JP2003347394A - Divided electrostatic adsorption apparatus - Google Patents

Divided electrostatic adsorption apparatus

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Publication number
JP2003347394A
JP2003347394A JP2002153644A JP2002153644A JP2003347394A JP 2003347394 A JP2003347394 A JP 2003347394A JP 2002153644 A JP2002153644 A JP 2002153644A JP 2002153644 A JP2002153644 A JP 2002153644A JP 2003347394 A JP2003347394 A JP 2003347394A
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electrode
electrostatic
electrostatic attraction
plate
attraction plate
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JP2002153644A
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JP4030350B2 (en
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Ko Fuwa
Ken Maehira
耕 不破
謙 前平
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Ulvac Japan Ltd
株式会社アルバック
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrostatic adsorption apparatus suited to a large-size insulated water. <P>SOLUTION: A plurality of electrostatic adsorption plates 12 are mounted on one mother board 11 to compose one electrostatic adsorption apparatus 10. The surface of the mother board 11 is flattened by polishing or the like. Thicknesses of the electrostatic adsorption plates 12 are made uniform and the surfaces are flattened so that warp or distortion is eliminated as a whole to obtain the electrostatic adsorption apparatus 10 whose surface is flat. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は静電吸着装置の技術分野にかかり、特に、大型基板を静電吸着するのに適した静電吸着装置に関する。 The present invention relates to relates to a technical field of electrostatic chuck, in particular, it relates to an electrostatic adsorption system suitable for electrostatically adsorbing a large substrate.

【0002】 [0002]

【従来の技術】近年の真空処理装置では、ガラス基板等の基板を処理するために、絶縁性の処理基板を静電吸着できる静電吸着装置が内部に配置されている。 In Recently vacuum processing apparatus, for processing a substrate such as a glass substrate, an electrostatic adsorption system can electrostatically adsorb the insulating substrate is disposed within.

【0003】図7の符号150は、そのような真空処理装置の一例であり、真空槽151の底面に配置された台座154上に静電吸着装置101が取り付けられている。 [0003] reference numeral 150 in FIG. 7 is an example of such a vacuum processing apparatus, an electrostatic adsorption device 101 is mounted on the pedestal 154 disposed on a bottom surface of the vacuum chamber 151.

【0004】この静電吸着装置101の平面図を図8に示し、そのX−X線截断面図を図9に示す。 [0004] shows a plan view of the electrostatic chuck 101 in FIG. 8, showing the line X-X transverse section view in FIG. 該静電吸着装置101は、第1、第2の電極111、112が配置された支持基板110を有している。 Electrostatic adsorption device 101 includes a first support substrate 110 to the second electrodes 111 and 112 are arranged.

【0005】第1、第2の電極111、112は櫛状にパターニングされており、その櫛の歯の部分は一定距離だけ離間して互いに噛み合わされている。 [0005] The first, second electrodes 111 and 112 are patterned into a comb shape, portions of the teeth of the comb are engaged with each other by a constant distance.

【0006】支持基板110は、グラファイト製の基材102と、その表面に形成された窒化ホウ素から成る絶縁膜103とを有しており、第1、第2の電極111、 [0006] The support substrate 110 includes a substrate 102 made of graphite, and an insulating film 103 consisting of boron nitride formed on the surface, the first, second electrodes 111,
112は、絶縁膜103上に配置され、基材102とは絶縁されている。 112 is disposed on the insulating film 103 is insulated from the substrate 102. 第1、第2の電極111、112の表面には、絶縁性の保護膜105が形成されている。 On the surface of the first, second electrodes 111 and 112, an insulating protective film 105 is formed.

【0007】上記のような静電吸着装置101を用い、 [0007] Using the electrostatic chuck 101, as described above,
スパッタリングプロセスを行う場合について説明すると、真空槽151内を真空排気し、静電吸着装置101 To describe the case of performing the sputtering process, and evacuating the vacuum chamber 151, electrostatic chuck 101
上に処理対象基板118を配置し、電圧源131によって、第1、第2の電極111、112間に電圧を印加する。 The processed substrate 118 was placed on top, by a voltage source 131, a voltage is applied between the first and second electrodes 111 and 112.

