JP2002252257A - Semiconductor carrier film and its manufacturing method - Google Patents

Semiconductor carrier film and its manufacturing method

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Publication number
JP2002252257A
JP2002252257A JP2001063551A JP2001063551A JP2002252257A JP 2002252257 A JP2002252257 A JP 2002252257A JP 2001063551 A JP2001063551 A JP 2001063551A JP 2001063551 A JP2001063551 A JP 2001063551A JP 2002252257 A JP2002252257 A JP 2002252257A
Authority
JP
Japan
Prior art keywords
layer
film
copper
thickness
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001063551A
Other languages
Japanese (ja)
Inventor
Yoshiichi Akashi
Hidetoshi Awata
Yutaka Iguchi
Tatsuo Kataoka
裕 井口
芳一 明石
龍男 片岡
秀俊 粟田
Original Assignee
Mitsui Mining & Smelting Co Ltd
Sumitomo Metal Mining Co Ltd
三井金属鉱業株式会社
住友金属鉱山株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000383561 priority Critical
Priority to JP2000-383561 priority
Application filed by Mitsui Mining & Smelting Co Ltd, Sumitomo Metal Mining Co Ltd, 三井金属鉱業株式会社, 住友金属鉱山株式会社 filed Critical Mitsui Mining & Smelting Co Ltd
Priority to JP2001063551A priority patent/JP2002252257A/en
Publication of JP2002252257A publication Critical patent/JP2002252257A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor-carrier film and its manufacturing method by which migration resistance characteristic is significantly improved without deteriorating etching characteristic and solder resistance. SOLUTION: In the semiconductor-carrier film, a nickel-chromium-alloy sputtered layer having a thickness of 70 to 500 Å and a copper plated layer are formed on a surface of polyamide film, and a copper layer is formed on it.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体キャリア用
フィルム及びその製造方法に関し、詳しくはベースフィ
ルムであるポリイミド系フィルムと銅層との間に、一定
厚のニッケル−クロム合金のスパッタ層(シード層)を
設けることによって、耐マイグレーション性を向上させ
た半導体キャリア用フィルム及びその製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film for a semiconductor carrier and a method for manufacturing the same. The present invention relates to a film for a semiconductor carrier having improved migration resistance by providing a layer, and a method for producing the same.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】LSI
等からなる半導体チップ(電子部品)の実装技術には、
チップオンフィルム(COF;Chip on Fil
m)等がある。
2. Description of the Related Art LSI
The technology for mounting semiconductor chips (electronic components) consisting of
Chip on Film (COF; Chip on Fil)
m).

【0003】ここに用いられるチップオンフィルム基板
は、ベースフィルムであるポリイミド系フィルム上にシ
ード層を形成後、銅メッキして得られる2層基材を用い
る。
The chip-on-film substrate used here uses a two-layer substrate obtained by forming a seed layer on a polyimide-based film as a base film and then performing copper plating.

【0004】従来、銅メッキ法では、成形されたポリイ
ミドフィルム上の密着強化層(シード層)として金属の
スパッタ層を形成し、銅メッキ後、電解銅を厚付けメッ
キして銅を析出させ厚さ8μm程度の銅メッキ層を形成
し、2層基材を作成していた。このスパッタ層は、金属
としてニッケル単体が使用されており、その厚さは30
〜70Åであった。
Conventionally, in the copper plating method, a metal sputtered layer is formed as an adhesion reinforcing layer (seed layer) on a formed polyimide film, and after copper plating, electrolytic copper is deposited and plated to deposit copper. A copper plating layer having a thickness of about 8 μm was formed to form a two-layer base material. This sputtered layer uses nickel alone as a metal and has a thickness of 30%.
It was ~ 70 °.

