JP2002323694A - Substrate bonding method and bonding device - Google Patents

Substrate bonding method and bonding device

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Publication number
JP2002323694A
JP2002323694A JP2001125764A JP2001125764A JP2002323694A JP 2002323694 A JP2002323694 A JP 2002323694A JP 2001125764 A JP2001125764 A JP 2001125764A JP 2001125764 A JP2001125764 A JP 2001125764A JP 2002323694 A JP2002323694 A JP 2002323694A
Authority
JP
Japan
Prior art keywords
substrate
pressure
substrates
pressing
suction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001125764A
Other languages
Japanese (ja)
Other versions
JP3487833B2 (en
Inventor
Satoshi Hachiman
聡 八幡
Kiyoshi Imaizumi
潔 今泉
Masayuki Saito
正行 齊藤
Yukinori Nakayama
幸徳 中山
Takao Murayama
孝夫 村山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Industries Co Ltd filed Critical Hitachi Industries Co Ltd
Priority to JP2001125764A priority Critical patent/JP3487833B2/en
Priority to SG200201048-6A priority patent/SG139511A1/en
Priority to TW91103319A priority patent/TW574575B/en
Priority to KR10-2002-0010530A priority patent/KR100489855B1/en
Publication of JP2002323694A publication Critical patent/JP2002323694A/en
Application granted granted Critical
Publication of JP3487833B2 publication Critical patent/JP3487833B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a substrate laminating method and a laminating device by which two substrates can be accurately and reliably laminate together in a short time, even in a large substrate. SOLUTION: When two substrates are laminated together with mechanical pressurizing force in a vacuum chamber, pressurization mechanisms which pressurize the vicinities of four corner parts of the square substrates are respectively provided, the gap between the substrates is observed after pressurizing the vicinities with the predetermined pressurizing force, and the vicinities are pressurized after adjusting the pressurizing force of each pressurization mechanism based on the observation. Thus, the laminating device which can make the gap between the substrates after lamination almost uniform is realized.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、真空中で液晶表示
パネル等を貼り合わせる基板貼り合わせ方法及び貼り合
わせ装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for bonding substrates such as liquid crystal display panels in a vacuum.

【0002】[0002]

【従来の技術】液晶パネルの製造工程には、透明電極や
薄膜トランジスタアレイなどを設けた2枚のガラス基板
の間に液晶を封入するための空間を形成するために、こ
れら基板間の距離が2μm程度となるように接着剤(以
下、シール剤という)で貼り合わせる工程がある。
2. Description of the Related Art In a manufacturing process of a liquid crystal panel, a distance between two glass substrates provided with a transparent electrode, a thin film transistor array and the like is set to 2 μm in order to form a space for sealing liquid crystal between the two substrates. There is a step of bonding with an adhesive (hereinafter, referred to as a sealing agent) to a degree.

【0003】例えば、特開2001−51284号公報
には、下基板と上基板との接合位置の位置合わせを行う
際に両基板に加圧力を掛け、下基板上面の接着剤に上基
板下面を接触させる第1加圧機構と、上基板を接着剤に
より下基板に貼り合わせ、所定の間隔になるまで、第1
加圧機構とは異なる加圧力を掛ける第2加圧機構とを備
え、第1加圧機構と第2加圧機構とがそれぞれ別のタイ
ミングで動作して加圧する構成を有する貼り合わせ装置
が開示されている。
For example, Japanese Patent Application Laid-Open No. 2001-512284 discloses that when a bonding position between a lower substrate and an upper substrate is adjusted, a pressure is applied to both substrates, and the lower surface of the upper substrate is applied to an adhesive on the upper surface of the lower substrate. The first pressure mechanism to be brought into contact with the upper substrate is bonded to the lower substrate with an adhesive, and the first substrate is pressed until a predetermined interval is reached.
A bonding apparatus including a second pressing mechanism for applying a pressing force different from the pressing mechanism, and having a configuration in which the first pressing mechanism and the second pressing mechanism operate at different timings to press each other is disclosed. Have been.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、貼り合
わせる基板が大きい場合、上記従来の加圧機構により基
板全体に均一な加圧力を掛けることは難しく、基板の各
端部の加圧状態を見ながら、それぞれの加圧力を調節し
て貼り合わせを行う必要があった。
However, when the substrate to be bonded is large, it is difficult to apply a uniform pressing force to the entire substrate by the above-mentioned conventional pressing mechanism, and it is necessary to observe the pressing state of each end of the substrate while observing the pressing state. In this case, it is necessary to adjust the respective pressures and perform the bonding.

【0005】本発明の目的は、大きな基板においても、
精度良く、確実に、しかも短時間で2枚の基板を貼り合
わせる基板貼り合わせ方法及び貼り合わせ装置を提供す
ることである。
[0005] The object of the present invention is to provide a large substrate.
An object of the present invention is to provide a substrate bonding method and a bonding apparatus for bonding two substrates accurately, reliably, and in a short time.

【0006】[0006]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明は、真空チャンバ内において、加圧力を加
える加圧機構を基板中央部付近を加圧する加圧機構と、
略四角形の基板の4つの角部近傍をそれぞれ加圧する加
圧機構を設け、中央部を加圧する加圧機構及び又は4つ
の角部をそれぞれ加圧する加圧機構を用いて所定の加圧
力で加圧した後に、基板間の間隔あるいは接着剤の潰れ
状態を観測し、観測結果に応じて、4つの角部をそれぞ
れ加圧する加圧機構を個別に制御して、基板間隔が均等
になるように貼り合わせを行うようにしたものである。
In order to achieve the above object, the present invention provides a pressurizing mechanism for applying a pressurizing force in a vacuum chamber, a pressurizing mechanism for pressurizing near a central portion of a substrate,
A pressurizing mechanism is provided for pressurizing the vicinity of the four corners of the substantially square substrate, and a pressurizing mechanism for pressurizing the central part and / or a pressurizing mechanism for pressing the four corners is applied at a predetermined pressing force. After pressing, observe the distance between the substrates or the state of the adhesive being crushed, and individually control the pressing mechanisms that press each of the four corners according to the observation results, so that the substrate intervals become even. The lamination is performed.

【0007】[0007]

【発明の実施の形態】以下、本発明の基板貼り合わせ装
置の一実施形態を図1及び図2を参照して詳細に説明す
る。図1は本発明の基板貼り合わせ装置の構成を示す概
略側面図であり、図2は図1に示した基板貼り合わせ装
置の上面図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the substrate bonding apparatus according to the present invention will be described below in detail with reference to FIGS. FIG. 1 is a schematic side view showing the configuration of the substrate bonding apparatus of the present invention, and FIG. 2 is a top view of the substrate bonding apparatus shown in FIG.

【0008】<本発明の基板貼り合わせ装置の構成>本
発明の基板貼り合わせ装置は、図1に示す如く、ステー
ジ部S1と、基板貼り合わせ部S2と、加圧機構を有す
るZ軸方向移動ステージ部S3とから構成されている。
架台1上には、基板貼り合わせ部S2を支持するフレー
ム2と、Z軸方向移動ステージ部S3を支持するフレー
ム3とがあり、架台1の上面にステージ部S1が備えら
れている。また、前記各部や加圧機構等を制御する制御
部(図示せず)が、本実施形態の基板貼り合わせ装置に
は備えられている。
<Structure of Substrate Bonding Apparatus of the Present Invention> As shown in FIG. 1, the substrate bonding apparatus of the present invention moves in the Z-axis direction having a stage S1, a substrate bonding section S2, and a pressing mechanism. And a stage section S3.
On the gantry 1, there are a frame 2 that supports the substrate bonding section S2 and a frame 3 that supports the Z-axis direction moving stage section S3. The stage section S1 is provided on the upper surface of the gantry 1. In addition, a control unit (not shown) for controlling the above-described units, the pressing mechanism, and the like is provided in the substrate bonding apparatus of the present embodiment.

