JP2002261449A - Module with built-in component and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a module with built-in component in which an inorganic filler can be applied at a high concentration, active components, such as the semiconductor or passive components, such as the chip resistor and chip capacitor can be embedded by a simple method, and a multilayer wiring structure can be produced easily. SOLUTION: The module with the built-in component has a core layer made of an electrical insulating material and an electrical insulating layer and a plurality of wiring patterns formed on at least one surface of the core layer. The electrical insulating material of the core layer is composed of a mixture containing at least the inorganic filler and a thermosetting resin. The core layer incorporates at least one or more active component and/or passive components and has a plurality of wiring patterns and inner vias composed of a conductive resin. In addition, the elastic modulus of the electrical insulating material of the core layer composed of the mixture containing at least the inorganic filler and thermosetting resin at a room temperature is adjusted within the range of 0.6-10 GPa.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-density mounting module incorporating active components such as semiconductors and passive components such as resistors and capacitors.

[0002]

2. Description of the Related Art In recent years, with the demand for higher performance and smaller size of electronic equipment, higher density and higher function of semiconductors have been called out. Accordingly, a small and high-density circuit board for mounting them is also desired. For these requests,
As a means of realizing high-density mounting, an inner via hole connection method, which is an electric connection method between layers of a substrate that can connect electric wiring between LSIs and components in the shortest distance, is used since the highest density wiring of a circuit can be achieved. Development is proceeding in the area.

[0003] However, these methods also require 2
Dimensionally mounting components at high density is approaching its limits. In addition, since these high-density mounting boards with an inner via structure are made of resin-based materials, their thermal conductivity is low, and the higher the density of component mounting, the more heat generated from components can be dissipated. Becomes difficult. In the near future, CP
It is said that the clock frequency of U will be about 1 GHz, and it is predicted that the power consumption of the CPU will reach 100 to 150 W per chip in conjunction with the sophistication of its function. In addition, with the increase in speed and density, the influence of noise is being avoided and it is becoming impossible to pass through. Therefore, in addition to high density and high performance, the circuit board is expected to have a three-dimensional mounting module incorporating components in addition to noise and heat dissipation.

In response to such a demand, Japanese Patent Laid-Open No. 2-121
No. 392 proposes a module in which a multilayer ceramic substrate is applied and a capacitor and a resistor are formed inside. Such a ceramic multilayer substrate is obtained by processing a high-dielectric material, which can be co-fired with the substrate material, into a sheet shape, and sandwiching and firing it inside. Due to the displacement and the difference in shrinkage during sintering, warping may occur after firing or peeling of internal wiring may occur, and precise control of firing conditions is required. In addition, since built-in components using a ceramic substrate are based on simultaneous firing as described above, capacitors and resistors can be formed, but it is impossible to simultaneously fire semiconductors such as silicon that lack heat resistance. It cannot be built-in.

On the other hand, there has been proposed a circuit board in which active components such as semiconductors and passive components such as capacitors and resistors are incorporated at a low temperature. JP-A-3-69191 and JP-A-11-103147 disclose that an electronic component is mounted on a copper wiring formed on a printed circuit board material, and that a buried layer is formed by further covering the entire surface with a resin. Further, a method of bonding a plurality of layers with an adhesive is described. Also, Japanese Patent Application Laid-Open
Japanese Patent No. 214092 describes a method in which a material such as a dielectric is buried in a through-hole and a surface electrode is formed to incorporate a capacitor and a resistor. In addition, there is a method of adding a function such as a capacitor to the printed circuit board itself. JP-A-5-7063 (Patent No. 30195)
No. 41) describes a capacitor built-in substrate in which electrodes are formed on both surfaces of a dielectric substrate in which a dielectric powder and a resin are mixed. Also, JP-A-11-220262 discloses that
A method of incorporating a semiconductor, a capacitor, and the like in an inner via configuration is described.

[0006]

As described above, a conventional three-dimensional mounting module having an inner via structure capable of high-density wiring and having built-in components uses a ceramic substrate excellent in heat dissipation and airtightness. And a printed circuit board that can be cured at a low temperature. The ceramic substrate is excellent in heat dissipation and can incorporate a capacitor having a high dielectric constant. However, it is difficult to fire different materials at the same time. On the other hand, a printed circuit board that can be cured at a low temperature has the possibility of incorporating a semiconductor and is advantageous in terms of cost, but a composite material obtained by mixing a resin with a dielectric material can obtain a high dielectric constant. It is difficult. This is apparent from the example of the printed circuit board in which the capacitor or the dielectric powder formed in the through hole is mixed. In general, printed circuit boards have low thermal conductivity and are difficult to dissipate heat. Also, with regard to the method of sealing and mounting multiple semiconductors and capacitors mounted on a printed circuit board with resin, while individual components can be embedded, the thickness of the module itself becomes thicker for embedding individual components, It is difficult to reduce the module volume. In addition, it is possible to form a buffer layer having a specific thermal expansion coefficient between the built-in component and the printed circuit board material, and to reduce the thermal expansion coefficient of the printed circuit board material against the thermal stress caused by the difference in thermal expansion coefficient between the built-in component and the printed circuit board. Means such as matching are taken, but the thermal expansion coefficient of the semiconductor is generally small, and it is extremely difficult to match the thermal expansion coefficient over the operating temperature range only with the printed circuit board material.

In order to solve the above-mentioned conventional problems, the present invention is capable of filling a thermosetting resin with an inorganic filler at a high concentration, and furthermore, using a simple method, active components such as semiconductors, chip resistors, and chips. It is an object of the present invention to provide a heat conductive component built-in module in which passive components such as capacitors are embedded inside and a multilayer wiring structure can be easily manufactured. In the present invention, by selecting an inorganic filler and a thermosetting resin, it is possible to produce a module having desired performance, and furthermore, has an ultra-high-density mounting form excellent in heat dissipation and dielectric properties. A component built-in module can be provided.

[0008]

In order to achieve the above object, a component built-in module according to the present invention comprises a core layer made of an electric insulating material, and an electric insulating layer and a plurality of wiring patterns on at least one surface of the core layer. A module with a built-in component, wherein the electrical insulating material of the core layer is formed of a mixture containing at least an inorganic filler and a thermosetting resin, and at least one or more active components and / or passive components are provided inside the core layer. The core layer has a plurality of wiring patterns and a plurality of inner vias made of a conductive resin, and at room temperature of an electrical insulating material made of a mixture containing at least an inorganic filler and a thermosetting resin of the core layer. The elastic modulus is in the range of 0.6 to 10 GPa.

As a result, active components such as semiconductors and passive components such as chip resistors and chip capacitors can be embedded inside by a simple construction method, and desired performance can be obtained by selecting an arbitrary inorganic filler and a thermosetting resin. It is possible to provide a module having high reliability with respect to stress such as thermal shock. That is, the coefficient of thermal expansion in the planar direction of the module can be matched with that of the semiconductor, or the module can have heat dissipation. In addition, by setting the elasticity of the electric insulating material at room temperature in the range of 0.6 to 10 GPa, components such as semiconductors can be built in without stress, so that a module having an ultra-high-density mounting form can be realized. Further, since a multi-layer high-density wiring layer capable of rewiring can be formed on the surface of the core layer containing the components, a thin and extremely high-density module can be realized. Further, since the problem of noise due to the development of higher frequencies in the future can be made as close as possible to the arrangement of the semiconductor and the chip capacitor, the effect of reducing noise can be expected.

In the module with a built-in component according to the present invention, the electrical insulating material of the core layer comprising a mixture containing at least an inorganic filler and a thermosetting resin has an elastic modulus at room temperature of 0.6 to 10 GPa. In addition, since the thermosetting resin is made of a thermosetting resin having a plurality of glass transition temperatures, even when components having various thermal expansion coefficients are built therein, it is resistant to thermal stress from thermal shock of the built-in components. A component built-in module is obtained.

In the module with a built-in component according to the present invention, the electrical insulating material of the core layer comprising a mixture containing at least an inorganic filler and a thermosetting resin has an elastic modulus at room temperature of 0.6 to 10 GPa. And the thermosetting resin comprises a thermosetting resin having a glass transition temperature of at least -20 ° C to 60 ° C, and a thermosetting resin having a glass transition temperature of 70 ° C to 170 ° C. Features. As a result, even if components having various thermal expansion coefficients are built in, a component built-in module that is more resistant to thermal stress from thermal shock of the built-in components can be obtained.

Further, in the component built-in module of the present invention, it is preferable that a through hole penetrating all of the core layer, the electric insulating layer and the wiring pattern is formed.

[0013] In this way, in addition to the above, a normal printed circuit board manufacturing process and equipment can be used as they are, so that a component built-in module can be realized extremely easily.

Further, the component built-in module of the present invention provides a core layer made of an electric insulating material, and an electric insulating material made of an electric insulating material formed on at least one surface of the core layer from a mixture containing an inorganic filler and a thermosetting resin. The component-containing module comprising a layer and a plurality of wiring patterns made of copper foil, wherein the core layer has a plurality of wiring patterns made of copper foil and a plurality of inner vias made of a conductive resin,
It is preferable that the wiring pattern is electrically connected by the inner via.

