JP2003110150A - Semiconductor light-emitting element and light-emitting device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which is composed of a near-ultraviolet LED and a fluorescent material layer and emits white light with high beam and to provide a light emitting device. SOLUTION: A semiconductor light-emitting element which emits white light with high beam can be obtained by combining a near-ultraviolet LED and a fluorescent material layer including a blue fluorescent material which absorbs the near-ultraviolet light near 350-410 nm emitted by the near-ultraviolet LED and has its light-emitting peak in the wavelength region of over 400 nm and under 500 nm and a yellow fluorescent material which has its light-emitting peak in the wavelength region over 550 nm and under 600 nm.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device which emits white light by combining a near ultraviolet light emitting diode (hereinafter, referred to as near ultraviolet LED) and a plurality of phosphors, and a structure using this semiconductor light emitting device. The present invention relates to a semiconductor light emitting device.

[0002]

2. Description of the Related Art Conventionally, the wavelength exceeds 350 nm and 410 nm.
Near-ultraviolet L having an emission peak in the following near-ultraviolet wavelength range
ED (strictly near-ultraviolet LED chip) and this near-ultraviolet L
Absorbs near-ultraviolet light emitted by ED and is 380 nm or more 780
In combination with a phosphor layer containing an inorganic phosphor that emits fluorescence having an emission peak in the visible wavelength range of nm or less,
A semiconductor light emitting device that emits white light is known. The semiconductor light emitting device using the inorganic phosphor is more widely used because it is superior in durability to the semiconductor light emitting device using the organic phosphor.

In this specification, the emission chromaticity point (x, y) in the CIE chromaticity diagram is 0.21 ≦ x ≦ 0.48,
Light within the range of 0.19 ≦ y ≦ 0.45 is defined as white light.

As such a semiconductor light emitting device, for example, JP-A-11-246857 and JP-A-2000-
There are semiconductor light emitting elements disclosed in Japanese Patent No. 183408, Japanese Patent Publication No. 2000-509912, Japanese Patent Laid-Open No. 2001-143869, and the like.

[0005] Japanese Patent Laid-Open No. 11-246857, the general formula _{(La 1-xy Eu x Sm} y) 2 O 2 S ( where 0.0
1 ≦ x ≦ 0.15, 0.0001 ≦ y ≦ 0.03), the lanthanum oxysulfide phosphor is used as a red phosphor, and the phosphor has a light emitting layer composed of a gallium nitride-based compound semiconductor.
A semiconductor light emitting device is described which is combined with a near-ultraviolet LED which emits light of around 70 nm. In addition, JP-A-11
JP-A-246857 discloses an invention relating to a semiconductor light emitting element which emits white light having an arbitrary color temperature by appropriately combining the red phosphor and other blue and green phosphors.

Japanese Patent Laid-Open No. 2000-183408 discloses that
Having a light emitting layer composed of a gallium nitride-based compound semiconductor,
An ultraviolet LED chip that emits ultraviolet light having an emission peak near 370 nm, a first phosphor layer including a blue phosphor that absorbs the ultraviolet light and emits blue light, and a yellow-orange that absorbs the blue light A semiconductor light emitting device comprising a second phosphor layer containing a yellow-orange phosphor that emits light is described.
Here, as the blue phosphor, at least one selected from the following (1) to (3) is used. (1) In formula _{(M1, Eu) 10 (PO} 4) 6 Cl 2 ( wherein, M1 is Mg, Ca, at least represents one element selected from Sr and Ba) 2 divalent substantially represented by Europium-activated halophosphate phosphor. (2) General formula a (M2, Eu) O.bAl ₂ O ₃ (wherein
M2 represents at least one element selected from Mg, Ca, Sr, Ba, Zn, Li, Rb and Cs, and a and b are a> 0, b> 0, 0.2 ≦ a / b ≦ 1.5. And a divalent europium-activated aluminate phosphor. (3) General formula a (M2, Eu _v , Mn _w ) O.bAl ₂ O ₃
(In the formula, M2 is Mg, Ca, Sr, Ba, Zn, Li,
At least one element selected from Rb and Cs, where a, b, v and w are a> 0, b> 0, 0.2 ≦ a
/B≦1.5, and a numerical value satisfying 0.001 ≦ w / v ≦ 0.6), which is a divalent europium- and manganese-activated aluminate phosphor.

The yellow-orange phosphor is represented by the general formula (Y
_1-xy Gd _x Ce _y ) ₃ Al ₅ O ₁₂ (in the formula, x and y are numbers satisfying 0.1 ≦ x ≦ 0.55 and 0.01 ≦ y ≦ 0.4). The trivalent cerium-activated aluminate phosphor (hereinafter referred to as YAG-based phosphor) is used.

Further, in Japanese Patent Publication No. 2000-509912, an ultraviolet LED having an emission peak in a wavelength range of 300 nm to 370 nm and 430 nm to 490 n are disclosed.
a blue phosphor having an emission peak in a wavelength range of m or less,
A semiconductor light emitting device is disclosed which is a combination of a green phosphor having an emission peak in a wavelength range of 520 nm to 570 nm and a red phosphor having an emission peak in a wavelength range of 590 nm to 630 nm. In this semiconductor light emitting device, BaMgAl ₁₀ O is used as the blue phosphor.
₁₇ : Eu, Sr ₅ (PO ₄ ) ₃ Cl: Eu, ZnS: Ag
(Each of them has an emission peak wavelength of 450 nm), but as a green phosphor, ZnS: Cu (emission peak wavelength of 550 nm)
Or BaMgAl ₁₀ O ₁₇ : Eu, Mn (emission peak wavelength 5
15 nm), but as a red phosphor, Y ₂ O ₂ S: Eu ³⁺
(Emission peak wavelength 628 nm), YVO ₄ : Eu ³⁺ (emission peak wavelength 620 nm), Y (V, P, B) O ₄ : E
u ³⁺ (emission peak wavelength 615 nm), YNbO ₄ : Eu
³⁺ (emission peak wavelength 615 nm), YTaO ₄ : Eu ³⁺
(Emission peak wavelength 615 nm), [Eu (acac)
₃ (phen)] (emission peak wavelength 611 nm) is used.

