JP2004082260A - Method of manufacturing mems device - Google Patents

Method of manufacturing mems device Download PDF

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Publication number
JP2004082260A
JP2004082260A JP2002246367A JP2002246367A JP2004082260A JP 2004082260 A JP2004082260 A JP 2004082260A JP 2002246367 A JP2002246367 A JP 2002246367A JP 2002246367 A JP2002246367 A JP 2002246367A JP 2004082260 A JP2004082260 A JP 2004082260A
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Japan
Prior art keywords
ribbon
layer
film
forming
mems
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Abandoned
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JP2002246367A
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Japanese (ja)
Inventor
Takeshi Taniguchi
谷口 武士
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Sony Corp
ソニー株式会社
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Priority to JP2002246367A priority Critical patent/JP2004082260A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a MEMS (micro electro mechanical system) device without damaging a ribbon member. <P>SOLUTION: A resist mask 56 having a resist pattern having opening parts 54 of a width the same as a width of a ribbon member 19 of the MEMS device at intervals the same as intervals of the ribbon members 19 is formed on a sacrifice layer 24, when a ribbon member forming layer is formed on the sacrifice layer 24 in manufacturing the MEMS device. An upper layer part of the sacrifice layer is etched to form recessed parts 58 of a width the same as the width of the ribbon member at intervals same as the intervals of the ribbon members, and projecting parts 60 of a width the same as the interval of the ribbon members are also formed. The ribbon member forming layer 46 is formed on the whole surface on the sacrifice layer. The CMP treatment is performed on the ribbon member forming layer on the sacrifice layer, and the ribbon member forming layer on the projecting parts of the sacrifice layer, and the projecting parts of the sacrifice layer are abraded to be eliminated. Whereby the ribbon member forming layer can be divided into ribbon members at predetermined intervals with a specific width by performing the patterning to the ribbon member forming layer. Then the sacrifice layer is eliminated by etching similarly as a conventional method, to form the ribbon members. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method of manufacturing a MEMS device, and more particularly, to a method of manufacturing a MEMS device that does not damage a ribbon member constituting a driving body.
[0002]
[Prior art]
With the development of microtechnology, a so-called micro machine (MEMS: Micro Electro-Mechanical System, micro-electrical / mechanical composite) element and a small device incorporating such a MEMS element have attracted attention.
[0003]
The MEMS element is formed as a fine structure on a substrate such as a silicon substrate or a glass substrate, and outputs a mechanical driving force, a driving mechanism for driving the driving body, and a semiconductor integrated circuit for controlling the driving mechanism. Are electrically and mechanically coupled.
The basic feature of the MEMS element is that a driver configured as a mechanical structure is incorporated in a part of the element, and the driver is driven by applying Coulomb attraction between electrodes and the like. It is done electrically.
For example, as one of the MEMS elements, an optical MEMS element that functions as a light modulation element by utilizing the movement of a driver for light reflection or diffraction has been developed.
[0004]
Here, the structure of the optical MEMS device will be described with reference to FIGS. 2A and 2B are a perspective view showing the configuration of an optical MEMS element having a doubly supported structure, and a cross-sectional view taken along line II in FIG. 2A, respectively. 3A and 3B are respectively a perspective view showing a configuration of an optical MEMS element having a cantilever structure, and a cross-sectional view taken along line II-II in FIG.
The optical MEMS element 10 having a doubly supported structure is a typical example of an optical MEMS element used as an optical switch or an optical modulation element that controls the reflection or diffraction of light using electrostatic attraction or electrostatic repulsion. As shown in FIG. 2, an insulating substrate 12, a lower electrode 14 formed on the insulating substrate 12, a bridge member 16 made of an insulating film, and an upper portion laminated on the bridge member 16. And a striped ribbon member 19 composed of the electrode / reflection film 18.
