JP2003100864A - 二重ダマシーン構造体を形成する方法 - Google Patents
二重ダマシーン構造体を形成する方法Info
- Publication number
- JP2003100864A JP2003100864A JP2002199839A JP2002199839A JP2003100864A JP 2003100864 A JP2003100864 A JP 2003100864A JP 2002199839 A JP2002199839 A JP 2002199839A JP 2002199839 A JP2002199839 A JP 2002199839A JP 2003100864 A JP2003100864 A JP 2003100864A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- layer
- trench
- etching
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000009977 dual effect Effects 0.000 title claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 139
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 108091008717 AR-A Proteins 0.000 description 1
- 101150016011 RR11 gene Proteins 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US901331 | 1992-06-19 | ||
US09/901,331 US6605540B2 (en) | 2001-07-09 | 2001-07-09 | Process for forming a dual damascene structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003100864A true JP2003100864A (ja) | 2003-04-04 |
Family
ID=25413959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002199839A Pending JP2003100864A (ja) | 2001-07-09 | 2002-07-09 | 二重ダマシーン構造体を形成する方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6605540B2 (fr) |
EP (1) | EP1280197B1 (fr) |
JP (1) | JP2003100864A (fr) |
DE (1) | DE60235338D1 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004356521A (ja) * | 2003-05-30 | 2004-12-16 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2007019258A (ja) * | 2005-07-07 | 2007-01-25 | Toshiba Corp | 半導体装置 |
KR101016340B1 (ko) | 2003-12-15 | 2011-02-22 | 매그나칩 반도체 유한회사 | 고주파 반도체 장치의 인덕터 제조방법 |
US8227339B2 (en) | 2009-11-02 | 2012-07-24 | International Business Machines Corporation | Creation of vias and trenches with different depths |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1316108B9 (fr) * | 2000-08-18 | 2007-10-03 | Tokyo Electron Limited | Procede de fabrication d'un dispositif semi-conducteur comprenant un film intermediaire de nitrure de silicium faiblement dielectrique |
US6605540B2 (en) * | 2001-07-09 | 2003-08-12 | Texas Instruments Incorporated | Process for forming a dual damascene structure |
US7183201B2 (en) * | 2001-07-23 | 2007-02-27 | Applied Materials, Inc. | Selective etching of organosilicate films over silicon oxide stop etch layers |
JP2003209166A (ja) * | 2002-01-17 | 2003-07-25 | Seiko Epson Corp | 半導体装置及びその製造方法 |
DE10219398B4 (de) * | 2002-04-30 | 2007-06-06 | Infineon Technologies Ag | Herstellungsverfahren für eine Grabenanordnung mit Gräben unterschiedlicher Tiefe in einem Halbleitersubstrat |
US20050059233A1 (en) * | 2003-09-12 | 2005-03-17 | Ming-Tsong Wang | Process for forming metal damascene structure to prevent dielectric layer peeling |
CN1299348C (zh) * | 2003-09-28 | 2007-02-07 | 中芯国际集成电路制造(上海)有限公司 | 集成电路的倾斜镶嵌内连接结构的形成方法 |
US7504727B2 (en) * | 2004-05-14 | 2009-03-17 | International Business Machines Corporation | Semiconductor interconnect structure utilizing a porous dielectric material as an etch stop layer between adjacent non-porous dielectric materials |
US7235489B2 (en) * | 2004-05-21 | 2007-06-26 | Agere Systems Inc. | Device and method to eliminate shorting induced by via to metal misalignment |
US7067435B2 (en) * | 2004-09-29 | 2006-06-27 | Texas Instruments Incorporated | Method for etch-stop layer etching during damascene dielectric etching with low polymerization |
KR100641485B1 (ko) * | 2004-12-28 | 2006-11-01 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조 방법 |
US7394154B2 (en) * | 2005-09-13 | 2008-07-01 | International Business Machines Corporation | Embedded barrier for dielectric encapsulation |
US7416953B2 (en) * | 2005-10-31 | 2008-08-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical MIM capacitors and method of fabricating the same |
US20070290347A1 (en) * | 2006-06-19 | 2007-12-20 | Texas Instruments Incorporated | Semiconductive device having resist poison aluminum oxide barrier and method of manufacture |
JP5128851B2 (ja) * | 2007-05-30 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US7994639B2 (en) * | 2007-07-31 | 2011-08-09 | International Business Machines Corporation | Microelectronic structure including dual damascene structure and high contrast alignment mark |
DE102008063430B4 (de) * | 2008-12-31 | 2016-11-24 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung eines Metallisierungssystem eines Halbleiterbauelements mit zusätzlich verjüngten Übergangskontakten |
CN101905854B (zh) * | 2009-06-04 | 2012-08-22 | 台湾积体电路制造股份有限公司 | 电子元件及其制法、电子系统 |
US10586689B2 (en) * | 2009-07-31 | 2020-03-10 | Guardian Europe S.A.R.L. | Sputtering apparatus including cathode with rotatable targets, and related methods |
US20130288474A1 (en) * | 2012-04-27 | 2013-10-31 | Applied Materials, Inc. | Methods for fabricating dual damascene interconnect structures |
