JP2004165186A - Resin supply method and system thereof - Google Patents

Resin supply method and system thereof Download PDF

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Publication number
JP2004165186A
JP2004165186A JP2002325683A JP2002325683A JP2004165186A JP 2004165186 A JP2004165186 A JP 2004165186A JP 2002325683 A JP2002325683 A JP 2002325683A JP 2002325683 A JP2002325683 A JP 2002325683A JP 2004165186 A JP2004165186 A JP 2004165186A
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Japan
Prior art keywords
resin
surface
plasma
object
resin supply
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002325683A
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Japanese (ja)
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JP3931793B2 (en
Inventor
Koji Sawada
Tetsuji Shibata
Keiichi Yamazaki
圭一 山崎
哲司 柴田
康志 澤田
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Matsushita Electric Works Ltd
松下電工株式会社
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Priority to JP2002325683A priority Critical patent/JP3931793B2/en
Publication of JP2004165186A publication Critical patent/JP2004165186A/en
Application granted granted Critical
Publication of JP3931793B2 publication Critical patent/JP3931793B2/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743Apparatus for manufacturing layer connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743Apparatus for manufacturing layer connectors

Abstract

Provided is a resin supply method that makes it difficult to supply a resin to a portion where a resin is not required, and that can improve adhesion and adhesion between the resin and a portion where the resin is required.
The apparatus includes a reaction vessel (2) having one side opened as an outlet (1) and a plurality of electrodes (3, 4). By applying a voltage between the electrodes 3 and 4, a discharge is generated in the reaction vessel 2 under a pressure near the atmospheric pressure to generate a plasma 5. The plasma 5 generated in the reaction vessel 2 is blown out from the blow-out port 1 to supply the plasma 5 to the surface of the processing target 6 so that the surface of the processing target 6 has a surface compatible with the resin 7. I do. The resin 7 is supplied to the surface of the workpiece 6 having an affinity with the resin 7. The resin 7 does not flow or flow into unnecessary parts.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a resin supply method and a resin supply system used for bonding or sealing electronic components such as a semiconductor chip and an optical module to a holding member such as a circuit board.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, an electronic component such as a semiconductor chip mounted on a circuit board has been sealed with a liquid resin, and a potting apparatus including a tubular container (syringe) is used for applying the liquid resin for sealing. (For example, see Patent Document 1). When applying a conductive resin such as a conductive paste to a circuit board or supplying an adhesive for attaching and fixing an optical component such as an optical pickup (optical module) to a circuit board or a holding member. The same potting device as described above is used.
[0003]
[Patent Document 1]
JP-A-2000-114288 (claims, etc.)
[0004]
[Problems to be solved by the invention]
When supplying a resin such as a liquid resin, a conductive resin, or an adhesive as described above, it is important that the resin is supplied only to a necessary portion and that the resin is not supplied to other unnecessary portions. It is. That is, for example, in a circuit board on which electronic components and optical components are mounted, when a resin such as a liquid resin for sealing or an adhesive flows and is supplied to an unnecessary portion, the resin enters between the circuits and a conduction failure occurs. Or the opaque liquid resin for sealing may adhere to the optical components, deteriorating the optical characteristics. However, there is a risk that the insulating material may enter between circuits and cause insulation failure. Therefore, measures have been taken to prevent the resin from flowing to unnecessary parts by changing the viscosity by changing the composition of the resin, etc. And the adhesiveness may be reduced.
[0005]
The present invention has been made in view of the above points, and it is difficult to supply a resin to a portion where a resin is not required, and it is possible to enhance the adhesion and adhesion between the resin and a portion where the resin is required. It is an object to provide a resin supply method and a resin supply system.
[0006]
[Means for Solving the Problems]
The resin supply method according to claim 1 of the present invention includes a reaction container 2 having one side opened as a blowout port 1 and a plurality of electrodes 3 and 4, and applies a voltage between the electrodes 3 and 4. As a result, a discharge is generated in the reaction vessel 2 at a pressure close to the atmospheric pressure to generate the plasma 5, and the plasma 5 generated in the reaction vessel 2 is blown out from the blowout port 1, so that the surface of the workpiece 6 is discharged. After supplying the plasma 5 to the surface of the object 6 to be treated so as to have an affinity with the resin 7, the resin 7 is supplied to the surface of the object 6 having an affinity with the resin 7. It is characterized by the following.
[0007]
A resin supply method according to a second aspect of the present invention is characterized in that, in addition to the first aspect, the method of supplying the resin 7 includes discharging the resin 7 for a predetermined time by air pressure. By discharging the resin 7 by air pressure onto the surface of the workpiece 6 which has been subjected to the surface treatment (plasma treatment), the resin 7 can be applied to fine irregularities on the surface of the workpiece 6 formed of resin or the like. And the adhesion of the resin 7 is improved.
[0008]
The resin supply method according to claim 3 of the present invention is characterized in that, in addition to claim 1 or 2, the outlet 1 of the reaction vessel 2 is substantially circular and has an average inner diameter of 0.1 to 20 mm. Is what you do.