On the other hand, Japanese Patent Laid-Open No. 2001-143869
Includes an organic material as a light-emitting layer and a blue-violet of 430 nm or less.
An organic LED having an emission peak in the near-ultraviolet wavelength range, or
Alternatively, an inorganic material is used as a light emitting layer, and wavelengths in the above-mentioned blue-violet to near-ultraviolet are used.
An inorganic LED having an emission peak in a range, a blue phosphor,
Semiconductor made by combining green phosphor and red phosphor
A light emitting device is described. In this semiconductor light emitting device,
As a blue phosphor, Sr₂P₂O₇: Sn⁴⁺, Sr_FourAl
₁₄O_{twenty five}: Eu²⁺, BaMgAl_TenO₁₇: Eu²⁺, SrG
a₂S_Four: Ce³⁺, CaGa₂S_Four: Ce³⁺, (Ba, S
r) (Mg, Mn) Al_TenO₁₇: Eu²⁺, (Sr, C
a, Ba, Mg)_Ten(PO_Four)₆Cl₂: Eu^{2 +}, BaA
l₂SiO₈: Eu²⁺, Sr₂P₂O₇: Eu²⁺, Sr_Five(P
O_Four)₃Cl: Eu²⁺, (Sr, Ca, Ba)_Five(PO_Four)
₃Cl: Eu²⁺, BaMg₂Al₁₆O₂₇: Eu²⁺, (B
a, Ca)_Five(PO_Four)₃Cl: Eu²⁺, Ba₃MgSi₂
O₈: Eu ²⁺, Sr₃MgSi₂O₈: Eu²⁺Is used,
As the green phosphor, (BaMg) Al₁₆O₂₇: E
u²⁺, Mn²⁺, Sr_FourAl₁₄O_{twenty five}: Eu²⁺, (SrB
a) Al₂Si₂O₈: Eu²⁺, (BaMg)₂SiO_Four:
Eu²⁺, Y₂SiO_Five: Ce³⁺, Tb ³⁺, Sr₂P₂O₇−
Sr₂B₂O₇: Eu²⁺, (BaCaMg)_Five(PO_Four)₃C
l: Eu²⁺, Sr₂Si₃O₈-2SrCl₂: Eu²⁺, Z
r₂SiO_Four-MgAl₁₁O₁₉: Ce³⁺, Tb³⁺, Ba₂
SiO_Four: Eu²⁺, Sr₂SiO_Four: Eu²⁺, (BaS
r) SiO_Four: Eu²⁺Is used as a red phosphor
Is Y₂O₂S: Eu³⁺, YAlO₃: Eu³⁺, Ca₂Y₂
(SiO_Four)₆: Eu³⁺, LiY₉(SiO_Four)₆O₂: Eu
³⁺, YVO_Four: Eu³⁺, CaS: Eu²⁺, Gd₂O₃: E
u³⁺, Gd₂O₂S: Eu³⁺, Y (P, V) O_Four: Eu³⁺
Is used.

As described above, in the conventional semiconductor light-emitting device that emits white light, the blue-based phosphor, the green-based phosphor, and the red-based phosphor emit mixed colors, or the blue-based phosphor and the yellow-based phosphor. White-based light is obtained by the color mixture of the emitted light.

In the conventional semiconductor light emitting device of the type that obtains white light by mixing the colors of light emitted by the blue phosphor and the yellow phosphor, the YAG phosphor is used as the yellow phosphor. . In addition, the above YAG phosphor is 3
The wavelength region of more than 50 nm and less than or equal to 410 nm, in particular, the near-ultraviolet LED having a light-emitting layer composed of a gallium nitride-based compound semiconductor emits almost no light by excitation of near-ultraviolet light of 360 nm or more and 410 nm or less, and 410 nm or more 53
Since the phosphor emits yellow light with high efficiency under the excitation of blue light of 0 nm or less, the conventional semiconductor light emitting device using the YAG phosphor requires the blue phosphor as an essential component. The blue light emitted from the body excites the yellow phosphor to obtain white light.

Such a semiconductor light emitting element that emits white light is known as a semiconductor light emitting element that is in great demand for light emitting devices such as lighting devices and display devices.

On the other hand, a semiconductor light emitting device in which an inorganic compound fluorescent substance other than the YAG type fluorescent substance is combined with an LED is also conventionally known. In the above-mentioned JP 2001-143869 A, Ba ₂ SiO ₄ : Eu ²⁺ , Sr ₂ SiO ₄ : Eu ²⁺ , M are disclosed.
g ₂ SiO ₄ : Eu ²⁺ , (BaSr) ₂ SiO ₄ : Eu ²⁺ ,
A semiconductor light emitting device using a (BaMg) ₂ SiO ₄ : Eu ²⁺ silicate phosphor is described.

However, this Japanese Patent Laid-Open No. 2001-143
In the semiconductor light emitting device described in Japanese Patent No. 869, any silicate phosphor is applied as a green phosphor, not as a yellow phosphor. It is also said that it is preferable to use an organic LED rather than an inorganic LED made of an inorganic compound from the viewpoint of luminous efficiency. That is, the invention described in this publication is a near-ultraviolet LED, preferably an organic L.
The present invention relates to a semiconductor light emitting device which is a combination of an ED and phosphors of three types of inorganic compounds of blue, green and red phosphors.

As far as the experiments by the present inventors are concerned, Sr ₂ described in Japanese Patent Application Laid-Open No. 2001-143869.
The SiO ₄ : Eu ²⁺ silicate phosphor is a phosphor that can have two crystal phases (orthorhombic and monoclinic), and at least the practically used Eu ²⁺ emission center addition amount (= Eu atom). Number / (number of Sr atoms + number of Eu atoms): x) is 0.01
Within the range of ≦ x ≦ 0.05, orthorhombic Sr ₂ SiO ₄ : E
u ²⁺ (α′-Sr ₂ SiO ₄ : Eu ²⁺ ) has a wavelength of 560 to 560.
It is a yellow phosphor that emits yellow light having an emission peak near 575 nm, and is a monoclinic Sr ₂ SiO ₄ : Eu ²⁺ (β-S
r ₂ SiO ₄ : Eu ²⁺ ) is a green phosphor that emits green light having an emission peak near a wavelength of 545 nm. Therefore, Sr described in JP 2001-143869 A
₂ SiO ₄ : Eu ²⁺ green phosphor is monoclinic Sr ₂ SiO ₄ :
It can be considered as an Eu ²⁺ phosphor.

