JP2004111918A - Optical component mounter and optical module using same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical component mounter that comprises a substrate mounting optical semiconductor devices without a space by a junction down method, and an optical module that comprises an optical component mounter and have optical high engaging efficiency with optical semiconductor devices and optical parts, and excellent temperature characteristics. <P>SOLUTION: The optical component mounter comprises a light-emitting part or light-receiving part, the optical semiconductor device having a predetermined structure that is formed on a main surface, and a substrate having a mounting surface. The substrate comprises a first recess on the mounting surface, and the optical semiconductor device is mounted to the substrate by junction down, so that the structure of the optical semiconductor device and the first recess of the substrate are faced. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an optical element package and an optical module using the same.
[0002]
[Prior art]
2. Description of the Related Art Various types of optical semiconductor elements are used by modularizing optical components such as an optical fiber or an optical waveguide optically on an incident end surface or an exit end surface of light. In that case, it is necessary to match the optical axes of the optical semiconductor element and the optical component.
[0003]
Particularly, when an optical fiber or the like is optically coupled to an optical semiconductor device such as a semiconductor laser device (LD) or a waveguide photodiode (WG-PD), the axial center adjustment is controlled to an accuracy of about ± 1 μm or less. It is necessary to.
In the related art, the above-described axis center adjustment is performed as follows. That is, for example, the LD is driven in a state where the end face of the optical fiber is opposed to the emission end face of the LD, and while the output light from the optical fiber is monitored, both are fixed at the position where the light output becomes maximum.
[0004]
However, the adjustment of the axis center by this method is extremely complicated, and is not suitable in terms of cost reduction and mass production of the module.
Therefore, recently, a method called a passive alignment method has been developed and put into practical use. That is, the relative position between the optical semiconductor element and the mounting substrate for mounting the same (hereinafter referred to as “mounting substrate”) is determined with high accuracy, and the relative position between the mounting substrate and an optical component such as an optical fiber waveguide is determined. The relative position between them is also determined with high precision. Thereby, the optical semiconductor element and the optical component are aligned with each other and optically coupled via the mounting substrate without driving the optical semiconductor element.
[0005]
Specifically, in this method, when the optical semiconductor element is mounted on the mounting board, positioning markers are precisely formed on both the optical semiconductor element and the mounting board, and one positioning marker is used for the other positioning marker. It is used to determine a relative position between the optical semiconductor element and the mounting board so as to be at a predetermined position with respect to the marker.
[0006]
An optical semiconductor device having a positioning marker is known, for example, from Japanese Patent Application Laid-Open No. 7-050449. In this semiconductor laser element 5, as shown in FIG. 7, two mutually parallel mesa stripe stripes are formed on a substrate 5e at predetermined intervals in the width direction, and one of the mesa stripes is formed by a laser light. , And a V-shaped groove marker 5b is formed above the other mesa stripe. In the process of manufacturing the semiconductor laser device 5, the two mesa stripes are formed simultaneously in one etching step, so that the relative position between them is determined with high accuracy. Therefore, the interval between the V-shaped groove marker 5b and the active layer 5c is also determined with high accuracy. Note that the V-shaped groove marker 5b suppresses the crystal growth of the semiconductor layer immediately above the mesa stripe when one of the mesa stripes is buried with the semiconductor material, leaving the dielectric layer only on the upper surface of the other mesa stripe. It is formed by doing.
[0007]
In general, an optical semiconductor element is mounted on a mounting substrate by a junction-down method in which the surface (the surface formed by crystal growth, that is, the upper surface 5a in FIG. 7) faces the mounting substrate.
The reason is that, although the back surface of the optical semiconductor element is polished, its surface roughness is about ± 10 μm, whereas it is formed as a semiconductor laminated structure by vapor phase epitaxial growth. Since the thickness accuracy of each semiconductor layer is controlled to about ± 0.1 μm, it is suitable as a reference plane for the height of the active layer which is the light receiving / emitting part in the optical semiconductor element. This is because it is easy to secure the positioning accuracy in the direction perpendicular to the mounting surface.