【0008】この電圧によって第1、第2の電極間に電界が形成され、絶縁性の処理対象基板118が静電吸着装置101上に静電吸着される。 A first this voltage, an electric field is formed between the second electrode, an insulating-processed substrate 118 is electrostatically attracted onto the electrostatic chuck 101.

【0009】次いで、真空槽151内にアルゴンガスを導入し、カソード電極152に負電圧又は交流電圧を印加し、ターゲット153をスパッタリングすると、処理対象基板118の表面にターゲット153の材料から成る薄膜が形成される。 [0009] Then, argon gas was introduced into the vacuum chamber 151, a negative voltage or an AC voltage is applied to the cathode electrode 152 and the target 153 to sputter, a thin film made of a material of a target 153 on the surface of the processed substrate 118 It is formed.

【0010】処理対象基板118が静電吸着装置101 [0010] processed substrate 118 is electrostatic chuck 101
上に静電吸着された状態では、処理対象基板118の裏面と静電吸着装置101の表面とは密着しており、従って、処理対象基板118と静電吸着装置101との間の熱伝達性能が高くなっている。 In the state which is electrostatically attracted to the upper, and in close contact with the back surface and the electrostatic chuck 101 on the surface of the processed substrate 118, therefore, the heat transfer performance between the processed substrate 118 and electrostatic chuck 101 Is high. そのため、薄膜形成の際に、台座154内に設けられたヒータを起動し、処理対象基板118を一定温度に昇温させて膜質の良い薄膜を成長させることができる。 Therefore, when the thin film formation, start the heater provided in the pedestal 154, the processed substrate 118 is heated to a constant temperature can be grown with good thin film quality and.

【0011】 [0011]

【発明が解決しようとする課題】近年では上記のような処理対象基板118が大型化し、それに伴って大型の静電吸着装置101が求められている。 Processed substrate 118 as described above, in recent years [0006] is large, an electrostatic adsorption device 101 large is demanded accordingly. 他方、静電吸着装置101には、基板118との密着性を高くするために表面に高い平坦性が求められているが、支持基板110 On the other hand, the electrostatic chuck 101, but high flatness on the surface are required in order to improve the adhesion to the substrate 118, supporting substrate 110
はセラミックであるため、大型化すると焼成の際に歪みや反り等が生じてしまい、低コストで大型且つ平坦な静電吸着装置を得ることは困難である。 Since a ceramic, would occur distortion or warpage during firing in size, it is difficult to obtain a large and flat electrostatic chuck at a low cost.

【0012】また、導電性材料の薄膜から成る第1、第2の電極を有しているため、静電吸着装置の表面を研磨し、反りや歪みを矯正し、平坦にすることも困難である。 Further, the first consisting of a thin film of electrically conductive material, because it has a second electrode, polishing the surface of the electrostatic chuck, to correct warping and distortion, it is also difficult to flatten is there.

【0013】本発明は上記要請に基いて創作されたものであり、その目的は、大型の処理機板を静電吸着できる静電吸着装置を提供することにある。 [0013] The present invention has been created based on the above requirements, and its object is to provide an electrostatic adsorption system can electrostatically adsorb large processor board.

【0014】 [0014]

【課題を解決するための手段】上記課題を解決するために、請求項1記載の発明は、第1の電極と、前記第1の電極と絶縁された第2の電極とが支持基板上に配置された静電吸着板を複数個と、前記各静電吸着板が取り付けられる母板とを有し、前記母板には、前記第1の電極に電気的に接続される第1の共通配線と、前記第1の共通配線とは絶縁され、前記第2の電極に電気的に接続される第2の共通配線とが設けられ、前記第1の共通配線と前記第2の共通配線の間に電圧を印加すると、前記各静電吸着板上の前記第1の電極と前記第2の電極の間に電圧が印加され、前記各静電吸着板に処理対象基板が静電吸着されるように構成された分割型静電吸着装置である。 In order to solve the above problems SUMMARY OF THE INVENTION The invention of Claim 1, wherein includes a first electrode, the first electrode and the second electrode and the supporting substrate that is insulated a plurality of arranged electrostatic chuck plate, said and a mother board in each of the electrostatic attraction plate is attached, the mother board, a first common electrically connected to the first electrode the wiring, wherein the first common wiring is insulated, the second common line and is provided to be electrically connected to the second electrode, the first common wiring and the second common wiring When a voltage is applied between the voltage between the first electrode and the second electrode on each of the electrostatic attraction plate is applied, processing object substrate to the each electrostatic attraction plate is electrostatically attracted it is configured split electrostatic chuck as. 請求項2記載の発明は、前記各静電吸着板は、前記母板に対して着脱可能に構成された請求項1記載の分割型静電吸着装置である。 According to a second aspect of the invention, wherein each of the electrostatic attraction plate is a split-type electrostatic chuck of detachably configured claim 1, wherein with respect to the base plate. 請求項3記載の発明は、前記各静電吸着板が有する端子と、前記母板が有する端子により、前記第1、第2の電極と前記第1、第2の共通配線とが電気的に接続されるように構成された請求項1又は請求項2のいずれか1項記載の分割型静電吸着装置である。 According to a third aspect of the invention, a terminal to which the each electrostatic attraction plate having, by terminal to which the base plate has the first, the second electrode and the first, second common line and is electrically a split type electrostatic chuck according to any one of the configured claim 1 or 2 to be connected.

