JP2002252257A - Semiconductor carrier film and its manufacturing method - Google Patents
Semiconductor carrier film and its manufacturing methodInfo
- Publication number
- JP2002252257A JP2002252257A JP2001063551A JP2001063551A JP2002252257A JP 2002252257 A JP2002252257 A JP 2002252257A JP 2001063551 A JP2001063551 A JP 2001063551A JP 2001063551 A JP2001063551 A JP 2001063551A JP 2002252257 A JP2002252257 A JP 2002252257A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- copper
- thickness
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000969 carriers Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000004065 semiconductors Substances 0.000 title claims description 27
- 239000010410 layers Substances 0.000 claims abstract description 76
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 claims abstract description 59
- 239000010949 copper Substances 0.000 claims abstract description 59
- 229910000623 nickel–chromium alloys Inorganic materials 0.000 claims abstract description 20
- 238000007747 plating Methods 0.000 claims description 51
- 229920001721 Polyimides Polymers 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound 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[Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
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- 230000002542 deteriorative Effects 0.000 abstract 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical compound 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[Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N [Cr].[Ni] Chemical compound 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- ORTQZVOHEJQUHG-UHFFFAOYSA-L Copper(II) chloride Chemical compound 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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体キャリア用
フィルム及びその製造方法に関し、詳しくはベースフィ
ルムであるポリイミド系フィルムと銅層との間に、一定
厚のニッケル−クロム合金のスパッタ層（シード層）を
設けることによって、耐マイグレーション性を向上させ
た半導体キャリア用フィルム及びその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film for a semiconductor carrier and a method for manufacturing the same. The present invention relates to a film for a semiconductor carrier having improved migration resistance by providing a layer, and a method for producing the same.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】ＬＳＩ
等からなる半導体チップ（電子部品）の実装技術には、
チップオンフィルム（ＣＯＦ；Ｃｈｉｐ ｏｎ Ｆｉｌ
ｍ）等がある。2. Description of the Related Art LSI
The technology for mounting semiconductor chips (electronic components) consisting of
Chip on Film (COF; Chip on Fil)
m).
【０００３】ここに用いられるチップオンフィルム基板
は、ベースフィルムであるポリイミド系フィルム上にシ
ード層を形成後、銅メッキして得られる２層基材を用い
る。The chip-on-film substrate used here uses a two-layer substrate obtained by forming a seed layer on a polyimide-based film as a base film and then performing copper plating.
【０００４】従来、銅メッキ法では、成形されたポリイ
ミドフィルム上の密着強化層（シード層）として金属の
スパッタ層を形成し、銅メッキ後、電解銅を厚付けメッ
キして銅を析出させ厚さ８μｍ程度の銅メッキ層を形成
し、２層基材を作成していた。このスパッタ層は、金属
としてニッケル単体が使用されており、その厚さは３０
〜７０Åであった。Conventionally, in the copper plating method, a metal sputtered layer is formed as an adhesion reinforcing layer (seed layer) on a formed polyimide film, and after copper plating, electrolytic copper is deposited and plated to deposit copper. A copper plating layer having a thickness of about 8 μm was formed to form a two-layer base material. This sputtered layer uses nickel alone as a metal and has a thickness of 30%.
It was ~ 70 °.
【０００５】この２層基材は、通常の方法によって、銅
メッキ層側にフォトレジストを塗布し乾燥後、露光、現
像、エッチング、フォトレジスト剥離の工程により、配
線回路パターンを形成し、さらに必要に応じてソルダー
レジスト塗布、硬化及び無電解スズメッキを行い、回路
基板を製造していた。[0005] This two-layer substrate is coated with a photoresist on the copper plating layer side by a usual method, dried and then subjected to exposure, development, etching and photoresist stripping processes to form a wiring circuit pattern. The circuit board was manufactured by applying a solder resist, curing and electroless tin plating according to the requirements.
