JP2003077867A - Moving stage for imprint lithography - Google Patents

Moving stage for imprint lithography

Info

Publication number
JP2003077867A
JP2003077867A JP2001267764A JP2001267764A JP2003077867A JP 2003077867 A JP2003077867 A JP 2003077867A JP 2001267764 A JP2001267764 A JP 2001267764A JP 2001267764 A JP2001267764 A JP 2001267764A JP 2003077867 A JP2003077867 A JP 2003077867A
Authority
JP
Japan
Prior art keywords
mold
sample
resist
pivot
moving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001267764A
Other languages
Japanese (ja)
Other versions
JP3588633B2 (en
Inventor
Hiroshi Hiroshima
Masanori Komuro
昌徳 古室
洋 廣島
Original Assignee
National Institute Of Advanced Industrial & Technology
独立行政法人産業技術総合研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial & Technology, 独立行政法人産業技術総合研究所 filed Critical National Institute Of Advanced Industrial & Technology
Priority to JP2001267764A priority Critical patent/JP3588633B2/en
Publication of JP2003077867A publication Critical patent/JP2003077867A/en
Application granted granted Critical
Publication of JP3588633B2 publication Critical patent/JP3588633B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Abstract

PROBLEM TO BE SOLVED: To enable uniform pressing of a mold against the surface of a specimen when a slant adjustment mechanism is attached on the sample side and the sample is moved by using a moving mechanism. SOLUTION: A strut 11 is fixed at an almost center of a surface plate 8 having a flat surface, and a pivot 12 is fixed on an upper end surface of the strut 11, as the slant adjustment mechanism. A moving stage 6 is fixed on the moving mechanism 10 which moves on the plane of the surface plate, a sample-holding member 5 is retained by the moving stage 6 via elastic members 7, and a silicon substrate 3 which has a resist 4 on the surface is held by the sample-holding member 5. The mold 2 is arranged directly above the pivot 12 so as to be movable vertically, and the moving mechanism 10 is moved in such a manner that the surface of the resist to which the mold 2 is to be transferred is positioned directly below the mold 2. When the mold is pressed against the resist at a prescribed position, the elastic members 7 are transformed so that the mold and silicon substrate 3 become in parallel with each other in the case that both of them are slanted relatively. As a result, a uniform pressing force can be applied to the resist.

Description

【発明の詳細な説明】Detailed Description of the Invention
【0001】[0001]
【発明の属する技術分野】本発明は、所定のパターンを
形成したモールドを試料表面のレジストに対して複数箇
所押圧するため、試料を支持するステージを移動するイ
ンプリントリソグラフィー装置の移動ステージに関し、
特に試料とモールドが相対的に傾斜しているときでも全
面に均一に押圧することができるようにしたインプリン
トリソグラフィー装置の移動ステージに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a moving stage of an imprint lithography apparatus that moves a stage that supports a sample in order to press a mold having a predetermined pattern against a resist on the surface of the sample.
Particularly, the present invention relates to a moving stage of an imprint lithography apparatus capable of uniformly pressing the entire surface even when the sample and the mold are relatively inclined.
【0002】[0002]
【従来の技術】近年、高密度メモリやシステムLSIに
代表される超LSIデバイスのダウンサイジングが進展
し、より微細化を行うことができる技術が要求されてお
り、そのため半導体製造プロセスの中でリソグラフィー
(転写)技術の重要性が増大している。その中でインプ
リントリソグラフィーは所定の回路パターンを形成した
モールドを、表面にレジストが塗布された試料基板に対
して押しつけ、パターンを転写する技術であって、種々
の方式が提案されており、例えば図3に示されるように
行われる。
2. Description of the Related Art In recent years, downsizing of ultra-LSI devices represented by high-density memory and system LSI has progressed, and a technique capable of further miniaturization has been required. Therefore, in the semiconductor manufacturing process, lithography is required. The importance of (transfer) technology is increasing. Among them, imprint lithography is a technique of pressing a mold on which a predetermined circuit pattern is formed against a sample substrate whose surface is coated with a resist to transfer the pattern, and various methods have been proposed. This is done as shown in FIG.
