JP2002300081A - High frequency module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high frequency module comprising a layered body with a plurality of dielectric layers that adopts a configuration of incorporating a switch and a coupler so as to prevent a monitor level from being in dispersion due to the effect of a deviated lamination. SOLUTION: A resistor 21 able to be trimmed as a termination resistor connected to one terminal of a coupler coupling line is placed on the uppermost dielectric layer 11 and variably adjusting the resistance of the resistor 21 can match the impedance at the switch side even on the occurrence of the deviated lamination of a module substrate while detecting a monitor level in an inspection process after the manufacturing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency module having a plurality of transmission / reception systems having different pass bands.

[0002]

2. Description of the Related Art In recent years, a portable telephone employing a dual band system has been proposed in contrast to an ordinary portable telephone employing one transmission / reception system. The dual-band mobile phone is equipped with two transmitting / receiving systems in one mobile phone, and the convenience of selecting and transmitting a transmitting / receiving system that matches the regional characteristics and the purpose of use is provided. It is expected to be a high device.

In recent years in Europe, a dual-band mobile phone equipped with both the GSM system / DCS system as a plurality of transmission / reception systems having different pass bands has been studied. Dual-band mobile phones require the installation of circuits necessary for the configuration of each transmission / reception system.However, if circuits are configured using individual dedicated components, the size and cost of the equipment will increase. Becomes Therefore, it is demanded that the circuit portions that can be shared be made as common as possible to advantageously develop the miniaturization and cost reduction of the device. In today's dual-band high-frequency module, instead of a type in which the components that make up the high-frequency switch and coupler are mounted on a printed wiring board, the high-frequency switch and coupler are integrated into a module, and the capacitors that make up the module are further integrated. It has been proposed to reduce the size of a module by arranging components and elements such as lines and the like in a laminate including a plurality of dielectric layers, for example, by appropriately arranging each ceramic layer in a three-dimensional manner and arranging them three-dimensionally.

FIG. 6 shows a block diagram of a high-frequency module at present. High-frequency modules have different passbands 2
Circuit DI for dividing one transmitting / receiving system into each transmitting / receiving system 1 and 2
P1, a dual-band switch SW having diode switch circuits SW1 and SW2 for switching between a transmission system Tx and a reception system Rx in the transmission and reception systems 1 and 2, respectively, and a transmission system Tx side of the transmission and reception system 2, A low-pass filter LPF2 for removing a harmonic component signal, and a coupler COP provided on the transmission system Tx terminal side of the diode switch circuits SW1 and SW2 and corresponding to each pass frequency for monitoring each output of the power amplifiers AMP1 and AMP2.
3 and COP4. High frequency switch SW
1, SW2, in a GSM / DCS dual-band mobile phone, connection between transmission systems Tx1 and Tx2 corresponding to respective transmission and reception systems and a demultiplexing circuit DIP1, which is a common circuit, and reception systems Rx1 and Rx2 and a common circuit Is used to switch the connection with the demultiplexing circuit DIP1. Also, each coupler COP on the transmission system Tx1 and Tx2 side
3, COP4 is connected to each power amplifier AMP1, AMP2
A part of the transmission signal amplified by the above is taken out, and plays a role of sending a feedback signal to the automatic gain control circuits APC1 and APC2.

A conventional high-frequency module is, for example, a laminate formed by laminating eight dielectric layers.
The high-frequency switch unit and the coupler unit that constitute the high-frequency module are integrated in the laminate. For example, a diode as one element constituting a high-frequency switch, chip components such as a capacitor and an inductor constituting a filter, a main transmission line (main strip line) constituting a coupler through which a signal from an amplifier passes, and a sub-transmission line (sub-strip) Lines and coupling lines) are formed or mounted on the respective dielectric layers. By the way, one end of the coupling line, which is a sub-transmission line, is connected to a terminating resistor of usually 50Ω formed by a resistance pattern, thereby matching with the characteristic impedance of the high-frequency switches SW1 and SW2. I have.

