JP2003282559A - Storing method and pattern forming method of member to be treated, device, and manufacturing method of device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a storing method and pattern forming method for a member to be treated capable of storing a semiconductor device without changing in quality when temporarily storing the semiconductor device in the course of treatment in the case that a treatment step must be discontinued due to the failure and the like of a manufacturing device in the manufacturing step of the semiconductor device. <P>SOLUTION: This invention relates to the pattern forming method of performing a plurality of pattern formations for the same member to be treated and performs; a first step of enabling storage by covering the surface of the member to be treated by a chemically stable protecting film with repellency with respect to liquid, a second step of removing corresponding part of the protective film to a position where the pattern of the member to be treated is formed, a third step of supplying and solidifying a liquid pattern material to a part where the protecting film is removed, and a fourth step of removing the protecting film existing on the surface of the member to be treated. The first step and the fourth step are repeated sequentially. When storing the member to be treated, the storing is carried out after the completion of the first step. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for storing a member to be processed such as a semiconductor substrate, a pattern forming method, a device, and a device manufacturing method.

[0002]

2. Description of the Related Art Conventionally, when manufacturing a semiconductor device, elements are formed on the surface of a semiconductor substrate and then a wiring pattern is formed on the upper layer side of these elements. 13 and 14 are process diagrams showing a conventional pattern forming process. In order to form, for example, wiring on the surface of the semiconductor substrate 1 as shown in FIG. 1A, plasma CVD is performed on the surface of the semiconductor substrate 1 having an insulating film (not shown) as shown in FIG. Then, the wiring layer 2 is formed thereover.
The wiring layer 2 may be formed by sputtering.

In this way, the wiring layer 2 is formed on the upper layer of the semiconductor substrate 1.
After forming, the photoresist was applied to the upper layer of the wiring layer 2 to form a resist film, which was introduced into the photo-sensing step and the photo-etching step, and patterned as shown in FIG. A resist film 3 is formed.

Then, as shown in FIG. 14 (1), the semiconductor substrate 1 is introduced into a dry etching process to remove the resist film 3
Using the as a mask, the wiring layer 2 is etched. This state is shown in FIG. After the wiring layer 2 is left only in the lower layer of the resist film 3 in this way, the resist film 3 located above the wiring layer 2 is removed by a solvent.

Through these steps, the wiring 4 can be formed on the surface of the semiconductor substrate 1.

[0006]

By the way, a semiconductor device is manufactured through a huge number of processing steps of 200 or more. In that process, there is a process that requires continuous treatment within a relatively short time. This corresponds to the step of forming the resist film in the above-mentioned wiring pattern forming method. That is, since the resist film is altered in a short time, it is necessary to complete the etching promptly after forming the resist film. For this reason, it is necessary to set a stock point for temporarily storing semiconductor substrates in the stable state in the middle of the processing process, assuming that the processing process must be interrupted due to a failure of the manufacturing equipment. There is. This is because the wiring pattern is formed by removing the resist film shown in FIG. 14 (1) in which no process is performed on the member to be processed in the above-described wiring pattern forming step or in FIG. 14 (3). It is the stage where it was formed.

However, when the member to be processed is stored in a state before the pattern forming process or in a state where the wiring pattern is formed on the surface, the following problems occur. That is, since the surface on which the pattern is to be formed and the surface on which the wiring pattern is formed are exposed, dust is attached to the surface to be processed and the wiring pattern that is important as a product, and adsorption of moisture in the atmosphere and It is unavoidable that the quality is deteriorated due to the deterioration of the quality due to chemical pollution such as oxidation. In addition, when the pattern material is applied to the resist film forming surface, the pattern material is applied to portions other than the portion corresponding to the wiring pattern, resulting in a waste of the pattern material.

The present invention has been made in view of the above problems, and in the process of processing a semiconductor substrate, which is a member to be processed, when the process needs to be interrupted due to a failure of a processing apparatus, etc. When temporarily storing a semiconductor substrate on the way, the semiconductor substrate can be stored without deterioration, and a pattern material for forming a pattern is not wastefully consumed, It is an object to provide a pattern forming method.

[0009]

In order to achieve the above object, the method for storing a member to be processed according to the present invention is such that the surface of the member to be processed is covered with a liquid-repellent protective film. Is configured to be stored. In this way, the liquid-repellent protective film prevents moisture from adhering and prevents moisture from penetrating to the surface of the member to be treated, so that deterioration due to reaction with water does not occur.

