JP2002198255A - Laminated electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laminated electronic component which increases its effective area as an internal electrode layer is smaller in thickness, has a large capacitance, and is free from internal defects such as delamination. SOLUTION: The laminated electronic component has external electrodes 3 formed on the ends of an electronic component main body 1, in which dielectric layers 7 and internal electrode layers 5 are alternately stacked one over another. The internal electrode layers 5 are made of Ni metal and have metallic parts 15 and electrodeless parts 13. The internal electrode layers 5 are connected to the external electrodes 3. As to the laminated electronic component, Am/At>=0.8 is satisfied where At represents the overall area including the electrodeless parts 13 of the internal electrode layers 5 and Am represents an area of the metallic part.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a multilayer electronic component, and more particularly to a multilayer electronic component used for a multilayer ceramic capacitor.

[0002]

2. Description of the Related Art In recent years, as electronic devices have become smaller and higher in density, multilayer electronic components, for example, multilayer electronic components, have been required to have small size, high capacity, and high reliability. The thickness of the body layer and the number of stacked layers have been increased, the thickness of the internal electrode layer has been reduced, and the dielectric constant of the dielectric layer has been increased.
For example, a high-capacity multilayer electronic component in which the thickness of a dielectric layer is 13 μm or less and the number of dielectric layers is 100 or more has been developed.

[0003] Such a laminated electronic component relates to thinning of internal electrode layers, for example, as disclosed in JP-A-11-2511.
Those as disclosed in 73 JP are known.

[0004] The multilayer electronic component disclosed in this publication is
Ni having an average particle size of 10 to 200 nm as an internal electrode layer
By using a conductive paste containing metal powder to form an internal electrode pattern on the main surface of the dielectric green sheet and forming the internal electrode layer to have a thickness of 0.2 to 0.7 μm, The thickness of the layer is reduced to improve the capacitance and suppress the occurrence of delamination.

[0005]

However, in the multilayer electronic component disclosed in Japanese Patent Application Laid-Open No. H11-251173, the internal electrode layer is formed of ultrafine Ni metal powder, so When the metal powder of the internal electrode pattern shrinks by firing, there is a problem that the effective area of the internal electrode layer is greatly reduced and the capacitance is reduced.

In addition, since the ultrafine metal powder as described above is used for the conductive paste for forming the internal electrode layer, the surface of the metal powder is easily oxidized, and the conductivity of the metal powder itself deteriorates. However, even after firing, there is a problem that the conductivity of the internal electrode layer is deteriorated due to the surface oxide layer.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a laminated electronic component having a high capacitance and having no internal defects such as delamination, by reducing the thickness of the internal electrode layer and expanding the effective area. I do.

[0008]

According to the present invention, there is provided a multilayer electronic component in which a dielectric layer and an internal electrode layer comprising a Ni metal film and having a metal portion and an electrodeless portion are alternately laminated. In the multilayer electronic component having an external electrode connected to the internal electrode layer at an end of the multilayer electronic component, the entire area including the non-electrode part of the internal electrode layer is defined as At, and the area of the metal part is defined as A.
When m is satisfied, the relationship of Am / At ≧ 0.8 is satisfied.

According to this structure, even if the thickness of the internal electrode layer is reduced to 1.5 μm or less, electrical conduction is reliably obtained, and the laminated type including the Ni internal electrode layer having almost no internal structural defects is provided. Electronic components can be obtained. Further, by increasing the metal occupation ratio of the internal electrode layers of the electronic component body, the effective area of the internal electrode layers of the multilayer electronic component can be increased, and the capacitance can be improved.

In the above-mentioned multilayer electronic component, in the X-ray diffraction of the main surface of the internal electrode layer, the peak intensity of the crystal plane (200) is I (200) and the peak intensity of the crystal plane (111) is I
When (111) is set, I (200) / I (111) ≧
It is desirable to satisfy the relationship of 0.7.

As described above, the metal film formed so that the crystal plane is aligned with the film plane has crystal grains oriented,
Generally, it has a high yield stress even at high temperature, so the metal film does not easily shrink at high temperature during firing, has high malleability and high resistance to firing shrinkage, and the internal electrode layer should maintain a high continuous layer can be, the internal electrode layers of high strength can be obtained even if thin. Thus, since the firing temperature of the electronic component body can be increased, the densification of the dielectric layer can be promoted, the capacitance and the insulating property of the multilayer electronic component can be increased, and delamination can be suppressed.

