JP2004103269A - Manufacture method for organic electroluminescence display device - Google Patents

Manufacture method for organic electroluminescence display device Download PDF

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JP2004103269A
JP2004103269A JP2002259650A JP2002259650A JP2004103269A JP 2004103269 A JP2004103269 A JP 2004103269A JP 2002259650 A JP2002259650 A JP 2002259650A JP 2002259650 A JP2002259650 A JP 2002259650A JP 2004103269 A JP2004103269 A JP 2004103269A
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deposition beam
organic el
deposition
display device
beam
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Japanese (ja)
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Kiyoshi Yoneda
米田 清
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Sanyo Electric Co Ltd
三洋電機株式会社
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Priority to JP2002259650A priority Critical patent/JP2004103269A/en
Priority claimed from TW92120183A external-priority patent/TWI252706B/en
Publication of JP2004103269A publication Critical patent/JP2004103269A/en
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Abstract

PROBLEM TO BE SOLVED: To make the thickness of a film of an organic electroluminescence material layer to be uniform, and to improve the precision of its pattern formation.
SOLUTION: An insulating substrate 100 is installed in a vacuum chamber and a shadow mask 101 is installed to face the insulating substrate 100 in a close proximity to it. A plurality of openings 102 are formed, corresponding to the pattern of each organic electroluminescence material layer in the shadow mask 101. A depositing beam generator 50 is installed facing the shadow mask 101. The organic electroluminescence material in a molten state and stored in a pooling part 51 of the depositing beam generator 50 is evaporated, and depositing beam 200 is discharged from the depositing beam discharge hole 52. Then, the depositing beam 200 is passed through a depositing beam passage hole 71 on a depositing beam direction adjusting plate 70 and discharged in the direction of the shadow mask 101 as depositing beam with improved orientation.
COPYRIGHT: (C)2004,JPO

Description

【0001】 [0001]
【発明の属する技術分野】 BACKGROUND OF THE INVENTION
本発明は、有機EL表示装置の製造方法に関し、特に有機EL材料の蒸着工程を含む有機EL表示装置の製造方法に関する。 The present invention relates to a method of manufacturing an organic EL display device, a method of manufacturing the organic EL display device in particular including a deposition process of organic EL material.
【0002】 [0002]
【従来の技術】 BACKGROUND OF THE INVENTION
近年、有機エレクトロルミネッセンス(Electro Luminescence:以下、「有機EL」と称する。)素子を用いた有機EL表示装置が、CRTやLCDに代わる表示装置として注目されており、例えば、その有機EL素子を駆動させるスイッチング素子として薄膜トランジスタ(Thin Film Transistor:以下「TFT」と称する。)を備えた有機EL表示装置の研究開発も進められている。 Recently, organic electroluminescent (Electro Luminescence:. Hereinafter referred to as "organic EL") organic EL display device using the element, it has attracted attention as a display device in place of a CRT or LCD, for example, driving the organic EL device is to the thin film transistor as a switching element: is also promoted research and development (Thin Film Transistor hereinafter referred to as "TFT".) the organic EL display device equipped with.
【0003】 [0003]
図6に従来の有機EL表示装置の一表示画素の断面図を示す。 It shows a cross-sectional view of one display pixel of a conventional organic EL display device in FIG. この表示画素はゲート電極11を有するゲート信号線と、ドレイン信号線(不図示)との交点付近に有機EL素子駆動用のTFTを備えている。 The display pixel includes a gate signal line having a gate electrode 11, the drain signal lines TFT for organic EL device driving in the vicinity of the intersection of the (not shown). そのTFTのドレインはドレイン信号線に接続されており、またゲート電極11はゲート信号線(不図示)に接続されており、更にソース13sはEL素子の陽極61に接続されている。 The drain of the TFT is connected to the drain signal line, and the gate electrode 11 is connected to the gate signal line (not shown), further a source 13s is connected to the anode 61 of the EL element. 実際のEL表示装置では、この画素が多数個、マトリックス状に配置され表示領域を構成している。 In actual EL display device, pieces this pixel number, are arranged in a matrix to constitute a display area. 以下で、この有機EL表示装置の製造方法について説明する。 Hereinafter, a method for manufacturing the organic EL display device.
