JP2003224304A - Light-emitting device - Google Patents

Light-emitting device

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JP2003224304A
JP2003224304A JP2002058040A JP2002058040A JP2003224304A JP 2003224304 A JP2003224304 A JP 2003224304A JP 2002058040 A JP2002058040 A JP 2002058040A JP 2002058040 A JP2002058040 A JP 2002058040A JP 2003224304 A JP2003224304 A JP 2003224304A
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light
emitting device
phosphor
lt
emission
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JP2002058040A
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Japanese (ja)
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Tsunemasa Taguchi
Masahiko Yoshino
正彦 吉野
常正 田口
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Kasei Optonix Co Ltd
化成オプトニクス株式会社
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Priority to JP2002058040A priority Critical patent/JP2003224304A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device as a multi-colored light source in place of a fluorescent lamp having high luminance and power saving without using a harmful substance such as mercury as a component. <P>SOLUTION: In the light-emitting device with the light source for excitation displaying an emission having the peak wavelength (λ) of an emission spectrum in a near ultraviolet or short wavelength visible region and a phosphor arranged at a place where the emission from the light source for excitation can be absorbed, and absorbing at least a part of the emission from the light source for excitation and displaying the emission of the peak wavelength different from at least a part of the emission, a parent body composition is shown by (Zn<SB>1-a</SB>, Cd<SB>a</SB>)S in the fluorescence, and a sulfide phosphor having the relationship of 3.375-(1250/λ)<a<3.75--(1250/λ) and 0≤a<1 between a value (a) and a value λ represented at a nanometer (nm) unit is obtained. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】 【0001】 【発明が属する技術分野】本発明は近紫外線または短波長可視域の発光をする励起用光源と蛍光体との組合わせにより種々の発光色の発光を呈し、照明用やデイスプレイ用として用いられる発光装置に関する。 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to] exhibits a light emission of different emission colors by a combination of an excitation light source and a phosphor for emission of near-ultraviolet or short wavelength visible region relates to a light emitting device used as a lighting and Deisupurei. 【0002】 【従来の技術】蛍光体の代表的な用途の1つとして蛍光ランプが知られていて、古くから照明やディスプレイとして実用されている。 [0002] optionally fluorescent lamp as one typical application of the phosphor is known, are practically as an illumination or a display for a long time. 周知のように蛍光ランプはガラス管の内壁に形成された蛍光体からなる蛍光膜が該ガラス管内に封入された水銀の放電によって発生する紫外線で励起された際に蛍光膜が発する発光を照明用等の光源として利用するものである。 Lighting the fluorescent lamp emits fluorescent film when a fluorescent film made of a phosphor formed on the inner wall of the glass tube is excited by ultraviolet rays generated by the discharge of mercury encapsulated in the glass tube emission as known it is utilized as the light source and the like. 【0003】ところで、近年、環境問題や省電力の観点から水銀を使用せず、より消費電力の少ない照明用の光源として、水銀の放電による紫外線に代えて発光ダイオード(LED)や半導体レーザー(LD)による発光光を励起用光源として用い、これと蛍光体とを組合わせることによってLEDやLDからの発光で直接蛍光体を励起して発光させる光源が開発されている。 In recent years, without using mercury from the viewpoint of environmental issues and saving, as more light sources for illumination with low power consumption, light-emitting diodes in place of the UV due to the discharge of mercury (LED) and semiconductor lasers (LD ) light source for emitting light by exciting a direct phosphor emission from the LED or LD has been developed by which the emitted light is used as excitation light source, combining this with the phosphor by. 例えば、特許第2,927,279号公報には、LEDチップが発する青色系の可視光と、このLEDチップの青色系の発光の一部を吸収して発光するCe付活希土類アルミノガリウム酸塩蛍光体からの黄色系の発光との加色混合によって全体として白色系の発光を呈する発光ダイオードが開示されている。 For example, Japanese Patent No. 2,927,279 discloses a blue visible light LED chip emits, Ce activated rare earth aluminosilicate gallates that emits light by absorbing a part of blue light emission of the LED chip emitting diodes emit light of white is disclosed generally by the additive color mixing of the light emission of yellow from the phosphor. しかしながら、従来のLED等の励起用光源と蛍光体とを組み合わせたタイプの光源では、LE However, in the conventional type of light source that combines the excitation light source and a phosphor such as LED, LE
D等の励起用光源の発光波長が限定されているため、用いられる励起用光源により発光し得る蛍光体の種類が極めて限られていることや、光源としての発光色が白色系に限定される等の制約があった。 Since the limited emission wavelength of the excitation light source, such as D, it and the type of phosphor is very limited, the emission color of the light source is limited to the white which can emit light by the excitation light source to be used there was a constraint and the like. 【0004】近年、光源このようなタイプの励起源として使用し得るLED等の励起用光源側の発光波長領域が拡大されると共に、照明の分野に限らずディスプレイ用等、光源としての用途の多様化と共に、白色の外に白色以外の発光色の光源に対するニーズが広がるに伴って蛍光ランプに代わる、水銀を使用しない省電力の多色光源の開発が望まれるようになった。 Recently, a light source with an emission wavelength region of the excitation light source side of the LED or the like that can be used is enlarged as the excitation source of this type, such as for not only the field of lighting displays, a variety of applications as a light source together with alternative to fluorescent lamps with the spread need for white outside other than white color of light emitted by the light source, it came to develop power saving polychromatic light source that does not use mercury are desired. 【0005】 【発明が解決しようとする課題】そこで、本発明は構成要素として水銀などの有害物質を使用せず、高輝度、省消費電力の蛍光ランプに代わる多色光源としての発光装置を提供することを目的とする。 [0005] The present invention To solve the above problems, the present invention does not use toxic substances such as mercury as a component, provides a high brightness, a light emitting device as polychromatic light source in place of the fluorescent lamp power saving an object of the present invention is to. 