JP2002182190A - Substrate with light shielding film and liquid crystal display - Google Patents

Substrate with light shielding film and liquid crystal display

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Publication number
JP2002182190A
JP2002182190A JP2000379261A JP2000379261A JP2002182190A JP 2002182190 A JP2002182190 A JP 2002182190A JP 2000379261 A JP2000379261 A JP 2000379261A JP 2000379261 A JP2000379261 A JP 2000379261A JP 2002182190 A JP2002182190 A JP 2002182190A
Authority
JP
Japan
Prior art keywords
substrate
light
shielding film
atomic
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000379261A
Other languages
Japanese (ja)
Inventor
Hitoshi Saiki
仁 斎木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP2000379261A priority Critical patent/JP2002182190A/en
Publication of JP2002182190A publication Critical patent/JP2002182190A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a substrate with a light shielding film hardly causing defects such as pattern deflects. SOLUTION: In the substrate on which a light shielding film having a multilayered structure is formed, the uppermost layer of the light shielding film farthest from the substrate contains 40 to 80 atm.% chromium, 10 to 40 atm.% oxygen and 10 to 50 atm.% nitrogen, and the second layer adjacent to the uppermost layer contains 70 atm.% to <100 atm.% chromium and nitrogen with lower concentration than in the uppermost layer or contains 70 to 100 atm.% chromium and no nitrogen.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、遮光膜付き基板に
関する。
The present invention relates to a substrate with a light-shielding film.

【0002】[0002]

【従来の技術】近年、液晶表示素子(LCD)のバック
ライトが高輝度化している。このため、LCDの基板上
に設けられたブラックマトリクスの液晶側の面の光反射
率が高いとバックライトの反射によりTFTが誤作動す
る等の不具合が生じるおそれがある。したがって、ブラ
ックマトリクスの液晶側の面にも低光反射性能が求めら
れている。
2. Description of the Related Art In recent years, the backlight of a liquid crystal display (LCD) has been increased in brightness. For this reason, when the light reflectance of the liquid crystal side surface of the black matrix provided on the LCD substrate is high, there is a possibility that a problem such as malfunction of the TFT due to reflection of the backlight may occur. Therefore, low light reflection performance is also required for the liquid crystal side surface of the black matrix.

【0003】このようなブラックマトリクスを形成する
遮光膜として、特開平2−144525には、基板上
に、金属の酸化膜、金属膜、金属酸化膜をこの順に積層
したものが開示されている。
As a light shielding film for forming such a black matrix, Japanese Patent Application Laid-Open No. 2-144525 discloses a light shielding film in which a metal oxide film, a metal film, and a metal oxide film are laminated in this order on a substrate.

【0004】[0004]

【発明が解決しようとする課題】しかし、このような3
層構造の遮光膜は、金属酸化膜のエッチング速度が金属
膜に比べて遅いため、フォトリソグラフィによるパター
ン形成後の断面形状が、基板から遠い側の金属酸化膜と
金属膜との間で逆テーパ状になる問題がある。この様子
を概念的に示したのが図1であり、基板1上に金属酸化
膜2、金属膜3、および金属酸化物膜4が形成されてお
り、金属酸化物膜4と金属膜3との間で逆テーパ部5が
生じている。このような遮光膜は、パターン形成後にパ
ターンのエッジ部分の凹凸が大きく、パターン欠け等の
欠陥が発生しやすい問題もある。
However, such a 3
The light-shielding film with a layered structure has a metal oxide film whose etching rate is slower than that of a metal film, so that the cross-sectional shape after pattern formation by photolithography has an inverse taper between the metal oxide film and the metal film far from the substrate. Problem. FIG. 1 conceptually shows this state. A metal oxide film 2, a metal film 3, and a metal oxide film 4 are formed on a substrate 1. A reverse tapered portion 5 is formed between the two. Such a light-shielding film has a problem in that the pattern has a large unevenness at the edge portion of the pattern after the pattern is formed, and a defect such as a chipped pattern is likely to occur.

