JP2003234178A - Light-emitting element, its manufacturing method, and display equipment - Google Patents

Light-emitting element, its manufacturing method, and display equipment

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Publication number
JP2003234178A
JP2003234178A JP2002029702A JP2002029702A JP2003234178A JP 2003234178 A JP2003234178 A JP 2003234178A JP 2002029702 A JP2002029702 A JP 2002029702A JP 2002029702 A JP2002029702 A JP 2002029702A JP 2003234178 A JP2003234178 A JP 2003234178A
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JP
Japan
Prior art keywords
light
layer
light emitting
emitting layer
electrode layer
Prior art date
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JP2002029702A
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Japanese (ja)
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JP4104339B2 (en
Inventor
Hisanori Sugiura
久則 杉浦
Hisahide Wakita
尚英 脇田
Takashi Hamano
敬史 濱野
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting element, which has high luminous efficiency, by improving extraction efficiency of light. <P>SOLUTION: A transparent electrode 2, a luminous layer 3, and a reflector electrode 4 are laminated in this order on a transparent substrate 1, and further, on the surface of the substrate 1, an optical element 10 is provided. This optical element 10 has a function which out of the light generated in the luminous layer 3, the light, of which the incident angle θ to a light extraction surface is the critical angle θc or more, is scattered, and the light of critical angle θc or less is made to penetrate as it is. By providing such the optical element 10, external light extraction efficiency at the time of extraction of the light generated in the luminous layer 3 from the transparent substrate 1 side can be improved. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、自発光型の発光素
子及びその製造方法、並びにその発光素子を用いた表示
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a self-luminous light emitting element, a method for manufacturing the same, and a display device using the light emitting element.

【０００２】[0002]

【従来の技術】エレクトロルミネッセンス（ＥＬ）素
子、発光ダイオード等の電場発光素子は、自発光のため
視認性が高く薄型化が可能なため、バックライト等の照
明装置、平板状ディスプレイ等の表示素子として注目を
集めている。なかでも、有機化合物を発光体とする有機
ＥＬ素子は、低電圧駆動が可能なこと、大面積化が容易
なこと、適当な色素を選ぶことにより、所望の発光色を
容易に得られること等の特徴を有し、次世代ディスプレ
イとして活発に開発が行われている。2. Description of the Related Art Electroluminescent (EL) elements, electroluminescent elements such as light emitting diodes, etc. are self-luminous and have high visibility and can be made thin. Therefore, lighting devices such as backlights and display elements such as flat-panel displays. Is attracting attention as. Among them, an organic EL device using an organic compound as a light emitter can be driven at a low voltage, can easily be made large in area, and can easily obtain a desired emission color by selecting an appropriate dye. And has been actively developed as a next-generation display.

【０００３】有機発光体を用いたＥＬ素子としては、例
えば厚み１μm以下のアントラセン蒸着膜に３０Ｖの電
圧を印加することにより、青色発光が得られている(Thi
n Solid Films, 94(1982) 171)。しかし、この素子
は高電圧を印加しても十分な輝度が得られず、さらに発
光効率を向上する必要があった。As an EL device using an organic luminescent material, blue luminescence is obtained by applying a voltage of 30 V to an anthracene vapor deposition film having a thickness of 1 μm or less (Thi
n Solid Films, 94 (1982) 171). However, this device cannot obtain sufficient brightness even when a high voltage is applied, and it is necessary to further improve the light emission efficiency.

【０００４】これに対し、Tangらは透明電極（陽極）、
正孔輸送材料層、電子輸送性発光材料層、仕事関数の低
い金属を用いた陰極を積層することにより、発光効率の
向上を図り、１０Ｖ以下の印加電圧で、１０００cd/m2
の輝度を実現した(Appl.Phys.Lett.,51(1987)913)。On the other hand, Tang et al., A transparent electrode (anode),
By stacking a hole transporting material layer, an electron transporting light emitting material layer, and a cathode using a metal having a low work function, the luminous efficiency is improved, and 1000 cd / m 2 is applied at an applied voltage of 10 V or less.
Brightness (Appl. Phys. Lett., 51 (1987) 913).

【０００５】さらに、正孔輸送材料層と電子輸送材料層
とで発光材料層を挟み込んだ３層構造の素子(Jpn.J.App
l.Phys.,27(1988)L269)や、発光層にドーピングされた
色素からの発光を得る素子(J.Appl.Phys.,65(1989)361
0)が報告されている。Furthermore, a device having a three-layer structure in which a light emitting material layer is sandwiched between a hole transporting material layer and an electron transporting material layer (Jpn.J.App.
l.Phys., 27 (1988) L269) and a device for obtaining light emission from a dye doped in the light emitting layer (J.Appl.Phys., 65 (1989) 361.
0) has been reported.

【０００６】従来の有機ＥＬ素子の一般的な構成の断面
図を図７に示す。図において、７１は例えばガラス、プ
ラスチック等からなる透明基板、７２は例えばインジウ
ムティンオキサイド（ＩＴＯ）からなる透明な陽極、７
３は例えばＮ，Ｎ’ージフェニル−Ｎ，Ｎ’−ビス（３
−メチルフェニル）−１，１’−ビフェニルー４，４’
−ジアミン（ＴＰＤ）からなる正孔輸送層、７４は例え
ばトリス（８−キノリノラト）アルミニウム（Ａｌ
ｑ3）からなる電子輸送性発光層、７５は例えばＡｌＬ
ｉ合金からなる陰極である。この素子に、図に示す方向
に電圧を印加すると、陽極７２から正孔が正孔輸送層７
３に注入され、陰極７５から電子が電子輸送性発光層７
４に注入される。陽極７２から注入された正孔は正孔輸
送層７３中を通過して、さらに電子輸送性発光層７４に
注入される。そして、電子輸送性発光層７４中で、正孔
と電子が再結合し、これによって励起されたＡｌｑ3分
子からの発光が得られる。FIG. 7 shows a cross-sectional view of a general structure of a conventional organic EL element. In the figure, 71 is a transparent substrate made of, for example, glass or plastic, 72 is a transparent anode made of, for example, indium tin oxide (ITO), 7
3 is, for example, N, N′-diphenyl-N, N′-bis (3
-Methylphenyl) -1,1'-biphenyl-4,4 '
A hole transport layer made of diamine (TPD), 74 is, for example, tris (8-quinolinolato) aluminum (Al
q 3 ), an electron-transporting light-emitting layer, and 75 is, for example, AlL.
It is a cathode made of an i alloy. When a voltage is applied to this element in the direction shown in the figure, holes are generated from the anode 72 and the hole transport layer 7
3, and electrons are injected from the cathode 75 into the electron-transporting light-emitting layer 7
Injected into 4. The holes injected from the anode 72 pass through the hole transport layer 73 and are further injected into the electron transport light emitting layer 74. Then, holes and electrons are recombined in the electron-transporting light-emitting layer 74, and light emission from the Alq 3 molecule excited by this is obtained.

【０００７】ＩＴＯからなる透明な陽極は、通常、スパ
ッタ法あるいは電子ビーム蒸着法等により形成され、Ｔ
ＰＤ、Ａｌｑ3等の有機物からなる正孔輸送層や電子輸
送性発光層、ＡｌＬｉ合金等からなる陰極は、通常、抵
抗加熱蒸着法により形成される。The transparent anode made of ITO is usually formed by a sputtering method, an electron beam evaporation method or the like.
The hole-transporting layer or electron-transporting light-emitting layer made of an organic material such as PD or Alq 3 and the cathode made of an AlLi alloy are usually formed by a resistance heating vapor deposition method.

【０００８】前記有機ＥＬ素子以外の発光素子として
は、無機ＥＬ素子がある。無機ＥＬ素子の一般的な構成
の断面図を図８に示す。図において、８１は例えばガラ
スからなる透明基板、８２は例えばＩＴＯからなる透明
電極、８３は例えばＴａ2Ｏ5からなる第１絶縁材料層、
８４は例えばＭｎをドープしたＺｎＳからなる発光層、
８５は例えばＴａ2Ｏ5からなる第２絶縁材料層、８６は
例えばＡｌからなる背面電極である。この素子の両電極
に交流電界を印加すると、絶縁材料層と発光層の界面か
ら出た電子が加速されて、発光中心であるＭｎを衝突励
起し、これが基底状態に戻る際に発光する。As a light emitting element other than the organic EL element, there is an inorganic EL element. A cross-sectional view of a general structure of an inorganic EL element is shown in FIG. In the figure, 81 is a transparent substrate made of glass, 82 is a transparent electrode made of ITO, 83 is a first insulating material layer made of Ta 2 O 5 , and the like.
Reference numeral 84 denotes a light emitting layer made of ZnS doped with Mn, for example.
Reference numeral 85 is a second insulating material layer made of, for example, Ta 2 O 5 , and 86 is a back electrode made of, for example, Al. When an AC electric field is applied to both electrodes of this element, the electrons emitted from the interface between the insulating material layer and the light emitting layer are accelerated to collide with Mn, which is the emission center, to excite, and emit light when returning to the ground state.