Now, the silicate phosphor will be described. Conventionally, (Sr _1-a3-b3-x Ba _a3 Ca _b3 Eu _x )
Silicate phosphor represented by the chemical formula ₂ SiO ₄ (however, a
3, b3, and x are 0 ≦ a3 ≦ 1, 0 ≦ b3 ≦ 1, and
A numerical value that satisfies 0 <x <1 is known. The silicate phosphor is a phosphor that has been studied as a phosphor for a fluorescent lamp, and the emission peak wavelength is 505 nm or more and 598 n or more by changing the composition of Ba-Sr-Ca.
It is known that the phosphor changes within a range of about m or less. Further, it is also known to be a phosphor that emits light with relatively high efficiency under irradiation with light in the range of 170 to 350 nm (J. Electrochemical).
Soc. Vol. 115, No. 11 (1968) p
p. 1181-1184).

However, there is no description in the above-mentioned document that the silicate phosphor exhibits highly efficient light emission in the long wavelength region of more than 350 nm under near-ultraviolet light excitation conditions. Therefore, the silicate phosphor is
High-efficiency 550 nm to 600 n due to near-ultraviolet light excitation in the near-ultraviolet LED having a light emitting layer formed of a gallium nitride-based compound semiconductor in the near-ultraviolet wavelength range of more than 0 nm and 410 nm or less, particularly near 370 to 390 nm.
It has not been known so far that the phosphor emits a yellowish light emission of less than m.

In a conventional light emitting device using a semiconductor light emitting element in which a near-ultraviolet LED and a phosphor layer containing a plurality of phosphors are combined, in a conventional light emitting device, a blue phosphor, a green phosphor and a red phosphor are used. A semiconductor light-emitting element of a system that obtains white light by mixing the colors of the light emitted by the blue light, or by mixing the blue light emitted by the blue phosphor and the yellow light emitted by the YAG phosphor by absorbing the blue light. The light emitting device.

In this specification, various display devices (for example, LED information display terminal, LED, etc.) using semiconductor light emitting elements are used.
Traffic signal lights, car LED stop lamps and LED turn signals, and various lighting devices (LED indoor and outdoor lighting,
In-vehicle LED lights, LED emergency lights, LED surface emitting sources, etc.) are widely defined as light emitting devices.

[0020]

By the way, near ultraviolet LE
In the conventional white semiconductor light emitting device in which D and a phosphor layer containing a plurality of phosphors were combined, the luminous flux of white light emitted by the semiconductor light emitting device was low. This is 350 nm
Since the development of phosphors exhibiting high luminous efficiency under near-ultraviolet light excitation of over 410 nm and less than 410 nm has not been sufficiently developed so far, all of the blue-based phosphors, green-based phosphors and red-based phosphors are white. There are few types of phosphors that can be used for semiconductor light emitting devices, and not only the blue, green, and red phosphors that exhibit relatively high luminous efficiency are limited to a small number, but also white light emission. This is due to the limited shape of the spectrum. Also, blue-based, green-based, mixed colors of light emitted by three types of red-based phosphors, or blue-based light emitted by the blue-based phosphor and yellow-based light wavelength-converted by absorbing this blue-based light This is also due to the fact that white light is obtained by color mixing.

The present invention has been made in order to solve these problems, and provides a semiconductor light emitting element and a semiconductor light emitting device which emit a white light with a high luminous flux and are formed by combining a near-ultraviolet LED and a phosphor layer. The purpose is to provide.

[0022]

In order to solve the above problems, a semiconductor light emitting device according to claim 1 of the present invention is 350
and a near-ultraviolet LED that emits light having an emission peak in a wavelength range of more than 410 nm and less than 410 nm, and absorbs near-ultraviolet light emitted by the near-ultraviolet LED, and emits fluorescence having an emission peak in a visible wavelength range of 380 nm to 780 nm. In combination with a phosphor layer containing a plurality of emitting phosphors, the emission chromaticity point (x, y) in the CIE chromaticity diagram is 0.21 ≦ x ≦ 0.4.
8, 0.19 ≦ y ≦ 0.45, which is a semiconductor light emitting device emitting white light, wherein the phosphor layer has a wavelength of 38
A yellow phosphor that emits yellowish fluorescence having an emission peak in a wavelength range of 550 nm or more and less than 600 nm under irradiation with near-ultraviolet light in a wavelength range of 0 nm and its vicinity, and 400
A semiconductor light-emitting device comprising two types of phosphors, which are blue-based phosphors that emit a blue-based fluorescence having an emission peak in a wavelength region of not less than 500 nm and less than 500 nm.

Here, the near-ultraviolet LED is an ultraviolet LED.
Is not particularly limited as long as it emits light having an emission peak in a wavelength range of 250 nm or more and 410 nm or less including, but from the viewpoint of availability, ease of manufacture, cost, emission intensity, etc., a preferable LED is 300 nm or more. Four
A near-ultraviolet LED that emits light having an emission peak in a wavelength region of 10 nm or less, and more preferably exceeds 350 nm and 4
Near-ultraviolet LED which emits light having an emission peak in a wavelength range of 10 nm or less, more preferably more than 350 nm 4
It is a near-ultraviolet LED that emits light having an emission peak in the wavelength region of less than 00 nm.

The blue phosphor is preferably 41
0 nm or more and 480 nm or less, more preferably 420 n
It is desirable that the blue phosphor has an emission peak in the wavelength region of m or more and 460 nm or less, and the yellow phosphor is preferably 570 nm or more and 590 nm or less,
More preferably, a yellow phosphor having an emission peak in the wavelength region of more than 570 nm and less than 590 nm is desirable.

With such a phosphor layer, both the yellow phosphor and the blue phosphor absorb the near-ultraviolet light having an emission peak in the wavelength range emitted by the near-ultraviolet LED,
Since the wavelengths are efficiently converted into yellow light and blue light, respectively, the semiconductor light emitting device emits light of two types, blue light having a wavelength of 400 nm to less than 500 nm and yellow light having a wavelength of 550 nm to less than 600 nm. Is emitted with high efficiency, and a white-based light is emitted by mixing these two types of light colors.

Further, in order to enhance the color rendering of the above white light, a red phosphor such as an oxysulfide phosphor mainly composed of a compound represented by the following chemical formula may be blended.

(Ln _1-x Eu _x ) O ₂ S Here, Ln is at least one rare earth element selected from Sc, Y, La and Gd, and x is a numerical value satisfying 0 <x <1.

The semiconductor light emitting device according to claim 2 of the present invention is the semiconductor light emitting device according to claim 1 in which a yellow phosphor is a preferred embodiment, and the yellow phosphor is represented by the following chemical formula. It is a silicate phosphor mainly composed of a compound.

