JP2003045673A - Organic electroluminescent element - Google Patents
Organic electroluminescent elementInfo
- Publication number
- JP2003045673A JP2003045673A JP2001225665A JP2001225665A JP2003045673A JP 2003045673 A JP2003045673 A JP 2003045673A JP 2001225665 A JP2001225665 A JP 2001225665A JP 2001225665 A JP2001225665 A JP 2001225665A JP 2003045673 A JP2003045673 A JP 2003045673A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- layer
- emitting layer
- light emitting
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 11
- 230000005525 hole transport Effects 0.000 claims abstract description 8
- 238000005401 electroluminescence Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 abstract description 5
- 239000010931 gold Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 4
- 238000001552 radio frequency sputter deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- WMHSAFDEIXKKMV-UHFFFAOYSA-N oxoantimony;oxotin Chemical compound [Sn]=O.[Sb]=O WMHSAFDEIXKKMV-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- -1 tris (8-quinolinol) aluminum Chemical compound 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機エレクトロル
ミネッセンス素子（有機ＥＬ素子）に関する。TECHNICAL FIELD The present invention relates to an organic electroluminescence device (organic EL device).
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、エリアカラーの車載オ
ーディオ用表示パネルが実用化され、フルカラーを用い
た携帯端末機器やパーソナルコンピュータのディスプレ
イ等に用いられている。そして、有機ＥＬ素子は、電子
注入層と正孔注入層からそれぞれ電子と正孔を発光層に
注入させ、この電子と正孔とを発光中心で再結合させて
励起子を生成し、この励起子が励起状態から基底状態に
戻るときに蛍光を発光する。2. Description of the Related Art For organic EL devices, display panels for in-vehicle audio of area color have been put to practical use, and are used for displays of portable terminal devices and personal computers using full color. Then, the organic EL device injects electrons and holes into the light emitting layer from the electron injection layer and the hole injection layer, respectively, and recombines the electrons and holes at the emission center to generate excitons. When the child returns from the excited state to the ground state, it emits fluorescence.
【０００３】この有機ＥＬ素子において、５〜２０Ｖ程
度の低い電圧で駆動できるという利点があり、発光材料
となる蛍光物質を選択することによって適当な色彩に発
光させることができ、フルカラー表示装置としても利用
できる期待があり、様々な研究が行われるようになっ
た。This organic EL element has an advantage that it can be driven at a low voltage of about 5 to 20 V, and can emit light in an appropriate color by selecting a fluorescent substance as a light emitting material, and can also be used as a full color display device. There are expectations that they can be used, and various researches have started.
【０００４】図２は、従来の有機ＥＬ素子の１画素を示
す断面図である。有機ＥＬ素子は、各画素がマトリクス
状に配置され、この各画素は、図２に示すようにガラス
からなる透明基板８上に形成された陽極３と、ホール輸
送層４と、電子輸送性発光層５と、陰極６とが順次積層
された構成を有する。なお、マトリクスの交点の透明基
板８上には、駆動用素子７が形成されている。ここで、
陽極３は、透明導電性のインジウム−スズ酸化物（ＩＴ
Ｏ）からなり、ホール輸送層４は、アリールジアミンか
らなる。また、電子輸送性発光層５は、トリス（８−キ
ノリノール）アルミニウム有機錯体からなり、陰極６
は、Ａｌからなる。FIG. 2 is a sectional view showing one pixel of a conventional organic EL element. In the organic EL element, each pixel is arranged in a matrix, and each pixel has an anode 3, a hole transport layer 4, and an electron transport light emission formed on a transparent substrate 8 made of glass as shown in FIG. It has a structure in which the layer 5 and the cathode 6 are sequentially stacked. The driving element 7 is formed on the transparent substrate 8 at the intersection of the matrix. here,
The anode 3 is a transparent conductive indium-tin oxide (IT).
O) and the hole transport layer 4 is made of aryldiamine. The electron-transporting light-emitting layer 5 is composed of a tris (8-quinolinol) aluminum organic complex and has a cathode 6
Is made of Al.
【０００５】この有機ＥＬ素子は、マトリクス状に配置
された画素における陽極３と陰極６との間に電圧を印加
して、陽極３からホールを注入し、ホール輸送層４を経
て電子輸送性発光層５に輸送し、一方、陰極６から電子
を注入して、この電子輸送性発光層５の界面でホールと
電子とを結合させて発光させ、この発光した光を陽極３
を介して透明基板８側から外部に取り出すことによって
表示を行うものである。In this organic EL device, a voltage is applied between the anode 3 and the cathode 6 in pixels arranged in a matrix to inject holes from the anode 3, and the electron transporting light emission is performed via the hole transport layer 4. On the other hand, electrons are injected from the cathode 6 while being transported to the layer 5, and at the interface of the electron transporting light emitting layer 5, holes and electrons are combined to emit light, and the emitted light is emitted to the anode 3
The display is performed by taking it out from the transparent substrate 8 side through the.