【0004】 [0004]
表示画素は、ガラスや合成樹脂などから成る透明な絶縁性基板10上に、TFT及び有機EL素子を順に積層形成して成るものである。 Display pixels, on a transparent insulating substrate 10 made of glass or synthetic resin, those formed by laminating forming a TFT and the organic EL element in order. まず、絶縁性基板10上にクロム(Cr)等の高融点金属から成るゲート電極11を形成し、その上にゲート絶縁膜12、及びp−Si膜からなる能動層13を順に形成する。 First, a gate electrode 11 made of refractory metal such as chromium (Cr) on the insulating substrate 10 is formed, to form the active layer 13 made of the gate insulating film 12, and the p-Si film thereon in this order.
【0005】 [0005]
能動層13には、ゲート電極11上方のチャネル13cと、このチャネル13cの両側に、チャネル13c上のストッパ絶縁膜14をマスクにしてイオンドーピングし更にゲート電極11の両側をレジストにてカバーしてイオンドーピングしてゲート電極11の両側に低濃度領域とその外側に高濃度領域のソース13s及びドレイン13dが形成される。 The active layer 13, and the gate electrode 11 above the channel 13c, on both sides of the channel 13c, and then the stopper insulating film 14 on the channel 13c in the mask covering with a resist on both sides of the further gate electrode 11 by ion doping low concentration region between the source 13s and drain 13d of the high-density region on the outside thereof are formed on both sides of the gate electrode 11 by ion doping.
【0006】 [0006]
そして、ゲート絶縁膜12、能動層13及びストッパ絶縁膜14上の全面に、SiO 膜、SiN膜及びSiO 膜の順に積層された層間絶縁膜15を形成し、ドレイン13dに対応して設けたコンタクトホールにAl等の金属を充填してドレイン電極16を形成する。 Then, the gate insulating film 12 on the entire surface of the active layer 13 and stopper insulating film 14, SiO 2 film, an interlayer insulating film 15 are laminated in this order on the SiN film and the SiO 2 film, provided corresponding to the drain 13d by filling a metal such as Al to form a drain electrode 16 in the contact hole. 更に全面に例えば有機樹脂から成り表面を平坦にする平坦化絶縁膜17を形成する。 Further forming a planarization insulating film 17 to flatten the surface consists entirely of, for example, an organic resin.
【0007】 [0007]
そして、その平坦化絶縁膜17のソース13sに対応した位置にコンタクトホールを形成し、このコンタクトホールを介してソース13sとコンタクトしたITO(Indium Tin Oxide)から成るソース電極を兼ねた、陽極61を平坦化絶縁膜17上に形成する。 Then, a contact hole is formed in a position corresponding to the source 13s of the planarization insulating film 17, also serving as a source electrode consisting of a source 13s and contact the ITO (Indium Tin Oxide) through the contact hole, an anode 61 It is formed on the planarization insulating film 17. 陽極61はITO(Indium Tin Oxide)等の透明電極から成る。 The anode 61 is made of a transparent electrode such as ITO (Indium Tin Oxide). この陽極61の上に有機EL素子60を形成する。 Forming an organic EL element 60 over the anode 61.
【0008】 [0008]
有機EL素子60は、一般的な構造であり、陽極61、MTDATA(4,4−bis(3−methylphenylphenylamino)biphenyl)から成る第1ホール輸送層、TPD(4,4,4−tris(3−methylphenylphenylamino)triphenylanine)からなる第2ホール輸送層から成るホール輸送層62、キナクリドン(Quinacridone)誘導体を含むBebq2(10−ベンゾ〔h〕キノリノール−ベリリウム錯体)から成る発光層63、及びBebq2から成る電子輸送層64、マグネシウム・インジウム合金もしくはアルミニウム、もしくはアルミニウム合金から成る陰極65が、この順番で積層形成された構造である。 The organic EL element 60 is a general structure, the first hole transport layer made of an anode 61, MTDATA (4,4-bis (3-methylphenylphenylamino) biphenyl), TPD (4,4,4-tris (3- hole transport layer 62 made of a second hole transport layer made of methylphenylphenylamino) triphenylanine), quinacridone (quinacridone) Bebq2 including derivative (10-benzo [h] quinolinol - electron transporting consisting emitting layer 63, and Bebq2 consisting beryllium complex) layer 64, a magnesium-indium alloy or aluminum, or a cathode 65 made of an aluminum alloy, a laminated structure formed in this order.