[0006]

However, in the conventional module, since a large number of dielectric layers are laminated, when a misalignment occurs, the upper and lower dielectric layers may have patterns and grounds. As a result of a shift in the formation positional relationship, there is a problem that the shape and the like of each element constituted by these patterns and the like are affected by the stacking shift, and for example, their characteristics are changed for each lot of the stack. . Such a problem also occurs due to slight variations in the thickness of the dielectric layer for each lot, which may occur due to the manufacturing process of the dielectric layer. In such a case, particularly, the level (value) of the monitor signal extracted from one end of the coupling line of the coupler varies from lot to lot. For example, if the thickness of the dielectric layer on which the main transmission line and the coupling line forming the coupler are different, the inductance and the reactance change, and the values of the monitor signals are different, and the same automatic gain is obtained between the modules. Control becomes difficult to realize.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and makes it possible to keep the value of a monitor constant irrespective of, for example, the misalignment of a dielectric layer or the state of a laminate caused by a manufacturing stage. It is to provide a high-frequency module to obtain.

[0008]

According to the first aspect of the present invention,
A high-frequency switch for switching between a transmission system and a reception system of each transmission / reception system separated from a plurality of transmission / reception systems having different pass bands, and a coupler for monitoring an output from an amplifier that amplifies a transmission signal at a pass frequency in each transmission system. In a high-frequency module integrated in a laminate including a plurality of dielectric layers, a terminating resistor connected to one end of the coupling line of the coupler is arranged in the uppermost dielectric layer, and its resistance can be changed. It is characterized by having comprised in.

According to this configuration, a plurality of transmission / reception systems having different pass bands are separated into each transmission / reception system, and each of the transmission system and the reception system is switched by the high frequency switch. By arranging the terminating resistor on the uppermost dielectric layer and making it variable, it is possible to adjust the resistance value of the terminating resistor according to each laminated body. Here, the uppermost dielectric layer literally means, for example, the first dielectric layer in addition to the uppermost dielectric layer.
Even in the case where the cavity or the like is formed in the upper dielectric layer even if the layer is the lower layer, the portion is also exposed upward,
This configuration is substantially the same in that the structure is easily adjusted even after the high-frequency module is manufactured.

According to a second aspect of the present invention, the terminating resistor is a chip component that is a trimmable resistor. According to this configuration, by adjusting the trimmable resistor with a dedicated jig, the variation in the lamination of the substrates is affected. And the monitor value becomes constant.

According to a third aspect of the present invention, the terminating resistor is an electrode pattern formed on the surface of the dielectric layer. According to this configuration, the electrode pattern is adjusted by laser trimming or the like, so that the dielectric material is adjusted. The value of the monitor is constant without being affected by the variation of the stacking.

[0012]

FIG. 1 is a circuit diagram showing one embodiment of a high-frequency module according to the present invention. This high frequency module is a DCS system (1800MHz band) transmission / reception system and GSM
And a transmission / reception system of a system (900 MHz band). Both signals are separated in a circuit by a demultiplexing circuit DIP10. The antenna ANT is connected to the switch circuits SW10 and SW20 via the branch circuit DIP10. That is, the DCS reception signal received from the antenna ANT is guided to the transmission / reception system on the DCS side via the demultiplexer DIP10,
The GSM received signal passes through the demultiplexer DIP10 to GS
It is guided to the transmission / reception system on the M side.

The circuit configuration on the DCS side will be described.
The switch circuit SW10 switches between the reception circuit Rx and the transmission circuit Tx. For switching between transmission and reception, for example, a time division system is adopted. The transmitting circuit Tx has an amplifier MMI
C and two-stage matching circuits MAT10 and MAT30. The second-stage matching circuit MAT10 is directly connected to the coupler COP10. Two-stage matching circuit MAT10, MA
T30 forms a low-pass filter including the transmission line STLD4 and the capacitor CD4 and the transmission line STLD5 and the capacitor CD5, and performs impedance matching between the output impedance of the amplifier MMIC (about several Ω) and the input impedance of the coupler COP10 (around 50Ω). At the same time, harmonic components are suppressed.