[0009]
A resin supply method according to a fourth aspect of the present invention, in addition to any one of the first to third aspects, supplies the plasma 5 to the surface of the processing object 6 and combines with the resin 7 on the surface of the processing object 6. By forming a functional group, the surface of the processing object 6 is brought into a state having affinity with the resin 7.
[0010]
In the resin supply method according to claim 5 of the present invention, in addition to claim 4, the functional group that binds to the resin 7 includes MO, M-OH (M is a metal or an inorganic element), -OCOO-,- It is characterized by being at least one selected from COO-, -C = O and -CO-.
[0011]
The resin supply method according to claim 6 of the present invention is characterized in that, in addition to any one of claims 1 to 5, the resin 7 is an adhesive.
[0012]
A resin supply method according to claim 7 of the present invention is characterized in that, in addition to any one of claims 1 to 5, the resin 7 is a sealing material.
[0013]
The resin supply method according to claim 8 of the present invention is characterized in that, in addition to any one of claims 1 to 7, the resin 7 is supplied to the surface of the workpiece 6 immediately after the surface treatment. .
[0014]
A resin supply system according to a ninth aspect of the present invention is a resin supply system using the resin supply method according to any one of the first to eighth aspects. A plasma processing apparatus 8 for surface-treating the surface of the processing object 6 so as to have an affinity with the resin 7, and supplying the resin 7 to the surface of the processing object 6 in which the affinity state with the resin 7 is maintained. And a resin supply device 9.
[0015]
A resin supply system according to a tenth aspect of the present invention provides the resin supply system according to the ninth aspect, in which a plurality of electrodes 3 and 4 are provided outside the reaction vessel 2 formed of an insulating material as the plasma processing apparatus 8 and the reaction vessel 2 is provided. By forming a space between the electrodes 3 and 4 in the inside as a discharge space 13 and supplying a gas for plasma generation to the discharge space 13 and applying a voltage between the electrodes 3 and 4, the discharge space 13 has a pressure near the atmospheric pressure. A discharge is generated under pressure, and the plasma 5 generated by the discharge is blown out of the discharge space 13.
[0016]
The resin supply system according to claim 11 of the present invention, in addition to claim 9 or 10, supplies the plasma 5 to the surface of the workpiece 6 by moving the plasma processing apparatus 8 and follows the plasma processing apparatus 8 Then, the resin supply device 9 is moved to supply the resin 7 to the surface-treated portion of the workpiece 6.
[0017]
The resin supply system according to claim 12 of the present invention provides the resin supply system according to any one of claims 9 to 11, wherein the plasma processing apparatus 8 is moved to supply the plasma 5 partially to the surface of the workpiece 6. The plasma processing apparatus 8 is moved by raising the processing apparatus 8 in a substantially vertical direction.
[0018]
The resin supply system according to claim 13 of the present invention provides the resin supply system according to any one of claims 9 to 12, wherein the plasma processing apparatus 8 is moved to partially supply the plasma 5 to the surface of the workpiece 6. The plasma processing apparatus 8 is moved while controlling the discharge state and the discharge stop state of the processing apparatus 8.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described.
[0020]
As shown in FIG. 1, the resin supply system of the present invention includes a plasma processing device 8, a resin supply device 9, support arms 30, 31, a control unit 32, a transport device 33, a detector 34, and the like. .
[0021]
FIG. 2 shows an example of the plasma processing apparatus 8 described above. The plasma processing apparatus 8 is formed by providing a plurality (a pair) of plasma generating electrodes 3 and 4 in contact with the outer periphery of the reaction vessel 2 and arranging the electrodes 3 and 4 so as to be vertically opposed. A space between the electrodes 3 and 4 in the reaction vessel 2 is formed as a discharge space 13.
[0022]
The reaction vessel 2 is made of a high melting point insulating material (dielectric material) and is formed in a straight, substantially cylindrical shape (circular pipe). Is opened as a substantially circular outlet 1. Examples of the insulating material forming the reaction vessel 2 include glassy materials such as quartz, alumina, and partially stabilized zirconium yttria, and ceramic materials. In the present invention, the average inner diameter s of the reaction vessel 2 is formed to be 0.1 to 20 mm. Since the reaction vessel 2 is formed of the insulating material as described above, it is difficult to form the reaction vessel 2 so that the average inner diameter s is less than 0.1 mm. Is formed, the degree of uniformity of the opening size of the outlet 1 is reduced, and there is a possibility that uniform plasma processing cannot be performed. If the average inner diameter s of the reaction vessel 2 is larger than 20 mm, the plasma may not be easily lit even when the starting assisting means 15 described later is used, and the volume of the discharge space 13 may become too large and the discharge space 13 may become too large. In this case, uniform and stable plasma cannot be generated, and uniform plasma processing may not be performed. Therefore, the average inner diameter s of the reaction vessel 2 is set to 0.1 to 20 mm so that the plasma can be reliably turned on and uniform surface treatment can be performed spotwise (locally or partially). It is. 1 and 2, since the reaction vessel 2 is formed in a straight cylindrical shape, the outlet 1 of the reaction vessel 2 is formed with the above average inner diameter s.