(Sr _1-a1-b1-x Ba _a1 Ca _b1 Eu _x ) ₂ SiO ₄ where a1, b1 and x are respectively 0 ≦ a1 ≦ 0.3,
It is a numerical value that satisfies 0 ≦ b1 ≦ 0.8 and 0 <x <1.

Here, a1, b1, and
The numerical value of x is preferably 0 <a1 ≦ 0.2 and 0 ≦ b1 ≦, respectively, from the viewpoints of crystal stability against heat of the phosphor, temperature quenching resistance, emission intensity of yellowish emission, and light color.
0.7, 0.005 ≦ x ≦ 0.1, and more preferably,
0 <a1 ≦ 0.15, 0 ≦ b1 ≦ 0.6, 0.0, respectively
It is desirable that the numerical values satisfy 1 ≦ x ≦ 0.05.

It should be noted that the above-mentioned silicate phosphor has a thickness of 250 as shown in an example of the excitation spectrum and the emission spectrum in FIG.
Has an excitation peak around 300 nm,
550 to 600 by absorbing light within a wide wavelength range of nm
It is a yellow fluorescent substance that emits yellowish fluorescent light having an emission peak in the wavelength range of yellowish green to yellow to orange. Therefore, unlike the YAG-based phosphor, the silicate phosphor does not have a near-UV L phosphor even if there is no blue-based phosphor that converts near-ultraviolet light into blue light.
When the near-ultraviolet light emitted by the ED is emitted, it emits relatively high-efficiency yellowish light. Therefore, the conversion efficiency of near-ultraviolet light to yellowish light is substantially higher than that of the YAG-based phosphor, and the emission efficiency From the aspect, it becomes preferable.

When both a1 and b1 are close to 0, a silicate phosphor in which orthorhombic crystals and monoclinic crystals are mixed is likely to be formed. Is weakened, and in any case, it becomes a phosphor with a greenish tint and emits light with poor yellow color purity. Also, x
Is smaller than the above numerical range, the luminescence intensity of the silicate phosphor is weak because the Eu ²⁺ emission center concentration is low, and when it is larger, the luminescence intensity is increased as the ambient temperature of the silicate phosphor is increased. The problem of temperature quenching, which decreases

The semiconductor light emitting device according to claim 3 of the present invention is the semiconductor light emitting device according to claim 2 in which a silicate phosphor is a more preferable embodiment. The silicate phosphor is represented by the following chemical formula. Mainly composed of
In addition, the silicate phosphor has an orthorhombic crystal structure.

(Sr _1-a1-b2-x Ba _a1 Ca _b2 Eu _x ) ₂ SiO ₄ where a1, b2 and x are respectively 0 ≦ a1 ≦ 0.3,
It is a numerical value that satisfies 0 ≦ b2 ≦ 0.6 and 0 <x <1,
From the same viewpoint as in the case of claim 2, preferably, each is 0
<A1 ≦ 0.2, 0 ≦ b2 ≦ 0.4, 0.005 ≦ x ≦
0.1, more preferably 0 <a1 ≦ 0.1
It is desirable that the numerical values satisfy 5, 0 ≦ b2 ≦ 0.3 and 0.01 ≦ x ≦ 0.05.

A semiconductor light emitting device according to a fourth aspect of the present invention is the semiconductor light emitting device according to any one of the first to third aspects, in which a blue phosphor is added to the following (1) or (2): It is a blue phosphor. (1) Halophosphate phosphor (M1 _1-x Eu _x ) ₁₀ (PO ₄ ) ₆ Cl ₂ which is mainly composed of a compound represented by the following chemical formula, where M1 is Ba, Sr, Ca or Mg. At least one alkaline earth metal element selected, x is 0 <x
It is a numerical value that satisfies <1. (2) Aluminate phosphor (M2 _1-x Eu _x ) (M3 _1-y1 Mny ₁ ) Al ₁₀ O ₁₇ mainly composed of a compound represented by the following chemical formula, where M2 is Ba, Sr, At least one alkaline earth metal element selected from Ca, M3 is Mg, Zn
At least one element selected from x and y1 are numerical values that satisfy 0 <x <1 and 0 ≦ y1 <0.05, respectively.

The above-mentioned blue phosphor is a high-efficiency phosphor that emits strong light when excited by near-ultraviolet light. Therefore, when such phosphors are combined, the phosphor layer emits white light with high emission intensity. It begins to emit light.

A semiconductor light-emitting device according to claim 5 of the present invention is the semiconductor light-emitting device according to any one of claims 1 to 4, wherein the near-ultraviolet LED has a light-emitting layer composed of a gallium nitride compound semiconductor. It is what

A near-ultraviolet LED having a light-emitting layer composed of a gallium nitride-based compound semiconductor exhibits high luminous efficiency and is capable of long-term continuous operation.
The long-term continuous operation is possible by using
It is possible to obtain a semiconductor light emitting device that emits white light with a high luminous flux.

A semiconductor light emitting device according to a sixth aspect of the present invention is a semiconductor light emitting device configured by using the semiconductor light emitting element according to any one of the first to fifth aspects.

Since the semiconductor light emitting device according to any one of claims 1 to 5 of the present invention emits a high luminous flux white light, when a semiconductor light emitting device according to the present invention is used to constitute a light emitting device, a high luminous flux white light is emitted. A semiconductor light emitting device that emits is obtained. Here, as a specific example of the semiconductor light emitting device, an LED information display terminal, L
ED traffic lights, car LED stop lamps, LEs
Examples include various display devices such as a D-direction indicator light, and various lighting devices such as an LED indoor / outdoor illumination light, an in-vehicle LED light, an LED emergency light, and an LED surface light source.

Even if a light emitting element (not limited to a semiconductor light emitting element) that emits light emission having an emission peak in the same wavelength region as a main light emitting component is used instead of the near-ultraviolet LED in the present invention, the same effect can be obtained. It goes without saying that the obtained white light emitting device is obtained.

[0042]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) Embodiments of a semiconductor light emitting device of the present invention will be described below with reference to the drawings. 1 to 3 are vertical sectional views of semiconductor light emitting devices of different types.