This makes it possible to embed active components such as semiconductors and passive components such as chip resistors and chip capacitors in a simple manner, and to select desired inorganic fillers for the surface wiring layer to obtain desired performance. Are possible. That is, the coefficient of thermal expansion in the planar direction of the module can be matched with that of the semiconductor, or the module can have heat dissipation. Further, since a multi-layer high-density wiring layer capable of rewiring can be formed in the inner via configuration on the surface of the core layer in which the components are built, a thin and extremely high-density module can be realized.

The component built-in module according to the present invention comprises a core layer made of an electric insulating material, an electric insulating layer made of an electric insulating material formed on at least one side of the core layer from a thermosetting resin, and copper plating. Wherein the core layer has a wiring pattern made of a plurality of copper foils and a plurality of inner vias made of a conductive resin, and the wiring pattern made of the copper plating. Are preferably electrically connected by the inner via.

In this way, in addition to the above, the existing plating technique can be used as it is, and the surface wiring and the insulating layer can be formed thin, so that a thinner component built-in high-density module can be realized.

Further, the component built-in module of the present invention comprises a core layer made of an electric insulating material, an electric insulating layer made of an organic film having a thermosetting resin formed on at least one surface of the core layer on both surfaces, and a copper foil. Wherein the core layer has a plurality of wiring patterns made of copper foil and a plurality of inner vias made of a conductive resin, wherein the wiring pattern is Preferably, they are electrically connected by vias.

As a result, not only a high-density and thin surface wiring layer can be formed, but also the organic film is extremely excellent in surface smoothness. In addition, since the thickness accuracy is also excellent, the impedance control of the surface wiring can be performed with extremely high accuracy,
A high-frequency component built-in module suitable for a high frequency band can be realized.

Further, the module with a built-in component according to the present invention is a module with a built-in component in which a core layer made of an electrically insulating material and a ceramic substrate having a plurality of wiring patterns and inner vias are adhered to at least one surface of the core layer. Preferably, the core layer has a wiring pattern made of a plurality of copper foils and a plurality of inner vias made of a conductive resin.

As a result, it is possible to obtain a module in which components are incorporated, and which has excellent heat dissipation and airtightness, and incorporates a capacitor having a high dielectric constant.

Further, the module with a built-in component according to the present invention is a module with a built-in component, wherein a core layer made of an electrically insulating material and a plurality of ceramic substrates having a plurality of wiring patterns and inner vias are bonded to at least one surface of the core layer. It is preferable that the core layer has a wiring pattern formed of a plurality of copper foils and a plurality of inner vias formed of a conductive resin, and the plurality of ceramic substrates are formed of a dielectric material having a different dielectric constant.

Accordingly, different types of lamination of a ceramic capacitor having a high dielectric constant and a ceramic substrate having a low dielectric constant suitable for a high-speed circuit can be easily realized. In particular, a ceramic layer having a small transmission loss can be used for the high-speed wiring layer, and a ceramic layer having a high dielectric constant can be used for a portion requiring a bypass capacitor.

In the component built-in module according to the present invention, it is preferable that a film-like passive component is disposed between the wiring patterns formed on at least one surface of the core layer. As a result, a three-dimensional module in which components are built in at a higher density can be realized.

In the component built-in module according to the present invention, the film-like passive component is at least one selected from the group consisting of a resistor, a capacitor, and an inductor formed of a thin film or a mixture of an inorganic filler and a thermosetting resin. It is desirable. This is because a thin film can provide a passive component having excellent performance. Further, a film-like component made of an inorganic filler and a thermosetting resin is easy to manufacture and has excellent reliability.

In the component built-in module of the present invention, it is preferable that the film-like passive component is a solid electrolytic capacitor comprising at least an oxide layer of aluminum or tantalum and a conductive polymer.

Further, in the method for manufacturing a component built-in module according to the present invention, a mixture comprising at least an inorganic filler and an uncured thermosetting resin is processed into a sheet, and the inorganic filler and the uncured thermosetting resin are processed. A through-hole is formed in a sheet-like material comprising: a conductive resin is filled into the through-hole; an active component and / or a passive component is mounted on the copper foil; By positioning and stacking a sheet-like material filled with a conductive resin in the through-hole, further laying a copper foil, burying the passive component and / or the active component in the sheet-like material, and applying heat and pressure, The thermosetting resin and the conductive resin in the sheet material are cured, and then the outermost layer copper foil is processed to form a wiring pattern to form a core layer, and the inorganic filler and thermosetting in an uncured state Resin A through-hole is formed in a mixture sheet or an organic film having an adhesive layer formed on both surfaces thereof, and a mixture sheet or an organic film filled with a conductive resin in the through-hole on at least one surface of the core layer and the copper foil are positioned. It is characterized by being integrated by stacking and heating and pressurizing, and processing the copper foil to form a wiring pattern.

According to this method, active components such as semiconductors and passive components such as chip resistors and chip capacitors can be buried therein by a simple method, and components can be further mounted on an outer layer portion. Module can be realized. In addition, since a wiring pattern can be formed on the surface layer of the core, a higher-density module can be obtained. Furthermore, since the material of the surface layer can be selected, heat conduction, dielectric constant, thermal expansion, and the like can be controlled.

In the method for manufacturing a module with a built-in component according to the present invention, it is preferable that a film-like component is previously formed on the copper foil in the copper foil to be aligned and stacked on the core layer.

Further, in the method of manufacturing a module with a built-in component according to the present invention, a mixture comprising at least an inorganic filler and an uncured thermosetting resin is processed into a sheet, and the inorganic filler and the uncured thermosetting resin are processed. Forming a through-hole in a sheet-like material, filling the through-hole with a conductive resin, forming a wiring pattern on one surface of the release carrier, and forming an active component and / or a passive component on the wiring pattern of the release carrier. The passive component and / or the active component are mounted on the component mounting surface of the release carrier having the component-mounted wiring pattern, with the through-hole filled with a conductive resin filled in a conductive resin. By embedding and integrating the component in the sheet-like material and further applying heat and pressure, the thermosetting resin and the conductive resin in the sheet-like material are cured, and then the outermost layer portion Forming a core layer by peeling the mold carrier, forming a through hole in a mixture sheet composed of an inorganic filler and an uncured thermosetting resin or an organic film having an adhesive layer formed on both surfaces, and forming at least one surface of the core layer. A mixture sheet or an organic film filled with a conductive resin in the through-hole and a release carrier having a wiring pattern formed on one side are aligned, stacked and integrated by heating and pressing, and the release carrier is peeled off. It is characterized by doing.

According to this method, active components such as semiconductors and passive components such as chip resistors and chip capacitors can be embedded in the interior by a simple method, and components can be further mounted in the outer layer portion. Module can be realized. Further, since the formation of the wiring pattern on the surface layer portion can be performed by transfer, a process such as etching after the curing step is not required, which is an industrially simple method.

Further, in the method for manufacturing a module with a built-in component according to the present invention, in the release carrier in which a wiring pattern that is aligned and superimposed on the core layer is formed, a wiring pattern formed in advance on the release carrier may be used. It is preferable that a film component is formed thereon.

Further, in the method for manufacturing a module with a built-in component according to the present invention, the film-shaped component may be at least one selected from the group consisting of a resistor made of a thin film or a mixture of an inorganic filler and a thermosetting resin, a capacitor and an inductor. And
Further, it is preferable that the film component is formed by any one of a vapor deposition method, an MO-CVD method, and a thick film printing method.

Further, in the method of manufacturing a module with a built-in component according to the present invention, a mixture comprising at least an inorganic filler and an uncured thermosetting resin is processed into a sheet, and the inorganic filler and the uncured thermosetting resin are processed. A through-hole is formed in a sheet-like material comprising: a conductive resin is filled into the through-hole; an active component and / or a passive component is mounted on the copper foil; By positioning and stacking a sheet-like material filled with a conductive resin in the through-hole, further laying a copper foil, burying the passive component and / or the active component in the sheet-like material, and applying heat and pressure, The thermosetting resin and the conductive resin in the sheet material are cured, and then the outermost layer copper foil is processed to form a wiring pattern to form a core layer, and the inorganic filler and thermosetting in an uncured state Resin A mixture sheet or an organic film having an adhesive layer formed on both surfaces thereof is formed with a through hole, and at least one surface of the core layer, a mixture sheet or an organic film filled with a conductive resin in the through hole and the copper foil. It is characterized in that after positioning and overlapping and heating and pressurizing and curing, a through hole including a core layer is formed, and a through hole is formed by copper plating.

This makes it possible to use the conventional through-hole technology as it is, based on the core layer in which the components are incorporated, and is extremely industrially effective.

