JP2004020688A - Display device and method for manufacturing the same - Google Patents

Display device and method for manufacturing the same Download PDF

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Publication number
JP2004020688A
JP2004020688A JP2002172493A JP2002172493A JP2004020688A JP 2004020688 A JP2004020688 A JP 2004020688A JP 2002172493 A JP2002172493 A JP 2002172493A JP 2002172493 A JP2002172493 A JP 2002172493A JP 2004020688 A JP2004020688 A JP 2004020688A
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Japan
Prior art keywords
reflective layer
formed
display device
electrode
pixel electrode
Prior art date
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Pending
Application number
JP2002172493A
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Japanese (ja)
Inventor
Junichi Fujisawa
Hiromitsu Ishii
Shintaro Kuwayama
桑山 晋太郎
石井 裕満
藤沢 淳一
Original Assignee
Casio Comput Co Ltd
カシオ計算機株式会社
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Priority to JP2002172493A priority Critical patent/JP2004020688A/en
Publication of JP2004020688A publication Critical patent/JP2004020688A/en
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Abstract

An object of the present invention is to provide a reflective liquid crystal display device in which a reflective layer is provided on the inner surface side of a segment substrate, so that the scattering and reflection characteristics are uniform and the contrast is not reduced.
A plurality of reflective layers provided on an upper surface of a segment substrate in an island shape have the same size as a pixel forming region which is a portion where a segment electrode and a common electrode overlap, and correspond to the pixel forming region. Is located in the position. Thereby, reflection of external light by the reflective layer 2 does not occur in the non-pixel formation region between the pixel formation regions of the segment electrode 5, and therefore, the contrast can be prevented from lowering. An insulating film 3 having a through hole 4 with an inclined surface is provided on the upper surface of the segment substrate 1 including the reflective layer 2, and a segment electrode 5 is formed on the upper surface of the insulating film 3 having the through hole 4 with the inclined surface. It is formed in an uneven shape following the surface. In this case, the depth of the sloped through hole 4 becomes the thickness of the insulating film 3 and becomes uniform. Thereby, the scattering reflection characteristics can be made uniform.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a display device and a method for manufacturing the same.
[0002]
[Prior art]
In a conventional reflection-type liquid crystal display device, liquid crystal is sealed between two substrates, and an underlayer whose surface is uneven is provided on the inner surface of the two substrates opposite to the display surface side. In some cases, a reflective layer is provided on the underlayer in an uneven shape following the uneven surface of the underlayer, and a pixel electrode is provided on the reflective layer via an insulating film. In this case, external light incident from the display surface side of the liquid crystal display device passes through the pixel electrode and is scattered and reflected on the uneven surface of the reflective layer, and the scattered reflected light is transmitted through the pixel electrode and displayed on the display surface of the liquid crystal display device. Emitted from the side. As described above, the reason why the scattered reflected light is emitted from the display surface side of the liquid crystal display device is to prevent specular reflection and obtain a paper white color excellent in visibility even without a diffusion plate. is there.
[0003]
In another conventional reflection type liquid crystal display device, a liquid crystal is sealed between two substrates, and an underlayer having an uneven surface is formed on an inner surface of the substrate opposite to the display surface side of the two substrates. There is a type in which a reflective and pixel electrode is provided on the underlayer in an uneven shape following the uneven surface of the underlayer. In this case, external light incident from the display surface side of the liquid crystal display device is scattered and reflected by the uneven surface of the reflective and pixel electrode, and the scattered reflected light is emitted from the display surface side of the liquid crystal display device.
[0004]
[Problems to be solved by the invention]
By the way, in the above-mentioned conventional liquid crystal display device, in order to obtain an underlayer having an uneven surface, the unevenness is formed by photolithography on the surface of the photosensitive resin layer applied to the inner surface of the opposite substrate. Therefore, it is difficult to make the depth of the concave portion on the surface of the underlayer uniform, and thus the unevenness of the reflective layer or the reflective / pixel electrode formed thereon causes a problem that the scattering / reflection characteristics vary. there were.
[0005]
Further, among the above conventional liquid crystal display devices, in a liquid crystal display device having a reflective and pixel electrode, particularly in the case of a simple matrix type, the reflective and pixel electrode as a segment electrode has a stripe shape. There has been a problem that at least a reflection phenomenon occurs in a non-pixel formation region between a pixel formation region which is a portion where the reflection and pixel electrode overlaps with the common electrode, and the contrast is reduced.
[0006]
Therefore, an object of the present invention is to provide a display device capable of making the scattering and reflection characteristics uniform and preventing the contrast from being lowered, and a method of manufacturing the same.
[0007]
[Means for Solving the Problems]
The display device according to the first aspect of the present invention provides an island-like reflection layer on an inner surface of a substrate opposite to a display surface side of two substrates arranged opposite to each other, and corresponds to the reflection layer. An insulating film having a through hole with an inclined surface and a pixel electrode made of a transparent conductive material are provided in this order, and the pixel electrode follows the uneven surface of the insulating film including the through hole with the inclined surface. It is characterized by being formed in an uneven shape.