【0006】 【課題を解決するための手段】本発明者らは、上記目的達成のため、種々の蛍光体について、これを励起するための各種励起用光源により各蛍光体を発光させてみることによって、効率良く発光する光源となり得る蛍光体と励起用光源との組合について詳細に探索、検討した結果、ZnとCdとの固溶比の異なる硫化物を母体とする硫化物系蛍光体と、近紫外ないし短波長可視波長域に発光を呈する励起用光源とを組み合わせた時、該蛍光体母体のZnとCdとの固溶割合と励起用光源の発光ピーク波長との間にある一定の相関関係にある硫化物系蛍光体と励起用光源とを組合わせた時に限り、特に用いられる蛍光体に固有の発光色を有する高輝度の発光を呈する発光装置が得られ、所望の発光色に発光する光源となり得ること [0006] Means for Solving the Problems The present inventors have, for the purposes achieved for various phosphors, to try to emit light each phosphor by various exciting light source for exciting this by efficiently search in detail union phosphor that can be a light source emitting and light source for excitation, consider a result, a sulfide phosphor different sulfide of solid solution ratio of Zn and Cd and maternal when combining the excitation light source that emits light in the near ultraviolet or short wavelength visible wavelength range, certain correlation is between the solid solution ratio of Zn and Cd of the fluorescent substance matrix and the emission peak wavelength of the excitation light source only when a combination of sulfide fluorescent substance having the relationship between the excitation light source, the light emitting device is obtained which exhibits light emission with high luminance having a specific emission color in particular phosphor used, emitting a desired emission color it can become a light source to が分かり本発明に至った。 It is to understand led to the present invention. 【0007】本発明の発光装置は下記の構成を有する。 [0007] The light emitting device of the present invention has the following constitution. (1)近紫外ないし短波長可視域に発光スペクトルのピーク波長(λ)をもった発光を呈する励起用光源と、該励起用光源からの発光を吸収し得る位置に配置されて、 (1) is disposed at a position capable of absorbing the excitation light source that emits light having a peak wavelength of the emission spectrum in the near-ultraviolet to short wavelength visible region (lambda), the emission from 該励 appointment source,
該励起用光源からの前記発光の少なくとも1部を吸収してこれとは異なるピーク波長の発光を呈する蛍光体とを具備する発光装置であって、前記蛍光体は、母体組成が(Zn 1−a ,Cd )Sで表され、かつ、前記a値とナノメータ(nm)単位で表した前記λ値との間に、 To this by absorbing at least a portion of light emitted from the該励appointed light source a light-emitting device comprising a phosphor which emits light of different peak wavelengths, wherein the phosphor matrix composition (Zn 1- a, represented by Cd a) S, and between the λ value expressed in the a value and the nanometer (nm) units,
3.375−(1250/λ)<a<3.75−125 3.375- (1250 / λ) <a <3.75-125
0/λ及び0≦a<1なる関係を有する硫化物系蛍光体であることを特徴とする発光装置(請求項1の発明)。 0 / lambda and a light-emitting device which is a sulfide-based phosphor having a 0 ≦ a <1 the relationship (the invention of claim 1). 【0008】(2)前記励起用光源の発光スペクトルのピーク波長(λ)が300〜500nmであることを特徴とする前記(1)記載の発光装置(請求項2の発明)。 [0008] (2) (the invention of claim 2) wherein the peak wavelength of the emission spectrum of the excitation light source (lambda) is characterized in that it is a 300 to 500 nm (1) light-emitting device according. (3)前記励起用光源の発光スペクトルのピーク波長(λ)が370〜480nmであることを特徴とする前記(2)記載の発光装置(請求項3の発明)。 (3) (the invention of claim 3) wherein the peak wavelength of the emission spectrum of the excitation light source (lambda) is characterized in that it is a 370~480Nm (2) light-emitting device according. 【0009】(4)前記励起用光源が発光ダイオード(LED)、半導体レーザー、電場発光装置(EL)の中の少なくとも1種であることを特徴とする前記(1) [0009] (4) the excitation light source is a light emitting diode (LED), semiconductor laser, electroluminescent device wherein characterized in that at least one among (EL) (1)
〜(3)のいずれかに記載の発光装置(請求項4の発明)。 The light emitting device according to any one of the - (3) (the invention of claim 4). (5)前記硫化物系蛍光体の付活剤が銀(Ag)、金(Au)、銅(Cu)及びマンガン(Mn)の中の少なくとも1つであることを特徴とする前記(1)〜(4) (5) the active agent with the sulfide-based phosphor is a silver (Ag), gold (Au), copper (Cu) and manganese above, wherein the at least one of (Mn) (1) - (4)
のいずれかに記載の発光装置(請求項5の発明)。 The light emitting device according to any one of (the invention of claim 5). 【0010】 【発明の実施の形態】本発明の発光装置は、nm単位で表された発光スペクトルのピーク波長がλである発光を呈する励起用光源と、母体の組成比が{(Zn 1−a [0010] The light emitting device of the present invention DETAILED DESCRIPTION OF THE INVENTION, the excitation light source having a peak wavelength of the emission spectrum, expressed in nm units emit light is lambda, the composition ratio of maternal {(Zn 1- a,
Cd )S}で表され、前記励起用光源の発光ピーク波長λと該蛍光体母体中のCdの固溶割合(a)との間に、3.375−(1250/λ)<a<3.75− Represented by Cd a) S}, between the solid solution ratio of Cd in the emission peak wavelength lambda and the phosphor in the matrix of the excitation light source (a), 3.375- (1250 / λ) <a < 3.75-
(1250/λ)(但し、0<a≦1である)なる相関関係を有する硫化物系蛍光体とが対にして用いられる以外は、例えば、励起用光源として発光ダイオード(LE (1250 / λ) (where, 0 <a is a ≦ 1) except that the sulfide phosphor having become correlated used in pairs, for example, light emitting diodes (LE as an excitation light source
D)を用い、この励起用光源と光学的に結合させた蛍光体との組合わせからなる従来の発光装置と同様の構成を有する。 With D), it has the same configuration as a conventional light-emitting device comprising a combination of the excitation light source and optically coupled to form the phosphor. 【0011】図1は、本発明の発光装置の構成成分として用いられる硫化物系蛍光体の1例である、(Zn [0011] Figure 1 is an example of the sulfide phosphor used as a component of a light-emitting device of the present invention, (Zn
0.6 ,Cd 0.4 )S:Ag,Cl蛍光体に波長が3 0.6, Cd 0.4) S: Ag , wavelength Cl phosphor 3
00〜470nmの励起光を照射して、その時に蛍光体が被照射面から発する発光を検出した時、励起光の波長(λ)と発光量(S)との相関を示すグラフである。 By irradiating excitation light 00~470Nm, when the phosphor of the detection of luminescence emanating from the irradiated surface at that time is a graph showing the correlation of the wavelength of the excitation light and (lambda) and the light emission amount (S).
