JP2003332042A - Organic electronic device element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To appropriately prevent degradation in an organic EL structure caused by moisture and gas in an organic EL element with the organic EL structure provided on one face of a resin board with moisture permeability and gas permeability. <P>SOLUTION: An organic EL structure 30 formed by arranging organic layers 51-54 made of an organic luminescent material, between a positive electrode 40 and a negative electrode 60 opposed to each other, is formed on one face of a resin board 10. One face, formed with the organic EL structure 30, of the resin board 10 is covered with a board protective film 20 made of an alumina film or the like formed by an atomic layer growth method. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electronic device element in which an organic EL device, an organic laser, an organic electronic device such as an organic transistor is provided on one surface of a substrate having moisture permeability and gas permeability such as a resin substrate. .

[0002]

2. Description of the Related Art As an organic electronic device element of this type, for example, an organic EL (electroluminescence) element is known. Generally, an organic EL element is one in which a structure (organic EL structure) formed by disposing an organic light emitting material between a pair of electrodes facing each other is disposed on one surface of a substrate.

In such an organic EL element, the organic light-emitting material is deteriorated by the moisture in the use atmosphere, and
There is a problem that a non-light emitting area is formed in the original light emitting area of the structure, which causes deterioration of display quality.

To solve this problem, Japanese Patent Laid-Open No. 2001-284
In the '042 publication, the atomic layer growth method (hereinafter referred to as AL
An inorganic amorphous film made of Al ₂ O ₃ or the like formed by the method E) is formed so as to cover the organic light emitting material on the outer surface of the organic EL structure, and is used as a protective film. Is proposed.

[0005]

However, in the organic EL device described in the above publication, the substrate is a glass substrate having no moisture permeability. Here, if the substrate is a substrate having moisture permeability, for example, a resin substrate, moisture may enter from the substrate side, and thus the non-light emitting region may be formed.

As a means for solving this problem, for example, as described in JP-A-8-167475 and JP-A-9-161967, an inorganic thin film is vacuum-deposited, sputtered,
Plastic substrate (resin substrate) by plasma CVD method
Has been proposed.

However, in general, a film formed by vacuum vapor deposition, sputtering, or plasma CVD method is likely to have pinholes, so that moisture penetrates into the organic EL structure through the substrate from the pinhole portion, The problem that a non-light emitting area is formed tends to occur. Further, since such a substrate also has gas permeability, there is a possibility that the organic material may be deteriorated by the penetration of oxygen or the like.

Such a problem is common not only to the organic EL element but also to an organic electronic device element in which an organic electronic device made of an organic material is provided on one surface of a substrate having moisture permeability and gas permeability. It is considered a problem. For example, as the substrate having moisture permeability and gas permeability, not only a resin substrate but also a substrate such as a ceramic substrate or a glass epoxy substrate can be used.

As an organic electronic device, organic E
In addition to L, capacitors and polymer batteries already in practical use, conductive devices such as electrodes, light emitting devices such as organic lasers, photo conversion devices such as photosensors and solar cells, organic transistors and organic integrated devices. Current control devices such as, and active control devices such as optical control devices such as organic optical memories and organic optical switches.

In other words, even in these organic electronic devices, it is considered that there is a possibility that the organic material is deteriorated by the moisture and the gas penetrating through the substrate and the device characteristics are deteriorated.

In view of the above problems, the present invention provides an organic electronic device element in which an organic electronic device is provided on one surface of a substrate having moisture permeability and gas permeability, and the deterioration of the organic electronic device due to moisture or gas is appropriately performed. The purpose is to be able to prevent.

[0012]

According to the present invention, a film formed by an atomic layer growth method is more suitable for a member to be formed than a film formed by vacuum vapor deposition, sputtering or plasma CVD method. It was made paying attention to the fact that it is possible to realize a film having excellent covering properties and pinholes reduced as much as possible.

That is, according to the first aspect of the invention, in an organic electronic device element including a substrate (10) having moisture permeability and gas permeability, and an organic electronic device (30) formed on one surface of the substrate, At least one of the one surface of the substrate on which the organic electronic device is formed and the other surface opposite to the one surface is covered with a substrate protective film (20) formed by an atomic layer growth method.

According to this, since the substrate protective film that covers at least one of the one surface and the other surface of the substrate is formed by the atomic layer growth method and has excellent covering properties and almost no pinholes, water and moisture from the covering portion can be prevented. Ingress of gas is prevented.