【０００６】この場合、透明基板８側から発光した光を
取り出す限り、駆動用素子７の占める割合を小さくして
も、この駆動用素子７部分が発光した光を遮るため、発
光効率を低下させる。この対策として、陰極６側から発
光を取り出すことが考えられた。この際、陰極６とし
て、光透過性が良好で、電子注入効率の良好な材料が必
要とされるから、薄い金属膜とＩＴＯとを積層した構造
が用いられた。In this case, as long as the light emitted from the transparent substrate 8 side is taken out, even if the ratio occupied by the driving element 7 is reduced, this driving element 7 part blocks the emitted light, so that the luminous efficiency is lowered. . As a countermeasure against this, it has been considered to take out light emission from the cathode 6 side. At this time, since a material having good light transmittance and good electron injection efficiency is required for the cathode 6, a structure in which a thin metal film and ITO are laminated was used.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、ＩＴＯ
は、通常ＲＦスパッタ法により形成されるので、この際
に陰極６下層の電子輸送性発光層５にダメージが与えら
れ、発光効率が低下するといった不都合を生じていた。
また、ＩＴＯの比抵抗は、金属より高いため金属単独で
陰極を形成した場合よりも高くなり、発光開始電圧が高
くなってしまうといった問題を生じていた。However, the ITO is
Since it is usually formed by the RF sputtering method, the electron transporting light emitting layer 5 under the cathode 6 is damaged at this time, which causes a problem that the light emitting efficiency is lowered.
Further, since the specific resistance of ITO is higher than that of metal, it is higher than that of the case where the cathode is formed of metal alone, which causes a problem that the light emission start voltage is increased.
【０００８】そこで、本発明は、上記のような問題点を
解消するためになされたもので、発光を取り出す陰極
が、電子輸送性発光層にダメージを与えずに作製され、
かつ低い発光開始電圧を有する有機エレクトロルミネッ
センス素子を提供することを目的とする。Therefore, the present invention has been made to solve the above problems, and a cathode for taking out light emission is produced without damaging the electron transporting light emitting layer,
An object of the present invention is to provide an organic electroluminescence device having a low light emission starting voltage.
【０００９】[0009]
【課題を解決するための手段】本発明の第１の発明は、
少なくとも、基板上に陽極、ホール輸送層、電子輸送性
発光層、陰極を順次積層した有機エレクトロルミネッセ
ンス素子において、前記陰極は、真空蒸着法により形成
された金属層の上にＡｕを形成したものであることを特
徴とする有機エレクトロルミネッセンス素子を提供す
る。第２の発明は、前記金属層は、Ａｌ又はＭｇＡｇで
あることを特徴とする請求項１記載の有機エレクトロル
ミネッセンス素子を提供する。The first invention of the present invention is as follows:
At least an organic electroluminescent device in which an anode, a hole transporting layer, an electron transporting light emitting layer, and a cathode are sequentially laminated on a substrate, wherein the cathode is a metal layer formed by a vacuum deposition method and Au is formed on the metal layer. There is provided an organic electroluminescence device characterized by being present. A second invention provides the organic electroluminescence device according to claim 1, wherein the metal layer is Al or MgAg.
【００１０】[0010]
【発明の実施の形態】本発明の実施形態の有機エレクト
ロルミネッセンス素子について図１を参照しながら以下
に説明する。図１は、本発明の実施形態の有機エレクト
ロルミネッセンス素子の１画素を示す断面図である。従
来例と同一構成には同一符号を付し、その説明を省略す
る。BEST MODE FOR CARRYING OUT THE INVENTION An organic electroluminescence device according to an embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a cross-sectional view showing one pixel of the organic electroluminescence element of the embodiment of the present invention. The same components as those of the conventional example are designated by the same reference numerals, and the description thereof will be omitted.
