JP2003521807A5 - - Google Patents

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Publication number
JP2003521807A5
JP2003521807A5 JP2000559582A JP2000559582A JP2003521807A5 JP 2003521807 A5 JP2003521807 A5 JP 2003521807A5 JP 2000559582 A JP2000559582 A JP 2000559582A JP 2000559582 A JP2000559582 A JP 2000559582A JP 2003521807 A5 JP2003521807 A5 JP 2003521807A5
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JP
Japan
Prior art keywords
end point
signal
chamber
predetermined value
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000559582A
Other languages
English (en)
Japanese (ja)
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JP2003521807A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US1999/015648 external-priority patent/WO2000003421A2/en
Publication of JP2003521807A publication Critical patent/JP2003521807A/ja
Publication of JP2003521807A5 publication Critical patent/JP2003521807A5/ja
Pending legal-status Critical Current

Links

JP2000559582A 1998-07-10 1999-07-09 基板製作工程に関する改良された終点検出 Pending JP2003521807A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9242698P 1998-07-10 1998-07-10
US60/092,426 1998-07-10
US35005299A 1999-07-08 1999-07-08
US09/350052 1999-07-09
PCT/US1999/015648 WO2000003421A2 (en) 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication processes

Publications (2)

Publication Number Publication Date
JP2003521807A JP2003521807A (ja) 2003-07-15
JP2003521807A5 true JP2003521807A5 (https=) 2006-08-31

Family

ID=26785660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000559582A Pending JP2003521807A (ja) 1998-07-10 1999-07-09 基板製作工程に関する改良された終点検出

Country Status (3)

Country Link
JP (1) JP2003521807A (https=)
KR (1) KR100695582B1 (https=)
WO (1) WO2000003421A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6946394B2 (en) 2000-09-20 2005-09-20 Kla-Tencor Technologies Methods and systems for determining a characteristic of a layer formed on a specimen by a deposition process
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
TW529085B (en) * 2000-09-22 2003-04-21 Alps Electric Co Ltd Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system
WO2003092044A2 (en) * 2002-04-23 2003-11-06 Tokyo Electron Limited Method and apparatus for simplified system configuration
US6825050B2 (en) 2002-06-07 2004-11-30 Lam Research Corporation Integrated stepwise statistical process control in a plasma processing system
JP3959318B2 (ja) 2002-08-22 2007-08-15 東京エレクトロン株式会社 プラズマリーク監視方法，プラズマ処理装置，プラズマ処理方法，およびコンピュータプログラム
US20060275931A1 (en) * 2005-05-20 2006-12-07 Asm Japan K.K. Technology of detecting abnormal operation of plasma process
US7638441B2 (en) 2007-09-11 2009-12-29 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
KR101307247B1 (ko) * 2012-09-26 2013-09-11 가톨릭대학교 산학협력단 보상구조물을 이용한 실리콘웨이퍼 에칭 방법 및 이를 이용한 에너지 하베스터 제조 방법
US9978621B1 (en) 2016-11-14 2018-05-22 Applied Materials, Inc. Selective etch rate monitor
TWI807987B (zh) * 2016-11-30 2023-07-01 美商應用材料股份有限公司 使用神經網路的光譜監測
US10896833B2 (en) * 2018-05-09 2021-01-19 Applied Materials, Inc. Methods and apparatus for detecting an endpoint of a seasoning process
US11670154B2 (en) * 2020-10-06 2023-06-06 Nanya Technology Corporation System and method for controlling semiconductor manufacturing apparatus
CN115537784B (zh) * 2022-10-19 2024-07-23 北京北方华创真空技术有限公司 一种用于化学气相沉积设备的控制方法和系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139926A (ja) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp 自動終点検出装置
US5160402A (en) * 1990-05-24 1992-11-03 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection method
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
JPH07169741A (ja) * 1993-12-14 1995-07-04 Hitachi Ltd プラズマエッチング終点検出方法およびプラズマエッチング装置
JPH07335621A (ja) * 1994-06-10 1995-12-22 Sony Corp プラズマエッチング装置およびプラズマエッチング方法
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes

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