【0009】 [0009]
有機EL素子60は、上記の有機EL素子駆動用のTFTを介して供給される電流によって発光する。 The organic EL element 60 emits light by current supplied through the TFT for the organic EL device driving described above. つまり、陽極61から注入されたホールと、陰極65から注入された電子とが発光層の内部で再結合し、発光層を形成する有機分子を励起して励起子が生じる。 That is, the holes injected from the anode 61 and electrons injected from the cathode 65 are recombined in the light emitting layer, excitons excite organic molecules forming the emissive layer occurs. この励起子が放射失活する過程で発光層63から光が放たれ、この光が透明な陽極61から絶縁性基板10を介して外部へ放出されて発光する。 The excitons light emitted from the light emitting layer 63 in the process of radiative deactivation, this light to emit light emitted from the transparent anode 61 to the outside through the insulating substrate 10.
【0010】 [0010]
上述した有機EL素子60のホール輸送層62、発光層63、電子輸送層64に用いられる有機EL材料は、耐溶剤性が低く、水分にも弱いという特性があるため、半導体プロセスにおけるフォトリソグラフィ技術を利用することができない。 Hole transport layer 62 of the organic EL device 60 described above, the light emitting layer 63, an organic EL material for the electron transport layer 64 has low solvent resistance, because of the weak that the characteristics in moisture, photolithography in semiconductor process can not be used. そこで、いわゆるシャドウマスクを用いた蒸着法により有機EL素子60のホール輸送層62、発光層63、電子輸送層64及び陰極65のパターン形成を行っていた。 Therefore, the hole transport layer 62 of the organic EL element 60 by an evaporation method using a so-called shadow mask, the light emitting layer 63 had a pattern was formed in the electron transport layer 64 and the cathode 65.
【0011】 [0011]
なお、関連する先行技術文献としては、以下の特許文献1がある。 Prior art documents related, there is Patent Document 1 below.
【0012】 [0012]
【特許文献1】 [Patent Document 1]
特開平11−283182号公報【0013】 Japanese Unexamined Patent Publication No. 11-283182 [0013]
【発明が解決しようとする課題】 [Problems that the Invention is to Solve
上述のシャドウマスクを用いた蒸着法により、有機EL素子60のパターン形成を行うに際して、図7(a)に示すように、シャドウマスク101は絶縁性基板100の表面に近接させて配置される。 By an evaporation method using a shadow mask described above, when the pattern formation of the organic EL element 60, as shown in FIG. 7 (a), the shadow mask 101 is arranged close to the surface of the insulating substrate 100. これはシャドウマスク101を絶縁性基板100に密着させると、その表面を損傷するおそれがあるためである。 This in adhering the shadow mask 101 on the insulating substrate 100, there is a possibility of damaging the surface.
【0014】 [0014]
そして、蒸着ビーム発生源(不図示)からの、有機EL材料を含む蒸着ビーム103が、シャドウマスク101に設けられた開口部102を通して、絶縁性基板100に放射される。 Then, from the deposition beam source (not shown), the deposition beam 103 including the organic EL material, through an opening 102 provided in the shadow mask 101, is radiated to the insulating substrate 100. すると、図7(b)に示すように、絶縁性基板100の表面の開口部102に対応する領域に、有機EL材料が蒸着される。 Then, as shown in FIG. 7 (b), in a region corresponding to the opening 102 of the surface of the insulating substrate 100, an organic EL material is deposited.