【0005】この2層基材は、通常の方法によって、銅
メッキ層側にフォトレジストを塗布し乾燥後、露光、現
像、エッチング、フォトレジスト剥離の工程により、配
線回路パターンを形成し、さらに必要に応じてソルダー
レジスト塗布、硬化及び無電解スズメッキを行い、回路
基板を製造していた。
[0005] This two-layer substrate is coated with a photoresist on the copper plating layer side by a usual method, dried and then subjected to exposure, development, etching and photoresist stripping processes to form a wiring circuit pattern. The circuit board was manufactured by applying a solder resist, curing and electroless tin plating according to the requirements.

【0006】しかし、このような回路基板の電気特性を
評価すると、短時間で配線回路パターン間に銅のマイグ
レーションが生じるという問題があった。液晶ドライバ
ー用TCP(テープキャリアパッケージ)では、従来か
ら信頼性確認条件として、85℃、85%RH、DC6
0V、1000時間の電圧印加試験を行い、マイグレー
ションに関する材料評価をしているが、上記のようにし
て得られた回路基板は、この試験に合格するものではな
かった。また、スパッタ層の厚さを600Åと厚くして
も、得られた回路基板は、上記と同様に銅のマイグレー
ションが生じた。
However, when the electrical characteristics of such a circuit board are evaluated, there is a problem that copper migration occurs between wiring circuit patterns in a short time. In the case of TCP (tape carrier package) for liquid crystal driver, reliability check conditions have been 85 ° C, 85% RH, DC6
A voltage application test at 0 V for 1000 hours was performed to evaluate the material for migration, but the circuit board obtained as described above did not pass this test. Even when the thickness of the sputtered layer was increased to 600 °, copper migration occurred in the obtained circuit board in the same manner as described above.

【0007】従って、本発明の目的は、配線回路パター
ンのエッチング性やメッキ耐性を低下させることなく、
耐マイグレーション特性を著しく向上させた半導体キャ
リア用フィルム及びその製造方法を提供することにあ
る。
Accordingly, an object of the present invention is to provide a wiring circuit pattern without lowering the etching property and plating resistance.
An object of the present invention is to provide a semiconductor carrier film having significantly improved migration resistance and a method for producing the same.

【0008】[0008]

【課題を解決するための手段】本発明者らは、検討の結
果、金属のスパッタ層として一定の厚さを有するニッケ
ル−クロム合金のスパッタ層を用いることによって、上
記目的が達成し得ることを知見した。
As a result of investigations, the present inventors have found that the above object can be achieved by using a nickel-chromium alloy sputtered layer having a constant thickness as a metal sputtered layer. I learned.

【0009】本発明は、上記知見に基づきなされたもの
で、ポリイミド系フィルムの表面に、厚さ70〜500
Åのニッケル−クロム合金のスパッタ層及び銅のメッキ
層が設けられ、さらにその上に銅層が設けられているこ
とを特徴とする半導体キャリア用フィルムを提供するも
のである。
The present invention has been made on the basis of the above findings, and has a thickness of 70 to 500 on the surface of a polyimide film.
The present invention provides a film for a semiconductor carrier, wherein a sputtering layer of a nickel-chromium alloy and a plating layer of copper are provided, and a copper layer is further provided thereon.

【0010】また、本発明は、ポリイミド系フィルムの
表面をプラズマ処理した後、ニッケル−クロム合金をス
パッタリングにより厚さ70〜500Åとなるように付
着させ、次いで銅をメッキ法により付着させ、その後、
電解銅厚付けメッキを行うことを特徴とする半導体キャ
リア用フィルムの製造方法を提供するものである。
In the present invention, after the surface of the polyimide-based film is plasma-treated, a nickel-chromium alloy is deposited by sputtering so as to have a thickness of 70 to 500 °, and then copper is deposited by a plating method.
An object of the present invention is to provide a method for producing a film for a semiconductor carrier, which comprises performing electrolytic copper thick plating.

【0011】[0011]

【発明の実施の形態】以下、本発明の半導体キャリア用
フィルム及びその製造方法の実施の形態について詳細に
説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of a film for a semiconductor carrier and a method for producing the same according to the present invention will be described in detail.