Further, it is preferable that the protective film is made of a photodegradable material. Thus, the protective film can be easily removed by irradiating with light. Further, the protective film is made of fluororesin. Fluororesin is suitable as a protective film because it is chemically stable, has high liquid repellency, is resistant to chemical contamination, and is resistant to moisture. Further, high liquid resistance can be obtained, and the protective film can be prevented from being dissolved in the liquid pattern material.

The pattern forming method according to the present invention is
A pattern forming method for forming a pattern by applying a functional liquid to a member to be processed, comprising a first step of covering the surface of the member to be processed with a liquid-repellent protective film, and a pattern of the member to be processed. A second step of removing the protective film at a portion corresponding to the position where the film is formed, a third step of supplying a liquid pattern material to the portion where the protective film is removed, and remaining on the surface of the member to be processed. And a fourth step of removing the protective film. With such a configuration, the liquid repellency of the protective film prevents the liquid pattern material from entering between the protective film and the surface of the member to be processed, and the liquid pattern material flows out from the pattern opening. It is possible to prevent the shape of the film from collapsing. Further, since the member to be treated is stored after the step of coating the surface of the member to be treated with the protective film having liquid repellency, the surface of the member to be treated and the pattern material may be deteriorated by permeation of water. Absent.

The protective film is preferably made of fluororesin. The fluororesin is not only chemically stable and excellent in liquid repellency, but also has high liquid resistance, so that the protective film can be prevented from being dissolved in the liquid pattern material.
In addition, since it has high resistance to chemical contamination during storage and moisture does not easily adhere to it, moisture does not penetrate to the surface of the member to be treated, and the surface of the member to be treated or the pattern after solidification due to oxidation reaction by moisture The material does not deteriorate.

The protective film is removed by irradiating an electromagnetic wave. Thus, by disposing a mask or the like on the protective film and irradiating the electromagnetic wave, it is possible to easily remove the protective film in the portion corresponding to the position where the pattern is formed. Further, it is preferable that the method includes a step of solidifying the liquid pattern material, and the solidification of the liquid pattern material is performed by heating the liquid pattern material. By heating, when a solution of an organic metal compound is used as the liquid pattern material, the solvent can be easily evaporated. If the pattern is plating, etc.,
The precipitation of components can be promoted. Further, the solidification of the liquid pattern material includes a drying step of evaporating the solvent in the liquid pattern material and a baking step of baking the solvent after drying. Thus, by baking the solute after evaporating the solvent, it is possible to reliably solidify the solute.

On the other hand, the device according to the present invention is characterized by claim 4.
The structure is manufactured by using the pattern forming method according to claim 8. This allows the device to be manufactured with the above effects.

Further, a device manufacturing method according to the present invention is a device manufacturing method in which a pattern of a functional thin film is formed on a member to be processed, and the device is manufactured. The step of covering the surface of the member to be treated coated with the functional liquid with a liquid-repellent protective film, and the step of removing the protective film by electromagnetic waves and treating the member to be processed by using the pattern forming method It is configured to have ,.
As a result, it can be stored when it is covered with a protective film, so that it is possible to prevent contamination of the surface of the member to be treated to which the functional liquid has been applied, and it is easy to use by removing the protective film with electromagnetic waves. Can be enabled.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of a method for storing a processed member and a pattern forming method according to the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of a semiconductor substrate used in a method of storing a processed member according to an embodiment of the present invention. In FIG. 1, the surface of a semiconductor substrate 80, which is a member to be processed, is covered with a fluorine resin 82, which is a protective film. In the method of storing a member to be processed according to the present embodiment, when the processing step must be interrupted due to a failure of the manufacturing apparatus in the processing step of the semiconductor device, the surface of the semiconductor substrate 80 is covered with the fluororesin film 82 in this way. Store in the closed condition. Fluororesin is chemically stable and highly liquid-repellent, so it has high durability against chemical contamination, and since moisture does not easily adhere to it, moisture does not penetrate to the surface of the member to be treated, and it does not react due to oxidation reactions. The surface of the processing member does not deteriorate.