【0015】 [0015]
しかしながら、蒸着ビームの指向性が低いと、図7(a)に示すように、いわゆるシャドウ効果により、シャドウマスク101の開口部102のエッジから斜めに蒸着ビームが入射する成分を生じ、開口部102より広がった領域に蒸着されてしまう。 However, if the low directionality of the deposition beam, as shown in FIG. 7 (a), by the so-called shadow effect, resulting a component deposition beam obliquely from the edge of the opening 102 of the shadow mask 101 is incident, the openings 102 It will be deposited in a more extended area. また、開口部102の中央部からエッジに向かうにしたがい、蒸着ビームの密度の低下が起こる。 Also, toward the edge from the center of the opening 102, it takes place lowering of the density of the vapor deposition beam. その結果、蒸着された有機EL材料層201は、図7(b)に示すように、中央部では厚く、周辺部では薄くなり、不均一な層厚となってしまい、有機EL素子60の特性に悪影響を及ぼすおそれがあった。 As a result, the organic EL material layer 201 deposited, as shown in FIG. 7 (b), thick at the center, becomes thin at the periphery, becomes non-uniform layer thickness, characteristics of the organic EL element 60 there is an adverse effect on.
【0016】 [0016]
【課題を解決するための手段】 In order to solve the problems]
そこで、本発明は蒸着ビームの指向性を向上させることで、有機EL材料層の膜厚を均一化すること、及びそのパターン形成の精度を高めたものである。 Accordingly, the present invention is to improve the directivity of the vapor deposition beams, in which elevated to uniform the film thickness of the organic EL material layer, and the accuracy of the pattern formation.
【0017】 [0017]
すなわち、本発明は、真空チャンバー内に配置された被蒸着基板の表面に近接して蒸着マスクを配置し、蒸着ビーム発生源から有機EL材料を含む蒸着ビームを発生させ、この蒸着ビームを前記蒸着マスクの開口部に通し、前記基板の表面の所定領域に有機EL材料を蒸着する工程を含み、 That is, the present invention is close to the surface of the deposited substrate disposed in a vacuum chamber a deposition mask arranged to generate a deposition beam containing an organic EL material from the deposition beam source, the deposition of the vapor deposition beam through openings in the mask includes the step of depositing an organic EL material in a predetermined region of the surface of said substrate,
前記蒸着ビーム発生源に対向して、複数の蒸着ビーム通過孔を有する蒸着ビーム方向調整板を配置し、前記蒸着ビーム発生源から発生された蒸着ビームは前記複数の蒸着ビーム通過孔を通して前記蒸着マスクに放射されることを特徴とする。 To face the deposition beam source, arranged deposition beam direction adjustment plate having a plurality of deposition beam passing holes, the deposition mask deposition beam generated from the deposition beam generating source through said plurality of deposition beam passing holes characterized in that it is radiated to.
【0018】 [0018]
これにより、蒸着ビームの指向性を高め、有機EL材料層の膜厚をほぼ均一化することができる。 This increases the directivity of the vapor deposition beam can be substantially uniform thickness of the organic EL material layer.
【0019】 [0019]
【発明の実施の形態】 DETAILED DESCRIPTION OF THE INVENTION
次に、本発明の実施形態について図面を参照しながら詳細に説明する。 Next, embodiments of the present invention will be described in detail with reference to the drawings. 図1は蒸着ビーム発生源50及び前記蒸着ビーム発生源50に対向して設けられた蒸着ビーム方向調整板70の斜視図、図2は図1の断面図、図3は有機EL材料の蒸着工程を示す斜視図、図4は図3の断面図である。 Figure 1 is a perspective view of a deposition beam direction adjustment plate 70 provided opposite to the deposition beam source 50 and the deposition beam source 50, FIG. 2 is a sectional view of FIG. 1, FIG. 3 is a process of depositing an organic EL material perspective view of the FIG. 4 is a cross-sectional view of FIG.
【0020】 [0020]
本発明の有機EL表示装置の製造方法は、絶縁性基板10を用意し、この絶縁性基板10上に、有機EL素子駆動用のTFTや有機EL素子60を順次、形成していくが、有機EL素子60の形成工程を除いては従来例で説明した工程と同様である。 Method of manufacturing an organic EL display device of the present invention includes providing an insulating substrate 10, on the insulating substrate 10, the TFT and the organic EL element 60 for driving the organic EL device sequentially continue to form, but organic except for steps of forming the EL element 60 is similar to the process described in the prior art.