According to a second aspect of the present invention, in the display device according to the first aspect, the pixel electrodes are arranged in a stripe shape, and the reflection layer is arranged at a position overlapping with a pixel formation region of the pixel electrode. It is characterized by having.
A display device according to a third aspect of the present invention is the display device according to the second aspect, wherein the reflective layer is formed to have a smaller area than a pixel forming region of the pixel electrode. .
A display device according to a fourth aspect of the present invention is the display device according to the first aspect, wherein the pixel electrodes are arranged in a matrix.
A display device according to a fifth aspect of the present invention is the display device according to the fourth aspect, wherein the reflective layer is formed to have a smaller area than the pixel electrode.
A display device according to a sixth aspect of the present invention is the display device according to the third or fifth aspect, wherein the reflective layer is formed of a light-transmissive material in a solid shape.
A display device according to a seventh aspect of the present invention is the display device according to the third or fifth aspect, wherein the reflective layer is formed in a pattern or a discrete shape from an opaque material. It is.
A display device according to an eighth aspect of the present invention is the display device according to the fourth aspect, wherein a switching element is connected to the pixel electrode, and the reflection layer is on the same plane as one of the electrodes constituting the switching element. Are formed of the same material as the electrodes.
According to a ninth aspect of the present invention, in the method for manufacturing a display device, the reflection layer is formed in an island shape on the inner surface of the two substrates arranged opposite to each other, which is opposite to the display surface side. A step of forming an insulating film on the inner surface of the opposite substrate including the reflective layer so as to have a through hole with an inclined surface at a portion corresponding to the reflective layer, and at least a portion overlapping the reflective layer. Forming a pixel electrode made of a transparent conductive material on the insulating film including the through hole with the inclined surface so as to follow the uneven surface of the insulating film including the through hole with the inclined surface, so as to form an uneven shape. It is characterized by the following.
According to a tenth aspect of the present invention, in the method for manufacturing a display device according to the ninth aspect, the pixel electrode is formed in a stripe shape, and the reflective layer is overlapped with a pixel forming region of the pixel electrode. It is formed at a position where
A method for manufacturing a display device according to an eleventh aspect of the present invention is the method according to the tenth aspect, wherein the reflective layer is formed to have a smaller area than a pixel formation region of the pixel electrode. is there.
According to a twelfth aspect of the invention, there is provided a method of manufacturing a display device according to the ninth aspect, wherein the pixel electrodes are formed in a matrix.
A method for manufacturing a display device according to a thirteenth aspect of the present invention is the method according to the twelfth aspect, wherein the reflective layer is formed to have a smaller area than the pixel electrode.
According to a fourteenth aspect of the invention, there is provided a method of manufacturing a display device according to the eleventh or thirteenth aspect, wherein the reflective layer is formed of a solid material using a light-impermeable material. .
According to a fifteenth aspect of the present invention, in the method for manufacturing a display device according to the eleventh or thirteenth aspect, the reflective layer is formed in a pattern or a discrete shape using a light-impermeable material. Things.
According to a sixteenth aspect of the present invention, in the method of manufacturing a display device according to the twelfth aspect, the reflective layer is formed at the same time as forming any of the electrodes constituting the switching element connected to the pixel electrode. It is characterized by being formed of the same material as the electrode.
According to a seventeenth aspect of the present invention, in the method of manufacturing a display device according to the sixteenth aspect, the surface of the electrode formed simultaneously with the reflective layer is anodized.
According to a method of manufacturing a display device according to an eighteenth aspect of the present invention, in the invention according to the sixteenth aspect, the step of forming the electrode and the reflection layer includes a step of forming a metal film and a step of forming the metal film by photolithography. Forming a wiring including electrodes and a reflective layer by patterning by a lithography method.
According to the present invention, since the insulating film is formed on the inner surface of the opposite substrate including the reflective layer so as to have a through hole with an inclined surface at a portion corresponding to the reflective layer, the insulating film on the reflective layer is formed. The depth of the inclined through hole formed in the insulating film becomes the thickness of the insulating film, and therefore, the depth of the inclined through hole formed in the insulating film can be made uniform, and the scattering and reflection characteristics can be made uniform. can do. In addition, since the reflective layer is formed in an island shape and the pixel electrode is formed thereon, even if the pixel electrode is in a stripe shape, the reflective layer is arranged at a position overlapping with the pixel forming region of the stripe-shaped pixel electrode. Then, reflection of external light by the reflection layer in the non-pixel formation region between the pixel formation regions of the stripe-shaped pixel electrode does not occur, and therefore, the contrast can be prevented from lowering.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
(1st Embodiment)
FIG. 1 is a cross-sectional view of a main part of a simple matrix type reflection type liquid crystal display device as a first embodiment of the present invention, and FIG. 2 is a transmission plan view of a segment electrode, a common electrode and a reflection layer. It is something. This liquid crystal display device includes a segment substrate 1 made of a glass substrate or the like and a common substrate 11.
[0009]
As shown by oblique lines (hatching) in FIG. 2, a predetermined portion of the upper surface of the segment substrate 1 (the inner surface on the side facing the common substrate 11) is formed of a high metal such as aluminum or an aluminum alloy or silver. Many reflective layers 2 made of a reflective material are provided in an island shape. In this case, the reflective layer 2 has the same size as the pixel forming region 5a which is a portion where the segment electrode 5 and the common electrode 15 described later overlap each other, and is arranged at a position corresponding to the pixel forming region 5a.