[0005]
A ribbon member 19 made of a laminated film of the bridge member 16 and the upper electrode / reflective film 18 is supported on the insulating substrate 12 by a columnar portion 20 made of the same laminated film at both ends as a doubly supported beam, and a gap 22 is formed. The lower electrode 14 is electrically insulated from the lower electrode 14 and is provided in a bridge shape so as to cross the lower electrode 14.
[0006]
As the insulating substrate 12, a substrate in which an insulating film is formed on a semiconductor substrate such as silicon (Si) or gallium arsenide (GaAs), or an insulating substrate such as a quartz substrate or a glass substrate is used.
The lower electrode 14 is formed of, for example, a metal film such as a polycrystalline silicon film doped with an impurity, a W vapor-deposited film, or a Cr vapor-deposited film.
The insulating film forming the bridge member 16 is an insulating film such as a silicon nitride film (SiN film) having a thickness of, for example, 100 μm to 300 μm, and the upper electrode / reflective film 18 is formed of, for example, an Al film having a thickness of 50 μm to 300 μm. It is configured as a drive-side electrode also serving as a reflection film.
[0007]
In the optical MEMS element 10, a stacked film of the bridge member 16 and the upper electrode / reflective film 18 is formed by electrostatic attraction or electrostatic repulsion generated according to a potential applied between the lower electrode 14 and the upper electrode / reflective film 18. Is displaced with respect to the lower electrode 14 into a recessed state (dotted line) and a state parallel to the lower electrode 14, as shown by, for example, a broken line and a solid line in FIG.
[0008]
Further, the optical MEMS device having a cantilever structure supporting one end of a ribbon member composed of a laminated film of a bridge member and an upper electrode also has an electrostatic attractive force or an electrostatic repulsive force, like the optical MEMS device 10 having a doubly supported structure. It is used as an optical switch, a light modulation element, or the like that controls the reflection and diffraction of light by utilizing light.
As shown in FIG. 3, the optical MEMS element 30 having a cantilever structure includes an insulating substrate 32, a lower electrode 34 formed on the insulating substrate 32, a bridge member 36 made of an insulating film, and a bridge member. And an upper electrode / reflection film 38 laminated on the upper electrode 36.
In the optical MEMS device 30, a fragment formed of a laminated film of the bridge member 36 and the reflection film 38 also serving as the upper electrode is formed by electrostatic attraction or repulsion generated according to a potential applied between the lower electrode 34 and the upper electrode 38. The holding beam-shaped ribbon member 39 is displaced into a state inclined (dotted line) and a state parallel to the lower electrode 34 as shown by a broken line and a solid line in FIG. 3B, for example.
[0009]
These optical MEMS elements 10 and 30 utilize the fact that light applied to the surfaces of the upper electrodes 18 and 38 also serving as a light reflection film is reflected in different directions according to the driving positions of the bridge members 16 and 36. It is applied as an optical switch having a switching function of detecting reflected light in a direction and thereby turning on / off an electric input.
Further, as described later, the optical MEMS elements 10 and 30 can also be applied as a light modulation element that utilizes a diffraction of light by arranging a plurality of ribbon members 19 and 39 in parallel.
[0010]
Next, a method for manufacturing the optical MEMS device 10 having a doubly supported structure will be described with reference to FIGS. FIGS. 4A to 4E are cross-sectional views taken along line II of FIG. 2 for respective steps when the optical MEMS device 10 having the double-supported beam structure is manufactured.
As shown in FIG. 4A, a metal film such as a W (tungsten) film is formed on the insulating substrate 12 and patterned to form the lower electrode 14.
Next, as shown in FIG. 4B, an amorphous silicon film or a polysilicon film is formed on the entire surface of the insulating substrate 12 and is patterned to form a sacrifice layer 24 on the lower electrode 14.
The sacrificial layer 24 functions as a support layer for forming the next bridge member 16, and is eventually removed as described later. Therefore, the sacrificial layer 24 is made of an amorphous silicon film or a polysilicon film having a large etching selectivity with respect to the oxide film, the nitride film, and the metal film constituting the lower electrode 14, the bridge member 16, and the upper electrode reflective film 18. And so on.