[0008]
On the other hand, a mounting board having an alignment marker is disclosed in Japanese Patent Application Laid-Open No. Hei 10-206698. FIG. 9 is a cross-sectional view of an optical module disclosed in Japanese Patent Application Laid-Open No. 10-2066698. Here, the mounting substrate 4 ′ is formed of, for example, a silicon substrate, and the semiconductor laser element 5 is mounted thereon. A V-shaped groove is formed on the surface of the substrate along with a predetermined wiring pattern in parallel with a direction in which an optical signal is input or output via the optical fiber 3. The V-shaped groove is used as a positioning marker on the mounting board 4 'when mounting the semiconductor laser element 5 having the above-described positioning marker.
[0009]
Using such a V-shaped groove 4 ′, the position with respect to the optical fiber 3 and the mounting board 4 ′ is determined by the above-mentioned V-groove of the mounting board 4 ′, the vertical hole 2 a 1 for holding the optical fiber 3 on the package 2 side, and a predetermined position. It is determined by engaging the ridge 2a3 precisely formed in a positional relationship.
Thus, the optical fiber 3 fixed in the vertical hole 2a1 of the package 2 and the semiconductor laser device 5 positioned on the mounting substrate 4 'using the positioning marker are aligned with high precision and optically coupled. I have.
[0010]
[Patent Document 1]
JP-A-7-050449
[Patent Document 2]
Japanese Patent Application Laid-Open No. Hei 10-206686
[0011]
[Problems to be solved by the invention]
By the way, in the semiconductor laser device 5 shown in FIG. 7, as shown in FIG. 8, due to abnormal growth of the semiconductor in the manufacturing method of the semiconductor laser device 5, near the V-shaped groove marker 5b (region IV in FIG. 7), A convex portion 5d having an uneven height is formed along the V-shaped groove marker 5b.
May occur.
[0012]
Further, in the electrode forming step of the semiconductor laser element 5 shown in FIG. 7, as shown in FIG. 10, a convex portion 5d having a non-uniform height is also formed at the edge of the surface electrode (region V in FIG. 7). May occur.
When such a semiconductor laser element 5 is fixed to a mounting board by junction down, a gap may be generated between the surface of the semiconductor laser element and the mounting surface of the mounting board due to the presence of the protrusion 5d. is there.
[0013]
Further, in positioning the semiconductor laser element 5 and the mounting board, instead of the V-shaped groove marker 5b shown in FIG. 7, the edge of the electrode on the surface of the semiconductor laser element 5 'is positioned as shown in FIG. It may be used as a marker. Also in this case, when a convex portion 5d having a non-uniform height along the longitudinal direction is generated at the edge portion of the electrode (region VI in FIG. 11) (FIG. 11B), the surface of the semiconductor laser element 5 'is formed. In some cases, a gap may be formed between the mounting board and the mounting surface of the mounting board.
[0014]
In some cases, this gap makes it difficult for heat generated in the semiconductor laser device to escape to the mounting substrate, and deteriorates the temperature characteristics of the semiconductor laser device.
In another case, since the relative position between the semiconductor laser device and the mounting substrate differs for each device, the mutual axial center position between the semiconductor laser device and the optical fiber also differs. For this reason, the optical coupling efficiency between the semiconductor laser device and the optical fiber may vary greatly from device to device.
In another case, the fixing strength of the semiconductor laser element is not ensured, and the semiconductor laser element may be detached from the mounting substrate when the semiconductor laser element is connected to an external circuit by wire bonding.
[0015]
SUMMARY OF THE INVENTION An object of the present invention is to provide an optical element package having a substrate on which an optical semiconductor element can be mounted in a junction-down manner without any gap, and an optical element package, and an optical coupling efficiency between the optical semiconductor element and the optical component. And to provide an optical module having high temperature characteristics and good temperature characteristics.
[0016]
[Means for Solving the Problems]
One aspect of the optical element mounted body of the present invention is an optical element mounted body including a light emitting part or a light receiving part, an optical semiconductor element having a predetermined structure formed on a main surface, and a substrate having a mounting surface. And
The substrate has a first concave portion on the mounting surface, and the optical semiconductor element is mounted on the substrate in a junction-down manner such that the structure of the optical semiconductor element faces the first concave portion of the substrate. An optical element mounting body characterized in that:
[0017]
One embodiment of the optical module according to the present invention includes a light emitting portion or a light receiving portion, and an optical semiconductor element having a predetermined structure formed on a main surface;
A substrate having a mounting surface;
An optical waveguide optically coupled to the optical semiconductor element,
An optical module having a package for housing the semiconductor element and the substrate,
The substrate has a first concave portion on the mounting surface,
An optical module, wherein the optical semiconductor element is mounted on the substrate in a junction-down manner such that the structure of the optical semiconductor element and the first concave portion of the substrate face each other.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an optical element package according to the present invention will be described with reference to the drawings.