【００１１】図１に示すように、本発明の実施形態の有
機エレクトロルミネッセンス素子は、表面に駆動素子７
が形成されたＳｉ基板１上に絶縁層２と、陽極３と、ホ
ール輸送層４と、電子輸送性発光層５と、陰極６とを順
次積層した構成を有する。そして、電子輸送性発光層５
から発光した光を陰極６側から取り出せるようにしたも
のである。As shown in FIG. 1, the organic electroluminescence device according to the embodiment of the present invention has a driving device 7 on the surface.
An insulating layer 2, an anode 3, a hole transporting layer 4, an electron transporting light emitting layer 5, and a cathode 6 are sequentially laminated on a Si substrate 1 on which is formed. And the electron transporting light emitting layer 5
The light emitted from is taken out from the cathode 6 side.
【００１２】絶縁層２は、ＳｉＯ2を用い、このＳｉＯ2
をＣＶＤ法により、厚さ４２０ｎｍ形成したものであ
り、陽極３は、ＩＴＯを用い、このＩＴＯをＲＦスパッ
タ法により、厚さ５０ｎｍ形成したものである。ホール
輸送層４は、α−ＮＰＤを用い、真空蒸着法により厚さ
５０ｎｍ形成したものであり、電子輸送性発光層５は、
Ａｌｑ３を用い、真空蒸着法により厚さ５０ｎｍ形成し
たものである。そして、陰極６は、Ａｌ又はＭｇＡｇ上
にＡｕを形成したものを用い、所定の厚さに形成したも
のである。[0012] The insulating layer 2, using the SiO 2, the SiO 2
Is formed by CVD to have a thickness of 420 nm, and the anode 3 is made of ITO, and this ITO is formed by RF sputtering to have a thickness of 50 nm. The hole transport layer 4 is formed by using α-NPD and has a thickness of 50 nm by a vacuum vapor deposition method, and the electron transport light emitting layer 5 is
A film having a thickness of 50 nm is formed using Alq3 by a vacuum evaporation method. The cathode 6 is formed to have a predetermined thickness by using Au formed on Al or MgAg.
【００１３】なお、電子輸送性発光層５から発光した光
を陰極６側から取り出す際に、Ｓｉ基板１側にも放射さ
れる光を反射させるためのＡｌ層或いはＡｌ合金層を絶
縁層２と陽極３との間に形成しても良い。また、発光効
率を向上させ、低電圧駆動を促進するために電子輸送性
発光層５と陰極６との間にＬｉＦを形成しても良い。When the light emitted from the electron transporting light emitting layer 5 is taken out from the cathode 6 side, an Al layer or an Al alloy layer for reflecting the light emitted also to the Si substrate 1 side is referred to as the insulating layer 2. It may be formed between the anode 3. Further, LiF may be formed between the electron transporting light emitting layer 5 and the cathode 6 in order to improve the light emitting efficiency and promote low voltage driving.
【００１４】ここで、本発明の実施形態における有機エ
レクトロルミネッセンス素子の陰極の材料を変えた複数
のサンプルを作製し、これらに所定の電流を流し、発光
開始電圧、透過率、発光効率について調べた。陰極６と
して、サンプル１は、真空蒸着法により、厚さ１０ｎｍ
のＡｌを形成し、続いて厚さ１０ｎｍのＡｕを形成した
有機ＥＬ素子、サンプル２は、真空蒸着方法により、厚
さ１０ｎｍのＭｇＡｇを形成し、続いて厚さ１０ｎｍの
Ａｕを形成した有機ＥＬ素子、比較サンプル１は、真空
蒸着方法により、厚さ２０ｎｍのＡｌを形成した有機Ｅ
Ｌ素子、比較サンプル２は、真空蒸着法により厚さ１０
ｎｍのＡｌを形成し、続いてＲＦスパッタ法により厚さ
１０ｎｍのＩＴＯを形成した有機ＥＬ素子である。その
結果を表１に示す。表１中には、比較サンプル２の陰極
材料の透過率は、測定せず、またその発光効率は、測定
できなかったので、比較サンプル２の結果は、載せてい
ない。Here, a plurality of samples in which the material of the cathode of the organic electroluminescence element in the embodiment of the present invention was changed were prepared, and a predetermined current was passed through these samples, and the light emission starting voltage, the transmittance, and the light emission efficiency were examined. . As the cathode 6, the sample 1 is 10 nm thick by the vacuum deposition method.