Further, in the method for manufacturing a component built-in module of the present invention, a mixture comprising at least an inorganic filler and an uncured thermosetting resin is processed into a sheet, and the inorganic filler and the uncured thermosetting resin are processed. Forming a through-hole in a sheet-like material, filling the through-hole with a conductive resin, forming a wiring pattern on one surface of the release carrier, and forming an active component and / or a passive component on the wiring pattern of the release carrier. The passive component and / or the active component are mounted on the component mounting surface of the release carrier having the component-mounted wiring pattern, with the through-hole filled with a conductive resin filled in a conductive resin. By embedding and integrating the component in the sheet-like material and further applying heat and pressure, the thermosetting resin and the conductive resin in the sheet-like material are cured, and then the outermost layer portion Forming a core layer by peeling the mold carrier, forming a through hole in a mixture sheet composed of an inorganic filler and an uncured thermosetting resin or an organic film having an adhesive layer formed on both surfaces, and forming at least one surface of the core layer. To
After the mixture sheet or the organic film filled with the conductive resin in the through-hole and the release carrier having a wiring pattern formed on one side thereof are aligned and stacked and heated and cured, the through-hole including the core layer is formed. And a through-hole formed by copper plating.

[0037] This makes it possible to use the conventional through-hole technology as it is, based on the core layer in which the components are incorporated, and is extremely industrially effective.

Further, in the method for manufacturing a component built-in module according to the present invention, a mixture comprising at least an inorganic filler and an uncured thermosetting resin is processed into a sheet, and the inorganic filler and the uncured thermosetting resin are processed. Forming a through-hole in a sheet-like material, filling the through-hole with a conductive resin, forming a wiring pattern on one surface of the release carrier, and forming an active component and / or a passive component on the wiring pattern of the release carrier. A component is mounted, a sheet-like material filled with a conductive resin in the through-hole is aligned and stacked on the component mounting surface of the release carrier having the component-mounted wiring pattern, and a copper foil is further stacked. Heat and pressure are applied in a temperature range where the thermosetting resin is not cured, and the passive component and / or the active component are buried in and integrated with the sheet-like material to form a core layer, and the core layer is separated from the core layer. The carrier is peeled off, and a ceramic substrate having at least two layers of inner vias and wiring patterns formed on at least one surface of the peeled core layer is overlaid and pressed, and the thermosetting resin in the core layer is cured by pressing. It is characterized in that it is bonded to a ceramic substrate.

According to this method, an extremely high-density and small-sized module can be realized as described above. Further, since a ceramic substrate having various performances can be integrated, a higher performance module can be realized.

In the method of manufacturing a component built-in module according to the present invention, it is preferable that a plurality of ceramic substrates having the plurality of wiring patterns and inner vias are simultaneously laminated via a core layer and an adhesive layer. In particular, since different types of ceramic substrates can be laminated at the same time, an extremely simple manufacturing method can be realized.

[0041]

BEST MODE FOR CARRYING OUT THE INVENTION The first aspect of the present invention is as follows.
One or more active components and / or passive components are built into an electrically insulating substrate made of a mixture of an uncured thermosetting resin and a high concentration of an inorganic filler, and a plurality of wiring patterns and It is an object of the present invention to provide a component built-in module in which an electric insulating layer and a plurality of wiring patterns are formed on at least one surface of a core layer having an inner via made of a conductive resin for electrically connecting the wiring patterns.
This module incorporates passive components and active components, and connects the wiring patterns with inner vias made of conductive resin.It also has a multi-layered wiring pattern formed on a core layer containing the components. Thus, a very high-density mounting form can be realized. Further, by selecting the inorganic filler, the thermal expansion coefficient in the plane direction is almost the same as that of the semiconductor, and high thermal conductivity can be imparted. In addition, the module has an elastic modulus at room temperature of an electrical insulating material comprising a mixture containing at least an inorganic filler and a thermosetting resin of the core layer containing at least one active component and / or passive component. The range of 6 to 10 GPa, and the thermosetting resin is made of a thermosetting resin having a plurality of glass transition temperatures, so that even if components having various thermal expansion coefficients are built in, the heat of the built-in component may be reduced. A component built-in module that is resistant to stress from impact can be obtained.

The module with a built-in component of the present invention is a mixture obtained by adding an inorganic filler to a thermosetting resin, and does not need to be fired at a high temperature unlike a ceramic substrate.
It is obtained by heating at a low temperature of about ° C. In addition, compared to conventional resin substrates, since an inorganic filler is added,
There is a special effect that the coefficient of thermal expansion, thermal conductivity, permittivity, and the like can be arbitrarily controlled. Note that a through-hole configuration penetrating the core layer and the multilayer wiring layer may be adopted. Thereby, a component built-in module having extremely low connection resistance between layers can be formed, which is optimal for a micro power supply module having built-in components. Similarly, when a mixture of an inorganic filler and a thermosetting resin is used for a multilayered electrically insulating layer formed on a core layer, the thermal expansion coefficient, thermal conductivity, and dielectric constant are controlled similarly to the core layer. It is possible to do.

In a second aspect, at least one or more active components and / or passive components are incorporated in an electrical insulating material composed of a mixture containing at least an inorganic filler and a thermosetting resin, and a plurality of copper foils are provided. An object of the present invention is to provide a component built-in module having a structure in which a ceramic substrate having a wiring pattern and an inner via is bonded to at least one surface of a core layer having a wiring pattern formed of a plurality of conductive resins and an inner via made of a plurality of conductive resins. As a result, components can be built in at a high density and various performances of the ceramic substrate can be obtained. That is, the ceramic substrate not only allows high-density wiring, but also can control the dielectric constant at a size of about 3 to 10000 and has a high thermal conductivity. There is a special effect that such performance can be used as it is. Further, by using the above-described thermosetting resin having the specific elastic modulus and glass transition temperature range, even ceramic substrates having different performances and physical properties can be laminated without stress, and stress such as thermal shock can be obtained. Therefore, a highly reliable module that does not cause cracks can be realized.

In a third aspect, at least one or more active components and / or passive components are incorporated in an electrical insulating material made of a mixture containing at least an inorganic filler and a thermosetting resin, and a plurality of wiring patterns are provided. A plurality of electrical insulating layers and wiring patterns are formed on at least one surface of a core layer having inner vias made of a plurality of conductive resins, and a film-like active component is formed between the wiring patterns formed on the core layer. The present invention provides a component built-in module having a structure as described above. As a result, components can be embedded at a high density, and a film-like component can be formed on the wiring layer formed on the core layer. Therefore, a component built-in module having an extremely high mounting density can be realized. The film-shaped component is a resistor, a capacitor, or an inductor that takes out a wiring pattern formed on a core layer and uses the electrode as an electrode. be able to.

A fourth aspect relates to a method of manufacturing a component built-in module. That is, a mixture of an inorganic filler and a thermosetting resin in an uncured state is processed into a sheet shape, a through-hole is formed to prepare a sheet-like material filled with a conductive resin, and an active component or a passive component is formed on a copper foil. And the sheet-like material is aligned and overlapped, and furthermore, a copper foil is overlapped, and the passive component or the active component is embedded in the sheet-like material and cured to form a core layer. The wiring pattern is formed by processing the outer layer copper foil. Next, a mixture sheet made of an inorganic filler and a thermosetting resin in an uncured state or a through-hole is formed in an organic film having an adhesive layer formed on both surfaces, and the core layer is formed by filling the through-hole with a conductive resin. The copper foil is aligned and overlapped, and heated and pressurized to be integrated, and the copper foil is further processed to form a wiring pattern.

The fifth aspect relates to a method of manufacturing a component built-in module. That is, a mixture of an inorganic filler and a thermosetting resin in an uncured state is processed into a sheet shape, and a through-hole is formed in the sheet-shaped material made of the inorganic filler and the thermosetting resin in an uncured state, and the through-hole is formed. Is filled with a conductive resin. On the other hand, a wiring pattern is formed on one surface of the release carrier, and active components and / or passive components are mounted on the wiring pattern. Next, a sheet-like material filled with a conductive resin in the through-hole is aligned and overlapped on the component mounting surface of the release carrier having the component-mounted wiring pattern. The passive component and / or the active component are buried in and integrated with the sheet by heating and pressing in a temperature range where the resin does not cure to form a core layer. Further, the release carrier is peeled off from the core layer, and a ceramic substrate having at least two layers of inner vias and wiring patterns formed on at least one surface of the peeled core layer is superposed and pressurized. The curable resin is cured and adhered to the ceramic substrate.

In the above embodiment, the ceramic substrate may be a multilayer capacitor having a high dielectric constant.
Substrates made of various types of ceramic materials may be simultaneously bonded and formed. By bonding a high-permittivity ceramic capacitor and a low-permittivity ceramic substrate for a high-speed circuit to a core layer in which components are embedded, a high-frequency component built-in module can be obtained.