[0023]
The electrodes 3 and 4 for generating plasma can be formed of a conductive metal material such as copper, aluminum, brass, and stainless steel having high corrosion resistance (such as SUS304). The electrodes 3 and 4 are formed in an annular shape (ring shape), and are inserted so as to surround the reaction vessel 2 with the inner peripheral surface thereof in contact with the outer peripheral surface of the reaction vessel 2. One of the upper electrodes 3 of the pair of electrodes 3 and 4 is connected to a power supply 11 for generating a high-frequency voltage via an impedance matching unit 12, and the electrode 3 is applied with a high voltage. It is formed as a high voltage electrode. Further, the other electrode 4 disposed on the lower side is formed as a ground electrode which is grounded and has a low voltage. The distance between the electrodes 3 and 4 is preferably set to 3 to 20 mm in order to generate plasma stably.
[0024]
The power supply 11 is for applying a voltage between the electrodes 3 and 4, and can thereby apply an electric field to the discharge space 13. The waveform of the voltage applied between the electrodes 3 and 4 can be an alternating voltage waveform having no pause, a pulse-like waveform, or a combination thereof. The alternating voltage waveform has a voltage waveform (for example, a sine wave) having no or almost no pause time (time during which the voltage is zero and in a steady state), and a pulse-shaped voltage waveform is a voltage waveform having a pause time. It has. The power supply 11 is controlled by the control unit 32 so as to switch between a state in which a voltage is applied between the electrodes 3 and 4 and a state in which no voltage is applied, thereby controlling the discharge state in the discharge space 13 of the plasma processing apparatus 8. The discharge stop state can be controlled.
[0025]
The plasma processing apparatus 8 includes a start-up assisting means 15 as an assisting means for starting discharge in the discharge space 13 to turn on the plasma at the time of the start-up. In FIG. 2, a high-voltage pulse generator 45 and a lighting electrode 46 are provided outside the reaction vessel 2 as the start-up assisting means 15. The high-voltage pulse generator 45 is for generating a high-voltage pulse voltage, and for example, has a circuit called a blocking oscillator or a single-pole inverter to generate a pulse voltage. The lighting electrode 46 is formed of a metal rod having a sharp tip, and can be formed of the same metal material as the electrodes 3 and 4. The lighting electrode 46 is connected to a high-voltage pulse generator 45, and the pulse voltage generated by the high-voltage pulse generator 45 is supplied to the lighting electrode 46. The lighting electrode 46 is disposed such that its tip is located on the downstream side (lower side) of the outlet 1 of the reaction vessel 2.
[0026]
The surface treatment using the plasma processing apparatus 8 is performed as follows. First, a gas for plasma generation is introduced from the gas inlet 10 into the reaction vessel 2 by flowing from the top to the bottom, and a voltage is supplied from the power supply 11 to the electrode 3 through the impedance matching device 12 to thereby supply the A voltage such as a high-frequency voltage or the like is applied between the four, thereby generating an electric field in the discharge space 13 in the reaction vessel 2. At this time, the voltage applied between the electrodes 3 and 4 is a voltage necessary for continuously generating plasma in the discharge space 13 after plasma lighting, and is, for example, 0.5 to 1 kV.
[0027]
Next, a pulse voltage is generated by the high-voltage pulse generator 45, and the pulse voltage is discharged from the lighting electrode 46 to the grounded electrode 4 via the discharge space 13. The magnitude of the pulse voltage at this time is preferably at least three times the voltage applied between the electrodes 3 and 4, that is, the voltage required for continuously generating plasma.
[0028]
When a high-voltage pulse voltage is applied to the discharge space 13 in this manner, preionized plasma is generated in the space of the discharge space 13. After that, the preionized plasma is amplified by the voltage applied between the electrodes 3 and 4 (a low voltage that cannot originally cause dielectric breakdown in the reaction vessel 2), and is amplified in the discharge space 13 in the reaction vessel 2. A plasma is generated. Thereafter, a dielectric barrier discharge, which is a glow-like discharge, is generated in the discharge space 13 under a pressure near the atmospheric pressure (93.3 to 106.7 kPa (700 to 800 Torr)) by the high frequency voltage applied between the electrodes 3 and 4. Is generated, and the plasma generation gas is turned into plasma by the dielectric barrier discharge, and the plasma 5 containing the plasma active species is continuously generated. Then, the plasma 5 generated in this way is jetted downward (continuously) from the outlet 1 so as to blow the plasma 5 onto the surface of the workpiece 6 disposed below the outlet 1. To In this manner, the surface of the object 6 can be surface-treated to have an affinity with the resin 7. Here, “the surface of the object 6 is subjected to surface treatment so as to have an affinity with the resin 7” means that the surface of the object 6 is cleaned by removing an organic substance or the like attached thereto. For example, a functional group capable of bonding to the resin 7 is formed on the surface of the resin 6. By these surface treatments, the adhesiveness and the adhesiveness between the resin 7 and the surface of the workpiece 6 are improved. The surface treatment of the object 6 is performed only partially or locally only on the portion where the resin 7 needs to be supplied, and the plasma 5 is not supplied on the portion where the resin 7 does not need to be supplied. This prevents the surface treatment from being performed.