The organic EL element in which Al of 10 nm was formed, and then Au of 10 nm in thickness was formed, Sample 2 was formed by vacuum evaporation method to form MgAg of 10 nm in thickness, and subsequently, Au of 10 nm in thickness was formed. The element, Comparative Sample 1, is an organic E on which Al having a thickness of 20 nm is formed by a vacuum deposition method
The L element and the comparative sample 2 have a thickness of 10 by the vacuum evaporation method.
nm is formed, and subsequently, ITO having a thickness of 10 nm is formed by the RF sputtering method. The results are shown in Table 1. In Table 1, the transmittance of the cathode material of Comparative Sample 2 was not measured, and the luminous efficiency thereof could not be measured. Therefore, the results of Comparative Sample 2 are not shown.
【００１５】[0015]
【表１】 [Table 1]
【００１６】表１中の発光効率は、電流に対する発光輝
度の傾きから求めた値である。透過率は、各サンプルの
陰極材料だけに対して波長５３５ｎｍの光を照射した時
の値である。表１に示すように、サンプル１、２では、
発光開始電圧及び発光効率共に略等しく、良好な発光が
得られた。一方、比較サンプル１では、発光開始電圧
は、サンプル１、２よりも高く、発光効率は低く、暗か
った。また、比較サンプル２では、発光開始電圧は７Ｖ
程度に上昇してしまうものがあり、発光効率は測定でき
なかった。The luminous efficiency in Table 1 is a value obtained from the slope of the luminous brightness with respect to the current. The transmittance is a value when only the cathode material of each sample is irradiated with light having a wavelength of 535 nm. As shown in Table 1, in Samples 1 and 2,
The light emission starting voltage and the light emission efficiency were substantially the same, and good light emission was obtained. On the other hand, in Comparative sample 1, the light emission starting voltage was higher than in Samples 1 and 2, the light emitting efficiency was low, and it was dark. Further, in the comparative sample 2, the light emission starting voltage is 7V.
The emission efficiency could not be measured because some of them increased to some extent.
【００１７】比較サンプル１の発光開始電圧がサンプル
１、２よりも高いのは、ＩＴＯの比抵抗（１０-4Ω・ｃ
ｍ台）が、Ａｌの比抵抗（１０-6Ω・ｃｍ台）よりも高
く、陰極６に大部分の電圧が印加されてしまうので、Ａ
ｕ電子輸送性発光層５に印加される電圧が低下してしま
うためと、ＡｌがＡｕよりも透過率が低いので、光が透
過しないためと思われる。前記したように、比較サンプ
ル２の発光開始電圧は７Ｖ程度になってしまうのもがあ
ったが、これは、ＲＦスパッタによるダメージが電子輸
送性発光層５に残ることに加え、ＩＴＯの比抵抗はＡｕ
やＡｌに比較して高いため、有機ＥＬ素子に印加する電
圧を大きくする必要があるためであると考えられる。こ
うしたダメージを軽減するためにＲＦスパッタ内のター
ゲットとＳｉ基板との間の距離を長くしたり、電力を低
下させたりすることが考えられるが、このようにする
と、成膜レートが低下するので、生産には不向きとなっ
てしまう。The light emission starting voltage of the comparative sample 1 is higher than that of the samples 1 and 2 because the specific resistance of ITO (10 −4 Ω · c).
m) is higher than the specific resistance of Al (10 −6 Ω · cm), and most of the voltage is applied to the cathode 6, so
It is considered that this is because the voltage applied to the u electron transporting light emitting layer 5 is lowered, and because Al has a lower transmittance than Au, light is not transmitted. As described above, the light emission starting voltage of the comparative sample 2 was about 7 V in some cases. This is because the damage due to RF sputtering remains in the electron transporting light emitting layer 5, and the specific resistance of ITO is also increased. Is Au
It is considered that it is necessary to increase the voltage applied to the organic EL element because it is higher than that of Al and Al. In order to reduce such damage, it is conceivable to increase the distance between the target in the RF sputter and the Si substrate or reduce the power. However, in this case, the film forming rate decreases, It becomes unsuitable for production.
【００１８】ここで、Ａｕの透過率は、Ａｌ、ＭｇＡｇ
よりも高い。例えば、透過率４９％得られるＡｌの厚さ
は、１０ｎｍであるのに対して、Ａｕでは、厚さ２１ｎ
ｍである。即ち、同じ透過率を得るためには、Ａｕの厚
さを１とすると、Ａｌの厚さは、１／２にする必要があ
る。このことから、比較サンプル１の陰極材料は、厚さ
２０ｎｍのＡｌであるのに対して、サンプル１、２の陰
極材料は、厚さ１０ｎｍのＡｕを有しているため、サン
プル１、２の透過率は、比較サンプル１よりも高くなっ
ていると考えられる。Here, the transmittance of Au is Al, MgAg,
Higher than. For example, the thickness of Al for which a transmittance of 49% is obtained is 10 nm, whereas the thickness of Au is 21 n.
m. That is, in order to obtain the same transmittance, assuming that the thickness of Au is 1, the thickness of Al needs to be 1/2. From this, the cathode material of Comparative Sample 1 is Al with a thickness of 20 nm, whereas the cathode material of Samples 1 and 2 has Au of 10 nm thickness, and thus It is considered that the transmittance is higher than that of Comparative Sample 1.