【0015】本発明は上記のように構成されており、一台の母板に対し、複数個の静電吸着板が取り付けられるので、母板の大きさに比べると静電吸着板を小さくすることができる。 [0015] The present invention is constituted as described above, with respect to a single mother board, since a plurality of electrostatic attraction plate is attached, to reduce the electrostatic attraction plate compared to the size of the mother plate be able to.

【0016】母板は大型であっても、その表面を研磨することで平坦にすることが可能である。 [0016] Even motherboard is a large, it is possible to flatten by polishing the surface thereof. 静電吸着板は、 Electrostatic attraction plate
小型であればその表面を平坦にすることが可能であるから、平坦な母板に小型の静電吸着装置を複数個配置し、 Since it is possible to flatten the surface if small, by arranging a plurality of small electrostatic chuck in a flat base plate,
各静電吸着板の表面の高さを揃えると、全体として表面が平坦な静電吸着装置を得ることができる。 When aligning the height of the surface of the electrostatic attraction plate can surface as a whole to obtain a flat electrostatic chuck.

【0017】その際、各静電吸着板を着脱可能にしておくと、故障があった静電吸着板を速やかに交換することができる。 [0017] At this time, the keep the detachable each electrostatic attraction plate, the electrostatic attraction plate there was a failure can be quickly replaced.

【0018】また、静電吸着板と母板との電気的接続を端子によって行えば、着脱操作が容易になる。 Further, by performing the electrical connection between the electrostatic attraction plate and the base plate by pin it facilitates detachment operation.

【0019】 [0019]

【発明の実施の形態】図1の符号50は、本発明の静電吸着装置が用いられる真空処理装置の一例であり、接地電位に接続された真空槽51を有している。 Reference numeral 50 of the embodiment of the invention Figure 1 is an example of a vacuum processing apparatus electrostatic chuck of the present invention is used, it has a vacuum chamber 51 connected to the ground potential.

【0020】真空槽51の底壁上には、台座54を介して本発明の静電吸着装置10が配置されている。 [0020] on the bottom wall of the vacuum chamber 51, electrostatic chuck 10 of the present invention through the pedestal 54 is disposed.

【0021】図2は、この静電吸着装置10の平面図である。 [0021] FIG. 2 is a plan view of the electrostatic chuck 10. 該静電吸着装置10は、1枚の母板11と、複数の静電吸着板12を有している。 Electrostatic adsorption device 10 includes a single mother board 11, a plurality of electrostatic attraction plate 12.

【0022】各静電吸着板12は、母板11に対して着脱可能に構成されている。 [0022] Each electrostatic attraction plate 12 is detachably configured with respect to the base plate 11. 図3は、静電吸着板12を取り外した状態の母板11の平面図を示しており、点線は、静電吸着板12を装着した場合の静電吸着板12の位置を示している。 Figure 3 shows a plan view of a mother board 11 in a state of detaching the electrostatic chuck plate 12, the dotted line indicates the position of the electrostatic attraction plate 12 when mounting the electrostatic chuck plate 12.