The coupler COP10 forms a low-pass filter including the transmission line STLD2 and the capacitor CD9. Further, the coupling line STLD20 is connected to the transmission line STLD.
By forming, for example, capacitive coupling close to the LD2, a part of the output from the amplifier MMIC on the transmission circuit Tx side is extracted and fed back to the DCS Monitor as a monitor level. A terminating resistor RD2 is connected to the switch circuit SW10 which is a part of the coupling line STLD20.

Coupler COP10 and switch circuit SW10
Is connected via a DC component cutting capacitor CD7, and the capacitor CD7 is connected to the anode of the PIN diode DD1. In addition, PIN diode DD
1 has an inductor LD3 and a capacitor CD.
3 and the inductor LD3 and the capacitor C
The connection point with D3 is connected to the control terminal Vc on the DCS side via the control resistor RD1.

The cathode of the PIN diode DD1 is connected to the high-pass filter HPF10 of the branching circuit DIP10 via a DC component cutting capacitor CD6, and the DCS is connected via a transmission line STLD3 and a DC component cutting capacitor CD8. Side Rx terminal. The connection point between the transmission line STLD3 and the capacitor CD8 is connected to the anode of the PIN diode DD2, and the cathode of the PIN diode DD2 is connected to the capacitor C
It is grounded via a parallel resonance circuit composed of D2 and inductor LD2. Capacitor CD2 and inductor L
The parallel resonance circuit formed with D2 separates the transmission circuit Tx and the reception circuit Rx on the DCS side.

The branching circuit DIP10 comprises, for example, a high-pass filter HPF10, a capacitor CD1 and an inductor LD1. High pass filter HP
F10 is connected to both ends of the capacitor interposed in the signal line,
It consists of two parallel transmission lines to ground and capacitors connected in parallel to them.

Next, the circuit configuration on the GSM side will be described. The switch circuit SW20 switches between the receiving circuit Rx and the transmitting circuit Tx. For switching between transmission and reception, for example, a time division system is adopted. The transmitting circuit Tx side includes an amplifier MMIC and two-stage matching circuits MAT20 and MAT40. The second-stage matching circuit MAT20 is a coupler COP.
20 is directly connected. Two-stage matching circuit MAT2
0, MAT40 is the transmission line STLG4 and the capacitor CG
4. A low-pass filter including the transmission line STLG5 and the capacitor CG5 is configured to perform impedance matching between the output impedance of the amplifier MMIC (approximately several Ω) and the input impedance of the coupler COP20 (around 50Ω). We are controlling.

The coupler COP20 forms a low-pass filter including the transmission line STLG2 and the capacitor CG9. Further, the coupling line STLG20 is connected to the transmission line STLG.
By forming, for example, capacitive coupling close to LG2, a part of the output from the amplifier MMIC on the transmission circuit Tx side is extracted and fed back to the GSM Monitor as a monitor level. Switch circuit SW2 of coupling line STLG20
The 0 side is terminated by a terminating resistor RG2.

The coupler COP20 and the switch circuit SW20
Is connected via a DC component cutting capacitor CG7, and the capacitor CG7 is connected to the anode of the PIN diode DG1. Also, PIN diode DG
1 has an inductor LG3 and a capacitor CG
3 and the inductor LG3 and the capacitor C
A connection point with G3 is connected to a control terminal Vc on the GSM side via a control resistor RG1.