[0010]
An insulating film 3 made of silicon nitride, silicon oxide, a transparent photosensitive resin, or the like is provided on the upper surface of the segment substrate 1 including the reflective layer 2. In this case, a portion of the insulating film 3 corresponding to each reflective layer 2 is provided with a plurality of through holes 4 with inclined surfaces that gradually become narrower from the upper side to the lower side. Therefore, on the reflective layer 2, the surface of the insulating film 3 including the through hole 4 with an inclined surface is uneven.
[0011]
A plurality of segment electrodes (pixel electrodes) 5 made of a transparent conductive material such as ITO or IZO are provided at predetermined positions on the upper surface of the insulating film 3 including the through holes 4 with inclined surfaces so as to extend in the column direction in FIG. ing. In this case, each of the segment electrodes 5 is disposed on a corresponding one of the plurality of reflective layers 2, and is formed in an uneven shape following the uneven surface of the insulating film 3 including the through hole 4 with an inclined surface. An alignment film 6 is provided on the upper surface of the insulating film 3 including the segment electrodes 5.
[0012]
On the other hand, a black mask 12 made of resin and red, green, and blue color filters 13 are provided on the lower surface of the common substrate 11 (the inner surface on the side facing the segment substrate 1). On the lower surfaces of the black mask 12 and the color filter 13, a flattening film 14 made of polyimide or the like is provided. A plurality of common electrodes 15 made of a transparent conductive material such as ITO or IZO are provided at predetermined locations on the lower surface of the planarizing film 14 so as to extend in the row direction in FIG. On the lower surface of the planarizing film 14 including the common electrode 15, an alignment film 16 is provided.
[0013]
The segment substrate 1 and the common substrate 11 are bonded to each other via a sealing material (not shown). Liquid crystal 17 is sealed between the alignment films 6 and 16 of the substrates 1 and 11 inside the sealing material. A phase difference plate 18 is attached to the upper surface of the common substrate 11, and a polarizing plate 19 is attached to the upper surface.
[0014]
In the reflection type liquid crystal display device, external light incident from the upper surface side (display surface side) of the polarizing plate 19 on the common substrate 11 receives the polarizing plate 19, the phase difference plate 18, the common substrate 11, and the color filter 13. The light passes through the planarizing film 14, the common electrode 15, the alignment film 16, the liquid crystal 17, the alignment film 6, the segment electrode 5, and the insulating film 3 and is reflected by the reflection layer 2, and the reflected light passes through the optical path opposite to the above. After that, the light is emitted to the upper surface side of the polarizing plate 19 on the common substrate 11, thereby performing display.
[0015]
In this case, since the reflective layer 2 provided on the upper surface of the segment substrate 1 is flat, it literally has only a light reflecting function. However, since the segment electrode 5 is formed in an uneven shape following the uneven surface of the insulating film 3 including the through hole 4 with the inclined surface, the light scattering function is exhibited in this portion. Therefore, external light can be scattered and reflected as a whole.
[0016]
In addition, as shown by hatching in FIG. 2, the reflective layer 2 is disposed at a position corresponding to the pixel forming region 5 a which is a portion where the segment electrode 5 and the common electrode 15 overlap, so that the segment electrode 5 External light is not reflected by the reflective layer 2 in the non-pixel formation region 5b between the pixel formation regions 5a, so that the contrast can be prevented from lowering.
[0017]
Next, an example of a method for manufacturing the segment substrate 1 side of the liquid crystal display device shown in FIG. 1 will be described. First, as shown in FIG. 3A, a reflective layer 2 is formed on the upper surface of the segment substrate 1 by patterning an aluminum-based metal film or the like formed by a sputtering method by a photolithography method. Next, an insulating film 3 is formed on the upper surface of the segment substrate 1 including the reflective layer 2 by a CVD method or the like. Next, a predetermined resist pattern 21 is formed on the upper surface of the insulating film 3.
[0018]
Next, as shown in FIG. 3B, when the insulating film 3 is wet-etched using the resist pattern 21 as a mask, the etching proceeds isotropically, so that the insulating film 4 on the reflective layer 2 has an inclined surface. Through holes 4 are formed. In this case, the depth of the through hole 4 with the inclined surface formed in the insulating film 4 on the reflective layer 2 becomes the thickness of the insulating film 3, and thus the depth of the through hole 4 with the inclined surface formed in the insulating film 3. Can be made uniform, and the scattering reflection characteristics can be made uniform. Thereafter, the resist pattern 21 is peeled off.
[0019]
Next, as shown in FIG. 1, the segment electrode 5 is formed by patterning an ITO film or the like formed by a sputtering method on the upper surface of the insulating film 3 including the inside of the through hole 4 with an inclined surface by a photolithography method. Form. In this case, the segment electrode 5 is formed along the uneven surface of the insulating film 3 including the through hole 4 with an inclined surface, and the surface follows the uneven surface of the insulating film 3 including the through hole 4 with an inclined surface. It is a rough surface of almost the same size. Next, an alignment film 6 is formed on the upper surface of the insulating film 3 including the segment electrodes 5. Thus, the segment substrate 1 shown in FIG. 1 is obtained.