【0005】本発明は、この問題を解決し、光反射率が
小さく、かつフォトリソグラフィによるパターン形成後
の断面形状が良好な、遮光膜付き基板を提供することを
目的とする。
It is an object of the present invention to provide a substrate with a light-shielding film which solves this problem and has a low light reflectance and a good cross-sectional shape after pattern formation by photolithography.

【0006】[0006]

【課題を解決するための手段】本発明は、基板上に多層
構造の遮光膜が形成されてなる遮光膜付き基板であっ
て、遮光膜の基板から最も離れた最上層は、40〜80
原子%のクロム、10〜40原子%の酸素及び10〜5
0原子%の窒素を含む層であり、最上層に接する第2層
は、70原子%以上100原子%未満のクロムと最上層
より濃度の低い窒素とを含む層であることを特徴とする
遮光膜付き基板を提供する。また、第2層は、最上層よ
り5原子%以上濃度の低い窒素とを含む層である上記の
遮光膜付き基板を提供する。
According to the present invention, there is provided a substrate provided with a light-shielding film having a multilayer light-shielding film formed on a substrate, wherein the uppermost layer of the light-shielding film furthest from the substrate is 40 to 80.
Atomic% chromium, 10-40 atomic% oxygen and 10-5
A second layer in contact with the uppermost layer, the second layer being in contact with the uppermost layer is a layer containing chromium of 70 to 100 atomic% and nitrogen having a lower concentration than the uppermost layer. A substrate with a film is provided. In addition, the second layer provides the substrate with a light-blocking film, wherein the second layer is a layer containing nitrogen having a concentration lower than that of the uppermost layer by 5 atomic% or more.

【0007】また、基板上に多層構造の遮光膜が形成さ
れてなる遮光膜付き基板であって、遮光膜の基板から最
も離れた最上層は、40〜80原子%のクロム、10〜
40原子%の酸素及び10〜50原子%の窒素を含む層
であり、最上層に接する第2層は、70〜100原子%
のクロムを含み、窒素を含まない層であることを特徴と
する遮光膜付き基板を提供する。
A light-shielding film provided with a light-shielding film having a multilayer structure formed on the substrate, wherein the uppermost layer of the light-shielding film farthest from the substrate is 40 to 80 atomic% of chromium, 10 to 80 atomic%.
A layer containing 40 atomic% of oxygen and 10 to 50 atomic% of nitrogen;
A substrate with a light-shielding film, characterized in that it is a layer containing chromium and no nitrogen.

【0008】また、最上層表面の視感光反射率が20%
以下である上記の遮光膜付き基板を提供する。また、上
記の遮光膜付き基板を観視者側の基板として用いた液晶
セルと、この液晶セルの観視者側と反対側の近傍に配置
された光源と、を備えることを特徴とする液晶表示装置
を提供する。
Further, the visible light reflectance of the uppermost layer surface is 20%.
The following substrate with a light-shielding film is provided. In addition, a liquid crystal comprising: a liquid crystal cell using the substrate with a light-shielding film as a substrate on the viewer side; and a light source disposed in the vicinity of the liquid crystal cell on the side opposite to the viewer side. A display device is provided.

【0009】[0009]

【発明の実施の形態】本発明における遮光膜付き基板の
遮光膜は、多層構造を有し、少なくとも基板から最も離
れた最上層と最上層に接する第2層とを含むが、それ以
外の層を第2層と基板との間に備えていてもよい。基板
から最も離れた最上層は、40〜80原子%のクロム、
10〜40原子%の酸素及び10〜50原子%の窒素を
含む層である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The light-shielding film of the substrate with a light-shielding film according to the present invention has a multilayer structure and includes at least an uppermost layer farthest from the substrate and a second layer in contact with the uppermost layer. May be provided between the second layer and the substrate. The top layer furthest from the substrate is 40-80 atomic% chromium,
The layer contains 10 to 40 atomic% of oxygen and 10 to 50 atomic% of nitrogen.