FIG. 1 is a perspective view of a mounting substrate used in one embodiment of the optical element mounting body of the present invention. The semiconductor laser (LD) 5 as an optical semiconductor element mounted on the mounting substrate 4 has the structure shown in FIG. 7, and is separated from the active layer 5c by a predetermined distance in the width direction as a positioning marker. The V-shaped groove marker 5b is formed on the front surface (main surface) 5a. In the vicinity of the V-shaped groove 5b, as shown in FIG. 8, there is a convex portion 5d having an uneven width and height along the V-shaped groove 5b. The projections 5d are generated by abnormal crystal growth of the semiconductor in the process of manufacturing the LD5.
[0019]
On the mounting surface 4b of the mounting substrate 4, as shown in FIG. 1, two V-shaped grooves 4c parallel to each other are formed along the optical axis direction. In a region between the two V-shaped grooves 4c on the mounting surface 4b, a wiring pattern 4a having a predetermined shape for supplying power to the mounted LD 5 and photodiode (PD) is formed.
[0020]
FIG. 2 is a partially exploded perspective view of the optical element mounted body of the present invention in the vicinity of a region I in FIG. As shown in FIGS. 1 and 2, a recess 4 d is formed on the mounting surface 4 b of the mounting substrate 4 at a position facing the V-shaped groove 5 b of the LD 5 when the LD 5 is placed on the mounting surface 4 b. . The concave portion 4d can accommodate the convex portion 5d of the LD 5 in a non-contact state with the mounting surface 4b. Therefore, even when the convex portion 5d is formed in the vicinity of the V-shaped groove 4c due to abnormal crystal growth of the semiconductor or the like, when the LD 5 is fixed to the mounting surface by junction down, the convex portion 5d is not mounted on the mounting surface of the mounting substrate 4. 4b does not interfere with the mounting. Even when the convex portion 5d is high, it is accommodated in the concave portion 4d in a non-contact state. Therefore, the LD 5 is fixed to the mounting surface 4b of the mounting board 4 without any gap. As a result, not only the fixing strength of the LD 5 is ensured, but also the active layer 5c of the LD 5 can be positioned at a predetermined height with the mounting surface 4b as a reference surface. At the same time, the heat generated in the LD 5 can be surely dissipated to the mounting substrate 4, so that the characteristics of the LD 5 can be improved.
[0021]
When the LD 5 is mounted on the mounting substrate 4, the one V-shaped groove 4 c of the mounting substrate 4 and the V-shaped groove marker 5 b of the LD 5 are separated from each other by a predetermined distance in the width direction of the mounting substrate 4. Thus, the LD 5 is fixed. As a result, the active layer 5c of the LD 5 is located at a position where the center of the one V-shaped groove 4c of the mounting substrate 4 is separated from the reference line by a predetermined distance in the width direction. In this way, the active layer 5c of the LD 5 is positioned with high precision in the height direction and the width direction with respect to the mounting substrate 4.
[0022]
Note that the present invention is not limited to the case where the convex portion 5d due to abnormal crystal growth of the semiconductor exists near the V-shaped groove 5b for positioning the semiconductor laser element 5, but the convex portion is formed at the edge of the electrode 5k in FIG. Even when 5d (see FIG. 10) is present, it can be applied to prevent the occurrence of a gap with the mounting board 4 due to this.
[0023]
Further, according to the present invention, not only the semiconductor laser device 5 having the V-shaped groove 5b for positioning with the mounting substrate 4 as shown in FIG. 7, but also the semiconductor laser device without the V-shaped groove shown in FIG. 5 'is applicable when the edge of the electrode 5k formed at a precise position with respect to the mesa stripe including the active layer 5c is used for positioning with the mounting substrate 4. That is, in the semiconductor laser element 5 ′, in the manufacturing process, the convex portion 5d may be formed at the edge of the electrode for positioning (the region VI in FIG. 11A), and mounting is performed by the convex portion 5d. This is because a gap may occur between the substrate 4 and the substrate 4.
