JP2003003044A - Semiconductor-sealing resin composition and semiconductor device - Google Patents

Semiconductor-sealing resin composition and semiconductor device

Info

Publication number
JP2003003044A
JP2003003044A JP2001192578A JP2001192578A JP2003003044A JP 2003003044 A JP2003003044 A JP 2003003044A JP 2001192578 A JP2001192578 A JP 2001192578A JP 2001192578 A JP2001192578 A JP 2001192578A JP 2003003044 A JP2003003044 A JP 2003003044A
Authority
JP
Japan
Prior art keywords
semiconductor
resin composition
epoxy resin
lead frame
nickel complex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001192578A
Other languages
Japanese (ja)
Other versions
JP3951639B2 (en
Inventor
Hironori Ikeda
Akito Sawai
博則 池田
章人 澤井
Original Assignee
Matsushita Electric Works Ltd
松下電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd, 松下電工株式会社 filed Critical Matsushita Electric Works Ltd
Priority to JP2001192578A priority Critical patent/JP3951639B2/en
Publication of JP2003003044A publication Critical patent/JP2003003044A/en
Application granted granted Critical
Publication of JP3951639B2 publication Critical patent/JP3951639B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor-sealing resin composition capable of improving adhesive properties by increasing adhesive strength to a lead frame. SOLUTION: The composition comprises an epoxy resin, a curing agent for the epoxy resin and a nickel complex.

Description

【発明の詳細な説明】Detailed Description of the Invention
【0001】[0001]
【発明の属する技術分野】本発明は、半導体を封止する
ための半導体封止用樹脂組成物及びこれを用いた半導体
装置に関するものであり、さらに詳しくは、熱伝導性に
優れた半導体装置などの電子部品の封止用のエポキシ樹
脂組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation for encapsulating a semiconductor and a semiconductor device using the same, and more specifically to a semiconductor device having excellent thermal conductivity. The present invention relates to an epoxy resin composition for encapsulating electronic components.
【0002】[0002]
【従来の技術】従来より、ダイオード、トランジスター
集積回路などの電気、電子部品や半導体装置などの封止
方法として、例えば、エポキシ樹脂やシリコーン樹脂な
どによる封止方法やガラス、金属、セラミックなどを用
いたハーメチックシール法が採用されてきているが、近
年では、信頼性の向上とともに大量生産やコストメリッ
トのあるエポキシ樹脂を用いた低圧トランスファー成形
による樹脂封止が主流を占めている。
2. Description of the Related Art Conventionally, as a sealing method for electric and electronic parts such as a diode and a transistor integrated circuit, a semiconductor device, etc., for example, a sealing method using epoxy resin or silicone resin, glass, metal, ceramic or the like has been used. The hermetic sealing method has been adopted, but in recent years, resin encapsulation by low-pressure transfer molding using an epoxy resin, which has improved reliability and mass production as well as cost advantages, has become mainstream.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、このよ
うなエポキシ樹脂による封止方法では、樹脂の金属に対
する接着力で封止されているため、リードフレームに用
いられている金属の種類によっては接着強度が弱い場合
があり、特に、パワーICやパワートランジスタといっ
たパワーデバイスの分野の半導体装置では、Niリード
フレームが多く用いられているが、従来から用いられて
いる樹脂のNiに対する接着強度は非常に弱く、樹脂と
リードフレーム間で剥離が生じ、耐電圧などの面で歩留
まりが落ちることが問題となっている。
However, in such a sealing method using an epoxy resin, since the sealing is performed by the adhesive force of the resin to the metal, the adhesive strength depends on the kind of the metal used in the lead frame. In some semiconductor devices in the field of power devices such as power ICs and power transistors, Ni lead frames are often used, but the adhesive strength of conventionally used resins to Ni is very weak. However, peeling occurs between the resin and the lead frame, resulting in a decrease in yield in terms of withstand voltage and the like.