Here, a method of forming a fluororesin protective film on the surface of the semiconductor substrate 80 will be described. The film forming apparatus 150 for forming a fluororesin film is as shown in FIG. 2, and is capable of forming a protective film made of a fluororesin film. In FIG. 2, the protective film forming unit 150 has a film forming processing chamber 152, and the semiconductor substrate 80 is arranged on a film forming stage 154 provided in the film forming processing chamber 152. Further, in the film forming processing chamber 152, a high frequency electrode 158 connected to a high frequency power source 156 is arranged above the processing stage 154. Then, the film formation stage 15
Reference numeral 4 is a ground electrode so that a high frequency voltage can be applied between the film formation stage 154 and the high frequency electrode 158. The film forming stage 154 has a cooling unit (not shown) such as a water cooling coil, and cools the semiconductor substrate 80 arranged on the upper surface to accelerate the formation of the fluororesin film.

A vacuum pump 160 is connected to the film forming processing chamber 152 via an exhaust pipe 162 so that the inside pressure can be reduced. Further, a film forming raw material supply unit 168 is connected to the film forming processing chamber 152 via a supply pipe 166 having a flow rate control valve 164. This film forming material supply unit 1
68 has a container 172 for storing a liquid fluorine compound 170 composed of a linear PFC such as C ₄ F ₁₀ or C ₈ F ₁₈ . The container 172 has a heater 1 as a heating unit.
74 is provided so that the liquid fluorine compound 170 can be heated and vaporized. In addition, the supply pipe 166
A carrier gas supply unit 178 is connected to the downstream side of the flow rate control valve 164 via a carrier pipe 176 having a flow rate control valve 175. An inert gas such as nitrogen or argon is used as the carrier gas. Particularly, argon is desirable because it can be easily discharged.

When the protective film is formed by the film forming apparatus 150, the semiconductor substrate 80 is placed on the film forming stage 154. After that, the inside of the film formation processing chamber 152 is decompressed by the vacuum pump 160, and the vapor of the liquid fluorine compound 170 is introduced into the film formation processing chamber 152 together with the carrier gas. Then, a high frequency power source 156 applies a high frequency voltage between the high frequency electrode 158 and the film formation stage 154 to generate a gas discharge (plasma) and ionize the vapor of the liquid fluorine compound 170. The ionized liquid fluorine compound 170 is polymerized (plasma polymerized) on the semiconductor substrate 80 to form a liquid repellent fluororesin polymer film. The fluororesin film formed by such plasma polymerization is
It is photodegradable to electromagnetic waves such as light.

Next, a pattern forming method according to the embodiment of the present invention will be described. 3 and 4 are manufacturing process explanatory diagrams when the pattern forming method according to the present embodiment is applied to a semiconductor substrate. When the pattern forming method according to the present embodiment is applied to a semiconductor substrate, first, as shown in FIG.
In order to form, for example, the wiring 14 (see FIG. 4) on the surface 12 of the semiconductor substrate 10 as shown in FIG. 3, first, as shown in FIG. To form. At this time, the fluororesin film 16 is formed by using the above-mentioned plasma polymerization. Fluororesin film 1
6 has photodegradability. When the semiconductor substrate 10 being processed is stored, it is stored in this state. As described above, by storing the fluororesin film 16 formed on the surface 12 of the semiconductor substrate 10, it is possible to prevent deterioration of the surface 12 due to adsorption of moisture or chemical contamination.

After forming the fluororesin film 16,
A mask (not shown) provided with an opening is arranged from above the wiring pattern in the same manner as the wiring pattern, and the fluororesin film 16 is formed.
The portion of the surface of the wiring which becomes the pattern of the wiring 14 is decomposed and removed by irradiation of ultraviolet rays. After that, cleaning is performed, and as shown in FIG. 3C, the groove 1 that becomes a recess on the surface of the fluororesin film 16
8 is formed. The width of the groove 18 is set to the same width as the wiring 14.

After the groove 18 is thus formed in the fluororesin film 16 so that the surface 12 is exposed, a liquid pattern material is supplied to fill the groove 18 as shown in FIG. 4 (1). At this time, since the fluororesin film has liquid repellency, it serves as a bank. The liquid pattern material is an organic metal compound solution,
For example, it is obtained by adding an organic solvent to a fine powder of SiO ₂ . The inorganic conductive film 20 is formed by solidifying this. The solidification is performed by evaporating the organic solvent by drying and then firing as needed, thereby fixing the metal compound in the organic metal compound solution to the surface 12. To apply the liquid pattern material so as to fill the groove 18, it is desirable to eject the liquid pattern material from an inkjet nozzle, which is a liquid ejection device, for example. That is, the inkjet nozzle is moved along the groove 18 to eject the liquid pattern material toward the surface 12. Thereby, the liquid pattern material can be supplied to the portion where the pattern is formed without waste.