【0010】窒素は、エッチング速度を制御するための
必須成分であり、低光反射性能を向上する効果も持つ。
10原子%未満では、このような効果が得られにくい。
より好ましくは15原子%以上である。一方、50原子
%超では、遮光性が低下する傾向がある。より好ましく
は40原子%以下、特に好ましくは20原子%以下であ
る。
[0010] Nitrogen is an essential component for controlling the etching rate, and also has the effect of improving low light reflection performance.
If it is less than 10 atomic%, it is difficult to obtain such an effect.
It is more preferably at least 15 atomic%. On the other hand, if it exceeds 50 atomic%, the light-shielding properties tend to decrease. It is more preferably at most 40 at%, particularly preferably at most 20 at%.

【0011】酸素は低光反射性能を確保するために10
原子%以上必須であり、好ましくは20原子%以上含有
する。一方、40原子%超では、パターン形成後にパタ
ーンのエッジ部分の凹凸が大きくなり、パターン欠け等
の欠陥が発生する傾向がある。好ましくは30原子%以
下、より好ましくは25原子%以下である。また、必須
ではないが、20原子%以下の範囲で炭素を添加でき
る。最上層の表面の視感光反射率は20%以下(ガラス
の光反射率を除く)とすることが好ましい。この観点か
ら、厚さは10〜70nmにすることが効果的である。
Oxygen is used in an amount of 10 to ensure low light reflection performance.
At least atomic% is essential, and preferably at least 20 atomic%. On the other hand, if it exceeds 40 atomic%, the irregularities at the edges of the pattern after pattern formation become large, and defects such as chipping of the pattern tend to occur. It is preferably at most 30 at%, more preferably at most 25 at%. Although not essential, carbon can be added in a range of 20 atomic% or less. The visible light reflectance of the surface of the uppermost layer is preferably 20% or less (excluding the light reflectance of glass). From this viewpoint, it is effective to set the thickness to 10 to 70 nm.

【0012】最上層に接する第2層は、70原子%以上
100原子%未満のクロムと最上層より濃度の低い窒素
とを含む層であるか、または70〜100原子%のクロ
ムを含み、窒素を含まない層である。
The second layer in contact with the uppermost layer is a layer containing chromium of at least 70 atomic% and less than 100 atomic% and nitrogen having a lower concentration than the uppermost layer, or containing 70 to 100 atomic% of chromium, Is a layer that does not contain

【0013】クロムは遮光性を確保するために70原子
%以上必須である。また、第2層の遮光性低下を防ぐた
め、酸素は、含有するとしても7原子%以下とされる。
酸素は、実質的に、すなわち不純物として含まれる量を
除いて、含有されないことが好ましい。
[0013] Chromium is essential in an amount of 70 atomic% or more in order to secure light-shielding properties. Further, in order to prevent the light-shielding property of the second layer from lowering, the content of oxygen is set to 7 atom% or less, if any.
It is preferable that oxygen is not substantially contained, that is, except for the amount contained as an impurity.

【0014】窒素は、必須ではないが、含有していると
エッチング速度を制御するために効果的である。ただ
し、第2層は最上層より窒素の濃度が低くなくてはなら
ない。特に、逆テーパ状となることを充分に防止するた
めに、第2層は最上層より5原子%以上窒素の濃度が低
いことが好ましい。また、必須ではないが、10原子%
以下の範囲で炭素を添加できる。第2層の厚さは、可視
領域のOD(Optical Density:光学濃
度)値を4.0〜4.5とする観点からは、50〜15
0nmとすることが好ましい。
[0014] Nitrogen is not essential, but containing it is effective for controlling the etching rate. However, the second layer must have a lower nitrogen concentration than the uppermost layer. In particular, it is preferable that the concentration of nitrogen in the second layer is lower than that of the uppermost layer by 5 atomic% or more in order to sufficiently prevent the taper from being reversely tapered. Also, although not essential, 10 atomic%
Carbon can be added in the following ranges. The thickness of the second layer is from 50 to 15 from the viewpoint of setting the OD (Optical Density: optical density) value in the visible region to 4.0 to 4.5.
It is preferably set to 0 nm.