[0024]
Next, the mounting board 4 described above is manufactured as follows.
First, a thermal oxide film is formed on the surface of a silicon (001) substrate. Next, this thermal oxide film is masked with a photoresist except for the portions where the concave portions 4d and the V-shaped grooves 4c are to be formed, and then a C gas is used as a reactive gas. ₂ F ₆ The unmasked thermal oxide film is removed from the surface of the silicon substrate by dry etching such as reactive in-on etching (RIE) or wet etching using hydrofluoric acid. Thereafter, the silicon substrate is immersed in an aqueous solution of potassium hydroxide (KOH). Silicon is anisotropically etched in a portion not covered with the thermal oxide film, and a concave portion 4d and a V-shaped groove 4c are formed on the surface of the silicon substrate, both sides of which are inclined surfaces corresponding to the (111) plane of silicon.
[0025]
The dimensions of the protruding portion 5d generated near the V-shaped groove 5b due to abnormal crystal growth of the semiconductor are typical, having a width of about 5 μm, a height of about 2 μm, and a length less than the entire length of the optical semiconductor element. The size of the concave portion 4d facing the V-shaped groove is, for example, 10 μm or more in width and 5 μm or more in depth in order to be able to accommodate the convex portion 5d in a non-contact state. The length depends on the length of the optical semiconductor element, but is preferably a groove of 300 μm or more.
[0026]
Then, a metal film is formed by a sputter on the surface of the silicon substrate from which the mask for forming the concave portion 4d and the V-shaped groove 4c has been removed by wet etching. After masking a portion corresponding to the wiring pattern 4a on the surface of the metal film with a photoresist, the exposed metal film is etched to form the wiring pattern 4a, and the mask is peeled off to obtain the intended mounting substrate 4. Manufactured.
[0027]
As a material for the mounting substrate, silicon is preferable because of its excellent workability, high heat dissipation, and low cost. Further, the V-shaped groove 4c and the concave portion 4d can be formed by a technique such as anisotropic etching, isotropic etching, or cutting. Particularly, when silicon is selected as a material, processing accuracy is high, and For good reproducibility of dimensions and shape, it is preferable to form the layer by anisotropic wet etching using, for example, an aqueous solution of potassium hydroxide. However, the material of the mounting substrate is not limited to silicon. For example, silicon oxide or aluminum nitride can be used. When these materials are used, the concave portion and the V-shaped groove are cut or fired. Sometimes formed.
[0028]
Next, an optical module according to the present invention will be described with reference to the drawings.
FIG. 3 is a plan view of one embodiment of the optical module of the present invention.
The optical module 1 has a package 2 made of resin. As shown in FIG. 4, the package 2 is a combination of an l-th package 2a and a second package 2b. A vertical hole 2a1 and an opening 2a2 are formed in the first package 2a, and light is transmitted through the vertical hole 2al. The end of the fiber 3 projects into the package 2.
[0029]
The mounting board 4 described above is fixed on the bottom surface of the second package 2b. An LD 5 for emitting laser light and a PD 6 for monitoring the intensity of the laser light of the LD 5 are fixed to the wiring pattern 4a of the mounting board 4 via solder layers (not shown), respectively (see FIG. 5). The LD 5 is mounted on the mounting surface 4b by a junction down method. Each upper surface of the LD 5 and the PD 6 is electrically connected to the wiring pattern 4a by the Au wire 7.
[0030]
As shown in FIG. 4, the wiring pattern 4a is also electrically connected to the lead 2b1 of the second package 2b by the Au wire 7, so that the lead 2b1 and the LD 5 are electrically connected.
[0031]
As shown in FIG. 6, two ridges 2a3 formed on the first package 2a are engaged with the two V-shaped grooves 4c of the mounting substrate 4. Here, since the ridge 2a3 and the vertical hole 2a1 for introducing the optical fiber are formed at the same time when the mold of the l-th package is formed, the relative position between them can be accurately determined based on the precision of the mold. Has been determined. Therefore, the relative position between the mounting substrate 4 and the optical fiber 3 fixed to the vertical hole 2a1 is established by the engagement between the ridge 2a3 of the first package 2a and the V-shaped groove 4c of the mounting substrate 4. Determined with high precision.