【0003】図3において、最初同図(a)に示すよう
にモールド材料30の表面に、転写すべきパターンの鏡
像に対応する反転パターンを電子ビームリソグラフィー
等により形成することにより、表面に所定の凹凸形状3
1を有するモールド32を作成する。一方、同図(b)
に示すように、パターンを形成しようとするシリコン基
板33上にPMMAなどのレジスト材料を塗布し硬化さ
せて、レジスト層34を形成する。
In FIG. 3, first, as shown in FIG. 3A, a reverse pattern corresponding to a mirror image of the pattern to be transferred is formed on the surface of the molding material 30 by electron beam lithography or the like, so that a predetermined surface is formed. Uneven shape 3
A mold 32 having 1 is created. On the other hand, FIG.
As shown in FIG. 3, a resist material such as PMMA is applied and cured on the silicon substrate 33 on which the pattern is to be formed to form the resist layer 34.
【0004】次いでこのレジスト層34備えたシリコン
基板33全体を約200℃程度に加熱し、レジスト層3
4を若干軟化させる。この状態で図6(c)に示すよう
に、前記モールド32の凹凸形状31を前記レジスト層
34の所定位置に配置し、凹凸形状31をレジスト層3
4に対して押しつける。このときレジスト層34は軟化
しているので、レジスト層34は凹凸形状31の凹部に
入り込み、レジスト層34は凹凸形状31とほぼ同一形
状となる。この状態で全体の温度を105℃程度に降下
させることによりレジスト層34を硬化させ、その後モ
ールド32を取り去る。このようにしてレジスト層34
には、所定形状の凹凸パターンが形成される。
Next, the entire silicon substrate 33 provided with the resist layer 34 is heated to about 200 ° C. to form the resist layer 3
Soften 4 slightly. In this state, as shown in FIG. 6C, the uneven shape 31 of the mold 32 is arranged at a predetermined position of the resist layer 34, and the uneven shape 31 is formed.
Press against 4. At this time, since the resist layer 34 is softened, the resist layer 34 enters the concave portions of the uneven shape 31, and the resist layer 34 has substantially the same shape as the uneven shape 31. In this state, the entire temperature is lowered to about 105 ° C. to cure the resist layer 34, and then the mold 32 is removed. In this way, the resist layer 34
A concave-convex pattern having a predetermined shape is formed on the.
【0005】なお、インプリントリソグラフィー方式に
おいては、上記のようなものの他、例えばモールドを石
英基板等の透明材料で作成し、転写される基板上には液
体状の光硬化性樹脂を塗布し、その上にモールドの凹凸
を押しつけ、凹凸内に液体状の光硬化性樹脂を流入さ
せ、この状態で透明なモールドの裏側から紫外線等を照
射して樹脂を硬化させ、その後モールドを取り去ること
により所定形状の凹凸パターンを形成する方式も提案さ
れている。
In the imprint lithography method, in addition to the above, for example, a mold is made of a transparent material such as a quartz substrate, and a liquid photocurable resin is applied on the substrate to be transferred, Press the unevenness of the mold on it, inject the liquid photocurable resin into the unevenness, and in this state irradiate ultraviolet rays from the back side of the transparent mold to cure the resin, and then remove the mold A method of forming a concavo-convex pattern has also been proposed.
【0006】上記のようなインプリントリソグラフィー
方式においては、モールドを試料基板に押しつける際の
押しつけ面内の圧力分布を一様にする必要がある。面内
の圧力分布を一様にするにはモールドと試料基板の平行
度を高める必要があり、両者が平行ではない場合はモー
ルド側もしくは試料側で相互の傾斜が調整されなければ
ならない。
In the imprint lithography method as described above, it is necessary to make uniform the pressure distribution in the pressing surface when the mold is pressed against the sample substrate. In order to make the in-plane pressure distribution uniform, it is necessary to increase the parallelism between the mold and the sample substrate, and when the two are not parallel, the mutual inclination must be adjusted on the mold side or the sample side.