As a typical example of the semiconductor light emitting device, FIG.
In addition, the flip-chip type near-ultraviolet LED 1 is conductively mounted on the sub-mount element 5, and the blue phosphor particles 3 and the yellow phosphor particles 4 containing particles of the silicate phosphor are internally provided and the phosphor layer 2 is provided. Shows a semiconductor light emitting device having a structure in which the near-ultraviolet LED 1 is sealed by a resin package that also serves as
In FIG. 2, the near-ultraviolet LED 1 is conductively mounted on the cup 7 provided in the mount lead of the lead frame 6, and the yellow phosphor particles containing the blue phosphor particles 3 and the silicate phosphor particles in the cup 7. 4 is provided with a phosphor layer 2 therein,
A semiconductor light emitting device having a structure in which the entire structure is sealed with a sealing resin 8 is shown in FIG. 3, in which a near-ultraviolet LED 1 is arranged in a casing 9, and blue-based phosphor particles 3 and a silicate fluorescence are arranged in the casing 9. 1 shows a chip-type semiconductor light emitting device having a structure in which a phosphor layer 2 formed of a resin containing yellow phosphor particles 4 containing body particles is provided.

1 to 3, the near-ultraviolet LED 1 is
More than 350 nm and 410 nm or less, preferably 350 n
It is for obtaining near-ultraviolet light having an emission peak in a wavelength region of more than m and less than 400 nm, such as gallium nitride compound semiconductors, silicon carbide compound semiconductors, zinc selenide compound semiconductors, and zinc sulfide compound semiconductors. A photoelectric conversion element (so-called LED, inorganic electroluminescence (EL) element, organic EL element) having a light emitting layer composed of an inorganic compound or an organic compound.

Here, in order to obtain a large near-ultraviolet light output stably for a long period of time, the near-ultraviolet LED 1 is preferably an inorganic LED composed of an inorganic compound, and among them, a light emitting layer composed of a gallium nitride compound semiconductor is used. Near UV LED
However, since the emission intensity is high, it is more preferable.

The phosphor layer 2 absorbs the near-ultraviolet light emitted by the near-ultraviolet LED 1, and the emission chromaticity point (x, y) in the CIE chromaticity diagram is 0.21≤x≤0.48,0. 19 ≦ y
It is for converting to white light in the range of ≤0.45, and absorbs the near-ultraviolet light emitted by the near-ultraviolet LED 1 to 40
Absorbing near-ultraviolet light emitted by the near-ultraviolet LED 1 and near-ultraviolet light emitted by the near-ultraviolet LED 1 and, particularly, near-ultraviolet light having a wavelength of 380 nm or more and 550 nm to 600 nm. The yellow phosphor particles 4 which emit yellowish fluorescence having an emission peak in a wavelength range of

In the semiconductor light emitting device of the present invention, the phosphor layer 2 is formed by dispersing the phosphor containing the blue phosphor particles 3 and the yellow phosphor particles 4 in the base material. As the base material, a resin such as an epoxy resin, an acrylic resin, a polyimide resin, a urea resin, or a silicone resin can be used, and the epoxy resin or the silicone resin is preferable because it is easy to obtain and handle and inexpensive. The substantial thickness of the phosphor layer 2 is 10 μm or more and 1 mm or less, preferably 100 μm.
m or more and 700 μm or less.

The blue-based phosphor particles 3 in the phosphor layer 2 absorb the near-ultraviolet light emitted by the near-ultraviolet LED 1 and emit a blue-based fluorescence having an emission peak in a wavelength region of 400 nm or more and less than 500 nm. As long as it is an inorganic material or an organic material (for example, a fluorescent dye), it can be used, but it is desirable to use the phosphor of either (1) or (2) below. Good. (1) Halophosphate phosphor (M1 _1-x Eu _x ) ₁₀ (PO ₄ ) ₆ Cl ₂ which is mainly composed of a compound represented by the following chemical formula, where M1 is Ba, Sr, Ca or Mg. At least one alkaline earth metal element selected, x is 0 <x
It is a numerical value that satisfies <1. (2) Aluminate phosphor (M2 _1-x Eu _x ) (M3 _1-y1 Mny _y ) Al ₁₀ O ₁₇ mainly composed of a compound represented by the following chemical formula, where M2 is Ba, Sr, At least one alkaline earth metal element selected from Ca, M3 is Mg, Zn
At least one element selected from x and y1 are numerical values that satisfy 0 <x <1 and 0 ≦ y1 <0.05, respectively.

As a specific example of the desirable blue phosphor, BaMgAl ₁₀ O ₁₇ : Eu ²⁺ , (Ba, S
r) (Mg, Mn) Al ₁₀ O ₁₇ : Eu ²⁺ , (Sr, C
a, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu ²⁺ , Sr
₅ (PO ₄ ) ₃ Cl: Eu ²⁺ , (Sr, Ca, Ba) ₅ (P
O ₄ ) ₃ Cl: Eu ²⁺ , BaMg ₂ Al ₁₆ O ₂₇ : Eu ²⁺ ,
_{(Ba, Ca) 5 (PO} 4) 3 Cl: Eu 2+ and the like.

The yellow phosphor particles 4 in the phosphor layer 2 are mainly composed of a compound represented by the following chemical formula from the viewpoint of ease of production and good emission performance (high brightness, high yellow purity). A silicate phosphor composed of

(Sr _1-a1-b1-x Ba _a1 Ca _b1 Eu _x ) ₂ SiO ₄ where a1, b1 and x are respectively 0 ≦ a1 ≦ 0.3,
Numerical values satisfying 0 ≦ b1 ≦ 0.8 and 0 <x <1, preferably 0 <a1 ≦ 0.2, 0 ≦ b1 ≦ 0.7, 0.00
5 ≦ x ≦ 0.1, more preferably 0 <a1 ≦ 0.1
5, 0 ≦ b1 ≦ 0.6 and 0.01 ≦ x ≦ 0.05.