【0023】各静電吸着板12は、図4に示すように、 [0023] Each electrostatic chuck plate 12, as shown in FIG. 4,
支持基板20を有しており、支持基板20上には、互いに離間された第1、第2の電極21a、21bが配置されている。 Has a supporting substrate 20, on the support substrate 20, first, second electrodes 21a, 21b are arranged spaced apart from each other. 第1、第2の電極21a、21bは、それぞれ櫛形にパターニングされており、その櫛形の歯の部分は、互いに一定間隔を開けて噛み合わされている。 First and second electrodes 21a, 21b is patterned in a comb shape, respectively, portions of the teeth of the comb are engaged at regular intervals.

【0024】図5は、図4の静電吸着板12のA−A線截断面図であり、図6は、B−B線截断面図及び静電吸着板12が装着されたときに、B−B線と同じ方向で截断した場合の母板11の截断面図である。 FIG. 5 is an A-A line transverse section view of the electrostatic attraction plate 12 in FIG. 4, FIG. 6, when the line B-B transverse section view and an electrostatic attraction plate 12 is mounted, it is a transverse section view of the base plate 11 in the case of cutting off in the same direction as the line B-B.

【0025】静電吸着板12の支持基板20は、グラファイト等の基材23表面に、PBN(窒化ホウ素)等の絶縁膜24が成膜されて構成されており、第1、第2の電極21a、21bは、絶縁膜24の表面に形成され、基材23とは接触しないようになっている。 The support substrate 20 of the electrostatic attraction plate 12, the substrate 23 surface such as graphite, an insulating film 24 such as PBN (boron nitride) is configured by deposition, first and second electrodes 21a, 21b are formed on the surface of the insulating film 24, so as not to contact with the substrate 23. また、この静電吸着板12では、第1、第2の電極21a、21bの表面を覆うように、絶縁性の保護膜25が形成され、耐磨耗性が高められている。 Further, in the electrostatic attraction plate 12, the first, second electrodes 21a, so as to cover the surface of the 21b, the insulating protective film 25 is formed, the abrasion resistance is enhanced.

【0026】また、支持基板20の底面には、図6に示されているように、第1、第2の突起状端子26a、2 Further, the bottom surface of the supporting substrate 20, as shown in FIG. 6, the first, second projection terminals 26a, 2
6bが突出して設けられている。 6b is provided to project.

【0027】支持基板20には貫通孔が穿設されており、第1、第2の突起状端子26a、26bは、その貫通孔内に配置された埋込配線27によって、第1、第2 [0027] the supporting substrate 20 is bored through-hole, first, second projection terminals 26a, 26b, depending embedded wiring 27 positioned within the through hole, first, second
の電極21a、21bにそれぞれ接続されている。 They are respectively connected to the electrodes 21a, to 21b.

【0028】また埋込配線27は絶縁スリーブなどにより基材23とは電気的に絶縁されている。 Further the embedded wiring 27 is electrically insulated from the substrate 23 by an insulating sleeve.

【0029】基材23をAl 23などの絶縁物で構成すれば、絶縁部材を省くことができて好都合である。 [0029] By constituting the substrate 23 with an insulator such as Al 2 O 3, it is advantageous to be able to dispense with the insulating member.

【0030】母板11は、絶縁物で構成された下板31 The mother board 11 includes a lower plate formed of an insulator 31
と上板32とが貼り合わされて構成されており、上板3 And it is configured by bonding the upper plate 32, upper plate 3
2には、複数の凹部34が形成されている。 The second, a plurality of recesses 34 are formed.

【0031】この凹部34は、所定枚数の静電吸着板1 [0031] The recess 34, a predetermined number of the electrostatic attraction plate 1
2を位置合わせして上板32上に乗せたときに、各静電吸着板12の第1、第2の突起状端子26a、26bに対応する位置に配置されており、各静電吸着板12を母板11に装着する際に、第1、第2の突起状端子26を凹部34に嵌入させると、静電吸着板12は、支持基板20の底面が上板32の表面に密着した状態で、母板1 When placed on the upper plate 32 2 are aligned, first each of the electrostatic attraction plate 12, the second projection terminals 26a, are disposed at positions corresponding to 26b, each of the electrostatic attraction plate 12 when mounted on the mother board 11, the first, is fitted into the second projecting terminal 26 into the recess 34, the electrostatic attraction plate 12, the bottom surface of the supporting substrate 20 is in close contact with the surface of the upper plate 32 in the state, the mother plate 1
1上に配置されるようになっている。 It is adapted to be placed on 1.