【０００９】[0009]

【発明が解決しようとする課題】これら発光素子の発光
効率を制限している要因として、発光層で発光した光の
外部への取り出し効率（外部取り出し効率）がある。例
えば、図９に示すように、陽極９２と陰極９５に電圧が
印加されて電子輸送性発光層９４で発生した光のうち臨
界角未満の光Ｍ１は外部に取り出すことができるが、臨
界角以上の光Ｍ２は、正孔輸送材料層９３と透明電極９
２との界面、透明電極９２と透明基板９１との界面、あ
るいは透明基板９１と空気との界面（光取り出し面）で
全反射するので、外部に取り出すことができない。外部
取り出し効率は、発光層の屈折率をｎとすると、１／ｎ
2で表される。一般的な有機ＥＬ素子の場合、発光層の
屈折率が約１．７で、外部取り出し効率は約３５％とな
る。また、無機ＥＬ素子において、発光層として屈折率
約２．３のＺｎＳを用いた場合、外部取り出し効率は約
２０％である。従って、たとえ内部量子効率（注入され
た電荷の光への変換効率）が１００％であったとして
も、外部取り出し効率による制限のため、外部量子効率
は１０％〜２０％程度となってしまう。A factor that limits the light emission efficiency of these light emitting elements is the efficiency of extracting light emitted from the light emitting layer to the outside (external extraction efficiency). For example, as shown in FIG. 9, among the lights generated in the electron-transporting light-emitting layer 94 when a voltage is applied to the anode 92 and the cathode 95, the light M1 that is less than the critical angle can be extracted to the outside. The light M2 of the hole transport material layer 93 and the transparent electrode 9
Since the light is totally reflected at the interface with 2, the interface between the transparent electrode 92 and the transparent substrate 91, or the interface between the transparent substrate 91 and the air (light extraction surface), it cannot be extracted to the outside. The external extraction efficiency is 1 / n, where n is the refractive index of the light emitting layer.
Represented by 2 . In the case of a general organic EL element, the light emitting layer has a refractive index of about 1.7, and the external extraction efficiency is about 35%. Further, in the inorganic EL element, when ZnS having a refractive index of about 2.3 is used as the light emitting layer, the external extraction efficiency is about 20%. Therefore, even if the internal quantum efficiency (conversion efficiency of injected charges to light) is 100%, the external quantum efficiency is about 10% to 20% due to the limitation due to the external extraction efficiency.

【００１０】外部取り出し効率を向上するため、様々な
手法が検討されてきた。例えば、基板の端面に光反射
膜を形成する方法（特開昭６１−１９５５８８号公報等
参照）、レンズ等の集光性を有する基板を用いる方法
（特許公報第２６７０５７２号公報、特開平４−１９２
２９０号公報、特許第２７７３７２０号公報、特開平１
０−１７２７５６号公報、特開平１０−２２３３６７号
公報等参照）、発光層あるいは基板をメサ形状とする
方法（特開平４−３０６５８９号公報、Opt.Lett. vol.
27,No.6(1997)p396等参照）等が提案されている。Various techniques have been studied in order to improve the external extraction efficiency. For example, a method of forming a light-reflecting film on the end surface of the substrate (see Japanese Patent Laid-Open No. 61-195588, etc.), a method of using a substrate having a condensing property such as a lens (Japanese Patent Laid-Open No. 2670572, Japanese Patent Laid-Open No. 4-70572). 192
No. 290, Japanese Patent No. 2773720, Japanese Patent Laid-Open No. Hei 1
0-172756, JP-A-10-223367, etc.), a method of forming a light-emitting layer or a substrate into a mesa shape (JP-A-4-306589, Opt. Lett. Vol.
27, No. 6 (1997) p396 etc.) has been proposed.

【００１１】前記の方法は、基板端面に光反射膜を設
けたことにより、主に基板中を伝播して基板端面から分
散してしまう光を光取り出し面へ集光させるものであ
る。しかし、例えば微小な発光素子をマトリクス状に並
べたいわゆるドットマトリクスディスプレイ等の場合、
単位画素に対応する発光素子ごとに前記のような反射膜
を形成することは非常に困難である。In the above method, the light reflecting film is provided on the end surface of the substrate, so that the light mainly propagating through the substrate and dispersed from the end surface of the substrate is focused on the light extraction surface. However, for example, in the case of a so-called dot matrix display in which minute light emitting elements are arranged in a matrix,
It is very difficult to form the above reflective film for each light emitting element corresponding to a unit pixel.

【００１２】また、前記の方法において、基板の光取
り出し側をレンズ形状にした場合、前記したようなドッ
トマトリクスディスプレイで、たとえ発光素子とレンズ
が１対１となるように配置されていたとしても、１つの
微小な発光素子から発せられた光は等方的に放射される
ため、ある程度の厚みを持った基板を通過して、光取り
出し側に到達した光のうちの大部分が隣接画素側のレン
ズに入射してしまう。従って、目的とする発光素子の効
率向上に対する効果が少ない上、画像のにじみが生じて
しまうという問題がある。この問題を解決するため、レ
ンズを基板中に埋め込む等して、発光部とレンズをなる
べく近づける方法が提案されている（特開平１０−１７
２７５６号公報）。この方法では前記したような画像の
にじみ等は抑えられるが、レンズ材料と基板材料との屈
折率差を大きくすることが困難であるため、レンズによ
る集光効果が得らにくいという問題がある。Further, in the above method, when the light extraction side of the substrate is formed into a lens shape, even in the dot matrix display as described above, even if the light emitting elements and the lenses are arranged in a one-to-one correspondence. Since the light emitted from one minute light emitting element is isotropically radiated, most of the light reaching the light extraction side after passing through the substrate having a certain thickness is on the adjacent pixel side. Will be incident on the lens. Therefore, there is little effect on the efficiency improvement of the target light emitting element, and there is a problem that image bleeding occurs. In order to solve this problem, a method has been proposed in which the light emitting portion and the lens are brought as close as possible by, for example, embedding the lens in the substrate (JP-A-10-17).
2756 publication). Although this method can suppress the above-described image bleeding and the like, it is difficult to increase the difference in refractive index between the lens material and the substrate material, so that there is a problem in that the condensing effect by the lens is difficult to obtain.

【００１３】また、前記の方法は、基板の加工が困難
であるという問題を有する。Further, the above method has a problem that it is difficult to process the substrate.

【００１４】本発明の目的は、このような事情に鑑みな
されたものであり、製造が容易で、かつ、外部への光の
取り出し効率が高い発光素子を提供することである。ま
た、本発明の他の目的は、漏れ光による画像のにじみの
少ない発光素子を用いた表示装置を提供することであ
る。An object of the present invention is to provide a light emitting device which has been made in view of such circumstances and which is easy to manufacture and has a high efficiency of extracting light to the outside. Another object of the present invention is to provide a display device using a light emitting element that causes less image bleeding due to leaked light.

【００１５】[0015]

【課題を解決するための手段】本発明者らは、前記目的
を達成するため鋭意検討を行った結果、光取り出し面へ
の入射角が臨界角以上の光を散乱させる光学素子を設け
ることにより、従来は発光層、透明電極あるいは透明基
板中に閉じこめられて外部には取り出せなかった光を取
り出すことができ、外部取り出し効率の向上による高発
光効率を実現するに至った。同時に、高品位の表示装置
を提供可能とするに至った。Means for Solving the Problems As a result of intensive studies for achieving the above-mentioned object, the present inventors have provided an optical element for scattering light whose incident angle to a light extraction surface is a critical angle or more. The light that could not be extracted to the outside by being confined in the light emitting layer, the transparent electrode or the transparent substrate can be extracted, and the high emission efficiency has been realized by improving the extraction efficiency to the outside. At the same time, it has become possible to provide a high-quality display device.

【００１６】具体的には、以下の通りである。請求項１
記載の発明は、少なくとも第１の電極層と第２の電極層
間に挟持された発光層を備えた積層構造であり、前記発
光層で発光した光を、発光層と離隔した光取り出し面よ
り外部に取り出す発光素子であって、前記発光素子中又
は前記光取り出し面に、前記発光層で発生した光のう
ち、前記光取り出し面への入射角が臨界角以上の光は散
乱させ、臨界角未満の光はそのまま透過させる機能を有
する光学素子が、設けられていることを特徴とする。Specifically, it is as follows. Claim 1
The invention described above is a laminated structure including a light emitting layer sandwiched between at least a first electrode layer and a second electrode layer, wherein the light emitted from the light emitting layer is external to a light extraction surface separated from the light emitting layer. A light-emitting element to be extracted into the light-emitting element or in the light-outcoupling surface, out of light generated in the light-emitting layer, light having an incident angle to the light-outcoupling surface of a critical angle or more is scattered, and less than the critical angle. Is provided with an optical element having a function of transmitting the light as it is.

【００１７】上記構成により、従来は発光層、透明電極
あるいは透明基板中に閉じこめられて外部には取り出せ
なかった光を取り出すことができ、外部取り出し効率の
向上による高発光効率を実現することができる。なお、
本発明は、後述する請求項２、３に係る発明のように基
板を必須の要件としない。With the above structure, it is possible to extract light that could not be extracted outside due to being confined in the light emitting layer, the transparent electrode or the transparent substrate, and it is possible to realize high emission efficiency by improving the outside extraction efficiency. . In addition,
The present invention does not require the substrate as an essential requirement unlike the inventions according to claims 2 and 3 described later.

【００１８】請求項２記載の発明は、透明な基板上に、
透明な第１の電極層と、発光層と、光反射性の第２の電
極層とをこの順で備え、前記発光層で発光した光を、前
記透明基板側の前記発光層と離隔した光取り出し面よ
り、外部に取り出す発光素子であって、前記発光層で発
生した光のうち、前記光取り出し面への入射角が臨界角
以上の光は散乱させ、臨界角未満の光はそのまま透過さ
せる機能を有する光学素子が、前記透明基板側の光取り
出し面に設けられていることを特徴とする。According to a second aspect of the present invention, a transparent substrate is provided,
A transparent first electrode layer, a light emitting layer, and a light-reflecting second electrode layer are provided in this order, and light emitted from the light emitting layer is separated from the light emitting layer on the transparent substrate side. A light-emitting element that is extracted from the extraction surface to the outside, out of the light generated in the light-emitting layer, light having an incident angle to the light extraction surface that is equal to or greater than a critical angle is scattered, and light that is less than the critical angle is transmitted as it is. An optical element having a function is provided on the light extraction surface on the transparent substrate side.