【0007】上記のようにモールドを試料基板に対して
押しつけるに際して、面内の圧力分布を一様にするに
は、従来から、弾性体や支点を有し、支点まわりに傾斜
を変える傾斜調整機構を利用することが行われている。
モールド側に傾斜調整機構を使用した場合を図4、図5
の模式図に示す。図4においては、試料台35にレジス
ト36が塗布されたシリコン基板37が置かれ、モール
ド38が加圧機構40によってシリコン基板37上のレ
ジスト36に押しつけられる。図4は傾斜調整機構とし
てピボット構造41を利用した場合を示しており、例え
ば試料台35が加圧機構40に対して相対的に傾斜して
いる場合、加圧機構40によってモールド38をレジス
ト36に押しつけるとき、ピボット構造41がこの傾き
を吸収し、モールド38はレジスト36に対して均等な
力で押圧される。図5は前記図4の傾斜調整機構として
弾性体42を用いたものであり、弾性体42が傾きを吸
収することができ、図4に示すものと同様に、モールド
38はレジスト36に対して均等な力で押圧される。
In order to make the in-plane pressure distribution uniform when the mold is pressed against the sample substrate as described above, conventionally, an inclination adjusting mechanism having an elastic body or a fulcrum and changing the inclination around the fulcrum is used. Is being used.
4 and 5 show the case where the tilt adjusting mechanism is used on the mold side.
Is shown in the schematic diagram. In FIG. 4, the silicon substrate 37 coated with the resist 36 is placed on the sample table 35, and the mold 38 is pressed against the resist 36 on the silicon substrate 37 by the pressing mechanism 40. FIG. 4 shows a case where the pivot structure 41 is used as the tilt adjusting mechanism. For example, when the sample table 35 is tilted relative to the pressing mechanism 40, the pressing mechanism 40 causes the mold 38 to resist the mold 36. When pressed against, the pivot structure 41 absorbs this inclination, and the mold 38 is pressed against the resist 36 with a uniform force. FIG. 5 uses an elastic body 42 as the inclination adjusting mechanism of FIG. 4, and the elastic body 42 can absorb the inclination. As with the one shown in FIG. It is pressed with equal force.
【0008】前記の例は加圧側に傾斜調整機構を使用し
た例を示したが、試料側に傾斜調整機構を使用しても同
様の作用を行うことができ、その例を図6(a)、
(b)、(c)の模式図に示している。同図(a)は試
料台35をピボット構造43により支持した例を示し、
(b)は試料台35の底面に弾性体44を、また(c)
は試料台35とシリコン基板37の間に弾性体44を設
けた例を示している。これらの各方式のいずれにおいて
も、試料を移動させない場合は期待通りに傾斜調整機構
が機能する。
In the above example, the tilt adjusting mechanism is used on the pressurizing side. However, the same effect can be obtained by using the tilt adjusting mechanism on the sample side, as shown in FIG. 6 (a). ,
It is shown in the schematic diagrams of (b) and (c). FIG. 3A shows an example in which the sample table 35 is supported by the pivot structure 43,
(B) shows an elastic body 44 on the bottom surface of the sample table 35, and (c)
Shows an example in which an elastic body 44 is provided between the sample table 35 and the silicon substrate 37. In each of these methods, the tilt adjusting mechanism functions as expected when the sample is not moved.
【0009】[0009]
【発明が解決しようとする課題】上記のように、モール
ドをレジストに対して均等な力で押圧するため、ピボッ
トや弾性体からなる傾斜調整機構を、加圧側や加圧され
る側に設けるものにおいて、広い面のレジストに対して
モールドを複数の箇所に押しつける際には、傾斜調整機
構が図4及び図5に示すように加圧側に設けている場合
は全面に対して傾斜調整機構が作用するが、傾斜調整機
構が図6に示すように加圧される側に設けている場合に
は全面に対して機能させることができない。
As described above, in order to press the mold against the resist with a uniform force, an inclination adjusting mechanism including a pivot and an elastic body is provided on the pressurizing side and the pressurizing side. In the case of pressing the mold against a wide surface of the resist at a plurality of points, the inclination adjusting mechanism acts on the entire surface when the inclination adjusting mechanism is provided on the pressure side as shown in FIGS. 4 and 5. However, when the tilt adjusting mechanism is provided on the side where pressure is applied as shown in FIG. 6, it cannot function on the entire surface.