【0009】ステージ部S1には、駆動モータ5を具備
するXステージ4aが設けられており、この駆動モータ
5によって、Xステージ4a上に設けられているYステ
ージ4bを、図1のX軸方向に移動できるようにしてい
る。また、Yステージ4bは駆動モータ6を具備してお
り、この駆動モータ6によって、Yステージ4b上のθ
ステージ4cを、図1のX軸及びZ軸と直交するY軸方
向に移動できるようにしている。更に、駆動モータ8を
具備するθステージ4c上には、支持柱10を支持する
支持体10aが設けられており、前記駆動モータ8によ
って、支持体10aが、回転ベアリング7を介してYス
テージ4bに対し回転できるように構成されている。
The stage section S1 is provided with an X stage 4a having a drive motor 5, and the drive motor 5 causes the Y stage 4b provided on the X stage 4a to move in the X-axis direction in FIG. To be able to move to. Further, the Y stage 4b has a drive motor 6, and the drive motor 6 allows the .theta.
The stage 4c can be moved in the Y axis direction orthogonal to the X axis and the Z axis in FIG. Further, a support 10a for supporting the support column 10 is provided on the θ stage 4c provided with the drive motor 8, and the support 10a is moved by the drive motor 8 via the rotary bearing 7 to the Y stage 4b. It is configured to be rotatable with respect to.

【0010】前記支持柱10の上端には、下基板を搭載
するテーブル9が設けられている。また、アーム11を
介して真空ベローズ12の下端がθステージ4cに固定
されている。更に、支持柱10の良好な回転と気密性と
を保証するために、アーム11によって回転ベアリング
13とシール14とが支持柱10に対し固定されてお
り、支持柱10が回転する際に、アーム11と真空ベロ
ーズ12とが支持柱10と共に回転しないように構成さ
れている。
At the upper end of the support column 10, a table 9 for mounting a lower substrate is provided. The lower end of the vacuum bellows 12 is fixed to the θ stage 4c via the arm 11. Further, in order to ensure good rotation and airtightness of the support column 10, the rotating bearing 13 and the seal 14 are fixed to the support column 10 by the arm 11, and when the support column 10 rotates, the arm 11 and the vacuum bellows 12 are configured so as not to rotate together with the support column 10.

【0011】また基板貼り合わせ部S2は、チャンバ1
5と、そのチャンバ15の内部に配置されたテーブル9
及び加圧板16と、後述のようにチャンバ15内減圧時
に加圧板16から外れた上基板34を保持するための基
板保持爪40と、チャンバ15の出入口部に設けられた
ゲートバルブ17とから構成されている。前記テーブル
9は、上述の如く支持柱10を介してステージ部S1上
に固定されている。
The substrate bonding section S2 is provided in the chamber 1
5 and a table 9 arranged inside the chamber 15
And a pressure plate 16, a substrate holding claw 40 for holding the upper substrate 34 that has come off from the pressure plate 16 when the pressure in the chamber 15 is reduced as described later, and a gate valve 17 provided at the entrance and exit of the chamber 15. Have been. The table 9 is fixed on the stage S1 via the support pillar 10 as described above.

【0012】また、前記加圧板16は複数の支持柱27
を介してZ軸方向移動ステージ部S3の中央ガイド板2
9に固定されている。更に、各支持柱27の周囲は、一
端がチャンバ15に、他端が中央ガイド板29に固定さ
れたベローズ28によって囲まれており、基板貼り合わ
せ時におけるチャンバ15内の減圧状態を保持できるよ
うに構成されている。尚、本実施形態では、加圧板16
が5本の支持柱27を介して中央ガイド板29に固定さ
れている。
The pressure plate 16 is provided with a plurality of support columns 27.
Through the central guide plate 2 of the Z-axis direction moving stage section S3
9 is fixed. Further, the periphery of each support column 27 is surrounded by a chamber 15 at one end and a bellows 28 fixed at the other end to a central guide plate 29, so that a reduced pressure state in the chamber 15 at the time of bonding the substrates can be maintained. Is configured. In the present embodiment, the pressing plate 16
Are fixed to the central guide plate 29 via five support columns 27.

【0013】チャンバ15内の下部には、チャンバ15
内を減圧排気するための配管20a、20bが設けられ
ている。この配管20a、20bは図示していない切換
バルブを介して真空ポンプに接続されている。尚、基板
の貼り合わせを行う際のチャンバ15内の圧力は5×1
−3Torr程度である。
The lower part of the chamber 15 includes a chamber 15
Pipes 20a and 20b for evacuating the inside are provided. The pipes 20a and 20b are connected to a vacuum pump via a switching valve (not shown). The pressure in the chamber 15 when bonding the substrates is 5 × 1
0 is about -3 Torr.

【0014】更に、チャンバ15内の上部には、貼合わ
せる基板の位置合わせマークを観測するため、大気を遮
断した複数の窓25が設けられている。これらの窓25
から図示していない加圧板16に設けられているマーク
認識用穴を介して、認識用カメラ26により、上下基板
の位置合わせ用マークのずれを測定するように構成され
ている。
Further, a plurality of windows 25 are provided in the upper part of the chamber 15 to shield the atmosphere for observing the alignment marks of the substrates to be bonded. These windows 25
, Through a mark recognition hole provided in the pressing plate 16 (not shown), the recognition camera 26 is configured to measure the displacement of the alignment marks on the upper and lower substrates.

【0015】テーブル9には、基板を吸着するための静
電吸着電極から成る静電吸着機構と複数の吸引吸着孔か
ら成る吸引吸着機構が設けられている。各吸着孔は配管
18を介してチャンバ15の外部に設置した、図示して
いない吸着バルブを経由して真空ポンプに接続されてい
る。また、配管18の途中には真空破壊用のバルブを介
して大気中に開放するためのバイパス配管が設けられて
いる。この真空破壊用バルブを開放することで、吸着状
態を強制的に解除することも可能にしている。
The table 9 is provided with an electrostatic attraction mechanism comprising an electrostatic attraction electrode for attracting a substrate and a suction attraction mechanism comprising a plurality of suction attraction holes. Each suction hole is connected to a vacuum pump via a suction valve (not shown) installed outside the chamber 15 via a pipe 18. A bypass pipe is provided in the middle of the pipe 18 for opening to the atmosphere via a valve for vacuum breaking. By opening the vacuum breaking valve, the suction state can be forcibly released.

【0016】またテーブル9には、下基板33を図示し
ない移載機より受け取ってテーブル9上に載せるため、
もしくは貼り合わせ後の基板(以下、貼り合わせ後の基
板をセルと呼ぶ)を取り出すための複数の昇降ピン35
が設けられている。この昇降ピン35はテーブル9に設
けた穴の中をZ軸方向に移動でき、この移動はシリンダ
36によって行われる。
The table 9 receives the lower substrate 33 from a transfer machine (not shown) and places it on the table 9.
Alternatively, a plurality of lifting pins 35 for taking out the bonded substrate (hereinafter, the bonded substrate is referred to as a cell).
Is provided. The lifting pin 35 can move in the Z-axis direction through a hole provided in the table 9, and this movement is performed by a cylinder 36.

【0017】一方、加圧板16にはテーブル9と同様に
静電吸着電極から成る静電吸着機構と、複数の減圧する
ための吸着孔から成る吸引吸着機構とが設けられてい
る。各吸引吸着孔は配管19を介して、真空チャンバ1
5の外部に設けた図示していない吸着バルブを経由して
真空ポンプに接続されている。
On the other hand, the pressing plate 16 is provided with an electrostatic attraction mechanism comprising an electrostatic attraction electrode, similarly to the table 9, and a suction attraction mechanism comprising a plurality of suction holes for reducing pressure. Each suction suction hole is connected to the vacuum chamber 1 via a pipe 19.
5 is connected to a vacuum pump via a suction valve (not shown) provided outside.

【0018】ここで本実施形態では、中央ガイド板29
の上方に、中央ガイド板29より上方に張出して(支持
柱27より上方に)4つの加圧機構41〜44が設けら
れており、また面の略中央部には、1つの加圧機構45
が設けられている。更に、中央ガイド板29には、フレ
ーム3に対して上下方向に移動可能なリニアガイドが取
付けられている。また各加圧機構41〜45の駆動部
は、フレーム3に設けられた固定支持部材46a、46
b、46c、46d、47に固定されている。
In this embodiment, the center guide plate 29
Are provided above the center guide plate 29 (above the support pillar 27), and four pressing mechanisms 41 to 44 are provided.
Is provided. Further, a linear guide that can move in the vertical direction with respect to the frame 3 is attached to the center guide plate 29. The driving units of the pressure mechanisms 41 to 45 are fixed supporting members 46 a and 46 provided on the frame 3.
b, 46c, 46d, 47.

【0019】この加圧機構の駆動部は、エンコーダ付き
のモータ41a、42a、43a、44a,45aとボ
ールネジ41b、42b、43b、44b、45bから
成り、さらに、各ボールネジ部の中央ガイド板29に対
する力の作用点部分にロードセル41c、42c、43
c、44c、45cが設けられている。
The drive unit of this pressurizing mechanism is composed of motors 41a, 42a, 43a, 44a, 45a with encoders and ball screws 41b, 42b, 43b, 44b, 45b. Load cells 41c, 42c, 43
c, 44c and 45c are provided.