[0029]
At the time of the above surface treatment, in order to continuously and stably generate the plasma 5, the voltage applied between the electrodes 3 and 4 has a frequency (frequency of the electric field applied to the discharge space 13) of 1 kHz to 200 MHz. Preferably, it is a voltage. Further, in order to continuously and stably generate the plasma 5, the density of the applied power supplied to the discharge space 13 is 20 to 3500 W / cm. 3 It is preferable to set
[0030]
Examples of the plasma generating gas used in the surface treatment include a single gas such as argon, nitrogen, helium, oxygen, air, and carbon dioxide, or a mixed gas obtained by mixing a plurality of these gases. Further, in order to improve the adhesion to the resin 7, an appropriate amount of a reactive gas such as ammonia, hydrogen, or water vapor can be added to the above-mentioned single gas or mixed gas.
[0031]
The functional group formed on the surface of the workpiece 6 by the surface treatment may be, for example, MO, M-O, when the part of the workpiece 6 to be subjected to the surface treatment is a metal. OH (M is a metal or an inorganic element on the surface of the workpiece 6 and specifically one or more selected from Cu, Al, Si, Cr, etc.) When the part to be subjected to the surface treatment is an organic substance, it is one or more kinds selected from -OCOO-, -COO-, -C = O, and -CO-.
[0032]
As the resin supply device 9 used in the present invention, for example, a device capable of discharging the resin 7 by a fixed amount and for a fixed time by air pressure can be used. Anything that can be used may be used. The resin supply device 9 shown in FIG. 3 supplies air to the barrel (syringe) 41 by the controller 40, and the pressure and supply time of the air supplied to the barrel 41 are adjusted by the controller 40. Thereby, the resin 7 can be discharged for a fixed amount and for a fixed time. The upper opening of the barrel 41 is closed by a cap 42 and an adapter 43 is attached to the upper end of the barrel 41. The adapter 43 and the controller 40 are connected by a connection pipe 44. Further, a nozzle (needle) 45 is provided at an opening on the lower surface of the barrel 41. Further, the barrel 41 is filled with the resin 7 and a plunger 46 is provided in the barrel 41. Reference numeral 51 denotes a cap used to close the opening at the bottom of the barrel 41. The resin 7 is a sealing material for sealing electronic components such as semiconductor chips and optical components such as optical pickups, an adhesive for bonding electronic components and optical components, and a conductive resin such as a conductive paste. Here, a conventionally known one can be used.
[0033]
When the resin 7 is supplied to the surface of the workpiece 6 by the resin supply device 9, air is pressure-fed from the controller 40 into the barrel 41 via the connection pipe 44, the adapter 43, and the cap 42. The plunger 46 in the barrel 41 is pressed down to press the resin 7 from above, and the resin 7 is discharged from the tip of the nozzle 45 and supplied to the surface of the workpiece 6 by this pressing.
[0034]
FIG. 4 shows another example of the resin supply device 9. The resin supply device 9 supplies air to the cartridge 47 filled with the resin 7 by the controller 40, and the pressure of the air supplied to the cartridge 47 is adjusted by the controller 40. The cartridge 47 is held by a holder 48 and the upper opening of the cartridge 47 is sealed with a cap 42. An adapter 43 is attached to the upper ends of the cartridge 47 and the holder 48, and the adapter 43 and the controller 40 are connected by a connection pipe 44. A nozzle (needle) 45 is provided at a lower surface opening of the cartridge 47 projecting from a lower end of the holder 48 via a needle adapter 50. Further, a plunger 46 is provided in the cartridge 47.
[0035]
When the resin 7 is supplied to the surface of the workpiece 6 by the resin supply device 9, air is pressure-fed from the controller 40 into the cartridge 47 via the connection pipe 44, the adapter 43, and the cap 42, and this air is used. The plunger 46 in the cartridge 47 is pushed down to press the resin 7 from above, and by this pressing, the resin 7 is precisely controlled and discharged from the tip of the nozzle 45 by a required amount to be applied to the surface of the workpiece 6 and supplied. Is what is done.
[0036]
Here, the air pressure supplied from the controller 40 to the barrel 41 and the cartridge 47 varies depending on the type of the resin 7 and the like, but can be set to, for example, 10 to 1000 kPa. The air supply time (ejection time of the resin 7) varies depending on the type of the resin 7, the supply amount of the resin 7, and the like, but is set to, for example, 0.01 to 60 seconds, preferably 0.1 to 10 seconds. be able to.
[0037]
The resin supply system of the present invention is provided with a pair of support arms 30 and 31. These support arms 30 and 31 are provided with a support column 71 formed long in the substantially vertical direction, a rear support piece 52 attached to the support 71 so as to be vertically movable and rotatable in a horizontal plane, and a rear support piece 52. The front support piece 53 is attached to the front support piece 53 such that the front support piece 53 is mounted to be freely driven to protrude and retract in a substantially horizontal direction. The support arms 30 and 31 are provided with a driving device such as a motor, and the operation of the driving device is controlled by the control unit 32 so as to drive the rear support piece 52 up and down, rotate, and rotate the front support piece 53. Can be driven.