【0032】母板11の表面は、反り、曲がり、歪みやうねりがなく、平坦に形成されており、各静電吸着板1 The surface of the base plate 11, warpage, bend, there is no distortion or undulation are flatly formed, each of the electrostatic attraction plate 1
2も一定厚みに形成されているため、複数の静電吸着板12を上板32の表面に密着させた状態で配置すると、 2 since the formed constant thickness, placing a plurality of electrostatic attraction plate 12 while being in close contact with the surface of the upper plate 32,
各静電吸着板12の表面は、上板32の表面、即ち母板11の表面から同じ高さに位置するようになっている。 Surface of each of the electrostatic attraction plate 12 has a surface of the upper plate 32, that is, from the surface of the base plate 11 to be positioned at the same height.

【0033】各静電吸着板12の表面は平坦であり、各静電吸着装置12を母板11に装着すると、全体として平坦な表面を有する静電吸着装置10が得られる。 The surface of each of the electrostatic attraction plate 12 is flat, when each electrostatic chuck 12 attached to the base plate 11, electrostatic chuck 10 having a flat surface as a whole is obtained.

【0034】凹部34の底部には、第1、第2の内部端子36a、36bが配置されており、静電吸着板12が母板11に装着されると、第1、第2の突起状端子26 [0034] The bottom of the recess 34, the first and second internal terminals 36a, 36b are arranged, the electrostatic attraction plate 12 is mounted on the mother board 11, first, second protrusion terminal 26
a、26bは、第1、第2の内部端子36a、36bに接触し、第1、第2の突起状端子26a、26bと第1、第2の内部端子36a、36bとが電気的に接続される。 a, 26b, the first and second inner terminals 36a, in contact with 36b, first, second projection terminals 26a, 26b and the first and second inner terminals 36a, 36b and is electrically connected It is.

【0035】下板31内には、第1、第2の共通配線1 [0035] The lower plate 31, first, second common line 1
4a、14bが引き回されており、第1、第2の共通配線14a、14bと、第1、第2の内部端子36a、3 4a, 14b have been drawn, first, second common wire 14a, and 14b, first and second internal terminals 36a, 3
6bとは、下板31の貫通孔内に配置された埋込配線3 6b and the embedded wiring 3 that is disposed on the lower plate 31 of the through hole
7によって接続されている。 It is connected by 7.

【0036】母板11の側面には、図2および図3に示すように、第1、第2の外部端子15a、15bが設けられており、第1、第2の共通配線14a、14bは、 [0036] the side surface of the base plate 11, as shown in FIGS. 2 and 3, first and second external terminals 15a, and 15b are provided, first, second common lines 14a, 14b are ,
第1、第2の外部端子15a、15bにそれぞれ接続されている。 First and second external terminals 15a, are connected to 15b.

【0037】第1、第2の外部端子15a、15bは、 The first and second external terminals 15a, 15b are
外部配線32によって、真空槽51の外部に配置された電源31に接続されている。 The external wiring 32 is connected to a power source 31 disposed outside the vacuum vessel 51. この電源31を動作させ、 The power supply 31 is operated,
第1の外部端子15aに正電圧を印加し、第2の外部端子15bに負電圧を印加すると、第1、第2の共通配線14a、14bと、内部端子36a、36bと、突起状端子26aと、埋込配線27、37とを介して、母板1 A positive voltage is applied to the first external terminal 15a, and a negative voltage is applied to the second external terminal 15b, first, second common wire 14a, and 14b, the internal terminals 36a, and 36b, the projecting terminal 26a and, via the embedded wiring 27, 37, the mother plate 1
1に装着された全部の静電吸着板12の第1、第2の電極21a、21bに、正電圧と負電圧がそれぞれ印加される。 First electrostatic attraction plate 12 all mounted on the first and second electrodes 21a, to 21b, the positive and negative voltages are applied respectively.

