JP2003282779A - Multilayer wiring board - Google Patents

Multilayer wiring board

Info

Publication number
JP2003282779A
JP2003282779A JP2002086809A JP2002086809A JP2003282779A JP 2003282779 A JP2003282779 A JP 2003282779A JP 2002086809 A JP2002086809 A JP 2002086809A JP 2002086809 A JP2002086809 A JP 2002086809A JP 2003282779 A JP2003282779 A JP 2003282779A
Authority
JP
Japan
Prior art keywords
conductor
layer
multilayer wiring
wiring board
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002086809A
Other languages
Japanese (ja)
Inventor
Takeshi Kubota
武志 窪田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2002086809A priority Critical patent/JP2003282779A/en
Publication of JP2003282779A publication Critical patent/JP2003282779A/en
Pending legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To provide a multilayer wiring board composed of a board and an insulating film layer formed on the board, wherein a wiring conductor layer and a through conductor are prevented from being separated from each other in a heating process carried out when a chip component is mounted or in an environmental resistance test such as a thermal cycle test. <P>SOLUTION: A plurality of insulating layers of organic resin and wiring conductor layers 3 are laminated in multilayer and bonded together on a board 1, and the upper wiring conductor layers 3 and the lower wiring conductor layers 3 are electrically connected together by the through conductors 7 each provided in a through-hole 6 bored in the insulating layer located between the wiring conductor layers 3 for the formation of the multilayer wiring board. At least one of the through conductors 7 located on the wiring conductor 3 on the peripheral surface of the board 1 is made to function as a large through conductor 8 larger in cross sectional area than the other through conductors 7. By this setup, stress imposed on the other through conductors 7 is relaxed by the large through conductor 8, so that the wiring conductor layer 3 is hardly separated from the bottom of the through conductor 7. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は多層配線基板に関
し、より詳細には混成集積回路装置や半導体素子を収容
する半導体素子収納用パッケージ等に使用される多層配
線基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board, and more particularly to a multilayer wiring board used for a hybrid integrated circuit device and a semiconductor element housing package for housing semiconductor elements.

【0002】[0002]

【従来の技術】従来、混成集積回路装置や半導体素子収
納用パッケージ等に使用される多層配線基板としては、
配線導体を高密度に形成することを目的として、基板上
に薄膜の絶縁層と配線導体層とから成る多層配線部を形
成した多層配線基板が採用されていた。
2. Description of the Related Art Conventionally, as a multilayer wiring board used for a hybrid integrated circuit device, a package for accommodating semiconductor elements, etc.
For the purpose of forming the wiring conductors at a high density, a multilayer wiring board in which a multilayer wiring portion including a thin insulating layer and a wiring conductor layer is formed on the substrate has been adopted.

【0003】かかる多層配線基板は、酸化アルミニウム
質焼結体等から成る基板の上面に、スピンコート法等に
よって形成されるポリイミド樹脂等から成る薄膜の絶縁
層と、銅やアルミニウム等の金属から成り、めっき法や
蒸着法等の薄膜形成技術およびフォトリソグラフィー技
術を採用することによって形成される配線導体層とを交
互に多層に積層させた構造を有している。
Such a multilayer wiring board comprises a thin film insulating layer made of a polyimide resin or the like formed by a spin coating method or the like on the upper surface of a substrate made of an aluminum oxide sintered body or the like, and a metal such as copper or aluminum. It has a structure in which a wiring conductor layer formed by adopting a thin film forming technique such as a plating method or a vapor deposition method and a photolithography technique are alternately laminated in multiple layers.

【0004】しかしながら、スピンコート法によってポ
リイミド樹脂から成る絶縁層を形成した場合、所望の厚
みに絶縁層を形成するには多数回に分けてポリイミド樹
脂の前駆体を塗布する必要があり、さらにその後にポリ
イミド樹脂の前駆体をポリイミド化させるキュア工程が
必要となるため、製造工程が長くなるという問題点があ
った。
However, when an insulating layer made of a polyimide resin is formed by a spin coating method, it is necessary to apply the polyimide resin precursor in a number of times in order to form the insulating layer with a desired thickness. In addition, there is a problem that the manufacturing process becomes long because a curing process for polyimidizing the precursor of the polyimide resin is required.

【0005】そこで、ポリイミド樹脂等から成る複数の
絶縁フィルム層を間にビスマレイミドトリアジン樹脂等
から成る絶縁性接着剤層を介して積層して成る絶縁層を
用いる多層配線基板が採用されてきている。
Therefore, a multilayer wiring board using an insulating layer formed by laminating a plurality of insulating film layers made of polyimide resin or the like with an insulating adhesive layer made of bismaleimide triazine resin or the like interposed therebetween has been adopted. .

【0006】かかる多層配線基板における絶縁層の形成
は、まず絶縁フィルムに絶縁性接着剤をドクターブレー
ド法等を用いて塗布し乾燥させたものを準備し、この絶
縁フィルム層を基板や下層の絶縁フィルム層の上面に間
に絶縁性接着剤層が配されるように積み重ね、これを加
熱プレス装置を用いて加熱加圧し接着することにより行
なわれる。
In order to form an insulating layer in such a multilayer wiring board, first, an insulating film is coated with an insulating adhesive by a doctor blade method or the like and dried to prepare an insulating film layer, which is used to insulate a substrate or a lower layer. It is carried out by stacking the insulating adhesive layer on the upper surface of the film layer so as to be disposed between them, and heating and pressurizing this by using a heating press device to bond them.

【0007】また、上下に位置する配線導体層間の電気
的接続は、レーザやドライエッチング等の手法により絶
縁フィルム層および絶縁性接着剤層に貫通孔を形成し、
その後、貫通孔の内壁に真空成膜法やめっき法により貫
通導体を形成することにより行なわれている。
For electrical connection between the wiring conductor layers located above and below, through holes are formed in the insulating film layer and the insulating adhesive layer by a method such as laser or dry etching,
After that, a through conductor is formed on the inner wall of the through hole by a vacuum film forming method or a plating method.