[0020]
(2nd Embodiment)
FIG. 4 is a cross-sectional view of a main part of an active matrix reflective liquid crystal display device according to a second embodiment of the present invention, and FIG. 5 is a transmission plan view of a thin film transistor substrate side thereof. In this case, FIG. 4 is a cross-sectional view corresponding to a portion along line XX in FIG. This liquid crystal display device includes a thin film transistor substrate 31 made of a glass substrate or the like and a counter substrate 61.
[0021]
A plurality of pixel electrodes 32 arranged in a matrix, a plurality of thin film transistors 33 respectively connected to the pixel electrodes 32, and a row are provided on the upper surface (the inner surface facing the opposite substrate 61) of the thin film transistor substrate 31. A plurality of scanning lines 34 arranged in the pixel direction to supply a scanning signal to the thin film transistor 33; a plurality of data lines 35 arranged in the column direction to supply a data signal to the thin film transistor 33; A plurality of auxiliary capacitance lines 36 forming an auxiliary capacitance portion at a portion overlapping with the pixel electrode 32, and a plurality of reflective layers 37 which are slightly smaller than the pixel electrode 32 and are disposed at positions entirely overlapping the pixel electrodes 32. Is provided.
[0022]
That is, the scanning line 34 including the gate electrode 38 made of a highly reflective material such as aluminum-based metal or silver, the auxiliary capacitance line 36, and the reflection layer 37 are provided at predetermined positions on the upper surface of the thin film transistor substrate 31. . In this case, anodic oxide films 39 and 40 are provided on the surface of the scanning line 34 including the gate electrode 38 and the surface of the auxiliary capacitance line 36, respectively, but the anodic oxide film is provided on the surface of the reflective layer 37. Absent.
[0023]
A gate insulating film 41 made of silicon nitride, silicon oxide, a transparent photosensitive resin, or the like is provided on the upper surface of the thin film transistor substrate 31 including the gate electrode 38 and the like. In this case, a portion of the gate insulating film 41 corresponding to each reflection layer 37 is provided with a plurality of through-holes 42 with inclined surfaces that gradually become narrower from the upper side to the lower side. Therefore, on the reflective layer 37, the surface of the gate insulating film 41 including the through hole 42 with an inclined surface is uneven.
[0024]
A semiconductor thin film 43 made of intrinsic amorphous silicon is provided at a predetermined position on the upper surface of the gate insulating film 41 on the gate electrode 38. At a predetermined position on the upper surface of the semiconductor thin film 43, a channel protective film 44 made of silicon nitride is provided. Ohmic contact layers 45 and 46 made of n-type amorphous silicon are provided on both sides of the upper surface of the channel protective film 44 and on the upper surface of the semiconductor thin film 43 on both sides thereof.
[0025]
On the upper surface of one ohmic contact layer 45, a source electrode 47 made of an aluminum-based metal is provided. A data line 35 including a drain electrode 48 made of an aluminum-based metal is provided at predetermined locations on the upper surface of the other ohmic contact layer 46 and the upper surface of the gate insulating film 41.
[0026]
The thin film transistor 33 is composed of the gate electrode 38, the anodic oxide film 39, the gate insulating film 41, the semiconductor thin film 43, the channel protective film 44, the ohmic contact layers 45 and 46, the source electrode 47 and the drain electrode 48.
[0027]
An overcoat film 49 made of silicon nitride is provided on the upper surface of the gate insulating film 41 including the thin film transistor 33. In this case, the overcoat film 49 on the reflective layer 37 is formed in an uneven shape following the uneven surface of the gate insulating film 41 including the through hole 42 with an inclined surface. A contact hole 50 is provided in a portion of the overcoat film 49 corresponding to a predetermined portion of the source electrode 47.
[0028]
At a predetermined position on the upper surface of the overcoat film 49, a pixel electrode 32 made of a transparent conductive material such as ITO or IZO is provided so as to be connected to the source electrode 47 via the contact hole 50. In this case, the pixel electrode 32 is disposed so as to cover the entire reflective layer 37, and on the reflective layer 37, the uneven surface of the overcoat film 49, that is, the uneven surface of the gate insulating film 41 including the inclined through-hole 42. It is formed in an uneven shape to follow. An alignment film 51 is provided on the upper surface of the overcoat film 49 including the pixel electrode 32.
[0029]
On the other hand, a black mask 62 made of an opaque material such as chromium and red, green and blue color filters 63 made of a resin are provided on the lower surface of the opposing substrate 61 (the inner surface facing the thin film transistor substrate 31). I have. On the lower surfaces of the black mask 62 and the color filter 63, a flattening film 64 made of polyimide or the like is provided. A counter electrode 65 made of a transparent conductive material such as ITO or IZO is provided on the lower surface of the flattening film 64. An alignment film 66 is provided on the lower surface of the counter electrode 65.