Therefore, according to the present invention, in the organic electronic device element in which the organic electronic device is provided on one surface of the substrate having moisture permeability and gas permeability, deterioration of the organic electronic device due to moisture or gas is appropriately prevented. be able to.

The substrate protective film (2) according to claim 1
0) can be a laminated film of a film formed by the atomic layer growth method and a film formed by a method different from the atomic layer growth method, as in the invention described in claim 2.

Specifically, as the method different from the atomic layer growth method, as described in the inventions of claims 3 to 5, the sputtering method, the CVD method, and the vapor deposition method can be adopted.

Generally, it is difficult to form a too thick film by the atomic layer growth method, and in comparison, it is possible to form a thick film by the sputtering method, the CVD method and the vapor deposition method as compared with the atomic layer growth method. It's easy.

Therefore, if the substrate protective film has the above-mentioned laminated film structure, the film thickness can be secured by a film formed by a method different from the atomic layer growth method, and the strength and scratches of the substrate protective film can be prevented. There is an advantage that resistance can be improved.

Then, as in the invention described in claim 6,
In the substrate protective film (20) having such a laminated structure,
The film formed by the atomic layer growth method is Al₂O₃, T
iO ₂From one selected from SiN, SiN, and ZnO
Therefore, the film formed by a method different from the atomic layer growth method is
SiN, SiO₂, Si, ZnS, ZnS-SiO₂, S
It can consist of one kind selected from iON and MgO.
It

Further, the invention according to claim 7 is characterized in that the substrate (10) is a resin substrate. As the substrate according to any one of claims 1 to 6, a resin substrate can be adopted.

Further, in the invention described in claim 8, an adhesion layer (80) having a better adhesion to the substrate than the substrate protection film is interposed between the substrate (10) and the substrate protection film (20). It is characterized by

According to this, the adhesion between the substrate and the substrate protective film can be improved, which is preferable. As such an adhesion layer, an inorganic film formed by a sputtering method, a CVD method, a vapor deposition method or the like can be adopted.

In particular, when the substrate is a resin substrate (resin substrate), the substrate protective film formed by the atomic layer growth method is an inorganic amorphous film, and the inorganic amorphous film and the resin substrate are heat-insulated. Since the difference in the expansion coefficient is large, the adhesion may be weakened due to temperature change or the like.

In this respect, by interposing an adhesive layer between the resin substrate and the substrate protective film, such a problem is avoided as much as possible and the adhesiveness between the resin substrate and the substrate protective film is ensured. It is possible to more appropriately prevent deterioration of the organic electronic device due to moisture or gas.

Further, in the invention according to claim 9, a substrate protective film (20) formed by an atomic layer growth method is provided on either one surface or the other surface of the substrate (10),
On the other hand, the other side protective film (90) formed by a method different from the atomic layer growth method is provided.

Generally, in a film formed by the atomic layer growth method, the film stress is tensile stress (stress applied in the direction in which the film shrinks).
Is. On the other hand, sputtering method, CVD method,
By a film forming method different from the atomic layer growth method such as the vapor deposition method, it is possible to form a film in which the film stress is a compressive stress (a stress applied in the extending direction of the film).

Therefore, in the invention of claim 9, the substrate protective film having a tensile stress is formed on one surface of the substrate, and the other protective film having a compressive stress is formed on the other surface of the substrate, so that the direction of the direction of the substrate can be improved. Different film stresses act on the substrate, and the substrate can be curved so that the substrate surface on the substrate protective film side is concave and the substrate surface on the other protective film side is convex.

By bending the substrate in this way, the substrate protective film can be made to be in a slightly contracted state, so that the tensile stress applied to the substrate protective film can be relaxed,
As a result, there is an advantage that the reliability of the substrate protective film is improved.

Further, the invention according to claim 10 is characterized in that the surface of the substrate (10) on which the substrate protective film (20) is formed is subjected to ultraviolet irradiation or plasma treatment.

According to this, since the surface of the substrate on which the substrate protective film is formed can be roughened at the atomic level, the adhesion of the substrate protective film formed by the atomic layer growth method to the substrate can be improved. .

Further, the invention according to claim 11 is characterized in that the outer surface of the organic electronic device (30) is covered with a device protective film (70) formed by an atomic layer growth method.