【0004】本発明は上記の点に鑑みてなされたもので
あり、リードフレームとの接着強度を高めて密着性を向
上させることができる半導体封止用樹脂組成物及び半導
体装置を提供することを目的とするものである。
The present invention has been made in view of the above points, and it is an object of the present invention to provide a resin composition for semiconductor encapsulation and a semiconductor device capable of increasing the adhesive strength with a lead frame and improving the adhesion. It is intended.
【0005】[0005]
【課題を解決するための手段】本発明の請求項1に係る
半導体封止用樹脂組成物は、エポキシ樹脂とその硬化剤
及びニッケル錯体物を含有して成ることを特徴とするも
のである。
A resin composition for semiconductor encapsulation according to claim 1 of the present invention is characterized by containing an epoxy resin, a curing agent thereof, and a nickel complex.
【0006】また、本発明の請求項2に係る半導体封止
用樹脂組成物は、請求項1の構成に加えて、下記(1)
のニッケル錯体物を含有して成ることを特徴とするもの
である。
Further, the resin composition for semiconductor encapsulation according to claim 2 of the present invention has the following constitution (1) in addition to the constitution of claim 1.
The nickel complex compound of
【0007】[0007]
【化2】 [Chemical 2]
【0008】また、本発明の請求項3に係る半導体封止
用樹脂組成物は、請求項1又は2の構成に加えて、ニッ
ケル錯体物の含有率が0.05〜1.0質量%であるこ
とを特徴とするものである。
The resin composition for semiconductor encapsulation according to claim 3 of the present invention, in addition to the constitution of claim 1 or 2, has a nickel complex content of 0.05 to 1.0% by mass. It is characterized by being.
【0009】本発明の請求項4に係る半導体装置は、請
求項1乃至3のいずれかに記載の半導体封止用樹脂組成
物で半導体を封止して成ることを特徴とするものであ
る。
A semiconductor device according to a fourth aspect of the present invention is characterized in that a semiconductor is encapsulated with the resin composition for semiconductor encapsulation according to any one of the first to third aspects.
【0010】[0010]
【発明の実施の形態】以下、本発明の実施の形態を説明
する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.
【0011】エポキシ樹脂としては、従来から半導体装
置の封止成形に用いられているものを使用することがで
き、例えば、o−クレゾールノボラック型エポキシ樹
脂、ジシクロペンタジエン型エポキシ樹脂、ビスフェノ
ール型エポキシ樹脂、ブロム含有エポキシ樹脂、ナフタ
レン環を有するエポキシ樹脂などを挙げることができ
る。本発明ではこれらのエポキシ樹脂を単独で用いたり
複数併用したりすることができる。
As the epoxy resin, those conventionally used for sealing molding of semiconductor devices can be used. For example, o-cresol novolac type epoxy resin, dicyclopentadiene type epoxy resin, bisphenol type epoxy resin. , A bromine-containing epoxy resin, an epoxy resin having a naphthalene ring, and the like. In the present invention, these epoxy resins can be used alone or in combination.
【0012】エポキシ樹脂の硬化剤としては、従来から
半導体装置の封止成形に用いられているものを使用する
ことができ、例えば、フェノールアラルキル、フェノー
ルノボラック、クレゾールノボラック、テルペン系骨格
を有する硬化剤、ジシクロ骨格を有する硬化剤、ナフト
ールアラルキル等、各種の多価フェノール化合物あるい
はナフトール化合物を用いることができる。本発明では
これらの硬化剤を単独で用いたり複数併用したりするこ
とができる。
As the curing agent for the epoxy resin, those conventionally used for sealing and molding semiconductor devices can be used. For example, a curing agent having a phenol aralkyl, phenol novolac, cresol novolac, or terpene skeleton. It is possible to use various polyphenol compounds or naphthol compounds, such as a curing agent having a dicyclo skeleton, and naphthol aralkyl. In the present invention, these curing agents can be used alone or in combination.
【0013】ニッケル錯体物としては上記(1)の構造
式で示される[2,2'-thiobis(4-tert-octylphenolate)]-
2-ethylhexylamie nickel(II)を用いることができる。
The nickel complex compound is represented by the structural formula (1) above, [2,2'-thiobis (4-tert-octylphenolate)]-
2-ethylhexylamie nickel (II) can be used.