【0021】 [0021]
有機EL素子60を構成する、ホール輸送層62、発光層63、電子輸送層64及び陰極65は、シャドウマスク101を用いた蒸着法によりパターニングされる。 The organic EL element 60, a hole transport layer 62, light emitting layer 63, electron transport layer 64 and the cathode 65 is patterned by an evaporation method using a shadow mask 101.
【0022】 [0022]
蒸着ビーム発生源50は図1及び図2に示すように、所定形状の筐体の底部に有機EL材料の貯留部51が設けられている。 Deposition beam source 50, as shown in FIGS. 1 and 2, the storage portion 51 of the organic EL material is provided in the bottom of the casing of the prescribed shape.
【0023】 [0023]
貯留部51にはヒーター53が設けられ、貯留部51に収納された有機EL材料を加熱して溶融状態にするように構成されている。 Heater 53 is provided in the storage portion 51, and is configured to a molten state by heating the organic EL material stored in the storage unit 51. 貯留部51の上方には、蒸着ビーム放射孔52が複数個、筐体の長手方向に沿って一列に開口されている。 Above the reservoir 51, the vapor deposition beam radiation holes 52 a plurality, are opened in a row along the longitudinal direction of the housing. 蒸着ビームは、蒸着ビーム発生源50に取り付けられた複数の蒸着ビーム放射孔52から放射される。 Deposition beam is emitted from a plurality of evaporation beam radiation holes 52 attached to the vapor deposition beam source 50. さらに、前記蒸着ビーム放射孔52から放射された蒸着ビーム200は、蒸着ビーム発生源50上の蒸着ビーム放射孔52に対向して設けられた、蒸着ビーム方向調整板70上の複数の蒸着ビーム通過孔71を通されることにより、指向性の高められた蒸着ビーム210となる。 Further, the deposition beam evaporation beam 200 emitted from the radiation hole 52 is provided opposite to the deposition beam radiation holes 52 on the deposition beam source 50, a plurality of deposition beam passing on the deposition beam direction adjustment plate 70 by being passed through a hole 71, the deposition beam 210 that has been enhanced directivity.
【0024】 [0024]
蒸着ビーム放射孔52の数と蒸着ビーム通過孔71の数は一致していなくてもよい。 Count of the number of the deposition beam radiation holes 52 and the vapor deposition beam passing holes 71 may not coincide. また、蒸着ビーム通過孔71は蒸着ビーム方向調整板70から円筒をくり抜いた形状であることが好ましいが、これに限らず、角柱をくり抜いた形状であってもよい。 Further, the deposition beam passing holes 71 is preferably a shape hollowed out cylindrical from the deposition beam direction adjustment plate 70 is not limited thereto, it may have a shape hollowed out prism.
【0025】 [0025]
また、蒸着ビーム通過孔71の径は、指向性を十分高めるために約0.1mm〜1mmであることが好ましい。 The diameter of the vapor deposition beam passing holes 71 is preferably about 0.1mm~1mm in order to increase the directivity sufficient.
【0026】 [0026]
また、蒸着ビーム方向調整板70には、例えばヒーター(不図示)のような発熱体が取り付けられることで加熱されていることが好ましい。 Further, the deposition beam direction adjustment plate 70 is preferably, for example, heating elements such as a heater (not shown) is heated by being attached. あるいは、蒸着ビーム方向調整板70を発熱体で構成しても良い。 Alternatively, it may be constituted deposition beam direction adjustment plate 70 with the heating element. これにより、蒸着ビーム方向調整板70上の複数の蒸着ビーム通過孔71を通過する蒸着ビーム210が加熱され、蒸着材料が蒸着ビーム通過孔71に付着することが防止される。 Thus, deposition beam 210 that passes through a plurality of deposition beam passing holes 71 on the deposition beam direction adjustment plate 70 is heated, the deposition material is prevented from adhering to the deposition beam passing holes 71.
【0027】 [0027]
図3及び図4に示すように、真空チャンバー内に、有機EL駆動用TFT等が既に形成された絶縁性基板100を配置し、この絶縁性基板100に近接して対向するように、シャドウマスク101を配置する。 As shown in FIGS. 3 and 4, in a vacuum chamber, so that the insulating substrate 100 where the organic EL driving TFT or the like has already been formed and arranged, to face in proximity to the insulating substrate 100, the shadow mask placing 101.