【0012】本発明の半導体キャリア用フィルムの概略
断面図を図1に示す。図1に示されるように、本発明の
半導体キャリア用フィルムは、ポリイミド系フィルム1
と銅層2の間に、ニッケル−クロム合金のスパッタ層3
と銅のスパッタ層4とが設けられている。
FIG. 1 is a schematic sectional view of a film for a semiconductor carrier of the present invention. As shown in FIG. 1, the film for a semiconductor carrier of the present invention is a polyimide film 1
Between the copper layer 2 and the nickel-chromium alloy sputtered layer 3
And a copper sputter layer 4.

【0013】ポリイミド系フィルム1は、ベースフィル
ムとして用いられるもので、厚さは38〜50μmのも
のが一般的に用いられ、具体的にはKaEN(商品名:
東レ・デュポン社製)、ユーピレクス(商品名:宇部興
産社製)、アピカル(商品名:カネカ社製)等が用いら
れる。このポリイミド系フィルムは、表面がプラズマ処
理されている。
The polyimide-based film 1 is used as a base film and generally has a thickness of 38 to 50 μm. Specifically, KaEN (trade name:
Toray Dupont Co., Ltd., Upirex (trade name: Ube Industries), Apical (trade name: Kaneka), and the like are used. The surface of this polyimide-based film is plasma-treated.

【0014】ポリイミド系フィルム1の表面に設けられ
たニッケル−クロム合金のスパッタ層3は、その厚さが
70〜500Å、好ましくは100〜500Å、さらに
好ましくは150〜400Åである。ニッケル−クロム
合金のスパッタ層3の厚さが70Å未満では、耐マイグ
レーション性が充分でなく、500Åを超えると回路基
板に施される無電解スズメッキの異常析出が著しくな
る。
The nickel-chromium alloy sputtered layer 3 provided on the surface of the polyimide film 1 has a thickness of 70 to 500 °, preferably 100 to 500 °, more preferably 150 to 400 °. If the thickness of the nickel-chromium alloy sputtered layer 3 is less than 70 °, the migration resistance is not sufficient, and if it exceeds 500 °, abnormal deposition of electroless tin plating applied to the circuit board becomes remarkable.

【0015】また、ニッケル−クロム合金中のクロム含
有量は、3〜10重量%であることが望ましい。クロム
含有量が3重量%未満では耐マイグレーション性の向上
効果がなく、10重量%を超えても耐マイグレーション
性の向上効果はほぼ同一で、かえってパターン形成時の
銅の足残りが多くなる問題がある。
It is desirable that the chromium content in the nickel-chromium alloy is 3 to 10% by weight. If the chromium content is less than 3% by weight, the effect of improving the migration resistance is not obtained, and if it exceeds 10% by weight, the effect of improving the migration resistance is almost the same. is there.

【0016】ニッケル−クロム合金のスパッタ層3の上
に設けられる銅のメッキ層4は、その厚さが0.5〜
1.5μmであることが好ましい。
The copper plating layer 4 provided on the nickel-chromium alloy sputtering layer 3 has a thickness of 0.5 to
It is preferably 1.5 μm.

【0017】銅層2は厚付け銅メッキ層であり、その厚
さは5〜15μmであることが好ましい。
The copper layer 2 is a thick copper plating layer, and its thickness is preferably 5 to 15 μm.

【0018】次に、本発明の半導体キャリア用フィルム
の製造方法を説明する。先ず、ポリイミド系フィルムの
表面をプラズマ処理によって表面処理を行う。そして、
この表面処理した面に、ニッケル−クロム合金をスパッ
タリングにより付着させ、厚さ70〜500Åのニッケ
ル−クロム合金のスパッタ層を形成する。スパッタリン
グ条件は任意である。
Next, a method for producing the semiconductor carrier film of the present invention will be described. First, a surface treatment is performed on the surface of the polyimide-based film by plasma treatment. And
A nickel-chromium alloy is deposited on this surface-treated surface by sputtering to form a sputtered layer of a nickel-chromium alloy having a thickness of 70 to 500 °. Sputtering conditions are arbitrary.

