JP2003521106A - 可飽和ブラッグ反射器を含む反射鏡を有する半導体レーザ - Google Patents

可飽和ブラッグ反射器を含む反射鏡を有する半導体レーザ

Info

Publication number
JP2003521106A
JP2003521106A JP2001505117A JP2001505117A JP2003521106A JP 2003521106 A JP2003521106 A JP 2003521106A JP 2001505117 A JP2001505117 A JP 2001505117A JP 2001505117 A JP2001505117 A JP 2001505117A JP 2003521106 A JP2003521106 A JP 2003521106A
Authority
JP
Japan
Prior art keywords
laser
cavity
semiconductor laser
saturable
quantum well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001505117A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003521106A5 (https=
Inventor
ミン， シー． ウー，
ジーリン． シェン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of JP2003521106A publication Critical patent/JP2003521106A/ja
Publication of JP2003521106A5 publication Critical patent/JP2003521106A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06253—Pulse modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2001505117A 1999-06-22 2000-06-21 可飽和ブラッグ反射器を含む反射鏡を有する半導体レーザ Pending JP2003521106A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/338,458 1999-06-22
US09/338,458 US6449301B1 (en) 1999-06-22 1999-06-22 Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors
PCT/US2000/017127 WO2000079657A1 (en) 1999-06-22 2000-06-21 A semiconductor laser having a reflecting mirror which comprises a saturable bragg reflector

Publications (2)

Publication Number Publication Date
JP2003521106A true JP2003521106A (ja) 2003-07-08
JP2003521106A5 JP2003521106A5 (https=) 2007-08-02

Family

ID=23324892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001505117A Pending JP2003521106A (ja) 1999-06-22 2000-06-21 可飽和ブラッグ反射器を含む反射鏡を有する半導体レーザ

Country Status (6)

Country Link
US (1) US6449301B1 (https=)
EP (1) EP1188207B1 (https=)
JP (1) JP2003521106A (https=)
AT (1) ATE431002T1 (https=)
DE (1) DE60042157D1 (https=)
WO (1) WO2000079657A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003090792A (ja) * 2001-09-20 2003-03-28 Fuji Photo Film Co Ltd 光断層画像化装置
JP3532838B2 (ja) 2000-08-30 2004-05-31 独立行政法人 科学技術振興機構 超短パルス光源