【0010】図7(a)、(b)、(c)には上記のよ
うな加圧される側に傾斜調整機構を付加した場合の問題
を模式的に示している。同図に示しているものは前記図
6(a)、(b)、(c)に示したものに対して試料移
動ステージ45を付加した例を示している。同図では課
題が理解しやすいようにモールドを傾けて図示している
が移動ステージ側が傾斜していても同様である。図7
(a)に示す例では、モールド38をレジスト36に押
しつけると、モールド38のA側のみが押し込まれ、B
側は押し込むことができず、全く傾斜調整が機能しな
い。また図3(b)に示す例も同様である。更に図3
(c)に示す例では基板37が変形すれば若干は傾斜調
整が機能すると考えられるが、A部における応力により
基板37が破損する可能性がある。このように、試料移
動を伴うインプリントリソグラフィーにおいて、モール
ド側への傾斜調整機構の付加が行えない場合の加圧され
る試料側での傾斜調整機構の実現が課題である。
7 (a), (b) and (c) schematically show the problem in the case where the tilt adjusting mechanism is added to the pressure side as described above. What is shown in the figure is an example in which a sample moving stage 45 is added to the ones shown in FIGS. 6A, 6B, and 6C. In the figure, the mold is tilted for easy understanding of the problem, but the same holds true when the moving stage side is tilted. Figure 7
In the example shown in (a), when the mold 38 is pressed against the resist 36, only the A side of the mold 38 is pressed and B
The side cannot be pushed in and tilt adjustment does not work at all. The example shown in FIG. 3B is also the same. Furthermore, FIG.
In the example shown in (c), if the substrate 37 is deformed, it is considered that the inclination adjustment will function to some extent, but the substrate 37 may be damaged by the stress in the A portion. As described above, in imprint lithography involving sample movement, it is a problem to realize a tilt adjusting mechanism on the side of a sample to be pressed when the tilt adjusting mechanism cannot be added to the mold side.
【0011】したがって本発明は、所定のパターンを形
成したモールドを試料表面のレジストに対して複数箇所
押圧する際、モールドを押しつけるレジスト側を相対的
に所定位置に移動するとき、モールドを押しつけられる
側に傾斜調整機構を設ける場合でも全ての位置でモール
ドをレジストに均等な圧力で加圧することができるよう
にしたインプリントリソグラフィー用移動ステージを提
供することを目的とする。
Therefore, according to the present invention, when the mold on which the predetermined pattern is formed is pressed against the resist on the sample surface at a plurality of positions, when the resist side for pressing the mold is moved to a predetermined position, the side for pressing the mold is relatively moved. An object of the present invention is to provide a moving stage for imprint lithography in which even if an inclination adjusting mechanism is provided, the mold can be pressed against the resist with a uniform pressure at all positions.
【0012】[0012]
【課題を解決するための手段】上記課題を解決するた
め、請求項1に係る発明は、定盤上の支柱に固定した傾
斜調整機構と、定盤上を移動可能に設けた移動ステージ
と、前記移動ステージ上に弾性部材を介して支持した試
料と、前記傾斜調整機構の上部に対向して上下動自在に
配置し、試料表面のレジストを押圧するモールドとを備
えたことを特徴とする、インプリントリソグラフィー用
移動ステージとしたものである。
In order to solve the above-mentioned problems, the invention according to claim 1 provides an inclination adjusting mechanism fixed to a support on a surface plate, a movable stage movably provided on the surface plate, A sample supported on the moving stage via an elastic member, and a mold that is arranged so as to face the upper part of the tilt adjusting mechanism and is movable up and down, and presses the resist on the sample surface. It is a moving stage for imprint lithography.
【0013】また、請求項2に係る発明は、前記傾斜調
整機構がピボット機構であることを特徴とする請求項1
記載のインプリントリソグラフィー用移動ステージとし
たものである。
The invention according to claim 2 is characterized in that the tilt adjusting mechanism is a pivot mechanism.
This is a moving stage for imprint lithography.
【0014】また、請求項3に係る発明は、前記傾斜調
整機構が弾性部材であることを特徴とする請求項1記載
のインプリントリソグラフィー用移動ステージとしたも
のである。
The invention according to claim 3 provides the movable stage for imprint lithography according to claim 1, wherein the tilt adjusting mechanism is an elastic member.