According to this, the outer surface of the organic electronic device is also covered with the device protective film formed by the atomic layer growth method, so that the deterioration of the organic electronic device due to moisture or gas can be prevented at a higher level. You can

The device protection film (70) according to claim 11 is different from the film formed by the atomic layer growth method and the method different from the atomic layer growth method as in the invention according to claim 12. A laminated film with the formed film can be used.

If the device protective film has the above-mentioned laminated film structure, the film thickness is secured by a film formed by a method different from the atomic layer growth method for the same reason as the above-mentioned invention. Therefore, there is an advantage that the strength of the device protective film and the resistance to scratches can be improved.

Furthermore, as in the thirteenth aspect of the present invention, the outer surface of the device protective film (70) may be covered with a film made of resin. According to this, since the device protective film can be protected by the resin film, the resistance to scratches and the like can be further enhanced.

Here, as in the invention of claim 14, the atomic layer growth method for forming the device protective film (70) is performed at a temperature not higher than the glass transition point of the organic material constituting the organic electronic device (30). It is preferable that the film is formed at the film forming temperature.

This is because the device protective film is formed after forming the organic electronic device, but the atomic layer growth method for forming the device protective film is higher than the glass transition point of the organic material constituting the organic electronic device. This is because the characteristics of the organic electronic device may be deteriorated due to crystallization of the organic material if performed at the film temperature.

According to the fifteenth aspect of the invention, the organic electronic device (30) is a structure in which the organic light emitting material (51 to 54) is arranged between a pair of electrodes (40, 60) facing each other. It is characterized by consisting of.

The organic electronic device element according to any one of claims 1 to 14 can be applied as such an organic EL element.

The reference numerals in parentheses of the above means are examples showing the correspondence with the concrete means described in the embodiments described later.

[0042]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described with reference to the respective embodiments shown in the drawings. Note that, in the following respective embodiments, the same portions are denoted by the same reference numerals in the drawings for simplification of description.

(First Embodiment) FIG. 1 is a diagram showing a schematic sectional structure of an organic EL element S1 as an organic electronic device element according to a first embodiment of the present invention.

The substrate 10 is made of a resin substrate (resin substrate), a ceramic substrate, a glass epoxy substrate, or the like, and has moisture permeability that allows moisture to pass therethrough and gas permeability that allows gas to pass therethrough. In this example, the substrate 10 is a transparent resin substrate 10 made of polycarbonate, epoxy resin, polyolefin or the like.

On one surface of the resin substrate 10, a substrate protective film 20 covering the one surface is formed by an atomic layer growth method (atomic layer epitaxy method, hereinafter referred to as ALE method in the embodiment). This substrate protection film 20 is
This is an inorganic amorphous film made of one kind selected from Al ₂ O ₃ , TiO ₂ , SiN, ZnO, etc., and in this example, alumina (Al
₂ O ₃ ) film.

Here, one surface of the resin substrate 10, that is, the surface of the substrate 10 on which the substrate protective film 20 is formed, is subjected to ultraviolet irradiation or plasma treatment using argon, oxygen or the like.

As a result, since one surface of the resin substrate 10 can be roughened at the atomic level, the adhesion of the substrate protective film 20 formed by the ALE method to the substrate 10 can be improved. In this example, one surface of the resin substrate 10 is subjected to oxygen plasma treatment.

An organic EL structure 30 as an organic electronic device is formed on one surface of the resin substrate 10, that is, on the substrate protective film 20. That is, in this embodiment, one surface of the resin substrate 10 on which the organic electronic device is formed is covered with the substrate protective film 20, and the organic electronic device 30 is formed on the substrate protective film 20. ing.

The organic EL structure 30 as the organic electronic device is a structure in which organic layers 51 to 54 containing an organic light emitting material are arranged between a pair of electrodes 40 and 60 facing each other. This organic EL structure 30 is a normal organic E
The material and film configuration used for the L element can be adopted, but an example of a specific configuration will be described.

First, the anode (lower electrode) 40 is formed on the substrate protection film 20. This anode 40 is ITO
It is made of a transparent conductive film such as (indium tin oxide) film and functions as a hole injecting electrode.