[0011]
Subsequently, as shown in FIG. 4C, an insulating film, for example, a SiN film 42 is formed on the entire surface of the insulating substrate 12, and an Al film 44 is further formed as a layer for forming the upper electrode / reflective film 18. To form a ribbon member forming layer 46.
Next, as shown in FIG. 4D, the ribbon member forming layer 46 is patterned to contact the sacrifice layer 24, straddle the sacrifice layer 24, and bridge the bridge member 16 standing on the insulating substrate 12 and the upper portion. A ribbon member 19 made of a laminated film with the electrode / reflection film 18 is formed.
Next, the sacrificial layer 24 made of an amorphous silicon film or a polysilicon film is removed by a dry etching method using XeF 2 gas or the like to form the optical MEMS device 10 as shown in FIG. The space 22 is obtained by removing the sacrificial layer 24.
[0012]
As shown in FIG. 5, a device in which a plurality of optical MEMS elements 10 are arranged in parallel is a GLV (Grating Light Valve) device 50, which is used as one of the light intensity conversion elements. FIG. 5 is a perspective view showing the configuration of the GLV device.
The GLV device 50 is configured such that a plurality of ribbon members 19 alternately change the height of the reflection film 18 on the ribbon members 19 by an operation of approaching and separating from the lower electrode 94 every other, and the diffraction of light is performed. The intensity of the light reflected by the reflection film 18 is modulated.
[0013]
Meanwhile, when manufacturing the GLV device 50, before removing the sacrificial layer 24 (see FIG. 4), the ribbon member forming layer 46 (see FIG. 4) is patterned to form a plurality of stripes as shown in FIG. It is necessary to divide the ribbon member 19 into a ribbon shape. FIG. 6 is a plan view showing a state where the ribbon member forming layer 46 is patterned and divided into ribbon members 19.
[0014]
Therefore, conventionally, as shown in FIG. 7A, a SiN film 42 for forming the bridge member 16 and an Al film 44 for forming the upper electrode / reflective film 18 are formed on the sacrificial layer 24 to form a ribbon member forming layer. After forming the resist member 46, a resist film is formed on the ribbon member forming layer 46, and subsequently, the resist film is patterned to have a stripe-shaped opening as shown in FIG. A resist mask 52 covering the region is formed.
Subsequently, as shown in FIG. 7C, the ribbon member forming layer 46 is etched by RIE or the like to divide the ribbon member 19 into a ribbon member 19 formed of a stripe-shaped laminated film.
FIGS. 7A to 7C are cross-sectional views illustrating respective steps of a conventional MEMS device manufacturing method.
[0015]
[Problems to be solved by the invention]
By the way, when the ribbon member forming layer is processed into a stripe shape by etching by the RIE method, as shown in FIG. 8, a polymer resulting from the resist film and Al, N, Si, A combined etching residue such as O often occurs on the bottom surface and the side wall of the groove-shaped concave portion between the ribbon member 19 and the adjacent ribbon member 19.
For this reason, in the subsequent sacrifice layer removing step, an etching stop phenomenon in which the etching of the sacrifice layer is stopped during the etching, a phenomenon in which the etching of the sacrifice layer becomes non-uniform, and the like occur. In some cases, the ribbon member cannot be hollowed out, or stress concentration occurs only in a part of the ribbon member, thereby damaging the ribbon member.
Therefore, as a countermeasure, conventionally, after the etching of the ribbon member forming layer, a normal cleaning process using a chemical solution is performed to remove the etching residue.
[0016]
However, it is more difficult to remove the etching residue deposited on the etching groove formed by etching the ribbon member forming layer than the residue deposited on the flat ribbon member forming layer. However, if a chemical having a strong cleaning effect is used to completely remove the etching residue, there is a concern that the ribbon member forming layer may be damaged. That is, it has been difficult in practice to find a method that satisfies both the complete removal of the residue and the prevention of damage to the ribbon member forming layer or the ribbon member.