【0014】本発明では上記の成分の他に、必要に応じ
て、離型剤、カップリング剤、硬化助剤及び無機充填材
を配合することができる。離型剤としては、カルナバワ
ックス、ポリエチレンワックス、ステアリン酸、モンタ
ン酸、カルボキシル基含有ポリオレフィンなどを単独で
使用したり複数併用したりすることができる。カップリ
ング剤としては、γ−グリシドキシプロピルトリメトキ
シシラン、γ−メルカプトプロピルメトキシシランなど
を単独で使用したり複数併用したりすることができる。
硬化助剤としては、トリフェニルホスフィン等の有機ホ
スフィン類、ジアザビシクロウンデセン等の三級アミン
類、2−メチルイミダゾール等のイミダゾール類などを
単独で使用したり複数併用したりすることができる。無
機充填材としては、シリカ、アルミナ、窒化珪素などを
単独で使用したり複数併用したりすることができる。そ
の他に、難燃剤、着色剤、シリコーン可撓剤などを配合
することもできる。
In the present invention, in addition to the above-mentioned components, a release agent, a coupling agent, a curing aid and an inorganic filler can be blended if necessary. As the release agent, carnauba wax, polyethylene wax, stearic acid, montanic acid, carboxyl group-containing polyolefin or the like can be used alone or in combination. As the coupling agent, γ-glycidoxypropyltrimethoxysilane, γ-mercaptopropylmethoxysilane and the like can be used alone or in combination.
As the curing aid, organic phosphines such as triphenylphosphine, tertiary amines such as diazabicycloundecene, and imidazoles such as 2-methylimidazole can be used alone or in combination. . As the inorganic filler, silica, alumina, silicon nitride or the like can be used alone or in combination. In addition, a flame retardant, a colorant, a silicone flexible agent, etc. may be added.
【0015】本発明の半導体封止用樹脂組成物は、上記
のエポキシ樹脂、硬化剤、ニッケル錯体物、無機充填材
及びその他の成分を配合し、ミキサーやブレンダー等で
均一に混合した後、ニーダーやロールで加熱、混練し、
この後、冷却固化し、粉砕して粉粒状にして得ることが
できる。
The resin composition for semiconductor encapsulation of the present invention is blended with the above-mentioned epoxy resin, curing agent, nickel complex, inorganic filler and other components and uniformly mixed with a mixer, a blender or the like, and then a kneader. Or roll, heat and knead,
After that, it can be obtained by cooling and solidifying and crushing into powder.
【0016】エポキシ樹脂と硬化剤の配合割合は当量比
で、エポキシ樹脂/硬化剤=0.5〜1.5、好ましく
は、エポキシ樹脂/硬化剤=0.8〜1.2となるよう
に設定するのが好ましい。エポキシ樹脂と硬化剤の配合
割合がこの範囲を逸脱すると、硬化不足が生じて封止樹
脂(パッケージ)にクラックが発生する恐れがある。ま
た、ニッケル錯体物の配合量は本発明の半導体封止用樹
脂組成物の全量に対して0.05〜1.0質量%にする
のが好ましい。ニッケル錯体物の配合量が半導体封止用
樹脂組成物の全量に対して0.05質量%未満であれ
ば、リードフレームに対する本発明の半導体封止用樹脂
組成物の密着性を向上させることができなくなる恐れが
あり、ニッケル錯体物の配合量が半導体封止用樹脂組成
物の全量に対して1.0質量%を超えると、リードフレ
ームに対する密着性が若干低下する恐れがある。また、
無機充填材の配合量は本発明の半導体封止用樹脂組成物
の全量に対して60〜93質量%に設定することができ
る。その他の成分は必要に応じて適量配合することがで
きる。
The mixing ratio of the epoxy resin and the curing agent is an equivalence ratio such that epoxy resin / curing agent = 0.5 to 1.5, preferably epoxy resin / curing agent = 0.8 to 1.2. It is preferable to set. If the mixing ratio of the epoxy resin and the curing agent deviates from this range, insufficient curing may occur and cracks may occur in the sealing resin (package). Further, the compounding amount of the nickel complex is preferably 0.05 to 1.0 mass% with respect to the total amount of the resin composition for semiconductor encapsulation of the present invention. When the compounding amount of the nickel complex is less than 0.05% by mass with respect to the total amount of the semiconductor encapsulating resin composition, the adhesion of the semiconductor encapsulating resin composition of the present invention to the lead frame can be improved. If the amount of the nickel complex compounded exceeds 1.0 mass% with respect to the total amount of the resin composition for semiconductor encapsulation, the adhesion to the lead frame may be slightly reduced. Also,
The compounding amount of the inorganic filler can be set to 60 to 93 mass% with respect to the total amount of the resin composition for semiconductor encapsulation of the present invention. Other components can be blended in appropriate amounts as needed.