Next, more specific embodiments of the component built-in module and the method of manufacturing the same according to the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view showing the structure of a component built-in module according to the present invention. In FIG. 1, reference numeral 100 denotes a wiring pattern formed on the core layer 105, and 101 denotes a semiconductor bare chip as an active component mounted on the wiring pattern 100. Reference numeral 104 denotes a chip component which is a passive component similarly mounted on the wiring pattern 100, and reference numeral 102 denotes an electric insulating layer made of a composite material in which an inorganic filler and a thermosetting resin are combined. 10
Reference numeral 3 denotes an inner via for electrically connecting the wiring patterns 100 formed on the core layer 105. In addition, 106
Is an electrical insulating layer formed on the core layer 105,
08 and 107 are the uppermost wiring pattern and the inner via, respectively. As shown in FIG. 1, since the semiconductor 101 and the chip component 104 are built-in and components can be further mounted on the wiring pattern 108 on the surface, the module becomes an extremely high-density mounting module.

Examples of the thermosetting resin include an epoxy resin, a phenol resin and a cyanate resin. At this time, as a method of controlling the elastic modulus at room temperature of the thermosetting resin and the glass transition temperature, a method of adding a resin having a low elastic modulus or a low glass transition temperature at room temperature to each resin composition may be used. . Also,
As the inorganic filler, Al ₂ O ₃ , MgO, B
N, AlN, SiO _{2 and the} like can be mentioned. Also,
If necessary, a coupling agent, a dispersant, a coloring agent, and a release agent can be further added to the composite of the inorganic filler and the thermosetting resin.

FIG. 2 is a sectional view showing another configuration of the component built-in module of the present invention. In FIG. 2, reference numeral 209 denotes a through hole formed to penetrate the core layer 205 and the wiring layer formed on the core layer. The through-hole 209 can electrically connect the core layer 205 and the wiring patterns 208 formed on both surfaces of the core layer. Thus, the present invention can be applied to a power supply module requiring a large current. The through hole 209 can be formed by drilling or laser processing, a conductive layer can be formed on the wall of the through hole by electrolytic copper plating, and a wiring pattern can be formed by photolithography and chemical etching. .

FIG. 3 is a sectional view showing another configuration of the component built-in module of the present invention. In FIG. 3, reference numeral 305 denotes an electrical insulating layer formed on the core layer 304;
Is a wiring pattern formed on the electric insulating layer 305. The electric insulating layer 305 can be formed using a photosensitive insulating resin, for example, by laminating a film-like resin or applying a liquid photosensitive resin with a coater or the like.
For example, the photosensitive resin formed in a film shape is opened by processing the inner via 307 by a photolithography method, a wiring layer is formed by electroless copper plating or electrolytic copper plating, and a wiring pattern 306 is formed by an existing photolithography method. Is formed, an electric insulating layer 305 is obtained. Note that by repeating this step, a wiring layer having a multilayer structure is obtained, and the inner via 307 can be formed using the opening formed in the electrical insulating layer 305. Further, by roughening the electric insulating layer before electroless copper plating, it is possible to increase the bonding strength of the copper wiring pattern 306.

FIG. 4 is a sectional view showing another configuration of the component built-in module of the present invention. FIG. 4 shows a wiring pattern 407 formed on a core layer 404 containing a semiconductor 401, an inner via 406, and an electrical insulating layer 405, similarly to FIG.
have. Further, a film-shaped component is formed in which the wiring pattern 407 formed on the core layer 404 is taken out and used as an electrode. 409 is a film-like component representing a resistor, and 408 is
Is a film-like component representing a capacitor. On the core layer 404 in which the components are embedded as described above, the film components 408 and 40 are further added.
An extremely high-density component built-in module in which 9 is formed can be obtained.

FIG. 5 is a sectional view showing another configuration of the component built-in module of the present invention. FIG. 5 shows a core layer 505 containing a semiconductor 501, a sintered inner via 508, a wiring pattern 507, and a ceramic material layer 5 similar to FIG.
Ceramic substrate 509 obtained by co-firing 06
And a sheet-like material 510 having an inner via 511 for electrical connection, and the inner via 5
13 and a wiring pattern 514. On the wiring pattern 514, solder balls 515 are formed, and a high-density component built-in module can be obtained. In this way, a high-performance component built-in module can be obtained by integrating with a ceramic substrate having various performances, which enables high-density wiring.

FIGS. 6A to 6H are cross-sectional views showing the steps of manufacturing the component built-in module. In FIG. 6A, reference numeral 602 denotes a through-hole formed in a sheet-shaped mixture of the above-described inorganic filler and the uncured thermosetting resin, and the inner via 603 is further filled with a conductive paste. Sheet. The processing of the sheet-like material 602 is performed by mixing an inorganic filler and a liquid thermosetting resin to prepare a paste-like kneaded product, or by mixing the inorganic filler with a thermosetting resin whose viscosity has been reduced by a solvent, and forming a paste. A kneaded mixture is prepared. Next, a sheet-like material 602 is obtained by molding the paste-like kneaded material to a certain thickness and performing heat treatment.

The heat treatment is performed in order to remove the tackiness while proceeding the curing slightly and maintaining the flexibility in the uncured state, because the liquid resin has the tackiness when using the liquid resin. In a kneaded product in which a resin is dissolved by a solvent, the above-mentioned solvent is removed, and the tackiness is similarly removed while maintaining flexibility in an uncured state. The through-holes formed in the uncured sheet-like material 602 thus manufactured can be formed by a laser processing method, processing by a mold, or punching processing. In particular, in the laser processing method, a carbon dioxide laser or an excimer laser is effective in terms of processing speed. As the conductive paste, a material in which a powder of gold, silver, or copper is used as a conductive material and a thermosetting resin similar to that of the sheet-shaped material 602 is kneaded can be used. In particular, copper is effective because it has good conductivity and little migration. In addition, as for the thermosetting resin, a liquid epoxy resin is stable in terms of heat resistance.

FIG. 6B shows a state in which a semiconductor 601 and a chip component 604 as active components are mounted on the copper foil 600. At this time, the semiconductor 601 is electrically connected to the copper foil 600 via the conductive adhesive. Copper foil 600
Is from 18 μm to 35 μm produced by electrolytic plating
Thicknesses of the order can be used. In particular, the sheet material 60
In order to improve the adhesiveness with the sheet 2, the contact surface with the sheet-like material 602 is desirably roughened copper foil. Also, adhesiveness,
In order to prevent oxidation, a copper foil surface which has been subjected to a coupling treatment or a tin, zinc, or nickel-plated material can be used.
The conductive adhesive for flip-chip mounting of the semiconductor 601 is:
Similarly, those obtained by kneading gold, silver, copper, silver-palladium alloy, or the like with a thermosetting resin can be used. Also, instead of a conductive adhesive, a bump made of solder or a bump made by a gold wire bonding method is formed in advance on the semiconductor side,
It is also possible to mount the semiconductor 601 using the melting of the solder by heat treatment. It is also possible to use a combination of a solder bump and a conductive adhesive.

Next, in FIG. 6C, reference numeral 600 denotes a separately prepared copper foil. The copper foil 600 on which the sheet-like object 602, the semiconductor 601 and the chip component 604 manufactured by the above-described method are mounted is shown in FIG. 2 shows a state in which they are aligned and overlapped.

Next, FIG. 6D shows a state in which the semiconductor 601 and the chip component 604 are embedded and integrated in the sheet-like material 602 by heating and pressurizing the aligned and stacked products by pressing. I have. The embedding of the components at this time is performed in a state before the thermosetting resin in the sheet-like material 602 is cured, and is further heated and cured to form the sheet-like material 6.
The thermosetting resin of No. 02 and the thermosetting resin of the conductive resin are completely cured. As a result, the sheet-like object 602 and the semiconductor 601, the chip component 604, and the copper foil 600 are mechanically and strongly bonded. Similarly, the electrical connection between the copper foils 600 is performed by curing the conductive paste. Next, as shown in FIG. 6E, the thermosetting resin is cured,
The copper foil on the surface of the substrate in which the semiconductor 601 is embedded and integrated is processed into a wiring pattern 600, and the core layer 605 is manufactured. FIG. 6 (f) shows that, based on the prepared core layer 605, a through-hole is formed in a sheet 606 made of a mixture of an inorganic filler and an uncured thermosetting resin or in an organic film having an adhesive layer formed on both surfaces. Then, the through-holes filled with the conductive paste are aligned and superposed on both surfaces of the core layer 605, and further the copper foil 608 is superposed. By heating and pressing this, wiring layers can be formed on both surfaces of the core layer 605 as shown in FIG. Then, FIG.
As shown in (h), a wiring pattern 609 can be formed from the adhered copper foil 608 by a chemical etching method. As a result, a component built-in module incorporating components can be realized. afterwards,
Although there are processes such as component mounting by soldering and filling with an insulating resin, they are omitted here because they are not essential.

