JP2002268576A - Image display device, manufacturing method for the device and image display driver ic - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an image display device in which unwanted radiation is reduced and the number of terminals of a data signal input terminal is also reduced, to provide a manufacturing method for the device and to provide an image display driver IC. SOLUTION: In the image display device, signals are transmitted to an image display device IC3 from a peripheral substrate 5 and an image is displayed by driving a plurality of transistors arranged in a matrix manner by the IC3. A light emitting element 7 is provided on the substrate 5 to transmit optical signals. A light receiving element 8 is provided on the IC3 to receive the optical signals. A portion of the IC3, a portion of the transistors arranged in a matrix manner and a portion of the element 8 are simultaneously formed in the same process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an image display device, a method of manufacturing the image display device, and an image display driver IC.

[0002]

2. Description of the Related Art An example of a liquid crystal display device which is the most general image display device will be described. In an active matrix liquid crystal display device, an image display unit in which a plurality of pixels are arranged in a matrix is provided. The image display unit is 2
It is formed of a single substrate and liquid crystal sealed between the substrates. In order to generate an electric field in the liquid crystal for each pixel, a pixel electrode corresponding to each pixel is formed on one substrate, and a counter electrode is formed on the other substrate so as to face each pixel electrode.

A plurality of scanning signal lines for driving each pixel and data signal lines are provided on a substrate on which pixel electrodes are formed so as to cross each other. Further, a thin film transistor (hereinafter, referred to as a “TFT”) having a function of switching a pixel electrode is formed at each intersection of a scanning signal line and a data signal line on the substrate on which the pixel electrode is formed. Hereinafter, the substrate on which the pixel electrodes are formed is referred to as “array substrate”, and the substrate on which the counter electrodes are formed is referred to as “counter substrate”.

In each pixel, a scanning signal is applied to a scanning signal line by an image signal, and a TFT is turned on by the scanning signal.
N / OFF control is performed. Further, a data signal is applied to the data signal line by the image signal. That is, turning on the TFT
The liquid crystal is controlled for each pixel by the scanning signal and the data signal for performing the / OFF control, whereby each pixel is turned on, and as a result, an image is displayed on the image display unit.

Further, the liquid crystal display device is provided with a scanning driver for driving the scanning signal lines and a data driver for driving the data signal lines. Each of these drivers is constituted by an IC, and has a driving circuit for driving the TFT. It should be noted that, hereinafter, I
C and the IC constituting the data driver are collectively referred to as “image display driver IC”.

As a method for connecting the image display driver IC and the image display unit, a TAB (Tape Automated) shown in FIG.
ated bonding) and COG (Chip On Gl
ass) method is known.

FIG. 17 shows a case where the image display driver IC is TAB.
FIG. 3 is a diagram showing a conventional liquid crystal display device connected by a method. In FIG. 17, 1 is an array substrate, 2 is a counter substrate, and 3 is an image display driver IC. Liquid crystal (not shown) is sealed between the array substrate 1 and the opposing substrate 2, and a portion of the array substrate 1 enclosing the liquid crystal, the liquid crystal, and the opposing substrate 2 is displayed on a screen. Department.

As shown in FIG. 17, in connection by the TAB method, a TCP (Tape Carrier Packa) formed by bonding an image display driver IC 3 to a flexible tape is used.
ge) 4 is used. The TCP 4 is electrically connected to the connection portions 1 a to 1 e provided near the outer periphery of the array substrate 1 by thermocompression. Reference numeral 5 denotes a peripheral substrate.

FIG. 18 shows that the image display driver IC is COG
FIG. 3 is a diagram showing a conventional liquid crystal display device connected by a method. In addition, among the reference numerals used in FIG.
7 are the same as those in FIG.

As shown in FIG. 18, in connection by the COG method, the image display driver IC 3 is directly mounted near the outer periphery of the glass substrate 1. Each terminal of the image display driver IC is electrically connected to a scanning signal line or a data signal line by a conductive paste. Reference numeral 6 denotes a connector for connecting the peripheral substrate 5 and the image display driver IC 3,
It is formed by a flexible tape.

In recent years, liquid crystal display devices for personal computers have become more multicolored and have higher resolution in order to represent images close to natural images, and the number of input data bits tends to increase. Therefore, the number of input terminals of the image display driver IC 3 connected to the peripheral substrate 5 also tends to increase.

[0012]

However, when the number of input terminals increases, the pitch between the input terminals decreases, so that the connection between the input terminals and the peripheral substrate 5 becomes more difficult. Also,
Accuracy is required for alignment between each input terminal and a connection line from the peripheral board 5. Further, in the case of mechanical connection, connection failures due to mechanical stress increase.

Since the frequency of the input signal tends to increase due to the increase in the number of colors and the increase in resolution, noise is mainly transmitted from the flexible tape connecting the peripheral substrate 5 and the image display driver IC 3 to other devices. Radiated problem (EM
I) and the problem that other devices pick up noise components (E
MS) is increasing.

SUMMARY OF THE INVENTION The present invention has been made in view of the foregoing problems, and has been made in view of the above circumstances, and is capable of reducing unnecessary radiation and reducing the number of data signal input terminals, a method of manufacturing the same, and an image display driver IC. The purpose is to provide.

[0015]

In order to achieve the above object, a first image display device of the present invention transmits a signal from a peripheral circuit to a driving circuit, and a plurality of signals are arranged in a matrix by the driving circuit. An image display device that displays an image by driving a transistor of the image display device, wherein the peripheral circuit is configured to transmit the signal as an optical signal, and the driving circuit receives the optical signal. Characterized in that the light-receiving element is provided.

In the first image display device, a part of at least one of the drive circuit and the transistor and a part or all of the light receiving element can be formed by the same process. Specifically, when the light receiving element and the transistor are formed on the same substrate by providing at least an insulating film, an impurity implantation region, and an electrode,
The electrode of the light receiving element and the electrode of the transistor, part or all of the impurity implantation region of the light receiving element and part or all of the impurity implantation region of the transistor, or the insulating film of the light receiving element and The insulating film of the transistor can be formed in the same step.

Further, the first image display device may include a solar cell. In this case, a part of the drive circuit, a part of the transistor, a part or all of the light receiving element, Some or all of the solar cells can be formed by the same process.

In the first image display device, the driving circuit has a light emitting element for transmitting an optical signal to the peripheral circuit, and the peripheral circuit has a light receiving element for receiving an optical signal from the driving circuit. An embodiment having an element can be employed. In this case, the optical signal transmitted from the driving circuit is
It may include at least one of tablet position information, signal synchronization information, and peripheral luminance information.

Further, in this aspect, at least a part of at least one of the drive circuit and the transistor,
Some or all of the light emitting elements can be formed by the same process. Specifically, when the light emitting element and the transistor are formed over the same substrate by providing at least an insulating film, an impurity implantation region and an electrode, the electrode of the light emitting element and the electrode of the transistor Or the insulating film of the light emitting element and the insulating film of the transistor can be formed in the same step.

Further, in this aspect, a part of the driving circuit, a part of the transistor, a part or all of the light receiving element, and a part or all of the light emitting element are formed by the same process. it can.

Also in this embodiment, the first image display device may include a solar cell, and may include a part of the driving circuit, a part of the transistor, and a part or all of the light emitting element. And part or all of the solar cell can be formed by the same process. In this case, part or all of the light receiving element can be formed by the same process.

In the first image display device, it is preferable that the optical signal is modulated light. It is preferable that the peripheral circuit and the transistor are formed on separate substrates, respectively, and the substrate on which the peripheral circuit is formed and the substrate on which the transistor is formed are fixed.

In order to achieve the above object, a second aspect of the present invention is provided.
An image display device is an image display device that transmits a signal from a peripheral circuit to a drive circuit, and drives the plurality of transistors arranged in a matrix by the drive circuit to display an image, wherein the peripheral circuit includes: The signal is configured to be transmitted as a radio signal, and the driving circuit includes:
It has a receiving element for receiving the radio signal.

In the second image display device, the driving circuit has a transmitting element for transmitting a radio signal to the peripheral circuit, and the peripheral circuit has a receiving element for receiving a radio signal from the driving circuit. An embodiment having an element can be employed. In this aspect, the radio signal transmitted from the driving circuit can include at least one of tablet position information, signal synchronization information, and peripheral luminance information.