After the inorganic conductive film 20 is formed on the surface 12, the fluororesin film 16 is removed by irradiation with ultraviolet rays. That is, the fluororesin film is decomposed and removed by electromagnetic waves such as ultraviolet rays. As a result, as shown in FIG. 4B, only the inorganic conductive film 20 remains on the surface 12 of the semiconductor substrate 10 and the pattern of the wiring 14 is formed. And Figure 4
As shown in (3), the surface 12 on which the wiring pattern is formed
Is covered with a fluororesin film 17. When it is necessary to store it, it is stored with the protective film made of the fluororesin thus formed. As a result, it is possible to prevent the wiring pattern from being altered due to moisture adsorption or chemical contamination. And
When further forming a pattern on the formed wiring pattern, the fluororesin film is removed by irradiation with ultraviolet rays again,
A pattern can be formed by repeating the above procedure.

Next, the pattern forming method for the above-mentioned semiconductor substrate will be described with reference to the flow chart of FIG. First, a fluororesin is applied to the surface of the semiconductor substrate to form a protective film for the fluororesin film (S100). Here, it is determined whether or not to store (S101). When storing, it is stored in this state (S102). When not storing or when storing is completed, a mask for the wiring pattern is placed on the fluororesin film, and the portion of the surface of the fluororesin film that will be the wiring pattern is decomposed and removed by ultraviolet irradiation, and the groove is formed. It is formed (S103). Next, a liquid pattern material is supplied to the groove (S104). Subsequently, this is heated and dried to be solidified (S105). Next, the fluororesin film is removed by ultraviolet irradiation or drying (S10).
6). By repeating the above procedure, a pattern is formed on the surface of the semiconductor substrate, and the semiconductor substrate is stored if necessary.

FIG. 6 and FIG. 7 are manufacturing process explanatory views when the pattern forming method according to the present embodiment is applied to a method for separating elements in a semiconductor element. In the semiconductor substrate, the element regions 24A, 2 in which semiconductor elements are formed
It is necessary to form an insulating pattern between 4B and 24C to form element isolation so as to prevent a short circuit or the like from occurring between these element regions 24A, 24B and 24C. Then, in order to form the insulating pattern 26 for element isolation, first, referring to FIG.
As shown in (1), a fluororesin is applied and the substrate surface 2
After the fluororesin film is formed on the substrate 5, ultraviolet irradiation is performed through a mask for forming the insulating pattern 26 to form a groove 28 exposing the substrate surface 25 between the element regions 24A, 24B, 24C.

Then, an insulating layer 30 is formed on the semiconductor substrate in which the groove 28 is formed by applying an insulating material in the form of liquid so as to fill the groove 28 on the surface of the semiconductor substrate using an ink jet nozzle. This state is shown in FIG. After that, the fluororesin film 27 is removed by irradiation with ultraviolet rays as shown in FIG.

After removing the fluororesin film 27 in this way, as shown in FIG. 7A, a silicon layer 32 is formed on the insulating pattern 26 made of the insulating layer 30 by spin coating or the like. After forming the silicon layer 32, the semiconductor substrate is introduced in the spin etching process,
The silicon layer 32 is etched until the insulating pattern 26 is exposed on the surface of the uppermost layer. This state (2)
Shown in. When the storage is performed, as shown in FIG. 3C, a fluororesin is applied to the surface on which the insulating layer 30 and the insulating pattern 26 are formed, and the surface is covered with a protective film of the fluororesin film 33 and then stored. .

8 and 9 are explanatory views of the manufacturing process when the pattern forming method according to the present embodiment is applied to the process of forming the gate electrode of the FET. As shown in FIG. 8 (1), a silicon oxide film is formed on the surface of the semiconductor substrate 34, and a source electrode and a drain electrode forming a MOS-FET are formed (both not shown). ). Then, in order to form the gate electrode 40 between the source electrode and the drain electrode, as shown in FIG. 2B, a fluororesin is applied to the substrate surface 42 to form a fluororesin film 44, and then the gate is formed. Ultraviolet irradiation is performed through a mask for forming the electrode 40 to form a groove 46 exposing the substrate surface 42. The width of the groove 46 is equal to the width of the gate electrode 4.
It has the same width as 0.