In this example, the anode 40 is formed by patterning an ITO film (for example, 150 nm thick) formed on the substrate protection film 20 by the sputtering method by etching or the like, so that the anode 40 is moved in the left-right direction in FIG. It is formed in an extending stripe shape. As an example of the stripe shape, strip-shaped anodes 40 having a width of 500 μm can be arranged in a stripe shape at intervals of 50 μm.

On the anode 40, a hole injection layer 51, a hole transport layer 52, and a light emitting layer 5 made of an organic light emitting material.
3 and the electron transport layer 54 are sequentially formed. In this example,
The hole injection layer 51 is a film in which copper phthalocyanine is formed to a thickness of 150 nm, and the hole transport layer 52 is formed of tetratriphenylamine (TP having a glass transition point of about 130 ° C.).
TE) with a film thickness of about 40 nm.

Further, in this example, the light emitting layer 53 is formed by doping tris (8-quinolinol) aluminum (Alq) having a glass transition point of 170 ° C. with a quinacridone compound (having no glass transition point) as a fluorescent substance. About 4
It is a film formed with a film thickness of 0 nm. Further, the electron transport layer 54 is a film formed of Alq with a film thickness of about 60 nm.

Organic layers 51 to 5 containing these organic light emitting materials
4 can be formed into a film by sequentially performing vapor deposition at a vacuum degree of about 10 ⁻⁶ Torr. A cathode (upper electrode) 60 made of metal or the like and functioning as an electron injection electrode is formed on the electron transport layer 54.

In this example, the cathode 60 is an Al (aluminum) film (for example, 100 nm thick) formed by vacuum evaporation using a mask, and is formed in a stripe shape extending in the direction perpendicular to the paper surface of FIG. It is a thing. As an example of this stripe shape, strip-shaped cathodes 60 having a width of 500 μm can be arranged in a stripe shape at intervals of 50 μm.

Thus, the organic EL structure 30 of this example
Is a stripe-shaped anode 40 and cathode 60 which are orthogonal to each other.
The area where and intersect and overlap constitutes a display pixel (that is, an original light emitting area) which is a portion where light emitting display is to be performed. The organic EL element S1 of this example constitutes a dot matrix display.

The outer surface of the organic EL structure 30 is covered with a device protective film 70 formed by the ALE method. Here, although the substrate protection film 20 covers the entire one surface of the resin substrate 10, the device protection film 70 is used.
Covers a wider area than the film formation region of the organic layers 51 to 54 on the upper portion of the cathode 60 and the organic layers 51 to 54 on which the cathode 60 is not formed.
1-54 are protected.

By forming a film using a mask made of quartz glass or the like, the film formation region of the device protective film 70 is
It is set so that the connection terminal portions of the anode 40 and the cathode 60 with the external circuit are exposed.

In such an organic EL element S1, for example, one surface of the resin substrate 10 is subjected to oxygen plasma treatment, the substrate protective film 20 is formed by the ALE method, and the IT is performed by the sputtering method.
The anode 40 is formed by patterning the O film,
It is manufactured by forming each organic layer 51 to 54 by a vacuum deposition method, forming a cathode 60 by a deposition method, and forming a device protective film 70 by an ALE method.

Here, the formation of the respective protective films 20 and 70 made of alumina by the ALE method is performed by placing the substrate 10 in a reaction furnace, making the reaction furnace a vacuum atmosphere, and vaporizing TMA (trimethylaluminum) and vaporizing H ₂ O and O are alternately introduced into the reaction furnace by a carrier gas such as N ₂ gas. Details thereof are omitted because a general film forming method that has been conventionally used can be adopted.

At this time, the ALE method for forming the device protective film 70 is based on the organic EL device as an organic electronic device.
Organic material constituting the structure 30, that is, organic layers 51 to 5
It is preferable to perform the film formation at a temperature not higher than the glass transition point of the organic material constituting No. 4. This is because if the film formation temperature is higher than the glass transition point, crystallization of the organic light emitting material will proceed, and there is a possibility that characteristic deterioration such as a decrease in luminous efficiency may occur.

In the present organic EL element S1 as described above, by applying a driving DC voltage having a predetermined duty ratio between the anode 40 and the cathode 60 by an external circuit, a desired display pixel can be obtained. , Holes move from the anode 40, and electrons move from the cathode 60, and these holes and electrons recombine in the light emitting layer 53, and the emission energy thereof causes the fluorescent material (quinacridone compound in this example) to emit light. It is like this. This light emission is extracted from the resin substrate 10 side.