【００１９】上記構成により、透明基板側から光を取り
出すタイプの光学素子において、外部取り出し効率の向
上による高発光効率を実現することができる。With the above structure, in the optical element of the type that takes out light from the transparent substrate side, high luminous efficiency can be realized by improving the external taking efficiency.

【００２０】請求項３記載の発明は、基板上に、光反射
性の第１の電極層と、発光層と、透明な第２の電極層と
をこの順で備え、前記発光層で発光した光を、前記第２
電極層側の、前記発光層と離隔した光取り出し面より外
部に取り出す発光素子であって、前記発光層で発生した
光のうち、前記光取り出し面への入射角が臨界角以上の
光は散乱させ、臨界角未満の光はそのまま透過させる機
能を有する光学素子が、前記第２電極層側の光取り出し
面に設けられていることを特徴とする。According to a third aspect of the invention, a light-reflecting first electrode layer, a light emitting layer, and a transparent second electrode layer are provided in this order on the substrate, and light is emitted by the light emitting layer. Light the second
A light emitting element that extracts light from a light extraction surface on the electrode layer side, which is separated from the light emission layer, and out of the light generated in the light emission layer, the light whose incident angle to the light extraction surface is a critical angle or more is scattered. It is characterized in that an optical element having a function of directly transmitting light having a critical angle is provided on the light extraction surface on the second electrode layer side.

【００２１】上記構成により、第２電極層側から光を取
り出すタイプの光学素子において、外部取り出し効率の
向上による高発光効率を実現することができる。With the above arrangement, in the optical element of the type that takes out light from the second electrode layer side, it is possible to realize high light emission efficiency by improving the external extraction efficiency.

【００２２】請求項４記載の発明は、透明な基板上に、
透明な第１の電極層と、発光層と、光反射性の第２の電
極層とをこの順で備え、前記発光層で発光した光を、前
記透明基板側の前記発光層と離隔した光取り出し面よ
り、外部に取り出す発光素子であって、前記透明基板
は、前記発光層で発生した光のうち、前記光取り出し面
への入射角が臨界角以上の光は散乱させ、臨界角未満の
光はそのまま透過させる機能を有する光学素子で構成さ
れていることを特徴とする。According to a fourth aspect of the present invention, on a transparent substrate,
A transparent first electrode layer, a light emitting layer, and a light-reflecting second electrode layer are provided in this order, and light emitted from the light emitting layer is separated from the light emitting layer on the transparent substrate side. A light-emitting element that is extracted from the extraction surface to the outside, wherein the transparent substrate scatters, of the light generated in the light-emitting layer, light whose incident angle to the light extraction surface is a critical angle or more and less than the critical angle. It is characterized by being composed of an optical element having a function of transmitting light as it is.

【００２３】上記構成により、基板を省略でき、コスト
の低減を図ることができる。With the above structure, the substrate can be omitted and the cost can be reduced.

【００２４】請求項５記載の発明は、請求項３記載の発
光素子において、前記第２電極層と前記光学素子との間
に、保護層が形成されていることを特徴とする。According to a fifth aspect of the present invention, in the light emitting element according to the third aspect, a protective layer is formed between the second electrode layer and the optical element.

【００２５】上記構成により、例えば透明な第２の電極
層上に光学素子を貼り合わせ等の方法により形成する際
に、貼り合わせ用の粘着材等から発生する有機物が第２
の電極層を通して発光層中に浸透し、発光層が劣化する
等の問題が発生する。従って、光学素子と透明な第２の
電極層間に保護層を導入することにより、これらの劣化
を防ぐことができる。With the above structure, when an optical element is formed on the transparent second electrode layer by a method such as bonding, an organic substance generated from the bonding material for bonding is second.
And penetrates into the light emitting layer through the electrode layer to cause a problem such as deterioration of the light emitting layer. Therefore, by introducing a protective layer between the optical element and the transparent second electrode layer, these deteriorations can be prevented.

【００２６】請求項６記載の発明は、請求項１乃至５の
何れかに記載の発光素子において、前記光学素子は、シ
ート状に形成されており、その厚み方向に屈折率が分布
した構造となっていることを特徴とする。According to a sixth aspect of the present invention, in the light-emitting element according to any one of the first to fifth aspects, the optical element is formed in a sheet shape, and the refractive index is distributed in the thickness direction thereof. It is characterized by becoming.

【００２７】請求項７記載の発明は、請求項６記載の発
光素子において、前記光学素子の平均屈折率が、前記光
学素子が接する層のうち、発光層側にある層の屈折率よ
りも高いことを特徴とする。According to a seventh aspect of the present invention, in the light emitting element according to the sixth aspect, the average refractive index of the optical element is higher than the refractive index of the layer on the light emitting layer side of the layers in contact with the optical element. It is characterized by

【００２８】上記構成により、光学素子の屈折率が、光
学素子が接する層のうち発光層側にある層の屈折率より
も低い場合、これらの層と光学素子の界面で全反射が起
こってしまい、十分な効果が得られないからである。With the above structure, when the refractive index of the optical element is lower than the refractive index of the layer on the light emitting layer side of the layers in contact with the optical element, total reflection occurs at the interface between these layers and the optical element. , Because the sufficient effect cannot be obtained.

【００２９】請求項８記載の発明は、請求項１乃至７の
何れかに記載の発光素子において、前記発光層が有機化
合物からなることを特徴とする。The invention described in claim 8 is the light emitting device according to any one of claims 1 to 7, characterized in that the light emitting layer is made of an organic compound.

【００３０】請求項９記載の発明は、複数の画素を有
し、各画素は請求項１乃至８の何れかに記載の発光素子
で構成された表示装置であって、前記発光層と前記光学
素子との距離をｔ、１画素の幅をＬ、前記光取り出し面
における臨界角をθc、前記発光層の屈折率をｎとした
場合、下記の式（１）を満たしていることを特徴とする
表示装置。 ｔ＜（ｎｃｏｓθc／２）×Ｌ …（１）The invention according to claim 9 is a display device comprising a plurality of pixels, each pixel comprising the light emitting element according to any one of claims 1 to 8, wherein the light emitting layer and the optical element are provided. When the distance from the device is t, the width of one pixel is L, the critical angle at the light extraction surface is θc, and the refractive index of the light emitting layer is n, the following formula (1) is satisfied. Display device. t <(ncos θc / 2) × L (1)

【００３１】発光素子を用いて表示装置を構成すると、
光が横方向に拡がり、隣接する画素に入り込み、画素の
にじみという問題が生じるおそれが生じる。そこで、発
光層と光学素子との距離と、１画素の幅長との関係を臨
界角等により規定して、隣接する画素間で光が混じり合
わないようにした。この結果、漏れ光による画像のにじ
みを可及的に低減することができる。When a display device is constructed using light emitting elements,
Light spreads laterally and enters adjacent pixels, which may cause a problem of pixel bleeding. Therefore, the relationship between the distance between the light emitting layer and the optical element and the width length of one pixel is defined by a critical angle or the like so that light is not mixed between adjacent pixels. As a result, image bleeding due to leaked light can be reduced as much as possible.

【００３２】請求項１０記載の発明は、透明な基板上
に、透明な第１の電極層と、発光層と、光反射性の第２
の電極層とをこの順で備え、前記発光層で発光した光
を、前記透明基板側の前記発光層と離隔した光取り出し
面より、外部に取り出す発光素子の製造方法であって、
透明な基板上に透明な第１の電極層を形成する工程と、
第１の電極層上に発光層を形成する工程と、発光層上に
光反射性の第２の電極層を形成する工程と、基板表面
に、光取り出し面への入射角が臨界角以上の光は散乱さ
せ臨界角未満の光はそのまま透過させる機能を有する光
学素子を形成する工程と、を有することを特徴とする。According to a tenth aspect of the present invention, a transparent first electrode layer, a light emitting layer, and a light reflecting second layer are provided on a transparent substrate.
An electrode layer in this order, the light emitted in the light emitting layer, from the light extraction surface separated from the light emitting layer on the transparent substrate side, a method for manufacturing a light emitting element,
Forming a transparent first electrode layer on a transparent substrate;
A step of forming a light emitting layer on the first electrode layer, a step of forming a light reflecting second electrode layer on the light emitting layer, and an incident angle on the light extraction surface on the substrate surface of a critical angle or more. Forming an optical element having a function of scattering light and transmitting light of less than the critical angle as it is.

【００３３】請求項１１記載の発明は、基板上に、光反
射性の第１の電極層と、発光層と、透明な第２の電極層
とをこの順で備え、前記発光層で発光した光を、前記第
２電極層側の、前記発光層と離隔した光取り出し面より
外部に取り出す発光素子の製造方法であって、基板上に
光反射性の第１の電極層を形成する工程と、第１の電極
層上に発光層を形成する工程と、発光層上に透明な第２
の電極層を形成する工程と、第２の電極層上に、光取り
出し面への入射角が臨界角以上の光は散乱させ臨界角未
満の光はそのまま透過させる機能を有する光学素子を形
成する工程と、を有することを特徴とする。According to the eleventh aspect of the present invention, a light-reflecting first electrode layer, a light emitting layer, and a transparent second electrode layer are provided in this order on a substrate, and light is emitted by the light emitting layer. A method of manufacturing a light emitting device, which extracts light from a light extraction surface of the second electrode layer side, which is separated from the light emitting layer, wherein a light reflective first electrode layer is formed on a substrate. A step of forming a light emitting layer on the first electrode layer, and a transparent second layer on the light emitting layer.
And the step of forming the electrode layer of (1), and an optical element having a function of scattering light having an incident angle on the light extraction surface of a critical angle or more and transmitting light of less than the critical angle as it is on the second electrode layer. And a process.