【0015】[0015]
【発明の実施の形態】図1(a)、(b)は本発明のイ
ンプリントリソグラフィー用移動ステージの基本的構成
を示す模式図であり、図1(a)は試料を移動させる状
態を示し、図1(b)はモールド保持部1上のモールド
2をシリコン基板3上のレジスト4に押しつける場合を
示している。シリコン基板3上の周辺部を保持する試料
保持部材5は、その下面と移動ステージ6の上面間にき
わめて小さいバネ常数を有する弾性部材7を介して支持
されている。移動ステージ6は定盤8上で自由に移動で
きる移動機構10上に固定され、それにより移動ステー
ジ6が定盤8上を平面内に移動するとき、移動ステージ
6に支持されているシリコン基板3も一体的に移動す
る。
1 (a) and 1 (b) are schematic views showing the basic structure of a moving stage for imprint lithography of the present invention, and FIG. 1 (a) shows a state in which a sample is moved. FIG. 1B shows a case where the mold 2 on the mold holder 1 is pressed against the resist 4 on the silicon substrate 3. The sample holding member 5 that holds the peripheral portion on the silicon substrate 3 is supported between the lower surface of the sample holding member 5 and the upper surface of the moving stage 6 via an elastic member 7 having an extremely small spring constant. The moving stage 6 is fixed on a moving mechanism 10 which can move freely on the surface plate 8, so that when the moving stage 6 moves on the surface plate 8 in a plane, the silicon substrate 3 supported by the moving stage 6 is moved. Also moves together.
【0016】定盤8の略中心位置にはシリコン基板3の
裏面に延びる支柱11が固定され、この支柱11の上端
面には傾斜調整機構としてのピボット機構12を設けて
いる。ピボット機構12は、支点を構成するピボット1
3と、このピボット13によって揺動自在に支持されそ
の上端面で試料基板8の裏面を受けるピボット受け14
とから構成されている。
A pillar 11 extending to the back surface of the silicon substrate 3 is fixed at a substantially central position of the surface plate 8, and a pivot mechanism 12 as an inclination adjusting mechanism is provided on an upper end surface of the pillar 11. The pivot mechanism 12 is a pivot 1 that constitutes a fulcrum.
3 and a pivot receiver 14 which is swingably supported by the pivot 13 and receives the back surface of the sample substrate 8 at its upper end surface.
It consists of and.
【0017】傾斜調整機構の一例としての上記ピボット
機構を図2に拡大して示している。このピボット機構に
おいては、円錐状の突起15を有し前記支点を構成する
ピボット13と、円錐状のくぼみ16を備えたピボット
受け14により構成され、ピボット受け14の円錐状の
くぼみ16の中心とピボット13の円錐の突起15の尖
端とが接触し、この点を中心として両者が相対的に傾斜
することができる。
The pivot mechanism as an example of the tilt adjusting mechanism is shown enlarged in FIG. In this pivot mechanism, a pivot 13 having a conical projection 15 and forming the fulcrum, and a pivot receiver 14 having a conical recess 16 are provided, and the center of the conical recess 16 of the pivot receiver 14 is formed. The tip of the conical protrusion 15 of the pivot 13 comes into contact with each other, and both can be relatively tilted about this point.
【0018】このような構成により、図1(a)の状態
においてシリコン基板3は周辺を弾性部材7で支持さ
れ、この弾性部材7を圧縮した状態でその裏面をピボッ
ト12の揺動部材14に支持されるか、或いはわずかに
間隙を有する状態で弾性部材7に支持されている。それ
により、移動機構10が定盤8上を移動するとき、ピボ
ット12の謡動部材14はシリコン基板3の裏面と軽く
接触し、或いは接触しない状態が保たれる。
With such a structure, in the state shown in FIG. 1A, the periphery of the silicon substrate 3 is supported by the elastic member 7, and the back surface of the silicon substrate 3 is compressed by the swing member 14 of the pivot 12. It is supported or is supported by the elastic member 7 with a slight gap. As a result, when the moving mechanism 10 moves on the surface plate 8, the moving member 14 of the pivot 12 is lightly contacted with the back surface of the silicon substrate 3 or is kept in a non-contact state.