In the above-mentioned laminated electronic component, it is desirable that the internal electrode layer is formed using a rolled metal film. Since the internal electrode layer is formed by using a metal film formed by rolling in advance, it has excellent oxidation resistance and obtains high conductivity than a conventional conductive material made of ultrafine metal powder. be able to.

Further, since a metal film having a large area can be formed in a short time by rolling, an internal electrode layer having a large effective area can be easily formed, and the capacitance of the multilayer electronic component can be easily reduced. Can be enhanced.

[0014]

One mode of the embodiment of the invention (Structure) A multilayer ceramic capacitor as multilayer electronic component of the present invention will be described in detail based on the schematic cross-sectional view of FIG.

The multilayer ceramic capacitor of the present invention is formed by forming external electrodes 3 at both ends of a rectangular parallelepiped electronic component body 1.

The electronic component body 1 is configured by alternately stacking the internal electrode layers 5 and the dielectric layers 7 and further stacking the insulating layers 9 made of the same material as the dielectric layers 7.

The internal electrode layer 5 is formed by a plating method or a rolling method. As shown in FIG. 2A, the internal electrode layer 5 is made of a uniform Ni metal film having almost no metal defects in a plane. It is configured.

Further, as shown in FIG. 2 (b), the internal electrode layer 5 formed by the plating method
Are continuously connected, and there is almost no internal structural defect such as the electrodeless portion 13.

Further, in the internal electrode layer 5 formed by the rolling method, as shown in FIG. 2 (c), the crystal grains 11 are flat when viewed in cross section.
The major axis direction is formed in parallel with the main surface of the internal electrode layer 5.

In the internal electrode layer 5 formed by such a plating method or a rolling method, the effective area can be increased, and the capacitance can be increased and stabilized.

In the multilayer ceramic capacitor of the present invention, when the entire area of the internal electrode layer 5 including the non-electrode portion 13 is At and the area of the metal portion 15 is Am, the metal occupancy ratio (Am / At) ) Satisfies the relationship of Am / At ≧ 0.8.

On the other hand, when Am / At <0.8, the non-electrode portion 13 of the internal electrode layer 5 increases, and the effective area of the internal electrode layer 5 decreases, and the capacitance of the multilayer ceramic capacitor decreases. Because you do.

According to such a configuration, even if the internal electrode layer 5 and the dielectric layer 7 of the multilayer electronic component are thinly and highly laminated, electrical conduction is reliably obtained, and Ni without any internal structural defects is obtained. A multilayer electronic component including the internal electrode layer 5 made of metal can be formed. Further, by increasing the metal occupation ratio of the internal electrode layer 5 of the electronic component body 1, it is possible to increase the effective area of the internal electrode layer 5 of the multilayer electronic component, it is possible to improve the electrostatic capacity.

In particular, the metal occupancy of the internal electrode layer 5 (A
m / At) is desirably high in order to improve the capacitance of the multilayer ceramic capacitor.
In order to reinforce the bonding between the dielectric layer 7 and the internal electrode layer 5 that are bonded to each other, it is desirable to form a connecting portion between the dielectric layers in a part of the internal electrode layer 5, Is more preferably in the range of 0.8 to 0.95.

The internal electrode layer 5 is formed of Ni metal, and its crystal structure is the same as that of the internal electrode layer 5.
When the principal surface is a diffraction surface, it is represented by an X-ray diffraction pattern as shown in FIG.

In the X-ray diffraction pattern of the main surface of the internal electrode layer 5, the peak intensity of the crystal plane (200) is expressed by I
(200), the peak intensity of the crystal plane (111) I (11
X-ray diffraction peak intensity ratio I (200) /
I (111) is, I (200) / I (111) ≧ 0.7
It is desirable to satisfy the following relationship.

By satisfying this relationship, the crystal grain 1
1 can be formed to form the internal electrode layer 5 oriented parallel to the film surface.

In general, since the metal film has a high yield stress even at a high temperature, the metal film hardly shrinks at a high temperature during firing,
It has high malleability and high resistance to firing shrinkage, and the internal electrode layer can maintain a high continuous layer.