FIGS. 7A to 7I are cross-sectional views showing a method of manufacturing a component built-in module manufactured by using a sheet-like material 704 manufactured in the same manner as in FIG. FIG. 7 (a)
Then, the wiring pattern 701 is placed on the release carrier 700.
And a film-like component 711 which is formed by taking out the wiring pattern 701 and forming an electrode. The release carrier 700 is to be released after transferring the wiring pattern 701 and the film component 711, and an organic film such as polyethylene or polyethylene terephthalate, or a metal foil such as copper can be used. The wiring pattern 701 is formed of the release carrier 700.
Can be formed by adhering a metal foil such as a copper foil via an adhesive, or further formed on the metal foil by an electrolytic plating method or the like. The metal layer formed in the film shape in this manner is subjected to wiring pattern 7 by using an existing processing technique such as a chemical etching method.
01 can be formed. FIG. 7B shows a release carrier 700.
7 shows a state in which a semiconductor 702 and a chip component 703 are mounted on a wiring pattern 701 formed thereon. FIG. 7 (c) shows a sheet-like material 7 made as shown in FIG.
FIG. 7D shows a state in which the through-hole is processed in the same manner as in FIG. 6 and the conductive paste is filled in the inner via 705. In FIG. 7E, the inner via 7 filled with the conductive paste manufactured in this manner is shown.
A state in which the release carrier 700 on which the wiring pattern 701 is formed and the release carrier 700 having components mounted on the release carrier 700 are aligned and overlapped with each other centering on the sheet-like material 704 on which the release 05 is formed. Is shown.
FIG. 7 (f) shows a state in which this is heated and pressed to cure the thermosetting resin in the sheet-like material 704 and the release carrier 700 is peeled off. By this heating and pressurizing step, the semiconductor 702 and the chip component 703 are buried in the sheet 704 and integrated. At this time, the semiconductor 702 and the chip component 703 are buried in a state before the thermosetting resin in the sheet material 704 is cured.
Further heating and curing, the thermosetting resin of the sheet-like material 704 and the thermosetting resin of the conductive paste are completely cured. Thereby, the sheet-like object 704 and the semiconductor 70
2 and the wiring pattern 701 are mechanically firmly adhered. Similarly, the electrical connection of the wiring pattern 701 is performed by curing the conductive paste of the inner via 705. At this time, the thickness of the wiring pattern 701 on the release carrier 700 is determined in advance by the sheet-like material 704.
Is further compressed, and the wiring pattern 701 is also
4 buried. As a result, the component built-in core layer 706 having a smooth wiring pattern and module surface can be formed.

Next, FIG. 7 (g) is a view centering on the core layer 706 with a built-in component manufactured as described above.
The multi-layer module as shown in FIG. 7H is obtained by aligning and stacking the sheet-like material 707 produced as shown in FIG. 7D and the release carrier 710 on which the film-like component 711 is formed, and applying heat and pressure. Can be made. Finally, the release carrier 710 is peeled off as shown in FIG. 7 (i) to complete the multilayer module of the present invention. By using the core layer in which the semiconductor and the chip components are incorporated and the release carrier in which the wiring pattern and the film component are formed as described above, a component built-in module having a higher density and incorporating various functions can be obtained.

FIGS. 8A to 8D are cross-sectional views showing a method of manufacturing a component built-in module obtained by laminating a multilayer ceramic substrate. FIG. 8A shows a core layer 805 incorporating the components shown in FIG. Then, FIG.
(B) shows the core layer 805 and the multilayer ceramic substrate 80.
9, a sheet-like object 810 having an inner via 811 formed thereon and a sheet-like object 812 having an inner via 813 formed therein are also aligned as shown in the drawing, and the copper foil 814 is further overlapped. Is shown. Next, FIG.
As shown in (c), when the laminate is heated and pressed, the thermosetting resin in the sheets 810 and 812 is cured, and the core layer 805, the multilayer ceramic substrate 809, and the copper foil 814 are mechanically Strongly adheres. And FIG.
As shown in (d), by finally processing the copper foil 814 to form a wiring pattern and providing solder balls 815,
A component built-in module in which the multilayer ceramic and the component built-in core layer are integrated is completed. The multilayer ceramic wiring board is manufactured using a green sheet made of a low-temperature fired board material containing glass and alumina as main components. That is, a through-hole is formed in a green sheet made of a ceramic material that can be fired at about 900 ° C., and the through-hole is filled with a conductive paste made of a highly conductive powder such as copper or silver. It is obtained by printing with the conductive paste of the above, laminating a plurality of green sheets thus produced, and further firing. The ceramic substrate material thus manufactured may be a high dielectric constant material containing barium titanate as a main component, a high thermal conductive material containing aluminum nitride as a main component, or the like, depending on the purpose. The outermost wiring pattern may be formed, or only the inner via may be formed without forming the wiring pattern. FIG.
In (a) to (d), one ceramic substrate is used. However, a plurality of substrates made of the above-described various types of ceramic materials may be simultaneously laminated in a sheet form.

[0063]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments.

(Example 1) In producing a component built-in module of the present invention, a method for producing a sheet-like material using an inorganic filler and a thermosetting resin will be described first. In order to produce the sheet material used in the present example, first, an inorganic filler and a liquid thermosetting resin are mixed by a stirring mixer. The stirring and mixing machine used is to add an inorganic filler, a thermosetting resin, and a solvent for viscosity adjustment as necessary to a container having a predetermined capacity, and revolve while rotating the container itself. Even if it is high, a sufficient dispersion state can be obtained. Tables 1 and 2 show the composition of the sheet-like material for the built-in component module.

[0065]

[Table 1]

[0066]

[Table 2]

In a specific manufacturing method, a predetermined amount of a paste-like mixture weighed and mixed with the above composition is taken and dropped on a release film. As for the mixing conditions, a predetermined amount of the inorganic filler and the epoxy resin were charged into a container, and the entire container was mixed with a kneader. The kneading machine is performed by a method of rotating the container while revolving, and the kneading is performed in a short time of about 10 minutes. In addition, a polyethylene terephthalate film having a surface having a thickness of 75 μm and subjected to a release treatment with silicon was used as a release film. A release film was further superimposed on the mixture on the release film that had been dropped, and pressed to a constant thickness by a pressure press.
Next, the release film on one side was peeled off, and the mixture was heated together with the release film to remove the solvent and heat-treated under the condition that tackiness was lost. The heat treatment conditions are as follows.
Hold for 5 minutes. Thereby, the mixture has a thickness of 50
A sheet having a thickness of 0 μm and having no tackiness is obtained. Since the thermosetting epoxy resin has a curing start temperature of 130 ° C.,
It is in an uncured state (B stage) under the heat treatment conditions, and can be melted again by heating in the subsequent steps.

In order to evaluate the physical properties of the sheet-like material thus produced, a hot press was performed to prepare a cured product of the sheet-like mixture, and the elastic modulus and glass transition temperature of the cured product were measured. The conditions of the hot press were such that the prepared sheet was sandwiched between release films and hot-pressed at 200 ° C. for 2 hours at a pressure of 4.9 MPa. The elastic modulus and glass transition point (Tg) of the cured product at room temperature are shown in Tables 1 and 2, and the temperature characteristic of the elastic modulus is shown in FIG. The modulus of elasticity of the cured product at room temperature is from about 0.7 GPa to about 8 GPa as shown in Tables 1 and 2, and 36.5 GPa as a comparative example.
An epoxy resin was also prepared. Also, as in Example 2, a mixture of epoxy resins having different glass transition temperatures was evaluated. The glass transition temperature was determined from Tan δ, which indicates the viscous behavior of the elastic modulus based on the temperature characteristics of the elastic modulus E ′, as shown in FIG. FIG. 10 shows the temperature characteristics of the elastic modulus E ′ of Example 2. It can be seen from the inflection point of Tan δ that the glass transition points of this mixture are 50 ° C. and 130 ° C., respectively.

An uncured sheet having the above-mentioned physical properties is cut into a predetermined size, and a carbon dioxide laser is used to cut the sheet having a diameter of 0.15 mm at equally spaced positions of 0.2 mm to 2 mm. A through hole was formed. In this through hole,
As conductive paste for filling via holes, average particle size 2μ
85% by mass of spherical copper particles of m, 3% by mass of a bisphenol A type epoxy resin ("Epicoat 828" manufactured by Yuka Shell Epoxy) as a resin composition, and a glycidyl ester epoxy resin ("YD-171" manufactured by Toto Kasei) ) 9 mass% and 3 mass% of an amine adduct curing agent (manufactured by Ajinomoto "MY-24") as a curing agent were kneaded with a three-roll mill and filled by screen printing (FIG. 6 (a)).
reference). Next, the semiconductor 601 and the chip component 604 are flip-chip mounted on a copper foil 600 having a roughened surface of 35 μm with a conductive adhesive made of silver powder and epoxy resin. The copper foil 600 on which the semiconductor fabricated in this manner is mounted and a separately prepared single-sided roughened 35 μm thick film
Copper foil 600 is positioned and sandwiched between sheet-like objects. At this time, the roughened surface of the copper foil was arranged on the sheet-like material side. Next, using a hot press, heating and pressing are performed at a pressing temperature of 120 ° C. and a pressure of 0.98 MPa for 5 minutes. This allows
Since the thermosetting resin in the sheet 602 is melted and softened by heating, the semiconductor 601 and the chip component 604 are buried in the sheet. Further, the heating temperature was increased and maintained at 175 ° C. for 60 minutes. As a result, the epoxy resin in the sheet-like material and the epoxy resin in the conductive resin are cured, the sheet-like material and the semiconductor and the copper foil are mechanically and strongly bonded, and the conductive paste is electrically connected to the copper foil. (Inner via connection), a mechanically bonded core layer 605 is obtained. The copper foil on the surface of the core layer 605 in which the semiconductor is embedded is etched by an etching technique to form an electrode pattern and a wiring pattern 600 having a diameter of 0.2 mm on the inner via hole.