【0020】また、中央ガイド板29、又は、中央ガイ
ド板29に力を作用させるための補助部材48には、Z
軸方向に移動させるためのリニアガイド30が設けられ
ている。このリニアガイド30はフレーム3に設けられ
たレールに沿って移動可能に構成されている。各加圧機
構を動作させ、この中央ガイド板29を下方に移動させ
ることにより、支持柱27に固定されている加圧板16
が下方向に押し下げられ、加圧板16に吸着されている
上基板34が下基板33に押付けられ加圧される構成と
なっている。
The center guide plate 29 or an auxiliary member 48 for applying a force to the center guide plate 29 includes Z
A linear guide 30 for moving in the axial direction is provided. The linear guide 30 is configured to be movable along a rail provided on the frame 3. By operating each pressing mechanism and moving the central guide plate 29 downward, the pressing plate 16 fixed to the support column 27 is moved.
Is pressed down, and the upper substrate 34 adsorbed on the pressure plate 16 is pressed against the lower substrate 33 to be pressed.

【0021】尚、本実施形態では5つの加圧機構が設け
られた構成としているが、四角の基板の4隅近傍に力を
均等に作用させる構成、すなわち4つの加圧機構が設け
られてもよい。更に、本実施形態では、中央ガイド板2
9を介して加圧板16に力を作用させる構成としている
が、加圧機構を直接加圧板16に力が作用するように構
成してもよい。
In this embodiment, five pressure mechanisms are provided. However, even if four force mechanisms are provided in the vicinity of four corners of a square substrate, force is applied evenly. Good. Further, in the present embodiment, the central guide plate 2
Although the pressure is applied to the pressure plate 16 via the pressure plate 9, the pressure mechanism may be configured to directly apply the force to the pressure plate 16.

【0022】次に、上述の如く構成された基板貼り合わ
せ装置により液晶パネル用基板を貼り合わせる動作につ
いて説明する。
Next, the operation of bonding the substrates for liquid crystal panels by the substrate bonding apparatus configured as described above will be described.

【0023】液晶パネル用基板を貼り合わせる際には、
基板貼り合わせに用いる上基板34あるいは下基板33
の一方に枠を形成するように、予め一筆書きで接着剤を
塗布しておく。図6にその枠の形成例を示す。更に、接
着剤が塗布された基板を下基板とし、接着剤の枠内に液
晶を所定量滴下しておく。ここで、液晶滴下前、あるい
は液晶滴下後の基板貼り合わせ前に、下基板又は上基板
には基板間隔を規定するためのスペーサが分散配置され
る。尚、このスペーサは液晶に混入してあってもよい。
また本実施形態では、接着剤の塗布を下基板33とした
が、接着剤の塗布は上基板34でもよいが、この場合、
下基板側の液晶滴下領域は、上基板に設けた接着剤で囲
まれる領域内とする必要がある。
When bonding a liquid crystal panel substrate,
Upper substrate 34 or lower substrate 33 used for substrate bonding
The adhesive is applied in advance with a single stroke so as to form a frame on one side. FIG. 6 shows an example of forming the frame. Further, a predetermined amount of liquid crystal is dropped in a frame of the adhesive with the substrate coated with the adhesive as a lower substrate. Here, before the liquid crystal is dropped or before the substrates are bonded after the liquid crystal is dropped, spacers for defining a substrate interval are dispersedly arranged on the lower substrate or the upper substrate. This spacer may be mixed in the liquid crystal.
In the present embodiment, the application of the adhesive is performed on the lower substrate 33. However, the application of the adhesive may be performed on the upper substrate 34. In this case,
The liquid crystal dropping region on the lower substrate side needs to be in a region surrounded by the adhesive provided on the upper substrate.

【0024】上記の如く一方の基板に接着剤を塗布した
後に、基板貼り合わせ装置によって貼り合わせ動作が行
われる。以下、その貼り合わせ工程について述べる。
After the adhesive is applied to one of the substrates as described above, a bonding operation is performed by a substrate bonding apparatus. Hereinafter, the bonding step will be described.

【0025】まず、チャンバ15の外部に設置されてい
る図示しない移載機上に、上基板34の膜面が下側にな
るように載せ、その上基板34の周縁部を下側からハン
ドに吸引吸着する。次に、チャンバ15の入口のゲート
バルブ17を開け、移載機のハンドをチャンバ内に挿入
した後に、加圧板16を上基板34に押し当て、加圧板
16に設けた吸引吸着機構の吸引吸着孔を用いて上基板
34を真空吸引により吸い上げることにより、加圧板1
6に上基板34を吸着する。このように基板34を加圧
板16に吸着した後、移載機のハンドにおける上基板3
4の吸引吸着を中止し、その後このハンドはチャンバ1
5外に退避する。尚、本実施形態では、移載機のハンド
が吸引吸着機能を有するものであるとして説明したが、
移載機は単に爪機構により上基板を把持してチャンバ内
に挿入する構成としてもよい。
First, the upper substrate 34 is placed on a transfer machine (not shown) installed outside the chamber 15 so that the film surface of the upper substrate 34 faces downward. Adsorb by suction. Next, after opening the gate valve 17 at the entrance of the chamber 15 and inserting the hand of the transfer machine into the chamber, the pressure plate 16 is pressed against the upper substrate 34, and the suction and suction mechanism of the pressure plate 16 By using the holes to suck up the upper substrate 34 by vacuum suction, the pressure plate 1
6, the upper substrate 34 is sucked. After the substrate 34 is thus attracted to the pressure plate 16, the upper substrate 3
4 was stopped, and then the hand
5. Evacuate outside. In the present embodiment, the hand of the transfer machine has been described as having a suction suction function.
The transfer machine may be configured to simply hold the upper substrate by the claw mechanism and insert the upper substrate into the chamber.

【0026】次に、チャンバ15内のテーブル9に設け
られている昇降ピン35の先端を、テーブル9の上面よ
り突出するように上昇させておくと共に、下基板33に
おける液晶を滴下した面が上を向くようにして移載機の
ハンドで下基板33を保持した後、この下基板33をチ
ャンバ15内に挿入して、上記の如く上昇させておいた
昇降ピン35上に下基板33を移載する。移載後、移載
機ハンドをチャンバ15の外に退避させ、ゲートバルブ
17を閉じ、更に昇降ピン35を下降させることによ
り、下基板33はテーブル9上に移載される。テーブル
9に下基板33を移載した後、テーブル9の吸引吸着孔
を動作させることにより、下基板33をテーブル9に真
空吸着する。
Next, the tip of the elevating pin 35 provided on the table 9 in the chamber 15 is raised so as to protrude from the upper surface of the table 9, and the surface of the lower substrate 33 on which the liquid crystal is dropped is raised. After holding the lower substrate 33 with the hand of the transfer machine so as to face the lower substrate 33, the lower substrate 33 is inserted into the chamber 15, and the lower substrate 33 is transferred onto the lifting pins 35 which have been raised as described above. Put on. After the transfer, the transfer machine hand is retracted out of the chamber 15, the gate valve 17 is closed, and the elevating pins 35 are further lowered, whereby the lower substrate 33 is transferred onto the table 9. After transferring the lower substrate 33 to the table 9, the lower substrate 33 is vacuum-sucked to the table 9 by operating the suction holes of the table 9.

【0027】上述の如く吸引吸着によって両基板33,
34をテーブル9及び加圧板16にそれぞれ固定した
ら、まず径の小さな方の排気配管20a側のバルブを開
放し、チャンバ15内のガスを徐々に排気する。ここで
排気時の排気速度は、ガスの流れにより基板が暴れず、
下基板33上の液晶が飛散せず、更には減圧によって水
分が凍結しない程度の速度に設定している。チャンバ1
5内の排気が徐々に行われ、排気速度が増加しても前記
の基板が暴れず、液晶が飛散せず、更には水分が凍結し
ない圧力になった時(例えば、真空吸着力で吸着してい
る上基板34が加圧板16から離れない程度の圧まで減
圧した時)、配管20aのバルブを閉じてから配管20
bのバルブを開放し、上下基板の貼り合わせを行う圧力
(5×10 −3Torr)までチャンバ内を急速に減圧す
る。
As described above, both substrates 33,
34 were fixed to the table 9 and the pressure plate 16, respectively.
First, open the valve on the exhaust pipe 20a side with the smaller diameter.
The gas in the chamber 15 is gradually exhausted. here
The pumping speed during pumping is such that the substrate does not run
The liquid crystal on the lower substrate 33 is not scattered.
The speed is set so that the minute does not freeze. Chamber 1
5 is gradually exhausted, and even if the exhaust speed increases,
Substrate does not run, liquid crystal does not scatter, and water freezes
Pressure (for example, if the vacuum
To a pressure at which the upper substrate 34 does not separate from the pressure plate 16.
Pressurized), close the valve of the pipe 20a,
Pressure for opening the valve b and bonding the upper and lower substrates
(5 × 10 -3Torr)
You.