【０００６】しかし、このような回路基板の電気特性を
評価すると、短時間で配線回路パターン間に銅のマイグ
レーションが生じるという問題があった。液晶ドライバ
ー用ＴＣＰ（テープキャリアパッケージ）では、従来か
ら信頼性確認条件として、８５℃、８５％ＲＨ、ＤＣ６
０Ｖ、１０００時間の電圧印加試験を行い、マイグレー
ションに関する材料評価をしているが、上記のようにし
て得られた回路基板は、この試験に合格するものではな
かった。また、スパッタ層の厚さを６００Åと厚くして
も、得られた回路基板は、上記と同様に銅のマイグレー
ションが生じた。However, when the electrical characteristics of such a circuit board are evaluated, there is a problem that copper migration occurs between wiring circuit patterns in a short time. In the case of TCP (tape carrier package) for liquid crystal driver, reliability check conditions have been 85 ° C, 85% RH, DC6
A voltage application test at 0 V for 1000 hours was performed to evaluate the material for migration, but the circuit board obtained as described above did not pass this test. Even when the thickness of the sputtered layer was increased to 600 °, copper migration occurred in the obtained circuit board in the same manner as described above.
【０００７】従って、本発明の目的は、配線回路パター
ンのエッチング性やメッキ耐性を低下させることなく、
耐マイグレーション特性を著しく向上させた半導体キャ
リア用フィルム及びその製造方法を提供することにあ
る。Accordingly, an object of the present invention is to provide a wiring circuit pattern without lowering the etching property and plating resistance.
An object of the present invention is to provide a semiconductor carrier film having significantly improved migration resistance and a method for producing the same.
【０００８】[0008]
【課題を解決するための手段】本発明者らは、検討の結
果、金属のスパッタ層として一定の厚さを有するニッケ
ル−クロム合金のスパッタ層を用いることによって、上
記目的が達成し得ることを知見した。As a result of investigations, the present inventors have found that the above object can be achieved by using a nickel-chromium alloy sputtered layer having a constant thickness as a metal sputtered layer. I learned.
【０００９】本発明は、上記知見に基づきなされたもの
で、ポリイミド系フィルムの表面に、厚さ７０〜５００
Åのニッケル−クロム合金のスパッタ層及び銅のメッキ
層が設けられ、さらにその上に銅層が設けられているこ
とを特徴とする半導体キャリア用フィルムを提供するも
のである。The present invention has been made on the basis of the above findings, and has a thickness of 70 to 500 on the surface of a polyimide film.
The present invention provides a film for a semiconductor carrier, wherein a sputtering layer of a nickel-chromium alloy and a plating layer of copper are provided, and a copper layer is further provided thereon.
【００１０】また、本発明は、ポリイミド系フィルムの
表面をプラズマ処理した後、ニッケル−クロム合金をス
パッタリングにより厚さ７０〜５００Åとなるように付
着させ、次いで銅をメッキ法により付着させ、その後、
電解銅厚付けメッキを行うことを特徴とする半導体キャ
リア用フィルムの製造方法を提供するものである。In the present invention, after the surface of the polyimide-based film is plasma-treated, a nickel-chromium alloy is deposited by sputtering so as to have a thickness of 70 to 500 °, and then copper is deposited by a plating method.
An object of the present invention is to provide a method for producing a film for a semiconductor carrier, which comprises performing electrolytic copper thick plating.
【００１１】[0011]
【発明の実施の形態】以下、本発明の半導体キャリア用
フィルム及びその製造方法の実施の形態について詳細に
説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of a film for a semiconductor carrier and a method for producing the same according to the present invention will be described in detail.
【００１２】本発明の半導体キャリア用フィルムの概略
断面図を図１に示す。図１に示されるように、本発明の
半導体キャリア用フィルムは、ポリイミド系フィルム１
と銅層２の間に、ニッケル−クロム合金のスパッタ層３
と銅のスパッタ層４とが設けられている。FIG. 1 is a schematic sectional view of a film for a semiconductor carrier of the present invention. As shown in FIG. 1, the film for a semiconductor carrier of the present invention is a polyimide film 1
Between the copper layer 2 and the nickel-chromium alloy sputtered layer 3
And a copper sputter layer 4.