[0038]
Then, by holding the reaction container 2 of the plasma processing apparatus 8 by the holding portion 54 of one support arm 30, the reaction container 2 of the plasma processing apparatus 8 is supported by the one support arm 30 and the other support arm is supported. The holding portion 54 of the arm 31 holds the barrel 41 of the resin supply device 9 or the holder 48 holding the cartridge 47 so that the other support arm 31 supports the barrel 41 or the cartridge 47 of the resin supply device 9. I have to. Therefore, the reaction container 2 of the plasma processing apparatus 8 and the barrel 41 or the cartridge 47 of the resin supply device 9 can be moved in the vertical and horizontal directions by the vertical drive and the rotation drive of the rear support piece 52 and the drive of the front support piece 53 to move in and out. That is, the reaction container 2 and the barrel 41 or the cartridge 47 are formed so as to be movable under the control of the control unit 32.
[0039]
The control unit 32 is a computer such as a microcomputer, a microprocessor, a CPU, and a personal computer, and includes a program for controlling the power supply 11, a program for controlling the support arms 30, 31, a program for controlling the transport device 33, and the like. Is formed.
[0040]
The transport device 33 can be formed by a belt conveyor that can place and transport the workpiece 6, but can also be formed by a horizontally movable table or the like. The transport device 33 is such that the transport speed of the workpiece 6 is controlled by the control unit 32. The detector 34 is formed by a camera or the like, and is disposed above the transfer device 33. The detector 34 recognizes an alignment marker or the like provided on the processing target 6, and supplies a plasma to the processing target 6. And a resin supply portion. The detection result by the detector 34 is sent to the control unit 32, and the control of the support arms 30 and 31 by the control unit 32 is performed based on the detection result.
[0041]
The supply of the resin 7 to the workpiece 6 using the resin supply system of the present invention is performed as follows. First, the workpiece 6 is transported by the transport device 33, and the workpiece 6 is arranged below the plasma processing apparatus 8. Next, the plasma 5 is generated in the plasma processing apparatus 8 as described above, and the plasma 5 is blown out from the outlet 1 of the reaction vessel 2 and sprayed on the surface of the work 6, thereby forming the surface of the work 6. At this time, the control unit 32 controls the support arm 30 that supports the reaction vessel 2 to move the reaction vessel 2, and the control unit 32 controls the power supply 11 to change the discharge state in the discharge space 13. By changing the discharge stop state or the like, the surface treatment is performed by spraying the plasma 5 only on the portion of the workpiece 6 requiring the surface treatment. When the reaction vessel 2 is moved by the support arm 30, it is preferable to move the reaction vessel 2 in a substantially vertical direction before moving the reaction vessel 2, so that the reaction vessel 2 passes over a portion that does not require surface treatment. In this case, the distance between the outlet 1 of the reaction vessel 2 and the surface of the workpiece 6 increases, and the pressure at which the plasma 5 is sprayed decreases, and as a result, the effect of the plasma 5 is required ( Unnecessary portions are not subjected to surface treatment.
[0042]
Next, the resin 7 is discharged and supplied from the resin supply device 9 as described above to the surface-treated portion of the workpiece 6. At this time, the control unit 32 controls the support arm 31 that supports the barrel 41 or the cartridge 47 to move the barrel 41 or the cartridge 47, and the controller 40 controls the discharge amount of the resin 7 from the nozzle 45 by the controller 40. In this way, the resin 7 is supplied only to the portion of the workpiece 6 on which the surface treatment has been performed. Further, the surface of the object to be processed having an affinity for the resin 7 as described above means that the surface of the object to be processed 6 is cleaned (cleaned) by the plasma 5 or the surface of the object to be processed 6 is bonded to the resin 7. However, if the object 6 after the surface treatment is held in the air for a long time, organic substances floating in the air adhere to the surface of the object 6 and become contaminated. Or the number of functional groups formed on the surface of the object 6 is reduced with time. As a result, the surface treatment reduces the effect, and the adhesion or adhesion between the object 6 and the resin 7 is reduced. May decrease. Although such a phenomenon depends on the object 6 to be processed, if it is earlier, the effect of the surface treatment deteriorates in the order of minutes.
[0043]
Therefore, it is preferable to supply the resin 7 to the surface of the processing target 6 while maintaining the surface of the processing target 6 after the surface treatment in a state having an affinity for the resin 7. The timing of supplying the resin 7 to the surface of the processing object 6 is set immediately after the surface treatment, preferably within one minute, more preferably within 30 seconds. Then, in order to supply the resin 7 to the surface of the workpiece 6 immediately after the surface treatment, the barrel 41 or the cartridge 47 of the resin supply device 9 is moved following the movement of the reaction vessel 2 of the plasma processing device 8. Preferably, the support arms 30 and 31 are controlled by the control unit 32 so as to move the reaction container 2 and the barrel 41 or the cartridge 47 in this manner.
[0044]
The workpiece 6 supplied with the resin 7 as described above is transported to the next step by the transport device 33. Accordingly, the unprocessed object 6 is disposed below the plasma processing apparatus 8 and the same surface treatment as described above is started. In this manner, the surface of the object 6 can be continuously processed, and the resin 7 can be supplied to the object 6.