【0038】ここでは、母材11には、第1、第2の共通配線14a、14bが3組設けられており、1組の第1、第2の共通配線14a、14bには、3個の静電吸着板12の第1、第2の電極21a、21bが接続されるようになっている。 [0038] Here, the base material 11, the first and second common wirings 14a, and 14b are provided three sets, the first set of the second common wiring 14a, the 14b, 3 pieces first electrostatic adsorption plate 12, the second electrode 21a, 21b is adapted to be connected.

【0039】図1の真空処理装置50はスパッタリング装置であり、真空槽51内部の天井側にはカソード電極52が配置されている。 The vacuum processing apparatus 50 of FIG. 1 is a sputtering apparatus, the ceiling side of the vacuum chamber 51 the cathode electrode 52 is disposed. カソード電極52の表面にはターゲット53が取り付けられている。 Target 53 is mounted on the surface of the cathode electrode 52.

【0040】真空槽50には真空排気系57が接続されており、該真空排気系57によって真空槽50内部を所定圧力まで真空排気した後、真空槽51内部の真空雰囲気を維持しながら、処理対象基板を真空槽51内に搬入し、静電吸着装置10上に配置する。 [0040] The vacuum chamber 50 is connected to a vacuum evacuation system 57, after evacuating the inside of the vacuum chamber 50 to a predetermined pressure by the vacuum exhaust system 57 while maintaining the vacuum atmosphere in the vacuum chamber 51, the processing It carried a target substrate in a vacuum chamber 51, placed on electrostatic chuck 10.

【0041】図1の符号18はその状態の処理対象基板を示しており、ガラス基板等の絶縁性材料で構成されている。 The reference numeral 18 in FIG. 1 shows a processed substrate in that state, is composed of an insulating material such as a glass substrate. この処理対象基板18の裏面は、母板11上の複数の静電吸着板12の表面に接触している。 Rear surface of the processed substrate 18 is in contact with surfaces of a plurality of electrostatic attraction plate 12 on the mother board 11.

【0042】その状態から電源31を起動し、全部の静電吸着板12の第1、第2の電極21a、21bに正電圧と負電圧をそれぞれ印加すると、特に、各静電吸着板12の第1、第2の電極21a、21bのパターンの歯の部分の表面近傍に強い電界が形成される。 The launch power 31 from this state, first of all the electrostatic attraction plate 12, the second electrode 21a, when a positive voltage and a negative voltage is applied respectively to 21b, in particular, of each of the electrostatic attraction plate 12 first and second electrodes 21a, a strong electric field near the surface of the tooth portion of the pattern of 21b is formed.

【0043】絶縁性の処理対象基板18はその電界の中に位置しており、電界から力を受け、静電吸着板12の表面に静電吸着される。 The insulating substrate to be processed 18 is located in the electric field, receives a force from the electric field, it is electrostatically attracted to the surface of the electrostatic attraction plate 12.

【0044】その状態でガス導入系58からスパッタリングガスを導入し、カソード電極52に負電圧や交流電圧を印加し、ターゲット53をスパッタリングすると、 The introduced sputtering gas from the gas introduction system 58 in this state, by applying a negative voltage or an AC voltage to the cathode electrode 52 and the target 53 is sputtered,
処理対象基板18表面に薄膜が形成される。 Thin film is formed on the processed substrate 18 surface.

【0045】処理対象基板18は、静電吸着力によって静電吸着板装置10の表面に密着しており、静電吸着装置10との熱伝達性能が高くなっている。 The processed substrate 18 is adhered to the surface of the electrostatic attraction plate 10 by the electrostatic force, the heat transfer performance is increased with the electrostatic chuck 10. 従って、台座54内に設けられたヒータや冷却装置により、処理対象基板18を昇温又は冷却することが可能であり、温度制御しながら薄膜を成長させ、膜質の良い薄膜を得ることができる。 Accordingly, the heater and cooling device provided in the pedestal 54, it is possible to warm or cool the processed substrate 18, to grow a thin film with a temperature control, it is possible to obtain a good thin film quality.

【0046】なお、以上は本発明の静電吸着装置10 [0046] Incidentally, above electrostatic chuck of the present invention 10
を、スパッタリングを行う真空処理装置50に適用した例を説明したが、本発明の静電吸着装置10は、CVD The has been described an example of applying the vacuum processing apparatus 50 for sputtering, electrostatic chuck 10 of the present invention, CVD
装置や蒸着装置等の薄膜形成装置の他、ドライエッチング装置にも用いることができる。 Another thin film forming apparatus such as a device or vapor deposition device, it can also be used for dry etching apparatus.

