JP2003015271A - Mask data generating method, mask manufacturing method and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mask data generating method for easily confirming whether an optical proximity effect correction pattern is automatically generated or not in the prescribed part of an arbitrary layer. SOLUTION: The method has a step (a) for setting a correction pattern generation area for automatically generating a correction pattern for correcting optical proximity effect to a pattern having the width of not more than a prescribed value, a step (b) for setting a correction pattern inhibition area for inhibiting the automatic generation of the correction pattern, a step (c) for inputting data on a correction confirming pattern having the width of not more than the prescribed value in the correction pattern generation area and the inhibition area, a step (d) for inputting data on the pattern for forming the layer of a semiconductor device and a step (e) for automatically generating the correction pattern.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of creating mask data used during exposure in the manufacture of semiconductor devices, and more particularly to an OPC (optical proxi).
(mity correction: optical proximity correction)
The present invention relates to a mask data creation method for generating a pattern.
Furthermore, the present invention relates to a mask manufacturing method that uses mask data created by such a mask data creating method, and a method of manufacturing a semiconductor device that uses a mask manufactured by such a mask manufacturing method.

[0002]

2. Description of the Related Art In recent years, miniaturization of patterns formed on semiconductor devices has progressed, and this tendency is particularly remarkable in memory cells such as SRAMs. However, if the pattern width is 0.18 μm or less, the influence of the optical proximity effect caused by the relationship with the wavelength of light cannot be ignored. This optical proximity effect will be described with reference to FIG.

When a fine pattern as shown in FIG. 4A is formed on a mask and a resist or the like applied on a wafer is exposed, a detailed shape is reproduced as shown in FIG. 4B. It cannot be done, and the pattern shape changes. Therefore,
In order to obtain a pattern as shown in FIG. 4A in a resist or the like, as shown in FIG. 4C, a pattern in which the optical proximity effect is corrected in advance is formed on a mask.

Since the influence of the optical proximity effect varies depending on whether or not another pattern is passed nearby, generally, the OPC pattern is automatically generated in the placement and routing program. On the other hand, in the case of a memory cell such as SRAM, the pattern is extremely fine, and therefore finer correction (for example, 0.005 μm unit)
In order to perform the above, it is also performed to manually input the OPC pattern. In that case, if the OPC pattern is automatically generated in the program, the correction is performed twice. Therefore, the generation frame or the prohibition frame of the OPC pattern can be set so as not to perform the correction in the program. There is.

FIG. 5 shows an OP in the placement and routing program.
An example of the generation frame and the prohibition frame of the C pattern is shown. The OPC pattern generation frame 1 is formed in the 110th layer, for example, and specifies an area in which an OPC pattern is automatically generated. On the other hand, OPC
The pattern prohibition frame 2 is formed in the 111th layer, for example.
Designate an area where automatic generation of PC patterns is prohibited. As a result, in another layer, the OPC pattern is generated in the area specified by the OPC pattern generation frame 1 and outside the area specified by the OPC pattern prohibition frame 2.

[0006]

However, when a certain layer is displayed on the display, in order to confirm whether or not the area is an area where the OPC pattern is automatically generated, the OPC pattern generation frame 1 It was necessary to refer to the 110th layer in which is stored and the 111th layer in which the OPC pattern prohibition frame 2 is stored. Further, in order to confirm whether or not the OPC pattern is correctly generated, it is necessary to refer to the coordinate data of the pattern. That is, it is necessary to search for a corresponding portion between a plurality of layers and to measure the space between the patterns in order to confirm the correction amount, which takes time and effort for confirmation.

In view of the above points, the present invention has an object of providing a mask data generating method capable of visually confirming whether or not an OPC pattern is automatically generated in a predetermined area of an arbitrary layer. And Furthermore, the present invention provides a mask manufacturing method using mask data created by such a mask data creating method, and a semiconductor device manufacturing method using a mask manufactured by such a mask manufacturing method. To aim.

[0008]

In order to solve the above problems, a mask data creating method according to the present invention is a method for creating data of a mask used for exposure in manufacturing a semiconductor device by using a computer. And (a) setting a correction pattern generation area for automatically generating a correction pattern for correcting the optical proximity effect based on a given condition for a pattern having a width equal to or less than a predetermined value, and Step (b) of setting a correction pattern prohibition region for prohibiting automatic generation of a pattern, data of a first correction confirmation pattern having a width equal to or smaller than a predetermined value in the correction pattern generation region, and in the correction pattern prohibition region Step (c) of inputting data of a second correction confirmation pattern having a width equal to or smaller than a predetermined value, and forming a layer of a semiconductor device. (D) of inputting data of a pattern to be read, and a step of automatically generating a correction pattern for a pattern having a width equal to or smaller than a predetermined value in a portion within the correction pattern generation area and outside the correction pattern prohibition area ( e) and.