【0008】これらは以下の(1)〜(5)の工程を含
む製造方法で形成されている。 (1)絶縁フィルム層および絶縁性接着剤層にレーザや
プラズマにより方形や円形に開口した貫通孔を形成し、
その内部を過マンガン酸カリウム溶液等の粗化液で粗化
する。 (2)この粗化した面にめっき触媒としてPd等を付与
し、その後、無電解めっきにより下地導体膜を形成す
る。 (3)次に、下地導体膜の上にフォトレジストを塗布す
るとともにこれに露光・現像を施すことによって、下地
導体層のうち上層の主導体層を形成する部分に所定形状
の窓部を形成する。 (4)次に、フォトレジストの窓部に露出させた下地導
体層を電極として電解めっき皮膜を3〜10μmの厚みに
形成する。これによって上層の主導体層の部分に相当す
る露出した下地導体層上にめっき皮膜が形成され、その
他の部分はフォトレジストに覆われているためにめっき
皮膜が形成されず、上層の配線導体層および貫通導体に
相当する部分にのみ主導体層が形成される。 (5)このようにして所定の厚さの主導体層を形成した
後、フォトレジストを剥離除去し、次に、主導体層をエ
ッチングレジストとして先に電解めっき用電極として使
用した下地導体層の一部をエッチングすることによっ
て、上層の配線導体層および貫通導体が形成される。
These are formed by a manufacturing method including the following steps (1) to (5). (1) Form a rectangular or circular through hole in the insulating film layer and the insulating adhesive layer by laser or plasma,
The inside is roughened with a roughening liquid such as a potassium permanganate solution. (2) Pd or the like is applied as a plating catalyst to the roughened surface, and then a base conductor film is formed by electroless plating. (3) Next, a photoresist is applied on the underlying conductor film, and the photoresist is exposed and developed to form a window portion having a predetermined shape in a portion of the underlying conductor layer where the upper main conductor layer is formed. To do. (4) Next, an electrolytic plating film having a thickness of 3 to 10 μm is formed using the underlying conductor layer exposed in the window portion of the photoresist as an electrode. As a result, a plating film is formed on the exposed underlying conductor layer corresponding to the portion of the upper main conductor layer, and the plating film is not formed on the other portions because it is covered with photoresist. The main conductor layer is formed only on the portion corresponding to the through conductor. (5) After the main conductor layer having a predetermined thickness is formed in this manner, the photoresist is peeled and removed, and then the main conductor layer is used as an etching resist for the base conductor layer previously used as the electrode for electrolytic plating. By etching a part, the upper wiring conductor layer and the through conductor are formed.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、上記の
ような絶縁フィルム層を間に絶縁性接着剤層を介して加
熱加圧し接着する多層配線基板においては、基板,貫通
導体,絶縁フィルム層,絶縁性接着剤層のそれぞれに材
質の違いにより熱膨張係数に差があるため、多層配線基
板にチップ部品等を実装する際の加熱工程や温度サイク
ル試験等の耐環境試験の加熱・冷却により部分的に応力
が集中するようになる。
However, in a multilayer wiring board in which the insulating film layers as described above are heated and pressed through an insulating adhesive layer to bond them, the substrate, the through conductor, the insulating film layer, the insulating The coefficient of thermal expansion differs depending on the material of each adhesive layer, so it may be partially heated by the heating process when mounting chip parts etc. on the multilayer wiring board or the heating / cooling of environment resistance test such as temperature cycle test. The stress is concentrated on.

【0010】例えば、基板,絶縁性接着剤層,絶縁フィ
ルム層の熱膨張差による応力はそれぞれの界面、とりわ
け材質の大きく異なる基板と絶縁性接着剤層との界面
で、さらに基板の外周部に近い部分に、より大きな応力
が生じることとなる。そのため、これらの応力の集中に
より、特に基板の外周部に近い基板表面の直上にある配
線導体層の上面と貫通孔とが接する部分を基点として、
配線導体層と貫通導体との界面において、その界面の接
着力が低い場合に界面方向にクラックが生じ、配線導体
層と貫通導体との剥離が発生するという問題点があっ
た。
For example, the stress due to the difference in thermal expansion between the substrate, the insulating adhesive layer, and the insulating film layer is applied to the respective interfaces, in particular, the interface between the substrate and the insulating adhesive layer, which differ greatly in material, and further to the outer peripheral portion of the substrate. Greater stress will be generated in the vicinity. Therefore, due to the concentration of these stresses, the point where the through hole is in contact with the upper surface of the wiring conductor layer immediately above the substrate surface, particularly near the outer peripheral portion of the substrate,
At the interface between the wiring conductor layer and the through conductor, when the adhesive force at the interface is low, a crack occurs in the interface direction, and there is a problem that the wiring conductor layer and the through conductor are separated.

【0011】本発明は上記従来技術における問題点に鑑
みてなされたものであり、その目的は、チップ部品等を
実装する際の加熱工程や温度サイクル試験等の耐環境試
験において熱応力により発生する配線導体層と貫通導体
との剥離を抑制した、電気的接続信頼性に優れた多層配
線基板を提供することにある。
The present invention has been made in view of the above problems in the prior art, and its object is to be generated by thermal stress in a heating process when mounting a chip component or the like, or in an environmental resistance test such as a temperature cycle test. It is an object of the present invention to provide a multilayer wiring board which is excellent in electrical connection reliability and which suppresses peeling between a wiring conductor layer and a through conductor.

【0012】[0012]

【課題を解決するための手段】本発明の多層配線基板
は、基板上に有機樹脂から成る複数の絶縁フィルム層と
配線導体層とを前記絶縁フィルム層間に絶縁性接着剤層
を介して多層に積層接着するとともに、上下に位置する
前記配線導体層同士をその間の前記絶縁フィルム層およ
び前記絶縁性接着剤層に設けた貫通孔に貫通導体を配し
て電気的に接続して成る多層配線基板であって、前記貫
通導体のうち前記基板の外周部において前記基板の表面
に配設された前記配線導体層上に配されたものの少なく
とも一部は、他の貫通導体よりも横断面積が大きい大径
貫通導体とされていることを特徴とするものである。
A multilayer wiring board according to the present invention has a structure in which a plurality of insulating film layers made of organic resin and a wiring conductor layer are formed on the substrate in multiple layers with an insulating adhesive layer interposed between the insulating film layers. A multilayer wiring board which is laminated and adhered, and the wiring conductor layers located above and below are electrically connected by arranging through conductors in through holes provided in the insulating film layer and the insulating adhesive layer therebetween. Of the through conductors, at least a part of the through conductors arranged on the wiring conductor layer disposed on the surface of the substrate in the outer peripheral portion of the substrate has a larger cross-sectional area than other through conductors. It is characterized by being a through conductor.

【0013】また、本発明の多層配線基板は、上記構成
において、前記大径貫通導体が前記絶縁フィルム層およ
び前記絶縁性接着剤層の前記基板側の最下層から上層の
前記絶縁フィルム層および前記絶縁性接着剤層にかけて
上下に連続して配されていることを特徴とするものであ
る。
Further, in the multilayer wiring board of the present invention, in the above-mentioned constitution, the large-diameter through conductor has the insulating film layer and the insulating adhesive layer from the lowermost layer to the upper layer of the insulating adhesive layer and the insulating adhesive layer. It is characterized in that the insulating adhesive layer is continuously arranged vertically.