【0028】ここで、上記の如くチャンバ15内を減圧
した際、上基板33の吸着力よりも真空室内の気圧が低
くなり、上基板34が加圧板16から離れる場合があ
る。そのため、チャンバ15内の加圧板16側には基板
保持爪40が設けられている。チャンバ15内の気圧が
下がり加圧板16から上基板34が離れた場合には、上
基板34はこの基板保持爪40で支持される。尚、基板
保持爪40は基板を吸引吸着する時や、機械的に加圧を
行う時(加圧板16で加圧する時)には、基板端面に掛
からないように移動(待避)している。
Here, when the pressure in the chamber 15 is reduced as described above, the pressure in the vacuum chamber may be lower than the suction force of the upper substrate 33, and the upper substrate 34 may be separated from the pressure plate 16. Therefore, a substrate holding claw 40 is provided on the pressure plate 16 side in the chamber 15. When the pressure in the chamber 15 decreases and the upper substrate 34 separates from the pressure plate 16, the upper substrate 34 is supported by the substrate holding claws 40. The substrate holding claw 40 is moved (evacuated) so as not to be caught on the substrate end surface when the substrate is sucked and sucked or when the substrate is mechanically pressurized (when pressed by the pressing plate 16).

【0029】上述の如くテーブル9及び加圧板16に保
持された両基板33,34を貼り合わせる工程を、図3
を参照して以下に詳細に説明する。図3は基板を保持し
てから加圧して基板を貼り合わせた後、チャンバ内を大
気開放するまでのチャンバ内の減圧状況と吸引力の作用
及びモータの駆動状況位置決め動作のタイムチャートを
示す図である。
The process of bonding the two substrates 33 and 34 held on the table 9 and the pressure plate 16 as described above is shown in FIG.
This will be described in detail below with reference to FIG. FIG. 3 is a diagram showing a time chart of the depressurization state in the chamber, the action of the suction force, and the motor driving state positioning operation after the substrate is held, the substrate is pressed and bonded, and then the chamber is opened to the atmosphere. It is.

【0030】図3に示すように、まず時刻t1において
上基板34が吸引吸着により加圧板16に吸着した後、
下基板33がチャンバ15内のテーブル9上に移載さ
れ、テーブル9上に吸引吸着する。次に時刻t2におい
てチャンバ内の減圧を開始する。ここで、減圧過程途中
のt3において、吸引吸着で加圧板16に保持していた
上基板34に掛かる吸引吸着力よりチャンバ内の圧力が
小さくなり、吸引吸着できずに上基板34が基板保持爪
40上に落下する場合がある。この場合には、所定の減
圧状態となった時刻t4で静電吸着を行う電極に通電し
て、再び加圧板16に上基板34を吸着する。尚、前記
所定の減圧状態とは、静電吸着板上の電極間で放電が起
きない状態である。
As shown in FIG. 3, first, at time t1, after the upper substrate 34 is attracted to the pressure plate 16 by suction / adsorption,
The lower substrate 33 is transferred onto the table 9 in the chamber 15 and is suction-adsorbed on the table 9. Next, at time t2, pressure reduction in the chamber is started. Here, at the time t3 in the middle of the depressurization process, the pressure in the chamber becomes smaller than the suction attraction force applied to the upper substrate 34 held by the pressure plate 16 by suction attraction, so that the upper substrate 34 cannot be suctioned and sucked, and There is a case where it falls on 40. In this case, at time t4 when a predetermined reduced pressure state is reached, electricity is supplied to the electrode for performing electrostatic attraction, and the upper substrate 34 is attracted to the pressure plate 16 again. Note that the predetermined reduced pressure state is a state in which no discharge occurs between the electrodes on the electrostatic attraction plate.

【0031】ここで、本実施形態において上記の如く吸
引吸着と静電吸着とを併用する理由を以下に示す。真空
吸着のみで加圧板16に上基板34を吸着しておくため
には、チャンバ15内を減圧する減圧力よりも大きな吸
着力で上基板34を吸引する必要があり、真空ポンプも
容量の大きな物を使わざるを得なくなる。また、上基板
34の加圧板16への静電吸着を大気中で行った後にそ
のまま減圧すると、上基板34と加圧板16との間に残
った空気が膨張して逃げるため部分的に上基板34と加
圧板16との間に隙間ができ、加圧板16に備えられた
正負の電極間で放電現象が発生して上基板34や加圧板
16が傷ついてしまう。更に、放電すると静電吸着力は
低下するので上基板34が落下し、この瞬間のある隙間
量で更に放電が発生する場合がある。この真空中の放電
は、パッシェンの法則により、電圧量と圧力,電極間ギ
ャップの関係で発生するため、大気中で上基板34を加
圧板16に静電吸着すると上記のように減圧中に空気が
逃げ出し、必ずこの現象が起こる。
Here, the reason why the suction suction and the electrostatic suction are used together as described above in the present embodiment will be described below. In order to hold the upper substrate 34 on the pressure plate 16 only by vacuum suction, it is necessary to suction the upper substrate 34 with a suction force larger than the depressurizing force for depressurizing the inside of the chamber 15, and the vacuum pump also has a large capacity. I have to use things. Further, if the pressure is directly reduced after the electrostatic adsorption of the upper substrate 34 to the pressure plate 16 is performed in the air, the air remaining between the upper substrate 34 and the pressure plate 16 expands and escapes, so that the upper substrate 34 is partially removed. A gap is formed between the pressure plate 34 and the pressure plate 16, and a discharge phenomenon occurs between the positive and negative electrodes provided on the pressure plate 16, and the upper substrate 34 and the pressure plate 16 are damaged. Further, when the discharge is performed, the electrostatic attraction force is reduced, so that the upper substrate 34 falls, and further discharge may occur at a certain gap amount at this moment. This discharge in vacuum is generated according to the relationship between the amount of voltage, the pressure and the gap between the electrodes according to Paschen's law. Escapes, and this phenomenon always occurs.

【0032】以上より、本実施形態では、放電現象の発
生しない程度まで真空にしてから静電吸着を行ってい
る。これにより、装置の小型化が図れると共に、確実か
つ完全に加圧板16やテーブル9面に両基板33,34
を吸着することができる。尚、図3に示すタイムチャー
トでは、減圧完了前にテーブル9と加圧板16との静電
吸着電極に電圧を印加して静電吸着を行うようにしてい
るが、減圧完了後に静電吸着を行うようにしてもよい。
As described above, in this embodiment, the electrostatic suction is performed after the vacuum is reduced to the extent that the discharge phenomenon does not occur. As a result, the size of the apparatus can be reduced, and both the substrates 33 and 34 can be reliably and completely mounted on the pressing plate 16 and the table 9.
Can be adsorbed. In the time chart shown in FIG. 3, the voltage is applied to the electrostatic attraction electrodes of the table 9 and the pressure plate 16 before the decompression is completed, and the electrostatic attraction is performed. It may be performed.

【0033】上記の如く両基板33,34を吸引吸着に
よりテーブル9及び加圧板16に固定した後、加圧板1
6をテーブル9と平行になるように調整する。その後、
Z軸方向移動ステージ部S3の中央ガイド板29を下降
するために、各加圧機構のモータを協調動作させて、上
基板34を下基板33に接近させる。まず、上基板34
が下基板34に設けた接着剤に接触する前に、認識用カ
メラ26を用いて上下基板に付けた位置合わせマークを
検出し、基板間の位置ずれを測定する。次に、得られた
測定値を用いて、下基板33を載置しているテーブル9
をステージS1を動作制御して上基板34に下基板33
の位置合わせを行う。
After the substrates 33 and 34 are fixed to the table 9 and the pressure plate 16 by suction and adsorption as described above, the pressure plate 1
6 is adjusted to be parallel to the table 9. afterwards,
In order to lower the central guide plate 29 of the Z-axis direction moving stage section S3, the motors of the pressing mechanisms are operated in cooperation to bring the upper substrate 34 closer to the lower substrate 33. First, the upper substrate 34
Before contacting with the adhesive provided on the lower substrate 34, the alignment marks provided on the upper and lower substrates are detected using the recognition camera 26, and the positional deviation between the substrates is measured. Next, using the measured values obtained, the table 9 on which the lower substrate 33 is placed is placed.
The operation of the stage S1 is controlled so that the lower substrate 33
Perform position adjustment.