【００１９】また、Ａｌ又はＭｇＡｇを真空蒸着法で形
成した後では、Ａｕは真空蒸着法以外の方法で形成して
も良い。これは、Ａｌ又はＭｇＡｇが電子輸送性発光層
５上に形成された後は、Ａｌ又はＭｇＡｇが電子輸送性
発光層５を保護するので、電子輸送性発光層５にダメー
ジを与えることがないからである。After forming Al or MgAg by the vacuum deposition method, Au may be formed by a method other than the vacuum deposition method. This is because after Al or MgAg is formed on the electron transporting light emitting layer 5, Al or MgAg protects the electron transporting light emitting layer 5, so that the electron transporting light emitting layer 5 is not damaged. Is.
【００２０】以上のように、本発明の実施形態によれ
ば、真空蒸着法により、Ａｌ又はＭｇＡｇを形成した
後、この上にＡｕを形成した陰極６を有機ＥＬ素子に用
いているので、電子輸送性発光層５へのダメージがな
く、発光開始電圧が低く、発光効率の高い有機ＥＬ素子
を得ることができる。As described above, according to the embodiment of the present invention, after the Al or MgAg is formed by the vacuum vapor deposition method, the cathode 6 having Au formed thereon is used for the organic EL element. It is possible to obtain an organic EL device having a low emission start voltage and a high light emission efficiency without damaging the transportable light emitting layer 5.
【００２１】本発明の実施形態に用いた陽極３の材料と
しては、ＩＴＯの代わりに酸化インジウムに酸化亜鉛が
含まれているＩＺＯ（Ｉ2Ｏ3にＺｎＯ2が１０ｗｔ％添
加されたもの）、二酸化スズ（ＳｎＯ2）、ニ酸化スズ
−アンチモン混合物（ＳｎＯ2＋Ｓｂ）、酸化インジウ
ム（Ｉｎ2Ｏ3）、酸化亜鉛−アルミニウム混合物（Ｚｎ
Ｏ＋Ａｌ）やこれらに微量の添加物を含んだもの、ニッ
ケル（Ｎｉ）、金（Ａｕ）、白金（Ｐｔ）等の金属、或
いはこれらに微量の添加物を含んだもの、又は混合物を
用いても良い。As the material of the anode 3 used in the embodiment of the present invention, IZO in which indium oxide contains zinc oxide instead of ITO (I 2 O 3 with 10 wt% ZnO 2 added), Tin dioxide (SnO 2 ), tin dioxide-antimony mixture (SnO 2 + Sb), indium oxide (In 2 O 3 ), zinc oxide-aluminum mixture (Zn)
O + Al) or those containing a trace amount of additives, metals such as nickel (Ni), gold (Au), platinum (Pt), or those containing a trace amount of additives, or a mixture thereof good.
【００２２】電子輸送性発光層５の材料としては、ペリ
レン誘導体、ビススチリル誘電体、ピラジン誘電体等を
用いても良い。ホール輸送層４の材料としては、ジアミ
ン誘電体、ベンジジン誘電体、スチルアミン誘電体、ト
リフェニルメタン誘電体やヒドラゾン誘電体等を用いて
も良い。As a material of the electron transporting light emitting layer 5, a perylene derivative, a bisstyryl dielectric, a pyrazine dielectric or the like may be used. As the material of the hole transport layer 4, a diamine dielectric, a benzidine dielectric, a stilamine dielectric, a triphenylmethane dielectric, a hydrazone dielectric, or the like may be used.
【００２３】[0023]
【発明の効果】本発明の有機エレクトロルミネッセンス
素子によれば、基板上に陽極、ホール輸送層、電子輸送
性発光層、陰極が順次積層された画素をマトリクス状に
配列してなり、この陰極が、真空蒸着法により形成され
た金属層の上にＡｕを形成したものであるので、電子輸
送性発光層へのダメージがなく、発光開始電圧が低く、
発光効率の高い有機ＥＬ素子を得ることができる。According to the organic electroluminescence device of the present invention, pixels in which an anode, a hole transporting layer, an electron transporting light emitting layer, and a cathode are sequentially laminated on a substrate are arranged in a matrix, and the cathode is Since Au is formed on the metal layer formed by the vacuum deposition method, there is no damage to the electron transporting light emitting layer, the light emission starting voltage is low,
An organic EL device having high luminous efficiency can be obtained.