[0045]
In the present invention, the plasma 5 is supplied only to the portion of the object 6 to which the resin 7 needs to be supplied, and the surface of the object 6 is surface-treated so as to have an affinity with the resin. Since the resin 7 is supplied only to the processed portion, the resin 7 does not flow or sneak into unnecessary portions, and the resin 7 can be hardly supplied to portions where the resin 7 is unnecessary. is there. That is, since the portion not subjected to the surface treatment by the plasma 5 has poor wettability of the resin 7, the flowability of the resin 7 is different between the portion subjected to the surface treatment and the portion not subjected to the surface treatment. The resin 7 can be applied only to the portion. In addition, since the surface-treated portion is cleaned or a functional group is formed, it is possible to enhance the adhesion and adhesion between the portion requiring the resin 7 and the resin 7.
[0046]
【Example】
(Example 1)
The resin supply system shown in FIG. 1 was used. The reaction vessel 2 of the plasma processing apparatus 8 has an outer diameter of 5 mm and an inner diameter of 3 mm and is made of quartz. Electrodes 3 and 4 are arranged on the outer surface of the reaction vessel 2 above and below the outlet 1, and one of the electrodes 3 is connected to a power supply 11 and serves as a high-voltage electrode to which a high voltage is applied. Are formed as ground electrodes to be grounded. As the power supply 11 for generating a high frequency, a power supply that oscillates a sinusoidal voltage having a frequency of 180 kHz was used. Further, the position of the reaction vessel 2 is controlled by the control unit 32, and is transported at a previously programmed location. The resin supply device 9 controls the air pressure and the resin supply time by the controller 40, and controls the position of the barrel 41 or the cartridge 47 by the control unit 32, and conveys the pre-programmed portion to the necessary portion to the required amount. The resin 7 is supplied. Then, argon was introduced into the reaction vessel 2 at a rate of 1.5 L / min and oxygen was introduced at a rate of 0.02 L / min, and a plasma 5 was generated with a power of 200 W.
[0047]
As shown in FIG. 5, the workpiece 6 is a substrate 62 on which a semiconductor chip (IC) 60 and an optical component (light receiving element) 61 are mounted. Surface treatment was performed by spraying plasma 5 every second. Next, using a resin supply device 9 that discharges the resin 7 by air pressure for a certain period of time immediately to the surface-treated portion, the black epoxy resin (sealing material) is subjected to 100 kPa for each surface-treated portion for 1 second. And applied. As a result, only the portion where the semiconductor chip 60 was mounted was sealed with the sealing material. The applied amount of the resin 7 was 500 mg for each semiconductor chip 60.
[0048]
Next, a surface treatment was performed by spraying plasma 5 for 1 second on portions (4 places) on which the optical components were mounted. Next, using the same resin supply device 9 as above, a transparent epoxy resin (transparent sealing material) was applied to each surface-treated portion at 100 kPa for 1 second. Thereby, only the portion where the optical component 61 was mounted was sealed with the transparent sealing material. The application amount was 300 mg for each optical component 61.
[0049]
In addition, no sealing material was applied to the portion that was not surface-treated.
(Example 2)
The voltage applied between the electrodes 3 and 4 was a pulsed voltage with a rise and fall time of 10 μsec and a repetition frequency of 200 kHz, and the electric field strength between the voltages 3 and 4 was 50 kV / cm. Further, nitrogen was introduced into the reaction vessel 2 at a rate of 1.5 L / min and oxygen was introduced at a rate of 0.02 L / min, and a plasma 5 was generated with a power of 200 W. Except for these, processing was performed in the same manner as in Example 1.
[0050]
The workpiece 6 is a case 65 which is a relay component as shown in FIG. 6A, and moves the reaction vessel 2 of the plasma processing apparatus 8 as shown by an arrow in FIG. The inner surface of the case 65 was surface-treated by blowing the plasma 5 from the opening on the upper surface of the case 65. The processing time was 1 second. Next, the main body 66 provided with the relay terminals 67 and the like is inserted into the case 65, and then the one-part epoxy adhesive is injected into the case 65 by the resin supply device 9 at 80 kPa for one second and applied. did. The amount applied was 100 mg. Thereafter, the above adhesive was cured by heating to form a relay 68 as shown in FIG. 6C.
[0051]
The presence or absence of bubbles was observed by immersing the relay 68 in Fluorinert manufactured by Sumitomo 3M (70 ° C., 3 minutes). When no surface treatment was performed, bubbles were generated instantaneously, but when the surface-treated case 65 was used, no bubbles were observed even after immersion for 3 minutes. Also, as a result of cutting the relay 68 and observing the cross section, when the case 65 having been subjected to the surface treatment was used, the adhesive wrapped around the gap between the case 65 and the main body 66, but the untreated case 65 was used. In this case, the adhesive did not sufficiently flow into the gap, and air bubbles were contained.
[0052]
【The invention's effect】
As described above, the invention of claim 1 of the present invention is configured to include a reaction vessel having one side opened as an outlet and a plurality of electrodes. A plasma is generated by generating a discharge in the reaction vessel below, and the plasma generated in the reaction vessel is blown out from an outlet, thereby supplying the plasma to the surface of the processing object and forming the surface of the processing object with a resin. After the surface is treated to a state that has affinity with the resin, the resin is supplied to the surface of the object to be treated that has an affinity for the resin. After the surface of the object to be treated is surface-treated to a state that has an affinity for the resin, the resin is supplied to the surface-treated part, so that the resin does not flow or sneak into unnecessary parts. Is unnecessary Grease is difficult to be supplied, and the surface-treated part is cleaned or functional groups are formed. It can be enhanced.