【0034】位置合わせ後、中央ガイド板29をさらに
降下して下基板33に塗布された接着剤を潰し、接着剤
で形成された枠内に液晶を封入した状態で1次の貼り合
わせを行う。尚、1次貼り合わせの作業中で、上基板3
4が接着剤に接触直後に、再度カメラを用いて位置合わ
せ作業を行う。この位置合わせ作業は、最大の加圧力を
加え終わるまでの間に複数回繰り返す。このように位置
合わせを数回繰り返す理由は、加圧力を均等に加えて
も、接着剤が均一に塗られていないために接着剤の潰れ
方も均一にはならず、接着剤部で力の作用の不均一な部
分が発生し、その結果、上下の基板間に剪断力が作用し
て基板間のずれが発生するためである。
After the alignment, the central guide plate 29 is further lowered to crush the adhesive applied to the lower substrate 33, and the first bonding is performed in a state where the liquid crystal is sealed in a frame formed of the adhesive. . During the primary bonding operation, the upper substrate 3
Immediately after contact with the adhesive, the positioning operation is performed again using the camera. This positioning operation is repeated a plurality of times until the maximum pressure is completely applied. The reason for repeating the alignment several times in this way is that even if the pressing force is applied evenly, the adhesive is not evenly applied, so the method of crushing the adhesive is not uniform, and the force of the adhesive part is This is because a non-uniform portion of the action occurs, and as a result, a shear force acts between the upper and lower substrates to cause a displacement between the substrates.

【0035】上記1次貼り合わせ後、加圧板16の静電
吸着電極の印加電圧を切断し、その後、吸引吸着も中止
する。そして、加圧機構を動作させ加圧板16を上昇さ
せる。その後、チャンバ15内にガスを注入して、チャ
ンバ15内の気圧を大気圧に戻す。
After the first bonding, the voltage applied to the electrostatic attraction electrode of the pressure plate 16 is cut off, and then the attraction and attraction is stopped. Then, the pressure mechanism is operated to raise the pressure plate 16. Thereafter, gas is injected into the chamber 15 to return the pressure in the chamber 15 to the atmospheric pressure.

【0036】ここで、貼り合わせ時に加圧板16を厳密
にテーブル9上面と平行にすることが困難であるため、
貼り合わせ時に接着剤が不均一に潰れたり、基板自体の
変形等により接着剤が不均一に潰れてしまい、貼り合わ
せ後の基板間隔が一定にならない。そこで、上記の如く
加圧板16を上昇する前に、基板の各辺の接着剤の潰れ
量を観測し、潰れ量の小さな辺に対しては、周辺(4隅
部)に配置した加圧機構の内、潰れ量の小さな辺側の加
圧機構の加圧力を大きくすると共に他の辺側の加圧機構
の加圧力を下げることによって、接着剤の潰れ量が均等
になるように調整を行う。
Here, it is difficult to make the pressing plate 16 strictly parallel to the upper surface of the table 9 at the time of bonding.
At the time of bonding, the adhesive is crushed unevenly, or the adhesive is crushed unevenly due to deformation of the substrate itself, and the distance between the substrates after bonding is not constant. Therefore, before the pressure plate 16 is lifted as described above, the amount of crushing of the adhesive on each side of the substrate is observed, and for the side having a small amount of crushing, a pressing mechanism disposed at the periphery (four corners). Among them, by adjusting the pressing force of the pressing mechanism on the side with the smaller crushing amount and lowering the pressing force of the pressing mechanism on the other side, the crushing amount of the adhesive is adjusted to be uniform. .

【0037】尚、本実施形態では減圧されたチャンバ1
5内で接着剤の潰れ量の観測を行うようにしているが、
チャンバ15内を大気圧に戻した後に行ってもよい。ま
た、基板を数枚貼り合わせ、接着剤の各部の潰れ量が均
一になるように、各加圧機構の加圧力をそれぞれ設定し
てもよい。
In this embodiment, the pressure in the chamber 1 is reduced.
Although the amount of crushing of the adhesive is observed in 5,
It may be performed after returning the inside of the chamber 15 to the atmospheric pressure. Further, several substrates may be bonded together, and the pressing force of each pressing mechanism may be set so that the amount of crushing of each part of the adhesive becomes uniform.

【0038】以下、上記の接着剤の各部の潰れ量を均一
にする動作について、図4及び図5を参照して説明す
る。図4は接着剤37がアンバラスで潰れた状態の一例
を示す図であり、図5は図4の状態の時のギャップの調
整方法を示す図である。
The operation for equalizing the amount of crushing of each part of the adhesive will be described below with reference to FIGS. FIG. 4 is a diagram showing an example of a state in which the adhesive 37 is crushed by an imbalance, and FIG. 5 is a diagram showing a method of adjusting a gap in the state of FIG.

【0039】図4の如く、図中左側の接着剤37の潰れ
量が大きく右側が小さい場合、図5の如く、加圧機構4
1、42の加圧力を減少させ且つ加圧機構43、44の
加圧力を増加させることによって矢印の方向に加圧機構
を動作させる。尚、中央部はそのままの状態を保つ。以
上により、基板の変形や接着剤37の不均一な塗布量等
に起因する基板間の隙間の不均一性を解消できる。ま
た、本実施形態では基板周辺部を独立して加圧するため
に、各加圧機構は独立して駆動できるように構成されて
いる。尚、接着剤37の潰れ量の観測方法としては目視
でもよいが、カメラ等の光学系を用いて測定する方法や
ギャップセンサ等を用いて検出する方法等がある。
As shown in FIG. 4, when the amount of crushing of the adhesive 37 on the left side in the figure is large and the amount on the right side is small, as shown in FIG.
The pressurizing mechanism is operated in the direction of the arrow by decreasing the pressurizing force of the pressurizing mechanisms 1 and 42 and increasing the pressurizing force of the pressurizing mechanisms 43 and 44. The central part is kept as it is. As described above, the non-uniformity of the gap between the substrates due to the deformation of the substrate and the non-uniform application amount of the adhesive 37 can be eliminated. In addition, in the present embodiment, in order to independently press the peripheral portion of the substrate, each pressing mechanism is configured to be independently driven. The method of observing the amount of crushing of the adhesive 37 may be visual, but may be a method of measuring using an optical system such as a camera or a method of detecting using a gap sensor or the like.

【0040】ここで、パネルの大きさが小さい場合には
前述のような機械的な加圧機構で所望の加圧力を加える
ことができるが、パネルの大きさが大きくなると、機械
的な加圧力で基板間を所定の間隔にするために、加圧装
置自体を大きくすると共に、大きな加圧力を印加できる
ようにする必要がある。装置の大きさを現状の大きさに
維持するためには、他の加圧手段を検討する必要がある
が、真空状態から大気圧に圧力を変化させると、基板内
が真空状態のため基板全体に大きな圧力を加えることが
でき、例えば基板の大きさが1200mm×1000m
mの2枚の基板に、基板内部が真空状態の時、大気圧を
加えると121.6kNの力を作用させることができ
る。
Here, when the size of the panel is small, a desired pressing force can be applied by the mechanical pressing mechanism as described above. However, when the size of the panel is large, the mechanical pressing force is increased. In order to set a predetermined distance between the substrates, it is necessary to increase the size of the pressing device itself and to apply a large pressing force. In order to maintain the size of the device at the current size, it is necessary to consider other pressing means.However, when the pressure is changed from a vacuum state to atmospheric pressure, the entire substrate is Large pressure can be applied to, for example, a substrate having a size of 1200 mm × 1000 m.
When atmospheric pressure is applied to the two substrates of m when the inside of the substrates is in a vacuum state, a force of 121.6 kN can be applied.