The cathode of the PIN diode DG1 is connected to the low-pass filter LPF10 of the branching circuit DIP10 via a DC component cutting capacitor CG6, and GSM via a transmission line STLG3 and a DC component cutting capacitor CG8. Side Rx terminal. The connection point between the transmission line STLG3 and the capacitor CG8 is connected to the anode of the PIN diode DG2, and the cathode of the PIN diode DG2 is connected to the capacitor C
It is grounded via a parallel resonance circuit consisting of G2 and inductor LG2. Capacitor CG2 and inductor L
The parallel resonance circuit formed by G2 and G2 separates the transmission circuit Tx and the reception circuit Rx on the GSM side.

The branching circuit DIP10 is composed of, for example, a low-pass filter LPF10, a capacitor CG1 and an inductor LG1. Low-pass filter LP
F10 is composed of a parallel circuit of a transmission line and a capacitor interposed in the signal line, and three capacitors interposed between both ends of the transmission line and three places at the center and ground.

In this high-frequency module, the demultiplexing circuit DIP
10, switch circuits SW10, SW20, coupler COP
10, the COP 20, and at least a part of the matching circuits MAT10, MAT20 are arranged in the module. In the present embodiment, the transmission lines forming the high-pass filter HPF10 and the low-pass filter LPF10 forming the branching circuit DIP10, the transmission lines STLD3 and STLG3 forming the switch circuits SW10 and 20, and the coupler CO
Transmission lines STLD2, S constituting the P10, COP20
TLG2 and coupled lines STLD20, STLG20
And transmission lines ST forming matching circuits MAT10 and MAT20.
LD4 and STLG4 are formed in a laminate formed by laminating dielectric layers as electrode patterns. Further, a demultiplexing circuit DIP10, switch circuits SW10 and SW20, couplers COP10 and COP20, matching circuits MAT10 and MA
A chip element such as a PIN diode that constitutes a part of each of the T20s is mounted on the uppermost dielectric layer. That is, in the present embodiment, in FIG. 1, elements shown by thick lines are formed as built-in patterns of the dielectric layer, elements surrounded by circles are formed as built-in patterns or surface-mounted components, and other It is configured as a mounted component.

FIG. 2 is a partially cutaway perspective view of the high-frequency module according to the present invention. As shown in FIG. 2, this high-frequency module 1 is formed by laminating eight dielectric layers 11, 12,... 18 of the same dimensions and made of ceramic or the like, and the upper and side surfaces are covered with a shield cover 10 made of metal. Further, a required number of end face electrodes formed as necessary are formed at appropriate places on the side faces so as to extend from the top face to the bottom face. The conductive pattern on the upper surface of the uppermost dielectric layer 11 is partially omitted in the drawing.

Each of the dielectric layers 11 to 18 is formed by applying a conductive paste or the like to the surface of a ceramic in the form of a green sheet to form a pattern constituting each of the above-described circuits. It was pressed and fired. In each dielectric layer, via holes necessary for configuring or connecting a circuit are appropriately formed over a plurality of layers. In addition to various patterns, trimmable resistors 21 and 22 corresponding to the terminating resistors RD2 and RG2, and other chip components are mounted on the uppermost dielectric layer 11 (in the drawing, the terminating resistor RG2 is attached to the terminating resistor RG2). The corresponding trimmable resistor 22 is not visible).

FIG. 3 is a schematic vertical sectional view of the high-frequency module 1 shown in FIG. 2 taken along a plane including the terminating resistors RD2 and RG2. In FIG. 3, a thick line in a vertical direction is a via hole, and a thick line in a horizontal direction indicates a pattern formed on the dielectric layer. Square objects shown on the upper surface of the dielectric layer 11 schematically show a state in which chip components such as diodes, capacitors, inductors, and the like are mounted. Coupler CO
Transmission lines STLD2, S constituting the P10, COP20
The TLG 2 and the coupling lines STLD20 and STLG20 are formed on the upper surface of the fifth layer (or the lower surface of the fourth layer), and the present embodiment shows a case where coupling is performed at the edges of both lines. The terminating resistors RD2 and RG2 are respectively connected to the ends of the coupling lines STLD20 and STLG20 via the via holes extending from the coupling lines STLD20 and STLG20 to the upper surface of the dielectric layer 11 and to the ends of the switch circuits SW10 and SW20. I have. As the terminating resistors RD2 and RG2, the trimmable resistors 21 and 2 having a structure in which the resistance value can be adjusted by a dedicated jig or the like are used.
DCS Monitor and GSM Mo
The monitor signal value at the nitor terminal can be changed and adjusted. The trimmable resistors 21 and 22 are connected to the dielectric layer 11.
Are arranged in the vicinity of the opposite corners of each other so as to minimize the influence of interference due to different frequencies as much as possible.