【００３４】請求項１２記載の発明は、請求項１記載の
発光素子の製造方法であって、前記第２の電極層と前記
光学素子との間に保護層を形成する工程を有することを
特徴とする。The invention described in claim 12 is the method for manufacturing a light emitting device according to claim 1, which further comprises a step of forming a protective layer between the second electrode layer and the optical element. And

【００３５】請求項１３記載の発明は、請求項１０乃至
１２の何れかに記載の発光素子の製造方法であって、前
記光学素子を形成する工程が、シート状光学素子を張り
合わせることにより、光学素子を形成することであるこ
とを特徴とする。According to a thirteenth aspect of the present invention, in the method for manufacturing a light-emitting element according to any of the tenth to twelfth aspects, the step of forming the optical element is performed by laminating sheet-like optical elements. It is characterized by forming an optical element.

【００３６】[0036]

【発明の実施の形態】（実施の形態１）図１は実施の形
態１に係る発光素子を模式的に示す断面図である。この
発光素子は、透明な基板１上に、透明電極（透明な第１
電極層）２、発光層３、反射電極（光反射性の第２電極
層）４がこの順で積層され、更に基板１の表面（図１の
下側表面、光取り出し面に相当）に光学素子１０が設け
られて構成されている。この光学素子１０は、発光層３
で発生した光のうち、光取り出し面への入射角θが臨界
角θc以上の光Ｍ２は散乱させ、臨界角θc未満の光Ｍ１
はそのまま透過させる機能を有する。このような光学素
子１０を設けることにより、後述するように、発光層３
で発生した光が、透明基板１側から取り出される際の、
外部取り出し効率を向上することができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1 is a sectional view schematically showing a light emitting device according to a first embodiment. This light-emitting device comprises a transparent electrode (a transparent first electrode) on a transparent substrate 1.
An electrode layer) 2, a light emitting layer 3, and a reflective electrode (a light-reflective second electrode layer) 4 are laminated in this order, and the surface of the substrate 1 (the lower surface of FIG. 1, corresponding to the light extraction surface) is optically coated. The element 10 is provided and configured. This optical element 10 includes a light emitting layer 3
Light M2 having an incident angle θ on the light extraction surface that is equal to or greater than the critical angle θc is scattered by the light M1 that is less than the critical angle θc.
Has a function of transmitting as it is. By providing such an optical element 10, as will be described later, the light emitting layer 3
When the light generated in 1 is taken out from the transparent substrate 1 side,
The external extraction efficiency can be improved.

【００３７】ここで、基板１としては、発光素子を坦持
でき、かつ透明であればよく、ガラス基板の他、ポリカ
ーボネート、ポリメチルメタクリレート、ポリエチレン
テレフタレートなどの樹脂基板等を用いることができ
る。Here, as the substrate 1, it is sufficient that it can support a light emitting element and is transparent, and a glass substrate or a resin substrate such as polycarbonate, polymethylmethacrylate, polyethylene terephthalate, or the like can be used.

【００３８】反射電極４は、反射率が高く、発光層３を
効率良く発光させることができる電極機能を備えていれ
ばよく、ＡｌあるいはＡｌ化合物、銀あるいは銀化合物
等の金属膜を用いることが好ましい。銀化合物として
は、銀・パラジウム・銅（ＡｇＰｄＣｕ）の合金あるい
は銀・金・銅（ＡｇＡｕＣｕ）の合金を用いるのが好ま
しい。また、有機化合物を発光層として用いるいわゆる
電流注入型の有機ＥＬ素子の場合、通常反射電極は陰極
となり、電子の注入効率のよい材料、すなわち仕事関数
の低い材料を用いることが多い。有機ＥＬ素子の陰極と
しては例えばＡｌＬｉ合金、ＭｇＡｇ合金等の、仕事関
数が低いが反応性の高い金属（Ｌｉ、Ｍｇ等）と反応性
が低く安定な金属（Ａｌ、Ａｇ等）との合金を用いれば
よい。あるいは、Ｌｉ／Ａｌ、ＬｉＦ／Ａｌ等の仕事関
数の低い金属あるいはその化合物と仕事関数の高い金属
の積層電極などを用いることができる。反射電極の形成
方法としては、スパッタ、エレクトロンビーム蒸着、抵
抗加熱蒸着等の方法を用いればよい。The reflective electrode 4 has a high reflectance and has an electrode function capable of efficiently emitting light from the light emitting layer 3, and a metal film of Al or Al compound, silver or silver compound is used. preferable. As the silver compound, it is preferable to use an alloy of silver / palladium / copper (AgPdCu) or an alloy of silver / gold / copper (AgAuCu). Further, in the case of a so-called current injection type organic EL element in which an organic compound is used as a light emitting layer, the reflective electrode usually serves as a cathode, and a material having a high electron injection efficiency, that is, a material having a low work function is often used. As the cathode of the organic EL element, for example, an alloy of a metal having a low work function but high reactivity (Li, Mg etc.) and a metal having a low reactivity and stability (Al, Ag etc.) such as an AlLi alloy and a MgAg alloy. You can use it. Alternatively, a stacked electrode of a metal having a low work function such as Li / Al or LiF / Al or a compound thereof and a metal having a high work function can be used. As a method for forming the reflective electrode, a method such as sputtering, electron beam evaporation, resistance heating evaporation, or the like may be used.

【００３９】発光層３は、有機ＥＬ素子の場合、Ａｌｑ
3等の有機化合物から構成される。発光層３は、単層構
造であっても、機能分離した多層構造であってもよい。
多層構造の場合、従来の構造と同様に、例えば、ＴＰＤ
等を用いた正孔輸送材料層とＡｌｑ3等を用いた電子輸
送性発光材料層とを積層した２層構造や、ＴＰＤ等を用
いた正孔輸送材料層とペリレン等を用いた発光材料層と
オキサジアゾール等を用いた電子輸送材料層とを積層し
た３層構造や、あるいはそれ以上の多層構造にして用い
られる。なお、ＩＴＯ等の正孔注入電極側に正孔輸送材
料層を、ＡｌＬｉ、ＭｇＡｇ等の電子注入電極側に電子
輸送材料層を配置する。有機ＥＬ素子の場合、発光層の
形成は主に抵抗加熱蒸着法を用いるが、エレクトロンビ
ーム蒸着法、スパッタ法等を用いてもよい。The light emitting layer 3 is made of Alq in the case of an organic EL device.
Composed of organic compounds such as 3 . The light emitting layer 3 may have a single-layer structure or a multi-layer structure with separated functions.
In the case of a multi-layered structure, like the conventional structure, for example, TPD
2-layer structure or a laminate of an electron transporting light-emitting material layer or the like using a hole transport material layer and the Alq 3 or the like using the light emitting material layer using the hole transport material layer and perylene using TPD or the like And an electron-transporting material layer using oxadiazole or the like are laminated to form a three-layer structure or a multilayer structure having more layers. A hole transporting material layer is arranged on the side of the hole injecting electrode such as ITO, and an electron transporting material layer is arranged on the side of the electron injecting electrode such as AlLi or MgAg. In the case of an organic EL element, the light emitting layer is mainly formed by the resistance heating vapor deposition method, but an electron beam vapor deposition method, a sputtering method or the like may be used.

【００４０】また、無機ＥＬ素子の場合、例えば、従来
構造と同様に、ＭｎなどをドープしたＺｎＳ等からなる
発光層を、Ｔａ2Ｏ5等からなる絶縁材料層で挟んだ構造
にする。これらの層の形成は、主にスパッタ法を用いる
が、エレクトロンビーム蒸着法、抵抗加熱蒸着法、イオ
ンプレーティング法等を用いてもよい。In the case of an inorganic EL element, for example, similar to the conventional structure, a light emitting layer made of ZnS doped with Mn or the like is sandwiched between insulating material layers made of Ta 2 O 5 or the like. A sputtering method is mainly used to form these layers, but an electron beam evaporation method, a resistance heating evaporation method, an ion plating method, or the like may be used.

【００４１】透明電極２としては、通常、光透過率が５
０％を超えるものが用いられる。例えば、インジウムテ
ィンオキサイド（ＩＴＯ）、酸化錫等の酸化物透明電極
や、５〜数十ｎｍ程度の金属薄膜電極を用いればよい。
透明電極の形成は、スパッタ法、抵抗加熱蒸着法、エレ
クトロンビーム蒸着法、イオンプレーティング法等が用
いられる。The transparent electrode 2 usually has a light transmittance of 5
More than 0% is used. For example, an oxide transparent electrode such as indium tin oxide (ITO) or tin oxide, or a metal thin film electrode having a thickness of about 5 to several tens nm may be used.
For forming the transparent electrode, a sputtering method, a resistance heating vapor deposition method, an electron beam vapor deposition method, an ion plating method or the like is used.