【0041】現状の装置で加圧板16により機械的に最
大限の加圧力を加えたときの基板間の隙間は、約15μ
m程度となっており、接着状態も不完全である。すなわ
ち、1次加圧(予備加圧)状態ではまだ所望の間隔にな
っていないため、接着剤の潰れ量は少なく、接着剤の上
下基板との接触部長さは短い。更に、セル内に封入され
ている液晶もセル内に広がっておらず、液晶間に大きな
真空空間部ができており、適正な基板間隔である5μm
以下(好ましくは4μm以下)のギャップにするために
は更に加圧する必要がある。
The gap between the substrates when the maximum pressure is mechanically applied by the pressing plate 16 in the current apparatus is about 15 μm.
m, and the bonding state is incomplete. That is, since the desired interval has not yet been achieved in the primary pressurization (preliminary pressurization) state, the amount of crushing of the adhesive is small, and the length of the contact portion between the adhesive and the upper and lower substrates is short. Furthermore, the liquid crystal sealed in the cell does not spread in the cell, and a large vacuum space is formed between the liquid crystals.
Further pressure is required to make the gap less than or equal to (preferably 4 μm or less).

【0042】基板を2次加圧(チャンバ内を大気圧に戻
すことによる加圧:本加圧)するにあたり、基板間のセ
ル内が真空状態に近いため周囲を大気圧に戻すことで基
板面全体にほぼ均一に圧力を加えることが可能となる。
ただし、一気に大気圧に戻した場合、接着剤37がまだ
十分に潰れていないため、ガスがこの接着剤37を破り
セル内の真空空間部に入り込んでしまい、液晶基板とし
ては不良品になってしまう。そこで本実施形態では、加
圧板16による加圧終了後、加圧板16を基板面から離
し、細い配管21の弁22を開放して圧力源で加圧され
たガスをチャンバ15内に導入することで徐々に大気圧
に戻す。又この時同時に、吸引吸着孔を利用して大気
(又は窒素ガス等)をチャンバ15内に導入すること
で、チャンバ15内のガスの分布の均一化を図ることも
可能である。このように、チャンバ15内を徐々に大気
圧に戻していくと、セルには徐々に圧力が加わり、接着
剤37が徐々に潰れる。セル内の真空の空間部の圧力と
チャンバ15内の圧力との差が徐々に大きくなるため、
導入されたガスが接着剤を破ってセル内に入り込むこと
はなく、接着剤と上下基板の接触面積も徐々に拡大す
る。
When the substrate is subjected to secondary pressurization (pressurization by returning the inside of the chamber to atmospheric pressure: main pressurization), since the inside of the cell between the substrates is almost in a vacuum state, the surroundings are returned to atmospheric pressure, so that the substrate surface is restored. It is possible to apply pressure almost uniformly to the whole.
However, when the pressure is returned to the atmospheric pressure at a stretch, the adhesive 37 is not yet sufficiently crushed, so that the gas breaks the adhesive 37 and enters the vacuum space in the cell, resulting in a defective liquid crystal substrate. I will. Therefore, in this embodiment, after the pressurization by the pressurizing plate 16 is completed, the pressurizing plate 16 is separated from the substrate surface, the valve 22 of the thin pipe 21 is opened, and the gas pressurized by the pressure source is introduced into the chamber 15. To gradually return to atmospheric pressure. At the same time, by introducing the atmosphere (or nitrogen gas or the like) into the chamber 15 using the suction holes, the distribution of the gas in the chamber 15 can be made uniform. As described above, when the inside of the chamber 15 is gradually returned to the atmospheric pressure, pressure is gradually applied to the cell, and the adhesive 37 is gradually crushed. Since the difference between the pressure in the vacuum space in the cell and the pressure in the chamber 15 gradually increases,
The introduced gas does not break the adhesive and enter the cell, and the contact area between the adhesive and the upper and lower substrates gradually increases.

【0043】また基板間のギャップが約10μm程度に
なった時に、接着剤37が潰れることで流動が起こり、
チクソトロピー性によって粘度が低下する。接着剤37
の粘度が低下した状態で、急速に大気圧に戻す大気開放
弁23を開放することで基板に大きな加圧力を加える。
この時、既に接着剤は基板に対して広がっており、シー
ル性が向上しているためセル内にガスが接着剤を破って
入り込むことはなく、また接着剤は、粘度が低下してい
るため速やかに潰れ、液晶も加圧されることにより潰れ
て広がるため、基板の貼り合わせ時間が短くなる。尚、
大気開放弁23はチャンバ15に設けた圧力計が所定圧
を超えたことを検出してから開放するものである。
When the gap between the substrates becomes about 10 μm, the adhesive 37 is crushed and a flow occurs.
The viscosity decreases due to thixotropic properties. Adhesive 37
With the viscosity of the substrate lowered, a large pressing force is applied to the substrate by opening the air release valve 23 for rapidly returning the pressure to the atmospheric pressure.
At this time, the adhesive has already spread to the substrate, and the sealing property has been improved, so that gas does not break into the cell and enter the cell, and the adhesive has a reduced viscosity. Since the liquid crystal is quickly crushed and the liquid crystal is crushed and expanded by being pressed, the bonding time of the substrates is shortened. still,
The atmosphere release valve 23 is opened after detecting that a pressure gauge provided in the chamber 15 exceeds a predetermined pressure.

【0044】以上のようにして、本実施形態における貼
り合わせ動作が行われる。尚、本実施形態における工程
では、加圧板の中央部を加圧する加圧機構と周辺部を加
圧する4つの加圧機構を加圧時に同時に動作させている
が、5つの加圧機構を同時に作用させずに、まず中央の
加圧機構で加圧して、基板に加わる加圧力の不均一性又
は接着剤の量の不均一性による接着剤の潰れの不均一性
を解消するために、接着剤の潰れ状態を観測し、その観
測結果に基づいて各加圧機構を個別に動作させることに
より、接着剤の潰れ量を均一にすることも可能である。
As described above, the bonding operation in this embodiment is performed. In the process of the present embodiment, the pressing mechanism for pressing the central portion of the pressing plate and the four pressing mechanisms for pressing the peripheral portion are simultaneously operated at the time of pressing, but the five pressing mechanisms are simultaneously operated. Instead, pressurize with the central pressurizing mechanism first, and remove the non-uniformity of the crushing of the adhesive due to the non-uniformity of the pressing force applied to the substrate or the non-uniformity of the amount of the adhesive. It is also possible to make the amount of crushing of the adhesive uniform by observing the state of crushing and operating each pressing mechanism individually based on the observation result.

【0045】また、中央部の加圧機構を設けずに、四角
な基板の各角部付近(四角の辺)を加圧する加圧機構を
それぞれ配置して、4つの加圧機構を協調制御して加圧
力を印加すると共に、加圧力を印加後に接着剤の潰れ量
を観測し、その潰れ量に応じて4つの加圧機構をそれぞ
れ独立して駆動することで接着剤の潰れ量の均一化を図
ることも可能である。
In addition, without providing a pressing mechanism at the center, a pressing mechanism for pressing around each corner (square side) of the square substrate is arranged, and the four pressing mechanisms are controlled in a coordinated manner. The applied pressure is applied, and after the applied pressure is applied, the crushing amount of the adhesive is observed, and the four pressing mechanisms are independently driven according to the crushing amount, thereby equalizing the crushing amount of the adhesive. It is also possible to plan.

【0046】以下、本発明の他の実施形態について説明
する。図7は本発明の他の実施形態の側面図であり、図
7(a)は部分側面図であり、図7(b)は他の実施形
態において潰れのアンバランスがあるときの図である。
Hereinafter, another embodiment of the present invention will be described. FIG. 7 is a side view of another embodiment of the present invention, FIG. 7 (a) is a partial side view, and FIG. 7 (b) is a view when another embodiment has a collapse imbalance. .

【0047】本実施形態と先に説明した一実施形態との
相違点は、中央の加圧機構45によって中央ガイド板2
9を押し下げた時に、基板周辺部に設けた4つの加圧機
構が中央ガイド板29と一緒に下側に移動する構成とし
た点である。すなわち、4つの加圧機構41〜44が、
中央ガイド板29と一緒に移動するように加圧機構ガイ
ド部材55に固定されている。そして、4つの加圧機構
から中央ガイド部材29に力を作用させる場合は、それ
ぞれのボールネジを駆動することで、加圧機構ガイド部
材55と中央ガイド部材の間隔を可変して行うように構
成したものである。このように、4つの加圧機構の動作
を中央の加圧機構の動作と分離して行えるようにしたた
め、制御が簡単になると共に、作業時間の短縮を図るこ
とが可能となる。
The difference between this embodiment and the above-described embodiment is that the central guide plate 2
The point is that the four pressing mechanisms provided in the peripheral portion of the substrate move downward together with the central guide plate 29 when the substrate 9 is pushed down. That is, the four pressing mechanisms 41 to 44
The pressing mechanism guide member 55 is fixed so as to move together with the central guide plate 29. When a force is applied to the central guide member 29 from the four pressing mechanisms, the respective ball screws are driven to vary the distance between the pressing mechanism guide member 55 and the central guide member. Things. As described above, since the operations of the four pressing mechanisms can be performed separately from the operations of the central pressing mechanism, the control is simplified and the working time can be reduced.