Using the core layer 605 thus manufactured, multilayering is performed. The used sheet material has a thickness of 2
An epoxy resin (“Nippon-Rek“ E ”
F-450 ″) was applied to a thickness of 5 μm, and drilled using a carbon dioxide laser beam machine. The processed hole diameter was 100 μm, and the hole filled with the conductive paste was used. (Refer to FIG. 6 (f).) A sheet-like material having an adhesive layer formed on the organic film produced in this manner is aligned and superimposed on both surfaces of the core layer 605, and is further subjected to a one-side roughening treatment to a thickness of 18 μm. And the copper foil 608 was heated and pressed, and the uppermost copper foil 608 was patterned to obtain a component built-in module.

As a reliability evaluation of the component built-in module manufactured by this method, a moisture absorption reflow test and a thermal shock test (temperature cycle test) were performed. In the moisture absorption reflow test, a module with a built-in component maintained at a temperature of 85 ° C. and a humidity of 85% for 168 hours was tested at a maximum temperature of 240 ° C. for 20 minutes.
The test was performed by passing once through a belt-type reflow tester for one second. In addition, the thermal shock test was performed at a temperature of 125 ° C. on the high temperature side and −40 ° C. on the low temperature side for 30 minutes each, and 1000 cycles were performed.

As an evaluation after each test, if the resistance value of the inner via connection formed in the component built-in core (100 inner vias are connected in series) is within ± 10%, it is regarded as a non-defective product. Those with increased connection resistance were regarded as defective. The evaluation criteria for the built-in component are those that have no breakage of the joint surface of the built-in component and no deterioration of the component performance.
It was determined to be defective when it changed by 0% or more or when component performance changed. At this time, no cracks were generated in the semiconductor module in terms of shape, and no particular abnormality was recognized in the ultrasonic flaw detector. As built-in components, a chip resistor (20 pieces), a chip capacitor (20 pieces), and a test semiconductor (one chip: 30 connection terminals) were used. Table 3 shows the results of the reliability evaluation.

[0073]

[Table 3]

As is clear from Table 3, when the elastic modulus at room temperature is in the range of 0.6 GPa to 10 GPa, good reliability can be obtained. Especially in the comparative example,
Since the elastic modulus at room temperature is high, inner via connection and deterioration of built-in components are conspicuous due to stress stress at the time of thermal shock. This is presumably because if the elastic modulus is high with respect to the stress caused by the difference between the respective thermal expansion coefficients, the stress becomes high, and the component connecting portion where the stress is concentrated is disconnected. Further, in the comparative example, since the glass transition temperature is high, it is considered that the elastic modulus is high even at a high temperature. In contrast, in Examples 1 to 3,
Relatively high reliability is obtained. In particular, in Example 2 using two types of epoxy resins having different elastic moduli, even if the elastic modulus at room temperature is not so low, the elastic modulus greatly decreases with increasing temperature (see FIG. 10). It is thought that it can be retained. Further, the electrical insulating material of Example 1, which has the lowest elastic modulus at room temperature, has good performance in the thermal shock test, but is somewhat inferior in the reflow test in the moisture absorbing state. This is a degree of reliability that does not cause any problem in practical use, but a substance having a lower elastic modulus than this has a large moisture absorption, and thus poses a problem in a moisture absorption reflow test. Therefore, it is clear that it is better to use an epoxy resin having a plurality of elastic moduli and glass transition temperatures as in Example 2 in order to obtain better reliability.

From this, it can be seen that a strong adhesion between the semiconductor and the module has been obtained. The inner via connection resistance due to the conductive paste was almost unchanged from the initial performance in both the core layer and the wiring layer.

(Embodiment 2) An embodiment of a module incorporating a semiconductor using the same sheet-like material as in Example 2 of Embodiment 1 will be described.

A 500 μm-thick sheet-like material 7 in which a conductive paste was filled in through holes produced under the same conditions as in Example 1.
04 was prepared (see FIG. 7D). Next, thickness 70μ
m was used as a release carrier, and copper having a thickness of 9 μm was formed on the release carrier by electrolytic copper plating. A wiring pattern is formed using this release carrier. The release carrier on which copper having a thickness of 9 μm is formed is chemically etched by a photolithography method, and the wiring pattern 7 shown in FIG.
01 is formed. The semiconductor and the chip component were flip-chip mounted on the release carrier with the wiring pattern thus manufactured by using solder bumps. Further, a film component was formed by printing on a release carrier having another wiring pattern. The film component 711 is a resistor paste in which carbon powder is mixed with a thermosetting resin. Printing was performed by an existing screen printing method.

The release carrier on which the semiconductor fabricated in this way is mounted and the release carrier having only a separately prepared wiring pattern are positioned and sandwiched between the sheet-like material 704 filled with the conductive paste. At this time, the wiring pattern was arranged so as to be on the sheet-like material side. This is heated and pressed at a pressing temperature of 120 ° C. and a pressure of 0.98 MPa for 5 minutes using a hot press. Thereby, the sheet-like material 70
Because the thermosetting resin in 4 melts and softens by heating,
The semiconductor 702 and the chip component 703 are buried in the sheet. Further, the heating temperature was increased and maintained at 175 ° C. for 60 minutes. As a result, the epoxy resin in the sheet material and the epoxy resin in the conductive paste are hardened, and the sheet material and the semiconductor and the wiring pattern are mechanically and strongly bonded. Further, the conductive paste is electrically (inner via connected) and mechanically bonded to the wiring pattern 701. Next, the release carrier on the surface of the cured product in which the semiconductor was embedded was peeled off. Since the release carrier has a glossy surface and the wiring layer is formed by electrolytic plating, only the copper foil as the release carrier can be peeled off. In this state, a core layer 706 containing the components was formed. Next, a wiring layer is further formed using the core layer 706. In this method, since the release carrier in which the wiring pattern is formed in advance is used, the cured module becomes a flat core layer in which the wiring pattern is embedded in the module. As a result, a fine multilayer wiring can be formed on the surface of the core layer. Similarly, by embedding the wiring pattern, the sheet-like material is compressed by the thickness of the wiring pattern on the surface. As a result, a reliable electrical connection of the conductive paste can be obtained.

Next, a multilayer wiring layer is further formed by using the present core layer containing the semiconductor and the chip component. A 100 μm-thick sheet material filled with the conductive paste prepared in Example 1 on both surfaces of the core layer was used.
Using a release carrier 700 having a wiring pattern 701 with 11 formed thereon, it is sandwiched as shown in FIG. This is heated and pressurized under the same conditions as described above, and cured to form a wiring pattern 701 and a film component 7 on the core layer and the release carrier.
11 are integrated. Furthermore, after curing, the release carrier 71
By peeling 0, the component built-in module of the present invention is obtained. By using the release carrier in this way, a wet process such as chemical etching is not required at the time of manufacturing the substrate,
A fine wiring pattern can be easily obtained. Further, in the case of a release carrier using an organic film, the mounting performance can be evaluated before the components are built in, so that there is a special effect that a defective component can be repaired on the release carrier.

As a reliability evaluation of the component built-in module manufactured by this method, a moisture absorption reflow test and a thermal shock test (temperature cycle test) were performed. The moisture absorption reflow test and the thermal shock test were performed under the same conditions as in Example 1.
At this time, no crack was generated in the semiconductor module in terms of shape, and no particular abnormality was recognized in the ultrasonic flaw detector.
As a result, it can be seen that a strong adhesion between the semiconductor and the module is obtained. The inner via connection resistance, built-in component connection and component performance due to the conductive paste were almost unchanged from the initial performance.

(Embodiment 3) An embodiment in which a higher-density module is manufactured using a core layer containing a semiconductor and a multilayer ceramic substrate using the same sheet-like material as in Example 2 of Embodiment 1 will be described.

Semiconductor 80 fabricated under the same conditions as in Example 1.
2 was used (see FIG. 8A). The thickness of the core layer is 300 μm. Next, the multilayer ceramic substrate 809 and the core layer 805 are laminated with an adhesive layer. The ceramic multilayer wiring board is a 220 μm thick green sheet (“M” manufactured by NEC Corporation) made of a low-temperature fired board material mainly composed of glass and alumina.
LS-1000 "). That is, the multilayer wiring board is formed by punching a hole having a diameter of 0.2 mm as a through hole in the present green sheet by a puncher, and forming a silver powder having an average particle diameter of 2 μm in the through hole. And a conductive paste obtained by mixing an ethylcellulose resin and a terpineol solvent, and forming a wiring pattern by printing the same conductive paste. It was manufactured by laminating at a temperature of ℃ and a pressure of 4.9 MPa, and further firing at 900 ℃ for 1 hour.