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060241574A1 (en) * 1995-08-31 2006-10-26 Rizoiu Ioana M Electromagnetic energy distributions for electromagnetically induced disruptive cutting
US20100125291A1 (en) * 1995-08-31 2010-05-20 Rizoiu Ioana M Drill and flavored fluid particles combination
US20090143775A1 (en) * 1995-08-31 2009-06-04 Rizoiu Ioana M Medical laser having controlled-temperature and sterilized fluid output
US20060240381A1 (en) * 1995-08-31 2006-10-26 Biolase Technology, Inc. Fluid conditioning system
US20050281887A1 (en) * 1995-08-31 2005-12-22 Rizoiu Ioana M Fluid conditioning system
US6288499B1 (en) * 1997-06-12 2001-09-11 Biolase Technology, Inc. Electromagnetic energy distributions for electromagnetically induced mechanical cutting
US7320594B1 (en) * 1995-08-31 2008-01-22 Biolase Technology, Inc. Fluid and laser system
US6393035B1 (en) * 1999-02-01 2002-05-21 Gigatera Ag High-repetition rate passively mode-locked solid-state laser
US6647046B1 (en) * 1999-11-23 2003-11-11 Corning Lasertron, Inc. Mode-selective facet layer for pump laser
US6885683B1 (en) 2000-05-23 2005-04-26 Imra America, Inc. Modular, high energy, widely-tunable ultrafast fiber source
US20080157690A1 (en) * 2001-05-02 2008-07-03 Biolase Technology, Inc. Electromagnetic energy distributions for electromagnetically induced mechanical cutting
US20020176473A1 (en) * 2001-05-23 2002-11-28 Aram Mooradian Wavelength selectable, controlled chirp, semiconductor laser
EP1517415A1 (de) * 2003-09-18 2005-03-23 Leica Geosystems AG Geodätisches Gerät mit einer Laserquelle
US20100151406A1 (en) * 2004-01-08 2010-06-17 Dmitri Boutoussov Fluid conditioning system
EP1812823A4 (en) 2004-03-25 2009-08-05 Imra America Inc OPTICAL PARAMETRIC REINFORCEMENT, OPTICAL PARAMETRIC GENERATION AND OPTICAL PUMPING IN FIBER OPTICAL SYSTEMS
EP1799404B1 (en) * 2004-07-27 2020-01-08 Biolase, Inc. Contra-angle rotating handpiece having tactile-feedback tip ferrule
US7970030B2 (en) * 2004-07-27 2011-06-28 Biolase Technology, Inc. Dual pulse-width medical laser with presets
JP2006053690A (ja) * 2004-08-10 2006-02-23 Ricoh Co Ltd 画像処理装置、画像処理方法、画像処理プログラムおよび記録媒体
WO2006020946A2 (en) * 2004-08-13 2006-02-23 Biolase Technology, Inc. Dual pulse-width medical laser with presets
WO2014079478A1 (en) 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
US8724666B1 (en) * 2013-01-04 2014-05-13 Alcon Lensx, Inc. Self starting mode-locked laser oscillator
US9701564B2 (en) 2013-01-15 2017-07-11 Corning Incorporated Systems and methods of glass cutting by inducing pulsed laser perforations into glass articles
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US9687936B2 (en) 2013-12-17 2017-06-27 Corning Incorporated Transparent material cutting with ultrafast laser and beam optics
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
US9676167B2 (en) 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
EP3166895B1 (en) 2014-07-08 2021-11-24 Corning Incorporated Methods and apparatuses for laser processing materials
US9617180B2 (en) 2014-07-14 2017-04-11 Corning Incorporated Methods and apparatuses for fabricating glass articles
EP3169479B1 (en) 2014-07-14 2019-10-02 Corning Incorporated Method of and system for arresting incident crack propagation in a transparent material
CN208586209U (zh) 2014-07-14 2019-03-08 康宁股份有限公司 一种用于在工件中形成限定轮廓的多个缺陷的系统
WO2016010991A1 (en) 2014-07-14 2016-01-21 Corning Incorporated Interface block; system for and method of cutting a substrate being transparent within a range of wavelengths using such interface block
JP2017530867A (ja) * 2014-07-14 2017-10-19 コーニング インコーポレイテッド 長さおよび直径の調節可能なレーザビーム焦線を用いて透明材料を加工するためのシステムおよび方法
US10047001B2 (en) 2014-12-04 2018-08-14 Corning Incorporated Glass cutting systems and methods using non-diffracting laser beams
KR20170105562A (ko) 2015-01-12 2017-09-19 코닝 인코포레이티드 다중 광자 흡수 방법을 사용한 열적 템퍼링된 기판의 레이저 절단
JP7292006B2 (ja) 2015-03-24 2023-06-16 コーニング インコーポレイテッド ディスプレイガラス組成物のレーザ切断及び加工
EP3274313A1 (en) 2015-03-27 2018-01-31 Corning Incorporated Gas permeable window and method of fabricating the same
CN107835794A (zh) 2015-07-10 2018-03-23 康宁股份有限公司 在挠性基材板中连续制造孔的方法和与此相关的产品
EP3452418B1 (en) 2016-05-06 2022-03-02 Corning Incorporated Laser cutting and removal of contoured shapes from transparent substrates
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
KR20190035805A (ko) 2016-07-29 2019-04-03 코닝 인코포레이티드 레이저 처리를 위한 장치 및 방법
JP2019532908A (ja) 2016-08-30 2019-11-14 コーニング インコーポレイテッド 強度マッピング光学システムによる材料のレーザー切断
JP6923284B2 (ja) 2016-09-30 2021-08-18 コーニング インコーポレイテッド 非軸対称ビームスポットを用いて透明被加工物をレーザ加工するための装置及び方法
LT3529214T (lt) 2016-10-24 2021-02-25 Corning Incorporated Substrato apdorojimo stotis lakšto formos stiklo substratų lazeriniam mašininiam apdorojimui
US10752534B2 (en) 2016-11-01 2020-08-25 Corning Incorporated Apparatuses and methods for laser processing laminate workpiece stacks
US10688599B2 (en) 2017-02-09 2020-06-23 Corning Incorporated Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines
WO2018205087A1 (zh) * 2017-05-08 2018-11-15 深圳大学 一种异质结可饱和吸收镜及其制备方法、脉冲光纤激光器
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760578A (en) * 1985-11-29 1988-07-26 Matsushita Electric Industrial Co., Ltd. Semiconductor laser with a controllable transmittance layer
JPH09199799A (ja) * 1996-01-19 1997-07-31 Hitachi Ltd モード同期レーザ
JPH1065244A (ja) * 1996-04-30 1998-03-06 Lucent Technol Inc 可飽和ブラッグ反射器構造とその製造方法
JPH1065623A (ja) * 1996-07-02 1998-03-06 Cselt Spa (Cent Stud E Lab Telecomun) 極超短光パルスの発生方法及び装置
JPH11103122A (ja) * 1997-09-25 1999-04-13 Nec Corp モード同期半導体レーザ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345454A (en) * 1991-11-06 1994-09-06 At&T Bell Laboratories Antiresonant Fabry-Perot p-i-n modulator
US5257276A (en) * 1992-04-03 1993-10-26 California Institute Of Technology Strained layer InP/InGaAs quantum well laser
JP3080831B2 (ja) * 1994-02-03 2000-08-28 日本電気株式会社 多重量子井戸半導体レーザ
US5627854A (en) * 1995-03-15 1997-05-06 Lucent Technologies Inc. Saturable bragg reflector