【0048】尚、本実施形態で用いた液晶基板は、大型
の基板で多面取りを行うものである。そのため、本実施
形態において使用する基板には、図6に示すように、複
数の液晶基板を構成するシール37部全体を囲むように
ダミーシール39を設けることで、液晶基板を構成する
シール部とダミーシール部との真空状態の作用により基
板のダミーシールで構成される面全体が均一な圧力分布
となり、本装置を使用することで更に精度の良い基板間
隔の液晶パネルを形成することが可能となる。
Note that the liquid crystal substrate used in the present embodiment is a large-sized substrate which is used for multi-paneling. For this reason, as shown in FIG. 6, the substrate used in the present embodiment is provided with a dummy seal 39 so as to surround the entirety of the seal 37 constituting a plurality of liquid crystal substrates. Due to the action of the vacuum state with the dummy seal portion, the entire surface of the substrate formed by the dummy seal has a uniform pressure distribution, and by using this apparatus, it is possible to form a liquid crystal panel with more accurate substrate spacing. Become.

【0049】[0049]

【発明の効果】以上、本発明の貼り合わせ装置及び貼り
合わせ方法を用いることで、2枚の基板(特に、液晶基
板)を確実に精度よく、短時間に、且つ安全に貼り合わ
せることができる。
As described above, by using the bonding apparatus and the bonding method of the present invention, two substrates (particularly, a liquid crystal substrate) can be bonded with high accuracy, in a short time, and safely. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の基板貼り合わせ装置の正面図である。FIG. 1 is a front view of a substrate bonding apparatus according to the present invention.

【図2】図1を上から見たときの上面図である。FIG. 2 is a top view when FIG. 1 is viewed from above.

【図3】真空中で貼り合わせを行うときの各部の動作の
タイムチャートを示す図である。
FIG. 3 is a diagram showing a time chart of the operation of each unit when bonding is performed in a vacuum.

【図4】真空中で機械的に加圧力を加えた際に、基板間
シールの潰れのアンバランスがあるときの図である。
FIG. 4 is a diagram when there is an imbalance in collapse of a seal between substrates when mechanical pressure is applied in a vacuum.

【図5】図4のアンバランスが発生したときの調整方法
を示す図である。
5 is a diagram illustrating an adjustment method when the imbalance in FIG. 4 occurs.

【図6】本発明の貼り合わせ装置を用いたときのシール
部材の塗布形状の一例を示す図である。
FIG. 6 is a view showing an example of an application shape of a seal member when the bonding apparatus of the present invention is used.

【図7】本発明の他実施形態の側面図であり、図7
(a)は部分側面図であり、図7(b)は他実施形態に
おいて潰れのアンバランスがあるときの図である。
FIG. 7 is a side view of another embodiment of the present invention, and FIG.
FIG. 7A is a partial side view, and FIG. 7B is a view when there is an imbalance of collapse in another embodiment.

【符号の説明】[Explanation of symbols]

9…テーブル、15…チャンバ、16…加圧板、20a
…配管、20b…配管、22…徐々に大気圧に戻す弁、
23…大気開放弁、33…下基板、34…上基板、37
…接着剤、40…基板保持爪、41〜45…加圧機構。
9 table, 15 chamber, 16 pressure plate, 20a
... Piping, 20b ... Piping, 22 ... Valve that gradually returns to atmospheric pressure
23 ... air release valve, 33 ... lower substrate, 34 ... upper substrate, 37
... adhesive, 40 ... substrate holding claws, 41-45 ... pressure mechanism.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 齊藤 正行 茨城県竜ヶ崎市向陽台5丁目2番 日立テ クノエンジニアリング株式会社竜ヶ崎工場 内 (72)発明者 中山 幸徳 茨城県竜ヶ崎市向陽台5丁目2番 日立テ クノエンジニアリング株式会社竜ヶ崎工場 内 (72)発明者 村山 孝夫 茨城県竜ヶ崎市向陽台5丁目2番 日立テ クノエンジニアリング株式会社竜ヶ崎工場 内 Fターム(参考) 2H088 FA01 FA09 FA16 FA30 MA20 2H089 LA41 NA22 NA24 NA37 NA38 NA48 NA49 NA60 2H090 JB02 JC11 JC18 5G435 AA01 AA17 BB12 KK03 KK05 KK09 KK10  ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masayuki Saito 5-2-2 Koyodai, Ryugasaki-shi, Ibaraki Pref. Hitachi Techno Engineering Co., Ltd. Ryugasaki Plant (72) Inventor Yukinori Nakayama 5-2-2 Koyodai, Ryugasaki-shi, Ibaraki Hitachi (72) Inventor Takao Murayama 5-2-2 Koyodai, Ryugasaki-shi, Ibaraki Hitachi Techno Engineering Co., Ltd. Ryugasaki Plant F-term (reference) 2H088 FA01 FA09 FA16 FA30 MA20 2H089 LA41 NA22 NA24 NA37 NA38 NA48 NA49 NA60 2H090 JB02 JC11 JC18 5G435 AA01 AA17 BB12 KK03 KK05 KK09 KK10