【0019】次に、銅をメッキ法により付着させ、銅の
メッキ層を形成する。銅のメッキ層の厚みは0.5〜
1.5μmが好ましい。銅メッキ条件は任意である。
Next, copper is deposited by plating to form a copper plating layer. Copper plating layer thickness is 0.5 ~
1.5 μm is preferred. Copper plating conditions are arbitrary.

【0020】最後に、電解銅厚付けメッキを行い、銅メ
ッキ層を形成する。厚付け銅メッキ層の厚さは5〜15
μmが好ましい。このようにして本発明の半導体キャリ
ア用フィルム(2層基材)が得られる。
Finally, electrolytic copper thick plating is performed to form a copper plating layer. The thickness of the thick copper plating layer is 5 to 15
μm is preferred. Thus, the semiconductor carrier film (two-layer substrate) of the present invention is obtained.

【0021】このようにして得られた本発明の半導体キ
ャリア用フィルムは、通常の方法によって、銅層側にフ
ォトレジストを塗布し乾燥後、露光、現像、エッチン
グ、フォトレジスト剥離の工程により、配線回路パター
ンを形成し、さらに必要に応じてソルダーレジスト塗
布、硬化及び無電解スズメッキを行い、回路基板が得ら
れる。
The thus-obtained film for a semiconductor carrier of the present invention is coated with a photoresist on the copper layer side by a usual method, dried, and then exposed, developed, etched, and stripped of a photoresist to form a wiring. A circuit pattern is formed, and if necessary, a solder resist is applied, cured, and electroless tin-plated to obtain a circuit board.

【0022】なお、ニッケル−クロム合金のスパッタ層
は、スパッタ法以外で形成してもよく、例えば、ニッケ
ルメッキとクロムメッキを併用後、両者を拡散させて用
いてもよい。
The nickel-chromium alloy sputtered layer may be formed by a method other than the sputtering method. For example, both nickel plating and chromium plating may be used, and then both may be diffused.

【0023】[0023]

【実施例】以下、実施例等に基づいて本発明を具体的に
説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on embodiments and the like.

【0024】〔比較例1〜4〕厚さ38μmのポリイミ
ド系フィルム(商品名:KaEN、東レ・デュポン社
製)の表面をプラズマ処理した後、表面処理面にニッケ
ル単体をスパッタリングにより付着させ、厚さ30Å
(比較例1)、70Å(比較例2)、300Å(比較例
3)、600Å(比較例4)のニッケルのスパッタ層を
それぞれ形成した。次いで、その上に銅をメッキ法によ
り付着させ、厚さ1μmの銅のメッキ層を形成した。さ
らに、その上に電解銅厚付けメッキによって、厚さ8μ
mの厚付け銅メッキ層を形成し、半導体キャリア用フィ
ルム(2層基材)とした。
[Comparative Examples 1 to 4] After the surface of a 38 μm-thick polyimide-based film (trade name: KaEN, manufactured by Dupont Toray) was plasma-treated, nickel alone was adhered to the surface-treated surface by sputtering. 30Å
(Comparative Example 1), 70 ° (Comparative Example 2), 300 ° (Comparative Example 3), and 600 ° (Comparative Example 4) nickel sputtered layers were formed, respectively. Next, copper was deposited thereon by a plating method to form a copper plating layer having a thickness of 1 μm. Further, a thickness of 8 μm is formed thereon by electrolytic copper thick plating.
A copper plating layer having a thickness of m was formed to obtain a film for a semiconductor carrier (two-layer substrate).

【0025】これらの半導体キャリア用フィルム(2層
基材)を使用し、通常の方法によって、銅メッキ層側に
フォトレジストを塗布し乾燥後、露光、現像、エッチン
グ、フォトレジスト剥離の工程により、櫛形電極パター
ンを形成し、無電解スズメッキを行い回路基板とした。
Using these semiconductor carrier films (two-layer base material), a photoresist is applied to the copper plating layer side by a usual method, dried and then exposed, developed, etched, and photoresist stripped. A comb-shaped electrode pattern was formed, and electroless tin plating was performed to obtain a circuit board.

【0026】エッチングは、2層基材を35mm幅にス
リットした長尺テープを使用し、フォトレジスト(商品
名:FR−200、シプレー社製)を塗布後、乾燥し、
その後、50μmピッチの櫛形電極パターンを形成した
ガラスフォトマスクで露光し、さらにアルカリ(KO
H)で現像した。次に、HClとH2 2 を含む塩化第
二銅のエッチングラインで、40℃、2kg/cm2
スプレー圧でエッチングし、図2に示されるような50
μmピッチの櫛形電極パターンを形成後、0.5μm厚
に無電解スズメッキを行った。その後、125℃、1時
間のアニール処理を行った。
The etching is performed by using a long tape in which a two-layer base material is slit to a width of 35 mm, applying a photoresist (trade name: FR-200, manufactured by Shipley Co., Ltd.), and then drying.
Thereafter, exposure is performed using a glass photomask on which a comb-shaped electrode pattern having a pitch of 50 μm is formed.
H). Next, etching was performed at an etching line of cupric chloride containing HCl and H 2 O 2 at 40 ° C. with a spray pressure of 2 kg / cm 2 , and the etching was performed as shown in FIG.
After forming a comb-shaped electrode pattern with a pitch of μm, electroless tin plating was performed to a thickness of 0.5 μm. Thereafter, annealing treatment was performed at 125 ° C. for one hour.

【0027】図2に示されるように、櫛形電極は、負極
5a及び陽極5bの一対で、ポリイミド系フィルム1上
に形成される。また、無電解スズメッキは、電解液とし
てLT−34(商品名、シプレー社製)を用い、70
℃、約3分の条件で行った。
As shown in FIG. 2, the comb-shaped electrode is formed on the polyimide film 1 as a pair of a negative electrode 5a and an anode 5b. In the electroless tin plating, LT-34 (trade name, manufactured by Shipley Co., Ltd.) was used as an electrolytic solution, and
C. for about 3 minutes.

【0028】〔実施例例1〜3及び比較例5〕厚さ38
μmのポリイミド系フィルム(商品名:KaEN、東レ
・デュポン社製)の表面をプラズマ処理した後、表面処
理面にニッケル−クロム(5重量%)合金をスパッタリ
ングにより付着させ、厚さ30Å(比較例5)、70Å
(実施例1)、150Å(実施例2)、300Å(実施
例3)のニッケル−クロム合金のスパッタ層をそれぞれ
形成した。次いで、その上に銅をメッキ法により付着さ
せ、厚さ1μmの銅のメッキ層を形成した。さらに、そ
の上に電解銅厚付けメッキによって、厚さ8μmの厚付
け銅メッキ層を形成し、半導体キャリア用フィルム(2
層基材)とした。
[Examples 1-3 and Comparative Example 5] Thickness 38
After the surface of a μm polyimide-based film (trade name: KaEN, manufactured by Toray DuPont) is plasma-treated, a nickel-chromium (5% by weight) alloy is adhered to the surface-treated surface by sputtering to a thickness of 30 mm (comparative example). 5), 70Å
(Example 1) Sputtered layers of a nickel-chromium alloy of 150 ° (Example 2) and 300 ° (Example 3) were formed, respectively. Next, copper was deposited thereon by a plating method to form a copper plating layer having a thickness of 1 μm. Further, a thick copper plating layer having a thickness of 8 μm is formed thereon by electrolytic copper thick plating, and a film for a semiconductor carrier (2) is formed.
Layer substrate).

【0029】これらの半導体キャリア用フィルム(2層
基材)を使用し、比較例1と同様にして、図2に示され
るようなポリイミド系フィルム1の上に、櫛形電極5
a、5bを形成した。
Using these semiconductor carrier films (two-layer substrate), in the same manner as in Comparative Example 1, a comb-shaped electrode 5 was placed on a polyimide film 1 as shown in FIG.
a and 5b were formed.

【0030】実施例1〜3及び比較例1〜5で得られた
櫛形電極に、電圧(DC60V)を付加し、恒温恒湿槽
(FX412Pタイプ、エタック社製)の中に入れて、
85℃、85%RHの条件で、マイグレーション評価を
行った。評価は、電圧負荷状態のまま5分毎に絶縁抵抗
値を算出してマイグレーション評価とした。結果を表1
に示す。また、比較例1において、200時間経過後の
マイグレーションの発生状態を示す模式平面図を図3に
示す。
A voltage (60 V DC) was applied to the comb-shaped electrodes obtained in Examples 1 to 3 and Comparative Examples 1 to 5, and the comb-shaped electrodes were placed in a thermo-hygrostat (FX412P type, manufactured by Ettack).
The migration was evaluated under the conditions of 85 ° C. and 85% RH. The evaluation was performed by calculating the insulation resistance value every 5 minutes while maintaining the voltage load state, and used as the migration evaluation. Table 1 shows the results
Shown in FIG. 3 is a schematic plan view showing the state of occurrence of migration after 200 hours in Comparative Example 1.

【0031】[0031]

【表1】 [Table 1]

【0032】表1に示されるように、150、300Å
のニッケル−クロム合金のスパッタ層を有する実施例2
〜3は、比較例1〜5に比較して、マイグレーション発
生の時間が長くなっていることが分かる。また、70Å
のニッケル−クロム合金のスパッタ層を有する実施例1
は、70Åのニッケルのスパッタ層を有する比較例2に
比較して、マイグレーション発生の時間が長い。
As shown in Table 1, 150, 300 °
Example 2 having a nickel-chromium alloy sputtered layer
3 shows that the time of occurrence of migration was longer than that of Comparative Examples 1 to 5. Also, 70Å
Example 1 having a nickel-chromium alloy sputtered layer
Has a longer migration generation time than Comparative Example 2 having a 70 ° nickel sputtered layer.

【0033】また、図3に示されるように、比較例1で
は、櫛形電極5a、5b間にマイグレーション6の発生
が顕著であった。
As shown in FIG. 3, in Comparative Example 1, the occurrence of migration 6 between the comb electrodes 5a and 5b was remarkable.

【0034】[0034]

【発明の効果】本発明の半導体キャリア用フィルムによ
って、配線回路パターンのエッチング性やメッキ耐性を
低下させることなく、耐マイグレーション特性を著しく
向上させることができる。また、本発明の製造方法によ
って、上記半導体キャリア用フィルムが経済性をもっ
て、工業的規模で製造できる。
According to the film for a semiconductor carrier of the present invention, migration resistance can be remarkably improved without lowering the etching property and plating resistance of a wiring circuit pattern. Further, by the production method of the present invention, the film for a semiconductor carrier can be economically produced on an industrial scale.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は、本発明の半導体キャリア用フィルムの
概略断面図である。
FIG. 1 is a schematic sectional view of a semiconductor carrier film of the present invention.

【図2】図2は、ポリイミド系フィルム上に形成された
櫛形電極の平面図である。
FIG. 2 is a plan view of a comb-shaped electrode formed on a polyimide-based film.

【図3】図3は、比較例1において、200時間経過後
のマイグレーションの発生状態を示す模式平面図であ
る。
FIG. 3 is a schematic plan view showing a state of occurrence of migration after 200 hours in Comparative Example 1.

【符号の説明】[Explanation of symbols]

1:ポリイミド系フィルム 2:銅層 3:ニッケル−クロム合金のスパッタ層 4:銅のメッキ層 5a、5b:櫛形電極 6:マイグレーション 1: Polyimide film 2: Copper layer 3: Sputtered layer of nickel-chromium alloy 4: Copper plating layer 5a, 5b: Comb-shaped electrode 6: Migration

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成13年3月15日(2001.3.1
5)
[Submission date] March 15, 2001 (2001.3.1.1)
5)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0004[Correction target item name] 0004

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0004】従来、銅メッキ法では、成形されたポリイ
ミドフィルム上の密着強化層(シード層)として金属の
スパッタ層を形成し、銅メッキ後、電解銅を厚付けメッ
キして銅を析出させ厚さμm程度の銅メッキ層を形
成し、2層基材を作成していた。このスパッタ層は、金
属としてニッケル単体が使用されており、その厚さは3
0〜70Åであった。
Conventionally, in the copper plating method, a metal sputtered layer is formed as an adhesion reinforcing layer (seed layer) on a formed polyimide film, and after copper plating, electrolytic copper is deposited and plated to deposit copper. It is 7 to form a μm order of copper thickness plated layer had created a 2-layer substrate. This sputtered layer uses nickel alone as a metal and has a thickness of 3
0-70 °.

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0024[Correction target item name] 0024

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0024】〔比較例1〜4〕厚さ38μmのポリイミ
ド系フィルム(商品名:KaEN、東レ・デュポン社
製)の表面をプラズマ処理した後、表面処理面にニッケ
ル単体をスパッタリングにより付着させ、厚さ30Å
(比較例1)、70Å(比較例2)、300Å(比較例
3)、600Å(比較例4)のニッケルのスパッタ層を
それぞれ形成した。次いで、その上に銅をメッキ法によ
り付着させ、厚さ1μmの銅のメッキ層を形成した。さ
らに、その上に電解銅厚付けメッキによって、厚さμ
mの厚付け銅メッキ層を形成し、半導体キャリア用フィ
ルム(2層基材)とした。
[Comparative Examples 1 to 4] After the surface of a 38 μm-thick polyimide-based film (trade name: KaEN, manufactured by Dupont Toray) was plasma-treated, nickel alone was adhered to the surface-treated surface by sputtering. 30Å
(Comparative Example 1), 70 ° (Comparative Example 2), 300 ° (Comparative Example 3), and 600 ° (Comparative Example 4) nickel sputtered layers were formed, respectively. Next, copper was deposited thereon by a plating method to form a copper plating layer having a thickness of 1 μm. Furthermore, a 7 μm thick electrolytic copper thick plating
A copper plating layer having a thickness of m was formed to obtain a film for a semiconductor carrier (two-layer substrate).

【手続補正3】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0028[Correction target item name] 0028

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0028】〔実施例例1〜3及び比較例5〕厚さ38
μmのポリイミド系フィルム(商品名:KaEN、東レ
・デュポン社製)の表面をプラズマ処理した後、表面処
理面にニッケル−クロム(5重量%)合金をスパッタリ
ングにより付着させ、厚さ30Å(比較例5)、70Å
(実施例1)、150Å(実施例2)、300Å(実施
例3)のニッケル−クロム合金のスパッタ層をそれぞれ
形成した。次いで、その上に銅をメッキ法により付着さ
せ、厚さ1μmの銅のメッキ層を形成した。さらに、そ
の上に電解銅厚付けメッキによって、厚さμmの厚付
け銅メッキ層を形成し、半導体キャリア用フィルム(2
層基材)とした。
[Examples 1-3 and Comparative Example 5] Thickness 38
After the surface of a μm polyimide-based film (trade name: KaEN, manufactured by Toray DuPont) is plasma-treated, a nickel-chromium (5% by weight) alloy is adhered to the surface-treated surface by sputtering to a thickness of 30 mm (comparative example). 5), 70Å
(Example 1) Sputtered layers of a nickel-chromium alloy of 150 ° (Example 2) and 300 ° (Example 3) were formed, respectively. Next, copper was deposited thereon by a plating method to form a copper plating layer having a thickness of 1 μm. Further, a thick copper plating layer having a thickness of 7 μm was formed thereon by electrolytic copper thick plating, and a film for a semiconductor carrier (2) was formed.
Layer base material).