Then, the liquid pattern material is injected from the ink jet nozzle to the semiconductor substrate 34 having the groove 46 formed therein, and the liquid pattern material is supplied to fill the surface of the groove 46 to form the inorganic conductive film 48. This state is shown in Figure 9.
It shows in (1). After the inorganic conductive film 48 is formed in this way, the fluororesin film 44 is removed by irradiation with ultraviolet rays as shown in FIG. 2B, whereby the surface of the oxide film (SiO ₂ ) formed on the substrate surface 42 is removed. The gate electrode 40 can be formed.

FIGS. 10, 11 and 12 are manufacturing process explanatory diagrams when the pattern forming method according to the present embodiment is applied to a contact forming process between wiring layers. Figure 10
As shown in (1), the semiconductor substrate 50 is provided with a pair of insulating patterns 52 for element isolation, and these insulating patterns 52 are used for element isolation. In addition, the MO is formed in the substantially central portion of these insulating patterns 52.
A gate electrode 54 forming an S-FET is provided. Then, a wiring pattern is formed on the upper side of the MOS-FET to form a source electrode (not shown), a drain electrode (not shown), and a gate electrode 54 which form the MOS-FET.
In order to establish a connection with, the fluororesin is first applied to cover the insulating pattern 52 and the gate electrode 54 to form the fluororesin film 58. Then, after the fluororesin film 58 is formed, ultraviolet rays are irradiated through a mask for forming the contact holes 60 to form the contact holes 60 in which the element surface is exposed.

After the contact hole 60 is formed,
As shown in FIG. 2B, tungsten is deposited and the contact hole 60 is filled with tungsten 62. Then, as shown in FIG.
After removing the tungsten 62 formed on the surface of the element by spin etching or CMP, the fluorine resin film 58 is removed by irradiation of ultraviolet rays, and the tungsten 62 filled in the contact hole 60 protrudes from the surface of the element region 56. Form. This state is shown in FIG.

As described above, the tungsten 62 is added to the element region 5.
After protruding from 6, the insulating material in the form of liquid is applied to form the insulating layer 64, and the tungsten 6 is formed by the spin etching process as shown in FIG.
Etch until 2 is exposed on its surface.

After etching is performed until the tungsten 62 is exposed, fluororesin is applied to the surface again to form a fluororesin film 66. After forming the fluororesin film 66, aluminum wiring 74 (see FIG. 12)
Ultraviolet irradiation is performed through a mask used for forming to form a groove 70 in which the insulating film 64 is exposed as shown in FIG.

After forming the groove 70 in this manner, FIG.
As shown in (1), the aluminum layer 7 is formed so as to fill the groove 70.
2 is formed, and thereafter, etching is performed until the aluminum layer 72 remains in the groove 70, and the fluororesin film 66 is removed by ultraviolet irradiation or drying.
The aluminum wiring 74 can be formed on the surface layer of. This state is shown in FIG. Then, as shown in FIG. 3C, if the fluororesin is applied so as to cover the insulating film 64 and the aluminum wiring 74, and the fluororesin film 76 is formed and stored, the aluminum wiring 74 is chemically contaminated. It is not exposed to and is not altered.

Although the semiconductor manufacturing method is shown as a preferred embodiment of the present invention, the present invention is not limited to this, and is used for manufacturing other devices such as color filters and organic EL (electroluminescence) devices. It goes without saying that it is also applicable. In addition, the present invention is not limited to a storage method when a functional thin film is formed by applying a functional liquid such as a semiconductor wiring material, a color filter material, or an organic EL material to a member to be processed, and various fields. It can also be applied as a method of storing the member to be treated.

[0036]

As described above, since the protective film having excellent liquid repellency and liquid resistance is formed and stored on the upper side of the member to be treated or the pattern formed on the surface of the member to be treated, Since there is no water adsorption or chemical contamination on the member to be processed or the pattern, the surface of the member to be processed or the formed pattern is not deteriorated.

[Brief description of drawings]

FIG. 1 is a perspective view of a semiconductor substrate used in a method of storing a processed member according to the present embodiment.

FIG. 2 is an explanatory view of a film forming apparatus.

FIG. 3 is a first explanatory diagram of a manufacturing process when the pattern forming method according to the present embodiment is applied to a semiconductor substrate.

FIG. 4 is a second explanatory diagram of the manufacturing process when the pattern forming method according to the present embodiment is applied to a semiconductor substrate.

FIG. 5 is a flowchart illustrating a manufacturing process when the pattern forming method according to the present embodiment is applied to a semiconductor substrate.

FIG. 6 is a first explanatory diagram of a manufacturing process when the pattern forming method according to the present embodiment is applied to a method for element isolation in a semiconductor element.