なお、図1において、縦軸の発光量(S)は、キセノンランプからの光をモノクロメーター(JOBIN YV In FIG. 1, the light emission amount of the vertical axis (S) is a light from a xenon lamp monochromator (JOBIN YV
ON社製、H−10型)を用いて分光し、0.5mmのスリットを通過した光を励起光として各蛍光体試料に照射し、その時の光を積分球で集光してその光量を光電計(大塚電子製,MCPD−2000型)で測光してこの時の発光量(S)とした。 ON Co., spectrally using H-10 type), it is irradiated to each phosphor sample the light that has passed through the 0.5mm slit as excitation light, the light amount by condensing light at that time in the integrating sphere photoelectric meter (manufactured by Otsuka Electronics Co., MCPD-2000 model) was light emission amount at this time was photometry with (S). 従って、ここでいう発光量(S)は、蛍光体自身の発光の外に、照射された励起光の蛍光体試料面からの反射光をも含んだ総光量である。 Therefore, the light emission amount here (S) is outside of the light emission of the phosphor itself, the total amount including also the light reflected from the phosphor sample surface of the irradiated excitation light. 【0012】図1から、(Zn 0.6 ,Cd 0.4 [0012] From FIG. 1, (Zn 0.6, Cd 0.4 )
S:Ag,Cl蛍光体では、約390nmの励起光を照射した時の発光量(S)が最大である励起波長λ (以下、ある蛍光体を励起した時の発光量Sが最大となるときの励起光の波長をλ とする)がおよそ390nmであることが分かる。 S: Ag, the Cl phosphor, light emission amount when irradiated with excitation light of about 390 nm (S) is the excitation wavelength lambda P (hereinafter the maximum light emission amount S is maximum when excited certain phosphor it can be seen is referred to as lambda P wavelength) of excitation light when it is approximately 390 nm. 【0013】そこで、図1に示した(Zn 0.6 ,Cd [0013] Therefore, as shown in FIG. 1 (Zn 0.6, Cd
0.4 )S:Ag,Cl蛍光体の場合と同様にして、母体組成が(Zn 1−a ,Cd )Sであり、これに銀(Ag)、金(Au)又は銅(Cu)を付活し、これに塩素(Cl)又はアルミニウム(Al)を共付活剤した複数の硫化物系蛍光体を製造し、蛍光体母体中のCdの固溶割合(a)や付活剤の種類の異なる種々の硫化物系蛍光体に波長が330〜500nmのピーク波長を有する発光を呈する励起光を照射して、これら各硫化物系蛍光体の母体中のCdの固溶割合(a値)とその蛍光体の発光量(S)が最大となるときの励起光の波長(λ 0.4) S: Ag, as in the case of Cl phosphor matrix composition (Zn 1-a, a Cd a) S, which silver (Ag), gold (Au) or copper (Cu) was activated, which chlorine (Cl) or aluminum (Al) to produce a plurality of sulfide-based phosphors coactivator, solid solution ratio of Cd in the phosphor matrix (a) and activator by irradiating excitation light wavelength for various sulfide phosphors having different kinds of the exhibits emission with a peak wavelength of 330 to 500 nm, the solid solution ratio of Cd in maternal of the sulfide phosphor (a value) and light emission amount of the phosphor (wavelength of the excitation light when the S) is maximum (lambda P)
とをそれぞれ測定したところ、表1に示したような結果が得られた。 Preparative were measured respectively, results as shown in Table 1 were obtained. 【0014】 【表1】 [0014] [Table 1] 【0015】表1に示した測定結果から、これらの硫化物系蛍光体に波長(λ )の励起光が照射された場合、 [0015] From the measurement results shown in Table 1, if the pumping light of the wavelength (lambda P) to these sulfide phosphors are irradiated,
励起光の波長(λ )の逆数(1/λ )と、各硫化物系蛍光体母体におけるCdの固溶割合(a)との関係をプロットすると、各測定点は、ほぼ図2に示した直線A The reciprocal of the wavelength of the excitation light (λ P) (1 / λ P), is plotted the relationship between the solid solution ratio of Cd in the sulfide fluorescent substance matrix (a), each measurement point is approximately 2 straight line a shown
上にあり、励起光のピーク波長(λ )の逆数(1/λ Is above, the inverse of the peak wavelength of the excitation light (λ P) (1 / λ
)とCdの固溶割合(a)との間には、 1/λ =−0.0008a+0.0028 …………(1) なる相関があることが分かった。 Between P) and Cd solid solution ratio of (a), was found to be 1 / λ P = -0.0008a + 0.0028 ............ (1) becomes correlation. 【0016】なお、硫化物系蛍光体の付活剤が銀(A [0016] In addition, the activator of the sulfide-based phosphor is silver (A
g)、金(Au)又は銅(Cu)以外であっても、また、共付活剤が塩素(Cl)又はアルミニウム(Al) g), gold (Au) or copper (be other than Cu), also with a co-activator is chlorine (Cl) or aluminum (Al)
以外であっても、波長が300〜470nmの波長域にピーク波長を有する励起光を照射して励起した時に発光し得る硫化物系蛍光体であれば、励起波長を変化させた時、最大の発光量(S)を示す時の励起光の波長(λ )と、その硫化物系蛍光体の母体中のCdの固溶割合(a)との間にはほぼ上記式(1)の関係を満たすような相関があることが確認された。 Be other than, if the sulfide based phosphor capable of emitting light when the wavelength is excited by irradiation with excitation light having a peak wavelength in a wavelength range of 300~470Nm, when changing the excitation wavelength maximum of the wavelength of the excitation light when a light emitting amount (S) (lambda P), the relationship almost above formula (1) between the solid solution ratio of Cd in maternal the sulfide-based phosphor (a) that there is a correlation that satisfies was confirmed. 【0017】また、蛍光体を励起する励起光の波長をピーク波長(λ )を中心にこれより長波長側(λ +Δ Further, this longer wavelength side around the peak wavelength (lambda P) the wavelength of the excitation light for exciting the phosphor (λ P + Δ
λ)並びに短波長側(λ −Δλ)に変化させるとその発光量(S)は当然ながら次第に低減するが、この硫化物系蛍光体の発光量(S)がピーク波長(λ )で励起した時のおよそ90%にまで低減される時の励起光の波長を求めて表1に併せて示した。 lambda) and is varied to shorter wavelength side (lambda P -.DELTA..lambda) the light emission amount (S) is naturally reduced gradually, the light emitting amount of the sulfide-based phosphor (S) is the peak wavelength (lambda P) It is shown in Table 1. seeking wavelength of the excitation light when it is reduced to approximately 90% when excited. 表1において、励起光の励起波長(λ MAX )は、励起光の波長がλ よりΔ In Table 1, the excitation wavelength of the excitation light (lambda MAX), the wavelength of the excitation light is from lambda P delta
λだけ長波長側に移動することによって発光量(S)が波長(λ )で励起した時の発光量(S)の90%まで低減した時の励起光の波長であり、一方、(λ MIN is the wavelength of the excitation light when the light emission amount (S) is reduced to 90% of the light emission amount when excited at a wavelength (lambda P) (S) by moving only the long wavelength side lambda, whereas, (lambda MIN)
は、励起光の波長がλ よりΔλだけ短波長側に移動することによって発光量(S)が波長(λ )で励起した時の発光量(S)の90%まで低減した時の励起光の波長である。 The amount of light emission (S) is excited when reduced to 90% of the light emission amount when excited at a wavelength (lambda P) (S) by the wavelength of the excitation light is moved to the short wavelength side Δλ from lambda P it is the wavelength of the light. 即ち、表1に示された各硫化物系蛍光体は、 That is, each sulfide fluorescent substance shown in Table 1,
これを励起する励起光の波長がλ MIN (nm)〜λ The wavelength of the excitation light for exciting this is λ MIN (nm) ~λ