【0015】本発明における遮光膜は、第2層の基板側
に接する第3層を備えてもよい。第3層は、基板側から
見た光反射率を低減するために、以下のような組成が好
ましい。 クロム 30〜80原子%、 酸素+窒素 20〜70原子%。
The light-shielding film according to the present invention may include a third layer in contact with the second layer on the substrate side. The third layer preferably has the following composition in order to reduce the light reflectance as viewed from the substrate side. Chromium 30-80 atomic%, oxygen + nitrogen 20-70 atomic%.

【0016】低光反射性能を確保するために酸素および
窒素のうちのいずれかを含むことが好ましく、酸素およ
び窒素のそれぞれの濃度は、50原子%以下とすること
が好ましい。窒素はエッチング速度を制御するためにも
効果がある。また、炭素は、必須ではないが、20原子
%以下の範囲で添加できる。第3層の厚さは、基板側か
ら見た遮光膜の可視領域での光反射率を3%以下(ガラ
スの光反射率を除く)とする観点から、30〜70nm
にすることが効果的である。
In order to ensure low light reflection performance, it is preferable to contain either oxygen or nitrogen, and the concentration of each of oxygen and nitrogen is preferably 50 atomic% or less. Nitrogen is also effective in controlling the etching rate. Further, carbon is not essential, but can be added in a range of 20 atomic% or less. The thickness of the third layer is 30 to 70 nm from the viewpoint that the light reflectance in the visible region of the light-shielding film viewed from the substrate side is 3% or less (excluding the light reflectance of glass).
Is effective.

【0017】本発明における遮光膜の各層は、たとえ
ば、クロムを主成分とする適当な金属組成からなるター
ゲットを用いて、真空チャンバ内でDCスッパッタリン
グすることにより作製できる。
Each layer of the light-shielding film in the present invention can be produced, for example, by DC sputtering in a vacuum chamber using a target having an appropriate metal composition containing chromium as a main component.

【0018】第2層を形成する場合は雰囲気ガスは主に
Arガスを使用すればよく、また膜の引張り応力低減、
密着性向上、エッチング速度のコントロールの観点か
ら、ArガスにN2等のガスをたとえば40体積%以下
混合してもよい。最上層を形成する場合の雰囲気ガスと
しては、ArおよびN2に、O2またはCO2を混合した
ガス、N2にO2またはCO2を混合したガスなどを使用
し、これらの混合比を適正化し、投入電力を制御するこ
とにより、所望の組成の膜を形成できる。
When the second layer is formed, the atmosphere gas may be mainly Ar gas, and the tensile gas of the film can be reduced.
From the viewpoint of improving the adhesion and controlling the etching rate, a gas such as N 2 may be mixed with the Ar gas, for example, in an amount of 40% by volume or less. The atmosphere gas when forming the uppermost layer, the Ar and N 2, a mixed gas of O 2 or CO 2, such as by using a gas mixture of O 2 or CO 2 in N 2, these mixing ratios By optimizing and controlling the input power, a film having a desired composition can be formed.

【0019】本発明の遮光膜付き基板を液晶セルの観視
者側の基板として用い、この液晶セルの観視者側と反対
側の近傍に光源を配置して液晶表示装置を構成すれば、
この液晶表示装置は、光源によるTFTの誤動作を生じ
にくい長所を有する。
If the substrate with a light-shielding film of the present invention is used as a substrate on the viewer side of a liquid crystal cell, and a light source is arranged near the liquid crystal cell on the side opposite to the viewer side, a liquid crystal display device is constructed.
This liquid crystal display device has an advantage that a TFT does not easily malfunction due to a light source.