【0017】本発明の半導体装置は、リードフレーム等
に搭載された半導体(チップ)を上記の半導体封止用樹
脂組成物で封止することによって形成することができ
る。成形方法としてはトランスファー成形などを用いる
ことができる。また、成形条件は、例えば、温度が16
0〜200℃、注入スピード5〜30秒、注入圧力6.
9〜14.7MPa、キュアタイム60〜300秒に設
定することができるが、半導体封止用樹脂組成物の組成
や半導体装置の大きさ等に応じて適宜設定可能である。
The semiconductor device of the present invention can be formed by encapsulating a semiconductor (chip) mounted on a lead frame or the like with the above-mentioned semiconductor encapsulating resin composition. Transfer molding or the like can be used as the molding method. The molding conditions are, for example, that the temperature is 16
0-200 ° C, injection speed 5-30 seconds, injection pressure 6.
The curing time can be set to 9 to 14.7 MPa and the curing time to 60 to 300 seconds, but can be appropriately set depending on the composition of the resin composition for semiconductor encapsulation, the size of the semiconductor device, and the like.
【0018】そして、本発明ではニッケル錯体物を含有
するので、封止樹脂とリードフレームとの接着強度を高
めることができ、密着性を向上させることができるもの
である。これは、ニッケル錯体物中にニッケルに対して
配位結合しようとする手が余っているもしくは配位結合
していた手が外れて、リードフレームの表面のニッケル
と配位結合し直すために、密着性が向上すると考えられ
る。
Since the nickel complex is contained in the present invention, the adhesive strength between the encapsulating resin and the lead frame can be increased and the adhesion can be improved. This is because in the nickel complex, there are extra hands to coordinate with nickel, or the hands that had been coordinate-bonded are removed and the nickel on the surface of the lead frame is re-coordinated. It is considered that the adhesion is improved.
【0019】[0019]
【実施例】以下本発明を実施例によって具体的に説明す
る。
EXAMPLES The present invention will be specifically described below with reference to examples.
【0020】(実施例1〜4及び比較例)表1に示す配
合量で各成分を配合し、ブレンダーで30分間混合して
均一化した後、80℃に加熱したニーダーで混練溶融さ
せて押し出し、冷却した後、粉砕機で所定の粒度に粉砕
して粉粒状の半導体封止用樹脂組成物を得た。
(Examples 1 to 4 and Comparative Example) The respective components were blended in the blending amounts shown in Table 1, mixed for 30 minutes in a blender to homogenize them, and then kneaded and melted in a kneader heated to 80 ° C. and extruded. After cooling, it was pulverized with a pulverizer to a predetermined particle size to obtain a powdery semiconductor encapsulating resin composition.
【0021】この半導体封止用樹脂組成物を用いて接着
強度の測定を行った。接着強度の測定は、25×25×
05mmのNiめっき銅板からリードフレームを作成
し、リードフレームの表面に実施例1〜4及び比較例の
プリン型成形品を175℃で成形した後、せん断方向に
荷重をかけてプリン型成形品とリードフレームとが剥離
するまでの荷重を測定した。
The adhesive strength of the resin composition for semiconductor encapsulation was measured. The measurement of the adhesive strength is 25 × 25 ×
A lead frame was prepared from a 05 mm Ni-plated copper plate, and the pudding molds of Examples 1 to 4 and Comparative Example were molded at 175 ° C. on the surface of the lead frame, and then a load was applied in the shearing direction to obtain a pudding mold. The load until peeling from the lead frame was measured.