In the second image display device, the portion including the drive circuit and the transistor is detachable from the portion including the peripheral circuit, and is separated from the portion including the peripheral circuit. It can be configured to display images. In this case, it is preferable that a power supply for displaying an image is provided in a portion including the driving circuit and the transistor. A solar cell can be used as the power supply, and the solar cell can be provided over a substrate provided with the transistor.

The first and second image display devices can be used as any one of a liquid crystal display device, an EL display device, and a field emission display device.

In order to achieve the above object, a method of manufacturing an image display device according to the present invention is characterized in that a peripheral circuit transmits an optical signal to a driving circuit, and the driving circuit receives the optical signal by a light receiving element and forms a matrix. A method for manufacturing an image display device that displays an image by driving a plurality of transistors disposed in a part of at least one of the drive circuit and the transistor, and part or all of the light receiving element. Are formed at least simultaneously.

In the above method for manufacturing an image display device, the light receiving element and the transistor may be formed on the same substrate.
When at least an insulating film, an impurity-implanted region, and an electrode are provided, the electrode of the light-receiving element and the electrode of the transistor are partially and entirely connected to the impurity-implanted region of the light-receiving element and the impurity implanted in the transistor. Part or all of the region, or the insulating film of the light receiving element and the insulating film of the transistor can be formed simultaneously.

In the method of manufacturing an image display device, the driving circuit may include a light emitting element for transmitting an optical signal including at least one of tablet position information, signal synchronization information, and peripheral luminance information to the peripheral circuit. When the peripheral circuit has a light receiving element for receiving an optical signal including at least one of the tablet position information, signal synchronization information and peripheral luminance information, the drive circuit and the transistor At least one of the
Some or all of the light emitting elements can be formed simultaneously.

In this case, if the light emitting element and the transistor are formed on the same substrate with at least an insulating film, an impurity implantation region and an electrode provided, the electrode of the light emitting element and the electrode of the transistor are formed. Or the insulating film of the light emitting element and the insulating film of the transistor can be formed simultaneously.

In order to achieve the above object, a first image display driver IC according to the present invention has a light receiving element for converting an input optical signal into an electric signal.
In the first image display driver, it is preferable that the light receiving element is monolithically formed on a silicon substrate constituting the image display driver IC. Also,
Preferably, the light receiving element is a photodiode or a phototransistor.

In order to achieve the above object, the second image display driver IC according to the present invention is characterized in that it has a light emitting element for converting an input electric signal into an optical signal. In the second image display driver IC, it is preferable that the light emitting element is monolithically formed on a silicon substrate constituting the image display driver IC. Preferably, the light emitting element is an LED or a laser.

Further, in order to achieve the above object, the third image display driver IC according to the present invention is characterized by including a solar cell.

In order to achieve the above object, a fourth image display driver IC according to the present invention comprises an element for receiving a radio wave and converting it into an electric signal, and an element for converting an electric signal into a radio wave and transmitting it. Characterized by having at least one of the following.

Further, in order to achieve the above object, a fifth image display driver IC according to the present invention comprises an element for receiving a magnetic signal and converting it to an electric signal, and a device for converting an electric signal to a magnetic signal. It has at least one of the transmitting elements.

[0036]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an image display device, a method of manufacturing an image display device, and an image display driver IC according to the present invention
An embodiment will be described. An image display device according to the present invention inputs a signal from a peripheral circuit to an image display driver IC, and drives a TFT provided on an array substrate by a drive circuit of the image display driver IC to display an image. .

The image display device according to the present invention can be used as a liquid crystal display device, an EL (Electro Luminescent) display device, a field emission display device and the like. Whether the image display device according to the present invention is used as any of the above image display devices is basically determined by the structure of a portion above the array substrate (that is, a portion on the image display side). The same applies when used as any of the above image display devices.

(Embodiment 1) Next, an image display device, a method of manufacturing the same, and an image display driver IC according to Embodiment 1 of the present invention will be described with reference to FIGS. 1 to 6 and FIG. FIGS. 1 to 6 show an example in which the image display device according to the first embodiment is a liquid crystal display device.
FIG. 14 shows an example in which the image display device according to the first embodiment is an EL display device.

FIG. 1 is a side view of the image display device according to the first embodiment. FIG. 2 is a diagram illustrating an upper surface of the image display device according to the first embodiment.

As shown in FIG. 1, an image display driver IC 3 including a drive circuit is mounted on the array substrate 1 by COG. The drive circuit can be formed on a glass substrate for forming the array substrate 1 together with the TFTs constituting the array substrate 1 as described later.

A peripheral circuit (not shown) for sending a signal to the image display driver IC 3 is provided on a peripheral substrate 5 separate from the array substrate 1 and the counter substrate 2. From the peripheral circuit provided on the peripheral substrate 5, an image signal for driving the TFT formed on the array substrate 1 and an image signal for controlling the TFT formed on the array substrate 1 are supplied to the array substrate 1. Signals such as control signals and driving power are transmitted.

In the first embodiment, the light emitting element 7 is provided on the peripheral substrate 5 and the image display driver IC 3
Has a light receiving element 8. Therefore, the peripheral circuit can convert the signal into an optical signal and transmit the optical signal to the image display driver IC 3, and the image display driver IC 3 can receive the optical signal transmitted from the light emitting element 7.

In the first embodiment, image signals and control signals are transmitted as optical signals.
The driving power is supplied to the peripheral substrate 5 via a flexible substrate or the like.
To the power supply wiring on the array substrate 1. The light emitting element 7 and the light receiving element 8 are positioned so that an optical signal can be transmitted from the light emitting element 7 to the light receiving element 8.

By the way, in order to transmit a signal from a peripheral circuit, a large number of signal transmission paths corresponding to the number of data bits are usually required. However, in the image display device according to the present embodiment, a parallel-serial conversion circuit (not shown) is provided on the peripheral substrate 5, and a serial-parallel conversion circuit (not shown) is provided in the image display driver IC3. I have. Modulated light is used for optical transmission. Therefore, as shown in FIG. 2, the number of light emitting elements 7 and light receiving elements 8 may be significantly smaller than the number of data bits.

As shown in FIG. 2, in the image display device according to the present embodiment, a total of five image display driver ICs 3 are installed around the opposing substrate 2, and each image display driver IC 3 receives light. The elements 8 are provided one by one. Each image display driver IC3 receives an image signal and a control signal corresponding to a signal line to be driven.

In the first embodiment, a part of the image display driver 3 or one image display driver IC 3
The light receiving element 8 may be formed only in the light receiving element. In this case, the image signal and the control signal corresponding to the signal lines driven by all or a plurality of the image display driver ICs 3 can be collectively received by one light receiving element 8, and the image display driver IC 3 without the light receiving element 8 is formed. It is possible to adopt a configuration for transmitting a signal to the device.

Normally, the image display driver IC 3
The silicon substrate is mounted such that the surface on which the transistors and the like are formed does not face the array substrate. However, in the example shown in FIGS. 1 and 2, the light receiving element 8 is formed on the surface of the silicon substrate on which the transistor and the like are formed, and the light receiving element 8 needs to receive an optical signal. The display driver IC 3 is mounted such that the surface on which the transistors and the like and the light receiving elements 8 are formed faces the array substrate 1.

For this reason, the peripheral substrate 5 is provided under the array substrate 1.
Can be installed to perform optical transmission and reception, and the device configuration is simplified. The array substrate 1 and the peripheral substrate 5 are adhered by an adhesive. This is to prevent the positional shift between the light receiving element 8 and the light emitting element 7 and to realize stable optical transmission / reception even when an external force is applied.

As described above, in the first embodiment,
Only the power supply line needs to be electrically connected between the peripheral substrate 5 and the array substrate 1, and the number of connection points between the peripheral substrate 5 and the array substrate 1 can be greatly reduced.

Therefore, by using the image display device and the image display driver IC according to the first embodiment, the connection reliability and the yield can be improved, and the return rate can be reduced. In addition, cost can be reduced by simplifying the connection, and unnecessary radiation (EM
S, EMI) can be reduced, so that image quality can be stabilized and adverse effects on other devices can be reduced.