The peak of the crystal plane (200) of the crystal grain 11 of the internal electrode layer 5 made of Ni metal is 2 in the X-ray diffraction diagram when Cu-kα ray is used as the X-ray source.
It occurs near θ = 52 °, and the peak of the crystal plane (111) occurs near 2θ = 45 °. And these X
The crystal orientation of the metal film can be evaluated by capturing the height of the X-ray diffraction peak as the X-ray diffraction intensity and deriving the ratio of the two X-ray diffraction intensities according to the above relationship.

In the multilayer electronic component of the present invention, the intensity ratio of the X-ray diffraction peaks is preferably 1.0 from the viewpoint of crystal grain orientation.
It is desirably in the range of -2.0.

As described above, the thickness of the internal electrode layer 5 is preferably 1.5 μm or less from the viewpoint of miniaturization and thinning of the multilayer electronic component, and prevents the internal electrode layer 5 from delamination. In order to suppress the cutting of the internal electrode layer 5 and the formation of holes, and to further enhance the reliability, in particular, 0.4 to
It is desirable to be in the range of 1.2 μm.

The thickness variation of the internal electrode layer 5 is preferably 0.15 μm or less for stabilizing the capacitance and improving and stabilizing the insulation resistance.

The internal electrode layer 5 formed by plating is made of Am / A
t: 0.8 or more, X-ray peak intensity ratio: 0.7 or more, thickness: 0.4 to 0.6 μm, thickness variation: 0.004 μm
When the rolling method is used, Am / At is 0.9 or more, X-ray peak intensity ratio is 1 or more, and thickness is 0.4 to 0.6.
μm and the thickness variation can be 0.007 μm. In particular,
It is desirable to form by the rolling method from the point that the X-ray peak intensity ratio is 1.

(Production Method / Material) Next, a method for producing a multilayer electronic component comprising the multilayer ceramic capacitor of the present invention will be described.

As the dielectric material, for example, BaTiO
₃ -MnO-MgO-Y ₂ O dielectric powder and sintering aid such ₃ is not always can be suitably used is not limited thereto.
Among these dielectric materials, the main raw material BaTiO ₃ powder is obtained by a solid-phase method, a liquid-phase method (such as passing through an oxalate),
It is synthesized by a hydrothermal synthesis method or the like, of which the hydrothermal synthesis method is suitably used because of its narrow particle size distribution and high crystallinity. The specific surface area of the BaTiO ₃ powder is 1.
7~6.6 (m ² / g) are preferable.

As a method for forming a dielectric green sheet using the raw material powder having such a large specific surface area, a doctor blade method, a pulling method, a reverse roll coater method, a gravure coater method, and a screen printing method are preferably used. Used. In particular, a doctor blade method is used to form a thin dielectric green sheet.

Specifically, powders of these dielectric materials,
It is formed by applying a ceramic slurry containing a binder and a solvent on a carrier film, casting at a high speed, and drying.

The thickness of the dielectric green sheet formed by such a method is 12 μm or less, and particularly, 1.5 to 5 μm for the reason of increasing the size and the capacity of the multilayer electronic component.
It is desirable to be formed in the range of.

The internal electrode layer 5 formed by plating used in the multilayer electronic component of the present invention is obtained by applying a palladium activating treatment solution on a previously surface-treated film, performing an activation treatment, A Ni metal film is formed on the film by electroless Ni plating using a hydrazine or boron-based reducing agent.

Alternatively, the internal electrode layers 5 may be formed in a predetermined pattern.
Prepare a mask with holes formed only in the portion that contributes to the above, superimpose on the film, perform palladium activation treatment from the mask side of the superimposed two-piece film, and then perform electroless Ni plating Can also.

As a method of forming a metal film to be the internal electrode layer 5, in addition to a chemical film formation method such as an electroless Ni plating method, a metal film is formed by a physical film formation method such as a sputtering method or a vapor deposition method. It is also possible to form.

Further, in addition to such a method, the film-like internal electrode layer 5 can be formed using a metal film formed by rolling. The rolled metal film formed by rolling in this way utilizes the malleability, which is the inherent property of metal,
It is formed by repeatedly rolling a metal plate at a rolling reduction of about 50%, and by such a rolling process, the crystal grains can be oriented parallel to the rolling surface.