By the way, in general, as compared with a film formed by vacuum deposition, sputtering, or plasma CVD,
The film formed by the atomic layer growth method can realize a film in which the film-forming member has excellent coverage and pinholes are reduced as much as possible. In this embodiment, one surface of the resin substrate 10 (the surface on which the organic electronic device is formed) is covered with the substrate protection film 20 formed by the ALE method.

According to this, since the substrate protective film 20 covering one surface of the resin substrate 10 is excellent in covering property and has almost no pinholes, moisture or gas which permeates the substrate 10 from the other surface of the resin substrate 10. Is blocked by the substrate protective film 20 and does not enter the organic EL structure 30 side.

Therefore, according to this embodiment, the deterioration of the organic EL structure (organic electronic device) 30 due to moisture or gas can be appropriately prevented.

Further, in this embodiment, the surface of the resin substrate 10 on which the substrate protection film 20 is formed is subjected to ultraviolet irradiation or plasma treatment. According to this, the surface of the resin substrate 10 on which the substrate protective film 20 is formed can be roughened at the atomic level, so that the adhesion between the substrate protective film 20 formed by the ALE method and the resin substrate 10 can be improved. .

Further, in this embodiment, the outer surface of the organic EL structure 30, which is an organic electronic device, is also covered with the device protective film 70 formed by the ALE method. The deterioration of 30 can be prevented at a higher level, which is preferable.

(Second Embodiment) FIG. 2 is a diagram showing a schematic sectional structure of an organic EL element S2 as an organic electronic device element according to a second embodiment of the present invention. Mainly, differences from the first embodiment will be described.

In the first embodiment, the substrate protective film 20 is formed on the surface of the resin substrate 10 on which the organic EL structure (organic electronic device) 30 is formed. As shown, the substrate protective film 20 is further formed on the other surface opposite to the one surface.

In this organic EL element S2, after the substrate protective film 20 is formed on one surface and the other surface of the resin substrate 10 by the ALE method, the organic EL structure 3 is formed in the same manner as in the first embodiment.
It can be manufactured by forming 0 and forming the device protective film 70.

As described above, the organic E on the resin substrate 10 is
The substrate protective film 2 is formed on both the one surface on which the L structure (organic electronic device) 30 is formed and the other surface opposite to the one surface.
By forming 0, moisture and gas that try to penetrate into the substrate 10 from the other surface of the resin substrate 10 are also blocked, so that deterioration of the organic electronic device due to moisture and gas can be prevented at a higher level. it can.

(Third Embodiment) FIG. 3 is a diagram showing a schematic sectional structure of an organic EL element S3 as an organic electronic device element according to a third embodiment of the present invention. Mainly, differences from the first embodiment will be described.

As shown in FIG. 3, in this embodiment, the organic EL structure (organic electronic device) in the resin substrate 10 is used.
The substrate protective film 2 is formed on both the one surface on which the 30 is formed and the other surface opposite to the one surface, and on the end surface of the resin substrate 10.
Form 0.

That is, by covering the entire surface of the resin substrate 10 with the substrate protective film 20, not only the other surface of the resin substrate 10 but also water and gas that try to enter the substrate 10 from the end face are blocked. The deterioration of the organic electronic device due to moisture or gas can be prevented at a higher level.

Since the ALE method is a film forming method utilizing a phenomenon of reacting on the surface of the film forming member, a uniform film can be formed along the surface shape of the film forming member. From this, the formation of the substrate protection film 20 on the entire surface of the resin substrate 10 can be performed by one film formation.

(Fourth Embodiment) FIG. 4 is a diagram showing a schematic sectional structure of an organic EL element S4 as an organic electronic device element according to a fourth embodiment of the present invention. Mainly, differences from the first embodiment will be described.

The present embodiment is different from the first embodiment in that the adhesion layer 80 between the resin substrate 10 and the substrate protection film 20 has better adhesion to the resin substrate 10 than the substrate protection film 20.
Is interposed. According to it, the resin substrate 10
It is preferable because the adhesion between the substrate protective film 20 and the substrate protective film 20 can be improved.

As the adhesion layer 80, an inorganic film formed by a sputtering method, a CVD method, a vapor deposition method or the like can be adopted, and more specifically, SiN or Si.
_{O 2, Si, ZnS, ZnS} -SiO 2, SiON, Mg
A film of O, metal, or the like can be used. Further, the film thickness of the adhesion layer 80 can be set in the range of 10 nm to 200 nm.