【００１３】ポリイミド系フィルム１は、ベースフィル
ムとして用いられるもので、厚さは３８〜５０μｍのも
のが一般的に用いられ、具体的にはＫａＥＮ（商品名：
東レ・デュポン社製）、ユーピレクス（商品名：宇部興
産社製）、アピカル（商品名：カネカ社製）等が用いら
れる。このポリイミド系フィルムは、表面がプラズマ処
理されている。The polyimide-based film 1 is used as a base film and generally has a thickness of 38 to 50 μm. Specifically, KaEN (trade name:
Toray Dupont Co., Ltd., Upirex (trade name: Ube Industries), Apical (trade name: Kaneka), and the like are used. The surface of this polyimide-based film is plasma-treated.
【００１４】ポリイミド系フィルム１の表面に設けられ
たニッケル−クロム合金のスパッタ層３は、その厚さが
７０〜５００Å、好ましくは１００〜５００Å、さらに
好ましくは１５０〜４００Åである。ニッケル−クロム
合金のスパッタ層３の厚さが７０Å未満では、耐マイグ
レーション性が充分でなく、５００Åを超えると回路基
板に施される無電解スズメッキの異常析出が著しくな
る。The nickel-chromium alloy sputtered layer 3 provided on the surface of the polyimide film 1 has a thickness of 70 to 500 °, preferably 100 to 500 °, more preferably 150 to 400 °. If the thickness of the nickel-chromium alloy sputtered layer 3 is less than 70 °, the migration resistance is not sufficient, and if it exceeds 500 °, abnormal deposition of electroless tin plating applied to the circuit board becomes remarkable.
【００１５】また、ニッケル−クロム合金中のクロム含
有量は、３〜１０重量％であることが望ましい。クロム
含有量が３重量％未満では耐マイグレーション性の向上
効果がなく、１０重量％を超えても耐マイグレーション
性の向上効果はほぼ同一で、かえってパターン形成時の
銅の足残りが多くなる問題がある。It is desirable that the chromium content in the nickel-chromium alloy is 3 to 10% by weight. If the chromium content is less than 3% by weight, the effect of improving the migration resistance is not obtained, and if it exceeds 10% by weight, the effect of improving the migration resistance is almost the same. is there.
【００１６】ニッケル−クロム合金のスパッタ層３の上
に設けられる銅のメッキ層４は、その厚さが０．５〜
１．５μｍであることが好ましい。The copper plating layer 4 provided on the nickel-chromium alloy sputtering layer 3 has a thickness of 0.5 to
It is preferably 1.5 μm.
【００１７】銅層２は厚付け銅メッキ層であり、その厚
さは５〜１５μｍであることが好ましい。The copper layer 2 is a thick copper plating layer, and its thickness is preferably 5 to 15 μm.
【００１８】次に、本発明の半導体キャリア用フィルム
の製造方法を説明する。先ず、ポリイミド系フィルムの
表面をプラズマ処理によって表面処理を行う。そして、
この表面処理した面に、ニッケル−クロム合金をスパッ
タリングにより付着させ、厚さ７０〜５００Åのニッケ
ル−クロム合金のスパッタ層を形成する。スパッタリン
グ条件は任意である。Next, a method for producing the semiconductor carrier film of the present invention will be described. First, a surface treatment is performed on the surface of the polyimide-based film by plasma treatment. And
A nickel-chromium alloy is deposited on this surface-treated surface by sputtering to form a sputtered layer of a nickel-chromium alloy having a thickness of 70 to 500 °. Sputtering conditions are arbitrary.
【００１９】次に、銅をメッキ法により付着させ、銅の
メッキ層を形成する。銅のメッキ層の厚みは０．５〜
１．５μｍが好ましい。銅メッキ条件は任意である。Next, copper is deposited by plating to form a copper plating layer. Copper plating layer thickness is 0.5 ~
1.5 μm is preferred. Copper plating conditions are arbitrary.