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760578A (en) * 1985-11-29 1988-07-26 Matsushita Electric Industrial Co., Ltd. Semiconductor laser with a controllable transmittance layer
JPH09199799A (ja) * 1996-01-19 1997-07-31 Hitachi Ltd モード同期レーザ
JPH1065244A (ja) * 1996-04-30 1998-03-06 Lucent Technol Inc 可飽和ブラッグ反射器構造とその製造方法
JPH1065623A (ja) * 1996-07-02 1998-03-06 Cselt Spa (Cent Stud E Lab Telecomun) 極超短光パルスの発生方法及び装置
JPH11103122A (ja) * 1997-09-25 1999-04-13 Nec Corp モード同期半導体レーザ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3532838B2 (ja) 2000-08-30 2004-05-31 独立行政法人 科学技術振興機構 超短パルス光源
JP2003090792A (ja) * 2001-09-20 2003-03-28 Fuji Photo Film Co Ltd 光断層画像化装置

Also Published As

Publication number Publication date
US6449301B1 (en) 2002-09-10
EP1188207B1 (en) 2009-05-06
EP1188207A4 (en) 2005-09-21
WO2000079657A1 (en) 2000-12-28
EP1188207A1 (en) 2002-03-20
ATE431002T1 (de) 2009-05-15
DE60042157D1 (de) 2009-06-18

Similar Documents

Publication Publication Date Title
JP2003521106A (ja) 可飽和ブラッグ反射器を含む反射鏡を有する半導体レーザ
US7453913B2 (en) Resonant Fabry-Perot semiconductor saturable absorbers and two photon absorption power limiters
US6778565B2 (en) Pulse-generating laser
EP1735681B1 (en) Surface emitting laser with an integrated absorber
JP3168246B2 (ja) モードロックレーザ装置
US9065246B2 (en) Infrared laser
US6735234B1 (en) Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
Brovelli et al. Self-starting soliton modelocked Ti-sapphire laser using a thin semiconductor saturable absorber
US20030058904A1 (en) Pulse-generating laser
JP2002536823A (ja) 繰返し率の高い受動モード同期固体レーザ
US6538298B1 (en) Semiconductor saturable absorber mirror
US6826219B2 (en) Semiconductor saturable absorber device, and laser
US20040190567A1 (en) Optically pumped laser device for generating laser pulses
JP2015511772A (ja) セルフモード同期半導体ディスクレーザ（ｓｄｌ）
US6826205B1 (en) Etalon enhanced saturable reflector for mode-locked lasers
US20060227825A1 (en) Mode-locked quantum dot laser with controllable gain properties by multiple stacking
Lecomte et al. Diode-Pumped Passively Mode-Locked Nd: YVO$_ 4$ Lasers With 40-GHz Repetition Rate
Budz et al. Ultrashort Pulse Amplification at 1080 nm With a Long-Wavelength InGaAs–GaAs Flared Amplifier
Brown et al. Femtosecond sources based on vibronic crystals
WO2026064109A1 (en) High power gallium and nitrogen containing laser diode devices with a modulation device
Lee High power mode-locked semiconductor lasers and their applications
Guina et al. Mode-locked fiber lasers based on semiconductor saturable absorbers

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070524

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070524

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070615

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100615

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100915

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100924

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101014

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101026

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110531

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111025