【0047】また、搬送ロボットのアーム先端に取り付けると、大型の基板を複数の静電吸着板12上に静電吸着した状態で所望の場所に搬送することができる。 Further, when attached to the arm tip of the transfer robot can be transported to a desired location while electrostatically attracting a large substrate on a plurality of electrostatic attraction plate 12.

【0048】上記実施例では、第1、第2の電極に正電圧と負電圧を印加したが、極性は問わない。 [0048] In the above embodiment, first, was applied a positive voltage and a negative voltage to the second electrode, the polarity is not limited. 真空槽や他の部材との間に放電が生じず、第1、第2の電極間に電位差が生じて絶縁性の処理基板が静電吸着されればよい。 No discharge occurs between the vacuum chamber and other members, the first potential difference is insulative substrate occurs need be electrostatically attracted between the second electrode.

【0049】また、上記実施例では、静電吸着板12に突起状端子26a、26bを設け、母板11にその突起状の端子が嵌入する凹部34を設けたが、静電吸着板1 [0049] In the above embodiment, the projecting terminal 26a to the electrostatic attraction plate 12, and 26b is provided, but the protruding pin mother board 11 has a recess 34 that fits, electrostatic adsorption plates 1
2側に凹部を設け、母板11側に突起状端子を設けて第1、第2の電極と第1、第2の共通電極とを接続するようにしてもよい。 A recess provided in two side, first provided with a projecting terminal to the base plate 11 side, and a second electrode first, may be connected to the second common electrode.

【0050】また、上記実施例では、1台の母板11に対して9台の静電吸着板12を装着したが、本発明の静電吸着装置には、1台の母板11に対して2台以上8台以下、又は10台以上の静電吸着板12を装着する静電吸着装置が含まれる。 [0050] In the above embodiment, although equipped with nine electrostatic attraction plate 12 with respect to one base plate 11, the electrostatic chuck of the present invention, with respect to one of the base plate 11 eight two or more Te below, or a electrostatic chuck for mounting ten or more electrostatic attraction plate 12.

【0051】また上記実施例では、静電吸着板12の支持基板20をグラファイトとしたが、それに限るものではなく埋込配線との絶縁を確保する部材を伴なえば、A [0051] In the above embodiment, the supporting substrate 20 of the electrostatic attraction plate 12 and graphite, if withered accompanied members to secure insulation between the not buried interconnection limited thereto, A
l、SUSなどの金属でもよく、Al 23 、AlN、S l, may be a metal such as SUS, Al 2 O 3, AlN , S
34 、サイアロンなどの絶縁性材料であれば、絶縁部材を必要とせず好適である。 i 3 N 4, if an insulating material such as sialon, it is preferable not require an insulating member.

【0052】また絶縁膜24をP−BNとしたが、シリコーンゴム、ポリイミドなどの高分子シートを貼りつけてもよく、さらにはPVDやCVDによる酸化膜、窒化膜などの絶縁性膜でもよい。 [0052] Although the insulating film 24 and the P-BN, silicone rubber may be adhered to the polymer sheet, such as a polyimide, more oxide film by PVD or CVD, may be an insulating film such as a nitride film.

【0053】 [0053]

【発明の効果】大型基板の静電吸着に適している。 Effects of the Invention are suitable for electrostatic attraction of the large substrate.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の静電吸着装置が用いられる真空処理装置の一例 An example of a vacuum processing apparatus [1] Electrostatic adsorption apparatus of the present invention is used

【図2】静電吸着板と母板の位置関係を説明するための平面図 Figure 2 is a plan view illustrating a positional relationship between the electrostatic attraction plate and the base plate

【図3】母板の第1、第2の共通電極の配置パターンを説明するための平面図 [3] The first mother plate, plan view for explaining an arrangement pattern of the second common electrode

【図4】静電吸着板の第1、第の電極の配置パターンを説明するための平面図 [4] The first electrostatic adsorption plates, plan view for explaining an arrangement pattern of the electrode