The organic EL element S4 is, for example, a resin substrate 1
The adhesion layer 80 is formed on one surface of the substrate 0 by the sputtering method, and the substrate protective film 20 is formed on the surface of the adhesion layer 80 by the ALE method.
It can be manufactured by forming the L structure 30 and the device protective film 70.

In particular, when the substrate 10 is a resin substrate as in the present embodiment, the substrate protection film 20 which is an inorganic amorphous film formed by the ALE method has a difference in coefficient of thermal expansion from the resin substrate 10. Therefore, the adhesion may be weakened due to a temperature change or the like.

In this respect, by interposing the adhesion layer 80 between the resin substrate 10 and the substrate protection film 20, such a problem is avoided as much as possible, and the adhesion between the resin substrate 10 and the substrate protection film 20 is secured. Therefore, deterioration of the organic electronic device due to moisture or gas can be prevented more appropriately.

(Fifth Embodiment) FIG. 5 is a diagram showing a schematic sectional structure of an organic EL element S5 as an organic electronic device element according to a fifth embodiment of the present invention. The present embodiment is a combination of the second embodiment and the fourth embodiment.

That is, as shown in FIG. 5, the resin substrate 1
No. 0, the adhesive layer 80 is formed on both one surface on which the organic EL structure (organic electronic device) 30 is formed and the other surface opposite to the one surface, and then the substrate protective film 20 is formed on the surface of the adhesive layer 80. Is assumed to have been formed.

According to this embodiment, the second embodiment and the fourth embodiment
The effect combined with the embodiment can be obtained, the adhesiveness between the resin substrate 10 and the substrate protective film 20 can be secured, and the deterioration of the organic electronic device due to moisture or gas can be more appropriately prevented.

(Sixth Embodiment) FIG. 6 is a diagram showing a schematic sectional structure of an organic EL element S6 as an organic electronic device element according to a sixth embodiment of the present invention. The present embodiment is a combination of the third embodiment and the fifth embodiment.

That is, as shown in FIG. 6, the resin substrate 1
After forming the adhesion layer 80 on both the one surface on which the organic EL structure (organic electronic device) 30 is formed and the other surface opposite to the one surface, the surface of the adhesion layer 80 and the resin substrate 10 are formed. The substrate protection film 20 is formed on the end face.

According to this embodiment, the third embodiment and the fifth embodiment
The effect combined with the embodiment can be obtained, the adhesiveness between the resin substrate 10 and the substrate protective film 20 can be secured, and the deterioration of the organic electronic device due to moisture or gas can be more appropriately prevented.

(Seventh Embodiment) FIGS. 7 and 8 show an organic E as an organic electronic device element according to a seventh embodiment of the present invention.
It is a figure which shows the schematic cross-section structure of L element S7, S8. Mainly, differences from the first embodiment will be described.

In this embodiment, the substrate protective film 20 formed by the ALE method is provided on one of the one surface and the other surface of the resin substrate 10, and the other surface is formed by a method different from the ALE method. The other protective film 90 on the other side is provided.

Here, for the other side protective film 90, an inorganic film formed by a sputtering method, a CVD method, a vapor deposition method or the like can be adopted, and more specifically, SiN or SiO.
_{2, Si, ZnS, ZnS-} SiO 2, SiON, Mg
A film of O, metal, or the like can be used.

In the first example of this embodiment shown in FIG. 7, the substrate protective film 20 is formed on one surface of the resin substrate 10 on which the organic EL structure (organic electronic device) 30 is formed. The other side protective film 90 is formed on the other surface on the opposite side. According to the first example, similarly to the first embodiment, it is possible to appropriately prevent deterioration of the organic electronic device due to moisture or gas.

On the other hand, in the second example of the present embodiment shown in FIG. 8, the other side protective film 90 is formed on one surface of the resin substrate 10 on which the organic EL structure (organic electronic device) 30 is formed. The substrate protection film 20 is provided on the other surface opposite to the one surface.
Is formed.

According to the second example, the moisture and gas that try to enter the substrate 10 from the other surface of the resin substrate 10 are blocked by the substrate protective film 20, so that the organic electronic device by the moisture and gas is used. It is possible to appropriately prevent the deterioration.