【００２０】最後に、電解銅厚付けメッキを行い、銅メ
ッキ層を形成する。厚付け銅メッキ層の厚さは５〜１５
μｍが好ましい。このようにして本発明の半導体キャリ
ア用フィルム（２層基材）が得られる。Finally, electrolytic copper thick plating is performed to form a copper plating layer. The thickness of the thick copper plating layer is 5 to 15
μm is preferred. Thus, the semiconductor carrier film (two-layer substrate) of the present invention is obtained.
【００２１】このようにして得られた本発明の半導体キ
ャリア用フィルムは、通常の方法によって、銅層側にフ
ォトレジストを塗布し乾燥後、露光、現像、エッチン
グ、フォトレジスト剥離の工程により、配線回路パター
ンを形成し、さらに必要に応じてソルダーレジスト塗
布、硬化及び無電解スズメッキを行い、回路基板が得ら
れる。The thus-obtained film for a semiconductor carrier of the present invention is coated with a photoresist on the copper layer side by a usual method, dried, and then exposed, developed, etched, and stripped of a photoresist to form a wiring. A circuit pattern is formed, and if necessary, a solder resist is applied, cured, and electroless tin-plated to obtain a circuit board.
【００２２】なお、ニッケル−クロム合金のスパッタ層
は、スパッタ法以外で形成してもよく、例えば、ニッケ
ルメッキとクロムメッキを併用後、両者を拡散させて用
いてもよい。The nickel-chromium alloy sputtered layer may be formed by a method other than the sputtering method. For example, both nickel plating and chromium plating may be used, and then both may be diffused.
【００２３】[0023]
【実施例】以下、実施例等に基づいて本発明を具体的に
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on embodiments and the like.
【００２４】〔比較例１〜４〕厚さ３８μｍのポリイミ
ド系フィルム（商品名：ＫａＥＮ、東レ・デュポン社
製）の表面をプラズマ処理した後、表面処理面にニッケ
ル単体をスパッタリングにより付着させ、厚さ３０Å
（比較例１）、７０Å（比較例２）、３００Å（比較例
３）、６００Å（比較例４）のニッケルのスパッタ層を
それぞれ形成した。次いで、その上に銅をメッキ法によ
り付着させ、厚さ１μｍの銅のメッキ層を形成した。さ
らに、その上に電解銅厚付けメッキによって、厚さ８μ
ｍの厚付け銅メッキ層を形成し、半導体キャリア用フィ
ルム（２層基材）とした。[Comparative Examples 1 to 4] After the surface of a 38 μm-thick polyimide-based film (trade name: KaEN, manufactured by Dupont Toray) was plasma-treated, nickel alone was adhered to the surface-treated surface by sputtering. 30Å
(Comparative Example 1), 70 ° (Comparative Example 2), 300 ° (Comparative Example 3), and 600 ° (Comparative Example 4) nickel sputtered layers were formed, respectively. Next, copper was deposited thereon by a plating method to form a copper plating layer having a thickness of 1 μm. Further, a thickness of 8 μm is formed thereon by electrolytic copper thick plating.
A copper plating layer having a thickness of m was formed to obtain a film for a semiconductor carrier (two-layer substrate).
【００２５】これらの半導体キャリア用フィルム（２層
基材）を使用し、通常の方法によって、銅メッキ層側に
フォトレジストを塗布し乾燥後、露光、現像、エッチン
グ、フォトレジスト剥離の工程により、櫛形電極パター
ンを形成し、無電解スズメッキを行い回路基板とした。Using these semiconductor carrier films (two-layer base material), a photoresist is applied to the copper plating layer side by a usual method, dried and then exposed, developed, etched, and photoresist stripped. A comb-shaped electrode pattern was formed, and electroless tin plating was performed to obtain a circuit board.