According to the mask data creating method of the present invention, it is possible to easily check whether or not the OPC pattern is automatically generated properly by visually checking the correction confirmation pattern in a predetermined area of an arbitrary layer. You can check.

Here, step (c) has a width of a predetermined value or less in the correction pattern generation area, and a first plurality of correction confirmation patterns having a rough portion and a dense portion in the pattern interval. Inputting data and data of a second plurality of correction confirmation patterns having a width equal to or less than a predetermined value in the correction pattern prohibition region and having a rough portion and a dense portion in a pattern interval. Is also good. In that case, it is also possible to determine the difference in the shape of the correction pattern between the coarse pattern portion and the dense pattern portion.

Further, the mask manufacturing method according to the present invention comprises a step (f) of manufacturing a mask based on the mask data created by the above-described mask data creating method.

Further, a method of manufacturing a semiconductor device according to the present invention comprises a step of applying a resist on a semiconductor wafer having a predetermined film formed thereon, and a step of forming a pattern formed on a mask manufactured by the mask manufacturing method described above. The method comprises the steps of exposing a resist applied on a semiconductor wafer, developing the exposed resist, and patterning a film formed on the semiconductor wafer by using the developed resist.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an example of a pattern created by a mask data creating method according to an embodiment of the present invention. In FIG. 1, an OPC generation area in which an OPC pattern is automatically generated by a program for a pattern having a width equal to or less than a predetermined value and an OPC prohibition area in which the OPC pattern is not automatically generated are shown. These areas are set, for example, by the OPC pattern generation frame formed in the 110th layer and the OPC pattern prohibition frame formed in the 111th layer of the pattern data used in the placement and routing program. It cannot be recognized by looking at only the screen of the pattern shown in. Therefore, in the present invention, by forming an OPC confirmation pattern having a width of a predetermined value or less in both the OPC occurrence area and the OPC prohibition area, it is possible to visually confirm whether or not the OPC pattern is automatically generated. ing.

As shown in FIG. 1, a linear pattern 31 is formed between a solid pattern 41 and a solid pattern 51. Similarly, the solid pattern 42 and the solid pattern 52
A straight line pattern 32 is formed between and. The linear patterns 31 and 32 are a plurality of linear patterns provided in parallel to confirm the processing size, and have a rough portion and a dense portion.

In the OPC generation area, first OPC confirmation patterns 11 and 12 having a width of a predetermined value or less are formed, and in the OPC prohibited area, a second OPC having a width of a predetermined value or less. Confirmation patterns 21 and 2
2 is formed. O that should be generated by the program
Since the shape of the PC pattern changes depending on the pattern density of the surroundings, a rough portion and a dense portion are provided in the first and second OPC confirmation patterns, and the O based on the surrounding pattern density is used.
The difference in the shape of the PC pattern can be visually confirmed.

As shown in FIG. 4C, the OPC pattern has a special shape at the tip of the pattern. Therefore, by comparing the tip of the first OPC confirmation pattern 11 or 12 with the tip of the second OPC confirmation pattern 21 or 22 after the automatic generation of the OPC pattern, the OPC
It can be confirmed that an appropriate OPC pattern has been generated in the generation area, and that no OPC pattern has been generated in the OPC prohibited area.

FIG. 2 is a flowchart showing a mask data creating method according to an embodiment of the present invention. First, in step S1, an OPC occurrence area is set. O
The setting of the PC generation area can be performed by, for example, setting the O
This is done by inputting a PC pattern generation frame. on the other hand,
In step S2, the OPC prohibited area is set.
The setting of the OPC prohibited area is performed, for example, in the 111th layer of the pattern data used in the placement and routing program.
This is done by inputting the OPC pattern prohibition frame.

Next, in step S3, the first OP having a width equal to or smaller than a predetermined value in the OPC occurrence area.
The data of the C confirmation pattern and the data of the second OPC confirmation pattern having a width equal to or smaller than a predetermined value in the OPC prohibited area are input. Further, in step S4, data of a pattern forming an arbitrary layer of the semiconductor device is input. Examples of the layer of the semiconductor device include a gate electrode layer of a transistor, an insulating film layer, an impurity diffusion region layer, and a wiring layer layer.

Next, in step S5, an OPC pattern is automatically generated by the placement and routing program. OP
The C pattern is inside the OPC pattern generation frame,
And, it occurs in a portion outside the OPC pattern prohibition frame. The tip of the first OPC confirmation pattern and the second OPC
By comparing with the leading end of the confirmation pattern, it can be confirmed that an appropriate OPC pattern has been generated in the OPC occurrence area, or that no OPC pattern has been generated in the OPC prohibition area. Then, in step S6, the OPC pattern in the OPC prohibited area can be manually input.