In the first embodiment, as the light receiving element 8, a single light receiving element manufactured separately from the image display driver IC 3 and the array substrate 1 can be used. In this case, the light receiving element 8 may be mounted on the array substrate 1 separately from the image display driver IC 3 or may be packaged together with the image display driver IC 3. In the latter case,
One IC package is formed by the image display driver IC 3 and the light receiving element 8.

However, from the viewpoint of reducing the number of components mounted on the COG, the light receiving element 8 is formed (monolithically formed) together with the transistors constituting the pixel driver IC 3 on a silicon substrate for forming the pixel driver IC 3. It is also preferable to form them together with TFTs on a glass substrate for forming the array substrate 1.

In the former case, since one IC chip is formed by the light receiving element 8 and the transistor constituting the image display driver IC 3, the number of components mounted by COG can be reduced. In the latter case, if a driving circuit is formed on a glass substrate for forming the array substrate 1, all of the driving circuit, the light receiving element 8, and the TFT can be formed on the same substrate, so that COG mounting is performed. The number of parts can be further reduced.

FIG. 3 is a sectional view showing an example of the light receiving element. The light receiving element shown in FIG. 3 is formed separately from the image display driver IC and the array substrate. A light receiving element and a method for forming the same will be described with reference to FIG.

First, an n-layer 13 is formed by doping phosphorus from the surface (upper surface in the figure) of the p-type silicon substrate 11. In addition, a p + layer (not shown) is formed by doping boron on the back surface (the lower surface in the figure). An ion doping apparatus is used for doping.

Next, the p-type silicon substrate 11
Annealing is performed at 0 ° C. to form an SOG film as an antireflection film 9 on the surface of the p-type silicon substrate 11. Then, n
The electrode 10 is formed. The formation of the n-electrode 10 is performed by removing a part of the antireflection film 9 by photolithography etching, forming an aluminum film thereon by a sputtering device, and performing photolithography etching.

Next, an aluminum electrode 12 is formed on the back surface of the p-type silicon substrate 11 by a sputtering device. Through the above steps, the light receiving element shown in FIG. 3 is completed. FIG.
Is a photodiode.

FIG. 4 shows a case where the light receiving element is an image display driver IC.
FIG. 4 is a cross-sectional view illustrating an example formed on a substrate of FIG. With reference to FIG. 4, the light-receiving element and the transistors constituting the image display driver IC, and their manufacturing steps will be described.

First, the transistor will be described. As shown in FIG. 4, first, a resist pattern is formed by photolithography on a p-type silicon substrate 40, and phosphorus is implanted by ion doping into a portion where the resist pattern is not formed, so that a low-concentration implantation region serving as an impurity implantation region (N−) 45 is formed.

Next, annealing is performed in water vapor to form a thermal oxide film (gate oxide film) 49. Further, photolithography and etching are performed to remove the thermal oxide film other than the portion where the gate electrode 48 is formed and the gate electrode wiring. Next, a gate electrode 48 is formed by photolithography and CVD.

Thereafter, a resist pattern is formed by photolithography, phosphorus is implanted by ion doping, and a high concentration implantation region (n
+) 44 are formed. Next, after the portion of the separation layer is etched by photolithography and etching, T
Silicon oxide film (SiO ₂ film) 42 by EOS-CVD
Is formed.

Next, a contact hole is formed by photolithography and etching. Further, a titanium film and an aluminum film serving as electrodes are formed, and the titanium film and the aluminum film other than portions serving as the source electrode 43a, the drain electrode 43b, and the source / drain electrode wiring are removed by photolithography and etching. As a result, transistors constituting the image display driver IC are completed.

Next, the light receiving element will be described. First, as shown in FIG. 4, an n-type amorphous silicon film 41 having a thickness of 70 nm is formed on a p-type silicon substrate 40. The n-type amorphous silicon film 41 is formed by a plasma CVD method. However, as the source gas, a mixed gas obtained by mixing phosphine with silane, which is a normal source gas, is used.

Next, after a resist pattern is formed by photolithography, boron is implanted by ion doping to form a p region 46. The ion doping is performed at a high accelerating voltage, here, 70 keV. Thereafter, boron is implanted again by ion doping, and the p + region 4 is formed near the surface of the amorphous silicon film 41.
7 is formed. In this case, the ion doping is performed at a low acceleration voltage, here, 10 keV.

Thereafter, a resist pattern is formed by photolithography, phosphorus is implanted by ion doping, and a high-concentration implantation region (n
+) 44 are formed.

Next, a silicon oxide film 42 is formed by the TEOS-CVD method. Further, a contact hole is formed by photolithography and etching. Further, a titanium film and an aluminum film serving as electrodes are formed, and the anode electrode 43 is formed by photolithography and etching.
c, The titanium film and the aluminum film other than the portion serving as the cathode electrode 43d and the wiring are removed. Thus, the light receiving element (PN type photodiode) is completed.

As described above, in the example of FIG. 4, the transistor and the light receiving element are formed on the same p-type silicon substrate 40. In FIG. 4, the high-concentration injection region (n +) 4
4. The formation of the silicon oxide film 42 and the electrodes (43a to 43d) are simultaneously performed in the same step in both the transistor and the light receiving element.

For this reason, since the formation of the light receiving element is performed simultaneously with the steps of the normal image display driver IC, it can be said that the number of steps in the manufacture of the image display driver IC does not increase. Further, the connection reliability between the light receiving element and the image display driver IC can be improved. In the first embodiment, a photodiode is formed as a light receiving element, but the light receiving element is not limited to this. In the present invention, the light receiving element is a phototransistor, CC
D, MOS or the like may be used.

Next, an image display unit of the image display device according to the first embodiment will be described. FIG. 5 is a cross-sectional view of the image display device according to the first embodiment, taken along line AA ′ in FIG. Note that FIG. 5 shows only a part of the image display unit. An image display unit of the image display device according to the first embodiment and a manufacturing process thereof will be described with reference to FIG.

First, the array substrate will be described. As shown in FIG. 5, first, for example, TEO is deposited on the glass substrate 14 in order to prevent diffusion of impurities from the glass substrate 14.
A 300 nm-thick silicon oxide film is formed as the base film 15 by the S-CVD method.

Although the glass substrate 14 is used as the substrate in the first embodiment, the present invention is not limited to this, and a plastic substrate or a film substrate can be used.

The thickness of the base film 15 is not limited to 300 nm, and various settings can be made. Further, as the base film 15, a silicon nitride film can be used. The film thickness of the base film 15 may be 200 nm or more in both cases of the silicon oxide film and the silicon nitride film.
If the thickness is 200 nm or less, impurities from the glass substrate 14 diffuse into the silicon layer of the TFT, and a problem such as Vt shift of TFT characteristics occurs.

Next, an amorphous silicon film (not shown) is formed by a plasma CVD method. The amorphous silicon film can be formed by using a low pressure CVD method or a sputtering method. The thickness of the amorphous silicon film is 30 nm to 90 nm.
It is good to set to 70 nm.
Is set to

Next, in order to remove hydrogen in the formed amorphous silicon film, a heat treatment is performed at 450 ° C. for 1 hour as a dehydrogenation step. Note that when a film formation method in which hydrogen is not contained in the amorphous silicon film or the amount of hydrogen is small, such as a sputtering method, a dehydrogenation treatment is not necessary.

Further, the amorphous silicon film is crystallized.
Thus, the amorphous silicon film becomes a polycrystalline silicon film. The crystallization is performed by melting and crystallizing the amorphous silicon film using a laser annealing apparatus. Note that the laser annealing apparatus can move the substrate vertically and horizontally. If the amorphous silicon film is crystallized by irradiating a laser beam, it is necessary to irradiate at an energy density of about 160 mJ / cm ² or more at room temperature.

In the first embodiment, the energy density of the laser light is set to 370 mJ / cm ² using a XeCl pulse laser (wavelength 308 nm). Further, a plurality of pulses are emitted while changing the relative position between the optical axis of the laser beam and the substrate, and further overlapping the laser pulse with the change in the relative position.

Since a large number of dangling bonds are formed in the polycrystalline silicon film, the film is left in a hydrogen plasma, for example, at 450 ° C. for 2 hours as a hydrogenation step. Further, the polycrystalline silicon layer is patterned by photolithography and dry etching. The polycrystalline silicon layer includes an LDD region (low-concentration implantation region) 17 described later,
A source region and a drain region (hereinafter, these are collectively referred to as “source / drain regions”) 16 and a channel region 21.