These organic EL elements S7 and S of this embodiment
In No. 8, after forming the substrate protective film 20 and the other side protective film 90 on the resin substrate 10, the same process as in the first embodiment is performed.
It can be manufactured by forming the organic EL structure 30 and the device protective film 70.

Further, the present embodiment also has the following effects. In general, a film formed by the ALE method has tensile stress (stress applied in a direction in which the film shrinks). On the other hand, with a film forming method different from the ALE method such as a sputtering method, a CVD method, or a vapor deposition method, a film having a film stress of compressive stress (a stress applied in a direction in which the film extends) can be formed.

Therefore, as in the present embodiment, the substrate protective film 20 having a tensile stress on one surface of the resin substrate 10 and the other protective film 9 having a compressive stress on the other surface.
By forming 0, film stress in different directions can act on the substrate. For example, when the substrate protection film 20 is an alumina film formed by the ALE method and the other side protection film 90 is a SiN film formed by a sputtering method, the above film stress action can be realized.

The film stress in different directions acts on the resin substrate 10, so that the substrate surface on the substrate protective film 20 side becomes concave and the substrate surface on the other side protective film 90 side becomes convex. The substrate 10 is curved. When the resin substrate 10 is curved in this way, the substrate protective film having a concave shape is in a slightly contracted state.

Therefore, it is possible to reduce the tendency of the substrate protective film 20 to shrink due to the tensile stress applied to the substrate protective film 20. As a result, the film stress of the substrate protection film 20 is relaxed, and the substrate protection film 20 is less likely to be cracked or peeled off, which leads to improvement in reliability.

(Other Embodiments) The substrate protective film 20 and the device protective film 70 in each of the above embodiments are made of ALE.
Not only the film formed by the method, but also a laminated film of a film formed by the ALE method and a film formed by a method different from the ALE method may be used.

Specifically, the method different from the ALE method is
A sputtering method, a CVD method, or a vapor deposition method can be adopted. In general, it is difficult to form a too thick film by the ALE method.
The VD method and the vapor deposition method can easily form a thick film as compared with the ALE method.

Therefore, if the substrate protective film 20 and the device protective film 70 have the above-mentioned laminated film structure, the film thickness can be secured by a film formed by a method different from the ALE method. There is an advantage that the strength of the device protective film 70 and the resistance to scratches can be improved.

In the substrate protective film 20 and the device protective film 70 having such a laminated structure, the film formed by the ALE method is selected from Al ₂ O ₃ , TiO ₂ , SiN, ZnO and the like. Can be made up of
The film formed by a method different from the ALE method is SiN, S
_{iO 2, Si, ZnS, ZnS} -SiO 2, SiON, M
It can be made of one selected from gO and the like.

Further, the device protective film 70 may be configured such that the outer surface of the device protective film 70 is covered with a film made of a resin having excellent moisture resistance such as a silicon resin. According to this, the device protective film 70
Since the resin can be protected by the resin film, the resistance to scratches and the like can be further enhanced.

In addition to the organic EL element, each of the above embodiments can be applied to an organic electronic device element in which an organic electronic device made of an organic material is provided on one surface of a substrate having moisture permeability and gas permeability. That is clear.

For example, as the substrate having moisture permeability and gas permeability, not only a resin substrate but also a substrate such as a ceramic substrate or a glass epoxy substrate can be used.

As an organic electronic device, organic E
In addition to L, capacitors and polymer batteries already in practical use, conductive devices such as electrodes, light emitting devices such as organic lasers, photo conversion devices such as photosensors and solar cells, organic transistors and organic integrated devices. Current control devices such as, and active control devices such as optical control devices such as organic optical memories and organic optical switches.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic sectional configuration of an organic EL element according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a schematic sectional configuration of an organic EL element according to a second embodiment of the invention.

FIG. 3 is a diagram showing a schematic sectional configuration of an organic EL element according to a third embodiment of the invention.

FIG. 4 is a diagram showing a schematic sectional configuration of an organic EL element according to a fourth embodiment of the invention.

FIG. 5 is a diagram showing a schematic sectional configuration of an organic EL device according to a fifth embodiment of the invention.

FIG. 6 is a diagram showing a schematic sectional configuration of an organic EL element according to a sixth embodiment of the present invention.

FIG. 7 is a diagram showing a schematic sectional configuration of a first example of an organic EL element according to a seventh embodiment of the present invention.