The adjustment of the resistance values of the trimmable resistors 21 and 22 is performed in an inspection process after laminating and manufacturing the respective dielectric layers and mounting chip components to form a high-frequency module. Therefore, it is preferable that the trimmable resistors 21 and 22 be mounted on the uppermost dielectric layer 11 in order to realize easy adjustment. In the inspection process, a test transmission signal of a predetermined level is input from each of the amplifiers MMIC, and the value (level) of the monitor signal from the coupler COP10, COP20 at this time is detected so that this value becomes a predetermined value. Trimmable resistors 21 and 22 with special jig
The resistance value is varied. As the trimmable resistor, a resistor adjustable in a range of a value slightly larger than 0Ω to 50Ω is employed.

FIG. 4 is a partially cutaway perspective view showing another embodiment of FIG. 2, which is a conductive pattern showing a predetermined resistance value in place of the trimming resistors 21 and 22 for the terminating resistors RD2 and RG2. The electrode pattern 12 having a predetermined shape, for example, an H shape
1 and 122 (the electrode pattern 122 corresponding to the terminating resistor RG2 is not visible in the drawing). FIG. 5 is a schematic vertical sectional view taken along a plane including the terminating resistors RD2 and RG2 in another embodiment shown in FIG. The adjustment of the resistance values of the electrode patterns 121 and 122 is performed in an inspection process after laminating and manufacturing substrates of each layer made of a dielectric material and mounting chip components to form a high-frequency module. In the inspection process, a test transmission signal of a predetermined level is input from each of the amplifiers MMIC, and the value (level) of the monitor signal from the coupler COP10, COP20 at this time is detected so that this value becomes a predetermined value. The electrode pattern 121,
The linear portion 12 connecting the electrode portions (lands) on both sides of the
The resistance value may be increased and adjusted by cutting the pattern 1a (see FIG. 4). Therefore, the termination resistance RD
2. The electrode patterns 121 and 122 as RG2 are 50
Preferably, it is formed to have a resistance value slightly smaller than Ω. As a material of the conductive pattern exhibiting a predetermined resistance value, silver or copper which can be fired simultaneously with the conductive pattern at the time of manufacturing the laminate can be adopted. As shown in FIGS. 2 and 4, in the case where the cavity is formed at an appropriate position of the dielectric layer plate 11 (or a dielectric layer therebelow may be further included), it is exposed on the upper surface. The terminating resistors RD2 and RG2 may be provided exposed on the upper surface of the dielectric layer, and the adjustment operation is similarly easy in such a configuration.

As described above, if the circuit is a single-coupler circuit,
Although the value of the terminating resistor can be set to 50Ω, the impedance when the transmission side is viewed from the coupler is not always 50Ω due to the connection of the switch SW and the following reason. For example, if stacking misalignment occurs between a plurality of dielectric layers, the arrangement of conductive patterns will be misaligned when a circuit is composed of a plurality of patterns in different layers. In particular, the thickness variation due to the thermocompression work of the dielectric layer, the variation in the pattern shape due to the minute difference in the material mixing ratio of the conductive paste for the conductive pattern, and the like easily occur in each lot. Needs to be adjusted in consideration of these variable factors. Also,
When the resistance values of the trimmable resistors 21 and 22 are adjusted for each of the module substrates manufactured under the same conditions, and the trimming shapes of the electrode patterns 121 and 122 are determined, the high-frequency devices manufactured on the same type of module substrate are determined. For the module, the adjustment result of such a representative module substrate can be applied as it is, so that the subsequent adjustment work becomes easier, and the thickness is deviated from the expected dimensions, and it is sorted into the best product. Even if there is no substrate, there is an advantage that it can be used as an appropriate substrate by adjusting the terminating resistance.