Next, a silicon oxide film is formed to a necessary thickness, for example, about 100 nm as the gate insulating film 18 by, for example, the TEOS-CVD method. After that, molybdenum
A gate electrode 19 is formed by forming a tungsten alloy film by sputtering and patterning it into a predetermined shape by etching.

After that, using the gate electrode 19 as a mask, phosphorus is implanted at a low concentration to form an LDD region (low-concentration implantation region) 17 using an ion doping apparatus. LDD
The channel region 21 is between the region 17 and the LDD region 17.
Becomes Next, a resist pattern is formed on the gate electrode 19 and 1 μm from both ends by photolithography,
By implanting high-concentration phosphorus using the resist pattern as a mask by an ion doping apparatus, the source
An N-type region (impurity-implanted region) 16 serving as a drain region is formed.

Next, a silicon oxide film 2 serving as an interlayer insulating film
Ob is formed by a TEOS-CVD method, and annealing is performed at 550 ° C. in a nitrogen atmosphere to activate the implanted ions. Thereafter, a contact hole that penetrates the silicon oxide film 20b and the gate insulating film 18 and reaches the source / drain region 16 formed of the polycrystalline silicon film is opened by etching.

Next, a titanium film and an aluminum-zirconium alloy film are formed by sputtering, and patterned into a predetermined shape by etching to form a source electrode and a drain electrode.
Drain electrode. ) 22 is formed.

Through the above process, an n-type TFT is completed. When a p-type TFT is required, a photolithography step and a B doping step may be added.

Conventionally, an amorphous silicon layer is used as a semiconductor layer, and the mobility is about 1 cm ² / VS (1
(× 10 ⁴ m ² / VS), so only TFTs for switching pixels are formed on the glass substrate 14, and the image driver IC including the drive circuit is attached by the TAB method or directly to the glass substrate 14. By implementing it.

However, when a polycrystalline silicon layer is used as a semiconductor layer as shown in FIG. 5, the mobility can be greatly improved (for example, 100 cm ² / VS (1 × 10 ⁶ m ² / V).
S)), in the example of FIG. 5, the CMOS transistors (not shown) forming the drive circuit are also formed on the glass substrate 14 around the TFTs forming the image display section.
Further, since the transistors constituting the image display driver IC and the TFT for image display are substantially the same in structure, they can be formed simultaneously by the same process.

Next, a silicon oxide film 2 serving as an interlayer insulating film
0a, flattening film 29 made of polyimide resin, transparent electrode 2
8. An array substrate is completed by sequentially forming the alignment film 27.

On the other hand, for the counter substrate, an insulating substrate, for example, a glass substrate of No. 1737 manufactured by Corning Incorporated is used as a glass substrate 25, and on one surface thereof, a color filter 26 and a transparent conductive film such as ITO are formed. This is completed by forming the counter electrode 24 and the alignment film 27 thus formed.

Thereafter, the liquid crystal 30 is sealed between the obtained array substrate and the opposing substrate to complete the image display section.

Next, in the method of manufacturing the image display device according to the first embodiment, the light receiving element is provided on the array substrate with the TF.
A description will be given based on an example formed with T. FIG. 6 is a cross-sectional view illustrating an image display device in which light receiving elements are formed on an array substrate.

The image display device shown in FIG. 6 is a liquid crystal display device similar to the image display device shown in FIG. In the image display device shown in FIG. 6, the TFT and the counter substrate are the same as those shown in FIG. 5, and are formed in the same steps. Therefore, the manufacturing process of the light receiving element will be described below.

As shown in FIG. 6, first, the glass substrate 14
A base film 15 is formed thereon. Next, a crystalline polysilicon film is formed, and high-concentration phosphorus is implanted to form an N-type region 16. The base film 15 and the N-type region 16 are the same as those formed in the image display section, and are formed simultaneously by the same process.

Next, a p + polycrystalline silicon film having a thickness of 70 nm is formed by a plasma CVD apparatus using a mixed gas of silane and diborane as a source gas. Thereafter, a part of the p + polycrystalline silicon film is removed by photolithography and etching to form a P-type region 61.

Further, a silicon oxide film 20b serving as a protective insulating film is formed by a TEOS-CVD method, and annealing is performed at 550 ° C. in a nitrogen atmosphere to activate the implanted ions. This silicon oxide film 20b is also the same as that formed in the image display section, and is formed simultaneously by the same process.

Next, a contact hole reaching the N-type region 16 and a contact hole reaching the P-type region 61 are formed in the silicon oxide film 20b by photolithography and etching.

Thereafter, a titanium film and an aluminum-zirconium alloy film are formed by sputtering, and are patterned into a predetermined shape by etching to form a cathode electrode 60a and an anode electrode 60b. In addition,
The cathode electrode 60a and the anode electrode 60b are
Although it has a shape different from that of the drain electrode 22, it is formed simultaneously with the source / drain electrode 22 in the same step.

By the above process, the light receiving element (PN type photodiode) is completed. Also, in the example of FIG.
As in the example of FIG. 5, the transistors forming the drive circuit are formed on the glass substrate 14 at the same time as the TFT for image display by the same process.

FIG. 14 is a sectional view showing an example in which the image display device shown in FIG. 6 is an EL display device. Also in the image display device shown in FIG. 14, a pixel TFT and a light receiving element are formed on a glass substrate 14 as in FIG.
However, since the image display device shown in FIG. 14 is an EL display device, the structure of a portion closer to the display surface than the pixel TFT is different from the image display device shown in FIG.

First, the manufacturing process of the above different parts will be described. First, an ITO electrode 71 serving as a transparent electrode connected to the drain electrode 22 of the TFT is formed on the array substrate. The formation of the ITO electrode is performed in the same manner as in the case of the liquid crystal display device shown in FIG. Thereafter, the light blocking layer 72 is formed by filling the space between the ITO electrode patterns with a resin black resist by photolithography.

Next, red, green, and blue luminescent materials (electroluminescent materials) are applied in a pattern using, for example, an ink-jet printing apparatus to form a luminescent layer 73. Thereafter, on the light-emitting layer 73, polyvinyl carbazole is vacuum-deposited to form a hole injection layer 74.

Next, for example, an aluminum quinolinol complex 75 is formed, and a reflective pixel electrode 76 is formed thereon, for example, of aluminum. Through the above steps, an electroluminescent display device is completed.

In the EL display device shown in FIG.
When a pulse signal is applied to the scanning line so that the FT is turned on and a display signal is applied to the signal line at the same time, the TFT is turned on, a current flows from the current supply line, and the electroluminescence cell emits light.

In Embodiment 1, a polydialkylfluorene derivative is used as an electroluminescent material, but the present invention is not limited to this. Examples of the electroluminescent material include other organic materials, for example, other polyfluorene-based materials, polyphenylvinylene-based materials, and inorganic materials.

Further, the formation of the light emitting layer 73 using an electroluminescent material is not limited to the above-described ejection formation by ink jet, but may be formation by coating such as spin coating or formation by vapor deposition.

As described above, according to the method for manufacturing an image display device according to the first embodiment, the common glass substrate
Part of an image display TFT, part of a transistor included in a driver circuit, and part of a light receiving element can be formed at the same time. Therefore, compared to the case where the light receiving element is connected as a separate chip, it is possible to reduce connection failures, and it is possible to reduce the installation area, thereby enabling downsizing.
The effect that the cost for connecting the light receiving element can be reduced can be obtained.

In the first embodiment, as described above, light transmission and reception by the light emitting element and the light receiving element are performed between the peripheral substrate and the image display driver IC. However,
The present invention is not limited to this, and a configuration in which an electromagnet or the like is used instead of the light emitting element and the light receiving element and signals are transmitted and received by magnetism can be used. Also in this case, similarly to the optical transmission and reception, the number of connection wirings can be reduced.

In addition, it is also possible to use a transmitting element for transmitting a radio wave and a receiving element for receiving a radio wave instead of the light emitting element and the light receiving element to transmit and receive signals by the radio wave. Also in this case, the number of connection wirings can be reduced as in the case of optical transmission / reception. Furthermore, when signals are transmitted and received by radio waves, there is an advantage that the signal transmission distance is long,
There is also an advantage that a signal is transmitted even if there is an obstruction.