Since such a rolled metal film is formed by repeating rolling and lamination of a metal film,
The metal film has a stacked structure, and an oxide film such as NiO is formed at the stacked interface of the metal film. That is, the metal oxide and Ni metals, it is preferable that a structural repeat of Ni / NiO / Ni / NiO ··· layered. This oxide film has a higher melting point (1543 ° C.) than that of metallic Ni and a melting point of 1960 ° C., and the heat resistance of the internal electrode layer 5 is increased and the thermal deformation is reduced by the effect of such a composite component. .

Then, the internal electrode pattern in which the metal film is formed on the film is transferred to a dielectric green sheet to form a dielectric green sheet on which the internal electrode pattern is formed.

As a method of transfer, a method of using an adhesive on a film or a method of punching out with a mold having a convex portion corresponding to an internal electrode pattern and transferring to a dielectric green sheet is suitably adopted.

Incidentally, such a metal film is, as described above,
In addition to being once formed on a film and then transferred onto a dielectric ceramic green sheet, it can also be formed directly on a dielectric green sheet.

The metal material of the internal electrode layer 5 is as follows.
Ni metal is used in terms of matching with the firing temperature of the dielectric material constituting the electronic component body 1, metal conductivity, and price.

Further, since such an internal electrode pattern does not contain an organic resin unlike an internal electrode pattern formed by a normal conductive paste, the adhesiveness with a dielectric green sheet is improved, and the dielectric In order to allow the body layer 7 and the internal electrode layer 5 to be integrated, it is desirable that the surface of the internal electrode pattern formed on the film on the metal film side be roughened.

The surface roughness (Ra) of the metal film is 0.0
It is preferably from 03 to 0.015 μm.

Further, by applying a solvent for dissolving the organic resin contained in the dielectric green sheet or a contact liquid composed of the organic resin to the surface of the metal film on the film, the internal electrode pattern and the dielectric green sheet are separated. Adhesion can also be enhanced.

Next, the current-resistant green sheets on which the internal electrode patterns formed as described above are formed are laminated.
A plurality of dielectric sheets on which no internal electrode pattern is formed are laminated on the upper and lower surfaces to form a laminated molded body.

Next, the molded laminate is cut into predetermined dimensions to form a molded electronic component body.

Next, the molded body of the electronic part main body was
After de-buying at 500 to 800 ° C. in a low oxygen atmosphere of 0 to 300 ° C. or oxygen partial pressure of 0.1 to 1 Pa, baking is performed at 1100 to 1400 ° C. for 2 to 3 hours in a non-oxidizing atmosphere, and the electronic component body 1 is manufactured. Make it.

As described above, by using the internal electrode layer 5 whose Am / At is 0.8 or more, firing can be performed at a temperature higher than a temperature at which a normal electronic component body 1 formed using a conductive paste is manufactured. . In particular, when a rolled metal film having high malleability and high resistance to firing shrinkage is used as the internal electrode layer 5, the firing shrinkage of the internal electrode layer 5 is reduced even when firing is performed at a high temperature, and the density of the dielectric layer 7 is reduced. The internal electrode layer 5
And the bonding property can be strengthened.

Therefore, when the electronic component body 1 in which the dielectric layers 7 and the internal electrode layers 5 are alternately laminated is fired, the internal electrode layers 5 formed by using a general conductive paste containing a metal powder are formed. In comparison, baking at a higher temperature is possible, so that the density of the dielectric layer 7 can be increased.
The internal electrode layer 5 having a large effective area can be formed,
The capacitance of the multilayer electronic component can be increased, and the moisture resistance can be improved.

Further, as described above, by using a highly oriented metal film having high resistance to malleability and firing shrinkage, the internal electrode layer 5 has high strength even if it is made thin. In addition, the occurrence of tears and voids in the internal electrode layer 5 is small, and the occurrence of internal defects such as a decrease in capacitance, a variation in capacitance, and delamination can be suppressed.

Next, it desired to obtain the dielectric properties, low oxygen partial pressure of the oxygen partial pressure of about 0.1 to 10 ^-4 Pa, 900
Heat treatment may be performed at 1100 ° C. for 3 to 10 hours.