MAX (nm)の波長域範囲にあれば、それぞれの蛍光体が最大の発光量を示す波長(λ )の励起光により励起された時の90%以上の発光量の発光を呈する。 If the wavelength band range of MAX (nm), exhibits light emission of each phosphor is up to 90% or more of the light emission amount when excited by excitation light having a wavelength of a light emitting amount (λ P). 【0018】これらの硫化物系蛍光体にピーク波長(λ [0018] These sulfide phosphor to peak wavelength (λ
)の励起光を照射した場合と同様、表1に示した測定結果から、波長(λ MIN )の励起光が照射された場合、励起光の波長(λ MIN )の逆数(1/λ MIN As in the case of irradiation with excitation light P), from the measurement results shown in Table 1, the wavelength (lambda if excitation light MIN) is irradiated, the inverse (1 / lambda MIN of the wavelength of the excitation light (lambda MIN) )
と、各硫化物系蛍光体母体におけるCdの固溶割合(a)との関係をプロットすると、各測定点は、ほぼ図2に示した直線B上にあり、励起光のピーク波長(λ If, when plotting the relationship between the solid solution ratio of Cd in the sulfide fluorescent substance matrix (a), each measurement point is located on a straight line B shown generally in FIG. 2, the peak wavelength of the excitation light (lambda
MIN )の逆数(1/λ MIN )とCdの固溶割合(a)との間には、 1/λ MIN =−0.0008a+0.0030…………(2) なる相関がある。 Between the solid solution ratio of the reciprocal (1 / lambda MIN) and Cd of MIN) (a), there is 1 / λ MIN = -0.0008a + 0.0030 ............ becomes (2) Correlation. 【0019】また、表1に示した測定結果から、波長(λ MAX )の励起光が照射された場合、励起光の波長(λ MAX )の逆数(1/λ MAX )と、各硫化物系蛍光体母体におけるCdの固溶割合(a)との関係をプロットすると、各測定点は、ほぼ図2に示した直線C上にあり、励起光のピーク波長(λ MAX )の逆数(1/λ Further, from the measurement results shown in Table 1, if the pumping light of the wavelength (lambda MAX) is irradiated, the reciprocal of the wavelength of the excitation light (λ MAX) (1 / λ MAX), the sulfide When plotting the relationship between the solid solution ratio of Cd (a) in the phosphor matrix, each measurement point is located on a straight line C shown generally in FIG. 2, the inverse of the peak wavelength of the excitation light (λ MAX) (1 / λ
MAX )とCdの固溶割合(a)との間には、 1/λ MAx =−0.0008a+0.0027 …………(3) なる相関がある。 Between MAX) and Cd solid solution ratio of (a), 1 / λ MAx = -0.0008a + 0.0027 ............ (3) made are correlated. 【0020】このように、当然のことながら本発明の発光装置では使用される硫化物系蛍光体母体の組成とこの蛍光体の励起用光源の発光波長とのマッチングの程度によって、発光装置としての発光量(S)が変動するが、 [0020] by the degree of this manner, it will be appreciated that the matching between the composition of the sulfide phosphor host used in the light-emitting device of the present invention the emission wavelength of the excitation light source of the phosphor, as a light-emitting device While the light emission amount (S) is varied,
実用的な見地から見て特定組成の硫化物系蛍光体と特定の励起用光源との組み合わせからなる特定の発光装置での発光量(S)の低下許容幅をその組合わせでの最大発光量の10%以下とすると、励起光の波長(λ)の逆数(1/λ)と用いられる硫化物系蛍光体母体中におけるCdの固溶割合(a)との関係が、図2において上記式(1)の相関関係を表わす直線Aを挟む上記式(2)の相関関係を表わす直線Bと上記式(3)の関係を表わす直線Cの間の領域にあるような関係にあることが必要である。 Maximum light emission amount of the light emission amount at a particular light emitting device comprising a combination of a specific light source for excitation and sulphide phosphor of a specific composition when viewed from a practical point of view the reduction allowable width (S) in the combination of the 10% or less, the relationship between the solid solution ratio of Cd in the sulfide-based phosphor in the matrix to be used with the reciprocal of the wavelength of the excitation light (λ) (1 / λ) (a), the above formula 2 (1) correlation above formula sandwiching the straight line a representing the relationship (2) correlation straight line B and the above formula (3) relationship must be in the relationship as in the region between the line C representing the representative of the it is. この図2における直線Bと直線Cとで挟まれる領域は上記式(2)及び(3)から、励起用光源の発光波長λと硫化物系蛍光体母体中のCdの固溶割合aとの関係が【0021】 3.375−(1250/λ)<a<3.75−(1250/λ)……(4) の関係を満たすような励起用光源と母体組成が(Zn From the area sandwiched by the straight line B and the line C in FIG. 2 is the formula (2) and (3), the solid solution ratio a of Cd of the sulfide phosphor matrix and the emission wavelength λ of the excitation light source relationship [0021] 3.375- (1250 / λ) <a <3.75- (1250 / λ) ...... (4) relationship excitation light source and maternal composition which satisfies the (Zn
1−a ,Cd )Sである硫化物系蛍光体との組合わせとするのが実用的な見地から好ましく、特に、 1/λ=−0.0008a+0.0028 …………(1) なる関係を満たすような発光波長を有する励起用光源と母体組成が(Zn 1−a ,Cd )Sである硫化物系蛍光体のと組合わせとするのがより好ましい。 1-a, preferably from a practical standpoint that a combination of a Cd a) is S sulphide phosphor, in particular, 1 / λ = -0.0008a + 0.0028 ............ (1) becomes excitation light source and maternal composition (Zn 1-a, Cd a ) having a light emission wavelength which satisfies the relationship and more preferably, capital combination of the sulfide phosphor is S. なお、ここで、a値は0≦a<1なる条件を満足する数である。 Note that, a value is a number satisfying 0 ≦ a <1 following condition. 【0022】母体組成が(Zn 1−a ,Cd )S(但し、a値は、0≦a<1なる条件を満足する数である) The base composition (Zn 1-a, Cd a ) S ( where, a value is a number satisfying 0 ≦ a <1 The condition)
で表される硫化物系蛍光体は、母体を構成するZnとC In represented by sulfide phosphor, and Zn constituting the matrix C
dとの固溶割合(a値)や付活剤元素の種類によって種々の発光色を呈するので、本発明の発光装置の構成成分の1つとして用いられる蛍光体は、母体組成が(Zn Since it exhibits various luminescent colors depending on the type of solute ratio (a value) and activator element with the d, phosphor used as one of the constituents of the light-emitting device of the present invention, the matrix composition (Zn
