419181B2 (en) | 2013-05-13 | 2016-08-16 | Infineon Technologies Dresden Gmbh | Electrode, an electronic device, and a method for manufacturing an optoelectronic device |
CN103779358A (zh) * | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
US9548349B2 (en) | 2014-06-25 | 2017-01-17 | International Business Machines Corporation | Semiconductor device with metal extrusion formation |
US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
CN105140199B (zh) * | 2015-08-11 | 2018-06-29 | 上海华虹宏力半导体制造有限公司 | 顶层金属薄膜结构以及铝制程工艺方法 |
KR20190043194A (ko) * | 2017-10-17 | 2019-04-26 | 삼성디스플레이 주식회사 | 금속 배선 및 이를 포함하는 박막 트랜지스터 |
KR102554830B1 (ko) | 2018-10-04 | 2023-07-13 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20200089789A (ko) * | 2019-01-17 | 2020-07-28 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20200100890A (ko) * | 2019-02-18 | 2020-08-27 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
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2004
- 2004-01-15 JP JP2004008469A patent/JP4038485B2/ja not_active Expired - Lifetime
- 2004-01-28 EP EP04250453A patent/EP1458029A3/en not_active Ceased
- 2004-01-29 US US10/766,564 patent/US7317206B2/en not_active Expired - Lifetime
- 2004-03-12 CN CNB2004100399427A patent/CN100419550C/zh not_active Expired - Lifetime
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2005
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US7683370B2 (en) | 2005-08-17 | 2010-03-23 | Kobe Steel, Ltd. | Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices |
Also Published As
Publication number | Publication date |
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CN1530726A (zh) | 2004-09-22 |
JP4038485B2 (ja) | 2008-01-23 |
CN100419550C (zh) | 2008-09-17 |
US20050072973A1 (en) | 2005-04-07 |
EP1458029A2 (en) | 2004-09-15 |
US20050285109A1 (en) | 2005-12-29 |
US7317206B2 (en) | 2008-01-08 |
EP1458029A3 (en) | 2006-03-15 |
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