[0030]
The thin film transistor substrate 31 and the counter substrate 61 are bonded to each other via a sealing material (not shown). A liquid crystal 67 is sealed between the alignment films 51 and 66 of the two substrates 31 and 61 inside the sealing material. A phase difference plate 68 is attached to the upper surface of the counter substrate 61, and a polarizing plate 69 is attached to the upper surface. In FIG. 5, a region surrounded by a dashed line slightly smaller than the reflection layer 37 is an opening 62 a of the black mask 62.
[0031]
In this reflection type liquid crystal display device, external light incident from the upper surface side (display surface side) of the polarizing plate 69 on the counter substrate 61 receives the polarizing plate 69, the phase difference plate 68, the counter substrate 61, and the color filter 63. The light passes through the planarizing film 64, the counter electrode 65, the alignment film 66, the liquid crystal 67, the alignment film 51, the pixel electrode 32, the overcoat film 49, and the gate insulating film 41, and is reflected by the reflection layer 37. The light is emitted to the upper surface side of the polarizing plate 69 on the opposing substrate 61 through an optical path opposite to the above, thereby performing display.
[0032]
In this case, since the reflection layer 37 provided on the upper surface of the thin film transistor substrate 31 is flat, it has only a light reflection function literally. However, since the pixel electrode 32 is formed in an uneven shape following the uneven surface of the overcoat film 49, that is, the uneven surface of the gate insulating film 41 including the through hole 42 with an inclined surface, the light scattering function is exhibited in this portion. Is done. Therefore, external light can be scattered and reflected as a whole.
[0033]
Next, an example of a method of manufacturing a portion of the reflective layer 37 and the pixel electrode 32 on the thin film transistor substrate 31 side of the liquid crystal display device shown in FIG. 4 will be described. First, as shown in FIG. 6A, a reflective layer 37 and a gate electrode 38 are formed by patterning an aluminum-based metal film or the like formed by a sputtering method on the upper surface of a thin film transistor substrate 31 by a photolithography method. A scanning line 34 and an auxiliary capacitance line 36 are formed. As described above, since the reflective layer 37 is formed of the same material as that of the gate electrode 38 and the like, that is, a highly reflective aluminum-based metal film and the like at the same time as the formation of the gate electrode 38 and the like, the process does not increase.
[0034]
Next, by performing an anodic oxidation process, anodic oxide films 39 and 40 are formed on the surface of the scanning line 34 including the gate electrode 38 and the surface of the auxiliary capacitance line 36, respectively. In this case, since the reflection layer 37 has an island shape, no anodic oxidation current is supplied to the reflection layer 37, and thus no anodic oxide film is formed on the surface of the reflection layer 37. In this manner, if patterning is performed before the anodizing process, the anodizing process can be performed without forming a resist on the reflection layer 37 which is a non-anodized portion, and the process does not increase.
[0035]
Next, a gate insulating film 41 is formed on the upper surface of the thin film transistor substrate 31 including the reflection layer 37 and the like by a CVD method or the like. Next, a resist pattern 71 is formed at a predetermined location on the upper surface of the gate insulating film 41. Next, as shown in FIG. 6B, when the gate insulating film 41 is wet-etched using the resist pattern 71 as a mask, the etching proceeds isotropically, so that the gate insulating film 41 on the reflective layer 37 is inclined. A through hole 42 with a surface is formed.
[0036]
In this case, the depth of the inclined through hole 42 formed in the gate insulating film 41 on the reflective layer 37 is equal to the thickness of the gate insulating film 41, and thus the inclined through hole 42 formed in the gate insulating film 41 is formed. Can be made uniform, and the scattering and reflection characteristics can be made uniform. Thereafter, the resist pattern 71 is stripped.
[0037]
Next, as shown in FIG. 4, an overcoat film 49 is formed on the upper surface of the gate insulating film 41 including the inside of the through hole 42 with an inclined surface by a CVD method. In this case, the overcoat film 49 is formed along the uneven surface of the gate insulating film 41 including the through hole 42 with an inclined surface, and the surface thereof is formed on the uneven surface of the gate insulating film 41 including the through hole 42 with an inclined surface. And an uneven surface having substantially the same size as that following the above.
[0038]
Next, a pixel electrode 32 is formed by patterning an ITO film or the like formed by a sputtering method at a predetermined position on the upper surface of the overcoat film 49 by a photolithography method. In this case, the pixel electrode 32 is formed along the uneven surface of the overcoat film 49, and the surface has an uneven surface substantially the same size as that of the overcoat film 49 following the uneven surface. Next, an alignment film 51 is formed on the upper surface of the overcoat film 49 including the pixel electrode 32. Thus, the thin film transistor substrate 31 side shown in FIG. 4 is obtained.
[0039]
(Third embodiment)
FIG. 7 is a sectional view similar to FIG. 1 of a simple matrix type transflective liquid crystal display device according to a third embodiment of the present invention, and FIG. 8 is a transmission plane of a segment electrode, a common electrode and a reflective layer. FIG. This liquid crystal display device differs from the liquid crystal display device shown in FIGS. 1 and 2 in that the reflective layer 2 is provided at a position where the reflective layer 2 overlaps the substantially central portion of the pixel forming region 5 a of the segment electrode 5. In this case, a phase difference plate 22 is attached to the lower surface of the segment substrate 1, and a polarizing plate 23 is attached to the lower surface.