【0020】[0020]

【実施例】透明基板として、0.7mm厚の透明なガラ
ス基板(旭硝子社製無アルカリガラス「AN100」)
を使用し、ガラス基板の表面を洗剤で洗浄し、清浄なガ
ラス基板表面を得た後、インライン式DCスパッタリン
グ装置にて表1の組成、膜厚の遮光膜を成膜した。スパ
ッタリングパワーの調整により各層の膜厚を調整した。
各遮光膜の組成はESCA分析により測定した。組成の
残部は炭素である。例1、2、3は実施例、例4は比較
例である。表1の遮光膜はすべて、可視領域のOD値は
4.0以上であった。さらに各遮光膜を以下の方法で評
価した。結果を併せて表1に示す。
EXAMPLE As a transparent substrate, a transparent glass substrate having a thickness of 0.7 mm (alkali-free glass "AN100" manufactured by Asahi Glass Co., Ltd.)
After cleaning the surface of the glass substrate with a detergent to obtain a clean glass substrate surface, a light-shielding film having the composition and film thickness shown in Table 1 was formed using an in-line DC sputtering apparatus. The thickness of each layer was adjusted by adjusting the sputtering power.
The composition of each light-shielding film was measured by ESCA analysis. The balance of the composition is carbon. Examples 1, 2, and 3 are Examples, and Example 4 is a Comparative Example. All the light-shielding films in Table 1 had an OD value in the visible region of 4.0 or more. Further, each light shielding film was evaluated by the following method. The results are shown in Table 1.

【0021】(パターニング形状)通常のフォトリソグ
ラフィ工程を用いサンプル薄膜上にポジレジスト(FH
−2406:富士ハント社製)をスピンコータで遮光膜
上に塗布して、露光、現像、エッチングを実施し、遮光
膜をパターニングした。エッチング液は、エッチング速
度の評価と同様に、質量百分率基準で硝酸第二セリウム
アンモニウムを12%、過塩素酸を6%含む混液を使用
した。エッチング時間のみ適正化することにより、線幅
6μm程度のパターニングが可能であるものを○、パタ
ーニングが困難なもの×、それらの中間を△とした。
(Patterned Shape) A positive resist (FH) is formed on the sample thin film using a normal photolithography process.
-2406: manufactured by Fuji Hunt Co.) was applied onto the light-shielding film with a spin coater, and exposed, developed and etched to pattern the light-shielding film. As the etching solution, a mixed solution containing 12% of ceric ammonium nitrate and 6% of perchloric acid on a mass percentage basis was used in the same manner as in the evaluation of the etching rate. When the etching time was optimized, the patterning with a line width of about 6 μm was possible, the pattern was difficult, and the pattern was difficult.

【0022】(視感光反射率)最上層表面の視感光反射
率を分光測色計(ミノルタ社製CM2002)を用いて
測定した。 (最低光反射率)最上層表面の最低光反射率を分光測色
計(ミノルタ社製CM2002)を用いて測定した。
(Visible light reflectance) The visible light reflectance of the uppermost layer surface was measured using a spectrophotometer (CM2002 manufactured by Minolta). (Minimum light reflectance) The minimum light reflectance of the uppermost layer surface was measured using a spectrophotometer (CM2002 manufactured by Minolta).

【0023】[0023]

【表1】 [Table 1]

【0024】[0024]

【発明の効果】本発明の遮光膜付き基板は、遮光膜のパ
ターニング後に、断面形状が逆テーパ状になりにくく、
パターン欠け等の欠陥が発生しにくい。
According to the substrate with a light-shielding film of the present invention, the cross-sectional shape of the substrate with the light-shielding film is unlikely to be reversely tapered after the patterning of the light-shielding film.
Defects such as chipped patterns are unlikely to occur.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従来技術の不具合を説明する概念図FIG. 1 is a conceptual diagram illustrating a problem of the related art.