1−a ,Cd )S(但し、a値は、0≦a<1なる条件を満足する数である)で表され、この蛍光体のZnとCdとの固溶割合aと、本発明の発光装置のもう一方の構の1つとして用いらる励起用光源の発光波長λとの間に上記式 (4)の関係を保つ範囲内で選択された所望の発光色に応じた固溶割合a及び付活剤元素の硫化物系蛍光体が用いられる。 1-a, Cd a) S (however, a value is represented by a number satisfying 0 ≦ a <1 The condition), and the solid solution ratio a of Zn and Cd of the phosphor, the present invention solid solution corresponding to the desired emission color between the light emission wavelength λ of Mochiiraru excitation light source is selected in a range to maintain the relationship of the above formula (4) as one of the other configuration of the light emitting device sulphide phosphor ratio a and the activating element. そして、特に、これらの硫化物系蛍光体の中でも比較的高輝度の可視域の発光を示す点で、銀(Ag)、金(Au)、銅(Cu)及びマンガン(Mn)のいずれかが付活された硫化物系蛍光体を用いるのがより好ましい。 Then, in particular, in terms of a light emitting relatively high intensity visible region Among these sulfide phosphors, one of silver (Ag), gold (Au), copper (Cu) and manganese (Mn) is and it is more preferable to use the activated sulfide-based phosphor. 【0023】一方、本発明の発光装置の構成成分の1つである励起用光源としては、近紫外〜短波長可視光の波長域に発光する発光体が用いられる。 On the other hand, as the one in which the excitation light source of the constituents of the light-emitting device of the present invention, the light emitter which emits light in a wavelength range of near-ultraviolet to short wavelength visible light is used. この励起用光源である発光体としては、比較的入手し易く、しかも発光効率が高くて、蛍光体をより高輝度に発光させ得る点で、 The light emitter is this excitation light source, relatively easily available, yet higher emission efficiency, in terms of capable of emitting a phosphor with higher brightness,
その発光ピークの波長λが300〜500nm、より好ましくは370〜500nmである発光体が好ましい。 Its wavelength of emission peak λ is 300 to 500 nm, the light emitter is preferably and more preferably 370~500Nm.
これらの発光体としてはGaN、(Ga,In)N、Z These emitters GaN, (Ga, In) N, Z
nSe等の化合物半導体からなる発光ダイオード(LE Light-emitting diodes (LE made of a compound semiconductor such as nSe
D)や半導体レーザー(LD)、ZnS:Cu、Zn D) or a semiconductor laser (LD), ZnS: Cu, Zn
S:Ag等の蛍光体を蛍光体層とする電場発光素子(E S: electroluminescent device phosphor such as Ag and a fluorescent layer (E
L)等が使用され得るが、発光スペクトルの半値幅が極めて狭く、また単位面積当たりの発光量が多く、点光源としても適していて、効率の高い発光を示す点で、発光ダイオード(LED)や半導体レーザー(LD)が特に好ましい。 Although L) or the like can be used, the half-value width of the emission spectrum is very narrow, and many light emission amount per unit area, and also suitable as a point light source, a point indicating a high efficiency light emission, light emitting diode (LED) and semiconductor laser (LD) is particularly preferred. なお、励起用光源としては300〜500n Incidentally, 300~500N as excitation light source
mに発光の主ピークを有する発光を呈する蛍光ランプも用い得ることはいうまでもないが、環境問題等を考慮すると励起用光源として蛍光ランプを用いることは本発明の目的上から好ましくない。 It goes without saying that the fluorescent lamps may also be used to emit light having a main peak of emission in m, but the use of the fluorescent lamp as an excitation light source and to consider the environmental issues and the like is not preferable from the purposes of the present invention. 【0024】本発明の発光装置は、波長λの発光を示す発光体(励起用光源)からの発光を、この励起用光源の発光の波長λと、蛍光体母体中のCdの固溶割合aとの間に上記式(4)の関係にある硫化物系蛍光体が受光して吸収し得るような位置関係にこの両者が対峙するように配置される。 The light emitting device of the present invention, the light emission from the light-emitting materials which emit a light of a wavelength lambda (excitation light source), a wavelength lambda of the light emission of the excitation light source, a solid solution ratio a of Cd in the phosphor matrix sulfide phosphor having a relationship of formula (4) is arranged so as to face this both in the positional relationship as can absorb by receiving between. 【0025】図3は本発明の発光装置の構造概略図の一例であり、ステム1上には半導体発光素子チップ3が電気的に接着されており、一方、半導体発光素子チップ3 [0025] Figure 3 is an example of a structural schematic view of a light-emitting device of the present invention, on the stem 1 is the semiconductor light-emitting element chip 3 are electrically bonded, while the semiconductor light-emitting element chip 3
の他方の電極とリード2の1つとがリード線5により電気的に接続されている。 One of the other electrode and the lead 2 are electrically connected by a lead wire 5. このステム1にはドーム状の透明樹脂被覆蓋体5が固着される。 This is the stem 1 is fixed a transparent resin coating lid 5 of the dome-shaped. そして、この透明樹脂被覆蓋体5の内面には、硫化物系蛍光体を分散させた結合剤が塗布され蛍光体層6が形成されている。 Then, on the inner surface of the transparent resin coating lid 5, a phosphor layer 6 binder having dispersed therein sulphide phosphor is applied it is formed. 透明樹脂被覆蓋体5は、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、ポリスチレンなどの樹脂やガラス等の光に対して透明な材料で構成され、半導体発光素子チップ3の気密封止用キャップの役割を兼ねてステム1に固着されている。 Transparent resin coating lid 5, an epoxy resin, an acrylic resin, a silicone resin, formed of a material transparent to light such as resin or glass such as polystyrene, the role of the hermetic sealing cap of the semiconductor light-emitting element chip 3 doubles and are fixed to the stem 1. リード線2に通電することによって半導体発光素子チップ3が発光し、この発光光が空間層を介して透明樹脂被覆蓋体5の内壁面に形成されている蛍光体層6面に照射され、蛍光体層6がこの半導体発光素子チップ3 Semiconductor light-emitting element chip 3 emits light by energizing the leads 2, the emitted light is irradiated to the phosphor layer 6 surfaces are formed on the inner wall surface of the transparent resin coated lid 5 with the air layer, fluorescent body layer 6 is the semiconductor light-emitting element chip 3
からの発光を吸収して励起され、半導体発光素子チップ3とは異なる発光波長の硫化物系蛍光体に固有の発光を呈する。 Is absorbed to excite the emission from, it exhibits unique luminescent sulfide phosphor of a different emission wavelength from the semiconductor light-emitting element chip 3. 【0026】図4は本発明の発光装置の別の実施例を示す構造概略図の1例であり、本例の発光装置はヘッダー4上に半導体発光素子チップ13をマウントし、リード12に電気的に接続されている。 [0026] Figure 4 is one example of a structural schematic view showing another embodiment of a light-emitting device of the present invention, the light-emitting device of the present embodiment mounts a semiconductor light-emitting element chips 13 on the header 4, electricity leads 12 They are connected to each other. また、半導体発光装置チップ13を覆うように蛍光体を混入した透明樹脂で被覆し、蛍光体層16を形成し、該蛍光体層16の上に透明樹脂をモールドして凸レンズ状の樹脂レンズ15を形成する。 Further, coated with entrained transparent resin of the phosphor so as to cover the semiconductor light emitting device chip 13, to form a phosphor layer 16, by molding a transparent resin on the fluorescent material layer 16 convex lens resin lens 15 to form. 14は半導体発光素子チップ13と電極とを電気的に接続するリード線である。 14 is a lead wire for electrically connecting the semiconductor light-emitting element chip 13 and the electrode. リード12を通じて通電して半導体発光素子チップ13を発光させ、この発光を吸収した半導体発光素子チップ13が励起されて半導体発光素子チップ13とは異なる波長の発光を呈する。 Energized through the lead 12 to the light emitting semiconductor light-emitting element chip 13, the semiconductor light-emitting element chip 13 which has absorbed the emission emits light of a different wavelength from the semiconductor light-emitting element chips 13 are excited.