【００４２】光学素子１０としては、図１に示すよう
に、基板１と光学素子１０の界面に入射してくる光のう
ち、入射角が臨界角以上の光を散乱させる素子を用い
る。基板１の屈折率ｎ＝１．５とすると、光学素子１０
がない場合、基板１と空気の界面での臨界角θｃはａｓ
ｉｎ（１／１．５）＝４２°となり、これ以上の入射角
の光は基板内に閉じ込められて外部に取り出せない。そ
こで、臨界角θｃ以上の光を散乱させることにより、一
部の光を臨界角内に導入することにより、取り出し効率
を向上することができる。As the optical element 10, as shown in FIG. 1, of the light incident on the interface between the substrate 1 and the optical element 10, an element that scatters light having an incident angle of a critical angle or more is used. When the refractive index n of the substrate 1 is 1.5, the optical element 10
, The critical angle θc at the interface between the substrate 1 and air is as
in (1 / 1.5) = 42 °, and light with an incident angle larger than this is confined in the substrate and cannot be extracted to the outside. Therefore, by scattering light having a critical angle θc or more and introducing a part of the light within the critical angle, the extraction efficiency can be improved.

【００４３】光学素子１０としては、例えば、特開平２
−２８０１０２に開示されている特定の角度範囲の入射
光を選択的に散乱するプラスチックシート（例えばルミ
スティフィルム（商品名：住友化学製））等が用いられ
る。このルミスティフィルムは、厚み方向に屈折率が分
布した構造を有し、入射角が臨界角θc以上の光Ｍ２は
散乱させ、臨界角θc未満の光Ｍ１はそのまま透過させ
る機能を有する。そして、この光学フィルムを基板１表
面に張り合わせればよい。As the optical element 10, for example, Japanese Unexamined Patent Application Publication No. Hei 2
A plastic sheet (for example, Lumisty film (trade name: manufactured by Sumitomo Chemical Co., Ltd.)) that selectively scatters incident light in a specific angle range disclosed in 280102 is used. This Lumisty film has a structure in which the refractive index is distributed in the thickness direction, and has a function of scattering the light M2 having an incident angle equal to or greater than the critical angle θc and transmitting the light M1 having the incident angle less than the critical angle θc as it is. Then, this optical film may be attached to the surface of the substrate 1.

【００４４】（実施の形態２）上記の例では、光学素子
１０を基板１の表面に設けるように構成したけれども、
図２に示すように、基板１を省略し、光学素子１０が基
板を兼ねるようにしてもよい。発光素子を製造するに際
しては、光学素子１０上に、透明電極２、発光層３、反
射電極４をこの順で積層すればよい。(Second Embodiment) In the above example, the optical element 10 is provided on the surface of the substrate 1, but
As shown in FIG. 2, the substrate 1 may be omitted and the optical element 10 may also serve as the substrate. When manufacturing the light emitting element, the transparent electrode 2, the light emitting layer 3, and the reflective electrode 4 may be laminated in this order on the optical element 10.

【００４５】（実施の形態３）図３は実施の形態３に係
る発光素子を模式的に示す断面図である。実施の形態１
に係る発光素子では発光層３で発生した光を基板１側か
ら取り出すように構成されていたが、本実施の形態に係
る発光素子では発光層３で発生した光を基板１とは反対
側から取り出すように構成されている。すなわち、本実
施の形態３に係る発光素子は、基板１上に反射電極（光
反射性の第１電極層）１１、発光層３、透明電極（透明
な第２電極層）１２、光学素子１０が順に積層されてお
り、光を透明電極１２側から取り出すように構成されて
いる。なお、この実施の形態３では透明電極１２の図３
における上面が光取り出し面に相当する。(Third Embodiment) FIG. 3 is a sectional view schematically showing a light emitting device according to a third embodiment. Embodiment 1
In the light emitting element according to the first embodiment, the light generated in the light emitting layer 3 is extracted from the substrate 1 side, but in the light emitting element according to the present embodiment, the light generated in the light emitting layer 3 is emitted from the side opposite to the substrate 1. It is configured to be ejected. That is, in the light emitting element according to the third embodiment, the reflective electrode (light reflective first electrode layer) 11, the light emitting layer 3, the transparent electrode (transparent second electrode layer) 12, the optical element 10 are provided on the substrate 1. Are sequentially stacked, and light is extracted from the transparent electrode 12 side. In the third embodiment, the transparent electrode 12 shown in FIG.
The upper surface in corresponds to the light extraction surface.

【００４６】このような透明電極１２側から光を取り出
す構成であれば、実施の形態１と異なり、基板１として
透明基板を使用する必要はない。基板１としてガラスあ
るいはポリカーボネート、ポリメチルメタクリレート、
ポリエチレンテレフタレートなどの樹脂フィルム等の他
に、シリコン等の不透明基板を用いることができる。ま
た、透明電極１２としては、実施の形態１の場合と同様
にＩＴＯ、酸化錫等の酸化物透明電極あるいは５〜数十
ｎｍ程度の金属薄膜を用いればよいが、有機ＥＬ素子の
場合、有機発光層が付着した基板を高温に加熱すると、
有機層が劣化してしまうため、透明電極２は低温成膜す
る必要がある。さらに、透明電極としてＩＴＯ等をスパ
ッタ法やエレクトロンビーム蒸着法等により有機発光層
上に形成する場合、有機発光層へのダメージを軽減する
ため、有機発光層上にバッファ層を形成してから透明電
極を形成するのが好ましい。バッファ層としては、銅フ
タロシアニン等の熱的に安定な有機化合物あるいは膜厚
１０ｎｍのＭｇＡｇ等の透明金属薄膜等を用いればよ
い。With such a structure that the light is extracted from the transparent electrode 12 side, unlike the first embodiment, it is not necessary to use a transparent substrate as the substrate 1. As the substrate 1, glass or polycarbonate, polymethylmethacrylate,
In addition to a resin film such as polyethylene terephthalate, an opaque substrate such as silicon can be used. Also, as the transparent electrode 12, an oxide transparent electrode of ITO, tin oxide or the like or a metal thin film of about 5 to several tens nm may be used as in the case of the first embodiment. When the substrate with the light emitting layer is heated to a high temperature,
Since the organic layer deteriorates, it is necessary to form the transparent electrode 2 at a low temperature. Furthermore, when ITO or the like is formed as a transparent electrode on the organic light emitting layer by a sputtering method or an electron beam vapor deposition method, a transparent layer is formed after forming a buffer layer on the organic light emitting layer in order to reduce damage to the organic light emitting layer. It is preferable to form electrodes. As the buffer layer, a thermally stable organic compound such as copper phthalocyanine or a transparent metal thin film such as MgAg having a film thickness of 10 nm may be used.

【００４７】反射電極４としては、実施の形態１で示し
たような金属を用いることができるほか、反射層と透明
電極の２層構成とすることもできる。すなわち、基板上
に反射率の大きい金属あるいは誘電体多層膜等からなる
反射層を形成した後、この上にＩＴＯ等からなる透明電
極を形成すればよい。この場合、反射層は電極として機
能する必要がないため、導電材料、絶縁材料の何れを用
いてもよい。As the reflective electrode 4, the metal as shown in the first embodiment can be used, or a two-layer structure of a reflective layer and a transparent electrode can be used. That is, after forming a reflective layer made of a metal or a dielectric multilayer film having a high reflectance on a substrate, a transparent electrode made of ITO or the like may be formed thereon. In this case, since the reflective layer does not need to function as an electrode, either a conductive material or an insulating material may be used.

【００４８】さらに、光学素子１０を形成する前に、透
明電極１２上に保護層を形成するのが好ましい。すなわ
ち、透明電極１２上に光学素子１０を貼り合わせ等の方
法により形成する際、例えば貼り合わせ用の粘着材等か
ら発生する有機物が透明電極１２を通して発光層３中に
浸透し、発光層３が劣化する等の問題が発生する。従っ
て、光学素子１０と透明電極２間に保護層を導入するこ
とにより、これらの劣化を防ぐことができる。Further, it is preferable to form a protective layer on the transparent electrode 12 before forming the optical element 10. That is, when the optical element 10 is formed on the transparent electrode 12 by a method such as bonding, an organic substance generated from, for example, an adhesive material for bonding penetrates into the light emitting layer 3 through the transparent electrode 12, and the light emitting layer 3 is formed. Problems such as deterioration occur. Therefore, by introducing a protective layer between the optical element 10 and the transparent electrode 2, these deteriorations can be prevented.

【００４９】なお、上記実施の形態１，３において、光
学素子の形成方法として、特定の角度範囲の入射光を選
択的に散乱するプラスチックシート等を基板、透明電極
あるいは保護層上に貼り合わせるとしたが、これに限る
ものではなく、例えば特開平２−２８０１０２に開示さ
れている方法により、屈折率に差がある複数の化合物を
混合したものを基板、透明電極あるいは保護層上に塗布
した後、所定の方向から紫外線等を入射して所望の光学
素子としてもよい。In the first and third embodiments described above, as a method of forming an optical element, a plastic sheet or the like that selectively scatters incident light in a specific angle range is attached to a substrate, a transparent electrode or a protective layer. However, the present invention is not limited to this, and after coating a mixture of a plurality of compounds having different refractive indexes on the substrate, the transparent electrode or the protective layer, for example, by the method disclosed in JP-A-2-280102. Alternatively, ultraviolet rays or the like may be incident from a predetermined direction to form a desired optical element.

【００５０】また、光学素子の屈折率は、光学素子が接
する層のうち、発光層側にある層の屈折率よりも高いこ
とが好ましい。すなわち、図１においては基板１、図２
においては透明電極１２、あるいは透明電極１２上に保
護層が設置されている場合は保護層よりも屈折率が高い
ほうが好ましい。光学素子の屈折率が、前記基板、透明
電極、保護層等の屈折率よりも低い場合、これらの層と
光学素子の界面で全反射が起こってしまい、十分な効果
が得られないからである。The refractive index of the optical element is preferably higher than the refractive index of the layer on the light emitting layer side of the layers in contact with the optical element. That is, in FIG. 1, the substrate 1 and FIG.
In the above, in the case where the transparent electrode 12 or a protective layer is provided on the transparent electrode 12, the refractive index is preferably higher than that of the protective layer. When the refractive index of the optical element is lower than the refractive index of the substrate, the transparent electrode, the protective layer, etc., total reflection occurs at the interface between these layers and the optical element, and a sufficient effect cannot be obtained. .