【００２６】エッチングは、２層基材を３５ｍｍ幅にス
リットした長尺テープを使用し、フォトレジスト（商品
名：ＦＲ−２００、シプレー社製）を塗布後、乾燥し、
その後、５０μｍピッチの櫛形電極パターンを形成した
ガラスフォトマスクで露光し、さらにアルカリ（ＫＯ
Ｈ）で現像した。次に、ＨＣｌとＨ2 Ｏ2 を含む塩化第
二銅のエッチングラインで、４０℃、２ｋｇ／ｃｍ2 の
スプレー圧でエッチングし、図２に示されるような５０
μｍピッチの櫛形電極パターンを形成後、０．５μｍ厚
に無電解スズメッキを行った。その後、１２５℃、１時
間のアニール処理を行った。The etching is performed by using a long tape in which a two-layer base material is slit to a width of 35 mm, applying a photoresist (trade name: FR-200, manufactured by Shipley Co., Ltd.), and then drying.
Thereafter, exposure is performed using a glass photomask on which a comb-shaped electrode pattern having a pitch of 50 μm is formed.
H). Next, etching was performed at an etching line of cupric chloride containing HCl and H 2 O 2 at 40 ° C. with a spray pressure of 2 kg / cm 2 , and the etching was performed as shown in FIG.
After forming a comb-shaped electrode pattern with a pitch of μm, electroless tin plating was performed to a thickness of 0.5 μm. Thereafter, annealing treatment was performed at 125 ° C. for one hour.
【００２７】図２に示されるように、櫛形電極は、負極
５ａ及び陽極５ｂの一対で、ポリイミド系フィルム１上
に形成される。また、無電解スズメッキは、電解液とし
てＬＴ−３４（商品名、シプレー社製）を用い、７０
℃、約３分の条件で行った。As shown in FIG. 2, the comb-shaped electrode is formed on the polyimide film 1 as a pair of a negative electrode 5a and an anode 5b. In the electroless tin plating, LT-34 (trade name, manufactured by Shipley Co., Ltd.) was used as an electrolytic solution, and
C. for about 3 minutes.
【００２８】〔実施例例１〜３及び比較例５〕厚さ３８
μｍのポリイミド系フィルム（商品名：ＫａＥＮ、東レ
・デュポン社製）の表面をプラズマ処理した後、表面処
理面にニッケル−クロム（５重量％）合金をスパッタリ
ングにより付着させ、厚さ３０Å（比較例５）、７０Å
（実施例１）、１５０Å（実施例２）、３００Å（実施
例３）のニッケル−クロム合金のスパッタ層をそれぞれ
形成した。次いで、その上に銅をメッキ法により付着さ
せ、厚さ１μｍの銅のメッキ層を形成した。さらに、そ
の上に電解銅厚付けメッキによって、厚さ８μｍの厚付
け銅メッキ層を形成し、半導体キャリア用フィルム（２
層基材）とした。[Examples 1-3 and Comparative Example 5] Thickness 38
After the surface of a μm polyimide-based film (trade name: KaEN, manufactured by Toray DuPont) is plasma-treated, a nickel-chromium (5% by weight) alloy is adhered to the surface-treated surface by sputtering to a thickness of 30 mm (comparative example). 5), 70Å
(Example 1) Sputtered layers of a nickel-chromium alloy of 150 ° (Example 2) and 300 ° (Example 3) were formed, respectively. Next, copper was deposited thereon by a plating method to form a copper plating layer having a thickness of 1 μm. Further, a thick copper plating layer having a thickness of 8 μm is formed thereon by electrolytic copper thick plating, and a film for a semiconductor carrier (2) is formed.
Layer substrate).
【００２９】これらの半導体キャリア用フィルム（２層
基材）を使用し、比較例１と同様にして、図２に示され
るようなポリイミド系フィルム１の上に、櫛形電極５
ａ、５ｂを形成した。Using these semiconductor carrier films (two-layer substrate), in the same manner as in Comparative Example 1, a comb-shaped electrode 5 was placed on a polyimide film 1 as shown in FIG.
a and 5b were formed.