なお、樹脂レンズ15と蛍光体層16とは一体化し、蛍光体を分散含有させた透明樹脂で半導体発光素子チップ13の上をモールドしておいても良い。 Note that integrated the resin lens 15 and the phosphor layer 16 may be previously molded on the semiconductor light-emitting element chip 13 in the transparent resin obtained by dispersing the phosphor-containing. 【0027】図5は本発明の発光装置の更に別の実施例を示す構造概略図の1例である。 [0027] FIG. 5 is an example of a structural schematic view showing still another embodiment of a light emitting device of the present invention. 本例の発光装置は面状の発光光源であり、本例の発光装置では、例えば一つの面を残して他の三側面に光を反射し得る光反射層25を形成すると共に、光反射層が形成されている1つの面に半導体発光素子チップ23が埋めこまれた透光性の直方体からなる導光板21の一側端面(光反射層25が形成されていない面)には硫化物系蛍光体からなる蛍光体層26が形成されて、蛍光体層26の表面(外側)には光を均一に拡散させるフイルム27が貼付されている。 The light emitting device of the present embodiment is a planar light emitting source, the light-emitting device of the present embodiment forms a light reflecting layer 25 capable of reflecting light, for example, leaving one surface to the other three sides, the light-reflecting layer sulfide on one end face of the semiconductor light-emitting element chip 23 light guide plate 21 made of a rectangular parallelepiped crowded the light-transmitting-fill (surface where the light reflection layer 25 is not formed) on one side but being formed phosphor layer 26 made of phosphor is formed, the film 27 to uniformly diffuse the light is attached on the surface (outer side) of the phosphor layer 26. 2
2は導光板21の側面に埋め込まれている半導体発光素子チップ23と電気的に接続されたリードであり、このリード22を経由して電圧を印加すると半導体発光素子チップ23が発光し、この発光が導光板21内に導かれると共に、その内壁の反射光反射層25への衝突と反射を繰り返しながら蛍光体層26に到達し、ここで蛍光体層中の蛍光体が励起されて半導体発光素子チップ23とは異なる波長の発光を呈し、面状の光(L)として外部へ放出される。 2 is a semiconductor light-emitting element chip 23 and electrically connected to the leads embedded in the side surface of the light guide plate 21, the semiconductor light-emitting element chips 23 when a voltage is applied to emit light via the lead 22, the light emitting together but is guided into the light guide plate 21 and reaches the phosphor layer 26 while repeating reflection and collision of the reflected light reflecting layer 25 of the inner wall, wherein the phosphor in the phosphor layer are excited semiconductor light emitting element exhibit emission of a wavelength different from that of the chip 23, is discharged to the outside as planar light (L). 【0028】また、これら図3及び図4に例示したような点光源状の発光素子を線状もしくは面状に集積してアレイ状に配列して、線状または面状の光源とすることも出来る。 Further, these figures 3 and arranged in an array with integrated light source of a light-emitting element points as illustrated in a linear or planar in Figure 4, also be a linear or planar light source can. なお、図3〜図5を例に、励起用光源として半導体発光素子を用いた場合の発光装置について説明したが、本発明の発光装置における励起用光源としては、半導体発光素子に代えて、その発光のピークλが300〜 Incidentally, an example 3-5, have been described emitting device in the case of using the semiconductor light emitting element as an excitation light source, as the excitation light source in the light-emitting device of the present invention, instead of the semiconductor light emitting element, the 300 emission peak λ is
500nm波長域にある発光を示す電場発光素子(E Electro-luminescent elements which emit light in 500nm wavelength range (E
L)等と置き換えた構造であっても良い。 L) may be replaced with a structure and the like. 【0029】このような構成を有する本発明の発光装置は、その一構成成分である励起用光源の主発光波長ともう一方の構成成分である硫化物系蛍光体における母体中のCdの固溶割合並びに付活剤の種類を適宜選択し、場合によってはこれらCdの固溶割合並びに付活剤の種類の異なる複数の硫化物系蛍光体の混合蛍光体とすることによって所望の発光色の発光を呈する発光装置が得られ、これらをディスプレイの画素として配列することによりディスプレイとして用いることが出来る外、照明用光源や液晶ディスプレイ用のバックライトとしても用いられるなどその工業的な利用価値は大である。 The light emitting device of the present invention having such a configuration, the solid solution of Cd in maternal the main emission wavelength to be other constituents sulfide phosphor excitation light source that is one component and appropriately selecting the kind of proportion and activator, the desired light emission of emission colors by mixed phosphors of different sulfide phosphors kinds of solute ratio and activator of Cd as the case the light-emitting device is obtained which exhibits, these outer which can be used as a display by arranging the pixels of the display, the industrial utility value or the like is used as a backlight light source for illumination and for a liquid crystal display in a large is there. 【0030】 【実施例】次に実施例により本発明を説明するが、本発明は以下の実施例に例示した実施の態様に限定されるものではない。 [0030] The invention is illustrated by the following Examples, but the present invention is not intended to be limited to the aspects of the implementation illustrated in the following examples. 【0031】〔実施例1〕組成式が(Zn 0.61 Cd [0031] Example 1 composition formula (Zn 0.61 Cd
0.39 )S:Ag,Clで表される硫化亜鉛カドミウム蛍光体4mgとアクリル樹脂1gとトルエン15gとを混合して蛍光体塗布液を調製した。 0.39) S: Ag, to prepare a phosphor coating liquid by mixing a zinc sulfide cadmium phosphors 4mg acrylic resin 1g and toluene 15g represented by Cl. 【0032】これとは別に、励起用光源として主ピーク波長383nmの近紫外発光を示す発光ダイオード素子のウエハー部分を水平に保持し、先に調製した蛍光体塗布液をその発光部上に細いノズルから数百mg滴下してドーム状の蛍光体塗布膜を作り、次いでこれをそのまま半回転して蛍光体塗布面を逆水平にしてドーム状の塗膜内で蛍光体を沈降させ、これを室温で乾燥後、およそ2 [0032] Separately, a wafer portion of the light emitting diode element held horizontally showing the near-ultraviolet emission main peak wavelength of 383nm as the excitation light source, a thin phosphor coating solution of the previously prepared on the light-emitting portion nozzle and several hundred mg dripped from making the dome-shaped phosphor coating film, which is then the phosphor precipitated as a semi-rotating phosphor coated surface reversed horizontally in the coating of the dome, at room temperature this in after drying, approximately 2