(Embodiment 2) Next, an image display device, a method of manufacturing the same, and an image display driver IC according to Embodiment 2 of the present invention will be described with reference to FIGS. 7 to 11 show an example in which the image display device according to the second embodiment is a liquid crystal display device, and FIG.
An example of an L display device is shown.

FIG. 7 is a side view of the image display device according to the second embodiment. FIG. 8 is a diagram illustrating an upper surface of the image display device according to the second embodiment.

The image display device according to the second embodiment is also a liquid crystal display device similar to the first embodiment. 7 and 8
As shown in FIG. 7, in the image display device according to the second embodiment, similarly to the first embodiment, the image display driver IC 3 including the drive circuit is mounted on the array substrate 1 by COG. The peripheral substrate 5 has the light emitting element 7.

The image display device according to the second embodiment is
The image display according to the first embodiment is that a tablet is formed on the image display unit, the image driver IC 3 has the light emitting element 31, and the peripheral substrate 5 has the light receiving element 32. The configuration is different from that of the image display apparatus, and the other points are the same as those of the image display apparatus according to the first embodiment. The array substrate 1 and the counter substrate 2 of the image display device according to the second embodiment have the same configuration as the array substrate and the counter substrate shown in FIG.

For this reason, in the image display device according to the second embodiment, the optical signal transmitted from the image display driver IC3, for example, the optical signal including at least one of the tablet position information, the signal synchronization information and the peripheral luminance information is transmitted. It can be transmitted to the peripheral board 5. In the second embodiment,
The positioning of the light emitting element 31 and the light receiving element 32 is performed so that an optical signal can be transmitted similarly to the positioning of the light emitting element 7 and the light receiving element 8.

As in the case of the light emitting element 7 and the light receiving element 8, in order to realize signal transmission / reception on an optical transmission path with a smaller number of data bits, a parallel / serial conversion circuit ( Peripheral board 5 (not shown) is provided.
A serial-parallel conversion circuit is provided above. Modulated light is used for optical transmission.

Therefore, if the image display device according to the second embodiment is applied to an image display device that needs to transmit a signal from the image display driver IC 3 to the peripheral substrate 5, an increase in signal wiring can be suppressed, and The reliability of signal transmission can be improved, and high-speed transmission can be performed.

As shown in FIG. 8, each image display driver I
Each C3 is provided with one light emitting element 31 in addition to the light receiving element 8. Each image display driver IC3 receives an image signal and a control signal corresponding to a signal line to be driven, and transmits tablet information, signal synchronization information, and peripheral luminance information corresponding to a signal line to be driven.

In the second embodiment, a part of the image display driver 3 or one image display driver IC 3
The light-receiving element 8 and the light-receiving element 31 may be formed only in the case.
In this case, as in the first embodiment, the image signal and the control signal corresponding to the signal lines driven by all or the plurality of image display driver ICs 3 can be collectively received by one light receiving element 8, and the light receiving element 8 It is possible to adopt a configuration in which a signal is transmitted to an image display driver IC3 that is not formed.

Further, in this case, the tablet information, signal synchronization information and peripheral luminance information corresponding to the signal lines driven by all or a plurality of image display driver ICs 3 can be transmitted collectively by one light emitting element. The signal of the image display driver IC 3 in which no is formed can also be transmitted to the peripheral substrate 5.

Also in the second embodiment, the first embodiment
Similarly to the above, the image display driver IC 3 is mounted such that the surface on which the transistors and the like, the light receiving elements 8, and the light emitting elements 31 are formed faces the array substrate 1. Also, the array substrate 1
And the peripheral substrate 5 are adhered by an adhesive.

As described above, also in the second embodiment,
Only the power supply line needs to be electrically connected between the peripheral substrate 5 and the array substrate 1, and the number of connection points between the peripheral substrate 5 and the array substrate 1 can be greatly reduced.

Therefore, the connection reliability and the yield can be improved by using the image display device and the image display driver IC according to the second embodiment.
Therefore, the return rate can be reduced. Further, the cost can be reduced by simplifying the connection, and unnecessary radiation (EMS, EMI) can be reduced, so that the image quality can be stabilized and the adverse effect on other devices can be reduced. be able to.

In the second embodiment, the light receiving element 8
It can be formed in the same manner as in Embodiment 1. In the second embodiment, a single light emitting element manufactured separately from the image display driver IC 3 and the array substrate 1 can be used as the light emitting element 31. In this case, the light emitting element 31 may be mounted on the array substrate 1 separately from the image display driver IC3, or may be packaged together with the image display driver IC3. In the latter case, one IC package is formed by the image display driver IC 3 and the light emitting element 8.

However, from the viewpoint of reducing the number of components mounted on the COG, the light emitting element 31 is formed (monolithically formed) together with the transistors constituting the pixel driver IC 3 on a silicon substrate for forming the pixel driver IC 3. It is also preferable to form them together with TFTs on a glass substrate for forming the array substrate 1.

In the former case, since one IC chip is formed by the light emitting element 31 and the transistor constituting the image display driver IC 3, the number of components mounted by COG can be reduced. In the latter case, if a drive circuit is formed on a glass substrate on which the array substrate 1 is formed, the drive circuit,
Since all of the light receiving element 8 and the TFT can be formed on the same substrate, the number of components mounted by COG can be further reduced.

FIG. 9 is a sectional view showing an example of a light emitting device. The light emitting element shown in FIG. 9 is formed separately from the image display driver IC and the array substrate. A light emitting element and a method for forming the light emitting element will be described with reference to FIG.

First, an oxide film 34 is formed on the surface (upper surface in the figure) of the p-type silicon substrate 11 using a CVD apparatus.
Next, a part of the oxide film 34 is removed by photolithography and etching, and the laser ablation method is used.
A silicon ultrafine particle film 35 is formed.

Next, a pattern of the silicon ultrafine particle film 35 is formed by photolithography and etching.
Thereafter, an ITO electrode 28 is formed. Further, an aluminum electrode 12 is formed on the back surface of the p-type silicon substrate 11.
Through the above steps, the light-emitting element shown in FIG. 9 is completed. The light emitting element shown in FIG. 9 is an EL light emitting element (LED).

FIG. 10 shows a case where the light emitting element is the image display driver I.
It is sectional drawing which shows the example formed on the board | substrate of C. FIG.
Based on the above, a description will be given of a light-emitting element and a transistor constituting an image display driver IC, and a manufacturing process thereof.

The transistor shown in FIG. 10 is similar to the transistor shown in FIG. 4, and is formed by the manufacturing steps shown in FIG. In FIG. 10, 50 is a p-type silicon substrate, 51 is a silicon oxide film, 52 is a thermal oxide film, 56a is a source electrode, 56b is a drain electrode,
7 is a high-concentration injection region (n +), 58 is a low-concentration injection region (n-), and 59 is a gate electrode.

Next, the light emitting element will be described. First,
As shown in FIG. 10, on a p-type silicon substrate 50, annealing is performed in water vapor to form a thermal oxide film 52.
Further, the thermal oxide film other than the peripheral protection part of the part to be the light emitting part is removed by photolithography and etching.

Next, by laser ablation method,
A silicon ultrafine particle film 54 having a thickness of 70 nm is formed. Specifically, an n + silicon substrate is provided, a mask is formed on the n + silicon substrate by patterning holes, and the n + silicon substrate is irradiated with laser light at a high intensity to scatter the n + silicon substrate. A silicon ultrafine particle film 54 is formed.

Further, an ITO film 55 is formed by sputtering, and portions other than the upper surface of the light emitting portion are removed by photolithography and etching. After that, TEOS-
A silicon oxide film 51 serving as a protective film is formed by a CVD apparatus.

Next, a contact hole is formed in the silicon oxide film 51 by photolithography and etching. Next, a titanium film and an aluminum film to be electrodes are formed, and photolithography and etching are performed.
The titanium film and the aluminum film other than the portions that become the anode electrode 53a and the cathode electrode 53b are removed. Thereby, the light emitting element is completed. Through the above process, a light emitting element (LED) is completed.

As described above, in the example of FIG. 10, the transistor and the light emitting element are formed on the same p-type silicon substrate 50. 10, a silicon oxide film 51,
Thermal oxide film 52 and electrodes (53a, 53b, 56a, 56
The formation of b) is performed simultaneously by the same process in both the transistor and the light emitting element.