【図１】本発明の実施形態の有機エレクトロルミネッセ
ンス素子を示す断面図である。FIG. 1 is a cross-sectional view showing an organic electroluminescent element according to an embodiment of the present invention.
【図２】従来の有機ＥＬ素子を示す断面図である。FIG. 2 is a sectional view showing a conventional organic EL element.
１…Ｓｉ基板、２…絶縁層、３…陽極、４…ホール輸送
層、５…電子輸送性発光層、６…陰極、７…駆動用素子DESCRIPTION OF SYMBOLS 1 ... Si substrate, 2 ... Insulating layer, 3 ... Anode, 4 ... Hole transport layer, 5 ... Electron transporting light emitting layer, 6 ... Cathode, 7 ... Driving element
Claims (2)
層、電子輸送性発光層、陰極を順次積層した有機エレク
トロルミネッセンス素子において、 前記陰極は、真空蒸着法により形成された金属層の上に
Ａｕを形成したものであることを特徴とする有機エレク
トロルミネッセンス素子。1. An organic electroluminescence device in which at least an anode, a hole transport layer, an electron transporting light emitting layer, and a cathode are sequentially laminated on a substrate, wherein the cathode is Au on a metal layer formed by a vacuum deposition method. An organic electroluminescence device characterized by being formed.
とを特徴とする請求項１記載の有機エレクトロルミネッ
センス素子。2. The organic electroluminescence device according to claim 1, wherein the metal layer is Al or MgAg.
Priority Applications (1)
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|---|---|---|---|
| JP2001225665A JP2003045673A (en) | 2001-07-26 | 2001-07-26 | Organic electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001225665A JP2003045673A (en) | 2001-07-26 | 2001-07-26 | Organic electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003045673A true JP2003045673A (en) | 2003-02-14 |
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|---|---|---|---|
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| JP (1) | JP2003045673A (en) |
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| JP2006344497A (en) * | 2005-06-09 | 2006-12-21 | Rohm Co Ltd | Organic el element, organic electroluminescent display device using this, and manufacturing method of organic el element |
| WO2009122876A1 (en) * | 2008-03-31 | 2009-10-08 | 住友化学株式会社 | Organic electroluminescence element and method for manufacturing the same |
| KR100981015B1 (en) * | 2004-03-25 | 2010-09-07 | 사천홍시현시기건유한공사 | Method for fabricating a organic electroluminescence device |
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| JPH05258860A (en) * | 1991-12-30 | 1993-10-08 | Eastman Kodak Co | Luminescent device |
| WO2002047457A2 (en) * | 2000-12-15 | 2002-06-20 | Universal Display Corporation | Highly stable and efficient oleds with a phosphorescent-doped mixed layer architecture |
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| JPH05258860A (en) * | 1991-12-30 | 1993-10-08 | Eastman Kodak Co | Luminescent device |
| WO2002047457A2 (en) * | 2000-12-15 | 2002-06-20 | Universal Display Corporation | Highly stable and efficient oleds with a phosphorescent-doped mixed layer architecture |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100981015B1 (en) * | 2004-03-25 | 2010-09-07 | 사천홍시현시기건유한공사 | Method for fabricating a organic electroluminescence device |
| JP2006344497A (en) * | 2005-06-09 | 2006-12-21 | Rohm Co Ltd | Organic el element, organic electroluminescent display device using this, and manufacturing method of organic el element |
| JP4699098B2 (en) * | 2005-06-09 | 2011-06-08 | ローム株式会社 | ORGANIC EL ELEMENT AND ORGANIC EL DISPLAY DEVICE USING THE SAME |
| US8018137B2 (en) | 2005-06-09 | 2011-09-13 | Rohm Co., Ltd. | Organic el element, organic el display device, and process for producing organic el element |
| WO2009122876A1 (en) * | 2008-03-31 | 2009-10-08 | 住友化学株式会社 | Organic electroluminescence element and method for manufacturing the same |
| JP2009245787A (en) * | 2008-03-31 | 2009-10-22 | Sumitomo Chemical Co Ltd | Organic electroluminescent element and manufacturing method of same |
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