In each of the above embodiments, the case where the coupling is performed at the edge of the line has been described. However, in the dielectric layer, the main transmission lines STLD2 and STLG2 are connected to the upper dielectric layer, and the coupling lines STLD20 and STLD20 are connected. STLG20 1
The main transmission lines STLD2 and STLG2 are arranged in the lower dielectric layer, and conversely, the coupling lines STLD20 and STLG20 are arranged in the lower dielectric layer by one or the required stage. It goes without saying that the same is true even if coupling is performed. Further, the trimming of the electrode patterns 121 and 122 is not limited to laser, but may be performed by another cutting means such as a wafer saw.

In the above-described high-frequency module comprising a laminated body having a plurality of dielectric layers and forming a high-frequency switch and a coupler in or on the laminated body, the value of the monitor may be changed due to the misalignment of the dielectric layers. For each individual product,
Even when the monitor values vary from module module lot to lot, the monitor values can be adjusted by providing the trimmable resistors 21 and 22 or the adjustable electrode patterns 121 and 122 on the substrate surface as the terminating resistors. Can always be kept constant.

[0032]

According to the present invention, in a high-frequency module in which a high-frequency switch and a coupler are integrated in a laminated body having a plurality of dielectric layers, the terminating resistor of the coupler can be changed to the uppermost dielectric layer. The resistance value can be easily variably adjusted and the monitor value can be kept constant even when the monitor value varies due to the influence of stacking deviation.

In addition, since a trimmable resistor and an electrode pattern are provided as the terminating resistor, the resistance value can be easily variably adjusted.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing one embodiment of a high-frequency module according to the present invention.

FIG. 2 is a partially cutaway perspective view of the high-frequency module according to the present invention.

FIG. 3 is a schematic vertical sectional view of the high-frequency module shown in FIG. 2 taken along a plane including a terminating resistor.

FIG. 4 is a partially cutaway perspective view showing another embodiment of FIG. 2;

FIG. 5 is a schematic vertical sectional view taken along a plane including a terminating resistor in another embodiment shown in FIG. 4;

FIG. 6 is a block diagram showing a current high-frequency module.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 High frequency module DIP10 Demultiplexing circuit SW10,20 Switch circuit COP1, COP2 Coupler MAT10,20,30,40 Matching circuit MMIC amplifier STLD2, STLG2 Transmission line STLD20, STLG20 Coupling line RD2, RG2 Terminating resistor (Terminal resistor) 21,22 Trimmable resistor (terminating resistor) 121, 122 Electrode pattern (terminating resistor) 11-18 Dielectric layer

Claims (3)

[Claims] 1. A high-frequency switch for switching between a transmission system and a reception system of each transmission / reception system separated from a plurality of transmission / reception systems having different pass bands, and an output from an amplifier for amplifying a transmission signal at a pass frequency in each transmission system. In a high-frequency module in which a coupler for monitoring is coupled to a laminate including a plurality of dielectric layers, a terminating resistor connected to one end of a coupling line of the coupler is arranged in a top dielectric layer, and A high-frequency module characterized in that a resistance value can be changed. 2. The high-frequency module according to claim 1, wherein the terminating resistor is a trimmable resistor. 3. The device according to claim 1, wherein the terminating resistor is an electrode pattern formed on a surface of the dielectric layer.
The high-frequency module as described.