[0017]
In particular, in the removal of the residue derived from the oxide film, a chemical solution containing HF or NH 4 F as a component is used. Therefore, when the Al film is used as the upper electrode / reflection film, the Al surface is corroded. Easy to do. Therefore, there is a trade-off between the effect of residue removal and the problem of corrosion of the Al surface.
If the removal of the residue is insufficient, when etching the sacrificial layer made of Si, an etching gas such as XeF 2 having a very high selectivity to SiO 2 of 1: 1000 or more is used. In some cases, etching does not start. In addition, etching may locally proceed from a region with a small amount of residue, leading to stress concentration or the like on the ribbon member forming layer or the ribbon member, leading to destruction.
[0018]
In the above description, the etching of the ribbon member forming layer made of the laminated film is described as an example.However, even if the ribbon member forming layer is formed of a single layer film, the etching residue is generated in the same manner. The problem is the same.
[0019]
Accordingly, an object of the present invention is to provide a method for manufacturing a MEMS device without damaging the ribbon member.
[0020]
[Means for Solving the Problems]
In order to achieve the above object, a method for manufacturing a MEMS device according to the present invention comprises a strip-shaped ribbon member supported on a substrate in a doubly-supported or cantilever-type structure through a gap, and a ribbon member. And a driving mechanism for driving the ribbon member by the driving mechanism, a method for manufacturing a MEMS device including a plurality of MEMS elements arranged in parallel on a substrate at a predetermined distance apart from each other,
Forming a sacrificial layer in a predetermined area on the substrate;
Patterning the upper layer of the sacrificial layer, forming a plurality of stripe-shaped recesses having the same width as the width of the ribbon member at a predetermined distance,
Next, a step of forming a ribbon member forming layer for forming a ribbon member on the substrate including the entire surface of the sacrificial layer;
A CMP processing step of polishing and removing the ribbon member forming layer and the sacrificial layer on the sacrificial layer between the concave portions by the CMP process and leaving the ribbon member in the concave portions;
Removing the sacrificial layer and forming a ribbon member supported in a doubly supported or cantilevered structure on the substrate via the gap.
[0021]
There is no restriction on the type and number of films constituting the ribbon member or the ribbon member forming layer. For example, even if a single layer film is formed as the ribbon member forming layer, a laminated film of an insulating film and a conductive film is formed. It may be a film.
In the step of patterning the sacrificial layer, a second stripe-shaped concave portion perpendicular to the longitudinal direction may be formed in the stripe-shaped concave portion. This makes it possible to form concave portions extending in a lattice shape and further divide the striped ribbon member along the longitudinal direction.
[0022]
Further, as the ribbon member forming layer, a laminated film including the ribbon member forming layer and the protective layer provided on the ribbon member forming layer is formed, and in the CMP process, an extremely thin protective layer is left on the ribbon member. CMP processing may be performed as described above. By providing the protective layer, the stripe member can be protected from the atmosphere of the CMP processing.
[0023]
In the step of forming the sacrificial layer, a SiO 2 film that can be removed by etching with HF or BHF, or a Si film that can be removed by etching with SF 6 or XeF 2 gas is formed as the sacrificial layer.
Further, as the ribbon member forming layer, for example, Si 3 N 4 , SiO 2 , Al, Si, and the like can be given as those capable of obtaining a sufficient etching selectivity with respect to the sacrificial layer. In addition to the above film types, a material that can be used as a ribbon member forming layer and a sufficient etching selectivity with respect to the ribbon member forming layer can be obtained, and a sacrificial layer of a material that can be isotropically etched, or Any combination with a sacrifice layer made of a material capable of performing anisotropic etching that depends on the crystal orientation in which a hollow structure can be formed may be used.