Next, through-holes were formed in the sheet-like material prepared as in Example 1, and 100 μm-thick sheet-like materials 810 and 812 filled with a conductive paste were prepared.
The core layer 805 and the multilayer ceramic substrate 809 are shown in FIG.
As shown in (b), the modules are aligned, stacked, and heated and pressed to produce an integrated module. At this time, a copper foil 814 may be overlaid on and integrated with the lowermost sheet.
The wiring pattern may be transferred using a release carrier on which a film component is formed as shown in FIG. In addition, a solder ball can be mounted on the wiring pattern of the module formed as described above to form a connection terminal.

As a reliability evaluation of the component built-in module manufactured by this method, the same moisture absorption reflow test and thermal shock test (temperature cycle test) as in Example 1 were performed.
At this time, although the semiconductor module was a composite module laminated with a ceramic substrate, no crack was generated even in shape, and no particular abnormality was recognized even in the ultrasonic flaw detector. As a result, it can be seen that a strong adhesion between the semiconductor and the module is obtained.

Further, in order to evaluate the impact resistance of the module, the drop strength at which the module was dropped from a height of 1.8 m was evaluated. Specifically, the completed module was mounted on a glass epoxy substrate by soldering, set in an aluminum container, dropped on concrete, and examined for damage to the module. In the case of only the ceramic substrate manufactured as a comparative example, cracks occurred in half, but no crack occurred in the module of Example 3. From this, it is considered that the sheet-like material has a function as a stress relaxation layer which cannot be obtained only with the ceramic substrate, and it can be said that the present invention is a special effect.

The inner via connection resistance due to the conductive paste hardly changed from the initial performance.

[0087]

As described above, according to the module with a built-in component of the present invention, by using a sheet made of a mixture of a thermosetting insulating resin and a high concentration of an inorganic filler,
An active component and / or a passive component can be buried inside, and a multilayer pattern of a wiring pattern and an electric insulating layer can be simultaneously formed on at least one surface thereof, so that an extremely high-density module can be realized. Further, by selecting the inorganic filler, it is possible to control the thermal conductivity, the thermal expansion coefficient, and the dielectric constant. This makes it possible to make the thermal expansion coefficient in the plane direction substantially the same as that of the semiconductor, and is also effective as a substrate on which the semiconductor is directly mounted. Further, by improving the thermal conductivity, it is also effective as a substrate on which a semiconductor or the like requiring heat radiation is mounted. In addition, the dielectric constant can be lowered, which is also effective for a low-loss substrate for a high-frequency circuit. In addition, by setting the elastic modulus at room temperature and the glass transition temperature of the thermosetting resin to specific ranges, a component built-in module having high reliability against thermal stress such as a thermal shock test can be realized.

Further, according to the method of manufacturing a component built-in module of the present invention, a mixture containing an inorganic filler and an uncured thermosetting resin is processed into a sheet-like material to form a through hole, and the conductive resin is formed. A filled sheet-like material was prepared, a wiring pattern was formed on one side of a release carrier, and an active component or a passive component was mounted thereon. The module with a built-in component of the present invention can be obtained by superimposing the wiring pattern surface of the release carrier having the wiring pattern on the mold carrier inside, embedding and integrating in the sheet material, and curing by heating and pressing. Further, at this time, a film-like component which is used as an electrode by taking out the wiring pattern formed on the release carrier can be formed at the same time. Thus, a very high-density module incorporating active and passive components can be realized by a simple method, and a wiring pattern can be embedded in the sheet-like material, so that a module with a smooth surface can be realized. Accordingly, since there is no step in the wiring pattern on the surface of the module of the present invention, components can be mounted at a higher density.

The method for manufacturing a component built-in module having a multilayer structure according to the present invention not only can incorporate active components such as semiconductors and passive components such as chip resistors, but also can simultaneously form a multilayer ceramic substrate in an inner layer. A high-density module can be realized. Further, since a plurality of ceramic substrates having various performances can be laminated at the same time, an extremely high-performance module can be realized.

As described above, according to the present invention, an active component or a passive component can be incorporated in a module, and wiring patterns can be connected by inner vias. Therefore, an extremely high-density module can be realized by a simple method.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a component built-in module having a multilayer structure according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a component built-in module having a multilayer structure according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view of a component built-in module having a multilayer structure according to an embodiment of the present invention.

FIG. 4 is a cross-sectional view of a component built-in module having a multilayer structure according to an embodiment of the present invention.

FIG. 5 is a sectional view of a component built-in module having a multilayer structure according to an embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a manufacturing process of the component built-in module having a multilayer structure according to one embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a manufacturing process of the component built-in module having a multilayer structure according to one embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a manufacturing process of the component built-in module having a multilayer structure according to one embodiment of the present invention.

FIG. 9 is a diagram showing the temperature characteristics of the elastic modulus of the electrical insulating material of the component built-in module.

FIG. 10 is a diagram showing the elastic modulus E ′ and Tan δ of an electric insulating material which is one embodiment of the component built-in module of the present invention.

[Explanation of symbols]

100, 108, 200, 208, 300, 306, 4
00, 407, 500, 504, 507, 514, 60
9, 701, 709, 801, 807 Wiring pattern 101, 201, 301, 401, 501, 601, 7
02, 802 Semiconductors 102, 106, 202, 206, 302, 305, 4
02, 405, 502, 803 Electrical insulating layers 103, 107, 207, 303, 307, 403, 4
06, 503, 508, 511, 513, 603, 60
7, 705, 708, 804, 808, 811, 813
Inner vias 104, 204, 604, 703, Chip components 105, 205, 304, 404, 505, 605, 7
06, 805 Core layer 209 Through-hole 408 Capacitor 409 Resistor 506, 806 Ceramic material layer 509, 809 Multi-layer ceramic substrate 510, 512, 602, 606, 704, 707, 8
10, 812 Sheet-like material 515, 815 Solder ball 600, 608, 814 Copper foil 700, 710 Release carrier 711 Film-like component

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/12 H05K 1/11 N 23/14 1/18 R 25/04 3/40 K 25/18 H01L 23/12 B H05K 1/11 23/14 R 1/18 25/04 Z 3/40 (72) Inventor Toshiyuki Asahi 1006 Kazuma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Shin Komatsu 5 1006 Kadoma, Kazuma, Kazuma, Osaka Prefecture F-term (reference) 5E317 AA24 BB01 BB12 CC22 CC25 CD32 CD34 GG16 5E336 AA08 BB03 BB15 BC26 BC34 CC31 CC51 CC55 GG03 GG14 5E346 AA04 AA12 AA15 A32 CC08 CC32 DD02 DD12 DD32 EE02 EE06 EE09 EE13 EE19 EE41 FF18 FF35 FF45 GG22 GG27 GG28 GG40 HH11 HH17 HH33

Claims (21)