[0032]
In the optical module of the present invention, the active layer 5c is positioned with high precision in the height direction and the width direction with respect to the mounting substrate 4, and the optical fiber 3 is positioned with high precision with respect to the mounting substrate 4. The relative position between the optical fiber 3 and the active layer 5c of the LD 5 is determined with high precision via the mounting substrate 4. Therefore, the optical coupling efficiency between the optical fiber 3 and the LD 5 in the optical module 1 increases.
[0033]
The above-described optical module 1 can be manufactured as follows. First, the LD 5 is fixed to the mounting surface 4b of the mounting board 4 by soldering in the manner described above. Thereby, the relative position between the LD 5 and the mounting board 4 is determined with high accuracy.
[0034]
Next, after the mounting substrate 4 is mounted on the second package, the Au wire 7 connects between the wiring pattern 4a and the lead 2bl. Thereafter, the first package 2a is covered from above the second package 2b such that the protruding ridges 2a3 engage with the corresponding V-shaped grooves 4c of the mounting substrate 4, and as shown in FIGS. The mounting board 4 is held between the packages 2a and 2b. Then, the first package 2a and the second package 2b are fixed to each other with an adhesive, such as a thermosetting epoxy, applied to a predetermined location in advance.
[0035]
Then, the optical fiber 3 whose end surface is polished from the outside of the first package 2a is inserted into the vertical hole 2a1, and is brought into contact with the front surface of the mounting board 4. Thus, the relative position between the optical fiber 3 and the mounting board 4 is determined with high accuracy by the first package 2a. As a result, the relative position between the optical fiber 3 and the active layer 5c of the LD 5 is positioned with high precision.
[0036]
Thereafter, the optical fiber 3 is fixed to the vertical hole 2a1 with an adhesive such as a thermosetting epoxy, and a synthetic resin such as epoxy containing silica as a filler is filled through the opening 2a2 of the first package 2a to protect the LD. Fill. The synthetic resin is filled until its surface is flush with the upper surface of the first package 2a. Thus, the assembly of the optical semiconductor module 1 is completed. This optical module is a so-called pigtail type in which an optical fiber 3 extends from the first package 2a.
[0037]
In the optical module 1, two sets of ridges 2a3 and V-shaped grooves 4c are formed for positioning the mounting board 4 and the first package 2a. However, in positioning the mounting board 4 and the first package 2a. At least one set is sufficient. Further, a V-shaped groove facing the V-shaped groove of the mounting substrate 4 is formed in place of the ridge of the first package 2a, and one cylindrical member, for example, an optical fiber is disposed between the two V-shaped grooves. By regulating the movement of the one package 2a and the mounting board 4, the relative position between the first package 2a and the mounting board 4 can be determined.
[0038]
Further, in the optical module 1, the optical fiber 3 is positioned by the vertical hole 2a1, but another V-shaped structure for fixing the optical fiber 3 is further formed on the mounting surface 4b of the mounting substrate 4, and the other is formed. The relative position between the optical fiber 3 and the mounting substrate 4 may be determined by the V-shaped groove.
[0039]
Example (Example)
1. Fabrication of mounting board
A thermal oxide film having a thickness of about 0.8 μm is formed on the surface of a silicon (001) substrate, and a photoresist is spin-coated on the thermal oxide film. A mask having an opening having a width of 145 μm and a length of 1500 μm at the position to be the groove 4 c and an opening having a width of 20 μm and a length of 350 μm at the position to be the concave portion 4 d were formed. At this time, the distance between the centers of the two openings for the V-shaped groove 4c was 1.5 mm, and the distance between the centers of the opening for the one V-shaped groove 4c and the opening for the concave portion 4d was 425 μm.
[0040]
Next, C is applied as a reactive gas to the silicon substrate on which the mask is formed. ₂ F ₆ RIE was performed to remove the thermal oxide film exposed from the opening. Then, after removing the mask, the portion of the silicon substrate from which the thermal oxide film was removed was etched to form a concave portion 4d and a V-shaped groove 4c. At this time, the recess 4d was a groove having a width of 20 μm, a depth of 14 μm, and a length of 350 μm. The depth of the V-shaped groove 4c was 150 μm.