【符号の説明】[Explanation of symbols]

1:基板 2:金属酸化膜 3:金属膜 4:金属酸化膜 5:逆テーパ部 1: substrate 2: metal oxide film 3: metal film 4: metal oxide film 5: reverse taper

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】基板上に多層構造の遮光膜が形成されてな
る遮光膜付き基板であって、遮光膜の基板から最も離れ
た最上層は、40〜80原子%のクロム、10〜40原
子%の酸素及び10〜50原子%の窒素を含む層であ
り、最上層に接する第2層は、70原子%以上100原
子%未満のクロムと最上層より濃度の低い窒素とを含む
層であることを特徴とする遮光膜付き基板。
1. A light-shielding substrate having a light-shielding film having a multilayer structure formed on a substrate, wherein the uppermost layer of the light-shielding film farthest from the substrate is 40 to 80 atomic% of chromium and 10 to 40 atomic%. % Oxygen and 10 to 50 atomic% nitrogen, and the second layer which is in contact with the uppermost layer is a layer containing 70 to 100 atomic% chromium and nitrogen having a lower concentration than the uppermost layer. A substrate with a light-shielding film, characterized in that:
【請求項2】第2層は、最上層より5原子%以上濃度の
低い窒素とを含む層である請求項1記載の遮光膜付き基
板。
2. The substrate with a light-shielding film according to claim 1, wherein the second layer is a layer containing nitrogen having a concentration lower than that of the uppermost layer by 5 atomic% or more.
【請求項3】基板上に多層構造の遮光膜が形成されてな
る遮光膜付き基板であって、遮光膜の基板から最も離れ
た最上層は、40〜80原子%のクロム、10〜40原
子%の酸素及び10〜50原子%の窒素を含む層であ
り、最上層に接する第2層は、70〜100原子%のク
ロムを含み、窒素を含まない層であることを特徴とする
遮光膜付き基板。
3. A light-shielding substrate with a light-shielding film having a multilayer structure formed on a substrate, wherein the uppermost layer of the light-shielding film furthest from the substrate is 40 to 80 atomic% of chromium and 10 to 40 atomic%. A second layer in contact with the uppermost layer is a layer containing 70 to 100 atomic% of chromium and not containing nitrogen. With board.
【請求項4】最上層表面の視感光反射率が20%以下で
ある請求項1、2または3記載の遮光膜付き基板。
4. The substrate with a light-shielding film according to claim 1, wherein the visible light reflectance of the uppermost layer surface is 20% or less.
【請求項5】請求項1、2、3または4記載の遮光膜付
き基板を観視者側の基板として用いた液晶セルと、この
液晶セルの観視者側と反対側の近傍に配置された光源
と、を備えることを特徴とする液晶表示装置。
5. A liquid crystal cell using the substrate with a light-shielding film according to claim 1, 2, 3 or 4 as a substrate for a viewer, and a liquid crystal cell arranged near the viewer on the side opposite to the viewer. And a light source.
JP2000379261A 2000-12-13 2000-12-13 Substrate with light shielding film and liquid crystal display Pending JP2002182190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000379261A JP2002182190A (en) 2000-12-13 2000-12-13 Substrate with light shielding film and liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000379261A JP2002182190A (en) 2000-12-13 2000-12-13 Substrate with light shielding film and liquid crystal display

Publications (1)

Publication Number Publication Date
JP2002182190A true JP2002182190A (en) 2002-06-26

Family

ID=18847673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000379261A Pending JP2002182190A (en) 2000-12-13 2000-12-13 Substrate with light shielding film and liquid crystal display

Country Status (1)

Country Link
JP (1) JP2002182190A (en)

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