【0014】また、本発明の多層配線基板は、上記構成
において、前記大径貫通導体の前記上層に配された部分
は、前記最下層に配された部分より横断面積が小さいこ
とを特徴とするものである。
Further, the multilayer wiring board of the present invention is characterized in that, in the above structure, a portion of the large-diameter through conductor arranged in the upper layer has a smaller cross-sectional area than a portion arranged in the lowermost layer. It is a thing.

【0015】また、本発明の多層配線基板は、上記各構
成において、前記大径貫通導体の底面が前記配線導体層
とともに前記基板に埋入していることを特徴とするもの
である。
Further, the multilayer wiring board of the present invention is characterized in that, in each of the above-mentioned constitutions, the bottom surface of the large-diameter through conductor is embedded in the board together with the wiring conductor layer.

【0016】本発明の多層配線基板によれば、貫通導体
のうち基板の外周部において基板の表面に配設された配
線導体層上に配されたものの少なくとも一部は、他の貫
通導体よりも横断面積が大きい大径貫通導体とされてい
ることから、チップ部品等を実装する際の加熱工程や温
度サイクル試験等の耐環境試験において発生する熱応力
を基板の外周部にある大径貫通導体が集中して支えるた
め、他の貫通導体には破断するような応力がかからなく
なる。このため、配線導体層と貫通導体との界面方向に
クラックを生じることはなく、配線導体層と貫通導体と
の剥離がなくなる。これにより、上下に位置する配線導
体層間の導通不良の発生がなくなり、電気的接続信頼性
の優れた多層配線基板となる。
According to the multilayer wiring board of the present invention, at least a part of the through conductors arranged on the wiring conductor layer provided on the surface of the substrate at the outer peripheral portion of the substrate is more than that of the other through conductors. Since it is a large-diameter through-conductor with a large cross-sectional area, the large-diameter through-conductor on the outer peripheral portion of the substrate is subject to thermal stress generated in environment resistance tests such as heating processes and temperature cycle tests when mounting chip components, etc. Is concentrated and supported, so that no stress that would break the other through conductors is applied. For this reason, no crack is generated in the interface direction between the wiring conductor layer and the through conductor, and peeling between the wiring conductor layer and the through conductor is eliminated. As a result, the occurrence of conduction failure between the upper and lower wiring conductor layers is eliminated, and the multilayer wiring board has excellent electrical connection reliability.

【0017】また、本発明の多層配線基板によれば、大
径貫通導体が絶縁フィルム層および絶縁性接着剤層の基
板側の最下層から上層の絶縁フィルム層および絶縁性接
着剤層にかけて上下に連続して配されているときには、
チップ部品等を実装する際の加熱工程や温度サイクル試
験等の耐環境試験において発生する各層の熱応力に対し
ても各層の基板の外周部にある大径貫通導体がこの応力
を集中して支えるため、各層の他の貫通導体には破断す
るような応力がかからなくなる。このため、各層の配線
導体層と貫通導体との界面方向にクラックを生じること
はなく、配線導体層と貫通導体との剥離がなくなる。こ
れにより、上下に位置する配線導体層間の導通不良の発
生がなくなり、より電気的接続信頼性の優れた多層配線
基板となる。
Further, according to the multilayer wiring board of the present invention, the large-diameter through conductors are vertically arranged from the lowermost layer of the insulating film layer and the insulating adhesive layer on the substrate side to the upper insulating film layer and the insulating adhesive layer. When they are arranged consecutively,
The large-diameter through conductors on the outer periphery of the substrate of each layer concentrate and support the thermal stress of each layer that occurs in the environmental resistance test such as the heating process and temperature cycle test when mounting chip parts. Therefore, the other through conductor of each layer is not subjected to a stress such as breaking. Therefore, no crack is generated in the interface direction between each wiring conductor layer and the through conductor, and peeling between the wiring conductor layer and the through conductor is eliminated. As a result, the occurrence of conduction failure between the upper and lower wiring conductor layers is eliminated, and the multilayer wiring board has more excellent electrical connection reliability.

【0018】さらに、本発明の多層配線基板によれば、
大径貫通導体の上層に配された部分が、最下層に配され
た部分より横断面積が小さいときには、この上層に配さ
れた大径貫通導体を基板側より上層に向かうにつれて小
さくなる各層の応力に見合った横断面積で形成しておく
ことにより、上下に連続して同じ横断面積で大径貫通導
体を配した場合よりも大径貫通導体の各層における占有
面積を小さくすることができる。このため、配線導体層
の高密度化にも対応することができるようになる。これ
により、上下に位置する配線導体層間の導通不良の発生
がなくなるとともに、高密度に配線導体層を形成するこ
とができる電気的接続信頼性の優れた多層配線基板とな
る。
Further, according to the multilayer wiring board of the present invention,
When the area of the large-diameter through conductor arranged in the upper layer has a smaller cross-sectional area than the area of the lowermost layer, the stress of each layer becomes smaller as the large-diameter through conductor arranged in this upper layer goes from the substrate side to the upper layer. By forming the large-diameter through conductors in a cross-sectional area corresponding to the above, it is possible to reduce the occupied area in each layer of the large-diameter through-conductors as compared with the case where the large-diameter through conductors are continuously arranged vertically with the same cross-sectional area. Therefore, it becomes possible to cope with the high density of the wiring conductor layer. As a result, a multi-layer wiring board with excellent electrical connection reliability, in which the occurrence of conduction failure between the wiring conductor layers located above and below can be eliminated and the wiring conductor layers can be formed at high density.