【0019】モールド2をシリコン基板3上のレジスト
4に押しつける際、例えばモールド2が図示するように
傾斜していた場合には、図1(b)に示すようにモール
ド2の傾斜に合わせて両者が平行になるように弾性部材
7を圧縮してシリコン基板3が傾斜する。上記の傾斜は
モールド2とシリコン基板3の相対的なものであり、モ
ールド2側が水平であってシリコン基板3側が傾斜して
いても同様の作用を行い、両者が水平面に対して傾斜し
ていても同様である。
When the mold 2 is pressed against the resist 4 on the silicon substrate 3, for example, when the mold 2 is inclined as shown in the figure, both are adjusted according to the inclination of the mold 2 as shown in FIG. The elastic member 7 is compressed and the silicon substrate 3 is tilted so that they are parallel to each other. The above inclination is relative to the mold 2 and the silicon substrate 3. Even if the mold 2 side is horizontal and the silicon substrate 3 side is inclined, the same operation is performed, and both are inclined with respect to the horizontal plane. Is also the same.
【0020】モールド2がレジスト4を加圧するとき、
モールド2に対して加えられる押圧力の中心がピボット
12の尖端にほぼ一致しているときには、シリコン基板
3を支持する弾性部材7に対しては押圧力がほとんど作
用することなく、モールド2とシリコン基板3の傾斜が
一致した状態でインプリントが行われる。
When the mold 2 pressurizes the resist 4,
When the center of the pressing force applied to the mold 2 is substantially coincident with the tip of the pivot 12, the pressing force hardly acts on the elastic member 7 supporting the silicon substrate 3, and the mold 2 and the silicon are Imprinting is performed in a state where the inclinations of the substrate 3 match.
【0021】レジスト4の所定位置で上記のようなイン
プリントが行われた後、レジスト4の表面上の他の箇所
にインプリントを行うときには、移動機構10の移動に
よって次にインプリントを行う位置をモールド2の直下
に移動し、以下同様の作動を行う。
After performing the above-mentioned imprint at a predetermined position of the resist 4, when performing the imprint on another portion on the surface of the resist 4, the position of the next imprint by the movement of the moving mechanism 10. Is moved to directly below the mold 2, and the same operation is performed thereafter.
【0022】上記実施例においては、支柱11上に傾斜
調整機構としてピボットを用いたものを示したが、例え
ば図5に示すような弾性部材を用いても同様の作用を行
うことができ、更に、弾性体とピボット構造を組み合わ
せて使用することもできる。
In the above embodiment, the pivot is used as the tilt adjusting mechanism on the column 11. However, the same effect can be obtained by using an elastic member as shown in FIG. 5, for example. Alternatively, the elastic body and the pivot structure may be used in combination.
【0023】[0023]
【発明の効果】以上説明したように本発明のインプリン
トリソグラフィー用移動ステージは、試料側に傾斜調整
機構を組み込みながら、試料移動を行う場合にも傾斜調
整機能を有効に行うことができる。特に本発明は、モー
ルド側に傾斜調整機能を付加することが困難な場合にお
いて有効である。
As described above, the moving stage for imprint lithography of the present invention can effectively perform the tilt adjusting function even when the sample is moved while incorporating the tilt adjusting mechanism on the sample side. The present invention is particularly effective when it is difficult to add a tilt adjusting function to the mold side.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の模式図であり、(a)はモールドをレ
ジストから離し、試料を移動する状態を示し、(b)は
モールド保持部上のモールドをシリコン基板上のレジス
トに押しつける状態を示している。
FIG. 1 is a schematic diagram of the present invention, in which (a) shows a state in which a mold is separated from a resist and a sample is moved, and (b) shows a state in which a mold on a mold holder is pressed against a resist on a silicon substrate. Shows.
【図2】傾斜調整機構としてのピボット機構を示す図で
ある。
FIG. 2 is a diagram showing a pivot mechanism as a tilt adjusting mechanism.
【図3】インプリントリソグラフィーによるパターン転
写手法を示す図である。
FIG. 3 is a diagram showing a pattern transfer method by imprint lithography.