As such a yellow phosphor, there is any of the silicate phosphors described in (1) or (2) below. (1) Silicate phosphor (Sr _1-a1-b2-x Ba _a1 Ca _b2 Eu _x ) ₂ SiO ₄ having the following composition having an orthorhombic crystal structure, where a1, b2 and x are respectively 0 ≦ a1 ≦ 0.3,
0 ≦ b2 ≦ 0.6, 0 <x <1, preferably 0 respectively
<A1 ≦ 0.2, 0 ≦ b2 ≦ 0.4, 0.005 ≦ x ≦
0.1, more preferably 0 <a1 ≦ 0.1
It is a numerical value that satisfies 5, 0 ≦ b2 ≦ 0.3 and 0.01 ≦ x ≦ 0.05. (2) Silicate phosphor (Sr _1-a2-b1-x Ba _a2 Ca _b1 Eu _x ) ₂ SiO ₄ having a monoclinic crystal structure and having the following composition, where a2, b1 and x are respectively: 0 ≦ a2 ≦ 0.2,
0 ≦ b1 ≦ 0.8, 0 <x <1, preferably 0 respectively
≦ a2 ≦ 0.15, 0 <b1 ≦ 0.7, 0.005 ≦ x
≦ 0.1, more preferably 0 ≦ a2 ≦ 0.
It is a numerical value that satisfies 1, 0 <b1 ≦ 0.6 and 0.01 ≦ x ≦ 0.05.

In a composition in which the numerical values of a1, a2, b1 and b2 are smaller than the above range, the crystal structure of the silicate phosphor is likely to be unstable, and there arises a problem that the emission characteristics change depending on the operating temperature. On the other hand, in the case of a composition having a numerical value larger than the above range, the light emission becomes greenish, and not a good yellow phosphor, but a green phosphor, so that it is combined with a blue phosphor. However, it does not become a semiconductor light emitting device that emits high luminous flux and white light. Further, when the Eu addition amount x has a numerical value smaller than the above range, the emission intensity is weak, and when the Eu addition amount x is large, the problem of temperature quenching, in which the emission intensity decreases as the ambient temperature rises, remarkably occurs.

As the yellow phosphor used in the semiconductor light emitting device of the present invention, the silicate phosphor having the orthorhombic crystal structure is used because of the excellent yellow color purity of the yellow light emitted by the silicate phosphor. Is preferred. In addition, for the purpose of stabilizing the crystal structure of the silicate phosphor and increasing the emission intensity,
It is also possible to replace a part of Sr, Ba and Ca with Mg or Zn.

Further, part of Si can be replaced by Ge for the purpose of controlling the emission color of the silicate phosphor.
That is, a silicate phosphor mainly composed of a compound represented by the following chemical formula can be used as the yellow phosphor.

(Sr _1-a1-b1-x Ba _a1 Ca _b1 Eu _x )
₂ (Si _1-z Ge _z ) O ₄ where a1, b1, x, and z are 0 ≦ a1 ≦ 0.
The numerical values satisfy 3, 0 ≦ b1 ≦ 0.8, 0 <x <1, and 0 ≦ z <1.

The silicate phosphor has a central particle size of 0.1 when evaluated by a particle size distribution analyzer (for example, LMS-30 manufactured by Seishin Enterprise Co., Ltd.) with a laser diffraction / scattering type particle size distribution analyzer.
A particle size of 1 μm or more and 20 μm or less is preferable, and a center particle size of 1 μm or more and 20 μm or less is preferable because it is easy to synthesize a phosphor, is easily available, and is easy to form a phosphor layer. More preferably, it is 10 μm or less. For particle size distribution, less than 0.01 μm and 10
It is sufficient that the particles do not contain particles exceeding 00 μm, but for the same reason as the central particle diameter, a silicate phosphor having a distribution close to a normal distribution in the range of 1 μm or more and 50 μm or less is preferable.

The above-mentioned silicate phosphor is described in, for example, the above-mentioned document (J. Electrochemical So).
c. Vol. 115, No. 11 (1968) pp. 1
181-1184).

The characteristics of the silicate phosphor will be described in more detail below.

FIG. 4 is a diagram showing an example of an excitation spectrum and an emission spectrum of the above silicate phosphor. For comparison, the figure also shows an example of the excitation spectrum and the emission spectrum of the conventional YAG-based phosphor.

As can be seen from FIG. 4, the YAG-based phosphor is around 100 nm to 300 nm, and 300 nm to 360 nm.
Has excitation bands at three locations, near 400 nm to 550 nm, and absorbs light within each narrow wavelength range to
The silicate phosphor used in the present invention is 250 to 300, while the yellow fluorescing phosphor has an emission peak in a yellow-green to yellow wavelength region of 50 to 580 nm.
having a excitation peak in the vicinity of nm, absorbing light in a wide wavelength range of 100 to 500 nm, and emitting yellowish fluorescence having an emission peak in a yellow-green to yellow-orange wavelength region of 550 to 600 nm. It is a phosphor. It is also found that under the excitation of near-ultraviolet light of more than 350 nm and less than 400 nm, it is a highly efficient phosphor far superior to the YAG-based phosphor.
In particular, under the excitation of near-ultraviolet light having a wavelength range of 370 to 390 nm, it can be seen that the conventional YAG phosphor does not substantially emit light, whereas the silicate phosphor emits highly efficient yellow light. .

Therefore, by including the silicate phosphor as the yellow phosphor particles 4 in the phosphor layer 2, the phosphor layer 2 emits a strong yellow light as a light emitting component under the excitation of near-ultraviolet light. Become.

The above a1, a2, b1, b2,
If the silicate phosphor has a composition within the numerical range of x and z, the excitation and emission spectra will be similar to those of the silicate phosphor illustrated in FIG.

In addition to the blue-based phosphor particles 3 and the yellow-based phosphor particles 4 described above, in order to improve the color rendering of white light, oxysulfidation mainly composed of a compound represented by the following chemical formula You may mix | blend red type fluorescent substance particles, such as a fluorescent substance.

(Ln _1-x Eu _x ) O ₂ S Here, Ln is at least one rare earth element selected from Sc, Y, La and Gd, and x is a numerical value satisfying 0 <x <1.

(Embodiment 2) Hereinafter, an embodiment of the semiconductor light emitting device of the present invention will be described with reference to the drawings. 5 to 7 are views showing examples of the semiconductor light emitting device according to the present invention.

FIG. 5 shows a stand type illumination device using the semiconductor light emitting device of the present invention, FIG. 6 shows a display device for image display using the semiconductor light emitting device of the present invention, and FIG. 1 shows a display device for displaying numbers using a semiconductor light emitting element.

5 to 7, the semiconductor light emitting element 10 is the semiconductor light emitting element of the present invention described in the first embodiment.

In FIG. 5, 11 is a semiconductor light emitting device 10.
Switch 11 for turning on the switch
When N, the semiconductor light emitting element 10 is energized and emits light.