【0019】さらに、本発明の多層配線基板によれば、
大径貫通導体の底面が配線導体層とともに基板に埋入し
ているときには、チップ部品等を実装する際の加熱工程
や温度サイクル試験等の耐環境試験において発生する熱
応力が基板の外周部にある大径貫通導体に集中した際に
も、配線導体層と貫通導体との界面方向に集中する応力
を大径貫通導体の底面から側壁方向に分散することがで
きるため、配線導体層と大径貫通導体との接着強度が強
固になり、他の貫通導体には破断するような応力がより
確実にかからなくなる。このため、配線導体層と貫通導
体との界面方向にクラックを生じることはなく、配線導
体層と貫通導体との剥離がなくなる。これにより、上下
に位置する配線導体層間の導通不良の発生がなくなり、
より一層電気的接続信頼性の優れた多層配線基板とな
る。
Further, according to the multilayer wiring board of the present invention,
When the bottom surface of the large-diameter through conductor is embedded in the board together with the wiring conductor layer, the thermal stress generated in the environment resistance test such as the heating process or the temperature cycle test when mounting the chip parts etc. Even when concentrated on a large-diameter through conductor, the stress concentrated on the interface direction between the wiring conductor layer and the through-conductor can be dispersed from the bottom surface of the large-diameter through conductor to the sidewall direction. The adhesive strength with the through conductor becomes stronger, and the stress that causes the other through conductor to break is more reliably not applied. For this reason, no crack is generated in the interface direction between the wiring conductor layer and the through conductor, and peeling between the wiring conductor layer and the through conductor is eliminated. This eliminates the occurrence of conduction failure between the upper and lower wiring conductor layers,
The multilayer wiring board has even more excellent electrical connection reliability.

【0020】[0020]

【発明の実施の形態】以下、図面に基づいて本発明の多
層配線基板を詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The multilayer wiring board of the present invention will be described in detail below with reference to the drawings.

【0021】図1〜図3はそれぞれ本発明の多層配線基
板の実施の形態の例を示す断面図であり、図4は本発明
の多層配線基板の実施の形態の一例における基板側の最
下層の絶縁フィルム層を示す上面図である。これらの図
において、1は基板、2は多層配線部、3は配線導体
層、4は絶縁フィルム層、5は絶縁性接着剤層、6は貫
通孔、7は貫通導体、8は大径貫通導体である。
1 to 3 are cross-sectional views showing an example of an embodiment of a multilayer wiring board of the present invention, and FIG. 4 is a bottom layer on the substrate side in an example of an embodiment of a multilayer wiring board of the present invention. 3 is a top view showing the insulating film layer of FIG. In these figures, 1 is a substrate, 2 is a multilayer wiring part, 3 is a wiring conductor layer, 4 is an insulating film layer, 5 is an insulating adhesive layer, 6 is a through hole, 7 is a through conductor, and 8 is a large-diameter through hole. It is a conductor.

【0022】基板1は、その上面に複数の絶縁フィルム
層4を間に絶縁性接着剤層5を介して積層した絶縁層と
配線導体層3とを多層に積層した多層配線部2が配設さ
れており、この多層配線部2を支持する支持部材として
機能する。
The substrate 1 is provided with a multilayer wiring section 2 in which a plurality of insulating film layers 4 are laminated on the upper surface of the substrate 1 with an insulating adhesive layer 5 interposed therebetween and a wiring conductor layer 3 are laminated in multiple layers. And functions as a support member that supports the multilayer wiring section 2.

【0023】基板1は、酸化アルミニウム質焼結体,ム
ライト質焼結体等の酸化物系セラミックス、あるいは表
面に酸化物膜を有する窒化アルミニウム質焼結体,炭化
珪素質焼結体,窒化珪素質焼結体等の非酸化物系セラミ
ックス、さらにはガラス繊維から成る基材にエポキシ樹
脂を含浸させたガラスエポキシ樹脂やガラス繊維から成
る基材にビスマレイミドトリアジン樹脂を含浸させたも
の等の電気絶縁材料で形成されている。
The substrate 1 is an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or an aluminum nitride sintered body having an oxide film on its surface, a silicon carbide sintered body, or silicon nitride. Electricity of non-oxide ceramics such as high quality sintered body, glass epoxy resin impregnated with glass fiber base material, glass fiber base material impregnated with bismaleimide triazine resin, etc. It is made of an insulating material.

【0024】例えば、酸化アルミニウム質焼結体で形成
されている場合には、アルミナ,シリカ,カルシア,マ
グネシア等の原料粉末に適当な有機溶剤,溶媒を添加混
合して泥漿状となすとともにこれを従来周知のドクター
ブレード法やカレンダーロール法を採用することによっ
てセラミックグリーンシート(セラミック生シート)を
形成し、しかる後、このセラミックグリーンシートに適
当な打ち抜き加工を施し、所定形状となすとともに高温
(約1600℃)で焼成することによって、あるいはアルミ
ナ等の原料粉末に適当な有機溶剤,溶媒を添加混合して
原料粉末を調整するとともにこの原料粉末をプレス成形
機によって所定形状に成形し、最後にこの成形体を高温
(約1600℃)で焼成することによって製作される。
For example, when it is formed of an aluminum oxide sintered body, an appropriate organic solvent or solvent is added to and mixed with a raw material powder of alumina, silica, calcia, magnesia, etc. to form a slurry. A ceramic green sheet (ceramic green sheet) is formed by adopting the conventionally well-known doctor blade method or calendar roll method, and then this ceramic green sheet is subjected to appropriate punching processing to form a predetermined shape and high temperature (about The raw material powder is prepared by firing at 1600 ° C) or by adding and mixing an appropriate organic solvent or solvent to the raw material powder such as alumina, and the raw material powder is molded into a predetermined shape by a press molding machine. It is manufactured by firing a compact at a high temperature (about 1600 ° C).

【0025】また、ガラスエポキシ樹脂から成る場合
は、例えばガラス繊維から成る基材にエポキシ樹脂の前
駆体を含浸させ、このエポキシ樹脂前駆体を所定の温度
で熱硬化させることによって製作される。
When it is made of glass epoxy resin, it is manufactured by impregnating a base material made of glass fiber, for example, with a precursor of epoxy resin and thermally curing the epoxy resin precursor at a predetermined temperature.

【0026】基板1には、その上面に複数の絶縁フィル
ム層4間に絶縁性接着剤層5を介して積層した絶縁層と
配線導体層3とを多層に積層した多層配線部2が配設さ
れている。この多層配線部2を構成する絶縁フィルム層
4は上下に位置する配線導体層3を電気的に絶縁し、配
線導体層3は電気信号を伝達するための伝達路として機
能する。
On the upper surface of the substrate 1, there is provided a multi-layer wiring section 2 in which a plurality of insulating film layers 4 are laminated with an insulating adhesive layer 5 interposed therebetween and a wiring conductor layer 3 are laminated in multiple layers. Has been done. The insulating film layer 4 forming the multilayer wiring portion 2 electrically insulates the wiring conductor layers 3 located above and below, and the wiring conductor layer 3 functions as a transmission path for transmitting an electric signal.