【図4】モールド押圧側にピボット構造の傾斜調整機構
を備えたインプリントリソグラフィ装置の模式図であ
る。
FIG. 4 is a schematic view of an imprint lithography apparatus provided with a tilt adjusting mechanism having a pivot structure on the mold pressing side.
【図5】モールド押圧側に弾性部材からなる傾斜調整機
構を備えたインプリントリソグラフィ装置の模式図であ
る。
FIG. 5 is a schematic view of an imprint lithography apparatus provided with a tilt adjusting mechanism made of an elastic member on the mold pressing side.
【図6】試料側に傾斜調整機構を設けたインプリントリ
ソグラフィー装置の模式図である。
FIG. 6 is a schematic diagram of an imprint lithography apparatus provided with an inclination adjusting mechanism on the sample side.
【図7】試料側に傾斜調整機構と移動機構を設けた、イ
ンプリントリソグラフィー装置の模式図である。
FIG. 7 is a schematic diagram of an imprint lithography apparatus in which a tilt adjusting mechanism and a moving mechanism are provided on the sample side.
【符号の説明】[Explanation of symbols]
1 モールド保持部 2 モールド 3 シリコン基板 4 レジスト 5 試料保持部材 6 移動ステージ 7 弾性部材 8 定盤 10 移動機構 11 支柱 12 ピボット機構 13 ピボット 14 ピボット受け 15 突起 16 くぼみ 1 Mold holder 2 mold 3 Silicon substrate 4 resist 5 Sample holding member 6 moving stages 7 Elastic member 8 surface plate 10 Moving mechanism 11 props 12 Pivot mechanism 13 pivot 14 Pivot holder 15 protrusions 16 hollows

Claims (3)

    【特許請求の範囲】[Claims]
  1. 【請求項1】 定盤上の支柱に固定した傾斜調整機構
    と、 定盤上を移動可能に設けた移動ステージと、 前記移動ステージ上に弾性部材を介して支持した試料
    と、 前記傾斜調整機構の上部に対向して上下動自在に配置
    し、試料表面のレジストを押圧するモールドとを備えた
    ことを特徴とする、インプリントリソグラフィー用移動
    ステージ。
    1. An inclination adjusting mechanism fixed to a column on a surface plate, a moving stage movably provided on the surface plate, a sample supported on the moving stage via an elastic member, and the inclination adjusting mechanism. A movable stage for imprint lithography, which is arranged so as to be vertically movable so as to face the upper part of the mold and which presses the resist on the sample surface.
  2. 【請求項2】 前記傾斜調整機構がピボット機構である
    ことを特徴とする請求項1記載のインプリントリソグラ
    フィー用移動ステージ。
    2. The moving stage for imprint lithography according to claim 1, wherein the tilt adjusting mechanism is a pivot mechanism.
  3. 【請求項3】 前記傾斜調整機構が弾性部材であること
    を特徴とする請求項1記載のインプリントリソグラフィ
    ー用移動ステージ。
    3. The moving stage for imprint lithography according to claim 1, wherein the tilt adjusting mechanism is an elastic member.
JP2001267764A 2001-09-04 2001-09-04 Moving stage for imprint lithography Active JP3588633B2 (en)

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JP2006237395A (en) * 2005-02-25 2006-09-07 Toshiba Mach Co Ltd Transfer device
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JP2007180315A (en) * 2005-12-28 2007-07-12 Toshiba Mach Co Ltd Transferring device
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JP2007305945A (en) * 2006-05-15 2007-11-22 Toyo Gosei Kogyo Kk Mold supporting structure and mold supporting method
US7412926B2 (en) 2004-09-30 2008-08-19 Kabushiki Kaisha Toshiba Imprint apparatus and imprint method
JP2009043998A (en) * 2007-08-09 2009-02-26 Canon Inc Imprinting method and imprinting device
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US20100289184A1 (en) * 2006-11-28 2010-11-18 Wei Zhang Die Imprint By Double Side Force-Balanced Press For Step-And-Repeat Imprint Lithography
US7972553B2 (en) 2004-05-07 2011-07-05 Obducat Ab Method for imprint lithography at constant temperature
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