【0022】また、上記の半導体封止用樹脂組成物を用
いて実際の半導体装置における密着性の評価を行った。
この密着性の評価は、上記と同様のNiめっき銅板から
作成したリードフレームを用いてTOP−3D形の半導
体装置(パッケージ)をトランスファー成形にて形成
し、成形後の半導体装置の裏面の剥離による膨れを目視
で確認した。成形条件は175℃成形、注入時間10〜
15秒、注入圧力7MPa、キュア時間100秒とし
た。尚、この密着性の評価は10個のサンプルで行い、
裏面剥離の発生数/10個で表した。結果を表1に示
す。
Further, using the above-mentioned resin composition for semiconductor encapsulation, the adhesiveness in an actual semiconductor device was evaluated.
The adhesion is evaluated by forming a TOP-3D type semiconductor device (package) by transfer molding using a lead frame made of the same Ni-plated copper plate as described above, and peeling the back surface of the semiconductor device after molding. The swelling was visually confirmed. Molding conditions are 175 ° C molding, injection time 10-
The injection time was 15 seconds, the injection pressure was 7 MPa, and the curing time was 100 seconds. In addition, the evaluation of the adhesiveness was performed on 10 samples,
The number of occurrences of peeling on the back surface was expressed as / 10. The results are shown in Table 1.
【0023】[0023]
【表1】 [Table 1]
【0024】表1から明らかなように、実施例1〜4は
比較例よりも接着(密着)強度が高く、裏面の剥離も比
較例よりも実施例1〜4の方が少なくなった。特に、ニ
ッケル錯体物が0.05〜1.0質量%である実施例
2、3は裏面の剥離が全く発生せず、密着性が高いもの
であった。
As is clear from Table 1, Examples 1 to 4 had higher adhesion (adhesion) strength than Comparative Examples, and the peeling of the back surface was smaller in Examples 1 to 4 than in Comparative Examples. Particularly, in Examples 2 and 3 in which the nickel complex content was 0.05 to 1.0 mass%, peeling of the back surface did not occur at all, and the adhesion was high.
【0025】[0025]
【発明の効果】上記のように本発明の請求項1の発明
は、エポキシ樹脂とその硬化剤及びニッケル錯体物を含
有するので、この半導体封止用樹脂組成物で金属製のリ
ードフレームに搭載された半導体を封止することによっ
て、リードフレームと封止樹脂との接着強度を高めて密
着性を向上させることができるものである。
As described above, according to the invention of claim 1 of the present invention, since the epoxy resin, the curing agent thereof and the nickel complex are contained, the resin composition for semiconductor encapsulation is mounted on a metal lead frame. By sealing the formed semiconductor, the adhesive strength between the lead frame and the sealing resin can be increased and the adhesion can be improved.
【0026】また、本発明の請求項2の発明は、上記
(1)のニッケル錯体物を含有するので、この半導体封
止用樹脂組成物で金属製のリードフレームに搭載された
半導体を封止することによって、リードフレームと封止
樹脂との接着強度を高めて密着性を向上させることがで
きるものである。
Since the invention of claim 2 of the present invention contains the nickel complex of the above (1), the semiconductor mounted on the lead frame made of metal is sealed with this resin composition for semiconductor sealing. By doing so, the adhesive strength between the lead frame and the sealing resin can be increased and the adhesion can be improved.
【0027】また、本発明の請求項3の発明は、ニッケ
ル錯体物の含有率が0.05〜1.0質量%であるの
で、リードフレームと封止樹脂との接着強度を高めて密
着性を確実に向上させることができるものである。
Further, in the invention of claim 3 of the present invention, since the content of the nickel complex is 0.05 to 1.0% by mass, the adhesive strength between the lead frame and the sealing resin is increased to improve the adhesion. Can be surely improved.