[Claims] 1. A core layer made of an electrical insulating material, and said core
Electrical insulation layer and multiple wiring patterns on at least one side of the layer
A component built-in module comprising:
Electrical insulation is at least inorganic filler and thermosetting resin
Formed from a mixture containing
Both include one or more active and / or passive components,
The core layer includes a plurality of wiring patterns and a conductive resin
It has a plurality of inner vias, and at least the core layer
Also consists of a mixture containing an inorganic filler and a thermosetting resin
The elasticity of the electrical insulating material at room temperature is 0.6 to 10 GPa.
A component built-in module characterized by being in the range of. 2. A component built-in module comprising: a core layer made of an electrical insulating material; and an electrical insulating layer and a plurality of wiring patterns on at least one surface of the core layer, wherein the electrical insulating material of the core layer is made of at least an inorganic material. Formed from a mixture containing a filler and a thermosetting resin, at least one or more active components and / or passive components are built in the core layer,
The core layer has a plurality of wiring patterns and a plurality of inner vias made of a conductive resin, the elastic modulus at room temperature of an electrical insulating material of the core layer made of a mixture containing at least an inorganic filler and a thermosetting resin. A component built-in module which is in a range of 0.6 to 10 GPa and wherein the thermosetting resin is made of a thermosetting resin having a plurality of glass transition temperatures. 3. A component built-in module comprising a core layer made of an electric insulating material, and an electric insulating layer and a plurality of wiring patterns on at least one surface of the core layer, wherein the electric insulating material of the core layer is at least an inorganic material. Formed from a mixture containing a filler and a thermosetting resin, incorporating at least one or more active components and / or passive components inside the core layer,
The core layer has a plurality of wiring patterns and a plurality of inner vias made of a conductive resin, the elastic modulus at room temperature of an electrical insulating material of the core layer made of a mixture containing at least an inorganic filler and a thermosetting resin. 0.6 to 10 GPa, and the thermosetting resin is at least −20 ° C.
A module with a built-in component, comprising: a thermosetting resin having a glass transition temperature in a range of from 70 ° C to 60 ° C; and a thermosetting resin having a glass transition temperature in a range of from 70 ° C to 170 ° C. 4. The module with a built-in component according to claim 1, wherein a through-hole passing through all of said core layer, said electrical insulating layer and said wiring pattern is formed. . 5. A core layer made of an electrical insulating material, an electrical insulating layer made of an electrical insulating material formed on at least one side of the core layer from a mixture containing an inorganic filler and a thermosetting resin, and a plurality of copper foils The component built-in module according to any one of claims 1 to 3, further comprising: a wiring pattern formed of a plurality of copper foils and a plurality of inner vias formed of a conductive resin. And a component built-in module in which the wiring pattern is electrically connected by the inner via. 6. A core layer made of an electric insulating material, an electric insulating layer made of an electric insulating material formed on at least one surface of the core layer from a thermosetting resin, and a plurality of wiring patterns made of copper plating. The component built-in module according to any one of claims 1 to 3, wherein the core layer has a wiring pattern made of a plurality of copper foils and a plurality of inner vias made of a conductive resin, and is made of the copper plating. A component built-in module in which a wiring pattern is electrically connected by the inner via. 7. A core layer made of an electric insulating material, an electric insulating layer made of an organic film having a thermosetting resin formed on at least one surface of at least one surface of the core layer, and a plurality of wiring patterns made of a copper foil. The component built-in module according to any one of claims 1 to 3, wherein the core layer has a wiring pattern made of a plurality of copper foils and a plurality of inner vias made of a conductive resin, and the wiring pattern is A component built-in module electrically connected by the inner via. 8. The component built-in module according to claim 1, wherein a core layer made of an electrically insulating material and a ceramic substrate having a plurality of wiring patterns and inner vias are adhered to at least one surface of said core layer. The component built-in module, wherein the core layer has a wiring pattern made of a plurality of copper foils and a plurality of inner vias made of a conductive resin. 9. A core layer made of an electrically insulating material and a plurality of ceramic substrates having a plurality of wiring patterns and inner vias bonded to at least one surface of the core layer.
4. The component built-in module according to any one of claims 1 to 3,
A component built-in module, wherein the core layer has a wiring pattern made of a plurality of copper foils and a plurality of inner vias made of a conductive resin, and the plurality of ceramic substrates are made of a dielectric material having a different dielectric constant. 10. The component built-in module according to claim 1, wherein a film-like passive component is arranged between said wiring patterns formed on at least one surface of said core layer. 11. The built-in component according to claim 10, wherein the film-like passive component is at least one selected from the group consisting of a resistor, a capacitor, and an inductor made of a thin film or a mixture of an inorganic filler and a thermosetting resin. module. 12. The component built-in module according to claim 10, wherein the film-like passive component is a solid electrolytic capacitor made of at least an oxide layer of aluminum or tantalum and a conductive polymer. A mixture comprising at least an inorganic filler and an uncured thermosetting resin is processed into a sheet,
Forming a through-hole in a sheet-like material made of the inorganic filler and an uncured thermosetting resin, filling the through-hole with a conductive resin, mounting an active component and / or a passive component on a copper foil, A sheet-like material filled with a conductive resin in the through-hole is aligned and overlapped on the component mounting surface of the component-mounted copper foil. By embedding in an object and applying heat and pressure, the thermosetting resin and the conductive resin in the sheet-shaped object are cured, and then the outermost layer copper foil is processed to form a wiring pattern, thereby forming a core layer. Create and form through-holes in an organic film with an inorganic filler and an adhesive layer formed on both surfaces or a mixture sheet composed of an uncured thermosetting resin,
At least one surface of the core layer and the copper foil and the mixture sheet or organic film filled with the conductive resin in the through-holes are aligned and integrated by heating and pressing,
A method for manufacturing a component built-in module, wherein a wiring pattern is formed by processing the copper foil. 14. The method for manufacturing a component built-in module according to claim 13, wherein a film-like component is previously formed on the copper foil in the copper foil to be aligned and stacked on the core layer. 15. Processing a mixture comprising at least an inorganic filler and a thermosetting resin in an uncured state into a sheet,
Forming a through-hole in a sheet-like material comprising the inorganic filler and the thermosetting resin in an uncured state, filling the through-hole with a conductive resin, forming a wiring pattern on one surface of a release carrier, An active component and / or a passive component is mounted on a wiring pattern of a carrier, and a sheet-like material in which the through-hole is filled with a conductive resin is positioned on a component mounting surface of the release carrier having the component-mounted wiring pattern. By stacking together, the passive component and / or the active component are embedded and integrated in the sheet-like material, and further heated and pressed, thereby curing the thermosetting resin and the conductive resin in the sheet-like material, The core layer is formed by peeling off the release carrier of the outermost layer portion, and penetrating through an organic film in which an inorganic filler and a thermosetting resin in an uncured state are formed on a mixture sheet or an adhesive layer formed on both surfaces. Forming a mixture sheet or an organic film filled with the conductive resin in the through-holes on at least one surface of the core layer, and a release carrier having a wiring pattern formed on one surface thereof, and superposing and heating and pressing. And releasing the release carrier. 16. The release carrier in which a wiring pattern positioned and superimposed on the core layer is formed,
The method for manufacturing a module with a built-in component according to claim 15, wherein a film-like component is formed on the wiring pattern formed on the release carrier in advance. 17. The film component is at least one selected from the group consisting of a resistor, a capacitor, and an inductor made of a thin film or a mixture of an inorganic filler and a thermosetting resin, and the film component is formed by vapor deposition. 17. The method for manufacturing a component built-in module according to claim 14, wherein the module is formed by any one of a method, an MO-CVD method, and a thick film printing method. 18. A mixture comprising at least an inorganic filler and an uncured thermosetting resin is processed into a sheet,
Forming a through-hole in a sheet-like material made of the inorganic filler and an uncured thermosetting resin, filling the through-hole with a conductive resin, mounting an active component and / or a passive component on a copper foil, A sheet-like material filled with a conductive resin in the through-hole is aligned and overlapped on the component mounting surface of the component-mounted copper foil. By embedding in an object and applying heat and pressure, the thermosetting resin and the conductive resin in the sheet-shaped object are cured, and then the outermost layer copper foil is processed to form a wiring pattern, thereby forming a core layer. Create and form through-holes in an organic film with an inorganic filler and an adhesive layer formed on both surfaces or a mixture sheet composed of an uncured thermosetting resin,
After at least one surface of the core layer, the mixture sheet or the organic film filled with the conductive resin in the through hole and the copper foil are aligned and stacked and heated and cured, the through hole including the core layer is formed. And forming a through-hole by copper plating. 19. A sheet comprising a mixture comprising at least an inorganic filler and an uncured thermosetting resin,
Forming a through-hole in a sheet-like material comprising the inorganic filler and the thermosetting resin in an uncured state, filling the through-hole with a conductive resin, forming a wiring pattern on one surface of a release carrier, An active component and / or a passive component is mounted on a wiring pattern of a carrier, and a sheet-like material in which the through-hole is filled with a conductive resin is positioned on a component mounting surface of the release carrier having the component-mounted wiring pattern. By stacking together, the passive component and / or the active component are embedded and integrated in the sheet-like material, and further heated and pressed, thereby curing the thermosetting resin and the conductive resin in the sheet-like material, The core layer is formed by peeling off the release carrier of the outermost layer portion, and penetrating through an organic film in which an inorganic filler and a thermosetting resin in an uncured state are formed on a mixture sheet or an adhesive layer formed on both surfaces. And a mixture sheet or an organic film in which the through-hole is filled with a conductive resin and a release carrier having a wiring pattern formed on one side thereof are aligned on at least one surface of the core layer, and are heated and pressed. A method of manufacturing a module with a built-in component, comprising: forming a through hole including a core layer after curing; and forming a through hole by copper plating. 20. processing a mixture comprising at least an inorganic filler and an uncured thermosetting resin into a sheet,
Forming a through-hole in a sheet-like material comprising the inorganic filler and the thermosetting resin in an uncured state, filling the through-hole with a conductive resin, forming a wiring pattern on one surface of a release carrier, An active component and / or a passive component is mounted on a wiring pattern of a carrier, and a sheet-like material in which the through-hole is filled with a conductive resin is positioned on a component mounting surface of the release carrier having the component-mounted wiring pattern. Combine and stack, and further stack copper foil and heat and press in a temperature range where the thermosetting resin does not cure, bury the passive components and / or active components in the sheet-like material and integrate them to form a core layer Then, the release carrier is peeled from the core layer, and a ceramic substrate having at least two layers of inner vias and wiring patterns formed on at least one surface of the peeled core layer is pressed and pressed. Method for producing a component built-in module, characterized in that adhering to the ceramic substrate by curing the thermosetting resin of the core layer. 21. The method according to claim 20, wherein a plurality of the ceramic substrates having the plurality of wiring patterns and the inner vias are simultaneously laminated via a core layer and an adhesive layer.