The illuminating device of FIG. 5 is shown as a preferred example, and the semiconductor light emitting device according to the present invention is not limited to this embodiment. For example, in addition to the semiconductor light emitting element 10 of the present invention, It may be combined with an LED that emits light of blue, green, yellow, red, or the like. Further, the emission color, size, number, shape of the light emitting portion, etc. of the semiconductor light emitting element 10 are not particularly limited.

Further, in the illuminating device of this example, the preferable color temperature is 2000 K or more and 12000 K or less, preferably 3000 K or more and 10000 K or less, more preferably 3500 K or more and 8000 K or less, but the illuminating device as the semiconductor light emitting device according to the present invention. Is not limited to the above color temperature.

6 and 7 show an image display device and a numerical display device as examples of the display device as the semiconductor light emitting device according to the present invention, the semiconductor light emitting device according to the present invention is not limited thereto. Not a thing.

A display device as an example of the semiconductor light emitting device may be configured using the semiconductor light emitting element 10 described in the first embodiment, as in the case of the above lighting device.
Further, it may be combined with a semiconductor light emitting element other than the semiconductor light emitting element 10, for example, an LED that emits light of blue, green, yellow, red, or the like. Further, the emission color, size, number, shape of the light emitting portion, arrangement of the semiconductor light emitting elements, and the like of the semiconductor light emitting element 10 are not particularly limited, and the appearance shape is not particularly limited.

The image display device has a width of 1 cm or more and 10 m or less, a height of 1 cm or more and 10 m or less, and a depth of 5 mm.
It can be arbitrarily manufactured within the range of 5 m or less, and the number of semiconductor light emitting elements can be set according to this dimension.

In the numeral display device shown in FIG. 6, 10 is the semiconductor light emitting element described in the first embodiment. Also in this numerical display device, as in the case of the image display device,
The emission color, size, number, and pixel shape of the semiconductor light emitting element 10 are not limited. The display characters are not limited to numbers, and may be kanji, katakana, alphabets, Greek characters, or the like.

Incidentally, in the semiconductor light emitting device as shown in FIGS. 5 to 7, if the light emitting device is constructed by using a plurality of semiconductor light emitting elements 10 using only one kind of LED chip, It is possible to operate each semiconductor light emitting element with the same driving voltage and injection current, and it is also possible to make the characteristic fluctuations of the light emitting element due to external factors such as ambient temperature almost the same, and the light emitting element The rate of change in emission intensity and color tone can be reduced, and the circuit configuration of the light emitting device can be simplified.

Further, when the semiconductor light emitting device is constructed by using the semiconductor light emitting element having a flat pixel surface, it is possible to provide a light emitting device having a flat light emitting surface such as a display device having a flat display surface and a lighting device emitting surface light. It is possible to provide an image display device having excellent image quality and a lighting device having excellent design.

The semiconductor light-emitting device according to the present invention is a high-luminance light-emitting device by forming the light-emitting device using the semiconductor light-emitting element described in the first embodiment, which can obtain high-luminance white light. .

[0079]

[Example] (Example 1) A blue-based phosphor (M2 _1-x E
u _x ) (M3 _1-y1 Mn _y1 ) Al ₁₀ O ₁₇ (however, M2
Is at least one alkaline earth metal element selected from Ba, Sr, and Ca, M3 is at least one element selected from Mg and Zn, and x and y1 are 0 <x <, respectively.
It is a numerical value that satisfies 1, 0 ≦ y1 <0.05. (Ba, Sr) MgAl ₁₀ O ₁₇ : Eu represented by the chemical formula
²⁺ , Mn ²⁺ aluminate blue phosphor (M2 = 0.9Ba
+ 0.1Sr, x = 0.1, y = 0.015) and the yellow phosphor is (Sr _1-a1-b1-x Ba _a1 Ca _b1 Eu _x ) ₂ S
iO ₄ (where a1, b1 and x are respectively 0 ≦ a1 ≦
It is a numerical value that satisfies 0.3, 0 ≦ b1 ≦ 0.8, and 0 <x <1. (Sr, Ba) ₂ SiO ₄ : Eu ²⁺ silicate yellow phosphor (a1 = 0.1, b1 = 0, x = 0.02) having an orthorhombic crystal structure. And the mixing weight ratio of the blue phosphor and the yellow phosphor is 35:15,
The weight ratio of the epoxy resin and the mixed phosphor is 120: 5.
0, the semiconductor light emitting device (Example 1) was manufactured with the substantial thickness of the phosphor layer being about 600 μm.

The structure of the semiconductor light emitting device is as shown in FIG.
The semiconductor light-emitting device has a structure in which a phosphor layer formed of an epoxy resin containing phosphor particles is provided in the cup while being electrically connected. The near-ultraviolet LED has a light emitting layer made of a gallium nitride-based compound semiconductor and has a wavelength of 38
InGaN-based near-ultraviolet L having an emission peak at 0 nm
It was ED.

The emission spectrum of the blue phosphor under excitation of near-ultraviolet light having a wavelength of 380 nm from this near-ultraviolet LED is shown in FIG. 8 (a), and the emission spectrum of the yellow phosphor is shown in FIG. 8 (b). It was

For comparison, the above (Ba, Sr) MgA
l ₁₀ O ₁₇ : Eu ²⁺ , Mn ²⁺ aluminate blue phosphor is a blue phosphor, BaMgAl ₁₀ O ₁₇ : Eu ²⁺ , Mn ²⁺ (B
_{a 0. 9 Eu 0.1 Mg 0.7 Mn} 0.3 Al 10 O 17) green phosphor aluminates green ^{_{phosphor, LaO 2 S: Eu 3+ (}} La
A semiconductor light-emitting device (Comparative Example 1) similar to the above was manufactured by using _0.9 Eu _0.1 O ₂ S) oxysulfide red phosphor as a red phosphor and not containing a yellow phosphor in the phosphor layer. Comparative Example 1
In the semiconductor light-emitting element, the mixed weight ratio of the aluminate blue phosphor, the aluminate green phosphor, and the oxysulfide red phosphor is 7:13:40, and the weight ratio of the epoxy resin and the mixed phosphor is The substantial thickness of the phosphor layer is the same as that of the semiconductor light emitting device of Example 1.

For the near-ultraviolet LED of the semiconductor light emitting device, 10
(x, y) in the CIE chromaticity diagram of the white light from the semiconductor light emitting element by energizing mA to operate the near-ultraviolet LED
Value, relative value of luminous flux, instantaneous multi-photometry system (MCP
D-7000: manufactured by Otsuka Electronics Co., Ltd.). The results are shown in Table 1. As can be seen from Table 1, under the white light of approximately the same chromaticity, the semiconductor light emitting device according to the present invention (Example 1) has a higher luminous flux (about 3.7).
Times) was obtained.

