JP2003046094A - ショットキーバリアダイオードおよびその製造方法 - Google Patents

ショットキーバリアダイオードおよびその製造方法

Info

Publication number
JP2003046094A
JP2003046094A JP2001228047A JP2001228047A JP2003046094A JP 2003046094 A JP2003046094 A JP 2003046094A JP 2001228047 A JP2001228047 A JP 2001228047A JP 2001228047 A JP2001228047 A JP 2001228047A JP 2003046094 A JP2003046094 A JP 2003046094A
Authority
JP
Japan
Prior art keywords
electrode
layer
compound semiconductor
schottky
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001228047A
Other languages
English (en)
Japanese (ja)
Inventor
Tetsuo Asano
哲郎 浅野
Katsuaki Onoda
克明 小野田
Yoshifumi Nakajima
好史 中島
Shigeyuki Murai
成行 村井
Hisaaki Tominaga
久昭 冨永
Koichi Hirata
耕一 平田
Mikito Sakakibara
幹人 榊原
Hidetoshi Ishihara
秀俊 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2001228047A priority Critical patent/JP2003046094A/ja
Priority to TW091116221A priority patent/TW548845B/zh
Priority to US10/205,603 priority patent/US20030025175A1/en
Priority to US10/205,620 priority patent/US6682968B2/en
Priority to KR1020020044133A priority patent/KR100612188B1/ko
Priority to CNB02127231XA priority patent/CN1314131C/zh
Priority to EP02017079A priority patent/EP1280210A3/en
Publication of JP2003046094A publication Critical patent/JP2003046094A/ja
Priority to US11/103,598 priority patent/US20050179106A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10338—Indium gallium phosphide [InGaP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP2001228047A 2000-07-27 2001-07-27 ショットキーバリアダイオードおよびその製造方法 Pending JP2003046094A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001228047A JP2003046094A (ja) 2001-07-27 2001-07-27 ショットキーバリアダイオードおよびその製造方法
TW091116221A TW548845B (en) 2001-07-27 2002-07-22 Schottky barrier diode and method for producing the same
US10/205,603 US20030025175A1 (en) 2001-07-27 2002-07-26 Schottky barrier diode
US10/205,620 US6682968B2 (en) 2000-07-27 2002-07-26 Manufacturing method of Schottky barrier diode
KR1020020044133A KR100612188B1 (ko) 2001-07-27 2002-07-26 쇼트키 배리어 다이오드 및 그의 제조 방법
CNB02127231XA CN1314131C (zh) 2001-07-27 2002-07-29 肖特基势垒二极管及其制造方法
EP02017079A EP1280210A3 (en) 2001-07-27 2002-07-29 Schottky barrier diode and manufacturing method of schottky barrier diode
US11/103,598 US20050179106A1 (en) 2001-07-27 2005-04-12 Schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001228047A JP2003046094A (ja) 2001-07-27 2001-07-27 ショットキーバリアダイオードおよびその製造方法

Publications (1)

Publication Number Publication Date
JP2003046094A true JP2003046094A (ja) 2003-02-14

Family

ID=19060611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001228047A Pending JP2003046094A (ja) 2000-07-27 2001-07-27 ショットキーバリアダイオードおよびその製造方法

Country Status (4)

Country Link
JP (1) JP2003046094A (zh)
KR (1) KR100612188B1 (zh)
CN (1) CN1314131C (zh)
TW (1) TW548845B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120898A (ja) * 2004-10-22 2006-05-11 Mitsubishi Electric Corp ショットキーバリアダイオード

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100463425B1 (ko) * 2002-10-04 2004-12-23 삼성전기주식회사 광픽업용 광검출기 집적회로의 포토다이오드 셀 구조 및그 제조 방법
KR101058593B1 (ko) 2009-09-08 2011-08-22 삼성전기주식회사 반도체 소자 및 그 제조 방법
CN108022837B (zh) * 2017-11-14 2020-02-11 厦门市三安集成电路有限公司 一种制备hbt基极的蚀刻工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2432550A1 (fr) * 1978-08-04 1980-02-29 Sueddeutsche Kalkstickstoff Procede pour la fabrication d'un melange de desulfuration pulverulent facilement fluidifiable
GB2137412B (en) * 1983-03-15 1987-03-04 Standard Telephones Cables Ltd Semiconductor device
JPH07211924A (ja) * 1994-01-17 1995-08-11 Nippondenso Co Ltd ショットキーダイオード及びその製造方法
JPH0897234A (ja) * 1994-09-22 1996-04-12 Mitsubishi Electric Corp 半導体装置の電極，及びその製造方法
JP2679653B2 (ja) * 1994-12-05 1997-11-19 日本電気株式会社 半導体装置
JP3319514B2 (ja) * 1999-09-17 2002-09-03 日本電気株式会社 Ｉｉｉ−ｖ族化合物半導体結晶積層体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120898A (ja) * 2004-10-22 2006-05-11 Mitsubishi Electric Corp ショットキーバリアダイオード

Also Published As

Publication number Publication date
CN1314131C (zh) 2007-05-02
TW548845B (en) 2003-08-21
KR100612188B1 (ko) 2006-08-16
KR20030010553A (ko) 2003-02-05
CN1400671A (zh) 2003-03-05

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