[0024]
In the method of the present invention, when a ribbon member forming layer constituting a hollow structure (ribbon member) of a MEMS device is processed into a lattice shape or a slit shape to form a plurality of ribbon members constituting a MEMS device, a conventional method is used. Instead of patterning by etching, a concave portion is formed in advance in a region where a ribbon member is to be formed, and a convex portion is formed in a region where ribbon members are not formed, in a sacrificial layer as an underlayer.
Next, a ribbon member forming layer is formed into a film, and the ribbon member forming layer on the convex portion is polished and removed by CMP, thereby leaving the ribbon member in the concave portion. Further, the sacrificial layer is removed by etching to form a ribbon member.
Through the above steps of the method of the present invention, it is possible to manufacture a MEMS device having a plurality of ribbon members separated by a predetermined width and a predetermined distance and exhibiting a predetermined performance without damaging the ribbon member. .
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described specifically and in detail with reference to the accompanying drawings by way of example embodiments.
Embodiment Example This embodiment is an example of an embodiment of a method for manufacturing a MEMS device according to the present invention, and FIGS. 1A to 1D respectively show a method according to this embodiment. FIG. 4 is a cross-sectional view of each step of patterning a ribbon member forming layer when forming a MEMS device by using FIG.
In the present embodiment, when the MEMS device 50 is manufactured, before forming the laminated film of the SiN film 42 forming the bridge member 16 and the Al film 44 forming the upper electrode / reflective film 18 on the sacrificial layer 24, First, as shown in FIG. 1A, a resist mask 56 having a resist pattern having openings 54 having the same width as the ribbon member 19 at the same interval as the ribbon member 19 of the MEMS device 50 is sacrificed. It is formed on the layer 24.
[0026]
Then, as shown in FIG. 1B, the upper layer portion of the sacrificial layer 24 is etched from above the resist mask 56 to form recesses 58 having the same width as the ribbon member 19 at the same interval as the ribbon members 19. At the same time, the protrusion 60 having the same width as the interval between the ribbon members 19 is formed.
[0027]
Then, as shown in FIG. 1C, a ribbon member forming layer 46 made of an SiN film 42 for forming the bridge member 16 and an Al film 44 for forming the upper electrode / reflective film 18 is formed on the entire surface of the sacrificial layer 24. I do.
There is no limitation on the thickness of the ribbon member forming layer 46 and the thickness of the sacrificial layer 24. Polysilicon or amorphous-Si is used for the sacrifice layer 24, but if there is no restriction in the depth direction of the sacrifice layer 24, the sacrifice layer 24 can be formed of bare Si.
Subsequently, as shown in FIG. 1D, CMP processing is performed on the ribbon member forming layer 46 on the sacrificial layer 24 to form the ribbon member forming layer 46 on the convex portion 60 of the sacrificial layer 24 and the convex portion of the sacrificial layer 24. Polish 60 and remove. Thereby, the ribbon member forming layer 46 can be patterned and divided into the ribbon member 19 including the bridge member 16 and the reflection film 18 also serving as the upper electrode.
Next, the sacrifice layer 24 is etched and removed in the same manner as in the related art, so that the ribbon members 19 having a predetermined width and separated at predetermined intervals can be formed on the substrate 12 (see FIG. 6).
[0028]
In the present embodiment, a resist mask 56 is formed on the sacrificial layer 24 before the ribbon member forming layer 46 is formed, and then the sacrificial layer 24 is etched using RIE or the like. Here, the region where the sacrificial layer 24 is not etched corresponds to the interval between the ribbon members 19, that is, the separation region of the ribbon member 19.
Next, the ribbon member forming layer 46 is formed. The ribbon member forming layer 46 has a shape in which the separation area of the ribbon member 19 rises according to the shape of the underlying sacrificial layer 24. After that, a raised portion is removed by performing a CMP process.
Thereby, the ribbon member 19 having a predetermined width can be separated at a predetermined interval without a residue generated by etching of the ribbon member forming layer 46 by the conventional RIE. Next, by removing the sacrificial layer 24, the ribbon member 19 having a predetermined width and no damage can be formed.