Therefore, also in the formation of the light emitting element, the formation of the light emitting element is processed simultaneously with the steps of the normal image display driver IC, and it can be said that the number of steps in the manufacture of the image display driver IC does not increase. Further, the connection reliability between the light emitting element and the image display driver IC can be improved. In Embodiment 2, an LED is formed as a light emitting element, but the light emitting element is not limited to this. In the present invention, the light emitting element is made of another material,
For example, an LED using GaAs, InP or the like may be used.

Next, in the method of manufacturing the image display device according to the second embodiment, the light emitting element is provided on the array substrate with the TF.
A description will be given based on an example formed with T. FIG.
FIG. 3 is a cross-sectional view illustrating an image display device in which light emitting elements are formed on an array substrate.

The image display device shown in FIG. 11 is a liquid crystal display device similar to the image display device shown in FIG. In the image display device shown in FIG. 11, the TFT and the counter substrate are the same as those shown in FIG. 5, and are formed in the same steps. Hereinafter, the manufacturing process of the light emitting device will be described.

As shown in FIG. 11, first, the glass substrate 1
On the substrate 4, a base film 15 is formed. This base film 15 is the same as that formed in the image display section, and is formed simultaneously by the same process.

Next, an ITO film to be the transparent electrode 64 is formed by a sputtering method. Next, a silicon ultrafine particle film 63 having a thickness of 70 nm is formed by a laser ablation method. Specifically, an n + silicon substrate is installed, and n +
+ Irradiate the silicon substrate with a laser beam at a high intensity, and n
+ The silicon substrate is scattered to form a silicon ultrafine particle film (N-type region) 63.

Further, a p + polycrystalline silicon film 62 (P-type region) having a film thickness of 70 nm was formed by a plasma CVD apparatus using a mixed gas of silane and diborane as a raw material gas. For the activation of
Annealing is performed at 550 ° C. in a nitrogen atmosphere. This silicon oxide film 20b is also the same as that formed in the image display section, and is formed simultaneously by the same process. Thereafter, unnecessary portions of the p + polycrystalline silicon film 62 and the fine particle silicon film 63 are removed by photolithography and etching.

Next, a contact hole reaching the transparent electrode 64 and a contact hole reaching the p + polycrystalline silicon film 62 are formed in the silicon oxide film 20b by photolithography and etching.

After that, a titanium film and an aluminum-zirconium alloy film are formed by sputtering, and are patterned into a predetermined shape by etching to form a cathode electrode 60a and an anode electrode 60b. In addition,
The cathode electrode 60a and the anode electrode 60b are
Although it has a shape different from that of the drain electrode 22, it is formed simultaneously with the source / drain electrode 22 in the same step.

By the above process, the light emitting element (LE)
D) is completed. Also, in the example of FIG. 10, as in the example of FIG. 5, the CMOS transistors forming the driving circuit are formed on the glass substrate 14 at the same time as the image display TFTs in the same process.

FIG. 15 is a sectional view showing an example in which the image display device shown in FIG. 11 is an EL display device. FIG.
In the image display device shown in FIG. 1, a pixel TFT and a light emitting element are formed on a glass substrate 14 as in FIG. However, since the image display device illustrated in FIG. 15 is an EL display device, the configuration of a portion closer to the display surface than the pixel TFT is different from the image display device illustrated in FIG. The configuration of the portion on the display surface side from the pixel TFT is the same as the configuration shown in FIG.

As described above, according to the method of manufacturing an image display device according to the second embodiment, the common glass substrate
Part of an image display TFT, part of a transistor included in a driver circuit, and part of a light-emitting element can be formed at the same time. Therefore, compared to the case where the light emitting element is connected as another chip, it is possible to reduce connection failures, and it is possible to reduce the installation area and to reduce the size,
The effect that the cost for connecting the light emitting element can be reduced can be obtained.

Also, in the second embodiment, similarly to the first embodiment, transmission and reception by magnetic signals can be performed by using an electromagnet or the like instead of the light emitting element and the light receiving element. And a receiving element for receiving a radio wave.

(Embodiment 3) Next, an image display device, a method of manufacturing the same, and an image display driver IC according to Embodiment 3 of the present invention will be described with reference to FIGS. FIG. 12 is a diagram illustrating an upper surface of the image display device according to the third embodiment.

As shown in FIG. 12, the image display apparatus according to the third embodiment has the same array substrate 1 and counter substrate 2 as in the first embodiment, but has a peripheral substrate (not shown). A transmitting element (not shown) for transmitting a radio signal is attached to the image display driver IC3, and the image display driver IC3 has a receiving element 38 for receiving the radio signal. Another difference is that a solar cell 36 having amorphous silicon or polysilicon as a light receiving layer is formed on the array substrate 1.

In the image display device according to the third embodiment, the image display section is driven by the solar cell 36. The image display device according to the third embodiment includes:
A rechargeable secondary battery 37 is provided. Rechargeable battery 3
Reference numeral 7 is charged by the solar cell 36 to stabilize the power supply to the image display unit.

As described above, in the third embodiment, the power supply is provided to the array substrate 1, and the peripheral substrate and the image display driver transmit and receive by radio signals.
Therefore, the array substrate 1 and the opposing substrate 2 can be detached from the peripheral substrate, that is, from the image display device.
Further, since the array substrate 1 is provided with a power supply by the solar cell 38, it is possible to display an image in a state where the array substrate 1 is separated from the peripheral substrate.

Note that, regardless of the third embodiment, the image display devices according to the first and second embodiments can also be provided with a solar cell. In this case, in the image display devices according to the first and second embodiments, the array substrate 1 and the counter substrate 2 can be configured to be detachable from the peripheral substrate.

However, as described above, Embodiments 1 and 2
In the image display device according to the above, since transmission and reception are performed by optical signals, there is a problem that a signal transmission distance is short and a signal is difficult to be transmitted if there is a shield. From this point,
It can be said that the image display device according to the third embodiment is more suitable for a detachable configuration.

The supply of light to the solar cell 38 may be performed by external light or by irradiation of light from a peripheral substrate. It is also possible to design so that part of the light emitted by the backlight used for image display enters the solar cell.

In the third embodiment, a transmitting element can be provided in addition to the transmitting element 38 in the image display driver IC3, and a receiving element in addition to the transmitting element can be provided in the peripheral substrate. it can. In this case, as in the second embodiment, for example, a radio signal including at least one of tablet position information, signal synchronization information, and peripheral luminance information can be transmitted to the peripheral substrate.

In the third embodiment, the solar cell 38 is formed around the image display section, but is not limited to this.
It may be formed in the image display unit. Further, the solar cell 38 may be a single solar cell manufactured separately from the image display driver IC 3 and the array substrate 1. The solar cell 38 may be packaged together with the image display driver IC3. In this case, one IC package is formed by the image display driver IC3 and the solar cell 38.

From the viewpoint of reducing the number of components mounted by COG, the solar cell 38 is formed (monolithically formed) together with the transistors constituting the pixel driver IC 3 on a silicon substrate for forming the pixel driver IC 3. Preferably, it is also preferably formed together with a TFT on a glass substrate for forming the array substrate 1.

In the former case, since one IC chip is formed by the solar cell 38 and the transistor constituting the image display driver IC 3, the number of components mounted by COG can be reduced. In the latter case, if a drive circuit is formed on a glass substrate on which the array substrate 1 is formed, the drive circuit,
Since all of the solar cell 38 and the TFT can be formed on the same substrate, the number of components mounted by COG can be further reduced.

When the solar cell 33 is formed on a silicon substrate for forming the image display driver IC 3, FIG.
The process of forming the light receiving element described in (1) may be performed so that the area of the light receiving portion is increased.

Next, an example of forming a solar cell together with a TFT on an array substrate will be described with reference to FIGS. 12 to 13 and FIG. 12 and 13 show an example in which the image display device according to the third embodiment is a liquid crystal display device, and FIG. 16 shows an example in which the image display device according to the first embodiment is an EL display device. ing.

FIG. 13 is a sectional view showing an image display device in which solar cells are formed on an array substrate. The image display device shown in FIG. 13 is also a liquid crystal display device similar to the image display device shown in FIG. In the image display device shown in FIG.
The FT and the counter substrate are the same as those shown in FIG. 5, and are formed in the same steps. Hereinafter, the manufacturing process of the solar cell will be described.