【0027】多層配線部2の絶縁層は絶縁フィルム層4
と絶縁性接着剤層5とから構成され、絶縁フィルム層4
はポリイミド樹脂,ポリフェニレンサルファイド樹脂,
全芳香族ポリエステル樹脂,フッ素樹脂等から成る。ま
た、絶縁性接着剤層5はポリアミドイミド樹脂,ポリイ
ミドシロキサン樹脂,ビスマレイミドトリアジン樹脂,
エポキシ樹脂等から成る。
The insulating layer of the multilayer wiring part 2 is an insulating film layer 4
And an insulating adhesive layer 5, and an insulating film layer 4
Is polyimide resin, polyphenylene sulfide resin,
Consists of wholly aromatic polyester resin, fluororesin, etc. The insulating adhesive layer 5 is made of polyamide-imide resin, polyimide-siloxane resin, bismaleimide-triazine resin,
It is made of epoxy resin.

【0028】絶縁層は、まず12.5〜50μm程度の絶縁フ
ィルムに絶縁性接着剤をドクターブレード法等を用いて
乾燥厚みで5〜20μm程度に塗布し乾燥させたものを準
備し、この絶縁フィルムを基板1や下層の絶縁層の上面
に間に絶縁性接着剤が配されるように積み重ね、これを
加熱プレス装置を用いて加熱加圧し接着することによっ
て形成される。
The insulating layer is prepared by first coating an insulating film having a thickness of about 12.5 to 50 μm with an insulating adhesive to a dry thickness of about 5 to 20 μm by using a doctor blade method or the like and drying the insulating film. It is formed by stacking the insulating adhesive on the upper surfaces of the substrate 1 and the lower insulating layer so that the insulating adhesive is disposed between them, and heating and pressurizing the insulating adhesive using a heating press device to bond them.

【0029】中でも、貫通導体7を銅または銅合金で形
成し、絶縁フィルム層4をポリイミド樹脂とし、絶縁性
接着剤層5をポリイミドシロキサン樹脂あるいはシロキ
サン変性ポリアミドイミド樹脂とする組合せにおいて
は、ポリイミドシロキサン樹脂あるいはシロキサン変性
ポリアミドイミド樹脂が絶縁フィルム層4との接着性も
良好で、かつ耐熱性が高く、また熱膨張係数が銅と比較
的近いため、貫通導体7と絶縁層との熱膨張差も小さく
なる。
Among them, in the combination in which the through conductor 7 is made of copper or copper alloy, the insulating film layer 4 is made of polyimide resin, and the insulating adhesive layer 5 is made of polyimide siloxane resin or siloxane modified polyamide imide resin, polyimide siloxane is used. The resin or the siloxane-modified polyamide-imide resin has good adhesiveness with the insulating film layer 4, has high heat resistance, and has a thermal expansion coefficient relatively close to that of copper, so that the thermal expansion difference between the through conductor 7 and the insulating layer is also high. Get smaller.

【0030】絶縁層には所定位置に絶縁フィルム層4お
よび絶縁性接着剤層5を貫通する貫通孔6が形成されて
おり、この貫通孔6内には貫通導体7が被着形成される
ことにより絶縁フィルム層4を挟んで上下に位置する配
線導体層3の各々を電気的に接続する接続路が形成され
る。
A through hole 6 penetrating the insulating film layer 4 and the insulating adhesive layer 5 is formed at a predetermined position in the insulating layer, and a through conductor 7 is formed in the through hole 6 by adhesion. Thus, a connection path for electrically connecting each of the wiring conductor layers 3 located above and below the insulating film layer 4 is formed.

【0031】貫通孔6は、例えばレーザを使い絶縁フィ
ルム層4および絶縁性接着剤層5の一部を除去すること
により形成される。特に、貫通孔6の開口径が小さな場
合は、貫通孔6の内壁面の角度をコントロールすること
が容易で貫通孔6の内壁面が滑らかに加工される紫外線
レーザで形成することが望ましい。
The through holes 6 are formed by removing a part of the insulating film layer 4 and the insulating adhesive layer 5 by using, for example, a laser. In particular, when the opening diameter of the through hole 6 is small, it is desirable to form the inner wall surface of the through hole 6 by an ultraviolet laser that can easily control the angle of the inner wall surface of the through hole 6 and can be processed smoothly.

【0032】各絶縁フィルム層4の上面に配設される配
線導体層3および貫通孔6内に配される貫通導体7なら
びに大径貫通導体8は、銅,金,アルミニウム,ニッケ
ル,クロム,モリブデン,チタンおよびそれらの合金等
の金属材料をスパッタリング法,蒸着法,めっき法等の
薄膜形成技術を採用することによって形成することがで
きる。
The wiring conductor layer 3 disposed on the upper surface of each insulating film layer 4 and the through conductor 7 and the large diameter through conductor 8 disposed in the through hole 6 are made of copper, gold, aluminum, nickel, chromium, molybdenum. , Titanium and alloys thereof can be formed by adopting thin film forming techniques such as sputtering, vapor deposition, and plating.

【0033】貫通導体7は配線導体層3と別々に形成し
てもよいが、これらは同時に形成した方が工程数を少な
くできるとともに両者の電気的な接続信頼性の点でも良
好である。また、配線導体層3と貫通導体7とをめっき
法で一体形成する場合には、それぞれに所望の厚みのめ
っき膜を調整して形成することができるように、主とし
て電解めっき法を用いて形成しておくのがよい。
The through conductor 7 may be formed separately from the wiring conductor layer 3, but if they are formed at the same time, the number of steps can be reduced and the electrical connection reliability between the two is good. When the wiring conductor layer 3 and the penetrating conductor 7 are integrally formed by a plating method, they are formed mainly by the electrolytic plating method so that a plating film having a desired thickness can be adjusted and formed for each. It's good to do.

【0034】このとき、図1および図4に示すように、
貫通導体7のうち基板1の外周部において基板1の表面
に配設された配線導体層3上に配されたものの少なくと
も一部は、他の貫通導体7よりも横断面積が大きい大径
貫通導体8にしておくのがよい。大径貫通導体8は基板
1の外周部に配しておくが、例えば、基板1が四角形の
場合は、少なくともその四隅のそれぞれに1つずつ配し
ておくと本発明の効果を確実に、かつ効率よく得ること
ができる。また、四辺に沿って複数個の大径貫通導体8
を他の貫通導体7を取り囲むように配しておいてもよ
い。さらに、基板1が円形の場合は、その内接する正多
角形の各頂点の角部のそれぞれに1つずつ配しておくと
よい。
At this time, as shown in FIGS. 1 and 4,
At least a part of the through conductors 7 arranged on the wiring conductor layer 3 provided on the surface of the substrate 1 in the outer peripheral portion of the substrate 1 has a large cross-sectional area larger than other through conductors 7. It is better to set it to 8. The large-diameter through conductors 8 are arranged on the outer peripheral portion of the substrate 1. For example, when the substrate 1 is a quadrangle, disposing one at each of the four corners ensures the effect of the present invention. And it can be obtained efficiently. In addition, a plurality of large-diameter through conductors 8 are provided along the four sides.
May be arranged so as to surround the other through conductor 7. Further, when the substrate 1 has a circular shape, it is advisable to dispose one at each of the corners of the apexes of the regular polygon inscribed therein.