【００３０】実施例１〜３及び比較例１〜５で得られた
櫛形電極に、電圧（ＤＣ６０Ｖ）を付加し、恒温恒湿槽
（ＦＸ４１２Ｐタイプ、エタック社製）の中に入れて、
８５℃、８５％ＲＨの条件で、マイグレーション評価を
行った。評価は、電圧負荷状態のまま５分毎に絶縁抵抗
値を算出してマイグレーション評価とした。結果を表１
に示す。また、比較例１において、２００時間経過後の
マイグレーションの発生状態を示す模式平面図を図３に
示す。A voltage (60 V DC) was applied to the comb-shaped electrodes obtained in Examples 1 to 3 and Comparative Examples 1 to 5, and the comb-shaped electrodes were placed in a thermo-hygrostat (FX412P type, manufactured by Ettack).
The migration was evaluated under the conditions of 85 ° C. and 85% RH. The evaluation was performed by calculating the insulation resistance value every 5 minutes while maintaining the voltage load state, and used as the migration evaluation. Table 1 shows the results
Shown in FIG. 3 is a schematic plan view showing the state of occurrence of migration after 200 hours in Comparative Example 1.
【００３１】[0031]
【表１】 [Table 1]
【００３２】表１に示されるように、１５０、３００Å
のニッケル−クロム合金のスパッタ層を有する実施例２
〜３は、比較例１〜５に比較して、マイグレーション発
生の時間が長くなっていることが分かる。また、７０Å
のニッケル−クロム合金のスパッタ層を有する実施例１
は、７０Åのニッケルのスパッタ層を有する比較例２に
比較して、マイグレーション発生の時間が長い。As shown in Table 1, 150, 300 °
Example 2 having a nickel-chromium alloy sputtered layer
3 shows that the time of occurrence of migration was longer than that of Comparative Examples 1 to 5. Also, 70Å
Example 1 having a nickel-chromium alloy sputtered layer
Has a longer migration generation time than Comparative Example 2 having a 70 ° nickel sputtered layer.
【００３３】また、図３に示されるように、比較例１で
は、櫛形電極５ａ、５ｂ間にマイグレーション６の発生
が顕著であった。As shown in FIG. 3, in Comparative Example 1, the occurrence of migration 6 between the comb electrodes 5a and 5b was remarkable.
【００３４】[0034]
【発明の効果】本発明の半導体キャリア用フィルムによ
って、配線回路パターンのエッチング性やメッキ耐性を
低下させることなく、耐マイグレーション特性を著しく
向上させることができる。また、本発明の製造方法によ
って、上記半導体キャリア用フィルムが経済性をもっ
て、工業的規模で製造できる。According to the film for a semiconductor carrier of the present invention, migration resistance can be remarkably improved without lowering the etching property and plating resistance of a wiring circuit pattern. Further, by the production method of the present invention, the film for a semiconductor carrier can be economically produced on an industrial scale.
【図１】図１は、本発明の半導体キャリア用フィルムの
概略断面図である。FIG. 1 is a schematic sectional view of a semiconductor carrier film of the present invention.
【図２】図２は、ポリイミド系フィルム上に形成された
櫛形電極の平面図である。FIG. 2 is a plan view of a comb-shaped electrode formed on a polyimide-based film.
【図３】図３は、比較例１において、２００時間経過後
のマイグレーションの発生状態を示す模式平面図であ
る。FIG. 3 is a schematic plan view showing a state of occurrence of migration after 200 hours in Comparative Example 1.