[0041]
A metal film made of Ti / Pt / Au having a thickness of 0.8 μm is formed on the entire upper surface of the silicon substrate on the surface of the silicon substrate on which the V-shaped groove 4c and the concave portion 4d are formed by a splatter. A mask was formed at a portion to be the wiring pattern 4a, and the metal film exposed from the mask was removed by etching, and then the mask was peeled off to form the wiring pattern 4a. Finally, the substrate was cut to a length of 1.5 mm and a width of 3.5 mm to complete the production of the mounting substrate 4.
[0042]
2. Making a package
A resin composition in which 100 parts by mass of silica as a filler was mixed with 100 parts by mass of a polyphenylene sulfide resin having excellent dimensional accuracy at the time of molding was molded into a mold to produce a first package 2a. In addition, the second package 2b was manufactured by integrally molding the same resin composition as the first package and the lead 2b1 made of, for example, Fe-42 wt% Ni.
[0043]
3. Assembly
The LD5 shown in FIG. 7 in which a V-shaped groove marker 5b having a length of 300 μm and a width of 10 μm is formed on the crystal growth surface, and an Au-Sn solder layer having a thickness of about 2 μm is formed at the location of the n-type electrode 5k. Prepared. The LD 5 was placed at a predetermined position on the mounting surface 4b of the mounting substrate 4 with its front surface 5a facing down. At this time, the center distance between the V-shaped groove marker 5b of the LD 5 and one V-shaped groove 4c of the mounting substrate 4 was set to 425 μm. Then, the mounting substrate on which the LD 5 was mounted was heated at a temperature of 320 ° C. for 30 seconds, thereby fixing the LD 5 on the mounting surface 4b.
[0044]
Thereafter, the PD 6 was placed at a predetermined position on the wiring pattern 4a adjacent to the LD 5 in the optical axis direction, and the PD 6 was fixed to the mounting surface 4b in the same manner as in the case of the LD 5.
Here, the laminated structure of the LD 5 has a mesa stripe composed of an lnGaAsP active layer 5c and an n-InP clad layer 5f sequentially formed on a p-InP substrate 5e, a p-InP layer 5g embedding the mesa stripe, and An n-InP layer 5h, an n-InP clad layer 5i, an n-InGaAsP cap layer 5j, an n-type electrode 5k, and a p-type electrode formed on the back surface of the substrate 5e are sequentially stacked on the mesa stripe and the buried layer. 5l.
[0045]
Next, the mounting substrate 4 is placed on the second package 2b, and the Au wire 7 is used to connect between the wiring pattern 4a and the p-type electrode 51 of the LD 5 and between the wiring pattern 4a and the electrode of the PD 5 respectively. Connection, and also between the wiring pattern 4a and the lead 2b1.
[0046]
Thereafter, the first package 2a is put on the second package 2b so that the ridge 2a3 of the first package 2a engages with the V-shaped groove 4c of the mounting board 4, and the optical fiber 3 is inserted through the vertical hole 2a1, and Was coated with a thermosetting epoxy adhesive. Thereafter, the entire package was heated to fix the space between the first package and the second package and the space between the optical fiber 3 and the vertical hole 2a1.
Finally, the opening 2a2 was filled with an epoxy resin containing silica as a filler to seal the LD5 and the PD6.
Although the invention has been described with reference to a limited number of embodiments, those skilled in the art will conceive other embodiments without departing from the scope of the invention, taking advantage of the disclosure of the invention. It is possible.
[0047]
【The invention's effect】
The present invention has the following effects.
According to the present invention, the optical semiconductor element can be mounted on the mounting substrate even if a convex portion is generated in a manufacturing process in a predetermined structure such as a V-shaped groove or an electrode edge formed on the main surface of the optical semiconductor element. When mounting with junction down, it is possible to fix without gaps.
[0048]
Further, according to the present invention, the thermal resistance between the optical semiconductor element and the mounting substrate does not become abnormally high, and good temperature characteristics can be maintained.
Furthermore, according to the present invention, since the distance from the mounting surface of the mounting substrate to the center of the active layer of the optical semiconductor element can be maintained as designed, the optical coupling between the optical semiconductor element and the optical component can be prevented from being misaligned. The resulting optical coupling loss and its variation can be reduced.
[0049]
Further, according to the present invention, the fixing strength of the optical semiconductor element to the mounting substrate is ensured, and the accident that the optical semiconductor element comes off the mounting substrate when the optical semiconductor element is connected to an external circuit by wire bonding is reduced.