【0035】また、大径貫通導体8は、図2に示すよう
に、絶縁フィルム層4および絶縁性接着剤層5の基板1
側の最下層から上層の絶縁フィルム層4および絶縁性接
着剤層5にかけて上下に連続して配しておくのがよい。
大径貫通導体8を上下に連続して形成するときには直線
的に連続させておくのが最もよいが、多少ずらして形成
しておいても本発明の効果は得られる。しかし、その場
合は少なくとも大径貫通導体8の横断面積の25%以上が
重なるように形成しておくのがよい。
Further, the large-diameter through conductor 8 is formed on the substrate 1 of the insulating film layer 4 and the insulating adhesive layer 5 as shown in FIG.
It is preferable that the uppermost insulating film layer 4 and the upper insulating film layer 5 are continuously arranged in the vertical direction.
When the large-diameter through conductors 8 are continuously formed vertically, it is best to make them linearly continuous, but the effect of the present invention can be obtained even if they are formed slightly offset. However, in that case, it is preferable that at least 25% or more of the cross-sectional area of the large-diameter through conductor 8 is overlapped.

【0036】さらに、大径貫通導体8の上層に配された
部分は、最下層に配された部分より横断面積を小さくし
ておくのがよく、それにより大径貫通導体8の占有面積
を極小に調整して配線導体層3の高密度化を図ることが
できるようにしておくのが多層配線基板としては望まし
い。
Further, it is preferable that the portion arranged in the upper layer of the large-diameter through conductor 8 has a smaller cross-sectional area than that of the portion arranged in the lowermost layer, whereby the occupied area of the large-diameter through conductor 8 is minimized. It is desirable for the multilayer wiring board that the wiring conductor layer 3 is densified so that the density can be increased.

【0037】上層に配された大径貫通導体8の横断面積
を最下層に配されたものよりどの程度小さくしておくの
かは、配線導体層3の密度に対する要求や上層に行くに
従って小さくなる熱応力の大きさ等を考慮して適宜設定
すればよく、最も上層に配された大径貫通導体8の横断
面積が他の貫通導体7の横断面積よりも大きい状態で、
例えば段階的に小さくなるように設定すればよい。
The extent to which the cross-sectional area of the large-diameter through conductor 8 arranged in the upper layer is made smaller than that of the large-diameter through conductor 8 arranged in the lowermost layer depends on the requirement for the density of the wiring conductor layer 3 and the heat which becomes smaller as it goes up. It may be appropriately set in consideration of the magnitude of stress, etc., and in a state where the cross-sectional area of the large-diameter through conductor 8 arranged in the uppermost layer is larger than the cross-sectional areas of the other through conductors 7,
For example, it may be set so as to be gradually reduced.

【0038】さらに、図3に示すように、基板1の表面
に配設された大径貫通導体8の底面は、基板1に凹部を
形成しておき、その凹部に配線導体層4とともに埋入さ
せておくのがよく、これにより大径貫通導体8を基板1
に強固に固定することができ、より信頼性を向上させる
ことができる。この凹部は深さが1μmより浅いと応力
の分散が十分に行なわれず接着界面にクラックが生じ易
くなる傾向がある。このため、大径貫通導体8の底面を
基板1の表面に埋入させる場合には、その埋入している
部分の深さは1μm以上としておくのがよい。
Further, as shown in FIG. 3, the bottom surface of the large-diameter through conductor 8 provided on the surface of the substrate 1 has a recess formed in the substrate 1 and is embedded in the recess together with the wiring conductor layer 4. It is preferable to keep the large-diameter through conductor 8 on the substrate 1
It can be firmly fixed to the substrate, and the reliability can be further improved. If the depth of the recess is shallower than 1 μm, the stress is not sufficiently dispersed, and cracks are likely to occur at the bonding interface. Therefore, when the bottom surface of the large-diameter through conductor 8 is embedded in the surface of the substrate 1, the depth of the embedded portion is preferably 1 μm or more.

【0039】配線導体層3および貫通導体7ならびに大
径貫通導体8の形成方法は、例えば次のような方法によ
ればよい。まず、広面積に銅層を主体としこの銅層の少
なくとも一方の主面に拡散防止層(バリア層)としての
クロム,モリブデン,チタン等を被着させて下地導体層
を形成する。次に、この上に所望のパターンにフォトレ
ジストを形成し、このフォトレジストをマスクにして主
導体層部分をメッキにて所望の厚みまで形成する。その
後、フォトレジストを剥離し、下地導体層をエッチング
にて除去することにより所望のパターンに加工すること
によって、所望の配線導体層3および貫通導体7ならび
に大径貫通導体8を形成する。
The wiring conductor layer 3, the through conductor 7, and the large-diameter through conductor 8 may be formed by the following method, for example. First, a copper layer is mainly formed in a wide area, and chromium, molybdenum, titanium or the like as a diffusion prevention layer (barrier layer) is deposited on at least one main surface of the copper layer to form a base conductor layer. Next, a photoresist is formed in a desired pattern on this, and the main conductor layer portion is formed by plating to a desired thickness using this photoresist as a mask. After that, the photoresist is peeled off and the underlying conductor layer is removed by etching to form a desired pattern, thereby forming the desired wiring conductor layer 3, the through conductor 7, and the large-diameter through conductor 8.

【0040】なお、絶縁フィルム層4の最上層の主導体
層には、チップ部品の実装性および耐環境性の点から、
主導体層が銅層から成る場合には表面の酸化防止あるい
は酸化による抵抗値の増大を防止するため、その上にニ
ッケル層や金層を形成しておくとよい。
It should be noted that the uppermost main conductor layer of the insulating film layer 4 has the following characteristics in terms of mountability of chip components and environmental resistance.
When the main conductor layer is made of a copper layer, it is preferable to form a nickel layer or a gold layer on it in order to prevent oxidation of the surface or to prevent an increase in resistance value due to oxidation.