[0040]
As described above, in this liquid crystal display device, the reflection layer 2 made of an opaque material such as an aluminum-based metal having an area smaller than that of the pixel formation region 5a is provided substantially below the center of the pixel formation region 5a of the segment electrode 5. ing. For this reason, in one pixel formation region 5a, the reflection layer 2 overlapping the substantially central portion of the pixel formation region 5a literally forms a reflection portion, and the portion where the pixel formation region 5a and the reflection layer 2 do not overlap defines the transmission portion. Make up. The area of the opaque reflective layer 2 is about 35% to 65% of the area of the transmissive portion, and is large when importance is placed on use in a bright place, and small when importance is placed on use in a dark place. For example, it can be set arbitrarily according to the use environment.
[0041]
When the liquid crystal display device is used as a transmission type, when a backlight (not shown) arranged on the lower surface side of the polarizing plate 23 below the segment substrate 1 is turned on, light from the backlight is polarized. The insulating film 3 and the segment electrode 5 around the plate 23, the phase difference plate 22, the segment substrate 1, and the reflective layer 37, that is, the transmission portion, the alignment film 6, the liquid crystal 17, the alignment film 16, the common electrode 15, the flattening film 14, The light passes through the color filter 13, the common substrate 11, the phase difference plate 18, and the polarizing plate 19 and is emitted to the upper surface side of the polarizing plate 19, thereby performing display.
[0042]
On the other hand, when the liquid crystal display device is used as a reflection type, the backlight is not turned on, and external light incident from the upper surface side of the polarizing plate 19 on the common substrate 1 is used as the polarizing plate 19, the phase difference plate 18, and the like. The light passes through the common substrate 11, the color filter 13, the flattening film 14, the common electrode 15, the alignment film 16, the liquid crystal 17, the alignment film 6, the segment electrode 5, and the insulating film 3 and is reflected (scattered and reflected) by the reflection layer 2; The reflected light (scattered reflected light) is emitted to the upper surface side of the polarizing plate 19 on the common substrate 11 through an optical path opposite to that described above, thereby performing display.
[0043]
(Fourth embodiment)
FIG. 9 is a sectional view similar to FIG. 7 of a simple matrix type transflective liquid crystal display device according to a fourth embodiment of the present invention, and FIG. 10 is a transmission plane of a segment electrode, a common electrode and a reflective layer. FIG. This liquid crystal display device is different from the liquid crystal display device shown in FIGS. 7 and 8 in that the reflective layer 2 is provided at a position where the reflective layer 2 overlaps the peripheral portion of the pixel forming region 5 a of the segment electrode 5.
[0044]
As described above, in this liquid crystal display device, the reflection layer 2 made of an opaque material such as an aluminum-based metal having an area smaller than that of the pixel formation region 5a is provided below the periphery of the pixel formation region 5a of the segment electrode 5. I have. Therefore, in one pixel formation region 5a, the reflection layer 2 overlapping with the peripheral portion of the pixel formation region 5a literally forms a reflection portion, and a portion where the pixel formation region 5a and the reflection layer 2 do not overlap forms a transmission portion. are doing.
[0045]
(Fifth embodiment)
FIG. 11 is a sectional view similar to FIG. 4 of an active matrix type transflective liquid crystal display device according to a fifth embodiment of the present invention, and FIG. 12 is a transmission plan view of a pixel electrode and a reflective layer. It is something. This liquid crystal display device differs from the liquid crystal display device shown in FIGS. 4 and 5 in that the reflective layer 37 is provided at a position overlapping the substantially central portion of the pixel electrode 32. In this case, a phase difference plate 72 is attached to the lower surface of the thin film transistor substrate 31, and a polarizing plate 73 is attached to the lower surface.
[0046]
As described above, in the liquid crystal display device, the reflection layer 37 made of an opaque material such as an aluminum-based metal having a smaller area than the pixel electrode 32 is provided substantially below the center of the pixel electrode 32. For this reason, in one pixel electrode 32, the reflective layer 37 overlapping the substantially central portion of the pixel electrode 32 literally constitutes a reflective portion, and the portion where the pixel electrode 32 and the reflective layer 37 do not overlap constitutes a transmissive portion. I have.
[0047]
(Sixth embodiment)
FIG. 13 is a sectional view similar to FIG. 11 of an active matrix type transflective liquid crystal display device according to a sixth embodiment of the present invention, and FIG. 14 is a transmission plan view of a pixel electrode and a reflective layer. It is something. This liquid crystal display device is different from the case shown in FIGS. 11 and 12 in that the reflective layer 37 is provided at a position overlapping with the peripheral portion of the pixel electrode 32.
[0048]
As described above, in this liquid crystal display device, the reflective layer 37 made of a light-transmissive material such as an aluminum-based metal having a smaller area than the pixel electrode 32 is provided below the peripheral portion of the pixel electrode 32. Therefore, in one pixel electrode 32, the reflective layer 37 overlapping with the peripheral portion of the pixel electrode 32 literally constitutes a reflective portion, and the portion where the pixel electrode 32 and the reflective layer 37 do not overlap constitutes a transmissive portion. .