US8986921B2 (en) * | 2013-01-15 | 2015-03-24 | International Business Machines Corporation | Lithographic material stack including a metal-compound hard mask |
US9390964B2 (en) | 2013-03-15 | 2016-07-12 | Applied Materials, Inc. | Methods for fabricating dual damascene structures in low temperature dielectric materials |
US9917027B2 (en) * | 2015-12-30 | 2018-03-13 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with aluminum via structures and methods for fabricating the same |
KR102285787B1 (ko) * | 2017-03-03 | 2021-08-04 | 삼성전자 주식회사 | 3차원 반도체 소자 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6380096B2 (en) * | 1998-07-09 | 2002-04-30 | Applied Materials, Inc. | In-situ integrated oxide etch process particularly useful for copper dual damascene |
US6103456A (en) | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
KR20000013397A (ko) * | 1998-08-07 | 2000-03-06 | 윤종용 | 트렌치 격리 형성 방법 |
US6060380A (en) | 1998-11-06 | 2000-05-09 | Advanced Micro Devices, Inc. | Antireflective siliconoxynitride hardmask layer used during etching processes in integrated circuit fabrication |
KR100300628B1 (ko) * | 1999-02-08 | 2001-09-26 | 윤종용 | 실리콘 옥시나이트라이드 보호층을 갖는 반도체 장치 및 그 제조 방법 |
US6228760B1 (en) * | 1999-03-08 | 2001-05-08 | Taiwan Semiconductor Manufacturing Company | Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish |
US6235653B1 (en) | 1999-06-04 | 2001-05-22 | Taiwan Semiconductor Manufacturing Company | Ar-based si-rich oxynitride film for dual damascene and/or contact etch stop layer |
US6326301B1 (en) * | 1999-07-13 | 2001-12-04 | Motorola, Inc. | Method for forming a dual inlaid copper interconnect structure |
CN1192427C (zh) | 1999-08-25 | 2005-03-09 | 因芬尼昂技术股份公司 | 制造具有至少一个金属化平面的集成电路的方法 |
US6391761B1 (en) * | 1999-09-20 | 2002-05-21 | Taiwan Semiconductor Manufacturing Company | Method to form dual damascene structures using a linear passivation |
US6429119B1 (en) * | 1999-09-27 | 2002-08-06 | Taiwan Semiconductor Manufacturing Company | Dual damascene process to reduce etch barrier thickness |
US6222241B1 (en) * | 1999-10-29 | 2001-04-24 | Advanced Micro Devices, Inc. | Method and system for reducing ARC layer removal by providing a capping layer for the ARC layer |
US6329281B1 (en) * | 1999-12-03 | 2001-12-11 | Agere Systems Guardian Corp. | Methods for fabricating a multilevel interconnection for an integrated circuit device utilizing a selective overlayer |
US6342448B1 (en) * | 2000-05-31 | 2002-01-29 | Taiwan Semiconductor Manufacturing Company | Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process |
US6410437B1 (en) * | 2000-06-30 | 2002-06-25 | Lam Research Corporation | Method for etching dual damascene structures in organosilicate glass |
US6475929B1 (en) * | 2001-02-01 | 2002-11-05 | Advanced Micro Devices, Inc. | Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant |
US6511922B2 (en) * | 2001-03-26 | 2003-01-28 | Applied Materials, Inc. | Methods and apparatus for producing stable low k FSG film for HDP-CVD |
US6605540B2 (en) * | 2001-07-09 | 2003-08-12 | Texas Instruments Incorporated | Process for forming a dual damascene structure |
-
2001
- 2001-07-09 US US09/901,331 patent/US6605540B2/en not_active Expired - Lifetime
-
2002
- 2002-07-09 DE DE60235338T patent/DE60235338D1/de not_active Expired - Lifetime
- 2002-07-09 EP EP02100794A patent/EP1280197B1/fr not_active Expired - Lifetime
- 2002-07-09 JP JP2002199839A patent/JP2003100864A/ja active Pending
-
2003
- 2003-06-27 US US10/608,286 patent/US7112532B2/en not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004356521A (ja) * | 2003-05-30 | 2004-12-16 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US7807567B2 (en) | 2003-05-30 | 2010-10-05 | Nec Electronics Corporation | Semiconductor device with interconnection structure for reducing stress migration |
JP4571785B2 (ja) * | 2003-05-30 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR101016340B1 (ko) | 2003-12-15 | 2011-02-22 | 매그나칩 반도체 유한회사 | 고주파 반도체 장치의 인덕터 제조방법 |
JP2007019258A (ja) * | 2005-07-07 | 2007-01-25 | Toshiba Corp | 半導体装置 |
JP4550678B2 (ja) * | 2005-07-07 | 2010-09-22 | 株式会社東芝 | 半導体装置 |
US8227339B2 (en) | 2009-11-02 | 2012-07-24 | International Business Machines Corporation | Creation of vias and trenches with different depths |
US8703604B2 (en) | 2009-11-02 | 2014-04-22 | International Business Machines Corporation | Creation of vias and trenches with different depths |
US8907458B2 (en) | 2009-11-02 | 2014-12-09 | International Business Machines Corporation | Creation of vias and trenches with different depths |
Also Published As
Publication number | Publication date |
---|---|
US20030008512A1 (en) | 2003-01-09 |
US6605540B2 (en) | 2003-08-12 |
EP1280197B1 (fr) | 2010-02-17 |
EP1280197A1 (fr) | 2003-01-29 |
DE60235338D1 (fr) | 2010-04-01 |
US20040092113A1 (en) | 2004-05-13 |
US7112532B2 (en) | 2006-09-26 |
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