【0041】かくして、本発明の多層配線基板は、基板
1の上面に被着させた多層配線部2の上に半導体素子や
容量素子,抵抗器等の電子部品を搭載実装し、電子部品
の各電極を配線導体層3に電気的に接続することによっ
て半導体装置や混成集積回路装置等となる。
Thus, in the multilayer wiring board of the present invention, electronic components such as a semiconductor element, a capacitive element, and a resistor are mounted and mounted on the multilayer wiring section 2 attached to the upper surface of the substrate 1, and each electronic component is mounted. By electrically connecting the electrodes to the wiring conductor layer 3, a semiconductor device, a hybrid integrated circuit device or the like is obtained.

【0042】なお、本発明は上記の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
であれば種々の変更は可能である。例えば、上述の例に
おいては貫通孔6の開口を各絶縁フィルム層4および絶
縁性接着剤層5の形成ごとに行なっているが、すべての
絶縁層を形成後に一括で最上層から最下層までの貫通孔
6を開口し、そこに大径貫通導体8を配してもよい。
The present invention is not limited to the examples of the above-mentioned embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the above-mentioned example, the opening of the through hole 6 is performed for each formation of the insulating film layer 4 and the insulating adhesive layer 5, but after forming all the insulating layers, the uppermost layer to the lowermost layer are collectively formed. The through hole 6 may be opened and the large-diameter through conductor 8 may be arranged therein.

【0043】[0043]

【発明の効果】以上のように、本発明の多層配線基板に
よれば、貫通導体のうち基板の外周部において基板の表
面に配設された配線導体層上に配されたものの少なくと
も一部は、他の貫通導体よりも横断面積が大きい大径貫
通導体とされていることから、チップ部品等を実装する
際の加熱工程や温度サイクル試験等の耐環境試験におい
て発生する熱応力を基板の外周部にある大径貫通導体が
集中して支えるため、他の貫通導体には破断するような
応力がかからなくなる。このため、配線導体層と貫通導
体との界面方向にクラックを生じることはなく、配線導
体層と貫通導体との剥離がなくなる。これにより、上下
に位置する配線導体層間の導通不良の発生がなくなり、
電気的接続信頼性の優れた多層配線基板となる。
As described above, according to the multilayer wiring board of the present invention, at least a part of the through conductors arranged on the wiring conductor layer provided on the surface of the board in the outer peripheral portion of the board is formed. Since it is a large-diameter through conductor that has a larger cross-sectional area than other through conductors, the thermal stress generated in the environment resistance test such as the heating process or temperature cycle test when mounting chip parts etc. Since the large-diameter through conductors in the portion are supported in a concentrated manner, the other through conductors are not subject to stress such as breaking. For this reason, no crack is generated in the interface direction between the wiring conductor layer and the through conductor, and peeling between the wiring conductor layer and the through conductor is eliminated. This eliminates the occurrence of conduction failure between the upper and lower wiring conductor layers,
The multilayer wiring board has excellent electrical connection reliability.

【0044】さらに、本発明の多層配線基板によれば、
大径貫通導体が絶縁フィルム層および絶縁性接着剤層の
基板側の最下層から上層の絶縁フィルム層および絶縁性
接着剤層にかけて上下に連続して配されているときに
は、チップ部品等を実装する際の加熱工程や温度サイク
ル試験等の耐環境試験において発生する各層の熱応力に
対しても各層の基板の外周部にある大径貫通導体がこの
応力を集中して支えるため、各層の他の貫通導体には破
断するような応力がかからなくなる。このため、各層の
配線導体層と貫通導体との界面方向にクラックを生じる
ことはなく、配線導体層と貫通導体との剥離がなくな
る。これにより、上下に位置する配線導体層間の導通不
良の発生がなくなり、より電気的接続信頼性の優れた多
層配線基板となる。
Further, according to the multilayer wiring board of the present invention,
When the large-diameter through conductors are continuously arranged vertically from the lowermost layer on the substrate side of the insulating film layer and the insulating adhesive layer to the upper insulating film layer and the insulating adhesive layer, chip components, etc. are mounted. The large-diameter through conductors on the outer periphery of the substrate of each layer concentrate and support the thermal stress of each layer generated in the environmental resistance test such as the heating process and the temperature cycle test. The through conductor is not stressed so as to break. Therefore, no crack is generated in the interface direction between each wiring conductor layer and the through conductor, and peeling between the wiring conductor layer and the through conductor is eliminated. As a result, the occurrence of conduction failure between the upper and lower wiring conductor layers is eliminated, and the multilayer wiring board has more excellent electrical connection reliability.

【0045】さらに、本発明の多層配線基板によれば、
大径貫通導体の上層に配された部分が、最下層に配され
た部分より横断面積が小さいときには、この上層に配さ
れた大径貫通導体を基板側より上層に向かうにつれて小
さくなる各層の応力に見合った横断面積で形成しておく
ことにより、上下に連続して同じ横断面積で大径貫通導
体を配した場合よりも大径貫通導体の各層における占有
面積を小さくすることができる。このため、配線導体層
の高密度化にも対応することができるようになる。これ
により、上下に位置する配線導体層間の導通不良の発生
がなくなるとともに、高密度に配線導体層を形成するこ
とができる電気的接続信頼性の優れた多層配線基板とな
る。
Further, according to the multilayer wiring board of the present invention,
When the area of the large-diameter through conductor arranged in the upper layer has a smaller cross-sectional area than the area of the lowermost layer, the stress of each layer becomes smaller as the large-diameter through conductor arranged in this upper layer goes from the substrate side to the upper layer. By forming the large-diameter through conductors in a cross-sectional area corresponding to the above, it is possible to reduce the occupied area in each layer of the large-diameter through-conductors as compared with the case where the large-diameter through conductors are continuously arranged vertically with the same cross-sectional area. Therefore, it becomes possible to cope with the high density of the wiring conductor layer. As a result, a multi-layer wiring board with excellent electrical connection reliability, in which the occurrence of conduction failure between the wiring conductor layers located above and below can be eliminated and the wiring conductor layers can be formed at high density.