[0053]
Further, according to the invention of claim 2 of the present invention, since the method of supplying the resin discharges the resin by air pressure for a predetermined time, the supply amount of the resin can be controlled by air pressure, and the resin is further reduced to unnecessary portions. It can be difficult to supply.
[0054]
Further, according to the invention of claim 3 of the present invention, since the outlet of the reaction vessel is substantially circular and the average inner diameter is 0.1 to 20 mm, the plasma can be blown out from the outlet in a spot-like manner. The surface of the processed material can be easily surface-treated locally or locally.
[0055]
Further, according to the invention of claim 4 of the present invention, the plasma is supplied to the surface of the object to form a functional group that binds to the resin on the surface of the object, thereby making the surface of the object compatible with the resin. Since it is in a state with a property, the functional group formed on the surface of the object to be treated can be combined with the resin, and the adhesion and adhesion of the resin to the surface of the object can be further improved. It is.
[0056]
Further, according to the invention of claim 5 of the present invention, the functional group binding to the resin is composed of MO, M-OH (M is a metal or an inorganic element), -OCOO-, -COO-, -C = O,- Since it is at least one selected from C—O—, the above-mentioned functional group formed on the surface of the object to be treated can be bonded to the resin, and the adhesiveness and adhesion of the resin to the surface of the object to be treated Can be further improved.
[0057]
In the invention of claim 6 of the present invention, since the resin is an adhesive, the bonding strength of the resin can be increased, and the bonding reliability can be improved.
[0058]
In the invention of claim 7 of the present invention, since the resin is a sealing material, the sealing performance by the resin can be improved, and the sealing reliability can be improved.
[0059]
Further, according to the invention of claim 8 of the present invention, since the resin is supplied to the surface of the object immediately after the surface treatment, the resin can be supplied before the effect of the surface treatment is degraded. The adhesiveness and adhesion of the resin to the surface can be further improved.
[0060]
According to a ninth aspect of the present invention, there is provided a resin supply system using the resin supply method according to any one of the first to eighth aspects, wherein the plasma is supplied to the surface of the object to be treated, and the surface of the object is treated. Since the apparatus includes a plasma processing apparatus for performing surface treatment in a state having affinity for resin and a resin supply apparatus for supplying the resin to the surface of the object to be processed in which the state having affinity for resin is provided, the object to be processed is provided. After the plasma is supplied from the plasma processing apparatus to the portion where the resin needs to be supplied, and the surface of the object to be treated is surface-treated so as to have an affinity with the resin, the resin supplied from the resin supply apparatus to the surface-treated portion. By supplying the resin, it is possible to prevent the resin from being supplied to the unnecessary portion without flowing or sneaking into the unnecessary portion, and further, the surface-treated portion is not required. Kleini Since grayed by or functional group is or are formed, in which it is possible to improve the adhesion and adhesion with the resin is necessary portions and the resin.
[0061]
Further, according to a tenth aspect of the present invention, as a plasma processing apparatus, a plurality of electrodes are provided outside a reaction vessel formed of an insulating material, and a space between the electrodes in the reaction vessel is formed as a discharge space. By supplying a plasma generating gas to the space and applying a voltage between the electrodes, a discharge is generated at a pressure near the atmospheric pressure in the discharge space, and a plasma generated by the discharge is blown out of the discharge space. Therefore, the surface treatment using plasma can be performed under a pressure close to the atmospheric pressure, and the surface treatment can be performed more easily than when the pressure is reduced.
[0062]
Further, according to the invention of claim 11 of the present invention, the plasma is supplied to the surface of the processing object by moving the plasma processing apparatus, and the resin supply apparatus is moved by following the plasma processing apparatus to thereby reduce the processing of the processing object. Since the resin is supplied to the surface-treated portion, the resin can be supplied before the effect of the surface treatment is degraded, and the adhesion and adhesion of the resin to the surface of the object to be treated can be further improved. It is.
[0063]
Further, according to the twelfth aspect of the present invention, when plasma is partially supplied to the surface of the processing object by moving the plasma processing apparatus, the plasma processing apparatus is raised in a substantially vertical direction, and Since the plasma processing apparatus is moved, the distance between the plasma processing apparatus and the surface of the object to be processed increases when the plasma processing apparatus passes through a portion that does not require surface treatment. As a result, only the portion requiring the plasma treatment effect is provided, and the unnecessary portion can be prevented from being surface-treated.
[0064]
Further, according to the invention of claim 13 of the present invention, when partially supplying plasma to the surface of the workpiece by moving the plasma processing apparatus, the plasma processing apparatus controls the discharge state and the discharge stop state of the plasma processing apparatus. Since the plasma processing apparatus is moved, the surface of the object to be processed can be partially or locally subjected to the surface treatment, and the plasma can be prevented from being supplied to a portion not requiring the surface treatment.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing an example of an embodiment of the present invention.