[0049]
(Other embodiments)
7 and 9, in the region where the segment electrode 5 does not face the reflective layer 2, a recess with a slope is formed at the same time as the formation of the through hole 4 with a slope in the insulating film 3, so that the through hole 4 with a slope and The segment electrode 5 may be formed on the upper surface of the insulating film 3 including the concave portion with the inclined surface so as to follow the irregular surface of the insulating film 3 including the through hole 4 with the inclined surface and the concave portion with the inclined surface.
[0050]
In FIGS. 11 and 13, in the gate insulating film 41 in a region where the pixel electrode 32 does not face the reflective layer 37, a concave portion with an inclined surface is formed at the same time as the formation of the through hole 42 with an inclined surface. The pixel electrode 32 is formed on the upper surface of the overcoat film 49 on the gate insulating film 41 including the concave portion with the inclined surface so as to follow the uneven surface of the through hole 42 with the inclined surface and the gate insulating film 41 including the concave portion with the inclined surface. May be formed.
[0051]
In addition, for example, as shown in FIGS. 8 and 10, the case has been described in which the opaque reflecting layer 2 is formed in a solid shape over the entire area. However, the present invention is not limited to this. For example, in FIG. As shown, a plurality of dot-like reflective layers 2a made of an opaque material may be arranged and provided. The point-like reflective layer 2a may be a pattern connected partially (in this case, the whole may be one, or may be separated into a plurality of pieces), or may be a discrete shape separated from each other. The pattern or discrete arrangement may be regular or irregular. In short, the ratio of the total area of the light-impermeable reflective layer 2a to the area of the pixel formation region 5a of the segment electrode 5 may be set to an appropriate value of about 35% to 65% depending on the use environment.
[0052]
【The invention's effect】
As described above, according to the present invention, since the insulating film is formed on the inner surface of the opposite substrate including the reflective layer so as to have the through hole with the inclined surface in the portion corresponding to the reflective layer, the reflective layer The depth of the inclined through hole formed in the upper insulating film is equal to the thickness of the insulating film, and therefore, the depth of the inclined through hole formed in the insulating film can be made uniform, and as a result, the scattering reflection can be achieved. The characteristics can be made uniform. In addition, since the reflection layer is formed in an island shape and the pixel electrode is formed thereon, even if the pixel electrode is in a stripe shape, the reflection layer is arranged at a position overlapping with the pixel formation region of the stripe-shaped pixel electrode. Then, reflection of external light by the reflection layer in the non-pixel formation region between the pixel formation regions of the stripe-shaped pixel electrode does not occur, and therefore, the contrast can be prevented from lowering.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a main part of a simple matrix type reflection type liquid crystal display device as a first embodiment of the present invention.
FIG. 2 is a transmission plan view of a segment electrode, a common electrode, and a reflective layer of the liquid crystal display device shown in FIG.
FIGS. 3A and 3B are cross-sectional views for explaining an example of a method for manufacturing the thin film transistor substrate side of the liquid crystal display device shown in FIG.
FIG. 4 is a cross-sectional view of a main part of an active matrix reflective liquid crystal display device according to a second embodiment of the present invention.
FIG. 5 is a transmission plan view of the thin film transistor substrate side of the liquid crystal display device shown in FIG.
FIGS. 6A and 6B are cross-sectional views illustrating an example of a method for manufacturing a reflective layer and a pixel electrode on the thin film transistor substrate side of the liquid crystal display device illustrated in FIG.
FIG. 7 is a sectional view similar to FIG. 1 of a simple matrix type transflective liquid crystal display device as a third embodiment of the present invention.
8 is a transmission plan view of a segment electrode, a common electrode, and a reflective layer of the liquid crystal display device shown in FIG.
FIG. 9 is a sectional view similar to FIG. 7 of a simple matrix type transflective liquid crystal display device according to a fourth embodiment of the present invention.
10 is a transmission plan view of a segment electrode, a common electrode, and a reflective layer of the liquid crystal display device shown in FIG.
FIG. 11 is a sectional view similar to FIG. 4 of an active matrix type transflective liquid crystal display device according to a fifth embodiment of the present invention.
12 is a transmission plan view of a pixel electrode and a reflection layer of the liquid crystal display device shown in FIG.
FIG. 13 is a sectional view similar to FIG. 11, illustrating an active matrix type transflective liquid crystal display device according to a sixth embodiment of the present invention.
14 is a transmission plan view of a pixel electrode and a reflective layer of the liquid crystal display device shown in FIG.
FIG. 15 is a view for explaining another example of the reflection layer.
[Explanation of symbols]
1 segment board
2 Reflective layer
3 insulating film
4 Through hole with slope
5 segment electrode
11 Common board
15 Common electrode
17 LCD
31 Thin film transistor substrate
32 pixel electrodes
33 thin film transistor
37 Reflective layer
41 Gate insulating film
42 Through hole with slope
61 Counter substrate
65 Counter electrode
67 LCD

Claims (18)

  1. An insulating film having an island-shaped reflective layer on the inner surface of the substrate opposite to the display surface side of the two substrates disposed opposite to each other, a through hole with an inclined surface in a portion corresponding to the reflective layer, and A pixel electrode made of a transparent conductive material is provided in this order, and the pixel electrode is formed in an uneven shape following the uneven surface of the insulating film including the through hole with the inclined surface. apparatus.