【図5】そのA−A線截断面図 FIG. 5 is the A-A line cutting off side view

【図6】静電吸着板と母板の図4のB−B線に対応する位置での截断面図 [6] transverse section view at a position corresponding to the line B-B of Figure 4 of the electrostatic attraction plate and the base plate

【図7】従来技術の静電吸着装置が配置された真空処理装置 [7] The vacuum processing apparatus prior art electrostatic chuck of are arranged

【図8】従来技術の静電吸着装置の第1、第2の電極の配置パターンを説明するための平面図 [8] first, plan view for explaining an arrangement pattern of the second electrode of the prior art electrostatic chuck of

【図9】そのX−X線截断面図 [9] The X-X-ray cutting off side view

【符号の説明】 DESCRIPTION OF SYMBOLS

10……静電吸着装置11……母板12……静電吸着板14a……第1の共通線14b……第2の共通線21a……第1の電極21b……第2の電極20……支持基板26a、26b……静電吸着板の端子36a、36b……母板の端子 10 ...... electrostatic chuck 11 ...... mother board 12 ...... electrostatic attraction plate 14a ...... first common line 14b ...... second common line 21a ...... first electrode 21b ...... second electrode 20 ...... support substrate 26a, 26b ...... electrostatic attraction plate terminals 36a, the 36b ...... mother board terminal

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5F031 CA05 GA09 GA32 GA33 HA02 HA03 HA18 HA19 HA37 HA38 MA29 ────────────────────────────────────────────────── ─── front page of continued F-term (reference) 5F031 CA05 GA09 GA32 GA33 HA02 HA03 HA18 HA19 HA37 HA38 MA29

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】第1の電極と、前記第1の電極と絶縁された第2の電極とが支持基板上に配置された静電吸着板を複数個と、 前記各静電吸着板が取り付けられる母板とを有し、 前記母板には、前記第1の電極に電気的に接続される第1の共通配線と、 前記第1の共通配線とは絶縁され、前記第2の電極に電気的に接続される第2の共通配線とが設けられ、前記第1の共通配線と前記第2の共通配線の間に電圧を印加すると、前記各静電吸着板上の前記第1の電極と前記第2 1. A first electrode, a plurality of the first electrode and the second electrode and the electrostatic attraction plate disposed on a support substrate that is insulated, the respective electrostatic attraction plate is mounted and a mother board that is, the mother board, the first common wiring electrically connected to the first electrode, and the first common line is insulated, to the second electrode second common wiring and is provided to be electrically connected, the first the common wiring and applying a voltage between said second common line, said first electrode on said each of the electrostatic attraction plate the second
    の電極の間に電圧が印加され、前記各静電吸着板に処理対象基板が静電吸着されるように構成された分割型静電吸着装置。 The voltage is applied between the electrodes, the divided-type electrostatic chuck of the processing target substrate in each of the electrostatic attraction plate is configured to be electrostatically attracted.
  2. 【請求項2】前記各静電吸着板は、前記母板に対して着脱可能に構成された請求項1記載の分割型静電吸着装置。 Wherein said each of the electrostatic attraction plate is detachably attached to claims 1 splittable electrostatic chuck according to the motherboard.
  3. 【請求項3】前記各静電吸着板が有する端子と、前記母板が有する端子により、前記第1、第2の電極と前記第1、第2の共通配線とが電気的に接続されるように構成された請求項1又は請求項2のいずれか1項記載の分割型静電吸着装置。 A terminal according to claim 3, wherein each of the electrostatic attraction plate has, by terminal to which the base plate has the first, the second electrode and the first, second common line and are electrically connected configuration claims 1 or split electrostatic chuck of any one of claims 2 to.
JP2002153644A 2002-05-28 2002-05-28 Split electrostatic chuck Active JP4030350B2 (en)

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US9347886B2 (en) 2013-06-24 2016-05-24 Samsung Display Co., Ltd. Apparatus for monitoring deposition rate, apparatus provided with the same for depositing organic layer, method of monitoring deposition rate, and method of manufacturing organic light emitting display apparatus using the same
JP2016539489A (en) * 2013-09-20 2016-12-15 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Substrate carrier with integrated electrostatic chuck
US9496317B2 (en) 2013-12-23 2016-11-15 Samsung Display Co., Ltd. Method of manufacturing organic light emitting display apparatus

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