[0029]
Embodiment In this embodiment, as shown in FIG. 1B, a 200 nm to 1000 nm thick sacrificial layer 24 made of polysilicon is dry-etched by RIE to have a depth of 100 nm to 800 nm and a width of 200 nm. A stripe-shaped concave portion 58 of about 3000 nm was formed in the ribbon member forming region of the sacrificial layer 24.
Then, as shown in FIG. 1C, an SiN layer 42 having a thickness of 100 to 300 nm is formed on the sacrificial layer 24 as an insulating film, and an Al film 44 having a thickness of 50 to 300 nm is formed thereon as a reflective film also serving as an upper electrode. A film was formed.
Next, as shown in FIG. 1D, the SiN film 42 and the Al film 44 on the convex portions 60 of the sacrificial layer 24 and the convex portions 60 of the sacrificial layer 24 are polished and removed by CMP, and the concave portions 58 are removed. A flat surface is formed with the Al film 44 as the upper surface.
As a result, the ribbon member 19 made of a laminated film of the bridge member 16 made of the SiN film 42 and the upper electrode / reflective film 18 made of the Al film 44 was formed in the recess 58 of the sacrificial layer 24.
[0030]
XeF 2 gas used for isotropic etching of Si constituting the sacrifice layer 24 has a high selectivity of 1: 10000 or more with respect to SiO 2 , Al and the like. It also has a sufficiently high selectivity of about 1: 500 to 750 with respect to Si 3 N 4 .
Therefore, when a thin film of SiO 2 , Al, Si 3 N 4 or the like is formed as a forming layer of the ribbon member 19, Si is previously deposited as the underlying sacrificial layer 24, and the Si is removed, a high selectivity is obtained. By using the XeF 2 gas, the underlying Si sacrificial layer 24 can be removed with little damage to the ribbon member 19.
[0031]
In the present embodiment, although residues are generated when patterning the sacrificial layer 24 using the RIE method, there is an effect that they can be removed at the same time during the CMP processing.
If the surface of the ribbon member 19 is Al and the surface is not to be exposed to the atmosphere of the CMP processing as in the present embodiment, a SiO 2 film is further formed on the Al film 42 as a protective film, and the CMP process is performed. At the time of processing, if the CMP process is completed with the SiO 2 film remaining thin, the Al surface is protected by the SiO 2 film, so that the Al surface is not likely to be roughened.
Further, as the number of multilayer films constituting the ribbon member increases, the etching conditions become more strict in patterning the multilayer film by the conventional RIE method, and the generation of residues generally increases. However, in the present embodiment, since the ribbon member forming layer is divided into the ribbon members by physical processing by the CMP processing, the condition setting of the CMP processing requires that the number of multilayer films be smaller than that of the patterning by the RIE method. It has the advantage of not being affected.
[0032]
In the present embodiment, the MEMS device in which the ribbon member has a doubly supported beam type is taken as an example. However, the method of the present invention can be applied to the manufacture of a MEMS device in which the ribbon member is a cantilever type.
[0033]
【The invention's effect】
According to the method of the present invention, the upper layer of the sacrificial layer is patterned to form a plurality of stripe-shaped recesses having the same width as the width of the ribbon member at a predetermined distance, and the ribbon member is formed on the substrate including the entire surface of the sacrificial layer. The ribbon member forming layer to be formed is formed, then the ribbon member is separated into concave portions by CMP processing of the ribbon member forming layer, the sacrifice layer is etched, and the double-sided beam type or cantilever is formed on the substrate through the gap. A ribbon member supported by a beam-type structure is formed.
As a result, the generation of residues at the time of etching the ribbon member forming layer, which has been a problem in the conventional method of etching the ribbon member forming layer by RIE or the like, is eliminated, and the residue removing step after etching becomes unnecessary. Damage to the ribbon member, which is likely to occur, can be prevented.