FIG. 2 is a schematic view showing an example of the plasma processing apparatus according to the first embodiment.
FIG. 3 is a partially broken schematic view showing an example of the resin supply device of the above.
FIG. 4 is a partially broken schematic view showing an example of another resin supply device of the above.
FIG. 5 is a plan view showing an example of an object to be processed according to the embodiment.
FIGS. 6A and 6B show an example of another object to be processed, wherein FIG. 6A is an exploded perspective view, FIG. 6B is a plan view, and FIG.
[Explanation of symbols]
1 outlet
2 Reaction vessel
3 electrodes
4 electrodes
5 Plasma
6 Workpiece
7 Resin
8 Plasma processing equipment
9 Resin supply device
13 Discharge space

Claims (13)

  1. It is composed of a reaction vessel open on one side as an outlet and a plurality of electrodes, and a voltage is applied between the electrodes to generate a discharge in the reaction vessel under a pressure near atmospheric pressure to generate plasma. Then, by blowing the plasma generated in the reaction vessel from the outlet, the plasma is supplied to the surface of the object to be treated, and the surface of the object to be treated is subjected to surface treatment in a state having affinity with the resin. A resin supply method, comprising supplying a resin to a surface of an object to be processed in an affinity state.
  2. 2. The resin supply method according to claim 1, wherein the method of supplying the resin includes discharging the resin by air pressure for a predetermined time.
  3. The resin supply method according to claim 1 or 2, wherein the outlet of the reaction vessel is substantially circular, and has an average inner diameter of 0.1 to 20 mm.
  4. The method according to claim 1, wherein the surface of the object to be treated is made compatible with the resin by supplying a plasma to the surface of the object to be treated to form a functional group that binds to the resin on the surface of the object to be treated. Item 4. The resin supply method according to any one of Items 1 to 3.
  5. The functional group bonded to the resin is at least one selected from MO, M-OH (M is a metal or an inorganic element), -OCOO-, -COO-, -C = O, -CO-. The resin supply method according to claim 4, wherein:
  6. The resin supply method according to any one of claims 1 to 5, wherein the resin is an adhesive.
  7. The resin supply method according to any one of claims 1 to 5, wherein the resin is a sealing material.
  8. The resin supply method according to claim 1, wherein the resin is supplied to a surface of the workpiece immediately after the surface treatment.
  9. A resin supply system using the resin supply method according to any one of claims 1 to 8, wherein plasma is supplied to the surface of the object to be processed so that the surface of the object has an affinity with the resin. A resin supply system for supplying a resin to a surface of an object to be processed in which a state having an affinity for the resin is maintained.
  10. As a plasma processing apparatus, a plurality of electrodes are provided outside a reaction vessel formed of an insulating material, a space between the electrodes in the reaction vessel is formed as a discharge space, a gas for generating plasma is supplied to the discharge space, and a space between the electrodes is formed. The method according to claim 9, wherein a voltage is applied to the discharge space to generate a discharge at a pressure close to the atmospheric pressure in the discharge space, and a plasma generated by the discharge is blown out of the discharge space. Resin supply system.
  11. The plasma is supplied to the surface of the processing object by moving the plasma processing apparatus, and the resin is supplied to the surface-treated portion of the processing object by moving the resin supply apparatus following the plasma processing apparatus. The resin supply system according to claim 9 or 10, wherein:
  12. 12. The plasma processing apparatus according to claim 9, wherein the plasma processing apparatus is moved up by moving the plasma processing apparatus in a substantially vertical direction when partially supplying plasma to the surface of the workpiece by moving the plasma processing apparatus. The resin supply system according to any one of the above.
  13. When supplying plasma partially to the surface of the workpiece by moving the plasma processing apparatus, the plasma processing apparatus is moved while controlling a discharge state and a discharge stop state of the plasma processing apparatus. Item 13. The resin supply system according to any one of Items 9 to 12.
JP2002325683A 2002-11-08 2002-11-08 Resin supply system Expired - Fee Related JP3931793B2 (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184163A (en) * 2006-01-06 2007-07-19 Seiko Epson Corp Plasma processing apparatus
JP2007287927A (en) * 2006-04-17 2007-11-01 Matsushita Electric Ind Co Ltd Ic component mounting method, die bonding apparatus, and electronic component
US20120325539A1 (en) * 2011-06-21 2012-12-27 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process
JP2013019601A (en) * 2011-07-12 2013-01-31 Feather Craft:Kk Device, system and method of processing arrow
US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184163A (en) * 2006-01-06 2007-07-19 Seiko Epson Corp Plasma processing apparatus
JP2007287927A (en) * 2006-04-17 2007-11-01 Matsushita Electric Ind Co Ltd Ic component mounting method, die bonding apparatus, and electronic component
JP4702157B2 (en) * 2006-04-17 2011-06-15 パナソニック株式会社 IC component mounting method and die bonding apparatus
US20120325539A1 (en) * 2011-06-21 2012-12-27 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process
US8803001B2 (en) 2011-06-21 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process
JP2013019601A (en) * 2011-07-12 2013-01-31 Feather Craft:Kk Device, system and method of processing arrow
US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding

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