【0028】 [0028]
シャドウマスク101には、各有機EL材料層のパターンに対応して複数の開口部102が形成されている。 The shadow mask 101, a plurality of openings 102 corresponding to the pattern of the organic EL material layers are formed. そして、シャドウマスク101に対向して、上述した蒸着ビーム発生源50を配置する。 Then, opposite to the shadow mask 101, arranging the deposition beam source 50 described above. さらに、蒸着ビーム発生源50に対向して複数の蒸着ビーム通過孔71を具備する蒸着ビーム方向調整板70を配置する。 Furthermore, placing the deposition beam direction adjustment plate 70 having a plurality of deposition beam passing holes 71 facing the deposition beam source 50.
【0029】 [0029]
そして、蒸着ビーム発生源50の貯留部51に収納され溶融状態の有機EL材料が蒸発し、蒸着ビーム放射孔52から蒸着ビーム200が放射される。 The organic EL material in a molten state stored in the storage portion 51 of the deposition beam source 50 is evaporated and deposited beam 200 is emitted from the deposition beam radiation holes 52. さらに蒸着ビーム200は、前記蒸着ビーム放射孔52に対向して設けられた蒸着ビーム方向調整板70上の蒸着ビーム通過孔71を通過され、指向性の高められた蒸着ビーム210となってシャドウマスク101の方向へ放射される。 Further deposition beam 200, the deposition beam radiation so as to face the hole 52 is passed through the vapor deposition beam passing holes 71 on the deposition beam direction adjustment plate 70 provided, the shadow mask becomes deposition beam 210 that has been enhanced directivity 101 in the direction of the radiation. そして、蒸着ビーム発生源50及び蒸着ビーム方向調整板70を、シャドウマスク101に対して同時に平行移動させることで、シャドウマスク101の全面に渡って、指向性の高められた蒸着ビーム210が照射される。 Then, the deposition beam source 50 and the vapor deposition beam direction adjustment plate 70, by moving simultaneously parallel to the shadow mask 101, over the entire surface of the shadow mask 101, deposition beam 210 is irradiated elevated directivity that. これにより、各有機EL材料層のパターンが形成される。 Thus, the pattern of the organic EL material layers are formed.
【0030】 [0030]
なお、蒸着ビーム発生源50及び蒸着ビーム方向調整板70をシャドウマスク101に対して同時に平行移動させる際、図中では、蒸着ビーム発生源50と蒸着ビーム方向調整板70は非連結状態で同時に移動する例として図示したが、一体型として物理的に連結されていても良い。 Note that when simultaneously moved parallel deposition beam source 50 and the vapor deposition beam direction adjustment plate 70 relative to the shadow mask 101, in the figure, the deposition beam source 50 and the vapor deposition beam direction adjustment plate 70 at the same time in the non-connected state mobile illustrated as an example of it, it may be physically connected as an integral. また、蒸着ビーム発生源50及び蒸着ビーム方向調整板70はシャドウマスク101に対して相対的に移動させればよいので、蒸着ビーム発生源50及び蒸着ビーム方向調整板70の位置を固定し、絶縁性基板100及びシャドウマスク101を移動させても良い。 Further, the deposition beam source 50 and the vapor deposition beam direction adjustment plate 70 since it is sufficient to move relative to the shadow mask 101, to fix the position of the deposition beam source 50 and the vapor deposition beam direction adjustment plate 70, insulating sex substrate 100 and shadow mask 101 may be moved.
【0031】 [0031]
図5に、蒸着ビーム104がシャドウマスク101を通して絶縁性基板100に照射されている様子を示す。 Figure 5 shows how the deposition beam 104 is irradiated to the insulating substrate 100 through a shadow mask 101. 図5(a)に示すように、すべての蒸着ビーム210の方向は、シャドウマスク101及び絶縁性基板100に対して、ほぼ垂直に揃えられているので、シャドウ効果が無くなり、開口部102より広がった領域に蒸着されることが防止される。 As shown in FIG. 5 (a), the direction of all of the deposition beam 210 with respect to the shadow mask 101 and the insulating substrate 100, since the aligned substantially vertically, eliminating the shadow effect, extends from the opening 102 It is deposited on the areas that are prevented. また、蒸着後の有機EL材料201の厚さは全体に渡って均一となる。 The thickness of the organic EL material 201 after the deposition is uniform throughout.