【0028】本発明の請求項4の発明は、請求項1乃至
3のいずれかに記載の半導体封止用樹脂組成物で半導体
を封止するので、リードフレームと封止樹脂との接着強
度を高めて密着性を向上させることができるものであ
る。
According to a fourth aspect of the present invention, a semiconductor is encapsulated with the semiconductor encapsulating resin composition according to any one of the first to third aspects, so that the adhesive strength between the lead frame and the encapsulating resin is improved. The adhesiveness can be increased to improve the adhesion.
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4J002 CC042 CC052 CD021 CD051 CD061 CD121 CE002 EZ006 FD142 FD206 4M109 AA01 BA01 CA21 EA02 EB02 EB04 EB06 EB09 EB12 EB18 EC09 GA10    ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4J002 CC042 CC052 CD021 CD051                       CD061 CD121 CE002 EZ006                       FD142 FD206                 4M109 AA01 BA01 CA21 EA02 EB02                       EB04 EB06 EB09 EB12 EB18                       EC09 GA10

Claims (4)

    【特許請求の範囲】[Claims]
  1. 【請求項1】 エポキシ樹脂とその硬化剤及びニッケル
    錯体物を含有して成ることを特徴とする半導体封止用樹
    脂組成物。
    1. A resin composition for semiconductor encapsulation, comprising an epoxy resin, a curing agent thereof, and a nickel complex.
  2. 【請求項2】 下記(1)のニッケル錯体物を含有して
    成ることを特徴とする請求項1に記載の半導体封止用樹
    脂組成物。 【化1】
    2. The resin composition for semiconductor encapsulation according to claim 1, comprising the nickel complex of the following (1). [Chemical 1]
  3. 【請求項3】 ニッケル錯体物の含有率が0.05〜
    1.0質量%であることを特徴とする請求項1又は2に
    記載の半導体封止用樹脂組成物。
    3. The content of the nickel complex is 0.05 to.
    It is 1.0 mass%, The resin composition for semiconductor sealing of Claim 1 or 2 characterized by the above-mentioned.
  4. 【請求項4】 請求項1乃至3のいずれかに記載の半導
    体封止用樹脂組成物で半導体を封止して成ることを特徴
    とする半導体装置。
    4. A semiconductor device obtained by encapsulating a semiconductor with the resin composition for encapsulating a semiconductor according to claim 1.
JP2001192578A 2001-06-26 2001-06-26 Semiconductor sealing resin composition and semiconductor device Expired - Fee Related JP3951639B2 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153022A (en) * 1981-03-18 1982-09-21 Toshiba Corp Resin-sealed semiconductor device
JPS57153454A (en) * 1981-03-18 1982-09-22 Toshiba Corp Resin molded type semiconductor device
JPH03281539A (en) * 1989-03-31 1991-12-12 Toshiba Corp Organometallic resin composition, organometallic polymer, epoxy resin composition and resin-sealing type semiconductor device
JPH09328668A (en) * 1996-06-10 1997-12-22 Sekisui Chem Co Ltd Cold-curable resin composition, cold-curing type adhesive, reactive hot-melt type adhesive and cold-curing type tacky agent
JPH1017645A (en) * 1996-07-04 1998-01-20 Toray Ind Inc Epoxy resin composition and semiconductor device
JP2001185661A (en) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Sealing epoxy resin molding material and electronic component device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153022A (en) * 1981-03-18 1982-09-21 Toshiba Corp Resin-sealed semiconductor device
JPS57153454A (en) * 1981-03-18 1982-09-22 Toshiba Corp Resin molded type semiconductor device
JPH03281539A (en) * 1989-03-31 1991-12-12 Toshiba Corp Organometallic resin composition, organometallic polymer, epoxy resin composition and resin-sealing type semiconductor device
JPH09328668A (en) * 1996-06-10 1997-12-22 Sekisui Chem Co Ltd Cold-curable resin composition, cold-curing type adhesive, reactive hot-melt type adhesive and cold-curing type tacky agent
JPH1017645A (en) * 1996-07-04 1998-01-20 Toray Ind Inc Epoxy resin composition and semiconductor device
JP2001185661A (en) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Sealing epoxy resin molding material and electronic component device

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