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 貼り合わせる2枚の基板の内の少なくと
も1方の基板に接着剤を塗布した後、減圧状態のチャン
バ内で他方の基板との位置を合わせた後、前記他方の基
板を機械的に加圧して貼り合わせ行う基板貼り合わせ装
置において、 前記基板の4つの角部相当の位置近傍にそれぞれ独立に
加圧可能に配置された第1から第4の加圧機構と、主の
加圧を行う第5の加圧機構とを設け、前記第5の加圧機
構に加えて第1から第4の加圧機構を動作させた後、前
記基板の貼り合わせ状況に応じて、前記第1から第4の
加圧機構の加圧力を可変制御する制御部を備えたことを
特徴とする基板貼り合わせ装置。
1. An adhesive is applied to at least one of two substrates to be bonded, and the position of the other substrate is adjusted in a reduced pressure chamber. A first to fourth pressing mechanisms, each of which is independently pressurizable in the vicinity of a position corresponding to four corners of the substrate, and a main processing unit. A fifth pressure mechanism for performing pressure, and after operating the first to fourth pressure mechanisms in addition to the fifth pressure mechanism, the fifth pressure mechanism is operated in accordance with the bonding state of the substrates. A substrate bonding apparatus, comprising: a control unit that variably controls pressures of first to fourth pressing mechanisms.
【請求項2】 減圧状態のチャンバ内で貼り合せる2枚
の基板の内の一方の基板を保持する保持テーブルと、他
方の基板を吸着する吸着機構を備えた加圧板と、前記加
圧板を介して他方の基板を一方の基板に加圧する加圧機
構と、前記2枚の基板の位置を合わせる位置合わせ機構
と、を備えた基板貼り合わせ装置において、 前記加圧機構は、基板の4つの角部近傍に配置されそれ
ぞれ独立に加圧可能な第1から第4の加圧機構から成
り、前記第1から第4の加圧機構を所定の圧力まで動作
させ、貼り合わせ状況を観測後、前記貼り合わせ状況に
応じて前記4つの加圧機構の加圧力を可変制御する制御
部を備えたことを特徴とする基板貼り合わせ装置。
2. A pressure plate having a holding table for holding one of two substrates to be bonded in a chamber in a reduced pressure state, a pressure plate provided with a suction mechanism for sucking the other substrate, and A pressing mechanism for pressing the other substrate against the one substrate, and a positioning mechanism for positioning the two substrates, wherein the pressing mechanism comprises four corners of the substrate. The first to fourth pressing mechanisms are arranged in the vicinity of the unit and can be independently pressurized. The first to fourth pressing mechanisms are operated to a predetermined pressure, and after observing the bonding state, A substrate bonding apparatus, comprising: a control unit that variably controls pressurizing forces of the four pressing mechanisms according to a bonding state.
【請求項3】 請求項1又は2に記載の基板貼り合わせ
装置において、前記加圧板に備えた吸着機構は、吸引吸
着を行う吸引吸着機構と、静電力で吸着を行う静電吸着
機構の2つの吸着機構を備え、大気中から真空状態にな
り、機械的加圧による貼り合わせが終了するまで吸引吸
着機構を動作させ、所定の減圧状態から機械的加圧によ
る貼り合わせが終了するまで静電吸着機構を動作させる
構成とした基板貼り合わせ装置。
3. The substrate bonding apparatus according to claim 1, wherein the suction mechanism provided on the pressure plate includes a suction suction mechanism that performs suction suction and an electrostatic suction mechanism that performs suction by electrostatic force. It is equipped with two suction mechanisms, and operates from the atmosphere to a vacuum state until the bonding by mechanical pressure is completed. A substrate bonding apparatus configured to operate a suction mechanism.
【請求項4】 請求項1乃至3の内のいずれか1項に記
載の基板貼り合わせ装置において、前記減圧状態のチャ
ンバ内で機械的加圧を終了後、基板に大気圧を加えるこ
とで本加圧して基板間隔を所定の間隔とすることを特徴
とする基板貼り合わせ装置。
4. The substrate bonding apparatus according to claim 1, wherein after the mechanical pressurization is completed in the reduced pressure chamber, atmospheric pressure is applied to the substrate. A substrate bonding apparatus, wherein pressure is applied to set a substrate interval to a predetermined interval.
【請求項5】 減圧されたチャンバ内に、2枚の基板の
うちの少なくともどちらか一方を接着剤で囲い、接着剤
で囲われたシール面に相当する部位に液晶を滴下し、液
晶を滴下した一方の基板の液晶滴下面を上にしてテーブ
ルに設けた吸引吸着機構で基板をテーブルに固定し、他
方の基板を加圧板に吸引吸着して固定した後、チャンバ
内を減圧にしていき、所定の減圧状態となったときに、
静電吸着機構を動作させ、他方の基板を確実に加圧板に
吸着し、その状態で下基板との位置合わせを行い、位置
合わせ終了後、加圧板中央部、及び4つの角部付近を加
圧する5つの加圧機構を動作させて加圧貼り合わせを行
い、その後、基板間の間隔を観測して、基板間の間隔に
応じて前記4つの角部付近に設けたそれぞれの加圧機構
の加圧力を可変して加圧することで基板間の間隔を略均
一にするようにした基板貼り合わせ方法。
5. A pressure-reduced chamber, wherein at least one of the two substrates is surrounded by an adhesive, and a liquid crystal is dropped on a portion corresponding to a sealing surface surrounded by the adhesive, and the liquid crystal is dropped. After fixing the substrate to the table with the suction suction mechanism provided on the table with the liquid crystal dropping surface of one of the substrates facing up, and fixing the other substrate by suction and suction to the pressure plate, the inside of the chamber was depressurized, When the predetermined decompression state is reached,
Activate the electrostatic attraction mechanism to securely adsorb the other substrate to the pressure plate, perform alignment with the lower substrate in that state, and after positioning is completed, apply pressure to the center of the pressure plate and the four corners. The pressure bonding is performed by operating the five pressing mechanisms for pressing, and thereafter, the intervals between the substrates are observed, and the respective pressing mechanisms provided in the vicinity of the four corners according to the intervals between the substrates are observed. A substrate bonding method in which the distance between substrates is made substantially uniform by changing the pressure and applying pressure.
【請求項6】 真空チャンバ内に、2枚の基板のうちの
一方の基板に環状の接着剤を塗布し、その環状面内に液
晶を滴下した後、液晶面を上にしてテーブル上に固定
し、他方の基板を加圧板に吸着し、下基板と位置合わせ
後、加圧板中央部に設けた加圧機構により、上基板と下
基板を加圧貼り合わせを行い、所定の加圧力で貼り合わ
せ終了後、貼り合わせた基板の間隔を測定し、その測定
結果に応じて、加圧板の4つの角部付近を加圧する4つ
の加圧機構をそれぞれ独立して動作させて、基板間の間
隔が略均一になるように貼り合わせることを特徴とする
基板貼り合わせ方法。
6. An annular adhesive is applied to one of the two substrates in a vacuum chamber, and liquid crystal is dropped on the annular surface, and then fixed on a table with the liquid crystal surface facing upward. Then, the other substrate is adsorbed to the pressure plate, and after positioning with the lower substrate, the upper substrate and the lower substrate are pressure-bonded by the pressure mechanism provided at the center of the pressure plate, and bonded with a predetermined pressure. After the alignment is completed, the distance between the bonded substrates is measured, and according to the measurement result, the four pressing mechanisms for pressing the vicinity of the four corners of the pressing plate are independently operated, and the distance between the substrates is determined. A substrate bonding method, wherein the substrates are bonded so as to be substantially uniform.
【請求項7】 減圧されたチャンバ内に、2枚の基板の
うちの少なくともどちらか一方を接着剤で囲い、接着剤
で囲われたシール面に相当する部位に液晶を滴下し、液
晶を滴下した一方の基板の液晶滴下面を上にしてテーブ
ルに設けた吸引吸着機構で基板をテーブルに固定し、他
方の基板を加圧板に吸引吸着して固定した後、チャンバ
内を減圧にしていき、所定の減圧状態となったときに、
静電吸着機構を動作させ、他方の基板を確実に加圧板に
吸着し、その状態で下基板との位置合わせを行い、位置
合わせ終了後、加圧板中央部、及び4つの角部付近を加
圧する5つの加圧機構を動作させて加圧貼り合わせを行
い、その後チャンバ内を大気圧に戻し、基板間のシール
の潰れ状態を観測して、シールの潰れ状態に応じて前記
4つの角部付近に設けたそれぞれの加圧機構の加圧力を
可変して加圧することで基板間のシールの潰れ量を略均
一にするようにした基板貼り合わせ方法。
7. A pressure-reduced chamber, wherein at least one of the two substrates is surrounded by an adhesive, and a liquid crystal is dropped on a portion corresponding to a sealing surface surrounded by the adhesive, and the liquid crystal is dropped. After fixing the substrate to the table with the suction suction mechanism provided on the table with the liquid crystal dropping surface of one of the substrates facing up, and fixing the other substrate by suction and suction to the pressure plate, the inside of the chamber was depressurized, When the predetermined decompression state is reached,
Activate the electrostatic attraction mechanism to securely adsorb the other substrate to the pressure plate, perform alignment with the lower substrate in that state, and after positioning is completed, apply pressure to the center of the pressure plate and the four corners. The pressure is bonded by operating the five pressing mechanisms for pressing, and then the inside of the chamber is returned to the atmospheric pressure, the state of the seal between the substrates is crushed, and the four corners are determined according to the crushed state of the seal. A substrate bonding method in which the pressing force of each of the pressing mechanisms provided in the vicinity is changed and pressurized so that the amount of crushing of the seal between the substrates is made substantially uniform.
【請求項8】 真空チャンバ内に、2枚の基板のうちの
一方の基板に環状の接着剤を塗布し、その環状面内に液
晶を滴下した後、液晶面を上にしてテーブル上に固定
し、他方の基板を加圧板に吸着し、下基板と位置合わせ
後、加圧板中央部に設けた加圧機構により、上基板と下
基板を加圧貼り合わせを行い、所定の加圧力で貼り合わ
せ終了後、一旦大気圧に戻し、貼り合わせた基板のシー
ルの潰れ状態を観測し、その観測結果に応じて、加圧板
の4つの角部付近を加圧する4つの加圧機構をそれぞれ
独立して動作させて、基板間のシールの潰れ量が略均一
になるように貼り合わせることを特徴とする基板貼り合
わせ方法。
8. An annular adhesive is applied to one of the two substrates in a vacuum chamber, and liquid crystal is dropped on the annular surface, and then fixed on a table with the liquid crystal surface facing upward. Then, the other substrate is adsorbed to the pressure plate, and after positioning with the lower substrate, the upper substrate and the lower substrate are pressure-bonded by the pressure mechanism provided at the center of the pressure plate, and bonded with a predetermined pressure. After the alignment is completed, the pressure is once returned to the atmospheric pressure, the collapse state of the seal of the bonded substrates is observed, and according to the observation result, four pressing mechanisms for pressing the vicinity of the four corners of the pressing plate are independently provided. And bonding the substrates so that the amount of crushing of the seal between the substrates is substantially uniform.
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TW91103319A TW574575B (en) 2001-04-17 2002-02-25 Substrate assembling method and assembling apparatus
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