Further, since no etching residue is generated, an etching stop phenomenon due to the etching residue and damage to the ribbon member due to stress concentration due to non-uniform etching of the sacrifice layer, which occur in the sacrificial layer removing step of the conventional method, do not occur. Therefore, the production yield of the MEMS device can be improved.
[Brief description of the drawings]
FIGS. 1A to 1D are cross-sectional views of respective steps of patterning a ribbon member forming layer when forming a MEMS device by a method according to an embodiment of the present invention.
FIGS. 2A and 2B are a perspective view showing a configuration of an optical MEMS element having a doubly supported beam structure, and a cross-sectional view taken along line II of FIG. 2A, respectively.
3A and 3B are a perspective view showing a configuration of an optical MEMS element having a cantilever structure and a cross-sectional view taken along line II-II in FIG. 3A, respectively.
4 (a) to 4 (e) are cross-sectional views taken along line II of FIG. 2 for each step when manufacturing the optical MEMS element 10 having a doubly supported structure.
FIG. 5 is a perspective view showing a configuration of a GLV device.
FIG. 6 is a plan view showing a state in which a ribbon member forming layer is patterned and divided into ribbon members.
FIGS. 7A to 7C are cross-sectional views illustrating each step of a conventional MEMS device manufacturing method.
FIG. 8 is a cross-sectional view for explaining a problem of a conventional method of manufacturing a MEMS device.
[Explanation of symbols]
Reference numeral 10: an optical MEMS element having a double-supported beam structure; 12, an insulating substrate; 14, an insulating substrate; 16, a bridge member; Column-shaped portion, 22 void portion, 24 sacrificial layer, 30 optical MEMS element of cantilever structure, 32 insulating substrate, 34 lower electrode, 36 bridge member, 38 upper portion Reflective film also serving as electrode, 39: Ribbon member, 42: SiN film, 44: Al film, 46: Ribbon member forming layer, 50: GLV device, 52: Resist mask, 54: Opening, 56 ... Resist mask, 58 recess, 60 projection.

Claims (4)

  1. A stripe-shaped ribbon member supported on the substrate in a doubly-supported or cantilever-type structure via a gap, and a drive mechanism for driving the ribbon member, wherein the drive mechanism drives the ribbon member. A method for manufacturing a MEMS device comprising a plurality of MEMS elements provided in parallel on a substrate at a predetermined distance apart from each other,
    Forming a sacrificial layer in a predetermined region on the substrate;
    Patterning the upper layer of the sacrificial layer, a patterning step of forming a plurality of stripe-shaped recesses having the same width as the width of the ribbon member at a predetermined distance apart;
    Next, a step of forming a ribbon member forming layer for forming a ribbon member on the substrate including the entire surface of the sacrificial layer;
    A CMP processing step of polishing and removing the ribbon member forming layer and the sacrificial layer on the sacrificial layer between the concave portions by the CMP process and leaving the ribbon member in the concave portions;
    Removing the sacrificial layer to form a ribbon member supported in a doubly supported or cantilevered structure on the substrate via the gap.
  2. The method according to claim 1, wherein, in the patterning step, a second stripe-shaped recess orthogonal to the longitudinal direction is formed in the stripe-shaped recess.
  3. The method for manufacturing a MEMS device according to claim 1, wherein a laminated film of an insulating film and a conductive film is formed as the ribbon member forming layer.
  4. As a ribbon member forming layer, a laminated film including a ribbon member forming layer and a protective layer provided on the ribbon member forming layer is formed, and in the CMP process, an extremely thin protective layer is left on the ribbon member. The method of manufacturing a MEMS device according to any one of claims 1 to 3, wherein the MEMS device is subjected to a CMP process.
JP2002246367A 2002-08-27 2002-08-27 Method of manufacturing mems device Abandoned JP2004082260A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923792B2 (en) 2006-01-11 2011-04-12 austruamicrosystems AG MEMS sensor comprising a deformation-free back electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923792B2 (en) 2006-01-11 2011-04-12 austruamicrosystems AG MEMS sensor comprising a deformation-free back electrode

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