１：ポリイミド系フィルム ２：銅層 ３：ニッケル−クロム合金のスパッタ層 ４：銅のメッキ層 ５ａ、５ｂ：櫛形電極 ６：マイグレーション 1: Polyimide film 2: Copper layer 3: Sputtered layer of nickel-chromium alloy 4: Copper plating layer 5a, 5b: Comb-shaped electrode 6: Migration
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１３年３月１５日（２００１．３．１
５）[Submission date] March 15, 2001 (2001.3.1.1)
5)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００４[Correction target item name] 0004
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００４】従来、銅メッキ法では、成形されたポリイ
ミドフィルム上の密着強化層（シード層）として金属の
スパッタ層を形成し、銅メッキ後、電解銅を厚付けメッ
キして銅を析出させ厚さ７μｍ程度の銅厚メッキ層を形
成し、２層基材を作成していた。このスパッタ層は、金
属としてニッケル単体が使用されており、その厚さは３
０〜７０Åであった。Conventionally, in the copper plating method, a metal sputtered layer is formed as an adhesion reinforcing layer (seed layer) on a formed polyimide film, and after copper plating, electrolytic copper is deposited and plated to deposit copper. It is 7 to form a μm order of copper thickness plated layer had created a 2-layer substrate. This sputtered layer uses nickel alone as a metal and has a thickness of 3
0-70 °.
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２４[Correction target item name] 0024
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２４】〔比較例１〜４〕厚さ３８μｍのポリイミ
ド系フィルム（商品名：ＫａＥＮ、東レ・デュポン社
製）の表面をプラズマ処理した後、表面処理面にニッケ
ル単体をスパッタリングにより付着させ、厚さ３０Å
（比較例１）、７０Å（比較例２）、３００Å（比較例
３）、６００Å（比較例４）のニッケルのスパッタ層を
それぞれ形成した。次いで、その上に銅をメッキ法によ
り付着させ、厚さ１μｍの銅のメッキ層を形成した。さ
らに、その上に電解銅厚付けメッキによって、厚さ７μ
ｍの厚付け銅メッキ層を形成し、半導体キャリア用フィ
ルム（２層基材）とした。[Comparative Examples 1 to 4] After the surface of a 38 μm-thick polyimide-based film (trade name: KaEN, manufactured by Dupont Toray) was plasma-treated, nickel alone was adhered to the surface-treated surface by sputtering. 30Å
(Comparative Example 1), 70 ° (Comparative Example 2), 300 ° (Comparative Example 3), and 600 ° (Comparative Example 4) nickel sputtered layers were formed, respectively. Next, copper was deposited thereon by a plating method to form a copper plating layer having a thickness of 1 μm. Furthermore, a 7 μm thick electrolytic copper thick plating
A copper plating layer having a thickness of m was formed to obtain a film for a semiconductor carrier (two-layer substrate).
【手続補正３】[Procedure amendment 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２８[Correction target item name] 0028
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２８】〔実施例例１〜３及び比較例５〕厚さ３８
μｍのポリイミド系フィルム（商品名：ＫａＥＮ、東レ
・デュポン社製）の表面をプラズマ処理した後、表面処
理面にニッケル−クロム（５重量％）合金をスパッタリ
ングにより付着させ、厚さ３０Å（比較例５）、７０Å
（実施例１）、１５０Å（実施例２）、３００Å（実施
例３）のニッケル−クロム合金のスパッタ層をそれぞれ
形成した。次いで、その上に銅をメッキ法により付着さ
せ、厚さ１μｍの銅のメッキ層を形成した。さらに、そ
の上に電解銅厚付けメッキによって、厚さ７μｍの厚付
け銅メッキ層を形成し、半導体キャリア用フィルム（２
層基材）とした。[Examples 1-3 and Comparative Example 5] Thickness 38
After the surface of a μm polyimide-based film (trade name: KaEN, manufactured by Toray DuPont) is plasma-treated, a nickel-chromium (5% by weight) alloy is adhered to the surface-treated surface by sputtering to a thickness of 30 mm (comparative example). 5), 70Å
(Example 1) Sputtered layers of a nickel-chromium alloy of 150 ° (Example 2) and 300 ° (Example 3) were formed, respectively. Next, copper was deposited thereon by a plating method to form a copper plating layer having a thickness of 1 μm. Further, a thick copper plating layer having a thickness of 7 μm was formed thereon by electrolytic copper thick plating, and a film for a semiconductor carrier (2) was formed.
Layer base material).