【００５１】（実施の形態４）本形態は、複数の画素を
有し、各画素は上記実施の形態１〜３に係る発光素子で
構成された表示装置に関するものである。実施の形態１
〜３に係る発光素子は、光取り出し効率の向上を図るた
め、光学素子１０を設けるように構成されている。しか
しながら、光学素子１０により光が散乱することになる
ため、実施の形態１〜３に係る発光素子を用いて表示装
置を構成すると、光が横方向に拡がり、隣接する画素に
入り込み、画素のにじみという問題が生じるおそれが生
じる。そこで、本実施の形態に係る表示装置は、前記発
光層と前記光学素子との距離と、１画素の幅長との関係
を臨界角等により規定して、隣接する画素間で光が混じ
り合わないようにしたことを特徴とする。以下、具体的
に説明する。(Embodiment 4) The present embodiment relates to a display device having a plurality of pixels, each pixel being composed of the light emitting element according to the first to third embodiments. Embodiment 1
The light-emitting elements according to 3 to 3 are configured to include the optical element 10 in order to improve the light extraction efficiency. However, since the light is scattered by the optical element 10, when the display device is configured using the light emitting elements according to the first to third embodiments, the light spreads in the lateral direction, enters the adjacent pixel, and blurs the pixel. The problem may occur. Therefore, in the display device according to the present embodiment, the relationship between the distance between the light emitting layer and the optical element and the width length of one pixel is defined by a critical angle or the like, and light is mixed between adjacent pixels. The feature is that it is not. The details will be described below.

【００５２】本形態の表示装置において、発光層と前記
光学素子との距離ｔと、１画素の幅長Ｌは、下記の式
（１）を満たすよう決定されている。In the display device of the present embodiment, the distance t between the light emitting layer and the optical element and the width L of one pixel are determined so as to satisfy the following expression (1).

【００５３】 ｔ＜（ｎｃｏｓθc／２）×Ｌ …（１） ここで、θcは光取り出し面に対する臨界角、ｎは発光
層の屈折率である。T <(ncos θc / 2) × L (1) where θc is the critical angle with respect to the light extraction surface, and n is the refractive index of the light emitting layer.

【００５４】以下に、前記式の導入について図４を参照
しながら説明する。なお、本図は、式の導入を説明する
ために簡略化して記載している。The introduction of the above equation will be described below with reference to FIG. It should be noted that this diagram is simplified for explaining the introduction of the formula.

【００５５】本図において、発光素子３２の発光層で発
光した光のうち反射層３０で反射した光は、光取り出し
面３１に向かう。この際、光取り出し面３１に対する入
射角θが臨界角θc未満の光は外部へ取り出されるが、
臨界角θc以上の光は全反射する。このような場合、ｔ
とＬがｔ＜Ｌ／（２ｔａｎθc）の関係を満たせば、全
反射した光が、同一素子内の反射層に到達し、隣接する
画素の反射層へは向かわない。ここで、θcは臨界角で
あるのでｎ×ｓｉｎθc＝１が成立し、またｔａｎθc＝
ｓｉｎθc／ｃｏｓθcであるから、これらをまとめて前
記式（１）が導入される。なお、図４において、３３は
発光領域で発光した光が透過する部分であり、具体的に
は透明電極、発光層である。In this figure, of the light emitted from the light emitting layer of the light emitting element 32, the light reflected by the reflective layer 30 is directed to the light extraction surface 31. At this time, light whose incident angle θ with respect to the light extraction surface 31 is less than the critical angle θc is extracted to the outside,
Light having a critical angle θc or more is totally reflected. In such a case, t
And L satisfy the relationship of t <L / (2 tan θc), the totally reflected light reaches the reflection layer in the same element and does not go to the reflection layer of the adjacent pixel. Here, since θc is a critical angle, n × sin θc = 1 holds, and tan θc =
Since sin θc / cos θc, the above formula (1) is introduced together. In FIG. 4, reference numeral 33 denotes a portion through which the light emitted in the light emitting region is transmitted, specifically, a transparent electrode and a light emitting layer.

【００５６】前記式（１）を満たせば、発光素子内で発
光した光の大部分は、その発光素子の光取り出し面３１
（正確には光学素子１０の表面）から取り出されること
になるので、隣接する画素が異なる色の光を発光する場
合、混色せず、画像にじみ等の不具合が抑えられる。If the above expression (1) is satisfied, most of the light emitted in the light emitting element is almost the same as the light extraction surface 31 of the light emitting element.
Since the light is taken out from (correctly, the surface of the optical element 10), when adjacent pixels emit light of different colors, color mixing does not occur, and problems such as image blurring can be suppressed.

【００５７】（その他の事項）上記実施の形態に係る発
光素子は、発光層として有機化合物を用いた有機ＥＬ素
子としたが、例えば発光層として、Ｍｎ等をドープした
ＺｎＳ等からなる発光層を、Ｔａ2Ｏ5等からなる絶縁層
で挟んだ構造の無機ＥＬ素子としてもよい。また、上記
実施の形態に係る発光素子では、光学素子１０は光取り
出し面に設けたけれども、発光素子中に設けるようにし
てもよい。例えば、実施の形態１について説明すれば、
光学素子１０は基板１の表面（光取り出し面に相当）に
設けたけれども、発光素子中（例えば基板１と透明電極
２との間）に設けるようにしてもよい。また、上記実施
の形態に係る発光素子は、基板を備えていた（実施の形
態２では、光学素子１０が基板を兼ねていた）が、本発
明に係る発光素子は、これに限定されるものではなく、
基板を有さなくてもよい。また、上記実施の形態に係る
発光素子を任意の面積の基板全面に形成することで、バ
ックライト等の照明装置を作製することができる。(Other Matters) The light emitting device according to the above-mentioned embodiment is an organic EL device using an organic compound as a light emitting layer. For example, a light emitting layer made of ZnS doped with Mn or the like is used as the light emitting layer. , An inorganic EL element having a structure sandwiched between insulating layers made of Ta 2 O 5 or the like. Further, in the light emitting element according to the above-mentioned embodiment, the optical element 10 is provided on the light extraction surface, but it may be provided in the light emitting element. For example, if the first embodiment is explained,
Although the optical element 10 is provided on the surface of the substrate 1 (corresponding to the light extraction surface), it may be provided in the light emitting element (for example, between the substrate 1 and the transparent electrode 2). Further, the light emitting element according to the above-described embodiment includes the substrate (in Embodiment 2, the optical element 10 also serves as the substrate), but the light emitting element according to the present invention is not limited to this. not,
It may not have a substrate. In addition, by forming the light-emitting element according to any of the above embodiments over the entire surface of the substrate with an arbitrary area, a lighting device such as a backlight can be manufactured.

【００５８】[0058]

【実施例】次に、実施例及び比較例に基づいて本発明を
さらに具体的に説明する。尚、実施例１は前記実施の形
態１に係る発光素子に関し、実施例２は前記実施の形態
３に係る発光素子に関する。EXAMPLES Next, the present invention will be described more specifically based on Examples and Comparative Examples. In addition, Example 1 relates to the light emitting element according to the first embodiment, and Example 2 relates to the light emitting element according to the third embodiment.

【００５９】（実施例１）図５に示すように、実施例１
の発光素子は、透明な基板５１上に、透明電極５２、正
孔輸送材料層５３、発光材料層５４、反射電極５５をこ
の順で積層し、かつ、基板５１の表面（図５の下側表
面）に光学素子１０が貼着されて構成されたものであ
り、つぎのようにして製造した。(Embodiment 1) As shown in FIG.
In the light emitting device of No. 3, a transparent electrode 52, a hole transport material layer 53, a light emitting material layer 54, and a reflective electrode 55 are laminated in this order on a transparent substrate 51, and the surface of the substrate 51 (lower side in FIG. 5). The optical element 10 was attached to the surface) and was manufactured as follows.

【００６０】基板５１として、厚さ０．７ｍｍ、屈折率
１．５のガラス基板を用い、この上にＩＴＯからなる透
明電極５２をスパッタ法により成膜した。ＩＴＯの膜厚
は１００ｎｍとし、フォトリソグラフィにより所望の形
状にパターニングした。次いで、透明電極５２上にＴＰ
Ｄからなる正孔輸送材料層５３、Ａｌｑ3からなる発光
材料層５４、Ｌｉ／Ａｌ積層膜からなる反射電極５５を
それぞれ抵抗加熱蒸着法により成膜した。各層の膜厚
は、正孔輸送材料層５３が５０ｎｍ、発光材料層５４が
５０ｎｍ、反射電極５５がＬｉ／Ａｌ＝１．５ｎｍ／１
５０ｎｍとした。次に、入射角が４２°以上の光を散乱
するシートからなる光学素子５６を基板５１の下側表面
に貼り合わせた。光学素子５６の平均屈折率は、１．７
であった。As the substrate 51, a glass substrate having a thickness of 0.7 mm and a refractive index of 1.5 was used, and a transparent electrode 52 made of ITO was formed thereon by a sputtering method. The ITO film thickness was 100 nm, and the ITO film was patterned into a desired shape by photolithography. Then, TP is formed on the transparent electrode 52.
A hole transport material layer 53 made of D, a light emitting material layer 54 made of Alq 3 , and a reflective electrode 55 made of a Li / Al laminated film were formed by a resistance heating vapor deposition method. The film thickness of each layer is 50 nm for the hole transport material layer 53, 50 nm for the light emitting material layer 54, and Li / Al = 1.5 nm / 1 for the reflective electrode 55.
It was set to 50 nm. Next, the optical element 56 made of a sheet that scatters light having an incident angle of 42 ° or more was attached to the lower surface of the substrate 51. The average refractive index of the optical element 56 is 1.7.
Met.