[0158] As shown in FIG.
On the substrate 4, a base film 15 is formed. Next, a crystalline polysilicon film is formed, and high-concentration phosphorus is implanted into the N-type region 16.
To form The base film 15 and the N-type region 16 are the same as those formed in the image display section, and are formed simultaneously by the same process.

Next, a p + polycrystalline silicon film is formed to a thickness of 70 nm by a plasma CVD apparatus using a mixed gas of silane and diborane as a source gas. Thereafter, a part of the p + polycrystalline silicon film is removed by photolithography and etching to form a P-type region 61.

Further, a silicon oxide film 20b serving as a protective insulating film is formed by a TEOS-CVD method, and annealing is performed at 550 ° C. in a nitrogen atmosphere to activate the implanted ions. This silicon oxide film 20b is also the same as that formed in the image display section, and is formed simultaneously by the same process.

Next, a contact hole reaching the N-type region 16 and a contact hole reaching the P-type region 61 are formed in the silicon oxide film 20b by photolithography and etching. In order to increase the area of the light receiving portion, the contact holes are formed such that the distance between the contact holes is shorter than that in the case of the light emitting element shown in FIG.

Thereafter, a titanium film and an aluminum-zirconium alloy film are formed by sputtering, and are patterned into a predetermined shape by etching to form a cathode electrode 64a and an anode electrode 64b. In addition,
The cathode electrode 64a and the anode electrode 64b have a source
Although it has a shape different from that of the drain electrode 22, it is formed simultaneously with the source / drain electrode 22 in the same step.

The solar cell is completed by the above process. In the example of FIG. 13, as in the example of FIG.
It is formed at the same time as the image display TFT by the same process.

FIG. 16 is a sectional view showing an example in which the image display device shown in FIG. 13 is an EL display device. FIG.
In the image display device shown in FIG. 1, a pixel TFT and a light emitting element are formed on a glass substrate 14 as in FIG. However, since the image display device illustrated in FIG. 16 is an EL display device, the configuration of a portion closer to the display surface than the pixel TFT is different from the image display device illustrated in FIG. The configuration of the portion on the display surface side from the pixel TFT is the same as the configuration shown in FIG.

As described above, according to the third embodiment, a part of a TFT for image display, a part of a transistor constituting a driving circuit, and a part of a solar cell are formed on a common glass substrate. Can be simultaneously formed. Therefore, compared to the case where a solar cell is separately provided and connected, connection failure can be reduced, the installation area can be reduced, the size can be reduced, and the cost for connecting the solar cell can be reduced. The effect can be obtained.

[0166]

As described above, the use of the image display device according to the present invention makes it possible to transmit and receive optical signals between the peripheral circuit and the drive circuit. For this reason,
Since electrical connection can be made only to the power supply line, the number of connection points can be significantly reduced.

[0167] Further, since the connection reliability and the yield can be improved, the return rate can be reduced. By simplifying the connection, cost can be reduced, and unnecessary radiation (EMS, EMI) can be reduced, so that image quality can be stabilized and adverse effects on other devices can be reduced. . Unwanted radiation (EM
(S, EMI), it is also possible to input data using a signal with a high frequency.

Further, if the light receiving element is provided in the peripheral circuit and the light emitting element is provided in the driving circuit, tablet information can be transmitted without increasing the number of connection wirings of the image display unit. Further, by transmitting the signal synchronization information from the drive circuit to the peripheral circuit, the reliability of signal transmission can be improved, and a signal having a larger amount of information can be transmitted.

In the mode in which signals are transmitted and received between the peripheral circuit and the drive circuit by magnetic or radio waves, the signal transmission and reception distance can be increased, and even if there is a shield between the peripheral circuit and the drive circuit, the signal can be transmitted and received. Can be transmitted and received.

In the image display device of the present invention, a solar battery and a rechargeable battery can be provided on the array substrate. In this aspect, electrical connection wiring between the peripheral circuit and the drive circuit can be eliminated, and reliability can be further improved. Further, in this aspect, the image display portion can have a detachable structure, and the degree of freedom in using the image display device of the present invention can be increased.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a side surface of an image display device according to a first embodiment;

FIG. 2 is a diagram illustrating an upper surface of the image display device according to the first embodiment;

FIG. 3 is a cross-sectional view illustrating an example of a light receiving element.

FIG. 4 is a diagram showing an example in which a light receiving element is formed on a substrate of an image display driver IC.

FIG. 5 is a cross-sectional view of the image display device according to the first embodiment, taken along a line AA ′ in FIG. 1;

FIG. 6 is a cross-sectional view illustrating an image display device in which light receiving elements are formed on an array substrate.

FIG. 7 is a diagram illustrating a side surface of the image display device according to the second embodiment;

FIG. 8 is a diagram illustrating an upper surface of the image display device according to the second embodiment;

FIG. 9 is a cross-sectional view illustrating an example of a light emitting element.

FIG. 10 is a cross-sectional view illustrating an example in which a light emitting element is formed on a substrate of an image display driver IC.

FIG. 11 is a cross-sectional view illustrating an image display device in which light emitting elements are formed on an array substrate.

FIG. 12 is a diagram illustrating an upper surface of the image display device according to the third embodiment;

FIG. 13 is a cross-sectional view showing an image display device in which a solar cell is formed on an array substrate.

14 is a cross-sectional view showing an example in which the image display device shown in FIG. 6 is an EL display device.

FIG. 15 is a cross-sectional view showing an example in which the image display device shown in FIG. 11 is an EL display device.

FIG. 16 is a cross-sectional view showing an example in which the image display device shown in FIG. 13 is an EL display device.

FIG. 17 is a diagram illustrating a conventional liquid crystal display device in which image display driver ICs are connected by a TAB method.

FIG. 18 is a diagram illustrating a conventional liquid crystal display device in which image display driver ICs are connected by a COG method.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 array substrate 2 opposing substrate 3 image display driver IC 4 TCP 5 peripheral substrate 6 connector 7 light emitting element on peripheral substrate 8 light receiving element on image display driver IC 9 antireflection film 10 n electrode 11 p-type silicon substrate 12 aluminum electrode ( 13 n layer 14 glass substrate 15 base film (mainly SiO2) 16 n-type region (source / drain region, high concentration impurity implantation region) 17 LDD region (low concentration impurity implantation region) or offset region 18 gate insulating film (Mainly SiO2) 19 gate electrode (mainly MoW) 20a silicon oxide film 20b silicon oxide film 21 channel region 22 source / drain electrode 23 large grain silicon crystal 24 counter electrode (ITO) 25 glass substrate 26 color filter 27 alignment film 28 Transparent electrode (ITO) 29 Flattening film (Po 30 liquid crystal 31 light emitting element on image display driver IC 32 light receiving element on peripheral substrate 33 solar cell on image display driver IC 34 oxide film 35 silicon ultrafine particle layer 36 solar cell 37 secondary battery 38 receiving element 40, 50 p-type silicon substrate 41 n-type amorphous silicon film 42, 51 silicon oxide film 43a, 56a source electrode 43b, 56b drain electrode 43c, 53a anode electrode 43d, 53b cathode electrode 44, 57 high concentration injection region (n +) 45 58, low-concentration injection region (n-) 46 p region 48, 59 gate electrode 49, 52 thermal oxide film (gate oxide film) 54 silicon ultrafine particle film 55 ITO film 60a, 65a cathode electrode 60b, 65b anode electrode 61P Type region 62 polycrystalline silicon film (P-type region) 63 silicon Emissions ultrafine particle film (N type region) 64 transparent electrode film 71 ITO electrodes 72 light blocking layer 73 emitting layer 74 a hole injection layer 75 of aluminum-quinolinol complex 76 reflective pixel electrode

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G09F 9/30 338 G09F 9/30 338 360 360 360 365 365Z 9/35 9/35 H01L 31/04 H01L 31 / 12 C 31/12 31/04 Q F term (reference) 2H093 NA16 NC07 NC09 NC11 NC34 NC49 NC72 NC73 NC90 ND40 ND60 5C094 AA21 AA31 AA45 AA52 AA56 BA03 BA27 BA32 BA34 BA43 CA19 DA09 DA12 DA13 DB02 EB02 FA10 GA05 GB10 5F05A A 5F089 AA06 AA10 AB03 AB09 5G435 AA14 AA16 AA17 AA18 BB02 BB05 BB12 CC09 EE31 EE37 EE41 GG22 HH12 HH13 HH14 KK05