Next, an external electrode paste containing a base metal such as Cu or Ni is applied to the electronic component body 1, dried and baked to form an external electrode 3.
For example, Ni plating layer, Sn plating layer or Sn plating layer
By forming a Pb alloy plating layer, the multilayer electronic component of the present invention can be obtained. These are to prevent solder erosion of the external electrode 3 and to supplement solder wettability.

(Operation) In the multilayer electronic component configured as described above, the internal electrode layer 5 is formed by plating or rolling, and the total area of the internal electrode layer 5 including the non-electrode portion 13 is At. When the area of the metal part 11 is Am, the metal occupancy ratio satisfies the relationship of Am / At ≧ 0.8, so that electrical conduction is reliably obtained and Ni metal having almost no internal structural defects is used. Thus, the effective area of the internal electrode layer 5 of the laminated electronic component in which the internal electrode layer 5 is formed to be thin and highly laminated can be increased, and the capacitance can be improved.

In the X-ray diffraction of the main surface of the internal electrode layer 5, the peak intensity of the crystal plane (111) is set to I (11).
1) When the peak intensity of the crystal plane (200) is I (200), the X-ray diffraction peak intensity ratio is I (200) / I
By forming a metal film that satisfies the relationship of (111) ≧ 0.7, oriented crystal grains 11 are formed on the film surface, and thus have high resistance to malleability and firing shrinkage. Is formed, high-temperature firing is possible, and a higher-density dielectric layer can be formed. Therefore, the capacitance of the multilayer electronic component can be increased, the insulating property can be improved, and delamination can be suppressed. it can.

[0061]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, BaTiO ₃ , MgCO ₃ , MnCO ₃
And Y ₂ O ₃ powder and CaO, Si as grain boundary phase components
A 9 μm-thick dielectric green sheet was prepared by preparing a ceramic slurry composed of O _{2 and the} like, and butyral resin and toluene as organic components, and applying this on a PET film by a doctor blade method.

Next, this dielectric green sheet is made of PET.
After peeling from the film, ten sheets were laminated to form an end face green sheet layer. After drying the end face green sheet layer, the end face green sheet layer was placed on a base plate, pressed with a press machine and adhered to the base plate.

On the other hand, the same ceramic slurry as described above was applied on a PET film by a doctor blade method, and dried to form a dielectric green sheet having a thickness of 3.5 μm.

Also, a Ni thin film pattern is formed on a PET film by an electroless plating method, transferred to a ceramic green sheet, and then peeled off to form a dielectric green sheet on which a film-like internal electrode pattern is formed. Was prepared.

Further, similarly to the electroless plating film, a 0.6 μm thick Ni
The rolled metal film is patterned by etching to form an internal electrode pattern made of the rolled metal film, which, like the electroless plated film, is transferred onto a ceramic green sheet and then peeled off to form a film having a thickness of 0.6 μm. A dielectric green sheet having the internal electrode pattern formed thereon was produced.

Thereafter, these film-like internal electrode sheets are laminated on the end face green sheet layer.
The end face green sheet layers were laminated to prepare a temporary laminate.

Next, the temporary laminated body was placed on a mold, and the pressure was gradually increased from the laminating direction by a pressing plate of a press machine to perform pressure bonding to produce a laminated molded body. Thereafter, the laminated molded body was cut into a predetermined chip shape to produce an electronic component body molded body.

Next, heating was performed at 300 ° C. in the air or at 500 ° C. in an oxygen / nitrogen atmosphere of 0.1 Pa to remove the copper. Furthermore, in an oxygen / nitrogen atmosphere of 10 ^-7 Pa, and calcined for 2 hours at a temperature shown in Table 1, further, the 10 ^-2 Pa oxygen /
Heat treatment was performed at 1000 ° C. in a nitrogen atmosphere to obtain an electronic component body 1.

Thereafter, a Cu paste is applied to the end surface of the electronic component body 1 and baked at 900 ° C.
Plating was performed to form the external electrodes 3 connected to the internal electrode layers 5 to produce a multilayer electronic component.

Also, a laminated electronic component in which the internal electrode layer 5 was formed of a conductive paste was prepared as a comparative sample. The internal electrode layer 5 was a mesh-shaped internal electrode layer 5 due to the structure of the metal surface of the internal electrode layer 5.

[0071] It is this way the internal electrode layer thickness of the dielectric layer 7 interposed between 5 to about 3 [mu] m, the thickness of the internal electrode layer 5 of the multilayer ceramic capacitor thus obtained about 0.6 .mu.m, the dielectric layer 7 Was 199 layers.