FIG. 7 is a second explanatory view of the manufacturing process when the pattern forming method according to the present embodiment is applied to a method for element isolation in a semiconductor element.

FIG. 8 is a diagram showing the pattern forming method according to the present embodiment
FIG. 6 is a first explanatory diagram of a manufacturing process when applied to a T gate electrode forming process.

FIG. 9 is a diagram showing the pattern forming method according to the present embodiment as FE.
FIG. 9 is a second explanatory view of the manufacturing process when applied to the T gate electrode forming process.

FIG. 10 is a first explanatory diagram of a manufacturing process when the pattern forming method according to the present embodiment is applied to a contact forming process between wiring layers.

FIG. 11 is a second explanatory view of the manufacturing process when the pattern forming method according to the present embodiment is applied to the contact forming process between wiring layers.

FIG. 12 is a third explanatory view of the manufacturing process when the pattern forming method according to the present embodiment is applied to the contact forming process between wiring layers.

FIG. 13 is a first process chart showing a conventional pattern forming process.

FIG. 14 is a second process diagram showing a conventional pattern forming process.

[Explanation of symbols]

1 ... Semiconductor substrate 2 ... wiring layer 3 ... Resist film 4 ......... Wiring 10 ... Semiconductor substrate 12 ………… Surface 14 ... Wiring 16 ... Fluorine resin film 17 ... Fluorine resin film 18 ……… Groove 20 ... Inorganic conductive film 24A, 24B, 24C ... Element area 25 ......... Substrate surface 26 ……… Insulation pattern 27 ... Fluorine resin film 28 ……… Groove 30 ... Insulation layer 32: Silicon layer 33 ... Fluorine resin film 34 ... Semiconductor substrate 40 ......... Gate electrode 42 ......... Substrate surface 44 ... Fluorine resin film 46 ……… Groove 48 ... Inorganic conductive film 50 ... Semiconductor substrate 52 ... Insulation pattern 54 ... Gate electrode 56 ………… Element area 58 ... Fluorine resin film 60 ... Contact hole 62 ... Tungsten 64 ... Insulation layer 66 ... Fluorine resin film 70 ......... Groove 72 ... Aluminum layer 74 ………… Aluminum wiring 76 ... Fluorine resin film 80 ... Semiconductor substrate 82 ... Fluorine resin film 150 ……… Deposition system 152 ... Deposition chamber 154 ... Deposition stage 156 ... Power supply 158 ... High-frequency electrode 160 ... Vacuum pump 162 ... Exhaust pipe 164 ......... Flow control valve 166 ... Supply piping 168 ... Film forming raw material supply unit 170 ... Fluorine compound 172 ... Container 174 ......... Heater 175 ......... Flow control valve 176 ... Carrier piping 178 ... Carrier gas supply unit

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Claims (10)

[Claims] 1. A method for storing a member to be treated, characterized in that the member to be treated is stored by covering the surface of the member to be treated with a liquid-repellent protective film. 2. The method for storing a member to be processed according to claim 1, wherein the protective film is photodegradable. 3. The method for storing a member to be treated according to claim 1, wherein the protective film is made of a fluororesin. 4. A pattern forming method for forming a pattern by applying a functional liquid to a member to be processed, which comprises a first step of covering the surface of the member to be processed with a liquid-repellent protective film, A second step of removing the protective film in a portion corresponding to a position where a pattern of the member to be processed is formed; a third step of supplying a liquid pattern material to the portion in which the protective film has been removed; A fourth step of removing the protective film remaining on the surface of the pattern forming method. 5. The pattern forming method according to claim 4, wherein the protective film is made of a fluororesin. 6. The pattern forming method according to claim 5, wherein the protective film is removed by irradiating an electromagnetic wave. 7. The method according to claim 4, further comprising a step of solidifying the liquid pattern material, wherein the solidification of the liquid pattern material is performed by heating the liquid pattern material. The described pattern forming method. 8. The solidification of the liquid pattern material includes a drying step of evaporating a solvent in the liquid pattern material and a baking step of baking the solute after drying.
The method for forming a pattern according to. 9. A device manufactured by using the pattern forming method according to claim 4. 10. A method for manufacturing a device, which comprises manufacturing a pattern of a functional thin film on a member to be processed, which comprises using the pattern forming method according to any one of claims 4 to 8. A device comprising: a step of covering the surface of a liquid-applied member to be processed with a liquid-repellent protective film; and a step of removing the protective film by electromagnetic waves to process the member to be processed. Production method.