[Brief description of the drawings]
FIG. 1 is a perspective view of a mounting board used in one embodiment of an optical element mounting body of the present invention.
FIG. 2 is a partially exploded perspective view of the optical element mounting body of the present invention in the vicinity of a region I in FIG.
FIG. 3 is a plan view of one embodiment of the optical module of the present invention.
FIG. 4 is a sectional view taken along line II-II in FIG. 3;
FIG. 5 is a perspective view of a mounting substrate on which an LD and a PD are mounted, which constitutes the optical module of FIG. 3;
FIG. 6 is a sectional view taken along the line III-III in FIG. 3;
FIG. 7 is a sectional view of a semiconductor laser device disclosed in Japanese Patent Application Laid-Open No. 7-050449.
FIG. 8 is an enlarged view of a region IV in FIG. 7, and shows a projection that may be caused by abnormal growth.
FIG. 9 is a cross-sectional view of an optical semiconductor module disclosed in Japanese Patent Application Laid-Open No. Hei 10-206686.
FIG. 10 is an enlarged view of a region V in FIG. 7, showing a projection that may be formed on an electrode edge;
FIG. 11A is a sectional view showing another example of a semiconductor laser device. (B) is an enlarged view of a region VI in FIG. 11A and shows a projection that may be formed on an electrode edge.
[Explanation of symbols]
1. Optical module
2. package
2a. 1st package
2a1. Vertical hole
2a2. Opening
2a3. Ridge
2b. Second package
2b1. Lead
3. Optical fiber
4. Mounting board
4a. Wiring pattern
4b. Mounting surface
4c. V-shaped groove
4d. Recess
5. Semiconductor laser (LD)
5a. Main surface
5b. V-shaped groove
5c. Active layer
5d. Convex part
6. PD
7. Au wire

Claims (18)

Light emitting portion or light receiving portion, and an optical semiconductor element having a predetermined structure formed on the main surface,
An optical element mounting body comprising: a substrate having a mounting surface;
The substrate has a first concave portion on the mounting surface,
An optical element mounting body, wherein the optical semiconductor element is mounted on the substrate in a junction-down manner such that the structure of the optical semiconductor element faces the first concave portion of the substrate. The optical element package according to claim 1, wherein the structure is formed in a predetermined positional relationship with respect to the light emitting unit or the light receiving unit. The optical element package according to claim 2, wherein the structure is used as a positioning marker when positioning the light emitting unit or the light receiving unit on the substrate. 2. The optical element package according to claim 1, wherein the optical semiconductor element has a convex portion generated in a manufacturing process near the structure. 3. The optical device package according to claim 4, wherein the first concave portion receives the convex portion. 2. The optical element mounting body according to claim 1, wherein the structure is a second concave portion extending in parallel with a light emitting / receiving direction of the light emitting portion or the light receiving portion. The optical element package according to claim 6, wherein the second concave portion is a V-shaped groove. In the optical element package according to claim 6,
The optical element package according to claim 6, wherein the first concave portion extends in parallel with a light emitting / receiving direction of the light emitting portion or the light receiving portion. The optical element package according to claim 1, wherein the substrate is formed of silicon. The optical element package according to claim 9, wherein the first concave portion is formed by etching a part of the substrate. The optical element package according to claim 9, wherein the first recess has a width of 10 μm or more and a depth of 5 μm or more. The optical element package according to claim 4, wherein the convex portion is made of a semiconductor. The optical element package according to claim 1, wherein the protrusion is deposited during crystal growth. Light emitting portion or light receiving portion, and an optical semiconductor element having a predetermined structure formed on the main surface,
A substrate having a mounting surface;
An optical component optically coupled to the optical semiconductor element,
An optical module having a package that houses the optical semiconductor element and the substrate,
The substrate has a first concave portion on the mounting surface,
An optical module, wherein the optical semiconductor element is mounted on the substrate in a junction-down manner such that the structure of the optical semiconductor element faces the first concave portion of the substrate. The optical module according to claim 14, wherein the structure is formed in a predetermined positional relationship with the light emitting unit or the light receiving unit. The optical module according to claim 14, wherein the optical semiconductor element has a convex portion generated in a manufacturing process near the structure. The optical module according to claim 16, wherein the first concave portion receives the convex portion. The substrate is formed of silicon,
The optical module according to claim 14, wherein the first recess is formed by etching a part of the substrate.

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