Next, for each of the prepared samples,
Ten of each were extracted, peeled and broken at the interface between the internal electrode layer 5 and the dielectric layer 7 of the multilayer electronic component, the surface of the internal electrode layer 5 was exposed, and the surface was subjected to SEM observation. The metal occupation ratio (Am / At) per 1 mm ² of the dielectric layer 15 and the dielectric layer 7 was determined. X-ray diffraction was performed on the same sample, and the crystal plane (200) peak and the crystal plane (11) were measured.
1) The X-ray diffraction intensity of the peak was measured, and the crystal face (20
The X-ray peak intensity ratio of 0) was obtained using the above-mentioned relational expression.

Next, the capacitance at a frequency of 1 kHz and an AC voltage of 1 V was measured for each of the 1000 samples prepared using a capacitance meter.

[0074] The temperature 125 ° C., after the high-temperature acceleration test for 500 hours at an applied voltage of 10V, the insulation resistance at an insulation resistance tester was measured, the following 10 ⁸ Omega is defective, were counted number of defects. Table 1 shows the results.

[0075]

[Table 1]

As is evident from the results in Table 1, the sample No. 1 prepared by forming the internal electrode layer 5 was manufactured. In Nos. 1 to 6, the metal occupation ratio was 0.8 or more and the X-ray peak intensity ratio was 0.7 or more, and the characteristics of the multilayer ceramic capacitor could be improved. In particular, Sample No. using a rolled film as the internal electrode layer 5 4
~ 6 shows a high X-ray peak intensity ratio even at a firing temperature higher than 1280 ° C, the crystal orientation degree is maintained high,
The capacitance was high. FIG. 5 shows an X-ray diffraction pattern.

On the other hand, the internal electrode layer 5 was formed of a conductive paste, and the sample No. 5 having the mesh-shaped internal electrode layer was formed. 7, 8
Since the metal occupation ratio was low, the capacitance was lower than that of the sample in which the film-like internal electrode layer was formed, and the number of defects in the high-temperature acceleration test was large.

[0078]

According to the multilayer electronic component of the present invention, a film-like internal electrode layer made of Ni metal and having an electrode-less portion is used as the internal electrode layer, and the metal occupation ratio of the internal electrode layer is increased. , The effective area of the internal electrode layer of the laminated electronic component having a thin and high lamination can be increased, the capacitance can be improved,
Delamination can be suppressed.

Further, by using a metal film having a crystal orientation as the film-like internal electrode layer, an internal electrode layer having high malleability and high resistance to firing shrinkage is formed, and high-temperature firing becomes possible. Since a dielectric layer can be formed, the capacitance of the multilayer electronic component can be increased, and the moisture resistance can be improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a laminated electronic component of the present invention formed using a film-like internal electrode layer.

FIG. 2A is a schematic plan view showing a film-like internal electrode layer formed on a dielectric layer, and FIG. 2B is a schematic plan view showing a film-like internal electrode layer laminated with a dielectric layer. . (C) is a schematic plan view showing an internal electrode layer made of a metal film that is laminated with a dielectric layer and is crystallized.

FIG. 5 is an X-ray diffraction diagram. FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electronic component main body 3 External electrode 5 Internal electrode layer 7 Dielectric layer 9 Insulating layer 11 Crystal particle 13 Non-electrode part 15 Metal part

Claims (3)

[Claims] An internal electrode layer is connected to an end of an electronic component body in which a dielectric layer and an internal electrode layer made of a Ni metal film and having a metal portion and an electrodeless portion are alternately laminated. In a multilayer electronic component having external electrodes formed, when the total area including the non-electrode portion of the internal electrode layer is At and the area of the metal portion is Am, the relationship of Am / At ≧ 0.8 is satisfied. A multilayer electronic component characterized by satisfying. 2. In X-ray diffraction of the main surface of the internal electrode layer, when the peak intensity of the crystal plane (200) is I (200) and the peak intensity of the crystal plane (111) is I (111),
The multilayer electronic component according to claim 1, wherein a relationship of (200) / I (111) ≧ 0.7 is satisfied. 3. The multilayer electronic component according to claim 1, wherein the internal electrode layer is formed using a rolled metal film.