00℃で3時間更に乾燥して表面に(Zn 0.61 Cd 3 hours further dried surface 00 ℃ (Zn 0.61 Cd
0. 39 )S:Ag,Cl蛍光体が塗布された実施例1 39) S: Ag, carried Cl phosphors are coated Example 1
の発光装置を製造した。 A light-emitting device was manufactured. 【0033】このようにして得られた実施例1の発光装置の電極に通電したところ、CIE表色系で表される発光色度点がx=0.324、y=0.594である、高輝度の黄緑色の発光を示す発光装置が得られた。 [0033] When a current is passed to the electrodes of the thus-emitting device of Example 1 obtained, CIE Table emission chromaticity points represented by the color system x = 0.324, a y = 0.594, high brightness light emitting device showing a yellow-green light emission was obtained. 【0034】〔比較例1〕蛍光体として、 組成式が(Zn 0.61 Cd 0.39 )S:Ag,Clで表される硫化亜鉛カドミウム蛍光体に代えて、組成式が(Zn [0034] As Comparative Example 1 phosphor composition formula (Zn 0.61 Cd 0.39) S: Ag, instead of the zinc sulfide cadmium phosphors represented by Cl, the composition formula (Zn
0.95 Cd 0.05 )S:Cu,Alで表される硫化亜鉛カドミウム蛍光体を用いた以外は実施例1の発光装置と同様にして表面に(Zn 0.95 Cd 0.05 0.95 Cd 0.05) S: Cu, the surface except for using zinc sulfide cadmium phosphors represented by Al in the same manner as that of the light-emitting device of Example 1 (Zn 0.95 Cd 0.05)
S:Cu,Al蛍光体が塗布された比較例1の発光装置を製造した。 S: Cu, to produce a light-emitting device of Comparative Example 1 Al phosphor is applied. 【0035】このようにして得られた比較例1の発光装置の電極に、実施例1と同一条件で通電したところ、C [0035] electrode of the thus-emitting device of Comparative Example 1 obtained, was energized under the same conditions as in Example 1, C
IE表色系で表される発光色度点がx=0.318、y Emission chromaticity point represented by IE color system is x = 0.318, y
=0.599である、実施例1の発光装置と類似の黄緑色の発光を示したが、その発光強度は実施例1の発光装置の86%であった。 = 0.599 is showed light emission of the light-emitting device similar to yellowish green Example 1, the emission intensity was 86% of the light-emitting device of Example 1. 【0036】〔実施例2〕蛍光体として、組成式が(Z [0036] As Example 2 phosphor composition formula (Z
0.61 Cd 0.39 )S:Ag,Clで表される硫化亜鉛カドミウム蛍光体に代えて、組成式が(Zn n 0.61 Cd 0.39) S: Ag , instead of the zinc sulfide cadmium phosphors represented by Cl, the composition formula (Zn
0.57 Cd 0.43 )S:Ag,Clで表される硫化亜鉛カドミウム蛍光体を用い、励起用光源として主ピーク波長383nmの近紫外発光を示す発光ダイオード素子に代えて主ピーク波長405nmの発光を示す発光ダイオード素子を用いた以外は実施例1の発光装置と同様にして表面に(Zn 0.57 Cd 0.43 )S:Ag, 0.57 Cd 0.43) S: Ag, with a zinc sulfide cadmium phosphors represented by Cl, in place of the light emitting diode device showing the near-ultraviolet emission main peak wavelength of 383nm as an excitation light source for the main peak wavelength of 405nm on the surface except for using the light-emitting diode device shows an emission in the same manner as the light-emitting device of example 1 (Zn 0.57 Cd 0.43) S : Ag,
Cl蛍光体が塗布された実施例2の発光装置を製造した。 Cl phosphor to produce a light-emitting device of Example 2 coated. 【0037】このようにして得られた実施例2の発光装置の電極に通電したところ、CIE表色系で表される発光色度点がx=0.465、y=0.519である、高輝度の緑黄色の発光を示す発光装置が得られた。 [0037] When a current is passed to the electrodes of the thus-emitting device of Example 2 obtained, CIE Table emission chromaticity points represented by the color system x = 0.465, a y = 0.519, high brightness light emitting device showing light emission green-yellow was obtained. 【0038】〔比較例2〕蛍光体として、組成式が(Z [0038] As Comparative Example 2 phosphor composition formula (Z
0.57 Cd 0.43 )S:Ag,Clで表される硫化亜鉛カドミウム蛍光体に代えて、組成式が(Zn n 0.57 Cd 0.43) S: Ag , instead of the zinc sulfide cadmium phosphors represented by Cl, the composition formula (Zn
0.92 Cd 0.08 )S:Au,Alで表される硫化亜鉛カドミウム蛍光体を用いた以外は実施例2の発光装置と同様にして表面に(Zn 0.92 Cd 0.08 0.92 Cd 0.08) S: Au, on the surface except for using zinc sulfide cadmium phosphors represented by Al in the same manner as that of the light-emitting device of Example 2 (Zn 0.92 Cd 0.08)
S:Au,Al蛍光体が塗布された比較例2の発光装置を製造した。 S: Au, was prepared a light-emitting device of Comparative Example 2 Al phosphor is applied. 【0039】このようにして得られた比較例2の発光装置の電極に、実施例2と同一条件で通電したところ、C [0039] electrode of the thus-emitting device of Comparative Example 2 obtained, was energized under the same conditions as in Example 2, C
IE表色系で表される発光色度点がx=0.440、y Emission chromaticity point represented by IE color system is x = 0.440, y
=0.520である、実施例2の発光装置と類似の緑黄色を示したが、その発光強度は実施例1の発光装置の7 = Is 0.520, it showed green-yellow light-emitting device and a similar second embodiment, the emission intensity light-emitting device of Example 1 7
3%であった。 It was 3%. 【0040】 【発明の効果】本発明は上述のような構成としたので、 [0040] According to the present invention since the above-described configuration,
構成要素として水銀などの有害物質を使用せず、高輝度、省消費電力の点状、面状の多色光源としての発光装置の提供を可能にする。 Without the use of toxic substances such as mercury as a component, high brightness, power saving punctate, to enable the provision of a light-emitting device as a planar multi-color light source. 【0041】 [0041]