───────────────────────────────────────────────────── フロントページの続き (72)発明者 明石 芳一 埼玉県上尾市原市1333−２ 三井金属鉱業 株式会社総合研究所内 (72)発明者 井口 裕 山口県下関市彦島西山町１−１−１ 株式 会社エム・シー・エス内 (72)発明者 粟田 秀俊 山口県下関市彦島西山町１−１−１ 株式 会社エム・シー・エス内 Ｆターム(参考） 4K024 AA09 AB08 BA12 BB11 BC01 GA04 GA16 4K029 AA11 BA25 BC03 BD02 CA05 GA03 4K044 AA16 AB02 AB10 BA02 BA06 BB04 BC02 CA13 CA15 CA18 5F044 KK03 MM22 MM48 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshikazu Akashi 1333-2, Hara-shi, Ageo-shi, Saitama Mitsui Mining & Smelting Co., Ltd. (72) Inventor Hiroshi Iguchi 1-1-1 Hikoshima Nishiyamacho, Shimonoseki-shi, Yamaguchi Prefecture. MC CS Co., Ltd. (72) Inventor Hidetoshi Awata 1-1-1 Hikoshima Nishiyama-cho, Shimonoseki-shi, Yamaguchi FMC Term Co., Ltd. 4K024 AA09 AB08 BA12 BB11 BC01 GA04 GA16 4K029 AA11 BA25 BC03 BD02 CA05 GA03 4K044 AA16 AB02 AB10 BA02 BA06 BB04 BC02 CA13 CA15 CA18 5F044 KK03 MM22 MM48
Claims (5)
- 【請求項１】 ポリイミド系フィルムの表面に、厚さ７
０〜５００Åのニッケル−クロム合金のスパッタ層及び
銅のメッキ層が設けられ、さらにその上に銅層が設けら
れていることを特徴とする半導体キャリア用フィルム。1. A polyimide film having a thickness of 7
A film for a semiconductor carrier comprising a nickel-chromium alloy sputtered layer of 0 to 500 ° and a copper plating layer, and a copper layer further provided thereon. - 【請求項２】 上記ニッケル−クロム合金のスパッタ層
のクロム含有量が３〜１０重量％である請求項１記載の
半導体キャリア用フィルム。2. The film for a semiconductor carrier according to claim 1, wherein the chromium content of the nickel-chromium alloy sputtered layer is 3 to 10% by weight. - 【請求項３】 上記銅層が銅メッキ層である請求項１又
は２記載の半導体キャリア用フィルム。3. The film for a semiconductor carrier according to claim 1, wherein the copper layer is a copper plating layer. - 【請求項４】 上記銅メッキ層の厚さが５〜１５μｍで
ある請求項３記載の半導体キャリア用フィルム。4. The film for a semiconductor carrier according to claim 3, wherein the thickness of the copper plating layer is 5 to 15 μm. - 【請求項５】 ポリイミド系フィルムの表面をプラズマ
処理した後、ニッケル−クロム合金をスパッタリングに
より厚さ７０〜５００Åとなるように付着させ、次いで
銅をメッキ法により付着させ、その後、電解銅厚付けメ
ッキを行うことを特徴とする半導体キャリア用フィルム
の製造方法。5. After plasma-treating the surface of the polyimide-based film, a nickel-chromium alloy is deposited by sputtering so as to have a thickness of 70 to 500 °, then copper is deposited by a plating method, and then electrolytic copper deposition is performed. A method for producing a film for a semiconductor carrier, comprising plating.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000383561 | 2000-12-18 | ||
| JP2000-383561 | 2000-12-18 | ||
| JP2001063551A JP2002252257A (en) | 2000-12-18 | 2001-03-07 | Semiconductor carrier film and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001063551A JP2002252257A (en) | 2000-12-18 | 2001-03-07 | Semiconductor carrier film and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002252257A true JP2002252257A (en) | 2002-09-06 |
Family
ID=26606006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001063551A Pending JP2002252257A (en) | 2000-12-18 | 2001-03-07 | Semiconductor carrier film and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002252257A (en) |
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