  2. 2. The display device according to claim 1, wherein the pixel electrodes are arranged in a stripe shape, and the reflection layer is arranged at a position overlapping with a pixel formation region of the pixel electrode.
  3. 3. The display device according to claim 2, wherein the reflective layer has a smaller area than a pixel forming region of the pixel electrode.
  4. 2. The display device according to claim 1, wherein the pixel electrodes are arranged in a matrix.
  5. 5. The display device according to claim 4, wherein the reflective layer is formed to have a smaller area than the pixel electrode.
  6. 6. The display device according to claim 3, wherein the reflection layer is formed of a solid material using a light-impermeable material.
  7. 6. The display device according to claim 3, wherein the reflection layer is formed in a pattern or a discrete shape from an opaque material.
  8. In the invention according to claim 4, a switching element is connected to the pixel electrode, and the reflective layer is provided on the same plane as any one of the electrodes constituting the switching element and formed of the same material as the electrode. A display device, comprising:
  9. Forming a reflective layer in the shape of an island on the inner surface of the substrate opposite to the display surface side of the two substrates disposed opposite to each other; and forming the island on the inner surface of the opposite substrate including the reflective layer. Forming an insulating film having a through hole with an inclined surface in a portion corresponding to the reflective layer; and forming a transparent conductive film on the insulating film including the through hole with the inclined surface in at least a portion overlapping with the reflective layer. Forming a pixel electrode made of a material in an uneven shape by following the uneven surface of the insulating film including the through hole with the inclined surface.
  10. 10. The method according to claim 9, wherein the pixel electrode is formed in a stripe shape, and the reflective layer is formed at a position overlapping with a pixel forming region of the pixel electrode.
  11. 11. The method according to claim 10, wherein the reflective layer is formed to have a smaller area than a pixel forming region of the pixel electrode.
  12. The method according to claim 9, wherein the pixel electrodes are formed in a matrix.
  13. 13. The method according to claim 12, wherein the reflective layer is formed in a smaller area than the pixel electrode.
  14. 14. The method of manufacturing a display device according to claim 11, wherein the reflective layer is formed of a solid material using an opaque material.
  15. 14. The method according to claim 11, wherein the reflection layer is formed in a pattern or a discrete shape using a light-impermeable material.
  16. 13. The display device according to claim 12, wherein the reflective layer is formed of the same material as the electrode at the same time when any of the electrodes constituting the switching element connected to the pixel electrode is formed. Manufacturing method.
  17. 17. The method according to claim 16, wherein the surface of the electrode formed simultaneously with the reflective layer is anodized.
  18. 17. The invention according to claim 16, wherein, in the step of forming the electrode and the reflective layer, a metal film is formed, and the metal film is patterned by a photolithography method to form a wiring including an electrode and a reflective layer Forming a display device.
JP2002172493A 2002-06-13 2002-06-13 Display device and method for manufacturing the same Pending JP2004020688A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006009034A1 (en) * 2004-07-20 2006-01-26 Sharp Kabushiki Kaisha Liquid crystal display device
JP2006201357A (en) * 2005-01-19 2006-08-03 Sharp Corp Liquid crystal display
JP2008268392A (en) * 2007-04-18 2008-11-06 Mitsubishi Electric Corp Liquid crystal display and its manufacturing method
US7505098B2 (en) 2004-09-21 2009-03-17 Casio Computer Co., Ltd. Display panel having a reflective layer and manufacturing method thereof
JP2010145927A (en) * 2008-12-22 2010-07-01 Casio Computer Co Ltd Liquid crystal display device
JP2011059725A (en) * 2010-12-22 2011-03-24 Sharp Corp Liquid crystal display device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006009034A1 (en) * 2004-07-20 2006-01-26 Sharp Kabushiki Kaisha Liquid crystal display device
KR100799433B1 (en) 2004-07-20 2008-01-30 샤프 가부시키가이샤 Liquid crystal display device
US7532280B2 (en) 2004-07-20 2009-05-12 Sharp Kabushiki Kaisha Liquid crystal display device
US7719640B2 (en) 2004-07-20 2010-05-18 Sharp Kabushiki Kaisha Liquid crystal display device
US7839473B2 (en) 2004-07-20 2010-11-23 Sharp Kabushiki Kaisha Liquid crystal display device
US7505098B2 (en) 2004-09-21 2009-03-17 Casio Computer Co., Ltd. Display panel having a reflective layer and manufacturing method thereof
JP2006201357A (en) * 2005-01-19 2006-08-03 Sharp Corp Liquid crystal display
JP2008268392A (en) * 2007-04-18 2008-11-06 Mitsubishi Electric Corp Liquid crystal display and its manufacturing method
JP2010145927A (en) * 2008-12-22 2010-07-01 Casio Computer Co Ltd Liquid crystal display device
JP2011059725A (en) * 2010-12-22 2011-03-24 Sharp Corp Liquid crystal display device

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