When the creation of the mask data is completed in this way, the mask used for the exposure in the manufacture of the semiconductor device is manufactured based on this. The mask manufacturing method according to the present invention includes a step of manufacturing a mask based on the mask data created by the mask data creating method according to the present invention.

Further, a semiconductor device is manufactured using the mask manufactured by the mask manufacturing method according to the present invention. FIG. 3 is a flowchart showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. First, step S
In 11, a device isolation film is formed on a predetermined region of the semiconductor wafer. Next, in step S12, an insulating film serving as a gate insulating film is formed on the region of the semiconductor wafer surrounded by the element isolation film. Furthermore, step S13
In, a polycrystalline silicon film to be a gate electrode is formed on the insulating film.

Then, in step S14, a resist is applied on the semiconductor wafer on which the insulating film and the polycrystalline silicon film are formed. Next, in step S15, the resist formed on the semiconductor wafer is exposed with the pattern formed on the mask manufactured by the mask manufacturing method according to the present invention. Further, in step S16, the exposed resist is developed. In step S17, the gate insulating film and the gate electrode are patterned by etching the insulating film and the polycrystalline silicon film using the developed resist.

Then, in step S18, an impurity diffusion region is formed by implanting impurities into the semiconductor wafer while masking unnecessary regions with an insulating film or the like. Next, in step S19, an interlayer insulating film is formed on the semiconductor wafer. Further, the unnecessary area is masked and the interlayer insulating film is etched to form an opening in a predetermined portion of the interlayer insulating film. Next, in step S20, the wiring is patterned. When forming a multi-layer wiring, step S19 and step S20 may be repeated as many times as necessary.

Also in steps S18 to S20, as in steps S14 to S17, etching and the like are performed after the resist is applied, exposed and developed. A mask manufactured by the mask manufacturing method according to the present invention is also used in the step of exposing the resist.

[0025]

As described above, according to the present invention, by visually checking the correction confirmation pattern in a predetermined area of an arbitrary layer, it is possible to determine whether or not the OPC pattern is appropriately automatically generated. You can check easily.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a pattern created by a mask data creating method according to an embodiment of the present invention.

FIG. 2 is a flowchart showing a mask data creating method according to an embodiment of the present invention.

FIG. 3 is a flowchart showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a diagram for explaining an optical proximity effect.

FIG. 5 is a diagram showing an example of an OPC pattern generation frame and a prohibition frame in a placement and routing program.

[Explanation of symbols]

1 OPC pattern generation frame 2 OPC pattern prohibition frame 11, 12 First OPC confirmation pattern 21, 22 Second OPC confirmation pattern 31, 32 straight line pattern 41, 42, 51, 52 solid pattern

Claims (4)

[Claims] 1. A method of creating data of a mask used at the time of exposure in manufacturing a semiconductor device by using a computer, based on a given condition for a pattern having a width of a predetermined value or less. A step (a) of setting a correction pattern generation area for automatically generating a correction pattern for correcting the optical proximity effect; a step (b) of setting a correction pattern prohibition area for prohibiting the automatic generation of the correction pattern; Input the data of the first correction confirmation pattern having the width of the predetermined value or less in the pattern generation area and the data of the second correction confirmation pattern having the width of the predetermined value or less in the correction pattern prohibition area. A step (c) of inputting data of a pattern forming a layer of the semiconductor device, and a correction pattern In the correction pattern prohibition region outside part a generation region, the mask data creation method having a, and step (e) to automatically generate a correction pattern for a pattern having a predetermined value or less width. 2. The step (c) comprises a first plurality of correction confirmation patterns having a width equal to or less than the predetermined value in the correction pattern generation area and having a rough portion and a dense portion in a pattern interval. Inputting data and data of a second plurality of correction confirmation patterns having a width equal to or less than the predetermined value in the correction pattern prohibited area and having a rough portion and a dense portion in a pattern interval. The mask data creating method according to claim 1. 3. A method of manufacturing a mask used for exposure in manufacturing a semiconductor device, wherein the step of manufacturing the mask based on the mask data created by the mask data creating method according to claim 1 or 2. A method for manufacturing a mask, which comprises f). 4. A method of manufacturing a semiconductor device, comprising: applying a resist on a semiconductor wafer having a predetermined film formed thereon; and a pattern formed on a mask manufactured by the mask manufacturing method according to claim 3. Exposing the resist applied on the semiconductor wafer, developing the exposed resist, and patterning the film formed on the semiconductor wafer by using the developed resist. ,
A method for manufacturing a semiconductor device, comprising: