JP2002217343A - Electronic device - Google Patents
Electronic deviceInfo
- Publication number
- JP2002217343A JP2002217343A JP2001008113A JP2001008113A JP2002217343A JP 2002217343 A JP2002217343 A JP 2002217343A JP 2001008113 A JP2001008113 A JP 2001008113A JP 2001008113 A JP2001008113 A JP 2001008113A JP 2002217343 A JP2002217343 A JP 2002217343A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- substrate
- electronic device
- power transistor
- radiating member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20436—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing
- H05K7/20445—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing the coupling element being an additional piece, e.g. thermal standoff
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20436—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing
- H05K7/2049—Pressing means used to urge contact, e.g. springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/842—Applying energy for connecting
- H01L2224/84201—Compression bonding
- H01L2224/84203—Thermocompression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発熱素子を含む複
数の電子部品を実装した基板を筐体に収容してなる電子
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device in which a substrate on which a plurality of electronic components including a heating element are mounted is housed in a housing.
【０００２】[0002]
【従来の技術】従来、電子装置に収容される発熱素子
（たとえば、パワートランジスタやパワーＩＣ等の電力
素子）からの熱を筐体外部へ放熱する技術がいくつか知
られている。基板に実装された発熱素子に放熱部材（ア
ルミニュウム等熱伝導性良好な金属）を取付ける、ある
いは、発熱素子を筐体に直接取付ける、といったことが
行われている。しかし、前者の場合、放熱部材は筐体に
接触していないので、放熱部材から筐体への熱の移動は
自然対流熱伝達によらねばならず発熱素子からの放熱量
に制限がある。また、後者においては、発熱素子からの
放熱量は大きくできるものの、発熱素子の端子と基板と
をリード線で電気的に接続するため、電子装置の組付け
工数が増大してコストが上昇する、また、発熱素子が筐
体に取付けられるため、基板上の他の電子部品の配置が
限定されてしまう、という問題がある。さらに、いずれ
の手法においても、発熱素子の放熱部材あるいは筐体へ
の固定はねじ止めによるため、組付け工数が増大してし
まう。2. Description of the Related Art Conventionally, there are known several techniques for dissipating heat from a heating element (for example, a power element such as a power transistor or a power IC) housed in an electronic device to the outside of a housing. A heat-dissipating member (a metal having good thermal conductivity such as aluminum) is attached to a heat-generating element mounted on a substrate, or the heat-generating element is directly attached to a housing. However, in the former case, since the heat radiating member is not in contact with the housing, the heat transfer from the heat radiating member to the housing must be performed by natural convection heat transfer, and the amount of heat radiated from the heat generating element is limited. In the latter, although the amount of heat radiation from the heating element can be increased, the terminals of the heating element and the substrate are electrically connected by lead wires, so that the number of steps for assembling the electronic device increases and the cost increases. Further, since the heating element is attached to the housing, there is a problem that the arrangement of other electronic components on the substrate is limited. Further, in any of the methods, the fixing of the heating element to the heat radiating member or the housing is performed by screwing, so that the number of assembling steps increases.
【０００３】一方、特表平６−５０７０４９号公報に開
示される発明においては、発熱素子が実装される基板表
面に熱伝導層を設け、発熱素子をこの熱伝導層に接触さ
せると共に、この熱伝導層を筐体に接触させつつ、基板
を筐体に固定している。これにより、発熱素子からの熱
が基板上の熱伝導層を経由して筐体へ移動し、筐体外部
へ放熱される。On the other hand, in the invention disclosed in Japanese Patent Application Laid-Open No. 6-507049, a heat conductive layer is provided on the surface of a substrate on which a heating element is mounted, and the heating element is brought into contact with the heat conduction layer. The substrate is fixed to the housing while the conductive layer is in contact with the housing. Thereby, heat from the heating element moves to the housing via the heat conductive layer on the substrate, and is radiated to the outside of the housing.
【０００４】[0004]
【発明が解決しようとする課題】この場合、熱伝導層
は、基板上に敷設された電気回路構成用の銅箔を利用し
ている。この銅箔厚さは通常数十ミクロンと薄いため、
放熱量を大きくするためには熱伝導層としての銅箔の幅
あるいは厚さを大きくする必要がある。幅を大きくする
と基板上の他の電子部品の実装スペースが小さくなり、
厚さの増加は基板のコストアップを伴う、という問題が
ある。また、放熱を効果的に行なうためには、銅箔の長
さを短くする、つまり、基板上で最も筐体に近い外周部
に発熱素子を実装する必要がある。このため、基板上に
おける発熱素子の場所が限られてしまい、基板の設計自
由度が低下するという問題もある。In this case, the heat conductive layer utilizes a copper foil laid on a substrate for forming an electric circuit. Since this copper foil thickness is usually as thin as tens of microns,
In order to increase the amount of heat radiation, it is necessary to increase the width or thickness of the copper foil as the heat conductive layer. Increasing the width reduces the mounting space for other electronic components on the board,
There is a problem that an increase in thickness involves an increase in the cost of the substrate. Further, in order to effectively dissipate heat, it is necessary to reduce the length of the copper foil, that is, to mount a heating element on an outer peripheral portion of the substrate closest to the housing. For this reason, the location of the heating element on the substrate is limited, and there is also a problem that the degree of freedom in designing the substrate is reduced.
【０００５】本発明は、以上の点に鑑みてなされたもの
であり、その目的は、基板上の任意の位置に実装された
発熱素子が生ずる熱を、発熱素子を押圧固定すると共に
その一部が前記筐体に接触するような放熱部材を介し
て、筐体に放熱することができる電子装置を提供するこ
とである。The present invention has been made in view of the above points, and an object of the present invention is to generate heat generated by a heating element mounted at an arbitrary position on a substrate by pressing the heating element and partially fixing the heat. An object of the present invention is to provide an electronic device capable of dissipating heat to a housing via a heat dissipating member that contacts the housing.
【０００６】[0006]
【課題を解決するための手段】本発明は上記目的を達成
する為、以下の技術的手段を採用する。In order to achieve the above object, the present invention employs the following technical means.
【０００７】本発明の請求項１に記載の電子装置は、発
熱素子を含む複数の電子部品を実装した基板と、基板を
収容し熱伝導性を有する筐体と、発熱素子が生ずる熱を
筐体に伝導させる放熱部材とを備え、この放熱部材によ
り、発熱素子を基板に押圧固定すると共に、放熱部材の
一部を筐体に接触させる構成とした。これにより、基板
上の任意の位置に実装された発熱素子が発生した熱を、
放熱部材を介して確実に筐体に放熱することができる。
この場合、請求項２のように、放熱部材を基板に保持さ
せれば、電子装置の組付け作業中において、発熱素子と
放熱部材との位置関係を容易に正確に維持できるので、
生産性を向上することができる。また、請求項３のよう
に、放熱部材と発熱素子との間に、発熱素子との接触面
積を増大する熱伝導促進部材を設けると、発熱素子が生
ずる熱を効率良く放熱部材に伝えることができる。An electronic device according to a first aspect of the present invention includes a substrate on which a plurality of electronic components including a heating element are mounted, a housing for housing the substrate and having heat conductivity, and a housing for generating heat generated by the heating element. A heat dissipating member for conducting the heat to the body is provided, and the heat dissipating member presses and fixes the heat generating element to the substrate and makes a part of the heat dissipating member contact the housing. As a result, heat generated by the heating element mounted at an arbitrary position on the substrate is
Heat can be reliably dissipated to the housing via the heat dissipating member.
In this case, if the heat radiating member is held on the substrate, the positional relationship between the heat generating element and the heat radiating member can be easily and accurately maintained during the assembling work of the electronic device.
Productivity can be improved. Further, when a heat conduction promoting member for increasing the contact area with the heat generating element is provided between the heat radiating member and the heat generating element, the heat generated by the heat generating element can be efficiently transmitted to the heat radiating member. it can.
【０００８】[0008]
【発明の実施の形態】以下、本発明を図に示す実施形態
に基づいて説明する。なお、各図において、同一構成部
分には同一符号を付してある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on an embodiment shown in the drawings. In each drawing, the same components are denoted by the same reference numerals.
【０００９】図１に、本発明の一実施形態による電子装
置１の断面図を示す。FIG. 1 is a sectional view of an electronic device 1 according to one embodiment of the present invention.
【００１０】電子装置１は、ケース５およびカバー６に
より形成される筐体の内部に、樹脂モールド型のパワー
トランジスタ３（発熱素子）や複数の電子部品（図示せ
ず）を実装した基板２を収納して構成されている。The electronic device 1 includes a substrate 2 on which a resin-molded power transistor 3 (heating element) and a plurality of electronic components (not shown) are mounted in a housing formed by a case 5 and a cover 6. It is housed and configured.
【００１１】基板２には、パワートランジスタ３および
複数の電気部品（たとえば、抵抗、コンデンサ、ＩＣ、
等。図示せず）が実装されて、電力が供給されると所定
の機能を発揮する電気回路を構成している。また、放熱
部材４が、パワートランジスタ３に接触した状態で保持
されている。図１に示すように、パワートランジスタ３
は基板２の両面に実装されている。The substrate 2 has a power transistor 3 and a plurality of electric components (for example, a resistor, a capacitor, an IC,
etc. (Not shown)) to constitute an electric circuit that performs a predetermined function when power is supplied. Further, the heat radiating member 4 is held in a state of being in contact with the power transistor 3. As shown in FIG.
Are mounted on both sides of the substrate 2.
【００１２】放熱部材４は、銅などの熱伝導性の良好な
金属をプレス加工して形成される。図２に、放熱部材４
の組付け前後の形状を示す。実線は、電子装置１へ組付
け後の形状を、破線は組付け前の形状を示す。放熱部材
４は電子装置１へ組付けられると図２に示すように弾性
変形し、接触部４ａおよび接触部４ｂは、それぞれパワ
ートランジスタ３およびケース５の内壁５ａに対して押
圧力を発生しつつ接触する。これにより、パワートラン
ジスタ３から放熱部材４へ、および放熱部材４からケー
ス５への熱伝導が確実に行われる。The heat radiating member 4 is formed by pressing a metal having good thermal conductivity such as copper. FIG.
2 shows the shape before and after assembling. The solid line indicates the shape after assembly to the electronic device 1, and the broken line indicates the shape before assembly. When the heat radiating member 4 is assembled to the electronic device 1, as shown in FIG. 2, the contact portion 4 a and the contact portion 4 b generate a pressing force against the power transistor 3 and the inner wall 5 a of the case 5, respectively. Contact. Thereby, heat conduction from the power transistor 3 to the heat dissipation member 4 and from the heat dissipation member 4 to the case 5 are reliably performed.
【００１３】放熱促進部材である放熱シート７は、熱伝
導性が良好で且つ電気絶縁性のある柔軟な高分子材料か
らなり、放熱部材４とパワートランジスタ３との間に配
設されている。これにより、パワートランジスタ３と放
熱部材４との接触部において、両者の表面の微小な凹凸
を放熱シートで埋めて、熱伝導上有効な実接触面積を増
大させて放熱性を高めることができる。The heat radiation sheet 7 as a heat radiation promotion member is made of a flexible polymer material having good thermal conductivity and electrical insulation, and is disposed between the heat radiation member 4 and the power transistor 3. Thereby, in the contact portion between the power transistor 3 and the heat radiating member 4, minute irregularities on both surfaces are filled with the heat radiating sheet, and the actual contact area effective for heat conduction can be increased to improve heat radiation.
【００１４】ケース５は、熱伝導性が良好な材質、たと
えばアルミニュウムダイキャストにより形成されてい
る。また、ケース５には、基板２を固定するためのボス
５ｂが設けられており、基板２がボルト８を介して固定
されている。The case 5 is made of a material having good thermal conductivity, for example, aluminum die-cast. The case 5 is provided with a boss 5 b for fixing the substrate 2, and the substrate 2 is fixed via bolts 8.
【００１５】カバー６も、熱伝導性が良好な材質、たと
えば、アルミニュウム板のプレス加工により形成されて
いる。カバー６はケース５に固定されて、電子装置１の
筐体を構成する。The cover 6 is also formed by pressing a material having good thermal conductivity, for example, an aluminum plate. The cover 6 is fixed to the case 5 and forms a housing of the electronic device 1.
【００１６】次に、本発明の一実施形態による電子装置
１の組付け方法について説明する。Next, a method of assembling the electronic device 1 according to one embodiment of the present invention will be described.
【００１７】図３には、第１の実施形態による電子装置
１の要部を構成する部品の分解斜視図を示す。FIG. 3 is an exploded perspective view of components constituting a main part of the electronic device 1 according to the first embodiment.
【００１８】基板２には、すでに、パワートランジスタ
３および複数の電気部品が実装されている。基板２上の
パワートランジスタ３の基板２と反対側の表面に放熱シ
ート７を載せる。The power transistor 3 and a plurality of electric components are already mounted on the substrate 2. A heat radiation sheet 7 is placed on the surface of the power transistor 3 on the substrate 2 opposite to the surface of the substrate 2.
【００１９】次に、図３に示すように放熱部材４の突起
４ｄを基板２の孔２ａに挿入し、接触部４ａによりパワ
ートランジスタ３上の放熱シート７を押圧しながら、規
制部４ｃを基板２に当接させる。続いて基板２の裏側に
突出した突起４ｄを図１に示すように折り曲げると、放
熱部材４は基板２に保持される。この時、接触部４ａは
弾性変形し、その弾性力によって接触部４ａが放熱シー
ト７を介してパワートランジスタ３を押圧している。こ
の押圧力により放熱シート７が変形し、放熱部材４とパ
ワートランジスタ３の接触面の凹凸を埋めて、接触面積
を増大させて放熱量を大きくすることができる。また、
接触部４ａの弾性変形量は、規制部４ｃが基板２に当接
することで規制される。つまり、放熱部材４のパワート
ランジスタ３への押圧力が所定の大きさになるように、
接触部４ａおよび規制部４ｃの形状が設定されている。
これにより、押圧力過大によるパワートランジスタ３の
損傷を防止できる。Next, as shown in FIG. 3, the projection 4d of the heat radiating member 4 is inserted into the hole 2a of the substrate 2, and while the heat radiating sheet 7 on the power transistor 3 is pressed by the contact portion 4a, the regulating portion 4c is Contact 2 Subsequently, when the protrusion 4 d protruding to the rear side of the substrate 2 is bent as shown in FIG. 1, the heat radiation member 4 is held by the substrate 2. At this time, the contact portion 4a is elastically deformed, and the contact portion 4a presses the power transistor 3 via the heat radiation sheet 7 by the elastic force. The heat-dissipating sheet 7 is deformed by this pressing force, and the unevenness of the contact surface between the heat-dissipating member 4 and the power transistor 3 is filled, so that the contact area can be increased and the heat radiation amount can be increased. Also,
The amount of elastic deformation of the contact portion 4a is regulated by the contact of the regulating portion 4c with the substrate 2. In other words, the pressing force of the heat radiating member 4 on the power transistor 3 becomes a predetermined magnitude.
The shapes of the contact portion 4a and the regulating portion 4c are set.
This can prevent the power transistor 3 from being damaged due to excessive pressing force.
【００２０】次に、放熱部材４の取付けが完了した基板
２をケース５にボルト８を介して固定する。この時、基
板２の上面側の放熱部材４が弾性変形して、その弾性力
により接触部４ｂはケース５の内壁５ａに押圧接触す
る。最後に、カバー６をケース５に固定すると、基板２
の下面側の放熱部材４が弾性変形して、その弾性力によ
り接触部４ｂはカバー６の内壁６ａに押圧接触する。以
上で、電子装置１の組付けが完了する。Next, the board 2 on which the heat radiating member 4 has been mounted is fixed to the case 5 via bolts 8. At this time, the heat radiating member 4 on the upper surface side of the substrate 2 is elastically deformed, and the contact portion 4b is pressed against the inner wall 5a of the case 5 by the elastic force. Finally, when the cover 6 is fixed to the case 5, the substrate 2
The heat dissipating member 4 on the lower surface side of the cover 6 is elastically deformed, and the contact portion 4b is pressed against the inner wall 6a of the cover 6 by the elastic force. Thus, the assembly of the electronic device 1 is completed.
【００２１】ここで、十分な放熱効果を得るために、パ
ワートランジスタ３が発生する熱を放熱部材４を介して
放熱する筐体は、熱伝導性が良好且つ熱容量が大きいこ
とが望ましい。本発明の一実施形態による電子装置１で
は、ケース５はアルミダイキャスト製、カバー６はアル
ミ板製であり、ケース５の放熱量はカバー６の放熱量よ
りも大きい。一方、基板２の上面に実装されるパワート
ランジスタ３が生ずる熱はケース５に放熱され、基板２
の下面に実装されるパワートランジスタ３が生ずる熱は
カバー６に放熱される。本発明の一実施形態による電子
装置１では、基板２の上面側および下面側それぞれの発
熱量と、ケース５およびカバー６それぞれの放熱量を整
合させて、電子装置１の作動中におけるパワートランジ
スタ３の温度が許容値を越えないように、パワートラン
ジスタ３の配置を決めている。Here, in order to obtain a sufficient heat radiating effect, it is desirable that the housing for radiating the heat generated by the power transistor 3 through the heat radiating member 4 has good thermal conductivity and large heat capacity. In the electronic device 1 according to one embodiment of the present invention, the case 5 is made of aluminum die-cast, and the cover 6 is made of aluminum plate, and the heat radiation of the case 5 is larger than that of the cover 6. On the other hand, heat generated by the power transistor 3 mounted on the upper surface of the substrate 2 is radiated to the case 5 and
The heat generated by the power transistor 3 mounted on the lower surface of the device is radiated to the cover 6. In the electronic device 1 according to the embodiment of the present invention, the amount of heat generated on the upper surface and the lower surface of the substrate 2 is matched with the amount of heat radiated from the case 5 and the cover 6 so that the power transistor 3 during operation of the electronic device 1 is adjusted. Of the power transistor 3 is determined so that the temperature does not exceed the allowable value.
【００２２】以上説明した本発明の一実施形態による電
子装置１では、放熱部材４を設け、この放熱部材４を、
パワートランジスタ３の基板２と反対側表面およびケー
ス５の内壁５ａに、放熱部材４の弾性変形力により押圧
接触させる構成とした。これによって、ねじ締め等が不
要な簡易な手段によって、基板２上の任意の位置に実装
されたパワートランジスタ３からの熱をケース５へ確実
に放熱することができる。また、放熱部材４が基板２上
で占める面積は、略パワートランジスタ３が占める面積
と同じである。従って、基板２上のスペースを電気回路
用として有効に利用することができる。In the electronic device 1 according to the embodiment of the present invention described above, the heat radiating member 4 is provided.
The surface of the power transistor 3 opposite to the substrate 2 and the inner wall 5a of the case 5 are brought into pressure contact with the elastic deformation force of the heat radiating member 4. Thus, heat from the power transistor 3 mounted at an arbitrary position on the substrate 2 can be reliably radiated to the case 5 by simple means that does not require screwing or the like. The area occupied by the heat radiating member 4 on the substrate 2 is substantially the same as the area occupied by the power transistor 3. Therefore, the space on the substrate 2 can be effectively used for electric circuits.
【００２３】また、放熱部材４が基板２に保持される構
成としたので、電子装置１の組付け作業中において放熱
部材４が所定の位置に保持されるので作業性を向上する
ことができる。Since the heat radiating member 4 is held by the substrate 2, the heat radiating member 4 is held at a predetermined position during the assembling work of the electronic device 1, so that the workability can be improved.
【００２４】さらに、放熱部材４とパワートランジスタ
３との間に放熱シート７を配設した。放熱部材４の押圧
力により放熱シート７が変形し、放熱部材４とパワート
ランジスタ３の接触面の凹凸を埋めて、接触面積を増大
させて放熱量を大きくすることができる。Further, a heat radiating sheet 7 is provided between the heat radiating member 4 and the power transistor 3. The heat-dissipating sheet 7 is deformed by the pressing force of the heat-dissipating member 4, and the unevenness of the contact surface between the heat-dissipating member 4 and the power transistor 3 is filled, so that the contact area can be increased and the heat radiation amount can be increased.
【００２５】次に、以上説明した、本発明の一実施形態
による電子装置１の変形例について説明する。Next, a modification of the electronic device 1 according to the embodiment of the present invention described above will be described.
【００２６】図４に、本発明の一実施形態による電子装
置１の第１変形例の断面図を示す。第１変形例は、上述
の一実施形態に対して放熱部材４の形状を変更したもの
である。すなわち、放熱部材４の接触部４ｂは、ケース
５の内周壁面（内側面）に押圧接触している。この場合
も、パワートランジスタ３の放熱に関して一実施形態の
場合と同様の効果が得られる。FIG. 4 is a sectional view of a first modification of the electronic device 1 according to one embodiment of the present invention. In the first modified example, the shape of the heat radiation member 4 is changed from that of the above-described embodiment. That is, the contact portion 4 b of the heat radiation member 4 is in press contact with the inner peripheral wall surface (inner surface) of the case 5. Also in this case, the same effect as that of the embodiment can be obtained with respect to heat dissipation of the power transistor 3.
【００２７】図５に、本発明の一実施形態による電子装
置１の第２変形例の断面図を示す。第２変形例も、上述
の一実施形態に対して放熱部材４の形状を変更したもの
である。すなわち、放熱部材４の接触部４ｂは、ボス５
ｂと基板２とに挿まれており、ボルト８を締付けること
で基板２の固定と放熱部材４のケース５への接触が同時
に実施される。この場合も、パワートランジスタ３が発
生する熱をの放熱に関して一実施形態の場合と同様の効
果が得られる。FIG. 5 is a sectional view of a second modification of the electronic device 1 according to one embodiment of the present invention. The second modification is also one in which the shape of the heat radiating member 4 is changed from the above-described embodiment. That is, the contact portion 4b of the heat radiation member 4 is
b and the substrate 2, and by fixing the bolt 8, the fixing of the substrate 2 and the contact of the heat radiation member 4 to the case 5 are simultaneously performed. Also in this case, the same effect as that of the embodiment can be obtained with respect to heat dissipation of the heat generated by the power transistor 3.
【００２８】図６に、本発明の一実施形態による電子装
置１の第３変形例の断面図を示す。第３変形例も、上述
の一実施形態に対して放熱部材４の形状を変更したもの
である。第３変形例では、基板２はケース５とカバー６
との間に配設され、カバー６と共締めでケース５に固定
されている。放熱部材４の接触部４ｂは、図６で示すよ
うに、ケース５と基板２とに挿まれており、カバー６お
よび基板２と共締めでケース５に固定されると共に、ケ
ース５に接触している。この場合も、パワートランジス
タ３の放熱に関して一実施形態の場合と同様の効果が得
られる。FIG. 6 is a sectional view of a third modification of the electronic device 1 according to one embodiment of the present invention. The third modification is also one in which the shape of the heat radiating member 4 is changed from the above-described embodiment. In the third modification, the substrate 2 includes a case 5 and a cover 6.
And is fixed to the case 5 together with the cover 6. As shown in FIG. 6, the contact portion 4 b of the heat radiating member 4 is inserted between the case 5 and the substrate 2, is fixed to the case 5 by fastening together with the cover 6 and the substrate 2, and contacts the case 5. ing. Also in this case, the same effect as that of the embodiment can be obtained with respect to heat dissipation of the power transistor 3.
【００２９】なお、以上説明した、本発明の一実施形態
による電子装置１およびその変形例において、発熱素子
はパワートランジスタ３としたが、これに限る必要はな
く、サイリスタ、集積回路等であってもよい。In the above-described electronic device 1 according to the embodiment of the present invention and its modification, the heating element is the power transistor 3, but is not limited to this, and may be a thyristor, an integrated circuit, or the like. Is also good.
【００３０】また、本発明の一実施形態による電子装置
１およびその変形例において、筐体（ケース５およびカ
バー６）はアルミニュウム製としたが、他の材質、たと
えば熱伝導性樹脂等により形成してもよい。Further, in the electronic device 1 according to the embodiment of the present invention and its modification, the housing (the case 5 and the cover 6) is made of aluminum, but is made of another material such as a heat conductive resin. You may.
【００３１】また、放熱促進手段として放熱シート７を
用いているが、これに限る必要はなく、たとえば熱伝導
性の良いシリコンゲルを塗布してもよい。Although the heat radiation sheet 7 is used as the heat radiation promotion means, the heat radiation sheet is not limited to this. For example, a silicon gel having good heat conductivity may be applied.
【図１】本発明の一実施形態による電子装置１の断面図
である。FIG. 1 is a sectional view of an electronic device 1 according to an embodiment of the present invention.
【図２】本発明の一実施形態による放熱部材４の組付け
前後における形状を示す断面図である。FIG. 2 is a cross-sectional view showing a shape before and after assembly of a heat radiation member 4 according to an embodiment of the present invention.
【図３】本発明の一実施形態による電子装置１の要部構
成を示す分解斜視図である。FIG. 3 is an exploded perspective view showing a configuration of a main part of the electronic device 1 according to the embodiment of the present invention.
【図４】本発明の一実施形態による電子装置１の第１変
形例の断面図である。FIG. 4 is a sectional view of a first modification of the electronic device 1 according to the embodiment of the present invention.
【図５】本発明の一実施形態による電子装置１の第２変
形例の断面図である。FIG. 5 is a sectional view of a second modification of the electronic device 1 according to the embodiment of the present invention.
【図６】本発明の一実施形態による電子装置１の第３変
形例の断面図である。FIG. 6 is a sectional view of a third modification of the electronic device 1 according to the embodiment of the present invention.
１ 電子装置 ２ 基板 ２ａ 孔 ３ パワートランジスタ（発熱素子） ４ 放熱部材 ４ａ、４ｂ 接触部 ４ｃ 規制部 ４ｄ 突起 ５ ケース（筐体） ５ａ 内壁 ６ カバー（筐体） ６ａ 内壁 ７ 放熱シート（放熱促進手段） ８ ボルト DESCRIPTION OF SYMBOLS 1 Electronic device 2 Substrate 2a hole 3 Power transistor (heating element) 4 Heat dissipation member 4a, 4b Contact part 4c Regulation part 4d Projection 5 Case (housing) 5a Inner wall 6 Cover (housing) 6a Inner wall 7 Heat dissipation sheet (heat dissipation means) ) 8 bolts
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｋ 7/20 Ｈ０１Ｌ 23/36 Ｍ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05K 7/20 H01L 23/36 M
Claims (3)
た基板と、 前記基板を収容し熱伝導性を有する筐体と、 前記発熱素子が生ずる熱を前記筐体に伝導させる放熱部
材とを備え、 前記放熱部材により、前記発熱素子を前記基板に押圧固
定すると共に、前記放熱部材の一部を前記筐体に接触さ
せるように構成されていることを特徴とする電子装置。1. A substrate on which a plurality of electronic components including a heating element are mounted, a housing for housing the substrate and having heat conductivity, and a heat dissipating member for conducting heat generated by the heating element to the housing. The electronic device, wherein the heat radiating member is configured to press and fix the heat generating element to the substrate, and to make a part of the heat radiating member contact the housing.
ことを特徴とする請求項１に記載の電子装置。2. The electronic device according to claim 1, wherein the heat radiating member is held by the substrate.
前記発熱素子との接触面積を増大する熱伝導促進部材を
設けたことを特徴とする請求項１または請求項２のいず
れかに記載の電子装置。3. Between the heat dissipating member and the heating element,
3. The electronic device according to claim 1, further comprising a heat conduction promoting member for increasing a contact area with the heating element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001008113A JP2002217343A (en) | 2001-01-16 | 2001-01-16 | Electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001008113A JP2002217343A (en) | 2001-01-16 | 2001-01-16 | Electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002217343A true JP2002217343A (en) | 2002-08-02 |
Family
ID=18875764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001008113A Withdrawn JP2002217343A (en) | 2001-01-16 | 2001-01-16 | Electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002217343A (en) |
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