【図面の簡単な説明】 【図1】本発明の発光装置に使用される硫化物系蛍光体の励起波長と相対発光量との相関を例示するグラフである。 It is a graph illustrating the correlation between BRIEF DESCRIPTION OF THE DRAWINGS [Figure 1] the excitation wavelength and the relative light emission amounts of the sulfide phosphor used for the light emitting device of the present invention. 【図2】本発明の発光装置に使用される硫化物系蛍光体母体中のCdの固溶割合(a)とこの蛍光体の励起光の発光波長(λ)との相関を例示するグラフである。 [Figure 2] a graph illustrating the correlation between the solid solution ratio of Cd in the sulfide-based phosphor in the matrix used for the light emitting device (a) and emission wavelength of the excitation light of the phosphor (lambda) of the present invention is there. 【図3】本発明の発光装置の一実施例を示す概略断面図である。 3 is a schematic sectional view showing an embodiment of a light-emitting device of the present invention. 【図4】本発明の発光装置の他の実施例を示す概略断面図である。 It is a schematic sectional view showing another embodiment of a light emitting device of the present invention; FIG. 【図5】本発明の発光装置の更に他の実施例を示す概略断面図である。 5 is a schematic sectional view showing still another embodiment of a light emitting device of the present invention.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl. 7識別記号 FI テーマコート゛(参考) H05B 33/14 H01L 23/30 B Fターム(参考) 3K007 AB02 AB03 AB04 DB02 DC01 DC02 4H001 CA06 CA07 XA16 XA30 XA48 YA25 YA29 YA47 YA79 4M109 AA02 BA07 CA05 DA07 EA02 EC11 EE12 EE15 GA01 5F041 AA03 AA12 AA24 AA31 CA34 CA40 CA43 DA44 DA45 DA46 DA47 DA55 DA63 DA76 DA77 DB01 DB03 DC83 EE21 EE23 FF06 FF11 FF16 5F073 BA09 CA02 CA07 CA22 EA07 FA29 FA30 ────────────────────────────────────────────────── ─── of the front page continued (51) Int.Cl. 7 identification mark FI theme Court Bu (reference) H05B 33/14 H01L 23/30 B F term (reference) 3K007 AB02 AB03 AB04 DB02 DC01 DC02 4H001 CA06 CA07 XA16 XA30 XA48 YA25 YA29 YA47 YA79 4M109 AA02 BA07 CA05 DA07 EA02 EC11 EE12 EE15 GA01 5F041 AA03 AA12 AA24 AA31 CA34 CA40 CA43 DA44 DA45 DA46 DA47 DA55 DA63 DA76 DA77 DB01 DB03 DC83 EE21 EE23 FF06 FF11 FF16 5F073 BA09 CA02 CA07 CA22 EA07 FA29 FA30

Claims (1)

  1. 【特許請求の範囲】 【請求項1】近紫外ないし短波長可視域に発光スペクトルのピーク波長(λ)をもった発光を呈する励起用光源と、該励起用光源からの発光を吸収し得る位置に配置されて、該励起用光源からの前記発光の少なくとも1部を吸収してこれとは異なるピーク波長の発光を呈する蛍光体とを具備する発光装置であって、前記蛍光体は、母体組成が(Zn 1−a ,Cd )Sで表され、かつ、前記a値とナノメータ(nm)単位で表した前記λ値との間に、3.375−(1250/λ)<a<3.75− And [Claims 1 excitation light source that emits light having a peak wavelength of the emission spectrum (lambda) in the near ultraviolet to short-wavelength visible region, a position capable of absorbing light emitted from 該励 appointment source are arranged, a light-emitting device comprising a phosphor which emits light of different peak wavelengths from this by absorbing at least a portion of the light emitting from 該励 appointed light source, the phosphor matrix composition There (Zn 1-a, Cd a ) is represented by S, and, between the lambda value expressed in the a value and the nanometer (nm) units, 3.375- (1250 / λ) < a <3 .75-
    (1250/λ)及び0≦a<1なる関係を有する硫化物系蛍光体であることを特徴とする発光装置。 (1250 / lambda) and 0 ≦ a <emitting device which is a sulfide-based phosphor having a 1 the relationship. 【請求項2】前記励起用光源の発光スペクトルのピーク波長(λ)が300〜500nmであることを特徴とする請求項1記載の発光装置。 Wherein said peak wavelength of the emission spectrum of the excitation light source (lambda) is the light-emitting device according to claim 1, characterized in that the 300 to 500 nm. 【請求項3】前記励起用光源の発光スペクトルのピーク波長(λ)が370〜480nmであることを特徴とする請求項2記載の発光装置。 3. A light emitting device according to claim 2, wherein the peak wavelength of the emission spectrum of the excitation light source (lambda) is characterized in that it is a 370~480Nm. 【請求項4】 前記励起用光源が発光ダイオード(LE Wherein said excitation light source is a light emitting diode (LE
    D)、半導体レーザー、電場発光装置(EL)の中の少なくとも1種であることを特徴とする請求項1〜3のいずれか1項に記載の発光装置。 D), a semiconductor laser, electroluminescent device (light emitting device according to any one of claims 1 to 3, characterized in that at least one in the EL). 【請求項5】 前記硫化物系蛍光体の付活剤が銀(A 5. The activator of the sulfide-based phosphor is silver (A
    g)、金(Au)、銅(Cu)及びマンガン(Mn)の中の少なくとも1つであることを特徴とする請求項1〜 g), gold (Au), copper (Cu) and claim 1, wherein at least is one in manganese (Mn)
    4のいずれか1項に記載の発光装置。 The light emitting device according to any one of 4.
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JP2013534728A (en) * 2010-06-22 2013-09-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Semiconductor device and method for manufacturing semiconductor device
JP2014507807A (en) * 2011-02-17 2014-03-27 ザクリトエ アクツィオネルノエ オブシェストヴォ ”ナウチノ−プロイズヴォドストヴェナヤ コメルチェスカヤ フィルマ ”エルタン リミテッド” White LED light source with remote photoluminescence converter
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US9001288B2 (en) 2009-01-26 2015-04-07 Dexerials Corporation Color converting member, method of manufacturing the same, light emitting device, and display device
US9951938B2 (en) 2009-10-02 2018-04-24 GE Lighting Solutions, LLC LED lamp
US9634207B2 (en) 2010-06-22 2017-04-25 Osram Opto Semiconductors Gmbh Semiconductor component and method of producing a semiconductor component
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