Claims (43)

[Claims] 1. A signal is transmitted from a peripheral circuit to a drive circuit,
An image display device that displays an image by driving a plurality of transistors arranged in a matrix by the driving circuit, wherein the peripheral circuit is configured to transmit the signal as an optical signal, An image display device, wherein the drive circuit has a light receiving element for receiving the optical signal. 2. The image display device according to claim 1, wherein a part of at least one of the drive circuit and the transistor and a part or all of the light receiving element are formed in the same step. 3. A solar cell, wherein a part of the driving circuit, a part of the transistor, a part or all of the light receiving element, and a part or all of the solar cell are formed by the same process. The image display device according to claim 1, wherein the image display device is formed. 4. The light receiving element and the transistor,
The image display device according to claim 2, wherein at least an insulating film, an impurity implantation region, and an electrode are provided on the same substrate, and the electrode of the light receiving element and the electrode of the transistor are formed in the same process. . 5. The light receiving element and the transistor,
At least an insulating film, an impurity-implanted region, and an electrode are provided over the same substrate, and a part or all of the impurity-implanted region of the light-receiving element and a part or all of the impurity-implanted region of the transistor are the same. 3. The image display device according to claim 2, wherein the image display device is formed by a process. 6. The light receiving element and the transistor,
3. The semiconductor device according to claim 2, wherein at least an insulating film, an impurity-implanted region and an electrode are provided on the same substrate, and the insulating film of the light receiving element and the insulating film of the transistor are formed by the same process. Image display device. 7. The driving circuit has a light emitting element for transmitting an optical signal to the peripheral circuit, and the peripheral circuit has a light receiving element for receiving an optical signal from the driving circuit. Item 2. The image display device according to Item 1. 8. An optical signal transmitted from the driving circuit,
The image display device according to claim 7, wherein the image display device includes at least one of tablet position information, signal synchronization information, and peripheral luminance information. 9. The image display device according to claim 7, wherein a part of at least one of the driving circuit and the transistor and a part or all of the light emitting element are formed in the same step. 10. A part of the drive circuit, a part of the transistor, a part or all of the light receiving element, and a part or all of the light emitting element are formed by the same process. 8. The image display device according to 7. 11. A solar cell including a part of the driving circuit, a part of the transistor, a part or all of the light-emitting element, and a part or all of the solar cell in the same step. The image display device according to claim 7, wherein the image display device is formed. 12. A solar cell, comprising: a part of the drive circuit; a part of the transistor; a part or all of the light receiving element; a part or all of the light emitting element; The image display device according to claim 7, wherein a part or all of the image display device is formed by the same process. 13. The light emitting element and the transistor are formed on the same substrate by providing at least an insulating film, an impurity implantation region and an electrode, and the electrode of the light emitting element and the electrode of the transistor are the same. The image display device according to claim 7, which is formed by a process. 14. The light emitting element and the transistor are formed on the same substrate by providing at least an insulating film, an impurity implantation region, and an electrode, wherein the insulating film of the light emitting element and the insulating film of the transistor are provided. 8. The image display device according to claim 7, wherein are formed by the same process. 15. The image display device according to claim 1, wherein said optical signal is modulated light. 16. The substrate according to claim 1, wherein the peripheral circuit and the transistor are formed on separate substrates, respectively, and the substrate on which the peripheral circuit is formed and the substrate on which the transistor is formed are fixed. Image display device. 17. An image display device for transmitting a signal from a peripheral circuit to a driving circuit, and driving the plurality of transistors arranged in a matrix by the driving circuit to display an image, wherein the peripheral circuit comprises: An image display device configured to transmit a signal as a radio signal, wherein the drive circuit has a receiving element for receiving the radio signal. 18. The driving circuit according to claim 18, wherein the driving circuit has a transmitting element for transmitting a radio signal to the peripheral circuit, and the peripheral circuit has a receiving element for receiving a radio signal from the driving circuit. Item 18. The image display device according to Item 17. 19. The image display device according to claim 18, wherein the radio signal transmitted from the drive circuit includes at least one of tablet position information, signal synchronization information, and peripheral luminance information. 20. A part including the drive circuit and the transistor is detachable from a part including the peripheral circuit, and is configured to be capable of displaying an image in a state separated from the part including the peripheral circuit. Item 19. The image display device according to Item 18. 21. The image display device according to claim 20, wherein a power supply for displaying an image is provided in a portion including the drive circuit and the transistor. 22. The image display device according to claim 21, wherein the power supply is a solar cell, and the solar cell is provided on a substrate on which the transistor is provided. 23. The image display device according to claim 1, wherein the image display device is a liquid crystal display device. 24. The image display device according to claim 1, wherein said image display device is an EL display device. 25. The image display device according to claim 1, wherein the image display device is a field emission display device. 26. An image for displaying an image by a peripheral circuit transmitting an optical signal to a driving circuit, and the driving circuit receiving the optical signal by a light receiving element and driving a plurality of transistors arranged in a matrix. A method for manufacturing a display device, comprising: at least a step of simultaneously forming at least one part of the drive circuit and the transistor and part or all of the light receiving element. A method for manufacturing a display device. 27. The light-receiving element and the transistor are formed by providing at least an insulating film, an impurity-implanted region, and an electrode on the same substrate, wherein the electrode of the light-receiving element and the electrode of the transistor are provided. 27. The method for manufacturing an image display device according to claim 26, wherein the steps (a) and (b) are simultaneously formed. 28. The light-receiving element and the transistor are formed on the same substrate by providing at least an insulating film, an impurity-implanted region, and an electrode; 27. The method of manufacturing an image display device according to claim 26, wherein the whole and part or all of the impurity-implanted region of the transistor are formed simultaneously. 29. The light receiving element and the transistor are formed by providing at least an insulating film, an impurity implantation region, and an electrode on the same substrate, and the insulating film of the light receiving element and the transistor The method for manufacturing an image display device according to claim 26, wherein the insulating film and the insulating film are simultaneously formed. 30. The driving circuit includes a light emitting element for transmitting an optical signal including at least one of tablet position information, signal synchronization information, and peripheral luminance information to the peripheral circuit, wherein the peripheral circuit includes: A light receiving element for receiving an optical signal including at least one of tablet position information, signal synchronization information, and peripheral luminance information; and a part of at least one of the drive circuit and the transistor; 27. The method for manufacturing an image display device according to claim 26, further comprising a step of forming a part or all of the elements simultaneously. 31. The light-emitting element and the transistor are formed by providing at least an insulating film, an impurity-implanted region, and an electrode on the same substrate, wherein the electrode of the light-emitting element and the electrode of the transistor are provided. 31. The method of manufacturing an image display device according to claim 30, wherein the image display device is formed simultaneously. 32. The light emitting element and the transistor are formed by providing at least an insulating film, an impurity-implanted region, and an electrode on the same substrate, wherein the insulating film of the light emitting element is insulated from the transistor. The method for manufacturing an image display device according to claim 30, wherein the film is formed simultaneously. 33. An image display driver IC having a light receiving element for converting an input optical signal into an electric signal. 34. The image display driver IC according to claim 33, wherein the light receiving element is monolithically formed on a silicon substrate constituting the image display driver IC. 35. The image display driver IC according to claim 33, wherein said light receiving element is a photodiode. 36. The image display driver IC according to claim 33, wherein said light receiving element is a phototransistor. 37. An image display driver IC having a light emitting element for converting an input electric signal into an optical signal. 38. The image display driver IC according to claim 37, wherein the light emitting element is monolithically formed on a silicon substrate constituting the image display driver IC. 39. The light emitting device is an LED.
8. The image display driver IC according to 7. 40. The light emitting device according to claim 3, wherein the light emitting device is a laser.
8. The image display driver IC according to 7. 41. An image display driver IC comprising a solar cell. 42. An image display driver IC comprising at least one of an element that receives a radio wave and converts it into an electric signal, and an element that converts an electric signal into a radio wave and transmits it. 43. An image display driver IC comprising at least one of an element for receiving a magnetic signal and converting it into an electric signal, and an element for converting an electric signal into a magnetic signal and transmitting it.