【0032】 [0032]
また、絶縁性基板100に近接して対向するように、シャドウマスク101を配置する際には、所定間隔(例えば数十ミクロン)の距離を離すために、絶縁性基板100とシャドウマスク101との間に複数のスペーサ105を設けると良い。 Also, so as to face in proximity to the insulating substrate 100, when arranging the shadow mask 101, in order to increase the distance of a predetermined interval (e.g., several tens of microns), the insulating substrate 100 and the shadow mask 101 it may be provided a plurality of spacers 105 between. これにより、絶縁性基板100にシャドウマスク101が接触して、絶縁性基板100の表面の膜や素子を損傷することが防止される。 Thus, in contact shadow mask 101 on the insulating substrate 100, is prevented from damaging the surface of the film or element of the insulating substrate 100.
【0033】 [0033]
また、有機EL材料層には、ホール輸送層62、発光層63、電子輸送層64及び陰極65というように、複数の層がある。 Further, the organic EL material layer, the hole transport layer 62, light emitting layer 63, and so the electron transport layer 64 and the cathode 65, there is a plurality of layers. そこで、例えば、1つの真空チャンバー内でホール輸送層62を蒸着した後に、ホール輸送層62が蒸着された絶縁性基板100は別の真空チャンバーに移送され、そこで同様な工程を繰り返すことによって、ホール輸送層62の上層の発光層63が形成される。 Therefore, for example, after depositing a hole transport layer 62 in one vacuum chamber, the insulating substrate 100 a hole transporting layer 62 is deposited is transferred to another vacuum chamber, where by repeating similar steps, holes the upper layer of the light-emitting layer 63 of the transport layer 62 is formed. こうして、ホール輸送層62、発光層63、電子輸送層64及び陰極65が順次、積層形成され、有機EL素子60が形成される。 Thus, the hole transport layer 62, light emitting layer 63, electron transport layer 64 and the cathode 65 are sequentially formed and layered, the organic EL element 60 is formed.
【0034】 [0034]
なお、上記実施形態では、蒸着ビーム放射孔52及び蒸着ビーム通過孔71が複数個、筐体の長手方向に沿って一列に立設されてリニアソースを構成しているが、これに限らず、蒸着ビーム放射孔52及び蒸着ビーム通過孔71は行列状に配置しても良い。 In the above embodiment, the deposition beam radiation holes 52 and deposition beam passing holes 71 a plurality, but are erected in a row along the longitudinal direction of the housing constitutes a linear source, not limited to this, deposition beam radiation holes 52 and deposition beam passing holes 71 may be arranged in a matrix.
【0035】 [0035]
【発明の効果】 【Effect of the invention】
本発明によれば、蒸着法を用いて有機EL素子を形成するに際して、蒸着ビームを、蒸着ビーム発生源に設けられた複数の蒸着ビーム放射孔と、前記蒸着ビーム放射孔に対向して設けられた複数の蒸着ビーム通過孔を通して放射しているので、蒸着ビームの指向性が向上し、有機EL材料層の膜厚を均一化すること、及びそのパターン形成の精度を高めることが可能になり、有機EL素子を組み込んだ有機EL表示装置の特性向上、歩留まり向上に寄与することができる。 According to the present invention, in forming the organic EL device by vapor deposition, the deposition beam, and a plurality of deposition beam radiation holes provided in the deposition beam source, provided opposite to the deposition beam radiating holes since the radiation through a plurality of deposition beam passing holes, improved directivity of the deposition beam to uniform the film thickness of the organic EL material layer, and it is possible to improve the accuracy of the pattern formation, improving characteristics of the organic EL display device incorporating the organic EL element, it is possible to contribute to improvement in yield.