───────────────────────────────────────────────────── フロントページの続き (72)発明者 明石 芳一 埼玉県上尾市原市1333−2 三井金属鉱業 株式会社総合研究所内 (72)発明者 井口 裕 山口県下関市彦島西山町1−1−1 株式 会社エム・シー・エス内 (72)発明者 粟田 秀俊 山口県下関市彦島西山町1−1−1 株式 会社エム・シー・エス内 Fターム(参考) 4K024 AA09 AB08 BA12 BB11 BC01 GA04 GA16 4K029 AA11 BA25 BC03 BD02 CA05 GA03 4K044 AA16 AB02 AB10 BA02 BA06 BB04 BC02 CA13 CA15 CA18 5F044 KK03 MM22 MM48  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshikazu Akashi 1333-2, Hara-shi, Ageo-shi, Saitama Mitsui Mining & Smelting Co., Ltd. (72) Inventor Hiroshi Iguchi 1-1-1 Hikoshima Nishiyamacho, Shimonoseki-shi, Yamaguchi Prefecture. MC CS Co., Ltd. (72) Inventor Hidetoshi Awata 1-1-1 Hikoshima Nishiyama-cho, Shimonoseki-shi, Yamaguchi FMC Term Co., Ltd. 4K024 AA09 AB08 BA12 BB11 BC01 GA04 GA16 4K029 AA11 BA25 BC03 BD02 CA05 GA03 4K044 AA16 AB02 AB10 BA02 BA06 BB04 BC02 CA13 CA15 CA18 5F044 KK03 MM22 MM48

Claims (5)

    【特許請求の範囲】[Claims]
  1. 【請求項1】 ポリイミド系フィルムの表面に、厚さ7
    0〜500Åのニッケル−クロム合金のスパッタ層及び
    銅のメッキ層が設けられ、さらにその上に銅層が設けら
    れていることを特徴とする半導体キャリア用フィルム。
    1. A polyimide film having a thickness of 7
    A film for a semiconductor carrier comprising a nickel-chromium alloy sputtered layer of 0 to 500 ° and a copper plating layer, and a copper layer further provided thereon.
  2. 【請求項2】 上記ニッケル−クロム合金のスパッタ層
    のクロム含有量が3〜10重量%である請求項1記載の
    半導体キャリア用フィルム。
    2. The film for a semiconductor carrier according to claim 1, wherein the chromium content of the nickel-chromium alloy sputtered layer is 3 to 10% by weight.
  3. 【請求項3】 上記銅層が銅メッキ層である請求項1又
    は2記載の半導体キャリア用フィルム。
    3. The film for a semiconductor carrier according to claim 1, wherein the copper layer is a copper plating layer.
  4. 【請求項4】 上記銅メッキ層の厚さが5〜15μmで
    ある請求項3記載の半導体キャリア用フィルム。
    4. The film for a semiconductor carrier according to claim 3, wherein the thickness of the copper plating layer is 5 to 15 μm.
  5. 【請求項5】 ポリイミド系フィルムの表面をプラズマ
    処理した後、ニッケル−クロム合金をスパッタリングに
    より厚さ70〜500Åとなるように付着させ、次いで
    銅をメッキ法により付着させ、その後、電解銅厚付けメ
    ッキを行うことを特徴とする半導体キャリア用フィルム
    の製造方法。
    5. After plasma-treating the surface of the polyimide-based film, a nickel-chromium alloy is deposited by sputtering so as to have a thickness of 70 to 500 °, then copper is deposited by a plating method, and then electrolytic copper deposition is performed. A method for producing a film for a semiconductor carrier, comprising plating.
JP2001063551A 2000-12-18 2001-03-07 Semiconductor carrier film and its manufacturing method Pending JP2002252257A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000383561 2000-12-18
JP2000-383561 2000-12-18
JP2001063551A JP2002252257A (en) 2000-12-18 2001-03-07 Semiconductor carrier film and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001063551A JP2002252257A (en) 2000-12-18 2001-03-07 Semiconductor carrier film and its manufacturing method

Publications (1)

Publication Number Publication Date
JP2002252257A true JP2002252257A (en) 2002-09-06

Family

ID=26606006

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2002252257A (en)

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