【００６１】このようにして作製した発光素子の透明電
極５２に＋、反射電極５５に−の電圧を印加したとこ
ろ、透明電極側から緑色発光（ピーク波長：５５０ｎ
ｍ）が確認でき、この時の電流効率（ｃｄ／Ａ）は、後
記の表１に示す値であった。When a voltage of + was applied to the transparent electrode 52 and a voltage of − was applied to the reflective electrode 55 of the light emitting device thus manufactured, green light emission (peak wavelength: 550n
m) was confirmed, and the current efficiency (cd / A) at this time was the value shown in Table 1 below.

【００６２】（実施例２）図６に示すように、実施例２
の発光素子は、基板６１上に、反射電極６２、発光材料
層６３、正孔輸送材料層６４、透明電極６５、バッファ
層６６、保護層６７、をこの順で積層し、かつ、保護層
６７上に光学素子１０が貼着されて構成されたものであ
り、つぎのようにして製造した。(Embodiment 2) As shown in FIG.
In the light emitting device of No. 3, a reflective electrode 62, a light emitting material layer 63, a hole transporting material layer 64, a transparent electrode 65, a buffer layer 66, and a protective layer 67 are laminated in this order on a substrate 61, and a protective layer 67 is provided. The optical element 10 was adhered on the above, and was manufactured as follows.

【００６３】基板６１として、厚さ０．７ｍｍのガラス
基板を用い、この上に反射電極６２として、Ａｌをスパ
ッタ法により成膜した。Ａｌの膜厚は約１５０ｎｍと
し、フォトリソグラフィーにより所望の形状にパターニ
ングした後、Ｌｉを１．５ｎｍ抵抗加熱蒸着法により成
膜した。次いで、反射電極６２上に、Ａｌｑ3からなる
発光材料層６３、ＴＰＤからなる正孔輸送材料層６４、
銅フタロシアニンからなるバッファ層６６をそれぞれ抵
抗加熱蒸着法により成膜した。各層の膜厚は、発光材料
層６３が５０ｎｍ、正孔輸送材料層６４が５０ｎｍ、バ
ッファ層６６が５ｎｍであった。この上に、ＩＴＯから
なる透明電極６５、ＳｉＯ2からなる保護層６７を、続
けてスパッタ法により成膜した。成膜は室温で行い、膜
厚はそれぞれ１００ｎｍとした。A glass substrate having a thickness of 0.7 mm was used as the substrate 61, and Al was formed as a reflective electrode 62 on this by a sputtering method. The film thickness of Al was about 150 nm, and after patterning into a desired shape by photolithography, Li was formed into a film by a resistance heating vapor deposition method of 1.5 nm. Then, on the reflective electrode 62, a light emitting material layer 63 made of Alq 3 , a hole transporting material layer 64 made of TPD,
A buffer layer 66 made of copper phthalocyanine was formed by a resistance heating vapor deposition method. The thickness of each layer was 50 nm for the light emitting material layer 63, 50 nm for the hole transporting material layer 64, and 5 nm for the buffer layer 66. A transparent electrode 65 made of ITO and a protective layer 67 made of SiO 2 were successively formed thereon by sputtering. The film formation was performed at room temperature and the film thickness was 100 nm.

【００６４】次に、入射角が４０°以上の光を散乱する
シートからなる光学素子１０を保護層６７上に貼り合わ
せた。Next, the optical element 10 made of a sheet that scatters light having an incident angle of 40 ° or more was attached to the protective layer 67.

【００６５】このようにして作製した発光素子の透明電
極６５に＋、反射電極６２に−の電圧を印加したとこ
ろ、透明電極側から緑色発光（ピーク波長：５５０ｎ
ｍ）が確認でき、この時の電流効率（ｃｄ／Ａ）は、後
記の表１に示す値であった。When a voltage of + was applied to the transparent electrode 65 of the light emitting element thus manufactured and a voltage of − was applied to the reflective electrode 62, green light emission (peak wavelength: 550 n
m) was confirmed, and the current efficiency (cd / A) at this time was the value shown in Table 1 below.

【００６６】（比較例１）光学素子１０を設けないこと
を除いて、実施例１と同様にして、発光素子を製造し
た。そして、この比較例１の発光素子の透明電極５２に
＋、反射電極５５に−の電圧を印加したところ、電流効
率（ｃｄ／Ａ）は、後記の表１に示す値であった。Comparative Example 1 A light emitting device was manufactured in the same manner as in Example 1 except that the optical element 10 was not provided. Then, when a voltage of + was applied to the transparent electrode 52 and a voltage of − was applied to the reflective electrode 55 of the light emitting device of Comparative Example 1, the current efficiency (cd / A) was the value shown in Table 1 below.

【００６７】（比較例２）光学素子１０を設けないこと
を除いて、実施例２と同様にして、発光素子を製造し
た。そして、この比較例２の発光素子の透明電極６５に
＋、反射電極６２に−の電圧を印加したところ、電流効
率（ｃｄ／Ａ）は、後記の表１に示す値であった。Comparative Example 2 A light emitting device was manufactured in the same manner as in Example 2 except that the optical element 10 was not provided. Then, when a voltage of + was applied to the transparent electrode 65 and a voltage of − was applied to the reflective electrode 62 of the light emitting device of Comparative Example 2, the current efficiency (cd / A) was the value shown in Table 1 below.

【００６８】上記実施例１，２及び比較例１，２の評価
結果を（表１）に示す。The evaluation results of Examples 1 and 2 and Comparative Examples 1 and 2 are shown in (Table 1).

【００６９】[0069]

【表１】 [Table 1]

【００７０】表１より明らかなように、実施例１は比較
例１よりも、電流効率が約２．３倍高い。また、実施例
２は比較例２よりも、電流効率が約２．２倍高い。よっ
て、光学素子を有することにより、発光効率が格段に向
上することが理解される。As is clear from Table 1, the current efficiency of Example 1 is about 2.3 times higher than that of Comparative Example 1. Moreover, the current efficiency of Example 2 is about 2.2 times higher than that of Comparative Example 2. Therefore, it is understood that the luminous efficiency is remarkably improved by including the optical element.

【００７１】[0071]

【発明の効果】以上説明したように、本発明によれば、
光取り出し面への入射角が臨界角以上の光を散乱させる
光学素子を設けることにより、光の取り出し効率を向上
させ、発光効率を向上させることができる。As described above, according to the present invention,
By providing an optical element that scatters light having an incident angle on the light extraction surface of a critical angle or more, the light extraction efficiency can be improved and the light emission efficiency can be improved.

【００７２】また、本発明によれば、発光層と光学素子
との距離ｔと、１画素の幅長Ｌとを、式（１）を満たす
よう設定することにより、漏れ光による画像のにじみを
可及的に低減することができる。Further, according to the present invention, the distance t between the light emitting layer and the optical element and the width L of one pixel are set so as to satisfy the expression (1), so that the image bleeding due to the leaked light is prevented. It can be reduced as much as possible.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の実施の形態１に係る発光素子を模式的
に示す断面図である。FIG. 1 is a sectional view schematically showing a light emitting device according to a first embodiment of the present invention.

【図２】本発明の実施の形態２に係る発光素子を模式的
に示す断面図である。FIG. 2 is a sectional view schematically showing a light emitting device according to a second embodiment of the present invention.

【図３】本発明の実施の形態３に係る発光素子を模式的
に示す断面図である。FIG. 3 is a sectional view schematically showing a light emitting device according to a third embodiment of the present invention.

【図４】本発明の実施の形態４に係る表示装置における
１画素の構成を模式的に示す断面図である。FIG. 4 is a sectional view schematically showing a configuration of one pixel in a display device according to a fourth embodiment of the present invention.

【図５】本発明の実施例１に係る発光素子を模式的に示
す断面図である。FIG. 5 is a sectional view schematically showing a light emitting device according to Example 1 of the present invention.

【図６】本発明の実施例２に係る発光素子を模式的に示
す断面図である。FIG. 6 is a sectional view schematically showing a light emitting device according to Example 2 of the present invention.

【図７】従来の有機ＥＬ素子を模式的に示す断面図であ
る。FIG. 7 is a sectional view schematically showing a conventional organic EL element.

【図８】従来の無機ＥＬ素子を模式的に示す断面図であ
る。FIG. 8 is a sectional view schematically showing a conventional inorganic EL element.

【図９】従来の発光素子における光の取り出しを示す概
念図である。FIG. 9 is a conceptual diagram showing extraction of light in a conventional light emitting element.