[0084]

[Table 1]

[0085]

The semiconductor light emitting device of the present invention is a near ultraviolet LE.
D, a blue-based phosphor that absorbs near-ultraviolet light in the vicinity of 350 to 410 nm emitted by this near-ultraviolet LED and has an emission peak in a wavelength region of 400 nm or more and less than 500 nm, and 550 nm or more and 600 nm that absorbs the near-ultraviolet light. A semiconductor light emitting element that emits white light with a high luminous flux can be obtained by combining with a phosphor layer containing a yellow phosphor having an emission peak in a wavelength region of less than. In particular, by using the silicate phosphor as the yellow phosphor, a highly efficient semiconductor light emitting device far surpassing the conventional semiconductor light emitting device using the YAG phosphor can be obtained.

The light emitting device of the present invention has a phosphor layer containing two kinds of phosphors, a blue phosphor and a yellow phosphor, which efficiently emits light under near-ultraviolet light excitation, and has a high luminous flux. By configuring a light emitting device using a semiconductor light emitting element,
A light emitting device that emits white light with a high luminous flux can be provided.

[Brief description of drawings]

FIG. 1 is a vertical cross-sectional view of a semiconductor light emitting device that is an embodiment of the present invention.

FIG. 2 is a vertical cross-sectional view of a semiconductor light emitting device that is an embodiment of the present invention.

FIG. 3 is a vertical cross-sectional view of a semiconductor light emitting device that is an embodiment of the present invention.

FIG. 4 is a diagram showing an example of emission and excitation spectra of a silicate phosphor and a YAG phosphor.

FIG. 5 is a perspective view of a light emitting device according to an embodiment of the present invention.

FIG. 6 is a perspective view of a light emitting device according to an embodiment of the present invention.

FIG. 7 is a perspective view of a light emitting device according to an embodiment of the present invention.

FIG. 8A shows an emission spectrum of a blue phosphor, and FIG. 8B shows an emission spectrum of a yellow phosphor.

[Explanation of symbols]

1 near-ultraviolet LED 2 Phosphor layer 3 Blue phosphor particles 4 Yellow phosphor particles 5 Submount element 6 lead frame 7 cups 8 Sealing resin 9 housing 10 Semiconductor light emitting device 11 switch

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) C09K 11/59 CPX C09K 11/59 CPX 11/64 11/64 11/73 11/73 (72) Inventor Katsuaki Iwama 1006 Kadoma, Kadoma, Osaka Prefecture Matsuda Denki Sangyo Co., Ltd. (72) Inventor Hiromi Kitahara 1006 Kadoma, Kadoma City, Osaka Pref. Matsuda Denki Sangyo Co., Ltd. (72) Tadaaki Ikeda, Kadoma, Osaka Address 1006 Matsushita Electric Industrial Co., Ltd. F term (reference) 4H001 CA02 CA04 CA05 XA08 XA12 XA14 XA15 XA17 XA20 XA30 XA38 XA56 YA25 YA63 5F041 AA11 CA34 CA40 DA18 DA19 DA44 DA46 EE25

Claims (6)

[Claims] 1. A near-ultraviolet light emitting diode that emits light having an emission peak in a wavelength region of more than 350 nm and 410 nm or less, and a visible wavelength region of 380 nm or more and 780 nm or less by absorbing near ultraviolet light emitted by the near-ultraviolet light emitting diode. In combination with a phosphor layer containing a plurality of phosphors that emit fluorescence having an emission peak, and the emission chromaticity point (x, y) in the CIE chromaticity diagram is 0.21 ≦ x ≦ 0.48, 0.19. ≤
A semiconductor light-emitting device that emits white light in the range of y ≦ 0.45, wherein the phosphor layer has a wavelength of 550 nm or more and less than 600 nm under irradiation with near-ultraviolet light having a wavelength range of 380 nm and its vicinity. Yellow fluorescent substance that emits yellow fluorescent light having an emission peak in a region and 400 nm or more and 500 n
A semiconductor light-emitting device comprising two types of phosphors, which are blue-based phosphors that emit blue-based fluorescence having an emission peak in a wavelength region of less than m. 2. The semiconductor light emitting device according to claim 1, wherein the yellow phosphor is a silicate phosphor mainly composed of a compound represented by the following chemical formula. (Sr _1-a1-b1-x Ba _a1 Ca _b1 Eu _x ) ₂ SiO ₄ where a1, b1 and x are respectively 0 ≦ a1 ≦ 0.3,
It is a numerical value that satisfies 0 ≦ b1 ≦ 0.8 and 0 <x <1. 3. The semiconductor light emitting device according to claim 2, wherein the silicate phosphor is a silicate phosphor mainly having a compound represented by the following chemical formula and having an orthorhombic crystal structure. (Sr _1-a1-b2-x Ba _a1 Ca _b2 Eu _x ) ₂ SiO ₄ where a1, b2 and x are respectively 0 ≦ a1 ≦ 0.3,
It is a numerical value that satisfies 0 ≦ b2 ≦ 0.6 and 0 <x <1. 4. The blue-based phosphor is any one of the following blue-based phosphors (1) and (2).
The semiconductor light emitting device according to any one of 1. (1) Halophosphate phosphor (M1 _1-x Eu _x ) ₁₀ (PO ₄ ) ₆ Cl ₂ which is mainly composed of a compound represented by the following chemical formula, where M1 is Ba, Sr, Ca or Mg. At least one alkaline earth metal element selected, x is 0 <x
It is a numerical value that satisfies <1. (2) Aluminate phosphor (M2 _1-x Eu _x ) (M3 _1-y1 Mn _y1 ) Al ₁₀ O ₁₇ mainly composed of a compound represented by the following chemical formula, where M2 is Ba, Sr, At least one alkaline earth metal element selected from Ca, M3 is Mg, Zn
At least one element selected from x and y1 are numerical values that satisfy 0 <x <1 and 0 ≦ y1 <0.05, respectively. 5. The semiconductor light emitting device according to claim 1, wherein the near ultraviolet light emitting diode is a near ultraviolet light emitting diode having a light emitting layer made of a gallium nitride compound semiconductor. 6. A semiconductor light emitting device comprising the semiconductor light emitting element according to claim 1.