【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS
【図1】本発明の実施形態に係る有機EL素子の製造方法に用いる蒸着ビーム発生源の斜視図である。 1 is a perspective view of a deposition beam source used in the manufacturing method of the organic EL element according to an embodiment of the present invention.
【図2】本発明の実施形態に係る有機EL素子の製造方法に用いる蒸着ビーム発生源の断面である。 2 is a cross-section of a deposition beam source used in the manufacturing method of the organic EL element according to an embodiment of the present invention.
【図3】本発明の実施形態に係る有機EL表示装置の製造方法を説明する図である。 3 is a diagram for explaining a method of manufacturing the organic EL display device according to the embodiment of the present invention.
【図4】本発明の実施形態に係る有機EL表示装置の製造方法を説明する図である。 4 is a diagram for explaining a method of manufacturing the organic EL display device according to the embodiment of the present invention.
【図5】本発明の実施形態に係る有機EL表示装置の製造方法を説明する図である。 5 is a diagram for explaining a method of manufacturing the organic EL display device according to the embodiment of the present invention.
【図6】有機EL表示装置の一表示画素の断面図である。 6 is a cross-sectional view of one display pixel of an organic EL display device.
【図7】従来例に係る有機EL表示装置の製造方法を説明する図である。 7 is a diagram for explaining a method of manufacturing the organic EL display device according to a conventional example.
【符号の説明】 DESCRIPTION OF SYMBOLS
50 蒸着ビーム発生源 51 貯留部 52 蒸着ビーム放射孔53 ヒーター 70 蒸着ビーム方向調整板 71蒸着ビーム通過孔100 絶縁性基板 101 シャドウマスク 102 開口部105 スペーサ 200 蒸着ビーム210 指向性が高められた蒸着ビーム 50 deposition beam source 51 reservoir 52 deposition beam radiation holes 53 heaters 70 deposition beam direction adjustment plate 71 deposited beam passing holes 100 insulating substrate 101 the shadow mask 102 deposited beam opening 105 spacer 200 deposition beam 210 directed is increased

Claims (4)

  1. 真空チャンバー内に配置された被蒸着基板の表面に近接して蒸着マスクを配置し、蒸着ビーム発生源から有機EL材料を含む蒸着ビームを発生させ、この蒸着ビームを前記蒸着マスクの開口部に通し、前記基板の表面の所定領域に有機EL材料を蒸着する工程を含み、 Close to the surface of the deposited substrate disposed in a vacuum chamber a deposition mask arranged to generate a deposition beam containing an organic EL material from the deposition beam source, passed through the vapor deposition beam to the opening of the deposition mask includes the step of depositing an organic EL material in a predetermined region of the surface of said substrate,
    前記蒸着ビーム発生源に対向して、複数の蒸着ビーム通過孔を有する蒸着ビーム方向調整板を配置し、前記蒸着ビーム発生源から発生された蒸着ビームは前記複数の蒸着ビーム通過孔を通して前記蒸着マスクに放射されることを特徴とする有機EL表示装置の製造方法。 To face the deposition beam source, arranged deposition beam direction adjustment plate having a plurality of deposition beam passing holes, the deposition mask deposition beam generated from the deposition beam generating source through said plurality of deposition beam passing holes method of manufacturing an organic EL display device characterized in that it is radiated to.
  2. 前記複数の蒸着ビーム通過孔は、前記蒸着ビーム方向調整板の長手方向に一列に設けられていることを特徴とする請求項1記載の有機EL表示装置の製造方法。 Wherein the plurality of deposition beam passing holes, the production method according to claim 1 the organic EL display device, wherein the provided in line in the longitudinal direction of the deposition beam direction adjustment plate.
  3. 前記蒸着ビーム方向調整板が発熱体により加熱されることを特徴とする請求項1または請求項2記載の有機EL表示装置の製造方法。 Production process of the deposition beam direction adjustment plate organic EL display device according to claim 1 or claim 2 wherein, characterized in that it is heated by the heating element.
  4. 前記蒸着ビーム方向調整板が発熱体で構成されていることを特徴とする請求項1または請求項2記載の有機EL表示装置の製造方法。 Production process of the deposition beam direction adjustment plate organic EL display device according to claim 1 or claim 2, wherein it is configured with the heating element.
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