【符号の説明】[Explanation of symbols]

１，５１，６１ ：基板 ２，５２ ：透明電極（透明な第１電極層） ３ ：発光層 ４，５５ ：反射電極（光反射性の第２電極層） １０ ：光学素子１０ １１，６２ ：反射電極（光反射性の第１電極層） １２，６５ ：透明電極（透明な第２電極層） ５３，６３ ：発光材料層 ５４，６４ ：正孔輸送材料層 ６６ ：バッファ層 ６７ ：保護層 1,51,61: substrate 2,52: transparent electrode (transparent first electrode layer) 3: Light emitting layer 4, 55: reflective electrode (light reflective second electrode layer) 10: Optical element 10 11, 62: reflective electrode (light reflective first electrode layer) 12, 65: Transparent electrode (transparent second electrode layer) 53, 63: Light emitting material layer 54, 64: hole transporting material layer 66: buffer layer 67: protective layer

フロントページの続き (72)発明者 濱野 敬史 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 3K007 AB03 AB18 BB02 BB06 CB01 CC01 DA02 DB02 DB03 EA02 EC04 FA00 Continued front page    (72) Inventor, Takashi Hamano             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 3K007 AB03 AB18 BB02 BB06 CB01                       CC01 DA02 DB02 DB03 EA02                       EC04 FA00

Claims (13)

【特許請求の範囲】[Claims] 【請求項１】少なくとも第１の電極層と第２の電極層間
に挟持された発光層を備えた積層構造であり、前記発光
層で発光した光を、発光層と離隔した光取り出し面より
外部に取り出す発光素子であって、 前記発光素子中又は前記光取り出し面に、前記発光層で
発生した光のうち、前記光取り出し面への入射角が臨界
角以上の光は散乱させ、臨界角未満の光はそのまま透過
させる機能を有する光学素子が、設けられていることを
特徴とする発光素子。1. A laminated structure comprising a light emitting layer sandwiched between at least a first electrode layer and a second electrode layer, wherein the light emitted from the light emitting layer is external to a light extraction surface separated from the light emitting layer. A light emitting element to be extracted into, in the light emitting element or on the light extraction surface, of the light generated in the light emitting layer, the incident angle to the light extraction surface is a critical angle or more light is scattered, less than the critical angle A light-emitting element, which is provided with an optical element having a function of directly transmitting the light. 【請求項２】透明な基板上に、透明な第１の電極層と、
発光層と、光反射性の第２の電極層とをこの順で備え、
前記発光層で発光した光を、前記透明基板側の前記発光
層と離隔した光取り出し面より、外部に取り出す発光素
子であって、 前記発光層で発生した光のうち、前記光取り出し面への
入射角が臨界角以上の光は散乱させ、臨界角未満の光は
そのまま透過させる機能を有する光学素子が、前記透明
基板側の光取り出し面に設けられていることを特徴とす
る発光素子。2. A transparent first electrode layer on a transparent substrate,
A light emitting layer and a light reflective second electrode layer in this order,
A light-emitting element for extracting light emitted from the light-emitting layer to the outside from a light-extracting surface separated from the light-emitting layer on the transparent substrate side, wherein light emitted to the light-extracting surface out of the light emitted from the light-emitting layer A light emitting device, wherein an optical element having a function of scattering light having an incident angle of a critical angle or more and transmitting light of less than the critical angle as it is is provided on the light extraction surface on the transparent substrate side. 【請求項３】基板上に、光反射性の第１の電極層と、発
光層と、透明な第２の電極層とをこの順で備え、前記発
光層で発光した光を、前記第２電極層側の、前記発光層
と離隔した光取り出し面より外部に取り出す発光素子で
あって、 前記発光層で発生した光のうち、前記光取り出し面への
入射角が臨界角以上の光は散乱させ、臨界角未満の光は
そのまま透過させる機能を有する光学素子が、前記第２
電極層側の光取り出し面に設けられていることを特徴と
する発光素子。3. A light-reflecting first electrode layer, a light-emitting layer, and a transparent second electrode layer are provided in this order on a substrate, and the light emitted from the light-emitting layer is emitted from the second electrode layer. A light-emitting element that extracts light from a light extraction surface on the electrode layer side that is separated from the light-emitting layer, and out of light generated in the light-emitting layer, light whose incident angle to the light extraction surface is a critical angle or more is scattered. And the optical element having a function of transmitting light less than the critical angle as it is
A light emitting element, which is provided on a light extraction surface on the side of an electrode layer. 【請求項４】透明な基板上に、透明な第１の電極層と、
発光層と、光反射性の第２の電極層とをこの順で備え、
前記発光層で発光した光を、前記透明基板側の前記発光
層と離隔した光取り出し面より、外部に取り出す発光素
子であって、 前記透明基板は、前記発光層で発生した光のうち、前記
光取り出し面への入射角が臨界角以上の光は散乱させ、
臨界角未満の光はそのまま透過させる機能を有する光学
素子で構成されていることを特徴とする発光素子。4. A transparent first electrode layer on a transparent substrate,
A light emitting layer and a light reflective second electrode layer in this order,
A light-emitting element that extracts light emitted from the light-emitting layer from a light-extraction surface separated from the light-emitting layer on the transparent substrate side to the outside, wherein the transparent substrate is one of the light generated in the light-emitting layer. Light with an incident angle on the light extraction surface of a critical angle or more is scattered,
A light-emitting element comprising an optical element having a function of directly transmitting light below a critical angle. 【請求項５】前記第２電極層と前記光学素子との間に、
保護層が形成されている請求項３記載の発光素子。5. Between the second electrode layer and the optical element,
The light emitting device according to claim 3, wherein a protective layer is formed. 【請求項６】前記光学素子は、シート状に形成されてお
り、その厚み方向に屈折率が分布した構造となっている
請求項１乃至５の何れかに記載の発光素子。6. The light emitting element according to claim 1, wherein the optical element is formed in a sheet shape, and has a structure in which a refractive index is distributed in a thickness direction thereof. 【請求項７】前記光学素子の平均屈折率が、前記光学素
子が接する層のうち、発光層側にある層の屈折率よりも
高い請求項６記載の発光素子。7. The light emitting device according to claim 6, wherein an average refractive index of the optical device is higher than a refractive index of a layer on the light emitting layer side of layers in contact with the optical device. 【請求項８】前記発光層が有機化合物からなる請求項１
乃至７の何れかに記載の発光素子。8. The light emitting layer is made of an organic compound.
8. The light emitting device according to any one of 7 to 7. 【請求項９】複数の画素を有し、各画素は請求項１乃至
８の何れかに記載の発光素子で構成された表示装置であ
って、 前記発光層と前記光学素子との距離をｔ、１画素の幅を
Ｌ、前記光取り出し面における臨界角をθc、前記発光
層の屈折率をｎとした場合、下記の式（１）を満たして
いることを特徴とする表示装置。 ｔ＜（ｎｃｏｓθc／２）×Ｌ …（１）9. A display device comprising a plurality of pixels, each pixel comprising the light emitting element according to claim 1, wherein a distance between the light emitting layer and the optical element is t. When the width of one pixel is L, the critical angle at the light extraction surface is θc, and the refractive index of the light emitting layer is n, the following formula (1) is satisfied: t <(ncos θc / 2) × L (1) 【請求項１０】透明な基板上に、透明な第１の電極層
と、発光層と、光反射性の第２の電極層とをこの順で備
え、前記発光層で発光した光を、前記透明基板側の前記
発光層と離隔した光取り出し面より、外部に取り出す発
光素子の製造方法であって、 透明な基板上に透明な第１の電極層を形成する工程と、 第１の電極層上に発光層を形成する工程と、 発光層上に光反射性の第２の電極層を形成する工程と、 基板表面に、光取り出し面への入射角が臨界角以上の光
は散乱させ臨界角未満の光はそのまま透過させる機能を
有する光学素子を形成する工程と、 を有することを特徴とする発光素子の製造方法。10. A transparent first electrode layer, a light emitting layer, and a light-reflecting second electrode layer are provided in this order on a transparent substrate, and the light emitted from the light emitting layer is converted into A method for manufacturing a light-emitting device, which is extracted from a light extraction surface separated from the light-emitting layer on the transparent substrate side, the method comprising: forming a transparent first electrode layer on a transparent substrate; and a first electrode layer. A step of forming a light emitting layer on top, a step of forming a light-reflecting second electrode layer on the light emitting layer, and a step of scattering light that has an incident angle to the light extraction surface above the critical angle on the substrate surface And a step of forming an optical element having a function of transmitting light less than a corner as it is, and a method of manufacturing a light emitting element. 【請求項１１】基板上に、光反射性の第１の電極層と、
発光層と、透明な第２の電極層とをこの順で備え、前記
発光層で発光した光を、前記第２電極層側の、前記発光
層と離隔した光取り出し面より外部に取り出す発光素子
の製造方法であって、 基板上に光反射性の第１の電極層を形成する工程と、 第１の電極層上に発光層を形成する工程と、 発光層上に透明な第２の電極層を形成する工程と、 第２の電極層上に、光取り出し面への入射角が臨界角以
上の光は散乱させ臨界角未満の光はそのまま透過させる
機能を有する光学素子を形成する工程と、 を有することを特徴とする発光素子の製造方法。11. A light-reflecting first electrode layer on a substrate,
A light-emitting element that includes a light-emitting layer and a transparent second electrode layer in this order, and extracts the light emitted from the light-emitting layer to the outside from a light extraction surface on the second electrode layer side that is separated from the light-emitting layer. And a step of forming a light-reflective first electrode layer on the substrate, a step of forming a light-emitting layer on the first electrode layer, and a transparent second electrode on the light-emitting layer. A step of forming a layer, and a step of forming, on the second electrode layer, an optical element having a function of scattering light having an incident angle on the light extraction surface of a critical angle or more and transmitting light of less than the critical angle as it is. A method for manufacturing a light-emitting element, comprising: 【請求項１２】前記第２の電極層と前記光学素子との間
に保護層を形成する工程を有する請求項１１記載の発光
素子の製造方法。12. The method for manufacturing a light emitting element according to claim 11, further comprising the step of forming a protective layer between the second electrode layer and the optical element. 【請求項１３】前記光学素子を形成する工程が、シート
状光学素子を張り合わせることにより、光学素子を形成
することである請求項１０乃至１２の何れかに記載の発
光素子の製造方法。13. The method for manufacturing a light emitting device according to claim 10, wherein the step of forming the optical element is to form the optical element by laminating sheet-like optical elements.
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