FIG. 8 is a diagram showing a schematic cross-sectional configuration of a second example of the organic EL element according to the seventh embodiment of the present invention.

[Explanation of symbols]

10 ... Resin substrate, 20 ... Substrate protective film, 30 ... Organic EL structure, 40 ... Anode, 51 ... Hole injection layer, 52 ... Hole transport layer, 53 ... Light emitting layer, 54 ... Electron transport layer, 60 ... Cathode, 70 ... Device protective film, 80 ... Adhesive layer, 90 ... Other side protective film.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 31/04 H05B 33/04 51/00 33/10 H05B 33/04 33/14 A 33/10 H01L 29 / 28 33/14 31/04 Z (72) Inventor Toshiki Ito 1-1, Showa-cho, Kariya city, Aichi Stock company Denso (72) Inventor Kunio Akito Watanabe, Nagakute-cho, Aichi-gun, Aichi Prefecture 41 Address 1 Toyota Central Research Laboratory F-term (reference) 3K007 AB11 AB12 AB13 BB02 CA05 DB03 FA01 FA02 4K029 BA35 BA41 BA43 BA46 BA51 BA58 BA64 BD00 CA01 CA05 4K030 BA01 BA21 BA29 BA35 BA40 BA42 BA44 BA50 BA61 5F051 AA12 BA18 CB12 CB12 CB12 CB12 CB12 CB15 CB30 FA04 FA06 GA03 GA06

Claims (15)

[Claims] 1. A substrate (10) having moisture permeability and gas permeability, and an organic electronic device (30) formed on one surface of the substrate.
An organic electronic device element comprising: a substrate protective film (20), wherein at least one of the one surface of the substrate on which the organic electronic device is formed and the other surface opposite to the one surface is formed by an atomic layer growth method.
An organic electronic device element characterized by being covered with. 2. The substrate protection film (20) is a laminated film of a film formed by an atomic layer growth method and a film formed by a method different from the atomic layer growth method. The organic electronic device element according to claim 1. 3. The organic electronic device element according to claim 2, wherein the method different from the atomic layer growth method is a sputtering method. 4. A method different from the atomic layer growth method is C
The organic electronic device element according to claim 2, which is a VD method. 5. The organic electronic device element according to claim 2, wherein the method different from the atomic layer growth method is a vapor deposition method. 6. A film formed by the atomic layer growth method
Is Al₂O₃, TiO ₂, SiN, and ZnO
Selected type, The film formed by a method different from the atomic layer growth method is S
iN, SiO₂, Si, ZnS, ZnS-SiO₂, Si
It is characterized by being composed of one kind selected from ON and MgO.
The organic electron according to any one of claims 2 to 5.
Device element. 7. The organic electronic device element according to claim 1, wherein the substrate (10) is a resin substrate. 8. The substrate (10) and the substrate protective film (2)
0), an adhesive layer (80) having a better adhesiveness to the substrate than the substrate protective film is interposed, and the organic substance according to any one of claims 1 to 7. Electronic device element. 9. The substrate protective film (20) formed by the atomic layer growth method is provided on either one surface or the other surface of the substrate (10), and on the other side, the atomic layer growth method is used. The organic electronic device element according to claim 1, further comprising a protective film (90) on the other side formed by a different method. 10. The surface of the substrate (10) on which the substrate protective film (20) is formed is subjected to ultraviolet irradiation or plasma treatment, according to any one of claims 1 to 9. An organic electronic device element described in 1. 11. The outer surface of the organic electronic device (30) is covered with a device protective film (70) formed by an atomic layer growth method, according to claim 1. An organic electronic device element described in 1. 12. The device protective film (70) is a laminated film of a film formed by an atomic layer growth method and a film formed by a method different from the atomic layer growth method. The organic electronic device element according to claim 11. 13. The organic electronic device element according to claim 11, wherein an outer surface of the device protective film (70) is covered with a film made of resin. 14. An atomic layer deposition method for forming the device protective film (70) is applied to the organic electronic device (3).
The organic electronic device element according to any one of claims 11 to 13, which is performed at a film forming temperature not higher than the glass transition point of the organic material constituting (0). 15. The organic electronic device (30) is composed of a structure in which organic light emitting materials (51 to 54) are arranged between a pair of electrodes (40, 60) facing each other. The organic electronic device element according to any one of claims 1 to 14.