【0046】さらに、本発明の多層配線基板によれば、
大径貫通導体の底面が配線導体層とともに基板に埋入し
ているときには、チップ部品等を実装する際の加熱工程
や温度サイクル試験等の耐環境試験において発生する熱
応力が基板の外周部にある大径貫通導体に集中した際に
も、配線導体層と貫通導体との界面方向に集中する応力
を大径貫通導体の底面から側壁方向に分散することがで
きるため、配線導体層と大径貫通導体との接着強度が強
固になり、他の貫通導体には破断するような応力がより
確実にかからなくなる。このため、配線導体層と貫通導
体との界面方向にクラックを生じることはなく、配線導
体層と貫通導体との剥離がなくなる。これにより、上下
に位置する配線導体層間の導通不良の発生がなくなり、
より一層電気的接続信頼性の優れた多層配線基板とな
る。
Further, according to the multilayer wiring board of the present invention,
When the bottom surface of the large-diameter through conductor is embedded in the board together with the wiring conductor layer, the thermal stress generated in the environment resistance test such as the heating process or the temperature cycle test when mounting the chip parts etc. Even when concentrated on a large-diameter through conductor, the stress concentrated on the interface direction between the wiring conductor layer and the through-conductor can be dispersed from the bottom surface of the large-diameter through conductor to the sidewall direction. The adhesive strength with the through conductor becomes stronger, and the stress that causes the other through conductor to break is more reliably not applied. For this reason, no crack is generated in the interface direction between the wiring conductor layer and the through conductor, and peeling between the wiring conductor layer and the through conductor is eliminated. This eliminates the occurrence of conduction failure between the upper and lower wiring conductor layers,
The multilayer wiring board has even more excellent electrical connection reliability.

【0047】以上により、本発明によれば、チップ部品
等を実装する際の加熱工程や温度サイクル試験等の耐環
境試験において熱応力により発生する配線導体層と貫通
導体との剥離を抑制した、電気的接続信頼性に優れた多
層配線基板を提供することができた。
As described above, according to the present invention, the peeling between the wiring conductor layer and the penetrating conductor, which is caused by thermal stress, is suppressed in an environmental resistance test such as a heating process or a temperature cycle test when mounting a chip component or the like. It has been possible to provide a multilayer wiring board having excellent electrical connection reliability.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の多層配線基板の実施の形態の一例を示
す断面図である。
FIG. 1 is a sectional view showing an example of an embodiment of a multilayer wiring board of the present invention.

【図2】本発明の多層配線基板の実施の形態の他の例を
示す断面図である。
FIG. 2 is a cross-sectional view showing another example of the embodiment of the multilayer wiring board of the present invention.

【図3】本発明の多層配線基板の実施の形態のさらに他
の例を示す断面図である。
FIG. 3 is a sectional view showing still another example of the embodiment of the multilayer wiring board of the present invention.

【図4】本発明の多層配線基板の実施の形態の一例にお
ける基板側の最下層の絶縁フィルム層を示す上面図であ
る。
FIG. 4 is a top view showing the lowermost insulating film layer on the substrate side in an example of the embodiment of the multilayer wiring substrate of the present invention.

【符号の説明】[Explanation of symbols]

1・・・・基板 2・・・・多層配線部 3・・・・配線導体層 4・・・・絶縁フィルム層 5・・・・絶縁性接着剤層 6・・・・貫通孔 7・・・・貫通導体 8・・・・大径貫通孔 1 ... substrate 2 ... Multi-layer wiring part 3 ... Wiring conductor layer 4 ... Insulating film layer 5 ... Insulating adhesive layer 6 ... through holes 7 ... Through conductor 8 ... Large diameter through hole

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 基板上に有機樹脂から成る複数の絶縁フ
ィルム層と配線導体層とを前記絶縁フィルム層間に絶縁
性接着剤層を介して多層に積層接着するとともに、上下
に位置する前記配線導体層同士をその間の前記絶縁フィ
ルム層および前記絶縁性接着剤層に設けた貫通孔に貫通
導体を配して電気的に接続して成る多層配線基板であっ
て、前記貫通導体のうち前記基板の外周部において前記
基板の表面に配設された前記配線導体層上に配されたも
のの少なくとも一部は、他の貫通導体よりも横断面積が
大きい大径貫通導体とされていることを特徴とする多層
配線基板。
1. A plurality of insulating film layers made of an organic resin and a wiring conductor layer are laminated and adhered on the substrate in multiple layers between the insulating film layers via an insulating adhesive layer, and the wiring conductors positioned above and below are laminated. A multilayer wiring board in which a through conductor is arranged in a through hole provided in the insulating film layer and the insulating adhesive layer between the layers to electrically connect the layers to each other, wherein At least a part of the outer peripheral portion arranged on the wiring conductor layer arranged on the surface of the substrate is a large-diameter through conductor having a larger cross-sectional area than other through conductors. Multilayer wiring board.
【請求項2】 前記大径貫通導体が前記絶縁フィルム層
および前記絶縁性接着剤層の前記基板側の最下層から上
層の前記絶縁フィルム層および前記絶縁性接着剤層にか
けて上下に連続して配されていることを特徴とする請求
項1記載の多層配線基板。
2. The large-diameter through conductor is continuously arranged vertically from the lowermost layer of the insulating film layer and the insulating adhesive layer on the substrate side to the upper insulating film layer and the insulating adhesive layer. The multilayer wiring board according to claim 1, wherein the multilayer wiring board is provided.
【請求項3】 前記大径貫通導体の前記上層に配された
部分は、前記最下層に配された部分より横断面積が小さ
いことを特徴とする請求項2記載の多層配線基板。
3. The multilayer wiring board according to claim 2, wherein a portion of the large-diameter through conductor arranged in the upper layer has a smaller cross-sectional area than a portion of the large-diameter through conductor arranged in the lowermost layer.
【請求項4】 前記大径貫通導体の底面が前記配線導体
層とともに前記基板に埋入していることを特徴とする請
求項1乃至請求項3のいずれかに記載の多層配線基板。
4. The multilayer wiring board according to claim 1, wherein the bottom surface of the large-diameter through conductor is embedded in the board together with the wiring conductor layer.
JP2002086809A 2002-03-26 2002-03-26 Multilayer wiring board Pending JP2003282779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002086809A JP2003282779A (en) 2002-03-26 2002-03-26 Multilayer wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002086809A JP2003282779A (en) 2002-03-26 2002-03-26 Multilayer wiring board

Publications (1)

Publication Number Publication Date
JP2003282779A true JP2003282779A (en) 2003-10-03

Family

ID=29233279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002086809A Pending JP2003282779A (en) 2002-03-26 2002-03-26 Multilayer wiring board

Country Status (1)

Country Link
JP (1) JP2003282779A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135162A (en) * 2007-11-29 2009-06-18 Shinko Electric Ind Co Ltd Wiring board and electronic component device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135162A (en) * 2007-11-29 2009-06-18 Shinko Electric Ind Co Ltd Wiring board and electronic component device
US8334461B2 (en) 2007-11-29 2012-12-18 Shinko Electric Industries Co., Ltd. Wiring board and electronic component device

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